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PROCEEDINGS VOLUME 7971

Metrology, Inspection, and Process Control for Microlithography XXV
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Volume Details

Volume Number: 7971
Date Published: 28 March 2011

Table of Contents
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Front Matter: Volume 7971
Author(s): Proceedings of SPIE
A holistic metrology approach: hybrid metrology utilizing scatterometry, CD-AFM, and CD-SEM
Author(s): Alok Vaid; Bin Bin Yan; Yun Tao Jiang; Mark Kelling; Carsten Hartig; John Allgair; Peter Ebersbach; Matthew Sendelbach; Narender Rana; Ahmad Katnani; Erin Mclellan; Chas Archie; Cornel Bozdog; Helen Kim; Michael Sendler; Susan Ng; Boris Sherman; Boaz Brill; Igor Turovets; Ronen Urensky
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Litho process control via optimum metrology sampling while providing cycle time reduction and faster metrology-to-litho turn around time
Author(s): K.-H. Chen; Jacky Huang; W.-T. Yang; C.-M. Ke; Y.-C. Ku; John Lin; Kaustuve Bhattacharyya; Evert Mos; Mir Shahrjerdy; Maurits van der Schaar; Steffen Meyer; Spencer Lin; Jon Wu; Sophie Peng; Albert Li; Nikki Chang; Roy Chu; Cathy Wang
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Mask registration impact on intrafield on-wafer overlay performance
Author(s): Guo-Tsai Huang; Alex Chen; Tung-Yaw Kang; S. C. Lee; Frank Laske; Klaus-Dieter Roethe; DongSub Choi; Chiang Reinhart; John C. Robinson; You Seung Jin; Lin Chua; David Tien; Venkat R. Nagaswami
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Application of mask process correction (MPC) to monitor and correct mask process drift
Author(s): Timothy Lin; Tom Donnelly; Gordon Russell; Sunwook Jung; Jiyoung Jeong
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Sub-nanometer line width and line profile measurement for CD-SEM calibration by using STEM
Author(s): Kiyoshi Takamasu; Haruki Okitou; Satoru Takahashi; Mitsuru Konno; Osamu Inoue; Hiroki Kawada
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Challenges of SEM-based critical dimension metrology of interconnect
Author(s): Vladimir A. Ukraintsev; Scott Jessen; Brian Mikeska; Chris Sallee; Vitali Khvatkov
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Robust edge detection with considering three-dimensional sidewall feature by CD-SEM
Author(s): A. Yamaguchi; H. Koyanagi; J. Tanaka; O. Inoue; H. Kawada
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Tool-to-tool matching issues due to photoresist shrinkage effects
Author(s): Benjamin Bunday; Aaron Cordes; Carsten Hartig; John Allgair; Alok Vaid; Eric Solecky; Narender Rana
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Influence of the charging effect on the precision of measuring EUV mask features
Author(s): Yasushi Nishiyama; Hidemitsu Hakii; Isao Yonekura; Keishi Tanaka; Yasutaka Kikuchi
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Optical illumination optimization for patterned defect inspection
Author(s): Bryan M. Barnes; Richard Quinthanilha; Yeung-Joon Sohn; Hui Zhou; Richard M. Silver
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Wafer noise models for defect inspection
Author(s): Timothy F. Crimmins
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Quantitative measurement of voltage contrast in SEM images for in-line resistance inspection of incomplete contact
Author(s): Miyako Matsui; Tasuku Yano; Takayuki Odaka
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Characterization of EUV resists for defectivity at 32nm
Author(s): Ofir Montal; Ido Dolev; Moshe Rosenzweig; Kfir Dotan; Doron Meshulach; Ofer Adan; Shimon Levi; Man-Ping Cai; Chris Bencher; Chris S. Ngai; Christiane Jehoul; Dieter Van Den Heuvel; Eric Hendrickx
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OPC verification and hotspot management for yield enhancement through layout analysis
Author(s): Gyun Yoo; Jungchan Kim; Taehyeong Lee; Areum Jung; Hyunjo Yang; Donggyu Yim; Sungki Park; Kotaro Maruyama; Masahiro Yamamoto; Abhishek Vikram; Sangho Park
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A new methodology for TSV array inspection
