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Proceedings of SPIE Volume 7969

Extreme Ultraviolet (EUV) Lithography II
Editor(s): Bruno M. La Fontaine; Patrick P. Naulleau
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Volume Details

Volume Number: 7969
Date Published: 25 March 2011
Softcover: 106 papers (1040) pages
ISBN: 9780819485281

Table of Contents
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Front Matter: Volume 7969
Author(s): Proceedings of SPIE
Printability and inspectability of defects on the EUV mask for sub-32nm half pitch HVM application
Author(s): Sungmin Huh; In-Yong Kang; Sang-Hyun Kim; Hwan-seok Seo; Dongwan Kim; Jooon Park; Seong-Sue Kim; Han-Ku Cho; Kenneth Goldberg; Iacopo Mochi; Tsutomu Shoki; Gregg Inderhees
Show Abstract
Modeling the transfer of line edge roughness from an EUV mask to the wafer
Author(s): Gregg M. Gallatin; Patrick P. Naulleau
Show Abstract
EUV secondary electron blur at the 22nm half pitch node
Author(s): Roel Gronheid; Todd R. Younkin; Michael J. Leeson; Carlos Fonseca; Joshua S. Hooge; Kathleen Nafus; John J. Biafore; Mark D. Smith
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Development status of EUV resist materials and processing at Selete
Author(s): Kentaro Matsunaga; Gousuke Shiraishi; Julius Joseph Santillian; Koji Kaneyama; Hiroaki Oizumi; Toshiro Itani
Show Abstract
Comprehensive EUV lithography model
Author(s): Mark D. Smith; Trey Graves; John Biafore; Stewart Robertson; Cheolkyun Kim; James Moon; Jaeheon Kim; Cheolkyu Bok; Donggyu Yim
Show Abstract
Additive-loaded EUV photoresists: performance enhancement and the underlying physics
Author(s): Vikram K. Daga; Ying Lin; James J. Watkins; Uzodinma Okoroanyanwu; Karen Petrillo; Dominic Ashworth; Hua-Gen Peng; Christopher L. Soles
Show Abstract
100W 1st generation laser-produced plasma light source system for HVM EUV lithography
Author(s): Hakaru Mizoguchi; Tamotsu Abe; Yukio Watanabe; Takanobu Ishihara; Takeshi Ohta; Tsukasa Hori; Tatsuya Yanagida; Hitoshi Nagano; Takayuki Yabu; Shinji Nagai; Georg Soumagne; Akihiko Kurosu; Krzysztof M. Nowak; Takashi Suganuma; Masato Moriya; Kouji Kakizaki; Akira Sumitani; Hidenobu Kameda; Hiroaki Nakarai; Junichi Fujimoto
Show Abstract
Gas-based spectral filter for mitigating 10.6 um radiation in CO2 laser produced plasma extreme ultraviolet sources
Author(s): Chimaobi Mbanaso; Gregory Denbeaux; Alin Antohe; Horace Bull; Frank Goodwin; Ady Hershcovitch
Show Abstract
Cooled EUV collector optics for LPP and DPP sources
Author(s): X. Bozec; L. Moine; R. Wevers; S. Djidel; R. Mercier Ythier; R. Geyl; V. Patoz
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Enabling the 22nm node via grazing incidence collectors integrated into the DPP source for EUVL HVM
Author(s): G. Bianucci; A. Bragheri; G. L. Cassol; R. Ghislanzoni; R. Mazzoleni; F. E. Zocchi
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High-brightness LPP source for actinic mask inspection
Author(s): S. Ellwi; F. Abreau
Show Abstract
Combined effects of pre-pulsing and target geometry on efficient EUV production from laser produced plasma experiments and modeling
Author(s): A. Hassanein; T. Sizyuk; V. Sizyuk; S. S. Harilal
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Replicated mask surface roughness effects on EUV lithographic patterning and line edge roughness
Author(s): Simi A. George; Patrick P. Naulleau; Eric M. Gullikson; Iacopo Mochi; Farhad Salmassi; Kenneth A. Goldberg; Erik H. Anderson
Show Abstract
AIMS EUV: the actinic aerial image review platform for EUV masks
