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Proceedings of SPIE Volume 8324

Metrology, Inspection, and Process Control for Microlithography XXVI
Editor(s): Alexander Starikov
Format Member Price Non-Member Price
Softcover $135.00 $180.00

Volume Details

Volume Number: 8324
Date Published: 30 April 2012
Softcover: 108 papers (1070) pages
ISBN: 9780819489807

Table of Contents
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Front Matter: Volume 8324
Author(s): Proceedings of SPIE
Can we get 3D-CD metrology right?
Author(s): András E. Vladár; Petr Cizmar; John S. Villarrubia; Michael T. Postek
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Inspection and metrology for through-silicon vias and 3D integration
Author(s): Andrew C. Rudack
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Hybrid metrology solution for 1X-node technology
Author(s): Alok Vaid; Alexander Elia; Mark Kelling; John Allgair; Carsten Hartig; Peter Ebersbach; Erin McLellan; Matthew Sendelbach; Nedal Saleh; Narender Rana; Hiroki Kawada; Toru Ikegami; Masahiko Ikeno; Takahiro Kawasaki; Cornel Bozdog; Helen Kim; Elad Arnon; Roy Koret; Igor Turovets
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Dose-focus monitor technique using CD-SEM and application to local variation analysis
Author(s): Shoji Hotta; Timothy Brunner; Scott Halle; Keiichiro Hitomi; Takeshi Kato; Atsuko Yamaguchi
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Potential new CD metrology metric combined with data fusion for future node production
Author(s): J. Foucher; J. Hazart; N. Griesbach Schuch Figueiro
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A comparison of alignment and overlay performance with varying hardmask materials
Author(s): Sangho Yun; Soon Mok Ha; Young Min Nam; Cheol-Hong Kim; Suk-Woo Nam
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High-order wafer alignment in manufacturing
Author(s): Michael Pike; Nelson Felix; Vinayan Menon; Christopher Ausschnitt; Timothy Wiltshire; Sheldon Meyers; Won Kim; Blandine Minghetti
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Overlay accuracy with respect to device scaling
Author(s): Philippe Leray; David Laidler; Shaunee Cheng
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New analytical algorithm for overlay accuracy
Author(s): Boo-Hyun Ham; Sangho Yun; Min-Cheol Kwak; Soon Mok Ha; Cheol-Hong Kim; Suk-Woo Nam
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ArFi lithogrphy optimization for thin OMOG reticle with fast aerial imaging
Author(s): Yaron Cohen; Jo Finders; Shmoolik Mangan; Ilan Englard; Orion Mouraille; Maurice Janssen; Junji Miyazaki; Brid Connolly; Yosuke Kojima; Masaru Higuchi
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Transistor architecture impact on wafer inspection
Author(s): Timothy F. Crimmins
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Ultrahigh 22-nm resolution EUV coherent diffraction imaging using a tabletop 13-nm high harmonic source
Author(s): Matthew D. Seaberg; Daniel E. Adams; Bosheng Zhang; Dennis F. Gardner; Margaret M. Murnane; Henry C. Kapteyn
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Patterned defect and CD metrology by TSOM beyond the 22-nm node
Author(s): Abraham Arceo; Benjamin Bunday; Victor Vartanian; Ravikiran Attota
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Scatterfield microscopy of 22-nm node patterned defects using visible and DUV light
Author(s): Bryan M. Barnes; Yeung-Joon Sohn; Francois Goasmat; Hui Zhou; Richard M. Silver; Abraham Arceo
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Roughness metrology of gate all around silicon nanowire devices
Author(s): Shimon Levi; Ishai Schwarzband; Roman Kris; Ofer Adan; Guy M. Cohen; Sarunya Bangsaruntip; Lynne Gignac
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Sensitivity analysis of line-edge roughness measured by means of scatterometry: a simulation-based investigation
Author(s): Bartosz Bilski; Karsten Frenner; Wolfgang Osten
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Noise effects on contact-edge roughness and CD uniformity measurement
Author(s): V. Constantoudis; V.-K. Murugesan Kuppuswamy; E. Gogolides
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Investigation of the performance of state-of-the-art defect inspection tools within EUV lithography
