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Proceedings of SPIE Volume 7640

Optical Microlithography XXIII
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Volume Details

Volume Number: 7640
Date Published: 3 March 2010
Softcover: 116 papers (1218) pages
ISBN: 9780819480545

Table of Contents
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Front Matter: Volume 7640
Author(s): Proceedings of SPIE
Shaping the future of nanoelectronics beyond the Si roadmap with new materials and devices
Author(s): Marc Heyns; Florence Bellenger; Guy Brammertz; Matty Caymax; Mirco Cantoro; Stefan De Gendt; Brice De Jaeger; Annelies Delabie; Geert Eneman; Guido Groeseneken; Geert Hellings; Michel Houssa; Francesca Iacopi; Daniele Leonelli; Dennis Lin; Wim Magnus; Koen Martens; Clement Merckling; Marc Meuris; Jerome Mitard; Julien Penaud; Geoffrey Pourtois; Marc Scarrozza; Eddy R. Simoen; Bart Soree; Sven Van Elshocht; William Vandenberghe; Anne Vandooren; Philippe Vereecke; Anne Verhulst; Wei-E Wang
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Generation of arbitrary freeform source shapes using advanced illumination systems in high-NA immersion scanners
Author(s): Jörg Zimmermann; Paul Gräupner; Jens Timo Neumann; Dirk Hellweg; Dirk Jürgens; Michael Patra; Christoph Hennerkes; Manfred Maul; Bernd Geh; Andre Engelen; Oscar Noordman; Melchior Mulder; Sean Park; Joep De Vocht
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Demonstrating the benefits of source-mask optimization and enabling technologies through experiment and simulations
Author(s): David Melville; Alan E. Rosenbluth; Kehan Tian; Kafai Lai; Saeed Bagheri; Jaione Tirapu-Azpiroz; Jason Meiring; Scott Halle; Greg McIntyre; Tom Faure; Daniel Corliss; Azalia Krasnoperova; Lei Zhuang; Phil Strenski; Andreas Waechter; Laszlo Ladanyi; Francisco Barahona; Daniele Scarpazza; Jon Lee; Tadanobu Inoue; Masaharu Sakamoto; Hidemasa Muta; Alfred Wagner; Geoffrey Burr; Young Kim; Emily Gallagher; Mike Hibbs; Alexander Tritchkov; Yuri Granik; Moutaz Fakhry; Kostas Adam; Gabriel Berger; Michael Lam; Aasutosh Dave; Nick Cobb
Show Abstract
Tolerancing analysis of customized illumination for practical applications of source and mask optimization
Author(s): Tomoyuki Matsuyama; Naonori Kita; Toshiharu Nakashima; Osamu Tanitsu; Soichi Owa
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Freeform illumination sources: an experimental study of source-mask optimization for 22-nm SRAM cells
Author(s): J. Bekaert; B. Laenens; S. Verhaegen; L. Van Look; D. Trivkovic; F. Lazzarino; G. Vandenberghe; P. van Adrichem; R. Socha; S. Baron; M. C. Tsai; K. Ning; S. Hsu; H. Y. Liu; M. Mulder; A. Bouma; E. van der Heijden; O. Mouraille; K. Schreel; J. Finders; M. Dusa; J. Zimmermann; P. Gräupner; J. T. Neumann; C. Hennerkes
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Evaluation of double-patterning techniques for advanced logic nodes
Author(s): Chiew-Seng Koay; Steven Holmes; Karen Petrillo; Matthew Colburn; Sean Burns; Shannon Dunn; Jason Cantone; David Hetzer; Shinichiro Kawakami; Youri van Dommelen; Aiqin Jiang; Michael Many; Robert Routh; Lior Huli; Brian Martinick; Martin Rodgers; Hideyuki Tomizawa; Sumanth Kini
Show Abstract
Actual performance data analysis of overlay, focus, and dose control of an immersion scanner for double patterning
Author(s): Shinji Wakamoto; Yuho Kanaya; Junichi Kosugi; Noriaki Kasai; Hisashi Nishinaga; Kenichi Shiraishi; Yosuke Shirata; Yuuki Ishii
Show Abstract
Modeling of double patterning interactions in litho-cure-litho-etch (LCLE) processes
