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PROCEEDINGS VOLUME 7639

Advances in Resist Materials and Processing Technology XXVII
Editor(s): Robert D. Allen
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Volume Details

Volume Number: 7639
Date Published: 3 March 2010
Softcover: 103 papers (1010) pages
ISBN: 9780819480538

Table of Contents
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Front Matter: Volume 7639
Author(s): Proceedings of SPIE
The evolution of patterning process models in computational lithography
Author(s): John L. Sturtevant
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Resist material for negative tone development process
Author(s): Shinji Tarutani; Sou Kamimura; Yuuichiro Enomoto; Keita Katou
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Non-reciprocal double-exposure materials for 193nm pitch division
Author(s): Robert Bristol; Jeanette Roberts; David Shykind; James M. Blackwell
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Photobase generator assisted pitch division
Author(s): Xinyu Gu; Christopher M. Bates; Younjin Cho; Takanori Kawakami; Tomoki Nagai; Toshiyuki Ogata; Arunkumar K. Sundaresan; Nicholas J. Turro; Robert Bristol; Paul Zimmerman; C. Grant Willson
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The important challenge to extend spacer DP process towards 22nm and beyond
Author(s): Kenichi Oyama; Eiichi Nishimura; Masato Kushibiki; Kazuhide Hasebe; Shigeru Nakajima; Hiroki Murakami; Arisa Hara; Shohei Yamauchi; Sakurako Natori; Kazuo Yabe; Tomohito Yamaji; Ryota Nakatsuji; Hidetami Yaegashi
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Carbon-rich spin on sidewall material for self-aligned double-patterning technology
Author(s): Dennis Shu-Hao Hsu; Hiroaki Yaguchi; Rikimaru Sakamoto; Daisuke Maruyama; Yasushi Sakaida; Walter Wang; Chun-Yen Huang; Wen-Bin Wu; Bang-Ching Ho; Chiang-Lin Shih
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Study on approaches for improvement of EUV-resist sensitivity
Author(s): Shinji Tarutani; Hideaki Tsubaki; Hidenori Takahashi; Takayuki Itou
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Polymer photochemistry at the EUV wavelength
Author(s): Theodore H. Fedynyshyn; Russell B. Goodman; Alberto Cabral; Charles Tarrio; Thomas B. Lucatorto
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Analysis of trade-off relationships in resist patterns delineated using SFET of Selete
Author(s): Takahiro Kozawa; Hiroaki Oizumi; Toshiro Itani; Seiichi Tagawa
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Advanced patterning solutions based on the shrink process assisted by double exposure (SPADE)
Author(s): Young C. Bae; Yi Liu; Thomas Cardolaccia; Rosemary Bell; Ken Spizuoco; George G. Barclay
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Design, synthesis, and characterization of fluorine-free PAGs for 193-nm lithography
Author(s): Sen Liu; Martin Glodde; Pushkara Rao Varanasi
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Development of an inorganic photoresist for DUV, EUV, and electron beam imaging
Author(s): Markos Trikeriotis; Woo Jin Bae; Evan Schwartz; Marie Krysak; Neal Lafferty; Peng Xie; Bruce Smith; Paul A. Zimmerman; Christopher K. Ober; Emmanuel P. Giannelis
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A silicon-containing resist for immersion lithography
Author(s): Ratnam Sooriyakumaran; Wu-Song Huang; Sally Swanson; Hoa Truong; Phillip Brock; Alexander Friz; Kuang-Jung Chen; Robert Allen
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New self-assembly strategies for next-generation lithography
Author(s): Evan L. Schwartz; Joan K. Bosworth; Marvin Y. Paik; Christopher K. Ober
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Design and development of production-worthy developable BARCs(DBARCs) for implant lithography
Author(s): James Cameron; John Amara; Jin Wuk Sung; David Valeri; Adam Ware; Kevin O'Shea; Yoshihiro Yamamoto; Hiroaki Kitaguchi; Libor Vyklicky; Irene Popova; Pushkara R. Varanasi
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Fabrication of dual damascene BEOL structures using a multilevel multiple exposure (MLME) scheme, part 1: lithographic patterning
Author(s): Dario L. Goldfarb; Stefan Harrer; John C. Arnold; Steven J. Holmes; Rex Chen; Cherry Tang; Nicolette Fender; Mark Slezak; Ronald A. Della Guardia; Eric A. Joseph; Sebastian U. Engelmann; Roa P. Varanasi; Matthew E. Colburn
