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PROCEEDINGS VOLUME 7939

Gallium Nitride Materials and Devices VI
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Volume Details

Volume Number: 7939
Date Published: 18 February 2011
Softcover: 52 papers (426) pages
ISBN: 9780819484765

Table of Contents
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Front Matter: Volume 7939
Author(s): Proceedings of SPIE
Growth of bulk GaN crystal by Na flux method
Author(s): M. Imade; N. Miyoshi; M. Yoshimura; Y. Kitaoka; T. Sasaki; Y. Mori
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Cathodoluminescence spectroscopy on selectively grown GaN nanowires
Author(s): T. Schumann; T. Gotschke; F. Limbach; T. Stoica; R. Calarco
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Growth and fabrication of InN-based III-nitride device structure using droplet elimination process by radical beam irradiation
Author(s): Tomohiro Yamaguchi; Tsutomu Araki; Yasushi Nanishi
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Cathodoluminescence characteristics of linearly shaped staggered InGaN quantum wells light-emitting diodes
Author(s): Hongping Zhao; Jing Zhang; Guangyu Liu; Takahiro Toma; Jonathan D. Poplawsky; Volkmar Dierolf; Nelson Tansu
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Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates
Author(s): Bo Monemar; Plamen Paskov; Galia Pozina; Carl Hemmingsson; Peder Bergman; David Lindgren; Lars Samuelson; Xianfeng Ni; Hadis Morkoç; Tanya Paskova; Zhaoxia Bi; Jonas Ohlsson
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Kelvin probe measurements of p-type GaN
Author(s): M. Foussekis; X. Ni; H. Morkoç; M. A. Reshchikov; A. A. Baski
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Fermi level effect on strain of Si-doped GaN
Author(s): Jinqiao Xie; Seiji Mita; Ramón Collazo; Anthony Rice; James Tweedie; Zlatko Sitar
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The role of fluorine ions in GaN heterojunction transistors: applications and stability
Author(s): Kevin J. Chen
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Effect of substrate offcut on AlGaN/GaN HFET structures on bulk GaN substrates
Author(s): J. H. Leach; N. Biswas; T. Paskova; E. A. Preble; K. R. Evans; M. Wu; X. Ni; X. Li; Ü. Özgür; H. Morkoç
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New factors affecting HFET stability, 1/f noise, and reliability
Author(s): Peter H. Handel; Hadis Morkoç
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Point defects in GaN and related group-III nitrides studied by means of positron annihilation
Author(s): Akira Uedono; Shoji Ishibashi; Shigefusa F. Chichibu; Katsuhiro Akimoto
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Role of In-segregation in anomalously large band-gap bowings of (In,Al,Ga)N
Author(s): I. Gorczyca; T. Suski; N. E. Christensen; A. Svane
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Bowing of biexciton binding in AlxGa1-xN ternary alloys
Author(s): Yoichi Yamada
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Inhomogeneous carrier distribution in InGaN multiple quantum wells and its influences on device performances
Author(s): Han-Youl Ryu; Jong-In Shim
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Thermoelectric properties of MOCVD-grown AlInN alloys with various compositions
Author(s): Jing Zhang; Hua Tong; Guangyu Liu; Juan A. Herbsommer; G. S. Huang; Nelson Tansu
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Hydrogen etch of GaN and its application to produce porous GaN caves
Author(s): Yen-Hsien Yeh; Ying-Chia Hsu; Yin-Hao Wu; Kuei-Ming Chen; Wei-I Lee
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Plasmonic effects in In(Ga)N
Author(s): Sergey V. Ivanov; Tatiana V. Shubina; Alexey A. Toropov
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Recent developments in AlGaN-based laser diodes for short ultraviolet region
Author(s): Harumasa Yoshida; Masakazu Kuwabara; Yoji Yamashita; Kazuya Uchiyama; Hirofumi Kan
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Recent results on the physical origin of the degradation of GaN-based LEDs and lasers