Author(s): Andreas Erdmann; Feng Shao; Juergen Fuhrmann; Andre Fiebach; George P. Patsis; Peter Trefonas
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Litho and patterning challenges for memory and logic applications at the 22-nm node
Author(s): Jo Finders; Mircea Dusa; Peter Nikolsky; Youri van Dommelen; Robert Watso; Tom Vandeweyer; Joost Beckaert; Bart Laenens; Lieve Van Look
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Comparative study of resolution limits for double patterning and EUV processes for the 32nm contact hole case
Author(s): Itaru Kamohara; Keiichi Tajima; Thomas Schmoeller
Show Abstract
Advances in dual-tone development for pitch frequency doubling
Author(s): Carlos Fonseca; Mark Somervell; Steven Scheer; Yuhei Kuwahara; Kathleen Nafus; Roel Gronheid; Shinji Tarutani; Yuuichiro Enomoto
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Spacer defined double patterning for sub-72 nm pitch logic technology
Author(s): Ryoung-Han Kim; Erin Mclellan; Yunpeng Yin; John Arnold; Sivananda Kanakasabapathy; Sanjay Mehta; Yuansheng Ma; Martin Burkhardt; Jason Cain; Greg McIntyre; Matthew E. Colburn; Harry J. Levinson
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The impact of optical non-idealities in litho-litho-etch processing
Author(s): Stewart A. Robertson; Michael T. Reilly; Trey Graves; Mark D. Smith; John J. Biafore
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Double patterning lithography study with high overlay accuracy
Author(s): Takahisa Kikuchi; Yosuke Shirata; Masahiko Yasuda; Yasuhiro Iriuchijima; Kengo Takemasa; Ryo Tanaka; Andrew Hazelton; Yuuki Ishii
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Litho-process-litho for 2D 32nm hp Logic and DRAM double patterning
Author(s): Patrick Wong; Vincent Wiaux; Staf Verhaegen; Nadia Vandenbroeck
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Modeling of exploration of reversible contrast enhancement layers for double exposure lithography
Author(s): Feng Shao; Gregory D. Cooper; Zhiyun Chen; Andreas Erdmann
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Improving aberration control with application specific optimization using computational lithography
Author(s): Jianming Zhou; Youping Zhang; Peter Engblom; Mike Hyatt; Eric Wu; Martin Snajdr; Anton deVilliers; Yuan He; Craig Hickman; Peng Liu; Dennis de Lang; Bernd Geh; Erik Byers; Scott Light
Show Abstract
Evaluation of lithographic benefits of using ILT techniques for 22nm-node
Author(s): Yi Zou; Yunfei Deng; Jongwook Kye; Luigi Capodieci; Cyrus Tabery; Thuc Dam; Anthony Aadamov; Ki-Ho Baik; Linyong Pang; Bob Gleason
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A computational method for optimal application specific lens control in microlithography
Author(s): Peng Liu; Martin Snajdr; Zhengfan Zhang; Yu Cao; Jun Ye; Youping Zhang
Show Abstract
Aerial image calculation by eigenvalues and eigenfunctions of a matrix that includes source, pupil, and mask
Author(s): Kenji Yamazoe; Andrew R. Neureuther
Show Abstract
Optimization from design rules, source and mask, to full chip with a single computational lithography framework: level-set-methods-based inverse lithography technology (ILT)
Author(s): Linyong Pang; Danping Peng; Peter Hu; Dongxue Chen; Tom Cecil; Lin He; Guangming Xiao; Vikram Tolani; Thuc Dam; Ki-Ho Baik; Bob Gleason
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Quadratic blur kernels for latent image formation modeling
Author(s): Anatoly Burov
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In-situ Mueller matrix polarimetry of projection lenses for 193-nm lithography