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Multilevel integration of patternable low-κ material into advanced Cu BEOL
Author(s): Qinghuang Lin; S. T. Chen; A. Nelson; P. Brock; S. Cohen; B. Davis; N. Fuller; R. Kaplan; R. Kwong; E. Liniger; D. Neumayer; J. Patel; H. Shobha; R. Sooriyakumaran; S. Purushothaman; T. Spooner; R. Miller; R. Allen; R. Wisnieff
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Advantages of BARC and photoresist matching for 193-nm photosensitive BARC applications
Author(s): Joyce Lowes; Victor Pham; Jim Meador; Charlyn Stroud; Ferdinand Rosas; Ramil-Marcelo L. Mercado; Mark Slezak
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Sub-millisecond post exposure bake of chemically amplified resists by CO2 laser heat treatment
Author(s): Byungki Jung; Jing Sha; Florencia Paredes; Christopher K. Ober; Michael O. Thompson; Manish Chandhok; Todd R. Younkin
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EUV RLS performance tradeoffs for a polymer bound PAG resist
Author(s): Roel Gronheid; Alessandro Vaglio Pret; Benjamen Rathsack; Joshua Hooge; Steven Scheer; Kathleen Nafus; Hideo Shite; Junichi Kitano
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Aqueous and solvent developed negative-tone molecular resists
Author(s): Richard A. Lawson; Jing Cheng; David E. Noga; Todd R. Younkin; Laren M. Tolbert; Clifford L. Henderson
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Comparison of star and linear ArF resists
Author(s): Drew C. Forman; Florian Wieberger; Andre Gröschel; Axel H. E. Müller; Hans-Werner Schmidt; Christopher K. Ober
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Characteristics of main chain decomposable star shaped polymer on EUV lithography
Author(s): Taku Hirayama; Jun Iwashita; Sachiko Yoshizawa; Kenri Konno; Takeshi Iwai
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Development of EUV resists based on various new materials
Author(s): Hiroaki Oizumi; Kazuyuki Matsumaro; Julius Santillan; Gousuke Shiraishi; Koji Kaneyama; Kentaro Matsunaga; Toshiro Itani
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High resolution positive-working molecular resist attached with alicyclic acid-leaving group
Author(s): Arisa Yamada; Shigeki Hattori; Satoshi Saito; Koji Asakawa; Takeshi Koshiba; Tetsuro Nakasugi
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Methods to explore and prevent pattern collapse in thin film lithography
Author(s): David E. Noga; Wei-Ming Yeh; Richard A. Lawson; Laren M. Tolbert; Clifford L. Henderson
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A method to characterize pattern density effects: chemical flare and develop loading
Author(s): Linda K. Sundberg; Gregory M. Wallraff; Alexander M. Friz; Amy E. Zweber; Zdenek Benes; Robert D Lovchik; Emmanuel Delamarche; William D. Hinsberg
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Is the resist sidewall after development isotropic or anisotropic? effects of resist sidewall morphology on LER reduction and transfer during etching
Author(s): Vassilios Constantoudis; George Kokkoris; Evangelos Gogolides; Erwine Pargon; Mickael Martin
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Inactivation technology for pitch doubling lithography
Author(s): Jun Hatakeyama; Masaki Ohashi; Youichi Ohsawa; Kazuhiro Katayama; Yoshio Kawai
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Process feasibility investigation of freezing free litho-litho-etch process for below 32nm hp
Author(s): Tsuyoshi Nakamura; Masaru Takeshita; Jiro Yokoya; Yasuhiro Yoshii; Hirokuni Saito; Ryoichi Takasu; Katsumi Ohmori
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Evolution of thermal cure resist for double patterning applications
Author(s): Michael Reilly; Young C. Bae; Vaishali Vohra; Chiew-Seng Koay; Matthew Colburn
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Process characterization of pitch-split resist materials for application at 16nm node
Author(s): Steven J. Holmes; Cherry Tang; John C. Arnold; Yunpeng Yin; Rex Chen; Nicolette Fender; Brian Osborn; Gary Dabbagh; Sen Liu; Matthew Colburn; Rao P. Varanasi; Mark Slezak
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Simplified double patterning process with non-topcoat self-freezing resist