Author(s): Dirk Hellweg; Johannes Ruoff; Alois Herkommer; Joachim Stühler; Thomas Ihl; Heiko Feldmann; Michael Ringel; Ulrich Strößner; Sascha Perlitz; Wolfgang Harnisch
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SEMATECH's infrastructure for defect metrology and failure analysis to support its EUV mask defect reduction program
Author(s): V. Jindal; C. C. Lin; J. Harris-Jones; J. Kageyama
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Evaluation of EUV mask defect using blank inspection, patterned mask inspection, and wafer inspection
Author(s): Takashi Kamo; Tsuneo Terasawa; Takeshi Yamane; Hiroyuki Shigemura; Noriaki Takagi; Tsuyoshi Amano; Kazuo Tawarayama; Mari Nozoe; Toshihiko Tanaka; Osamu Suga; Ichiro Mori
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The NIST EUV facility for advanced photoresist qualification using the witness-sample test
Author(s): S. Grantham; C. Tarrio; S. B. Hill; L. J. Richter; T. B. Lucatorto; J. van Dijk; C. Kaya; N. Harned; R. Hoefnagels; M. Silova; J. Steinhoff
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Influence of environments on the footprint of particle contamination on EUV mask
Author(s): Tae-Gon Kim; Els Kesters; Herbert Struyf; Paul W. Mertens; Stefan De Gendt; Marc Heyns
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Optics contamination studies in support of high-throughput EUV lithography tools
Author(s): S. B. Hill; N. S. Faradzhev; L. J. Richter; S. Grantham; C. Tarrio; T. B. Lucatorto; S. Yulin; M. Schürmann; V. Nesterenko; T. Feigl
Show Abstract
A simple modeling of carbon contamination on EUV exposure tools based on contamination experiments with synchrotron source
Author(s): M. Shiraishi; T. Yamaguchi; A. Yamazaki; N. Kandaka; T. Oshino; K. Murakami
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Development of EUV lithography tools at Nikon
Author(s): Katsuhiko Murakami; Tetsuya Oshino; Hiroyuki Kondo; Hiroshi Chiba; Kazushi Nomura; Hidemi Kawai; Yoshiaki Kohama; Kenji Morita; Kazunari Hada; Yukiharu Ohkubo
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Resolution capability of SFET with slit and dipole illumination
Author(s): Yuusuke Tanaka; Kentaro Matsunaga; Shunko Magoshi; Seiichiro Shirai; Kazuo Tawarayama; Hiroyuki Tanaka
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The SEMATECH Berkeley MET: extending EUV learning down to 16nm half pitch
Author(s): Christopher N. Anderson; Lorie Mae Baclea-An; Paul E. Denham; Simi A. George; Kenneth A. Goldberg; Michael S. Jones; Nathan S. Smith; Thomas I. Wallow; Warren Montgomery; Patrick P. Naulleau
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Investigation of EUV tapeout flow issues, requirements, and options for volume manufacturing
Author(s): Jonathan Cobb; Sunghoon Jang; Junghoon Ser; Insung Kim; Johnny Yeap; Kevin Lucas; Munhoe Do; Young-Chang Kim
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EUV flare and proximity modeling and model-based correction
Author(s): Christian Zuniga; Mohamed Habib; James Word; Gian F. Lorusso; Eric Hendrickx; Burak Baylav; Raghu Chalasani; Michael Lam
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EUV OPC for 56nm metal pitch
Author(s): Martin Burkhardt; Matt Colburn; Yunfei Deng; Emily Gallagher; Hirokazu Kato; Greg McIntyre; Karen Petrillo; Sudhar Raghunathan; Adam C. Smith; Tom Wallow; Obert Wood; Yi Zou; Christian Zuniga
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Phase defect printability and actinic dark-field mask blank inspection capability analyses
Author(s): Tsuneo Terasawa; Takeshi Yamane; Takashi Kamo; Toshihiko Tanaka; Osamu Suga
Show Abstract
EUV masks under exposure: practical considerations