Author(s): Dieter Van den Heuvel; Rik Jonckheere; Bart Baudemprez; Shaunee Cheng; Gino Marcuccilli; Andrew Cross; Gregg Inderhees; Paolo Parisi
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Scatterometry metrology challenges of EUV
Author(s): Prasad Dasari; Jie Li; Jiangtao Hu; Zhuan Liu; Oleg Kritsun; Catherine Volkman
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Phase sensitive parametric optical metrology: exploring the limits of three-dimensional optical metrology
Author(s): Richard M. Silver; Jing Qin; Bryan M. Barnes; Hui Zhou; Ronald Dixson; Francois Goasmat
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Investigation of E-beam patterned nanostructures using Mueller Matrix based Scatterometry
Author(s): Gangadhara Raja Muthinti; Brennan Peterson; Alain C. Diebold
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Accurate optical CD profiler based on specialized finite element method
Author(s): Jesus Carrero; Gökhan Perçin
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Coherent Fourier scatterometry: tool for improved sensitivity in semiconductor metrology
Author(s): N. Kumar; O. El Gawhary; S. Roy; V. G Kutchoukov; S. F. Pereira; W. Coene; H. P. Urbach
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Challenges of SEM metrology at sub-10nm linewidth
Author(s): Sergey Babin; Sergey Borisov; Christophe Peroz; Peter Yushmanov
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Contour metrology using critical dimension atomic force microscopy
Author(s): Ndubuisi G. Orji; Ronald G. Dixson; András E. Vladár; Bin Ming; Michael T. Postek
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On CD-AFM bias related to probe bending
Author(s): V. A. Ukraintsev; N. G. Orji; T. V. Vorburger; R. G. Dixson; J. Fu; R. M. Silver
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Sub-nanometer calibration of line width measurement and line edge detection by using STEM and sectional SEM
Author(s): Kiyoshi Takamasu; Haruki Okitou; Satoru Takahashi; Mitsuru Konno; Osamu Inoue; Hiroki Kawada
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Profile variation impact on FIB cross-section metrology
Author(s): Aaron Cordes; Benjamin Bunday; Jim Nadeau
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Automated S/TEM metrology on advanced semiconductor gate structures
Author(s): M. Strauss; J. Arjavac; D. N. Horspool; K. Nakahara; C. Deeb; C. Hobbs
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Compensation of CD-SEM image-distortion detected by View-Shift Method
Author(s): Osamu Inoue; Takahiro Kawasaki; Hiroki Kawada
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In-line metrology of 3D interconnect processes
Author(s): Y. S. Ku; D. M. Shyu; P. Y. Chang; W. T. Hsu
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Measuring thermally induced void growth in conformally filled through-silicon vias (TSVs) by laboratory x-ray microscopy
Author(s): L. W. Kong; J. R. Lloyd; M. Liehr; A. C. Rudack; S. Arkalgud; A. C. Diebold
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Through-silicon via plating void metrology using focused ion beam mill
Author(s): A. C. Rudack; J. Nadeau; R. Routh; R. J. Young
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Measurement of through silicon via etch profile by dark-field optical microscope
Author(s): Deh-Ming Shyu; Yi-sha Ku
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Wafer level warpage characterization of 3D interconnect processing wafers
Author(s): Po-Yi Chang; Yi-Sha Ku
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Overlay accuracy fundamentals
Author(s): Daniel Kandel; Vladimir Levinski; Noam Sapiens; Guy Cohen; Eran Amit; Dana Klein; Irina Vakshtein
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Size matters in overlay measurement
Author(s): Nigel P. Smith; Brennan L. Peterson; Gary R. Goelzer
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Feasibility study of matched machine overlay enhancement toward next-generation device development
Author(s): Jeongjin Lee; Seungyoon Lee; Chan Hwang
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Evaluation of a novel ultra small target technology supporting on-product overlay measurements