Author(s): Hiroshi Nomura; Iwao Higashikawa
Show Abstract
Experimental result of polarization characteristics separation method
Author(s): Toru Fujii; Kosuke Suzuki; Jun Kogo; Kiyoshi Toyama; Kunihisa Sasada; Masayasu Sawada
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Implementing and validating double patterning in 22-nm to 16-nm product design and patterning flows
Author(s): Myung-Soo Noh; Beom-Seok Seo; Suk-Joo Lee; Alex Miloslavsky; Christopher Cork; Levi Barnes; Kevin Lucas
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Comparative study of line width roughness (LWR) in next-generation lithography (NGL) processes
Author(s): Kedar Patel; Thomas Wallow; Harry J. Levinson; Costas J. Spanos
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Toward perfect on-wafer pattern placement: stitched overlay exposure tool characterization
Author(s): Christopher P. Ausschnitt; Timothy A. Brunner; Nelson M. Felix; Blandine Minghetti
Show Abstract
Impact of scanner signatures on optical proximity correction
Author(s): Jacek K. Tyminski; Tomoyuki Matsuyama; Yen-Liang Lu; Jun-Cheng Lai; Kao-Tun Chen; Yung-Ching Mai; Irene Su; George Bailey
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Overlay characterization and matching of immersion photoclusters
Author(s): Blandine Minghetti; Timothy Brunner; Christopher Robinson; Christopher Ausschnitt; Dan Corliss; Nelson Felix
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Topcoat-less resist approach for high volume production and yield enhancement of immersion lithography
Author(s): Katsushi Nakano; Rei Seki; Tadamasa Kawakubo; Yoshihiro Maruta; Toshiyuki Sekito; Kenichi Shiraishi; Toshihiko Sei; Tomoharu Fujiwara; Tsunehito Hayashi; Yasuhiro Iriuchijima; Soichi Owa
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Analysis of the impact of pupil shape variation by pupil fit modeling
Author(s): Jin-hyuck Jeon; Chan-ha Park; Hyun-jo Yang; Cheol-kyun Kim; Jin-young Choi; Sang-jin Oh; Dong-gyu Yim; Sung-ki Park; Ki-yeop Park; Young-hong Min; Andre Engelen; Bart Smeets; Joerg Zimmermann
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Predicting and reducing substrate induced focus error
Author(s): Bernhard Liegl; Brian Sapp; Kia Low; Stephen Greco; Timothy Brunner; Nelson Felix; Ian Stobert; Kourosh Nafisi; Chandrasekhar Sarma
Show Abstract
Lithographic scanner stability improvements through advanced metrology and control
Author(s): Peter Vanoppen; Thomas Theeuwes; Henry Megens; Hugo Cramer; Timon Fliervoet; Martin Ebert; Danu Satriasaputra
Show Abstract
Experimental study of effect of pellicle on optical proximity fingerprint for 1.35 NA immersion ArF lithography
Author(s): Lieve Van Look; Joost Bekaert; Bart Laenens; Geert Vandenberghe; Jan Richter; Karsten Bubke; Jan Hendrik Peters; Koen Schreel; Mircea Dusa
Show Abstract
Simulation-based pattern matching using scanner metrology and design data to reduce reliance on CD metrology
Author(s): Yuan He; Erik Byers; Scott Light; Danielle Hines; Anton Devilliers; Mike Hyatt; Jianming Zhou; Vinay Nair; Zongchang Yu; Yu Cao; Xu Xie; Wenjin Shao; Rafael Aldana; Ronald Goossens; Chang-Qun Ma; Junwei Lu; Hua-yu Liu; Chris Aquino; Peter Engblom; Tjitte Nooitgedagt; Eric Janda
Show Abstract
The GridMapper challenge: how to integrate into manufacturing for reduced overlay error
Author(s): Allen Gabor; Bernhard Liegl; Michael Pike; Emily Hwang; Timothy Wiltshire
Show Abstract
Simultaneous optimization of dose and focus controls in advanced ArF immersion scanners
