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Proceedings of SPIE Volume 7972

Advances in Resist Materials and Processing Technology XXVIII
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Volume Details

Volume Number: 7972
Date Published: 18 April 2011
Softcover: 93 papers (870) pages
ISBN: 9780819485311

Table of Contents
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Front Matter: Volume 7972
Author(s): Proceedings of SPIE
Critical challenges for EUV resist materials
Author(s): Patrick P. Naulleau; Christopher N. Anderson; Lorie-Mae Baclea-an; Paul Denham; Simi George; Kenneth A. Goldberg; Gideon Jones; Brittany McClinton; Ryan Miyakawa; Seno Rekawa; Nate Smith
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Materials challenges for sub-20nm lithography
Author(s): James W. Thackeray
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Solvent development processing of chemically amplified resists: chemistry, physics, and polymer science considerations
Author(s): Christopher K. Ober; Christine Ouyang; Jin-Kyun Lee; Marie Krysak
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Fundamental investigation of negative tone development (NTD) for the 22nm node (and beyond)
Author(s): Guillaume Landie; Yongan Xu; Sean Burns; Kenji Yoshimoto; Martin Burkhardt; Larry Zhuang; Karen Petrillo; Jason Meiring; Dario Goldfarb; Martin Glodde; Anthony Scaduto; Matthew Colburn; Jason Desisto; Young Bae; Michael Reilly; Cecily Andes; Vaishali Vohra
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Developer effect on the negative tone development process under low NILS conditions
Author(s): Young C. Bae; Seung-Hyun Lee; Rosemary Bell; Lori Joesten; George G. Barclay
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Assessment of resist outgassing related EUV optics contamination for CAR and non-CAR material chemistries
Author(s): I. Pollentier; I. Neira; R. Gronheid
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Performance of EUV molecular resists based on fullerene derivatives
Author(s): Hiroaki Oizumi; Kentaro Matsunaga; Koji Kaneyama; Julius Joseph Santillan; Gousuke Shiraishi; Toshiro Itani
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Characterizing polymer bound PAG-type EUV resist
Author(s): Hiroshi Tamaoki; Shinji Tarutani; Hideaki Tsubaki; Toshiya Takahashi; Naoki Inoue; Tooru Tsuchihashi; Hiroo Takizawa; Hidenori Takahashi
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Novel approaches to implement the self-aligned spacer double-patterning process toward 11-nm node and beyond
Author(s): Hidetami Yaegashi; Kenichi Oyama; Kazuo Yabe; Shohei Yamauchi; Arisa Hara; Sakurako Natori
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The resist-core spacer patterning process for fabrication of 2xnm node semiconductor devices
Author(s): Koutarou Sho; Tomoya Oori; Kazunori Iida; Katsutoshi Kobayashi; Keisuke Kikutani; Katsumi Yamamoto; Fumiki Aiso; Kentaro Matsunaga; Eishi Shiobara; Koji Hashimoto
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A novel double patterning approach for 30nm dense holes
Author(s): Dennis Shu-Hao Hsu; Walter Wang; Wei-Hsien Hsieh; Chun-Yen Huang; Wen-Bin Wu; Chiang-Lin Shih; Steven Shih
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Resist freezing process challenges of cross pattern applications
Author(s): Zishu Zhang; Kaveri Jain; Scott L. Light; Anton J. deVilliers
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Photobase generator enabled pitch division: a progress report
Author(s): Xinyu Gu; Younjin Cho; Takanori Kawakami; Yuji Hagiwara; Brandon Rawlings; Ryan Mesch; Toshiyuki Ogata; Taeho Kim; Takehiro Seshimo; Wade Wang; Arun K. Sundaresan; Nicholas J. Turro; Roel Gronheid; James Blackwell; Robert Bristol; C. Grant Willson
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Optimization of pitch-split double patterning photoresist for applications at the 16nm node
Author(s): Steven J. Holmes; Cherry Tang; Sean Burns; Yunpeng Yin; Rex Chen; Chiew-seng Koay; Sumanth Kini; Hideyuki Tomizawa; Shyng-Tsong Chen; Nicolette Fender; Brian Osborn; Lovejeet Singh; Karen Petrillo; Guillaume Landie; Scott Halle; Sen Liu; John C. Arnold; Terry Spooner; Rao Varanasi; Mark Slezak; Matthew Colburn
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In situ dissolution analysis of EUV resists
Author(s): Toshiro Itani; Julius Joseph Santillan
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Visualization of the develop process
Author(s): Linda K. Sundberg; Gregory M. Wallraff; Alexander M. Friz; Blake W. Davis; Sally A. Swanson; Phillip J. Brock; Charles T. Rettner; William D. Hinsberg