Author(s): Henk-Jan H. Smilde; Arie den Boef; Michael Kubis; Martin Jak; Mark van Schijndel; Andreas Fuchs; Maurits van der Schaar; Steffen Meyer; Stephen Morgan; Jon Wu; Vincent Tsai; Cathy Wang; Kaustuve Bhattacharyya; Kai-Hsiung Chen; Guo-Tsai Huang; Chih-Ming Ke; Jacky Huang
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Application of DBM system to overlay verification and wiggling quantification for advanced process
Author(s): Taehyeong Lee; Jungchan Kim; Gyun Yoo; Chanha Park; Hyunjo Yang; Donggyu Yim; Byoungjun Park; Kotaro Maruyama; Masahiro Yamamoto
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Quality indicators of image-based overlay
Author(s): Yen-Liang Chen; Jacky Huang; Rita Lee; Chen-Ming Wang; Chih-Ming Ke; Tsai-Sheng Gau
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Scanning-electron-microscope image processing for accurate analysis of line-edge and line-width roughness
Author(s): Atsushi Hiraiwa; Akio Nishida
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Static and dynamic photoresist shrinkage effects in EUV photoresists
Author(s): Benjamin Bunday; Cecilia Montgomery; Warren Montgomery; Aaron Cordes
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SEM metrology on bit patterned media nanoimprint template: issues and improvements
Author(s): Justin J. Hwu; Sergey Babin; Peter Yushmanov
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Methodology for establishing CD-SEM robust metrology algorithm for development cycles applications
Author(s): Keiichiro Hitomi; Erin Lavigne; Shoji Hotta; Yoshinori Momonoi; Matthew Colburn; Atsuko Yamaguchi; Katsuhiro Sasada; Tatsuya Maeda
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Data feed-forward for improved optical CD and film metrology
Author(s): L. Mihardja; M. Di; Q. Zhao; Z. Tan; J. C. Robinson; H. Chouaib
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Faster diffraction-based overlay measurements with smaller targets using 3D gratings
Author(s): Jie Li; Oleg Kritsun; Yongdong Liu; Prasad Dasari; Catherine Volkman; Jiangtao Hu
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Novel prediction methodology for etched hole patterning failure
Author(s): Seiro Miyoshi; Hideaki Abe; Kazuhiro Takahata; Tomoko Ojima; Masanari Kajiwara; Shoji Mimotogi; Kohji Hashimoto
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Direct-scatterometry-enabled lithography model calibration
Author(s): Chih-Yu Chen; Kuen-Yu Tsai; Yu-Tian Shen; Yen-Min Lee; Jia-Han Li; Jason J. Shieh; Alek C. Chen
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Bridging CD metrology gaps of advanced patterning with assistance of nanomolding
Author(s): Narender Rana; Dario Goldfarb
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Scanning electron microscopy imaging of ultra-high aspect ratio hole features
Author(s): Aron J. Cepler; Benjamin Bunday; Bradley L Thiel; John S. Villarrubia
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Impacts of overlay correction model and metrology sampling scheme on device yield
Author(s): Chui-Fu Chiu; Chun-Yen Huang; Jason Shieh; Tsann-Bim Chiou; Albert Li; Chiang-Lin Shih; Alek Chen
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Characterization of ultrathin films by laser-induced sub-picosecond photoacoustics with coherent extreme ultraviolet detection
Author(s): Qing Li; Kathleen Hoogeboom-Pot; Damiano Nardi; Chris Deeb; Sean King; Marie Tripp; Erik Anderson; Margaret M. Murnane; Henry C. Kapteyn
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Defect distribution study at through silicon via (TSV) bottom by scanning white-light interference microscopy
Author(s): Jeongho Ahn; Jaeyoung Park; Dongchul Ihm; Byoungho Lee; Soobok Chin; Ho-Kyu Kang; Jiyoung Noh; Peter Ko; Timothy A. Johnson; Namki Suk
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A scatterometry-based CD uniformity control solution for Spacer Patterning Technology
Author(s): Jongsu Lee; Chang Moon Lim; Chan-Ho Ryu; Myoungsoo Kim; Hyosang Kang; Hugo Cramer; Noelle Wright; Birgitt Hepp; Liesbeth van Reijnen; Hans van der Laan; Maryana Escalante Marun; Peter ten Berge
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Automated SEM recipe generation for OPC applications