Author(s): Tomohisa Fujisawa; Yusuke Anno; Masafumi Hori; Goji Wakamatsu; Michihiro Mita; Koji Ito; Hiromitsu Tanaka; Kenji Hoshiko; Takeo Shioya; Kentaro Goto; Yoshifumi Ogawa; Hiroaki Takikawa; Yutaka Kozuma; Koichi Fujiwara; Makoto Sugiura; Yoshikazu Yamaguchi; Tsutomu Shimokawa
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Controlling 2D aspect ratio of elliptical contact level interconnects utilizing spin-on and reactive ion etch critical dimension shrink for the 22-nm node
Author(s): Andrew Metz; Shannon Dunn; Dave Hetzer; Jason Cantone; Shinichiro Kawakami; Tom Winter; Karen Petrillo; Dave Horak; Susan Fan; Matthew Colburn
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Roughness characterization in the frequency domain and LWR mitigation with post-litho processes
Author(s): Alessandro Vaglio-Pret; Roel Gronheid; Philippe Foubert
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Line-edge roughness and the ultimate limits of lithography
Author(s): Chris A. Mack
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Meso-scale simulation of the line-edge structure based on polymer chains in the developing and rinse process
Author(s): Hiroshi Morita; Masao Doi
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Particle generation during photoresist dissolution
Author(s): Siddharth Chauhan; Mark Somervell; Michael Carcasi; Steven Scheer; Roger T. Bonnecaze; Chris Mack; C. Grant Willson
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Predictive linewidth roughness and CDU simulation using a calibrated physical stochastic resist model
Author(s): Stewart A. Robertson; John J. Biafore; Mark D. Smith; Michael T. Reilly; Jerome Wandell
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Reflectivity metrics for optimization of anti-reflection coatings on wafers with topography
Author(s): Mark D. Smith; Trey Graves; John Biafore; Stewart Robertson
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Continuous evolution of lithographic films through process steps: an example with 193 chemically amplified resists
Author(s): Samir Derrough; Raluca Tiron; Damien Perret; James W. Thackeray; Claire Sourd; Patrick Paniez
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Topcoat-less resist process for 2Xnm node devices
Author(s): Changil Oh; Junghyung Lee; Junggun Heo; Hyunkyung Shim; Keundo Ban; Cheolkyu Bok; Donggyu Yim; Sungki Park
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Negative-tone chemically amplified molecular resist based on novel fullerene derivative for nanolithography
Author(s): Hiroki Yamamoto; Takahiro Kozawa; Seiichi Tagawa; Tomoyuki Ando; Katsumi Ohmori; Mitsuru Sato; Junichi Onodera
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Non-chemically amplified resists for 193-nm immersion lithography: influence of absorbance on performance
Author(s): Lan Chen; Yong-Keng Goh; Kirsten Lawrie; Bruce Smith; Warren Montgomery; Paul A. Zimmerman; Idriss Blakey; Andrew K. Whittaker
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Photobase generator and photo decomposable quencher for high-resolution photoresist applications
Author(s): C. W. Wang; C. Y. Chang; Y. Ku
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The optimizations of resist shrink process using track-based technology
Author(s): Yoshihiro Kondo; Atsushi Ookouchi; Toyohisa Tsuruda; Masahiro Yamamoto; Takasi Saito; Tsuyoshi Shibata; Satoru Shimura; Fumiko Iwao; Ben Rathsack; Michael Carcasi
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Dependence of 20-nm C/H CD windows on critical process parameters
Author(s): Wei-Su Chen; Pei-Yi Gu; Ming-Jinn Tsai
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Orthogonal lithography for organic electronics
Author(s): Priscilla G. Taylor; Jin-Kyun Lee; Alexander A. Zakhidov; Ha Soo Hwang; John A. DeFranco; Hon Hang Fong; Margarita Chatzichristidi; Eisuke Murotani; George G. Malliaras; Christopher K. Ober
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Grayscale lithography process study applied to zero-gap microlenses for sub-2μm CMOS image sensors
Author(s): S. Audran; J. Vaillant; V. Farys; F. Hirigoyen; E. Huss; B. Mortini; C. Cowache; L. Berthier; E. Mortini; J. Fantuz; O. Arnaud; L. Depoyan; F. Sundermann; C. Baron; J.-P. Reynard