Author(s): Emily Gallagher; Gregory McIntyre; Tom Wallow; Sudharshanan Raghunathan; Obert Wood; Louis Kindt; John Whang; Monica Barrett
Show Abstract
Towards defect free EUVL reticles: carbon and particle removal by single dry cleaning process and pattern repair by HIM
Author(s): N. B. Koster; F. T. Molkenboer; E. van Veldhoven; S. Oostrom
Show Abstract
Feasibility of EUVL thin absorber mask for sub-32nm half pitch patterning
Author(s): Yoonsuk Hyun; Juntaek Park; Sunyoung Koo; Yongdae Kim; Seokkyun Kim; Changmoon Lim; Donggyu Yim; Sungki Park
Show Abstract
Current status of EUV mask blanks and LTEM substrates defectivity and cleaning of blanks exposed in EUV ADT
Author(s): Arun John Kadaksham; Byunghoon Lee; Matt House; Thomas Laursen; Brian Niekrewicz; Abbas Rastegar
Show Abstract
An EUV Fresnel zoneplate mask-imaging microscope for lithography generations reaching 8 nm
Author(s): Kenneth A. Goldberg; Iacopo Mochi; Senajith B. Rekawa; Nathan S. Smith; James B. Macdougall; Patrick P. Naulleau
Show Abstract
Understanding EUV resist dissolution characteristics and its impact to RLS limitations
Author(s): Carlos Fonseca; Brian Head; Hideo Shite; Kathleen Nafus; Roel Gronheid; Gustaf Winroth
Show Abstract
Impact of polymerization process on OOB on lithographic performance of a EUV resist
Author(s): Vipul Jain; Suzanne M. Coley; Jung June Lee; Matthew D. Christianson; Daniel J. Arriola; Paul LaBeaume; Maria E. Danis; Nicolas Ortiz; Su-Jin Kang; Michael D. Wagner; Amy Kwok; David A. Valeri; James W. Thackeray
Show Abstract
Line width roughness control and pattern collapse solutions for EUV patterning
Author(s): Karen Petrillo; George Huang; Dominic Ashworth; Jacque Georger; Liping Ren; K. Y. Cho; Warren Montgomery; Stefan Wurm; Shinichiro Kawakami; Shannon Dunn; Akiteryu Ko
Show Abstract
Out of band radiation effects on resist patterning
Author(s): Simi A. George; Patrick P. Naulleau
Show Abstract
Directly patterned inorganic hardmask for EUV lithography
Author(s): Jason K. Stowers; Alan Telecky; Michael Kocsis; Benjamin L. Clark; Douglas A. Keszler; Andrew Grenville; Chris N. Anderson; Patrick P. Naulleau
Show Abstract
CD uniformity improvement for EUV resists process: EUV resolution enhancement layer
Author(s): Hyun-Woo Kim; Hai-Sub Na; Chang-Min Park; Cheolhong Park; Sumin Kim; Chawon Koh; In-Sung Kim; Han-Ku Cho
Show Abstract
Photoresist shrinkage effects at EUV
Author(s): Thomas V. Pistor; Thomas I. Wallow; Christopher N. Anderson; Patrick P. Naulleau
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LWR improvement in EUV resist process
Author(s): Chawon Koh; Hyun-Woo Kim; Sumin Kim; Hai-Sub Na; Chang-Min Park; Cheolhong Park; Kyoung-Yong Cho
Show Abstract
Stochastic exposure kinetics of EUV photoresists: a simulation study
Author(s): Chris A. Mack; James W. Thackeray; John J. Biafore; Mark D. Smith
Show Abstract
Modeling the EUV multilayer deposition process on EUV blanks
Author(s): V. Jindal; P. Kearney; Jenah Harris-Jones; Alan Hayes; Jacques Kools
Show Abstract
Demonstration of defect free EUV mask for 22nm NAND flash contact layer using electron beam inspection system
Author(s): Takeya Shimomura; Satoshi Kawashima; Yuichi Inazuki; Tsukasa Abe; Tadahiko Takikawa; Hiroshi Mohri; Naoya Hayashi; Fei Wang; Long Eric Ma; Yan Zhao; Chiyan Kuan; Hong Xiao; Jack Jau
Show Abstract
Development of new FIB technology for EUVL mask repair
Author(s): Fumio Aramaki; Takashi Ogawa; Osamu Matsuda; Tomokazu Kozakai; Yasuhiko Sugiyama; Hiroshi Oba; Anto Yasaka; Tsuyoshi Amano; Hiroyuki Shigemura; Osamu Suga
Show Abstract
Printability of buried mask defects in extreme UV lithography