Author(s): Yoshihiko Fujimori; Takashi Tsuto; Yuji Kudo; Takeshi Inoue; Kazuya Okamoto
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Statistical-noise effect on power spectrum of line-edge and line-width roughness with long-range correlation
Author(s): Atsushi Hiraiwa; Akio Nishida
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Reduction of SEM noise and extended application to prediction of CD uniformity and its experimental validation
Author(s): Hoyeon Kim; Chan Hwang; Seok-hwan Oh; Jeongho Yeo; Young hee Kim
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High-precision edge-roughness measurement of transistor gates using three-dimensional electron microscopy combined with marker-assisted image alignment
Author(s): Shiano Ono; Miyuki Yamane; Mitsuo Ogasawara; Akira Katakami; Jiro Yugami; Masanari Koguchi; Hiroyuki Shinada; Hiroshi Kakibayashi; Kazuto Ikeda; Yuzuru Ohji
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Mueller matrix ellipsometry of artificial non-periodic line edge roughness in presence of finite numerical aperture
Author(s): Martin Foldyna; Thomas A. Germer; Brent C. Bergner
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A CD-gap-free contour extraction technique for OPC model calibration
Author(s): T. Shibahara; T. Minakawa; M. Oikawa; H. Shindo; H. Sugahara; Y. Hojyo
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Fast and accurate calibration for OPC process-window model using inverse weight algorithm
Author(s): Ashesh Parikh
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Contact edge roughness (CER) characterization and modeling: effects of dose on CER and critical dimension (CD) variation
Author(s): Vijaya-Kumar Murugesan Kuppuswamy; Vassilios Constantoudis; Evangelos Gogolides; Alessandro Vaglio Pret; Roel Gronheid
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Hybrid CD metrology concept compatible with high-volume manufacturing
Author(s): J. Foucher; P. Faurie; L. Dourthe; B. Irmer; C. Penzkofer
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TSOM method for semiconductor metrology
Author(s): Ravikiran Attota; Ronald G. Dixson; John A. Kramar; James E. Potzick; András E. Vladár; Benjamin Bunday; Erik Novak; Andrew Rudack
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Experimental validation of 2D profile photoresist shrinkage model
Author(s): Benjamin Bunday; Aaron Cordes; Andy Self; Lorena Ferry; Alex Danilevsky
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Surface modification of EUVL mask blanks by e-beam
Author(s): Arun John Kadaksham; Thomas Laursen; Timothy Owen; Jon Underwood; Abbas Rastegar
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High-throughput critical dimensions uniformity (CDU) measurement of two-dimensional (2D) structures using scanning electron microscope (SEM) systems
Author(s): Jennifer Fullam; Carol Boye; Theodorus Standaert; John Gaudiello; Derek Tomlinson; Hong Xiao; Wei Fang; Xu Zhang; Fei Wang; Long Ma; Yan Zhao; Jack Jau
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Verification and extension of the MBL technique for photo resist pattern shape measurement
Author(s): Miki Isawa; Maki Tanaka; Hideyuki Kazumi; Chie Shishido; Akira Hamamatsu; Norio Hasegawa; Peter De Bisschop; David Laidler; Philippe Leray; Shaunee Cheng
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A method for improving resolution of a scanning electron microscope for inspection of nanodevices
Author(s): Muneyuki Fukuda; Noritsugu Takahashi; Tomoyasu Shojo; Hiroya Ohta; Hiroshi Suzuki
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Metrology characterization of spacer double patterning by scatterometry
Author(s): Prasad Dasari; Jie Li; Jiangtao Hu; Zhuan Liu; Oleg Kritsun; Catherine Volkman
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Optical far field measurements applied to microroughness determination of periodic microelectronic structures
Author(s): Alexandre Vauselle; Philippe Maillot; Gaëlle Georges; Carole Deumié
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A holistic metrology approach: multi-channel scatterometry for complex applications