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Improved thermal flow characteristic resist optimized for the manufacturing of microlenses
Author(s): Medhat A. Toukhy; Margareta Puanescu; Stephen Meyer
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Environmentally friendly processing of photoresists in scCO[sub]2[/sub] and decamethyltetrasiloxane
Author(s): Christine Y. Ouyang; Jin-Kyun Lee; Jing Sha; Christopher K. Ober
Show Abstract
Gap-fill type HSQ/ZEP520A bilayer resist process-(IV): HSQ-rod and HSQ-tip hardening processes
Author(s): Wei-Su Chen; Ming-Jinn Tsai
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LWR reduction by novel lithographic and etch techniques
Author(s): Shinji Kobayashi; Satoru Shimura; Tetsu Kawasaki; Kathleen Nafus; Shinichi Hatakeyama; Hideo Shite; Eiichi Nishimura; Masato Kushibiki; Arisa Hara; Roel Gronheid; Alessandro Vaglio-Pret; Junichi Kitano
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Alternatives to chemical amplification for 193nm lithography
Author(s): Burak Baylav; Meng Zhao; Ran Yin; Peng Xie; Chris Scholz; Bruce Smith; Thomas Smith; Paul Zimmerman
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Further analysis of the effect of point-of-use filtration on microbridging defectivity
Author(s): J. Braggin; R. Gronheid; S. Cheng; D. Van den Heuvel; S. Bernard; P. Foubert; C. Rosslee
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Point-of-use filtration methods to reduce defectivity
Author(s): Jennifer Braggin; Wim Schoallert; Kenji Hoshiko; Xavier Buch
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Fabrication of dual damascene BEOL structures using a multilevel multiple exposure (MLME) scheme, part 2: RIE-based pattern transfer and completion of dual damascene process yielding an electrically functional via chain
Author(s): Stefan Harrer; John C. Arnold; Dario L. Goldfarb; Steven J. Holmes; Rex Chen; Cherry Tang; Mark Slezak; Nicolette Fender; Ronald A. Della Guardia; Eric A. Joseph; Sebastian U. Engelmann; Shyng-Tsong Chen; Dave Horak; Yunpeng Yin; Rao P. Varanasi; Matthew E. Colburn
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Resist residue removal using UV ozone treatment
Author(s): Shu-Fang Chen; Ching-Yu Chang; Yao-Ching Ku
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The imaging study of a novel photopolymer used in I-line negative-tone resist
Author(s): Lu Liu; Yingquan Zou
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Highly sensitive EUV-resist based on thiol-ene radical reaction
Author(s): Masamitsu Shirai; Koichi Maki; Haruyuki Okamura; Koji Kaneyama; Toshiro Itani
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Dynamics of radical cation of poly(4-hydroxystyrene) generated in thin film upon exposure to electron beam
Author(s): Kenichiro Natsuda; Takahiro Kozawa; Kazumasa Okamoto; Akinori Saeki; Seiichi Tagawa
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Evaluation of hydroxyl derivatives for chemically amplified extreme ultraviolet resist
Author(s): Kikuo Furukawa; Yoshihisa Arai; Hiroki Yamamoto; Takahiro Kozawa; Seiichi Tagawa
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Characterization of the effects of base additives on a fullerene chemically amplified resist
Author(s): Jedsada Manyam; Mayandithevar Manickam; Jon A. Preece; Richard E. Palmer; Alex P. Robinson
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Study on acid diffusion length effect with PAG-blended system and anion-bounded polymer system
Author(s): Shinji Tarutani; Hideaki Tsubaki; Hidenori Takahashi; Takayuki Itou; Kentaro Matsunaga; Gousuke Shiraishi; Toshiro Itani
Show Abstract
Process parameter influence to negative tone development process for double patterning
Author(s): Shinji Tarutani; Sou Kamimura; Jiro Yokoyama
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Bottom anti-reflective coatings (BARC) for LFLE double patterning process
Author(s): Rikimaru Sakamoto; Takafumi Endo; Bang-Ching Ho; Shigeo Kimura; Tomohisa Ishida; Masakazu Kato; Noriaki Fujitani; Ryuji Onishi; Yoshiomi Hiroi; Daisuke Maruyama
Show Abstract
Mesh patterning process for 40nm contact hole
Author(s): Kilyoung Lee; Cheolkyu Bok; Jaeheon Kim; Hyunkyung Shim; Junggun Heo; Junghyung Lee; Hyeong-Soo Kim; Donggu Yim; Sung-Ki Park