Author(s): Pei-Cheng Hsu; Ming-Jiun Yao; Wen-Chang Hsueh; Chia-Jen Chen; Shin-Chang Lee; Ching-Fang Yu; Luke Hsu; Sheng-Ji Chin; Jimmy Hu; Shu-Hao Chang; Chih-T'sung Shih; Yen-Cheng Lu; Timothy Wu; Shinn-Sheng Yu; Anthony Yen
Show Abstract
Compensation for EUV multilayer defects within arbitrary layouts by absorber pattern modification
Author(s): Linyong Leo Pang; Chris Clifford; Peter Hu; Danping Peng; Ying Li; Dongxue Chen; Masaki Satake; Vikram Tolani; Lin He
Show Abstract
EUV lithography at chipmakers has started: performance validation of ASML's NXE:3100
Author(s): Christian Wagner; Jose Bacelar; Noreen Harned; Erik Loopstra; Stef Hendriks; Ivo de Jong; Peter Kuerz; Leon Levasier; Mark van de Kerkhof; Martin Lowisch; Hans Meiling; David Ockwell; Rudy Peeters; Eelco van Setten; Judon Stoeldraijer; Stuart Young; John Zimmerman; Ron Kool
Show Abstract
Tin LDP source collector module (SoCoMo) ready for integration into Beta scanner
Author(s): Masaki Yoshioka; Yusuke Teramoto; Jeroen Jonkers; Max C. Schürmann; Rolf Apetz; Volker Kilian; Marc Corthout
Show Abstract
LPP source system development for HVM
Author(s): David C. Brandt; Igor V. Fomenkov; Alex I. Ershov; William N. Partlo; David W. Myers; Richard L. Sandstrom; Bruno M. La Fontaine; Michael J. Lercel; Alexander N. Bykanov; Norbert R. Böwering; Georgiy O. Vaschenko; Oleh V. Khodykin; Shailendra N. Srivastava; Imtiaz Ahmad; Chirag Rajyaguru; Palash Das; Vladimir B. Fleurov; Kevin Zhang; Daniel J. Golich; Silvia De Dea; Richard R. Hou; Wayne J. Dunstan; Christian J. Wittak; Peter Baumgart; Toshihiko Ishihara; Rod D. Simmons; Robert N. Jacques; Robert A. Bergstedt
Show Abstract
CD correction for half pitch 2x-nm on extreme ultraviolet lithography
Author(s): Hajime Aoyama; Yuusuke Tanaka; Kazuo Tawarayama; Yukiyasu Arisawa; Taiga Uno; Takashi Kamo; Toshihiko Tanaka; Alan Myers; Yashesh Shroff; Tetsunori Murachi; Gilroy Vandentop; Ichiro Mori
Show Abstract
Patterning challenges in setting up a 16nm node 6T-SRAM device using EUV lithography
Author(s): Tom Vandeweyer; Johan De Backer; Janko Versluijs; Vincent Truffert; Staf Verhaegen; Monique Ercken; Mircea Dusa
Show Abstract
Manufacturability of 2x-nm devices with EUV tool
Author(s): Kazuo Tawarayama; Yumi Nakajima; Suigen Kyoh; Hajime Aoyama; Kentaro Matsunaga; Shunko Magoshi; Satoshi Tanaka; Yumi Hayashi; Ichiro Mori
Show Abstract
Overlay progress in EUV lithography towards adoption for manufacturing
Author(s): Jan V. Hermans; David Laidler; Charles Pigneret; Andre van Dijk; Oleg Voznyi; Mircea Dusa; Eric Hendrickx
Show Abstract
Comparison between ADT and PPT for 2X DRAM patterning
Author(s): Sunyoung Koo; Jun-Taek Park; Yoonsuk Hyun; Keundo Ban; Seokkyun Kim; Chang-Moon Lim; Donggyu Yim; Sungki Park
Show Abstract
Shadowing effect modeling and compensation for EUV lithography
Author(s): Hua Song; Lena Zavyalova; Irene Su; James Shiely; Thomas Schmoeller
Show Abstract
Convergence study for lines, spaces between standard OPC, local, and more holistic OPC
Author(s): L. Perraud; Y. Trouiller; E. Yesilada; F. Robert; F. Foussadier; V. Farys; C. Gardin
Show Abstract
Particle qualification procedure for the TNO EUV reticle load port module of the HamaTech MaskTrackPro cleaning tool
Author(s): J. K. Stortelder; J. C. J. van der Donck; S. Oostrom; P. van der Walle; O. Brux; P. Dress
Show Abstract
EUVL dark-field exposure impact on CDs using thick and thin absorber masks
Author(s): Sang H. Lee; Todd R. Younkin; Michael J. Leeson; Manish Chandhok; Guojing Zhang; John Magana; Hiroyoshi Tanabe; Steve L. Carson
Show Abstract
Particle detection on flat surfaces