Author(s): Cornel Bozdog; Hyang Kyun Kim; Susan Emans; Boris Sherman; Igor Turovets; Ronen Urensky; Boaz Brill; Alok Vaid; Matthew Sendelbach
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Diffraction based overlay re-assessed
Author(s): Philippe Leray; David Laidler; Koen D'havé; Shaunee Cheng
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Overlay measurements by Mueller polarimetry in the back focal plane
Author(s): Tatiana Novikova; Clément Fallet; Martin Foldyna; Sandeep Manhas; Bicher Haj Ibrahim; Antonello De Martino; Cyril Vannuffel; Christophe Constancias
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Nested uncertainties and hybrid metrology to improve measurement accuracy
Author(s): R. M. Silver; N. F. Zhang; B. M. Barnes; H. Zhou; J. Qin; R. Dixson
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Reconciling measurements in AFM reference metrology when using different probing techniques
Author(s): Narender Rana; Charles Archie; Johann Foucher
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New three-dimensional AFM for CD measurement and sidewall characterization
Author(s): Yueming Hua; Cynthia Buenviaje-Coggins; Yong-ha Lee; Jung-min Lee; Kyung-deuk Ryang; Sang-il Park
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High-speed atmospheric imaging of semiconductor wafers using rapid probe microscopy
Author(s): Priyanka Kohli; Jeff Lyons; Andrew D. L. Humphris; Benjamin D. Bunday; Abraham Arceo; Akira Hamaguchi; Dilip Patel; David Bakker
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Artifacts of the AFM image due to the probe controlling parameters
Author(s): Hiroshi Itoh; Chunmei Wang; Hideki Takagi
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High sensitive and fast scanner focus monitoring method using forbidden pitch pattern
Author(s): Jinseok Heo; Jeong-Ho Yeo; Younghee Kim
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Overlay improvement roadmap: strategies for scanner control and product disposition for 5-nm overlay
Author(s): Nelson M. Felix; Allen H. Gabor; Vinayan C. Menon; Peter P. Longo; Scott D. Halle; Chiew-seng Koay; Matthew E. Colburn
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Accuracy of diffraction-based and image-based overlay
Author(s): Chih-Ming Ke; Guo-Tsai Huang; Jacky Huang; Rita Lee
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Investigation on accuracy of process overlay measurement
Author(s): Chan Hwang; Jeongjin Lee; Seungyoon Lee; Jeongho Yeo; Yeonghee Kim; Hongmeng Lim; Dongsub Choi
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Improved overlay control using robust outlier removal methods
Author(s): John C. Robinson; Osamu Fujita; Hiroyuki Kurita; Pavel Izikson; Dana Klein; Inna Tarshish-Shapir
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Wafer quality analysis of various scribe line mark designs
Author(s): Jianming Zhou; Craig Hickman; Yuan He; Scott Light; Lucas Lamonds; Anton deVilliers
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Overlay and focus stability control for 28-nm nodes on immersion scanners
Author(s): Guo-Tsai Huang; Kai-Hsiung Chen; Li-Jui Chen; Tsai-Sheng Gau; Reiner Jungblut; Albert Chen; Ethan Lee; Lester Wang; Miranda Un; Wei-Shun Tzeng; Jim Chen; Spencer Lin; Jon Wu
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Towards 22 nm: fast and effective intra-field monitoring and optimization of process windows and CDU
Author(s): Yaron Cohen; Jo Finders; Roel Knops; Orion Mouraille; Ingrid Minnaert-Janssen; Frank Duray; Evert Mos; Alexander Kremer; Amir Sagiv; Shmoolik Mangan; Michael Ben Yishay; Huixiong Dai; Christopher Bencher; Christopher Ngai; Kfir Dotan; Ilan Englard
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Automatic optimization of metrology sampling scheme for advanced process control
Author(s): Chuei-Fu Chue; Chun-Yen Huang; Chiang-Lin Shih
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CD uniformity improvement of through-pitch contact-hole patterning for advanced logic devices
Author(s): Takaaki Kuribayashi; Yoshinori Matsui; Kazuyuki Yoshimochi; Seiji Nagahara; Takayuki Uchiyama
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Sensitivity of LWR and CD linearity to process conditions in active area