Author(s): M. Meneghini; N. Trivellin; G. Meneghesso; K. Orita; S. Takigawa; T. Tanaka; D. Ueda; E. Zanoni
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High-performance blue and green laser diodes based on nonpolar/semipolar bulk GaN substrates
Author(s): James W. Raring; Mathew C. Schmidt; Christiane Poblenz; Ben Li; Yu-Chia Chang; Mark J. Mondry; You-Da Lin; Michael R. Krames; Richard Craig; James S. Speck; Steven P. DenBaars; Shuji Nakamura
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The development of monolithic alternating current light-emitting diode
Author(s): Wen-Yung Yeh; Hsi-Hsuan Yen; Yi-Jen Chan
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Etching formation of GaN micro optoelectronic device array
Author(s): Qian Fan; Frank Lee; Kameshwar Yadavalli; Michael S. Lee; Chih-Li Chuang; Hussein El-Ghoroury
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Unified model for the GaN LED efficiency droop
Author(s): Joachim Piprek
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Impact of ballistic electron transport on efficiency of InGaN based LEDs
Author(s): F. Zhang; X. Li; S. Liu; S. Okur; V. Avrutin; Ü. Özgür; H. Morkoç; A. Matulionis; M. Kisin
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InAlGaN optical emitters: laser diodes with non-epitaxial cladding layers and ultraviolet light-emitting diodes
Author(s): Christopher Chua; Zhihong Yang; Clifford Knollenberg; Mark Teepe; Bowen Cheng; Andre Strittmatter; David Bour; Noble M. Johnson
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Properties of TCO anodes deposited by APCVD and their applications to OLEDs
Author(s): R. Y. Korotkov; P. Ricou; L. Fang; J. Coffey; G. Silverman; M. Ruske; H. Schwab; A. B. Padmaperuma; D. J. Gaspar
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An efficiency droop model of the saturated radiative recombination rate and its verification by radiative and nonradiative carrier lifetime measurements in InGaN-based light emitting diodes
Author(s): Jong-In Shim; Hyunsung Kim; Dong-Soo Shin; Han-Youl Ryu
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Modeling of III-nitride light-emitting diodes: progress, problems, and perspectives
Author(s): Sergey Yu. Karpov
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Enhancement of external quantum efficiency in GaN based LEDs
Author(s): Jun Ho Son; Jong-Lam Lee
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Vertical composition variation in nominally uniform InGaN layers revealed by aberration-corrected STEM imaging
Author(s): A. B. Yankovich; A. V. Kvit; X. Li; F. Zhang; V. Avrutin; H. Y. Liu; N. Izyumskaya; Ü. Özgür; H. Morkoç; P. M. Voyles
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Optical polarization of UV-A and UV-B (In)(Al)GaN multiple quantum well light-emitting diodes
Author(s): Tim Kolbe; Arne Knauer; Joachim Stellmach; Chris Chua; Zhihong Yang; Sven Einfeldt; Patrick Vogt; Noble M. Johnson; Markus Weyers; Michael Kneissl
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Characteristics of InGaN/sapphire-based photovoltaic devices with different superlattice absorption layers and buffer layers
Author(s): Chih-Ciao Yang; Jinn-Kong Sheu; Min-Shun Huang; Shang-Ju Tu; Feng-Wen Huang; Kuo-Hua Chang; Ming-Lun Lee; Wei-Chih Lai
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Two-dimensional drift-diffusion simulation of GaN HFETs
Author(s): Qian Fan; Hadis Morkoç
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Heterostructure designs for enhanced performance and reliability in GaN HFETs: camelback channels
Author(s): J. H. Leach; M. Wu; H. Morkoç; M. Ramonas; A. Matulionis
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1/f Noise in Schottky diodes
Author(s): Peter H. Handel; Hadis Morkoç
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Fabrication and lasing characteristics of GaN nanopillars
Author(s): Ming-Hua Lo; Yuh-Jen Cheng; Hao-Chung Kuo; Shing-Chung Wang
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Fabrication of high-efficiency LED using moth-eye structure