Author(s): Tsuyoshi Toki; Pavel Izikson; Junichi Kosugi; Naruo Sakasai; Keiko Saotome; Kazuaki Suzuki; Daniel Kandel; John C. Robinson; Yuji Koyanagi
Show Abstract
Novel fine-tuned model-based SRAF generation method using coherence map
Author(s): Katsuyoshi Kodera; Satoshi Tanaka; Mikiyasu Yamaji; Chikaaki Kodama; Toshiya Kotani; Shigeki Nojima; Koji Hashimoto; Shoji Mimotogi; Soichi Inoue
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Ultimately accurate SRAF replacement for practical phases using an adaptive search algorithm based on the optimal gradient method
Author(s): Shimon Maeda; Hirokazu Nosato; Tetsuaki Matsunawa; Masahiro Miyairi; Shigeki Nojima; Satoshi Tanaka; Hidenori Sakanashi; Masahiro Murakawa; Tamaki Saito; Tetsuya Higuchi; Soichi Inoue
Show Abstract
22nm logic lithography in the presence of local interconnect
Author(s): Michael C. Smayling; Robert J. Socha; Mircea V. Dusa
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Lithography and layout co-optimization beyond conventional OPC concept
Author(s): Koichiro Tsujita; Koji Mikami; Hiroyuki Ishii; Tadashi Arai; Kazuhiro Takahashi
Show Abstract
Mask enhancer technology for sub-100nm pitch random logic layout contact hole fabrication
Author(s): Takashi Yuito; Hiroshi Sakaue; Takashi Matsuda; Tadami Shimizu; Shigeo Irie; Fumio Iwamoto; Akio Misaka; Taichi Koizumi; Masaru Sasago
Show Abstract
Suppressing ringing effects from very strong off-axis illumination with novel OPC approaches for low k1 lithography
Author(s): Chris Cork; Frank Amoroso; Amyn Poonawala; Stephen Jang; Kevin Lucas
Show Abstract
Three-dimensional physical photoresist model calibration and profile-based pattern verification
Author(s): Mohamed Talbi; Amr Y. Abdo; Todd C. Bailey; Will Conley; Derren N. Dunn; Masashi Fujimoto; John Nickel; No Young Chung; Sajan Marokkey; Si Hyeung Lee; Chandrasekhar Sarma; Dongbing Shao; Ramya Viswanathan
Show Abstract
The feasibility of using image parameters for test pattern selection during OPC model calibration
Author(s): Amr Abdo; Ramya Viswanathan
Show Abstract
Optical proximity correction enhancement by using model based fragmentation approaches
Author(s): Young-Seok Woo; Woon-Hyuk Choi; Beom-Seok Seo; Yoo-Hyon Kim; Vladislav Liubich; Shady Abdelwahed; Juhwan Kim; James Word; Jong-Won Lee
Show Abstract
Automation of sample plan creation for process model calibration
Author(s): James Oberschmidt; Amr Abdo; Tamer Desouky; Mohamed Al-Imam; Azalia Krasnoperova; Ramya Viswanathan
Show Abstract
SMO for 28-nm logic device and beyond: impact of source and mask complexity on lithography performance
Author(s): Seiji Nagahara; Kazuyuki Yoshimochi; Hiroshi Yamazaki; Kazuhiro Takeda; Takayuki Uchiyama; Stephen Hsu; Zhipan Li; Hua-yu Liu; Keith Gronlund; Terunobu Kurosawa; Jun Ye; Luoqi Chen; Hong Chen; Zheng Li; Xiaofeng Liu; Wei Liu
Show Abstract
Illumination optics for source-mask optimization
Author(s): Yasushi Mizuno; Tomoyuki Matsuyama; Soichi Owa; Osamu Tanitsu; Naonori Kita; Masahiko Okumura
Show Abstract
Considerations in source-mask optimization for logic applications
Author(s): Yunfei Deng; Yi Zou; Kenji Yoshimoto; Yuansheng Ma; Cyrus E. Tabery; Jongwook Kye; Luigi Capodieci; Harry J. Levinson
Show Abstract
Challenges for low-k1 lithography in logic devices by source mask co-optimization
Author(s): Kazuyuki Yoshimochi; Seiji Nagahara; Kazuhiro Takeda; Takayuki Uchiyama
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A GPU-based full-chip source-mask optimization solution
Author(s): Ilhami Torunoglu; Erich Elsen; Ahmet Karakas
Show Abstract
Source mask optimization for advanced lithography nodes