Author(s): Guy Ayal; Elena Malkes; Efraim Aharoni; Shimon Levi; Amit Siany; Ofer Adan; Eitan Shauly; Yosi Shacham-Diamand
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Real-time detection system of defects on a photo mask by using the light scattering and interference method
Author(s): Jae Heung Jo; Sangon Lee; Hae Sung Wee; Jong Soo Kim
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Improved secondary electron extraction efficiency model for accurate measurement of narrow-space patterns using model-based library matching
Author(s): Chie Shishido; Maki Tanaka; Akira Hamamatsu
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Scatterometry simulator using GPU and evolutionary algorithm
Author(s): Hirokimi Shirasaki
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Simulation of non-uniform wafer geometry and thin film residual stress on overlay errors
Author(s): Sathish Veeraraghaven; Kevin T. Turner; Jaydeep Sinha
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Study of scanner stage vibration by using scatterometry
Author(s): Dabai Jiang; Wenzhan Zhou; Michael Hsieh; Qunying Lin
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Advancements of diffraction-based overlay metrology for double patterning
Author(s): Jie Li; Oleg Kritsun; Yongdong Liu; Prasad Dasari; Ulrich Weher; Catherine Volkman; Martin Mazur; Jiangtao Hu
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CD-SEM image-distortion measured by view-shift method
Author(s): Osamu Inoue; Takahiro Kawasaki; Miyako Matsui; Hiroki Kawada
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Scatterometry for EUV lithography at the 22-nm node
Author(s): Benjamin Bunday; Victor Vartanian; Liping Ren; George Huang; Cecilia Montgomery; Warren Montgomery; Alex Elia; Xiaoping Liu
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Study of the three-dimensional shape measurement for mask patterns using Multiple Detector CD-SEM
Author(s): Isao Yonekura; Hidemitsu Hakii; Masashi Kawashita; Yasushi Nishiyama; Keishi Tanaka; Yasutaka Kikuchi; Tsutomu Murakawa; Soichi Shida; Masayuki Kuribara; Toshimichi Iwai; Jun Matsumoto; Takayuki Nakamura
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EB defect inspection of EUV resist patterned wafer for hp 32 nm and beyond
Author(s): Mari Nozoe; Toshihiko Tanaka; Takashi Kamo; Shinji Kubo; Tomohiro Tamori; Noriaki Takagi; Takeshi Yamane; Tsuneo Terasawa; Hiroyuki Shigemura; Osamu Suga
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The study of high-sensitivity metrology method by using CD-SEM
Author(s): K. Ueda; S. Koshihara; T. Mizuno; A. Miura
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EUV defect characterization study on post litho and etch for 1x and 2x node processes
Author(s): Ofir Montal; Man-Ping Cai; Kfir Dotan; Ido Dolev; Tom Wallow; Obert Wood; Uzo Okoroanyanwu; Moshe Rozentsvige; Chris Ngai; Chris Bencher; Amiad Conley
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High-order stitching overlay analysis for advanced process control
Author(s): Y. C. Pai; Charlie Chen; Louis Jang; Howard Chen; Chun-Chi Yu; Chin-Chou K. Huang; Hsing-Chien Wu; John C. Robinson; David Tien
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Influence of BARC filtration and materials on the reduction of spire defects
Author(s): Jens Schneider; Susanne Volkland; Ulrike Feldner; Lincoln O'Riain; Dirk Peters; Felix Braun; Lothar Brencher; Barbara Hornig; Oliver Luxenhofer; Daniel Sarlette
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Novel CD-SEM magnification calibration reference of sub-50-nm pitch multi-layer grating with positional identification mark
Author(s): Yoshinori Nakayama; Jiro Yamamoto; Osamu Inoue; Hiroki Kawada; Shozo Yoneda
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Expanding the applications of computational lithography and inspection (CLI) in mask inspection, metrology, review, and repair
Author(s): Linyong Pang; Danping Peng; Peter Hu; Dongxue Chen; Lin He; Ying Li; Chris Clifford; Vikram Tolani
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Methodology for overlay mark selection