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Advanced self-aligned DP process development for 22-nm node and beyond
Author(s): Arisa Hara; Eiichi Nishimura; Masato Kushibiki; Shoichi Yamauchi; Sakurako Natori; Kazuo Yabe; Kenichi Oyama; Hidetami Yaeasghi
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Novel approaches to controlling photo-resist CD in double patterning processes
Author(s): Kazuo Yabe; Kazuhide Hasebe; Shigeru Nakajima; Hiroki Murakami; Arisa Hara; Shoichi Yamauchi; Sakurako Natori; Kenichi Oyama; Hidetami Yaeasghi
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Simplified "Litho-Cluster-Only" solution for double patterning
Author(s): H. Tanaka; K. Hoshiko; T. Shimokawa; H. F. Hoefnagels; D. E. Keller; S. Wang; O. Tanriseven; R. Maas; J. Mallman; K. Shigemori; C. Rosslee
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Process performance of novel resist material and novel coater/developer system for cross-line contact hole process
Author(s): Tsuyoshi Nakamura; Jiro Yokoya; Katsumi Ohmori; Hiroshi Nakamura; Takafumi Niwa; Hideharu Kyouda; Junichi Kitano
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Improving CD uniformity for thermal cured systems in double patterning
Author(s): Lori Joesten; Ken Spizuoco; Yi Liu; Young Bae
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Reaction kinetics of non-reciprocal photo-base generator (NRPBG) patterning
Author(s): D. Shykind; R. Bristol; J. Roberts; J. Blackwell; Y. Borodovsky
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Development of reverse materials for double patterning process
Author(s): Yasushi Sakaida; Hiroaki Yaguchi; Rikimaru Sakamoto; Bang-Ching Ho
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Study of post develop defect on TC-less immersion resist
Author(s): Masahiko Harumoto; Sadayasu Suyama; Tadashi Miyagi; Akihiro Hisai; Masaya Asai
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Novel topcoat materials with improved receding angles and dissolution properties for ArF immersion lithography
Author(s): Sang Geun Yun; Jin Young Lee; Young Soo Yang; Seung Wook Shin; Sung Jae Lee; Hyo Young Kwon; Youn Jin Cho; Seung Jib Choi; Sang Jun Choi; Jong Seob Kim; Tuwon Chang
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Evaluation of next generation hardware for lithography processing
Author(s): T. Shimoaoki; M. Enomoto; K. Nafus; H. Marumoto; H. Kosugi; J. Mallmann; R. Maas; C. Verspaget; E. van der Heijden; S. Wang
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Topcoat-less resist process development for contact layer of 40nm node logic devices
Author(s): Masafumi Fujita; Takayuki Uchiyama; Tetsunari Furusho; Takahisa Otsuka; Katsuhiro Tsuchiya
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Productivity improvement in the wafer bevel and backside cleaning before exposure
Author(s): Yoichi Tokunaga; Shuuichi Nishikido; Kousuke Yoshihara; Zoe Hong; Marlene Strobl; Yu Chen Lin
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High contact angle fluorosulfonamide-based materials for immersion lithography
Author(s): Daniel P. Sanders; Linda K. Sundberg; Masaki Fujiwara; Yoshiharu Terui; Manabu Yasumoto
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Photoresist-induced development behavior in DBARCs
Author(s): Jim D. Meador; Alice Guerrero; Joyce A. Lowes; Charlyn Stroud; Brandy Carr; Anwei Qin; Carlton Washburn; Ramil-Marcelo L. Mercado
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Noble design of Si-SOH in trilayer resist process for sub-30-nm logic device
Author(s): Tae-Hwan Oh; Yunsuk Nam; Chansam Chang; Suhyun Kim; Minkeun Kwak; Dongsu Kim; Hongjae Shin; Nae-In Lee; Jongshik Yoon
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Process optimization consideration for 193nm developable bottom anti-reflective coatings (DBARCs)
Author(s): Takanori Kudo; Srinivasan Chakrapani; Alberto Dioses; Edward Ng; Charito Antonio; Deepa Parthasarathy; Richard Collett; Mark Neisser; Munirathna Padmanaban
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Improving material-specific dispense processes for low-defect coatings
Author(s): Brian Smith; Raul Ramirez; Jennifer Braggin; Aiwen Wu; Karl Anderson; John Berron; Nick Brakensiek; Carlton Washburn
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Development of molecular resists based on Phenyl[4]calixarene derivatives.