Author(s): H. Sakurai; T. Kondo; A. Suzuki; T. Kitano; M. Mori; M. Iwaya; T. Takeuchi; S. Kamiyama; I. Akasaki
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Optical properties of nonpolar (1-100) and semipolar (1-101)GaN grown by MOCVD on Si patterned substrates
Author(s): N. Izyumskaya; S. J. Liu; S. Okur; M. Wu; V. Avrutin; Ü. Özgür; S. Metzner; F. Bertram; J. Christen; L. Zhou; D. J. Smith; H. Morkoç
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Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate
Author(s): Ching-Hsueh Chiu; Da-Wei Lin; Zhen-Yu Li; Shih-Chun Ling; Hao-Chung Kuo; Tien-Chang Lu; Shing-Chung Wang; Wei-Tasi Liao; Tomoyuki Tanikawa; Yoshio Honda; Masahito Yamaguchi; Nobuhiko Sawaki
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Enhancement in light extraction efficiency of GaN-based vertical light-emitting diodes by AgCu-based reflectors
Author(s): Tak Jeong; Seung Whan Kim; Jong Hyeob Baek
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Deep inductively coupled plasma etching of ELO-GaN grown with high fill factor
Author(s): Haiyong Gao; Jaesoong Lee; Xianfeng Ni; Jacob Leach; Ümit Özgür; Hadis Morkoç
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Enhanced hydrogen gas generation rate by n-GaN photoelectrode with immersed finger-type indium tin oxide ohmic contacts
Author(s): Shu-Yen Liu; Jhao-Cheng Ye; Yu-Chuan Lin; Kuo-Hua Chang; Ming-Lun Lee; Wei-Chih Lai; Jinn-Kong Sheu
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High modal gain in Ga(NAsP)/(BGa)((As)P) heterostructures grown lattice matched on (001) silicon
Author(s): N. Koukourakis; D. A. Funke; N. C. Gerhardt; M. R. Hofmann; S. Liebich; C. Bückers; S. Zinnkann; M. Zimprich; A. Beyer; S. Chatterjee; S. W. Koch; B. Kunert; K. Volz; W. Stolz
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Growth of GaN single crystals by a Ca- and Ba-added Na flux method
Author(s): H. Ukegawa; Y. Konishi; T. Fujimori; N. Miyoshi; M. Imade; M. Yoshimura; Y. Kitaoka; T. Sasaki; Y. Mori
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Measurement of nonuniform bowing in GaN/sapphire epi-wafers and subsequent stress analysis by using a theoretical model
Author(s): Yuseong Jang; Dong-Hyun Jang; Jong-In Shim; Dong-Soo Shin
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Direct observation of lattice constant variations depending on layer structures in an InGaN/GaN MQW LED
Author(s): Shigeya Kimura; Koichi Tachibana; Toshiyuki Oka; Hajime Nago; Hisashi Yoshida; Shinya Nunoue
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Optimization of ZnO:Ga properties for application as a transparent conducting oxide in InGaN-based light-emitting diodes
Author(s): H. Y. Liu; X. Li; S. Liu; X. Ni; V. Avrutin; N. Izyumskaya; Ü. Özgür; A. B. Yankovich; A. V. Kvit; P. M. Voyles; M. A. Reshchikov; H. Morkoç
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Low-frequency noise measurements of generation-recombination effect and field-assisted emission in AlGaN/GaN MOSHFETs and HFETs
Author(s): Cemil Kayis; Jacob H. Leach; C. Y. Zhu; Mo Wu; X. Li; X. Yang; Veena Misra; Peter H. Handel; Ü. Özgür; H. Morkoç
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Low-frequency noise measurements of electrical stress in InAlN/GaN and AlGaN/GaN heterostructure field-effect transistors
Author(s): Cemil Kayis; C. Y. Zhu; Mo Wu; Xing Li; Ümit Özgür; Hadis Morkoç
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Growth of crack-free semi-polar (1-101) GaN on a 7°-off (001) Si substrate by metal-organic chemical vapor deposition
Author(s): Hsien-Yu Lin; Hsueh-Hsing Liu; Chen-Zi Liao; Jen-Inn Chyi
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Electrical properties of In-doped ZnO films grown by plasma-assisted molecular beam epitaxy on GaN(0001) template
Author(s): Cheng-Yu Chen; Li-Han Siao; Jen-Inn Chyi; Chih-Kang Chao; Chih-Hung Wu
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Current spreading effect in vertical GaN/InGaN LEDs
Author(s): Chi-Kang Li; Yuh-Renn Wu
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