Author(s): Amyn Poonawala; William Stanton; Chander Sawh
Show Abstract
Towards ultimate optical lithography with NXT:1950i dual stage immersion platform
Author(s): Tom Castenmiller; Frank van de Mast; Toine de Kort; Coen van de Vin; Marten de Wit; Raf Stegen; Stefan van Cleef
Show Abstract
Latest performance of immersion scanner S620D with the Streamlign platform for the double patterning generation
Author(s): Hirotaka Kohno; Yuichi Shibazaki; Jun Ishikawa; Junichi Kosugi; Yasuhiro Iriuchijima; Masato Hamatani
Show Abstract
Performance of FlexRay: a fully programmable illumination system for generation of freeform sources on high NA immersion systems
Author(s): Melchior Mulder; André Engelen; Oscar Noordman; Gert Streutker; Bert van Drieenhuizen; Cas van Nuenen; Wilfred Endendijk; Jef Verbeeck; Wim Bouman; Anita Bouma; Robert Kazinczi; Robert Socha; Dirk Jürgens; Joerg Zimmermann; Bastian Trauter; Joost Bekaert; Bart Laenens; Daniel Corliss; Greg McIntyre
Show Abstract
High reliability ArF light source for double patterning immersion lithography
Author(s): Rostislav Rokitski; Toshi Ishihara; Rajeskar Rao; Rui Jiang; Mary Haviland; Theodore Cacouris; Daniel Brown
Show Abstract
Advanced imaging with 1.35 NA immersion systems for volume production
Author(s): Igor Bouchoms; Jan Mulkens; Sander de Putter; Pieter Gunter; Roelof de Graaf; Marcel Beems; Erwin Verdurmen; Hans Jasper; Nils Dieckmann; Frank Bornebroek
Show Abstract
The impact of resist model on mask 3D simulation accuracy beyond 40nm node memory patterns
Author(s): Kao-Tun Chen; Shin-Shing Yeh; Ya-Hsuan Hsieh; Jun-Cheng Nelson Lai; Stewart A. Robertson; John J. Biafore; Sanjay Kapasi; Arthur Lin
Show Abstract
Comparison of OPC models with and without 3D-mask effect
Author(s): Jung-Hoon Ser; Tae-Hoon Park; Moon-Gyu Jeong; Eun-Mi Lee; Sung-Woo Lee; Chun-Suk Suh; Seong-Woon Choi; Chan-Hoon Park; Joo-Tae Moon
Show Abstract
Virtual fab flow for wafer topography aware OPC
Author(s): Hans-Jürgen Stock; Lars Bomholt; Dietmar Krüger; James Shiely; Hua Song; Nikolay Voznesenskiy
Show Abstract
Interlayer self-aligning process for 22nm logic
Author(s): Michael C. Smayling; Stewart Robertson; Damian Lacey; Sanjay Kapasi
Show Abstract
Process window and integration results for full-chip model-based assist-feature placement at the 32 nm node and below
Author(s): Ji Li; Gerard Luk-Pat; Amyn Poonawala; Kevin Lucas; Ben Painter
Show Abstract
The role of mask topography effects in the optimization of pixelated sources
Author(s): Vitaliy Domnenko; Bernd Küchler; Thomas Mülders; Thomas Schmöller; Hans-Jürgen Stock; Georg Viehöver
Show Abstract
Printing the metal and contact layers for the 32- and 22-nm node: comparing positive and negative tone development process
Author(s): L. Van Look; J. Bekaert; V. Truffert; V. Wiaux; F. Lazzarino; M. Maenhoudt; G. Vandenberghe; Mario Reybrouck; Shinji Tarutani
Show Abstract
Achieving interferometric double patterning through wafer rotation
Author(s): Peng Xie; Neal V. Lafferty; Bruce W. Smith
Show Abstract
Novel ATHENA mark design to enhance alignment quality in double patterning with spacer process
Author(s): L. W. Chen; Mars Yang; Elvis Yang; T. H. Yang; K. C. Chen; Chih-Yuan Lu
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Modeling of CD and placement error in multi-spacer patterning technology
Author(s): S. Babin; K. Bay
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LENS (lithography enhancement toward nano scale): a European project to support double exposure and double patterning technology development