Author(s): Masatoshi Echigo; Hiromi Hayashi; Hiroaki Oizumi; Kazuyuki Matsumaro; Toshiro Itani
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All-dry processible and PAG-attached molecular glasses for improved lithographic performance
Author(s): Marie Krysak; Tristan Kolb; Christian Neuber; Hans-Werner Schmidt; Christopher K. Ober
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Molecular glass positive i-line photoresist materials containing 2,1,4-DNQ and acid labile group
Author(s): Liyuan Wang; Jinxing Yu; Na Xu
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Novel molecular glass photoresist materials for next-generation lithography
Author(s): Arimichi Okumura; Yoshinori Funaki; Akira Takaragi; Kazuki Okamoto; Kiyoharu Tsutsumi; Keizo Inoue; Ryou Itaya; Kiyoshi Ikura; Yuki Iguchi
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Non-traditional resist designs using molecular resists: positive tone cross-linked and non-chemically amplified molecular resists
Author(s): Richard A. Lawson; David E. Noga; Jing Cheng; Laren M. Tolbert; Clifford L. Henderson
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Three-dimensional mesoscale model for the simulation of LER in photoresists
Author(s): Richard A. Lawson; Clifford L. Henderson
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Evolution of resist roughness during development: stochastic simulation and dynamic scaling analysis
Author(s): Vassilios Constantoudis; George P. Patsis; Evangelos Gogolides
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Macroscopic and stochastic modeling approaches to pattern doubling by acid catalyzed cross-linking
Author(s): Jürgen Fuhrmann; André Fiebach; George P. Patsis
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Extension of 248 nm Monte Carlo, mesoscale models to 193 nm platforms
Author(s): Michael Carcasi; Mark Somervell; Steven Scheer; Siddharth Chauhan; Jeffrey Strahan; C. G. Willson
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Stochastic modeling of photoresist development in 2D and 3D
Author(s): Chris A. Mack
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Simulation study of directed self-assembly for 10-nm pattern formation
Author(s): Sang-Kon Kim; Hye-Keun Oh; Young-Dae Jung; Ilsin An
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Theoretical analysis of energy dissipation of electron in the resists II
Author(s): Minoru Toriumi
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Development of spin-on hard mask materials under resist in nano imprint lithography
Author(s): Satoshi Takei; Tsuyoshi Ogawa; Ryan Deschner; Kane Jen; Makoto Hanabata; C. Grant Willson
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Accelerating the dual damascene process time by new filling material
Author(s): Kung-Hsun Tsao; Yu-Huan Liu; Tsz-Yuan Chen; Chih-Jung Chen; C. C. Huang; Yung-Cheng Chang; Go Noya; Nick Hsiao; Simon Chiu; Vencent Chang; Tomohide Katayama; Hisashi Motobayashi
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Changes in vertical PAG distribution inside photoresist due to the variation of concentration
Author(s): Jae Hyun Kim; Sung Il Ahn; Jin Goo Yoon; Youngho Kim; Seung-Ki Chae; Wang-Cheol Zin
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Defect performance of a 2X node resist with a revolutionary point-of-use filter
Author(s): J. Braggin; R. Ramirez; A. Wu; W. Choi; I. Funahshi; K. Yamamoto
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New filter rating method in practice for sub-30-nm lithography process filter
Author(s): Toru Umeda; Takehito Mizuno; Shuichi Tsuzuki; Toru Numaguchi
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The use of surface modifiers to mitigate pattern collapse in thin film lithography
Author(s): David E. Noga; Wei-Ming Yeh; Richard A. Lawson; Laren M. Tolbert; Clifford L. Henderson
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Thin film buckling as a method to explore the effect of reactive rinse treatments on the mechanical properties of resist thin films
Author(s): Wei-Ming Yeh; David E. Noga; Richard A. Lawson; Laren M. Tolbert; Clifford L. Henderson
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