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Revisit pattern collapse for 14nm node and beyond
Author(s): Kenji Yoshimoto; Craig Higgins; Ananthan Raghunathan; John G. Hartley; Dario L. Goldfarb; Hirokazu Kato; Karen Petrillo; Matthew E. Colburn; Jeffrey Schefske; Obert Wood; Thomas I. Wallow
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Characteristics of main chain decomposable STAR polymer for EUV resist
Author(s): Jun Iwashita; Taku Hirayama; Isamu Takagi; Kensuke Matsuzawa; Kenta Suzuki; Sachiko Yoshizawa; Kenri Konno; Masahito Yahagi; Kazufumi Sato; Seiichi Tagawa; Kazuyuki Enomoto; Akihiro Oshima
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Negative-tone imaging (NTI) at the 22nm node: process and material development
Author(s): Jason Cantone; Karen Petrillo; Yongan Xu; Guillaume Landie; Shinichiro Kawakami; Shannon Dunn; Matt Colburn
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High volume manufacturing capability of negative tone development process
Author(s): Shinji Tarutani; Sou Kamimura; Kana Fujii; Keita Katou; Yuuichirou Enomoto
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Patterning conventional photoresists in environmentally friendly silicone fluids
Author(s): Christine Y. Ouyang; Jin-Kyun Lee; Marie Krysak; Christopher K. Ober
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Patterning process study for 30nm hole
Author(s): Kilyoung Lee; Cheolkyu Bok; Jaeheon Kim; Byounghoon Lee; Jongsik Bang; Hyunkyung Shim; Sungjin Kim; James Moon; Donggyu Yim; Sung-Ki Park
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BARC surface property matching for negative-tone development of a conventional positive-tone photoresist
Author(s): Douglas J. Guerrero; Vandana Krishnamurthy; Daniel M. Sullivan
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Designing materials for advanced microelectronic patterning applications using controlled polymerization RAFT technology
Author(s): Michael T. Sheehan; William B. Farnham; Charles R. Chambers; Hoang V. Tran; Hiroshi Okazaki; Yefim Brun; Matthew L. Romberger; James R. Sounik
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Analysis of resist patterns for material and process design: parameter extraction from dose pitch matrices of line-width and edge roughness and cross-sectional SEM images
Author(s): Takahiro Kozawa; Hiroaki Oizumi; Toshiro Itani; Seiichi Tagawa
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Stochastic acid-based quenching in chemically amplified photoresists: a simulation study
Author(s): Chris A. Mack; John J. Biafore; Mark D. Smith
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Negative tone development: gaining insight through physical simulation
Author(s): Stewart A. Robertson; Michael Reilly; John J. Biafore; Mark D. Smith; Young Bae
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Meso-scale simulation of the line-edge structure based on resist polymer molecules by negative-tone process
Author(s): Hiroshi Morita
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Physical modeling of developable BARC at KrF
Author(s): Michael Reilly; John Biafore; James F. Cameron; Stewart A. Robertson
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Extendibility of EUV resists in the exposure wavelength from 13.5 down to 3.1 nm for next-generation lithography
Author(s): Tomoko G. Oyama; Tomohiro Takahashi; Akihiro Oshima; Masakazu Washio; Seiichi Tagawa
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Coefficient of thermal expansion (CTE) in EUV lithography: LER and adhesion improvement
Author(s): Craig Higgins; Charles Settens; Patricia Wolfe; Karen Petrillo; Robert Auger; Richard Matyi; Robert Brainard
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EUV underlayer materials for 22nm HP and beyond
Author(s): Huirong Yao; Zachary Bogusz; Jianhui Shan; Joonyeon Cho; Salem Mullen; Guanyang Lin; Mark Neisser
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Impact of post-litho LWR smoothing processes on the post-etch patterning result
Author(s): Philippe Foubert; Alessandro Vaglio Pret; Efrain Altamirano Sanchez; Roel Gronheid
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Developable BARC (DBARC) technology as a solution to today's implant lithography challenges
Author(s): James Cameron; Jin Wuk Sung; Sabrina Wong; Adam Ware; Yoshihiro Yamamoto; Hiroaki Kitaguchi; Libor Vyklicky; Steve Holmes; Irene Popova; Ranee Kwong; Pushkara Rao Varanasi
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193nm resist chemical modification induced by HBr cure plasma treatment: a TD-GC/MS outgassing study