Author(s): Sylvain Berthiaume; Travis Brist; Peter Brooker; William Stanton; Brian Ward; Shimon Levi; Amit Siany
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Small particle defect characterization on critical layers of 22nm Spacer Self-Aligned Double Patterning (SADP)
Author(s): Gurminder Singh; Kfir Dotan; Saar Shabtay; Man-Ping Cai; Noam Shachar; Chris Ngai; Chris Bencher; Liyan Miao; Yongmei Chen
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Integration and automation of DoseMapper in a logic fab APC system: application for 45/40/28nm node
Author(s): Bertrand Le Gratiet; Christophe Salagnon; Jean de Caunes; Marc Mikolajczak; Vincent Morin; Nicolas Chojnowski; Frank Sundermann; Jean Massin; Alice Pelletier; Joel Metz; Yoann Blancquaert; Regis Bouyssou; Arthur Pelissier; Olivier Belmont; Anne Strapazzon; Anna Phillips; Thierry Devoivre; Emilie Bernard; Estelle Batail; Lionel Thevenon; Benedicte Bry; Fabrice Bernard-Granger; Ahmed Oumina; Marie-Pierre Baron; Didier Gueze
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Recess gate process control by using 3D SCD in 3xm vertical DRAM
Author(s): Ming-Feng Kuo; Sheng-Hung Wu; Tien-Hung Lan; Shuang Hsun Chang; Elvis Wang; Houssam Chouaib; Harvey Cheng; Qiang Zhao
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Apply multiple target for advanced gate ADI critical dimension measurement by scatterometry technology
Author(s): Wei-Jhe Tzai; Howard Chen; Yu-Hao Huang; Chun-Chi Yu; Ching-Hung Bert Lin; Shi-Ming Jeremy Wei; Zhi-Qing James Xu; Sungchul Yoo; Chien-Jen Eros Huang; Chao-Yu Harvey Cheng; Juli Cheng; Lanny Mihardja; Houssam Chouaib
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Fast and accurate scatterometry metrology method for STI CMP step height process evaluation
Author(s): Chih-Hsun Lin; Climbing Huang; Chia-Lin Hsu; Wu-Sian Sie; J. Y. Wu; Ching-Hung Bert Lin; Zhi-Qing James Xu; Qiong-Yan Yuan; Sungchul Yoo; Chien-Jen Eros Huang; Chao-Yu Harvey Cheng; Juli Cheng; Zhiming Jiang; Houssam Chouaib
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Diffraction-based overlay measurement on dedicated mark using rigorous modeling method
Author(s): Hailiang Lu; Fan Wang; Qingyun Zhang; Yonghui Chen; Chang Zhou
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Contamination control: removing small particles from increasingly large wafers
Author(s): A. J. de Jong; J. C. J. van der Donck; T. Huijser; O. Kievit; R. Koops; N. B. Koster; F. T. Molkenboer; A. M. M. G. Theulings
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Overlay quality metric
Author(s): Guy Cohen; Eran Amit; Dana Klein; Daniel Kandel; Vladimir B. Levinski
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Weighted least squares regression for advanced overlay control
Author(s): Dana Klein; John C. Robinson; Guy Cohen; Chin-Chou Kevin Huang; Bill Pierson
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Toward faster and better litho control in high-volume manufacturing
Author(s): Chui-Fu Chiu; Chun-Yen Huang; Wen-Bin Wu; Chiang-Lin Shih; Healthy Huang; James Manka; DongSub Choi; Arthur Lin; David Tien
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Overlay control methodology comparison: field-by-field and high-order methods
Author(s): Chun-Yen Huang; Chui-Fu Chiu; Wen-Bin Wu; Chiang-Lin Shih; Chin-Chou Kevin Huang; Healthy Huang; DongSub Choi; Bill Pierson; John C. Robinson
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CD-SEM and e-beam defect inspection of high-aspect ratio contact holes: measurement and simulation of precharge
Author(s): S. Babin; S Borisov; G. Kwon; C. H. Lee; J. H. Oh; D. Y. Mun; H. W. Yoo
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Accelerating litho technology development for advanced design node flash memory FEOL by next-generation wafer inspection and SEM review platforms
Author(s): Byoung Ho Lee; Jeongho Ahn; Dongchul Ihm; Soobok Chin; Dong-Ryul Lee; Seongchae Choi; Junbum Lee; Ho-Kyu Kang; Gangadharan Sivaraman; Tetsuya Yamamoto; Rahul Lakhawat; Ravikumar Sanapala; Chang Ho Lee; Arun Lobo
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Multi-level overlay techniques for improving DPL overlay control
Author(s): Charlie Chen; Y. C. Pai; Dennis Yu; Peter Pang; Chun Chi Yu; Robert (Hsing-Chien) Wu; Eros (Chien Jen) Huang; Marson (Chiun-Chieh) Chen; David Tien; Dongsub Choi