Author(s): Chin-Chou Kevin Huang; Chao-Tien Healthy Huang; Anna Golotsvan; David Tien; Chui-Fu Chiu; Chun-Yen Huang; Wen-Bin Wu; Chiang-Lin Shih
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Process solutions for reducing PR residue over non-planar wafer
Author(s): C. H. Lin; C. H. Huang; Elvis Yang; T. H. Yang; K. C. Chen; Chih-Yuan Lu
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Impact of pellicle on overlay in double patterning lithography
Author(s): Oliver Loeffler; Frank Laske; Michael Ferber; Klaus-Dieter Roeth; Lin Chua; You Seung Jin; Gino Marcuccilli; Venkat Nagaswami
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3D features measurement using YieldStar, an angle resolved polarized scatterometer
Author(s): Anne-Laure Charley; Philippe Leray; Koen D'havé; Shaunee Cheng; Paul Hinnen; Fahong Li; Peter Vanoppen; Mircea Dusa
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The assessment of the impact of mask pattern shape variation on the OPC-modeling by using SEM-Contours from wafer and mask
Author(s): Daisuke Hibino; Yutaka Hojyo; Hiroyuki Shindo; Thuy Do; Aasutosh Dave; Tim Lin; Ir Kusnadi; John L. Sturtevant
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Calibration studies of pattern top resist loss detection by CD-SEM for advanced lithography process
Author(s): Toru Ishimoto; Miki Isawa; Maki Tanaka; Shaunee Cheng
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Approaches to airborne molecular contamination assessment
Author(s): Sarah Riddle Vogt; Cristian Landoni
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Metrology of micro-step height structures using 3D scatterometry in 4x-nm advance DRAM
Author(s): Mason Duan; Clark Chen; Calvin Hsu; Elvis Wang; ZhiQing Xu; Elsie Yu; Qiongyan Yuan; Sungchul Yoo; Zhengquan Tan
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A study and simulation of the impact of high-order aberrations to overlay error distribution
Author(s): G. Sun; F. Wang; C. Zhou
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Wafer-edge defect reduction for tri-layer materials in BEOL applications
Author(s): J. R. Du; C. H. Huang; Elvis Yang; T. H. Yang; K. C. Chen; Chih-Yuan Lu
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Enhanced defect of interest [DOI] monitoring by utilizing sensitive inspection and ADRTrue SEM review
Author(s): Remo Kirsch; Ulrich Zeiske; Saar Shabtay; Mirko Beyer; Liran Yerushalmi; Oren Goshen
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Multifeature focus exposure matrix for tool diagnosis
Author(s): Zhiyong Yang; Anatoly Y. Burov; Lifeng Duan; Fan Wang
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Scatterometry measurement for gate ADI and AEI critical dimension of 28-nm metal gate technology
Author(s): Yu-Hao Huang; Howard Chen; Kyle Shen; H. H. Chen; Chun Chi Yu; J. H. Liao; Xiafang Zhang; Russell Teo; Zhi-Qing Xu; Sungchul Yoo; Ching-Hung Lin; Chao-Yu Cheng; Jason Lin
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Surface scanning inspection system defect classification of CMP induced scratches
Author(s): Steve McGarvey; Anne E. Miller
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RS-Mini: an enterprise class highly compact mask inspection defect management framework for the mask and wafer fab infrastructure
Author(s): Saghir Munir
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Wavefront measurement for EUV lithography system through Hartmann sensor
Author(s): A. Polo; F. Bociort; S. F. Pereira; H. P. Urbach
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Diffraction-based overlay for spacer patterning and double patterning technology
Author(s): Byoung Hoon Lee; JeongSu Park; Jongsu Lee; Sarohan Park; ChangMoon Lim; Dong-Gyu Yim; Sungki Park; Chan-Ho Ryu; Stephen Morgan; Maurits van de Schaar; Andreas Fuchs; Kaustuve Bhattacharyya
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Automated CD-SEM recipe creation technology for mass production using CAD data
Author(s): Toshikazu Kawahara; Masamichi Yoshida; Masashi Tanaka; Sanyu Ido; Hiroyuki Nakano; Naokaka Adachi; Yuichi Abe; Wataru Nagatomo
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