Author(s): Pietro Cantu; Livio Baldi; Paolo Piacentini; Joost Sytsma; Bertrand Le Gratiet; Stéphanie Gaugiran; Patrick Wong; Hiroyuki Miyashita; Luisa Rita Atzei; Xavier Buch; Dick Verkleij; Olivier Toublan; Francesco Perez-Murano; David Mecerreyes
Show Abstract
Novel continuously shaped diffractive optical elements enable high efficiency beam shaping
Author(s): Yuri V. Miklyaev; Waleri Imgrunt; Vladimir S. Pavelyev; Denis G. Kachalov; Tanja Bizjak; Lutz Aschke; Vitalij N. Lissotschenko
Show Abstract
Advances in DOE modeling and optical performance for SMO applications
Author(s): James Carriere; Jared Stack; John Childers; Kevin Welch; Marc D. Himel
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Abbe-PCA-SMO: microlithography source and mask optimization based on Abbe-PCA
Author(s): Jason Hsih-Chie Chang; Charlie Chung-Ping Chen; Lawrence S. Melvin
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Optimization on illumination source with design of experiments
Author(s): Helen Hu; Yi Zou; Yunfei Deng
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Source-mask optimization (SMO): from theory to practice
Author(s): Thuc Dam; Vikram Tolani; Peter Hu; Ki-Ho Baik; Linyong Pang; Bob Gleason; Steven D. Slonaker; Jacek K. Tyminski
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Partial spatial coherence in an excimer-laser lithographic imaging system
Author(s): Arlene Smith; Anna Burvall; Christopher Dainty
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Flexible and reliable high power injection locked laser for double exposure and double patterning ArF immersion lithography
Author(s): Masaya Yoshino; Hiroshi Umeda; Hiroaki Tsushima; Hidenori Watanabe; Satoshi Tanaka; Shinich Matsumoto; Takashi Onose; Hiroyuki Nogawa; Yasufumi Kawasuji; Takashi Matsunaga; Junichi Fujimoto; Hakaru Mizoguchi
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Laser bandwidth effect on overlay budget and imaging for the 45 nm and 32nm technology nodes with immersion lithography
Author(s): Umberto Iessi; Michiel Kupers; Elio De Chiara; Pierluigi Rigolli; Ivan Lalovic; G. Capetti
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Laser spectrum requirements for tight CD control at advanced logic technology nodes
Author(s): R. C. Peng; H. J. Lee; John Lin; Arthur Lin; Allen Chang; Benjamin Szu-Min Lin
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Pattern deformation caused by deformed pellicle with ArF exposure
Author(s): Jee-Hye You; Ilsin An; Hye-Keun Oh
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Study for lithography techniques of hybrid mask shape of contact hole with 1.35NA polarized illumination for 28nm-node and below logic LSI
Author(s): Yuji Setta; Katsuyoshi Kobayashi; Tatsuo Chijimatsu; Satoru Asai
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Applications of MoSi-based binary intensity mask for sub-40nm DRAM
Author(s): Tae-Seung Eom; Eun-Kyoung Shin; Eun-Ha Lee; Yoon-Jung Ryu; Jun-Taek Park; Sunyoung Koo; Hye-Jin Shin; Seung-Hyun Hwang; Hee-Youl Lim; Sarohan Park; Kyu-Tae Sun; Noh-Jung Kwak; Sung-Ki Park
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OMOG mask topography effect on lithography modeling of 32nm contact hole patterning
Author(s): Lei Yuan; Wenzhan Zhou; Larry L. Zhuang; Kwang Sub Yoon; Qun Ying Lin; Scott Mansfield
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Fast-converging iterative gradient decent methods for high pattern fidelity inverse mask design
Author(s): Jue-Chin Yu; Peichen Yu
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Radial segmentation approach for contact hole patterning in 193 nm immersion lithography