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The root cause of ArF resist CD shrinkage induced by defect inspection
Author(s): Tung-Chang Kuo
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The study of high-sensitive and accurate metrology method by using CD-SEM
Author(s): K. Ueda; S. Koshihara; T. Mizuno
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Nanoemitter: ultra-high-resolution electron source for CD metrology
Author(s): Sebastian W. Schmidt; Christian Penzkofer; Bernd Irmer
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Carbon contamination removal in larger chambers with low-power downstream plasma cleaning
Author(s): C. G. Morgan; R. Vane
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Evaluation of roughness transfer from Litho to Etch using CD-SEM
Author(s): M. Tanaka; T. Ishimoto; H. Kazumi; S. Cheng
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Line-end gap measurement with YieldStar scatterometer: towards an OPC model calibration
Author(s): A.-L. Charley; M. Dusa; T.-B. Chiou; P. Leray; S. Cheng; A. Fumar-Pici
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E-beam inspection system for comparison of wafer and design data
Author(s): Oliver D. Patterson; Julie Lee; Michael D. Monkowski; Deborah A Ryan; Shih-tsung Chen; Shuen Cheng Lei; Fei Wang; Chung Han Lee; Derek Tomlinson; Wei Fang; Jack Jau
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Electron-beam proximity effect model calibration for fabricating scatterometry calibration samples
Author(s): Yu-Tian Shen; Chun-Hung Liu; Chih-Yu Chen; Hoi-Tou Ng; Kuen-Yu Tsai; Fu-Ming Wang; Chieh-Hsiung Kuan; Yen-Min Lee; Hsin-Hung Cheng; Jia-Han Li; Alek C. Chen
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How to minimize CD variation and overlay degradation induced by film stress
Author(s): Woo-Yung Jung; Yong-Hyun Lim; Shin-Ae Park; Sang-Joon Ahn; Ji-Hyun Lee; Jung-A Yoo; Seung-Ho Pyi; Jin-Woong Kim
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Improving the measurement performance of angle-resolved scattermetry by use of pupil optimization
Author(s): Fan Wang; Qingyun Zhang; Hailiang Lu; Lifeng Duan; Xiaoping Li
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In-situ critical dimension control during post-exposure bake with spectroscopic ellipsometry
Author(s): Yit Sung Ngo; Yifan Qu; Arthur Tay; Tong Heng Lee
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Application of review-SEM to high-resolution inspection for 3xnm nodes
Author(s): J. H. Oh; G. Kwon; D. Y. Mun; H. W. Yoo; Y. S. Choi; T. H. Kim; F. Fukunaga; S. Umehara; M. Nozoe
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A non-uniform SEM contour sampling technique for OPC model calibration
Author(s): T. Shibahara; M. Oikawa; H. Shindo; H. Sugahara; Y. Hojyo
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Advanced full-automatic inspection of copper interconnects
Author(s): S. Takada; N. Ban; T. Ishimoto; N. Suzuki; S. Umehara; L. Carbonell; N. Heylen; R. Caluwaerts; H. Volders; K. Kellens; Z. Tokei
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Classification and recognition of diffraction structures using support vector machine in optical scatterometry
Author(s): Jinlong Zhu; Shiyuan Liu; Chuanwei Zhang; Xiuguo Chen; Zhengqiong Dong
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A study of optical penetration into the micro-periodic structure of semiconductor devices
Author(s): Harutaka Sekiya; Mitsuhiro Togashi; Mitsunori Numata; Yasutsugu Usami; Suejin Cho; Yongdeok Jeong; Yusin Yang
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Mechanism of photoresist shrinkage investigated by single-line scan of electron beam
Author(s): Takeyoshi Ohashi; Hiroaki Oizumi; Junichi Tanaka; Hiroki Kawada
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Optimization of blended virtual and actual metrology schemes
Author(s): Jae Yeon Claire Baek; Costas J. Spanos
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Reticle intensity-based critical dimension uniformity to improve efficiency for DOMA correction in a foundry
Author(s): Kin Wai Tang; Teng Hwee Ng; Lei Huang; Susan Ng; Thomas Ku; Wee Teck Chia; Lin Chua; William Li; Aaron Chin; Aditya Dayal; Tom Vavul; Trent Hutchinson