Author(s): Jacques van der Donck; Rob Snel; Jetske Stortelder; Alfred Abutan; Sjoerd Oostrom; Sander van Reek; Bert van der Zwan; Peter van der Walle
Show Abstract
Impact of mask line roughness in EUV lithography
Author(s): Alessandro Vaglio Pret; Roel Gronheid; Trey Graves; Mark D. Smith; John Biafore
Show Abstract
Evaluation results of a new EUV reticle pod having reticle grounding paths
Author(s): Kazuya Ota; Masami Yonekawa; Mitsuaki Amemiya; Takao Taguchi; Osamu Suga
Show Abstract
22X mask cleaning effects on EUV lithography process and lifetime
Author(s): Simi A. George; Robert J. Chen; Lorie-Mae Baclea-an; Patrick P. Naulleau
Show Abstract
Quantitative evaluation of mask phase defects from through-focus EUV aerial images
Author(s): Iacopo Mochi; Kenneth A. Goldberg; Ryan Xie; Pei-Yang Yan; Kenji Yamazoe
Show Abstract
Mask roughness induced LER: geometric model at long correlation lengths
Author(s): Brittany M. McClinton; Patrick P. Naulleau
Show Abstract
Mask roughness induced LER control and mitigation: aberrations sensitivity study and alternate illumination scheme
Author(s): Brittany M. McClinton; Patrick P. Naulleau
Show Abstract
Absorber height effects on SWA restrictions and shadow LER
Author(s): Brittany M. McClinton; Patrick P. Naulleau; Thomas Wallow
Show Abstract
Relationships between EUV resist outgassing and contamination deposition at Selete
Author(s): Hiroaki Oizumi; Kazuyuki Matsumaro; Satoshi Nomura; Julius Joseph Santillan; Toshiro Itani; Takeo Watanabe; Naohiro Matsuda; Tetsuo Harada; Hiroo Kinoshita
Show Abstract
Interaction of benzene and toluene vapors with Ru(0001) surface: relevance to MLM contamination
Author(s): B. V. Yakshinskiy; Q. Shen; R. A. Bartynski
Show Abstract
Dependence of contamination rates on key parameters in EUV optics
Author(s): Yashdeep Khopkar; Petros Thomas; Leonid Yankulin; Rashi Garg; Chimaobi Mbanaso; Alin Antohe; Mihir Upadhyaya; Vimal Kumar Kamineni; Yu-Jen Fan; Gregory Denbeaux; Vibhu Jindal; Andrea Wüest; Eric Gullikson
Show Abstract
Damage testing of EUV optics using focused radiation from a table-top LPP source
Author(s): K. Mann; F. Barkusky; A. Bayer; S. Döring
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Plasma-assisted cleaning by metastable-atom neutralization (PACMAN): a plasma approach to cleanliness in lithography
Author(s): W. M. Lytle; D. Andruczyk; V. Jindal; D. N. Ruzic
Show Abstract
Broadband spectrophotometry on nonplanar EUV multilayer optics
Author(s): I. Balasa; H. Blaschke; D. Ristau
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Development of an in-situ Sn cleaning method for extreme ultraviolet light lithography
Author(s): J. Sporre; R. E. Lofgren; D. N. Ruzic; O. V. Khodykin; D. W. Myers
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Application of flash-lamp post-exposure baking for EUV resist processing
Author(s): Koji Kaneyama; Toshiro Itani
Show Abstract
Availability of underlayer application to EUV process
Author(s): Hitoshi Kosugi; Carlos Fonseca; Fumiko Iwao; Hiroshi Marumoto; Hyun-Woo Kim; Kyoungyong Cho; Cheol-Hong Park; Chang-Min Park; Hai-Sub Na; Cha-Won Koh; Hanku Cho
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Development of under layer material for EUV lithography
Author(s): Rikimaru Sakamoto; Bang-Ching Ho; Noriaki Fujitani; Takafumi Endo; Ryuji Ohnishi
Show Abstract
Study of post-develop defect on typical EUV resist
Author(s): Masahiko Harumoto; Sadayasu Suyama; Tadashi Miyagi; Akihiko Morita; Masaya Asai; Koji Kaneyama; Toshiro Itani
Show Abstract
Study of ion implantation into EUV resist for LWR improvement
Author(s): Yukiko Kikuchi; Daisuke Kawamura; Hiroyuki Mizuno