Author(s): Raluca Tiron; Erwine Pargon; Laurent Azarnouche; Herve Fontaine; Sylviane Cetre; Claire Sourd
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Systematic studies on reactive ion etch-induced deformations of organic underlayers
Author(s): Martin Glodde; Sebastian Engelmann; Michael Guillorn; Sivananda Kanakasabapathy; Erin Mclellan; Chiew-Seng Koay; Yunpeng Yin; Muthumanickam Sankarapandian; John C. Arnold; Karen Petrillo; Markus Brink; Hiroyuki Miyazoe; E. Anuja de Silva; Hakeem Yusuff; Kwang-sub Yoon; Yayi Wei; Chung-hsi J. Wu; P. Rao Varanasi
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Hexafluoroalcohol (HFA) containing molecular resist materials for high-resolution lithographic applications
Author(s): Anuja De Silva; Linda K. Sundberg; Ratnam Sooriyakumaran; Luisa Bozano; Greg Breyta; William D. Hinsberg; Masaki Fujiwara
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Bound PAG resists: an EUV and electron beam lithography performance comparison of fluoropolymers
Author(s): Luisa D. Bozano; Phillip J. Brock; Hoa D. Truong; Martha I. Sanchez; Gregory M. Wallraff; William D. Hinsberg; Robert D. Allen; Masaki Fujiwara; Kazuhiko Maeda
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Addressing challenges in lithography using sub-millisecond post exposure bake of chemically amplified resists
Author(s): Byungki Jung; Christopher K. Ober; Michael O. Thompson; Todd R. Younkin; Manish Chandhok
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Extending photo-patternable low-κ concept to 193nm lithography and e-beam lithography
Author(s): Qinghuang Lin; A. Nelson; L. Bozano; P. Brock; S. Cohen; B. Davis; R. Kwong; E. Liniger; D. Neumayer; J. S. Rathore; H. Shobha; R. Sooriyakumaran; S. Purushothaman; R. Miller; R. Allen; T. Spooner; R. Wisnieff
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Process capability of implementing ArF negative resist into production
Author(s): Meng-Feng Tsai; Yang-Liang Li; Chan-Tsun Wu; Yi-Shiang Chang; Chia-Chi Lin
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Development of an inorganic nanoparticle photoresist for EUV, e-beam, and 193nm lithography
Author(s): Marie Krysak; Markos Trikeriotis; Evan Schwartz; Neal Lafferty; Peng Xie; Bruce Smith; Paul Zimmerman; Warren Montgomery; Emmanuel Giannelis; Christopher K. Ober
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EUV negative-resist based on thiol-yne system
Author(s): Masamitsu Shirai; Koichi Maki; Haruyuki Okamura; Koji Kaneyama; Toshiro Itani
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High-sensitivity EUV resists based on fluorinated polymers
Author(s): Tsuneo Yamashita; Masamichi Morita; Yoshito Tanaka; Julius Joseph Santillan; Toshiro Itani
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Characterization of EUV irradiation effects on polystyrene derivatives studied by x-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS)
Author(s): Hiroki Yamamoto; Takahiro Kozawa; Seiichi Tagawa
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Ultra-thin-film EUV resists beyond 20nm lithography
Author(s): Hiroki Nakagawa; Tomohisa Fujisawa; Kentaro Goto; Tooru Kimura; Toshiyuki Kai; Yoshi Hishiro
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Fundamental study on reaction mechanisms in chemically amplified extreme ultraviolet resists by using 61nm free-electron laser
Author(s): Kazumasa Okamoto; Takahiro Kozawa; Takaki Hatsui; Yasuharu Tajima; Keita Oikawa; Mitsuru Nagasono; Takashi Kameshima; Tadashi Togashi; Kensuke Tono; Makina Yabashi; Hiroaki Kimura; Yasunori Senba; Haruhiko Ohashi; Takashi Sumiyoshi
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Calculated reactivity analysis of photoacid generators for EUV resist
Author(s): M. Endo; S. Tagawa
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Defect printability analysis in negative tone development lithography
Author(s): Junggun Heo; Changil Oh; Junghyung Lee; Minkyung Park; Hyungsuk Seo; Cheolkyu Bok; Donggyu Yim; Sungki Park
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A study on post-exposure delay of negative tone resist and its chemistry
Author(s): Medhat Toukhy; Margareta Paunescu; Chunwei Chen
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Predicting resist sensitivity to chemical flare effects though use of exposure density gradient method
Author(s): Michael Hyatt; Anton DeVilliers; Kaveri Jain
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Deprotonation mechanism of poly(styrene-acrylate)-based chemically amplified resist
Author(s): Y. Tajima; K. Okamoto; T. Kozawa; S. Tagawa; R. Fujiyoshi; T. Sumiyoshi