Author(s): Moh Lung Ling; Gek Soon Chua; Sia Kim Tan; Cho Jui Tay; Chenggen Quan; Qunying Lin
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Binary mask optimization for forward lithography based on boundary layer model in coherent systems
Author(s): Xu Ma; Gonzalo R. Arce
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Improvement in process window aware OPC
Author(s): Xiaohai Li; Yasushi Kojima; Hironobu Taoka; Akemi Moniwa; Matt St. John; Yang Ping; Randall Brown; Robert Lugg; Sooryong Lee
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A non-delta-chrome OPC methodology for process models with three-dimensional mask effects
Author(s): Philip C. W. Ng; Kuen-Yu Tsai; Chih-Hsien Tang; Lawrence Melvin
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A new etch-aware after development inspection (ADI) technique for OPC modeling
Author(s): Jing Xue; Jason Huang; Aram Kazarian; Brad Falch
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Wafer LMC accuracy improvement by adding mask model
Author(s): Wei Cyuan Lo; Yung Feng Cheng; Ming Jui Chen; Peter Haung; Stephen Chang; Eiji Tsujimoto
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Study of model based etch bias retarget for OPC
Author(s): Qingwei Liu; Renqiang Cheng; Liguo Zhang
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Metamaterials for enhancement of DUV lithography
Author(s): Andrew Estroff; Neal V. Lafferty; Peng Xie; Bruce W. Smith
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Toward a consistent and accurate approach to modeling projection optics
Author(s): Danping Peng; Peter Hu; Vikram Tolani; Thuc Dam; Jacek Tyminski; Steve Slonaker
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Stepwise fitting methodology for optical proximity correction modeling
Author(s): Artak Isoyan; Jianliang Li; Lawrence S. Melvin
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Automatic numerical determination of lateral influence functions for fast-CAD
Author(s): Marshal A. Miller; Kenji Yamazoe; Andrew R. Neureuther
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Aerial image model and application to aberration measurement
Author(s): Anatoly Y. Bourov; Liang Li; Zhiyong Yang; Fan Wang; Lifeng Duan
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Methods for benchmarking photolithography simulators: part V
Author(s): Trey Graves; Mark D. Smith; Sanjay H. Kapasi
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Selective inverse lithography methodology
Author(s): ChinTeong Lim; Vlad Temchenko; Martin Niehoff
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CDU linear model based on aerial image principal components
Author(s): Zhiyong Yang; Anatoly Y. Burov; Liang Li; Fan Wang; Zhaoxiang Chu
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Impact of illumination on model-based SRAF placement for contact patterning
Author(s): John L. Sturtevant; Srividya Jayaram; Omar El-Sewefy; Aasutosh Dave; Pat LaCour
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A novel decomposition of source kernel for OPC modeling
Author(s): C. T. Hsuan; T. S. Wu; Fred Lo; Elvis Yang; T. H. Yang; K. C. Chen; Chih-Yuan Lu
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Methods for assessing empirical model parameters and calibration pattern measurements
Author(s): Xin Zhou; Eldar Khaliullin; Lan Luan
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A simplified reaction-diffusion system of chemically amplified resist process modeling for OPC