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Development of EUV resist for 22nm half pitch and beyond
Author(s): Kouta Nishino; Ken Maruyama; Tooru Kimura; Toshiyuki Kai; Kentaro Goto; Shalini Sharma
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Mass spectrometer characterization of reactions in photoresists exposed to extreme ultraviolet radiation
Author(s): Chimaobi Mbanaso; Seth Kruger; Craig Higgins; Yashdeep Khopkar; Alin Antohe; Brian Cardineau; Gregory Denbeaux
Show Abstract
EUV lithography for 22nm half pitch and beyond: exploring resolution, LWR, and sensitivity tradeoffs
Author(s): E. Steve Putna; Todd R. Younkin; Michael Leeson; Roman Caudillo; Terence Bacuita; Uday Shah; Manish Chandhok
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Unraveling the effect of resist composition on EUV optics contamination
Author(s): I. Pollentier; I. Neira; A.-M. Goethals; R. Gronheid; S. Tarutani; H. Tamaoki; H. Tsubaki; T. Takahashi
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Acid proliferation to improve the sensitivity of EUV resists: a pulse radiolysis study
Author(s): Kazuyuki Enomoto; Koji Arimitsu; Atsutaro Yoshizawa; Hiroki Yamamoto; Akihiro Oshima; Takahiro Kozawa; Seiichi Tagawa
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Study of acid diffusion of anionic or cationic polymer bound PAG
Author(s): Jin Bong Shin; Hyun Sang Joo; Seung Duk Cho; Hyun Soon Lim; Jin Ho Kim; Seung Jae Lee; Dae Hyeon Shin; JoonHee Han; Dong Chul Seo
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Deep ultraviolet out-of-band contribution in extreme ultraviolet lithography: predictions and experiments
Author(s): Gian F. Lorusso; Natalia Davydova; Mark Eurlings; Cemil Kaya; Yue Peng; Kees Feenstra; Theodore H. Fedynyshyn; Oliver Natt; Peter Huber; Christoph Zaczek; Stuart Young; Paul Graeupner; Eric Hendrickx
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Understanding the behavior of laser-produced tin plasma by time-resolved spectroscopy and simulations of their spectra
Author(s): I. Kambali; T. McCormack; E. Scally; J. White; F. O'Reilly; P. Sheridan; G. D. O'Sullivan
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Counter-facing plasma focus system as an efficient and long-pulse EUV light source
Author(s): H. Kuwabara; K. Hayashi; Y. Kuroda; H. Nose; K. Hotozuka; M. Nakajima; K. Horioka
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Development of the reliable 20 kW class pulsed carbon dioxide laser system for LPP EUV light source
Author(s): Junichi Fujimoto; Takeshi Ohta; Krzysztof M. Nowak; Takashi Suganuma; Hidenobu Kameda; Masato Moriya; Toshio Yokoduka; Koji Fujitaka; Akira Sumitani; Hakaru Mizoguchi
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Characterization and optimization of tin particle mitigation and EUV conversion efficiency in a laser produced plasma EUV light source
Author(s): Tatsuya Yanagida; Hitoshi Nagano; Yasunori Wada; Takayuki Yabu; Shinji Nagai; Georg Soumagne; Tsukasa Hori; Kouji Kakizaki; Akira Sumitani; Junichi Fujimoto; Hakaru Mizoguchi; Akira Endo
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Development of debris-mitigation tool for HVM DPP source
Author(s): Hironobu Yabuta; Shinsuke Mori; Takahiro Inoue; Yusuke Teramoto; Hiroto Sato; Kazuaki Hotta
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Sn film and ignition control for performance enhancement of laser-triggered DPP source
Author(s): Yusuke Teramoto; Takuma Yokoyama; Hideyuki Urakami; Kazuaki Hotta
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Stable tin droplets for LPP EUV sources
Author(s): Bob Rollinger; Oran Morris; Reza S. Abhari