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Diffusion of amines from resist to BARC layer
Author(s): Masamitsu Shirai; Tatsuya Hatsuse; Haruyuki Okamura; Shigeo Kimura; Yasuyuki Nakajima
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Reduction of micro-bridging defects for 193nm immersion resist
Author(s): Lijing Gou; Vinay Nair; Hiroyuki Mori; Adam Olson; David Swindler; Anton Devilliers
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Study of major factors to affect photoresist profile on developable bottom anti-reflective coating process
Author(s): Hyo Jung Roh; Dong Kyu Ju; Hyun Jin Kim; Jaehyun Kim
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Photoinitiated polymerization of new hybrid monomer containing vinyl ether and (methyl) acryloyl groups
Author(s): Cuimei Diao; Yingquan Zou
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Analysis of the generating action of the acid from PAG using acid sensitive dyes
Author(s): Atsushi Sekiguchi; Yoko Matsumoto; Hiroko Konishi; Kengo Moriyasu; Yukihiro Morimoto
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Primary structure control of ArF resist polymer by regulating feed rate of monomers and initiator
Author(s): Tomoya Oshikiri; Atsushi Yasuda; Keisuke Kato; Shin-ichi Maeda
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Polymer-bound photobase generators and photoacid generators for pitch division lithography
Author(s): Younjin Cho; Xinyu Gu; Yuji Hagiwara; Takanori Kawakami; Toshiyuki Ogata; Brandon Rawlings; Yongjun Li; Arun K. Sundaresan; Nicholas J. Turro; Robert Bristol; James M. Blackwell; C. Grant Willson
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Development of molecular resists based on Phenyl[4]calixarene for EBL
Author(s): Masaaki Takasuka; Yu Okada; Hiromi Hayashi; Masatoshi Echigo
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Development of new Si-contained hardmask for tri-layer process
Author(s): Makoto Nakajima; Yuta Kanno; Wataru Shibayama; Satoshi Takeda; Masakazu Kato; Takashi Matsumoto
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Etch durable spin-on hard mask
Author(s): Makoto Muramatsu; Mitsuaki Iwashita; Takashi Kondo; Hisashi Hirose; Seiji Fujimoto
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Implementation of KrF DBARCs for implant applications on advanced lithography nodes
Author(s): Joyce Lowes; Alice Guerrero; Michael Weigand; Carlton Washburn; Charlyn Stroud; Shalini Sharma; David Torres; Mark Slezak; Gary Dabbagh; Cherry Tang
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A study of conductive material for e-beam lithography
Author(s): Wen-Yun Wang; Chen-Yu Liu; Tsung-Chih Chien; Chun-Ching Huang; Shy-Jay Lin; Ya-Hui Chang; Jack J.H. Chen; Ching-Yu Chang; Yao-Ching Ku; Burn J. Lin
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Development of plant-based resist materials in electron beam lithography
Author(s): Satoshi Takei; Akihiro Oshima; Naomi Yanamori; Atsushi Sekiguchi; Takahiro Kozawa; Seiichi Tagawa
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Environmentally friendly natural materials-based photoacid generators for next-generation photolithography
Author(s): Youngjin Cho; Christine Y. Ouyang; Marie Krysak; Wenjie Sun; Victor Gamez; Reyes Sierra-Alvarez; Christopher K. Ober
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Synthesis and photo-initiated polymerization of silicon-containing hybrid monomers
Author(s): Yuan Fang; Yingquan Zou
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Development of hard mask resist materials in nanoimprint lithography
Author(s): Satoshi Takei; Tsuyoshi Ogawa
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Study on a few α-disulfone compounds as photoacid generators
Author(s): Dongfang Guo; Juan Liu; Liyuan Wang
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Sensitive polysulfone based chain scissioning resists for 193nm lithography
Author(s): Yong Keng Goh; Lan Chen; Anneke Dorgelo; Xie Peng; Neal Lafferty; Bruce Smith; Paul Zimmerman; Warren Montgomery; Idriss Blakey; Andrew K. Whittaker
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Comparisons of the new thick negative resist to Su8 resist
Author(s): D. Bourrier; M. Dilhan; A. Ghannam; H. Granier
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Tailorable BARC system to provide optimum solutions for various substrates in immersion lithography
Author(s): Michael Swope; Vandana Krishnamurthy; Zhimin Zhu; Daniel Sullivan; Sean Simmons; Chris Cox; Randy Bennett; Cheryl Nesbit
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Using positive photomasks to pattern SU-8 masking layers for fabricating inverse MEMS structures