Author(s): Yongfa Fan; Moon-Gyu Jeongb; Junghoon Ser; Sung-Woo Lee; Chunsuk Suh; Kyo-Il Koo; Sooryong Lee; Irene Su; Lena Zavyalova; Brad Falch; Jason Huang; Thomas Schmoeller
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Improved process window modeling techniques
Author(s): Christian Zuniga; Tamer Tawfik
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Lithography cycle time improvements using short-interval scheduling
Author(s): David Norman; Scott Watson; Michael Anderson; Steve Marteney; Ben Mehr
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The impacts of scanner modeling parameters for OPC model of sub-40nm memory device
Author(s): Cheol-Kyun Kim; Jong-won Jang; Jinhyuck Jeon; Chan-ha Park; Hyun-jo Yang; Donggyu Yim; Sungki Park
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Topography-aware BARC optimization for double patterning
Author(s): Shijie Liu; Tim Fühner; Feng Shao; Aliaksandr Barenbaum; Johannes Jahn; Andreas Erdmann
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A novel method to reduce wafer topography effect for implant lithography process
Author(s): Lei Yuan; Sanggil Bae; Yong Feng Fu; Ao Chen; Hui Peng Koh; Qun Ying Lin
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Immersion BARC for hyper NA applications II
Author(s): Yu-Chin Huang; Kai-Lin Chuang; Tsung-Ju Yeh; Steven Wu; Bill Lin; Wen-Liang Huang; Bo-Jou Lu; E. T. Liu; Chun Chi Yu; Chaoyang Lin; Jeong Yun Yu; Greg Prokopowicz; Sue Ryeon Kim; Sabrina Wong; George Barclay
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Methods and challenges to extend existing dry 193nm medium NA lithography beyond 90nm
Author(s): Jens Schneider; Andreas Greiner; ChinTeong Lim; Vlad Temchenko; Felix Braun; Dieter Kaiser; Tarja Hauck; Ingo Meusel; Dietrich Burmeister; Stephan Loehr; Susanne Volkland; Astrid Bauch; Hendrik Kirbach; Daniel Sarlette; Katrin Thiede
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Examining reflectivity criterion for various ArF lithography
Author(s): Meng-Feng Tsai; Chia-Chi Lin; Wei-Chun Chao; Chan-Tsun Wu; Jun-Cheng Lai
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CD-uniformity for 45nm NV memory on product-stack
Author(s): Umberto Iessi; Brian Colombo; Johannes Plauth; Benedetta Triulzi; Elio De Chiara; Paolo Canestrari
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Lithography light source fault detection
Author(s): Matthew Graham; Erica Pantel; Patrick Nelissen; Jeffrey Moen; Eduard Tincu; Wayne Dunstan; Daniel Brown
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Intra field CD uniformity correction by Scanner Dose MapperTM using Galileo® mask transmission mapping as the CDU data source
Author(s): Gek Soon Chua; Chason Eran; Sia Kim Tan; Byoung IL Choi; Teng Hwee Ng; Poh Ling Lua; Ofir Sharoni; Guy Ben-Zvi
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High fluence testing of optical materials for 193-nm lithography extensions applications
Author(s): V. Liberman; S. Palmacci; G. P. Geurtsen; M. Rothschild; P. A. Zimmerman
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Analysis of photoresist edge bead removal using laser light and gas
Author(s): V. Chaplick; E. Degenkolb; D. Elliott; K. Harte; R. Millman; M. Tardif
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Self-aligned double patterning process for 32/32nm contact/space and beyond using 193 immersion lithography
Author(s): Bencherki Mebarki; Liyan Miao; Yongmei Chen; James Yu; Pokhui Blanco; James Makeeff; Jen Shu; Christopher Bencher; Mehul Naik; Christopher Sui Wing Ngai
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