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EUV brightness, spot size, and contamination measurements at the intermediate focus
Author(s): Andrea Z. Giovannini; Oran Morris; Ian Henderson; Samir Ellwi; Reza S. Abhari
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Improvements in the EQ-10 electrodeless Z-pinch EUV source for metrology applications
Author(s): Stephen F. Horne; Deborah Gustafson; Matthew J. Partlow; Matthew M. Besen; Donald K. Smith; Paul A. Blackborow
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Investigation on the interaction of long duration Nd:YAG laser pulse with Sn plasma for an EUV metrology source
Author(s): Y. Tao; Y. Ueno; S. Yuspeh; R. Burdt; M. S. Tillack; F. Najmabadi
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Next generation of Z* modelling tool for high intensity EUV and soft x-ray plasma sources simulations
Author(s): S. V. Zakharov; V. S. Zakharov; P. Choi; A. Y. Krukovskiy; V. G. Novikov; A. D. Solomyannaya; A. V. Berezin; A. S. Vorontsov; M. B. Markov; S. V. Parot'kin
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Laser produced plasma light source for EUVL
Author(s): Igor V. Fomenkov; Alex I. Ershov; William N. Partlo; David W. Myers; Daniel Brown; Richard L. Sandstrom; Bruno La Fontaine; Alexander N. Bykanov; Georgiy O. Vaschenko; Oleh V. Khodykin; Norbert R. Böwering; Palash Das; Vladimir B. Fleurov; Kevin Zhang; Shailendra N. Srivastava; Imtiaz Ahmad; Chirag Rajyaguru; Silvia De Dea; Richard R. Hou; Wayne J. Dunstan; Peter Baumgart; Toshihiko Ishihara; Rod D. Simmons; Robert N. Jacques; Robert A. Bergstedt; David C. Brandt
Show Abstract
Overlay accuracy of EUV1 using compensation method for nonflatness of mask
Author(s): Yuusuke Tanaka; Takashi Kamo; Kazuya Ota; Hiroyuki Tanaka; Osamu Suga; Masamitsu Itoh; Shusuke Yoshitake
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EUV processing investigation on state of the art coater/developer system
Author(s): H. Shite; N. Bradon; T. Shimoaoki; S. Kobayashi; K. Nafus; H. Kosugi; P. Foubert; J. Hermans; E. Hendrickx; M. Goethals; R. Gronheid; C. Jehoul
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Low-speckle holographic beam shaping of high-coherence EUV sources
Author(s): Christopher N. Anderson; Ryan H. Miyakawa; Patrick P. Naulleau
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Lateral shearing interferometry for high-resolution EUV optical testing
Author(s): Ryan Miyakawa; Patrick Naulleau
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On the extensibility of extreme UV lithography
Author(s): Shinn-Sheng Yu; Anthony Yen; Shu-Hao Chang; Chih-T'sung Shih; Yen-Cheng Lu; Jimmy Hu; Timothy Wu
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EUVL alternating phase shift mask
Author(s): Pei-Yang Yan; Alan Myers; Yashesh Shroff; Manish Chandhok; Guojing Zhang; Eric Gullikson; Farhad Salmassi
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Efficient specification and characterization of surface roughness for extreme ultraviolet optics
Author(s): Sven Schröder; Marcus Trost; Torsten Feigl; James E. Harvey; Angela Duparré
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High-brightness EUV light source for HVM
Author(s): Peter Choi; Sergey V. Zakharov; Raul Aliaga-Rossel; Aldrice Bakouboula; Jeremy Bastide; Otman Benali; Philippe Bove; Michèle Cau; Grainne Duffy; Carlo Fanara; Wafa Kezzar; Blair Lebert; Keith Powell; Ouassima Sarroukh; Luc Tantart; Clement Zaepffel; Vasily S. Zakharov
Show Abstract
Considerations for cost of ownership in EUV lithography
Author(s): Anthony Keen; Christopher Bailey; Jos Donders; Neil Condon
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