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Experiment analysis of absolute flatness testing
Author(s): Xin Jia; Tingwen Xing; Wumei Lin; Zhijie Liao
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Lithography process control using in-line metrology
Author(s): Nicolas Spaziani; René-Louis Inglebert; Jean Massin
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Investigations into an electrostatic chuck design for 450mm Si wafer
Author(s): Gerhard Kalkowski; Thomas Peschel; Geoffrey Hassall; Helder Alves; Stefan Risse
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Real-time scanning detection system of defects on a photomask by using the light scattering and interference method
Author(s): Sangon Lee; Byung heon Han; Jae Heung Jo; Hae Sung Wee; Jong Soo Kim
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Overlay target design and evaluation for SADP process
Author(s): C. W. Yeh; Chao-Tien Healthy Huang; Kengchi Lin; C. H. Huang; Elvis Yang; T. H. Yang; K. C. Chen; Chih-Yuan Lu
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Overcoming silicon limitations: new 3D-AFM carbon tips with constantly high-resolution for sub-28nm node semiconductor requirements
Author(s): Johann Foucher; Sebastian W. Schmidt; Christian Penzkofer; Bernd Irmer
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Surface scanning inspection system particle detection dependence on aluminum film morphology
Author(s): Walter Prater; Natalie Tran; Steve McGarvey
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Residual layer thickness control and metrology in jet and flash imprint lithography
Author(s): Shrawan Singhal; Ravikiran Attota; S. V. Sreenivasan
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Nanoparticle size and shape evaluation using the TSOM method
Author(s): Bradley Damazo; Ravikiran Attota; Purushotham Kavuri; András E. Vladár
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High-throughput and non-destructive sidewall roughness measurement using 3-dimensional atomic force microscopy
Author(s): Yueming Hua; Cynthia Buenviaje-Coggins; Yong-ha Lee; Sang-il Park
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Photoresist qualification using scatterometry CD
Author(s): Roie Volkovich; Yosef Avrahamov; Guy Cohen; Patricia Fallon; Wenyan Yin
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Technology review for silicon imagers-based see-through-silicon inspection and metrology
Author(s): Wei Zhou; Max Guest; Darcy Hart
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Improving lithography throughput and minimizing waste using predictive multi-area scheduling
Author(s): Madhav Kidambi; Shekar Krishnaswamy; Steve Marteney; James Moyne; David Norman; Jeremy Webb
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Evaluating diffraction-based overlay
Author(s): Jie Li; Asher Tan; JinWoo Jung; Gary Goelzer; Nigel Smith; Jiangtao Hu; Boo-Hyun Ham; Min-Cheol Kwak; Cheol-Hong Kim; Suk-Woo Nam
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High-speed, full 3D feature metrology for litho monitoring, matching, and model calibration with scatterometry
Author(s): Hugo Cramer; Alek Chen; Fahong Li; Philippe Leray; Anne-Laure Charley; Lieve van Look; Joost Bekaert; Shaunee Cheng
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Apply low-temperature plasma in the rework procedure of Al film structure to prevent pattern collapsed and CuAl[sub]2[/sub] precipitation
Author(s): Jau Yu Tsai; Kung Hsun Tsao; Tsz Yuan Chen; Chih Chung Huang; Huan Hsin Yeh; Yu Huan Liu
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Automated Heuristic Defect Classification (AHDC) for haze-induced defect growth management and mask requalification
Author(s): Saghir Munir; Gul Qidwai
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Multiple column high-throughput e-beam inspection (EBI)
Author(s): David K. Lam; Kevin M. Monahan; Enden D. Liu; Cong Tran; Ted Prescop
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High-speed atomic force microscopy and peak force tapping control
Author(s): Shuiqing Hu; Lars Mininni; Yan Hu; Natalia Erina; Johannes Kindt; Chanmin Su
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