Author(s): Scott A. Ostrow; Jack P. Lombardi; Ronald A. Coutu
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Negative photo-imageable spin-on dielectrics: report on progress, challenges, and opportunities
Author(s): Ruzhi M. Zhang; Chien-Hsien S. Lee; Elizabeth Wolfer; Tatsuro Nagahara; Mark Neisser; Ralph R. Dammel
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Performance of tri-layer process required for 22 nm and beyond
Author(s): Yayi Wei; Martin Glodde; Hakeem Yusuff; Margaret Lawson; Sang Yil Chang; Kwang Sub Yoon; Chung-Hsi Wu; Mark Kelling
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Regeneration of imprint molds using vacuum ultraviolet light
Author(s): Masashi Nakao; Masanori Yamaguchi; Shintaro Yabu
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Plasma etching of high-resolution features in a fullerene molecular resist
Author(s): J. Manyam; M. Manickam; J. A. Preece; R. E. Palmer; A. P. G. Robinson
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Method of ellipsometric characterization of the resist and DBARC interface
Author(s): Michael Reilly; James F. Cameron; Sabrina Wong; Adam Ware
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Process optimization of high aspect ratio sub-32nm HSQ/AR3 bi-layer resist pillar
Author(s): Wei-Su Chen; Ming-Jinn Tsai
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The enhanced photoresist shrink process technique toward 22nm node
Author(s): Kenichi Oyama; Shohei Yamauchi; Kazuo Yabe; Arisa Hara; Sakurako Natori; Hidetami Yaegashi
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LWR reduction and flow of chemically amplified resist patterns during sub-millisecond heating
Author(s): Byungki Jung; Christopher K. Ober; Michael O. Thompson; Manish Chandhok
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Critical challenges for non-critical layers
Author(s): J. M. Gomez; I. Y. Popova; B. Zhang; H. Kry; S. J. Holmes; S. Nakagawa; T. Murakami; Chan Sam Chang; Cheol Kim
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SUEX process optimization for ultra-thick high-aspect ratio LIGA imaging
Author(s): Donald W. Johnson; Jost Goettert; Varshni Singh; Dawit Yemane
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E-beam patterning and stability study of sub-22nm HSQ pillars
Author(s): Wei-Su Chen; Ming-Jinn Tsai
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A study of an acid-induced defect on chemically amplified photoresist applied to sub-30nm NAND flash memory
Author(s): Yong-Hyun Lim; Jae-Doo Eom; Woo-Yung Jung; Min-Sik Jang; Byung-Seok Lee; Jin-Woong Kim
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Investigation of processing performance and requirements for next generation lithography cluster tools
Author(s): M. Enomoto; T. Shimoaoki; K. Nafus; N. Nakashima; K. Tsutsumi; H. Marumoto; H. Kosugi; P. Derwin; R. Maas; C. Verspaget; J. Mallmann; R. Vangheluwe; I. Lamers; E. van der Heijden; S. Wang
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Characterization of filter performance on contact-hole defectivity
Author(s): J. Braggin; N. Vitorino; V. Monreal; J. Zook
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Improving material-specific dispense processes for low-defect coatings
Author(s): Nick Brakensiek; Jennifer Braggin; John Berron; Raul Ramirez; Karl Anderson; Brian Smith
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Resist dispense system for further defect reduction
Author(s): Yusuke Yamamoto; Kouzo Nishi; Koji Takayanagi; Takahiro Okubo; Toshinobu Furusho; Kosuke Yoshihara; Tsuyoshi Shibata
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Developing directly photodefinable substrate guiding layers for block copolymer directed self-assembly (DSA) patterning
Author(s): Jing Cheng; Richard A. Lawson; Wei-Ming Yeh; Laren M. Tolbert; Clifford L. Henderson
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A study of reactive adhesion promoters and their ability to mitigate pattern collapse in thin film lithography
Author(s): Wei-Ming Yeh; Richard A. Lawson; Laren M. Tolbert; Clifford L Henderson
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A comprehensive model and method for model parameterization for predicting pattern collapse behavior in photoresist nanostructures
Author(s): Wei-Ming Yeh; Richard A. Lawson; Clifford L. Henderson
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The effect of drying rate on pattern collapse performance in thin film lithography
Author(s): Wei-Ming Yeh; Richard A. Lawson; Laren M. Tolbert; Clifford L. Henderson
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