Share Email Print
cover

Proceedings of SPIE Volume 7636

Extreme Ultraviolet (EUV) Lithography
Format Member Price Non-Member Price
Softcover $105.00 * $105.00 *

*Available as a photocopy reprint only. Allow two weeks reprinting time plus standard delivery time. No discounts or returns apply.


Volume Details

Volume Number: 7636
Date Published: 3 March 2010
Softcover: 107 papers (1064) pages
ISBN: 9780819480507

Table of Contents
show all abstracts | hide all abstracts
Front Matter: Volume 7636
Author(s): Proceedings of SPIE
Actinic phase defect detection and printability analysis for patterned EUVL mask
Author(s): Tsuneo Terasawa; Takeshi Yamane; Toshihiko Tanaka; Osamu Suga; Takashi Kamo; Ichiro Mori
Show Abstract
Optics for EUV production
Author(s): Martin Lowisch; Peter Kuerz; Hans-Juergen Mann; Oliver Natt; Bernd Thuering
Show Abstract
Characterization of promising resist platforms for sub-30-nm HP manufacturability and EUV CAR extendibility study
Author(s): Chawon Koh; Jacque Georger; Liping Ren; George Huang; Frank Goodwin; Stefan Wurm; Dominic Ashworth; Warren Montgomery; Bill Pierson; Joo-on Park; Patrick Naulleau
Show Abstract
Characterization of line-edge roughness (LER) propagation from resists: underlayer interfaces in ultrathin resist films
Author(s): Simi A. George; Patrick P. Naulleau; Ahila Krishnamoorthy; Zeyu Wu; Edward W. Rutter; Joseph T. Kennedy; Song Yuan Xie; Kyle Y. Flanigan; Thomas I. Wallow
Show Abstract
First generation laser-produced plasma source system for HVM EUV lithography
Author(s): Hakaru Mizoguchi; Tamotsu Abe; Yukio Watanabe; Takanobu Ishihara; Takeshi Ohta; Tsukasa Hori; Akihiko Kurosu; Hiroshi Komori; Kouji Kakizaki; Akira Sumitani; Osamu Wakabayashi; Hiroaki Nakarai; Junichi Fujimoto; Akira Endo
Show Abstract
EUV source development for AIMS and blank inspection
Author(s): Paul A. Blackborow; Matthew J. Partlow; Stephen F. Horne; Matthew M. Besen; Donald K. Smith; Deborah Gustafson
Show Abstract
Analysis, simulation, and experimental studies of YAG and CO[sub]2[/sub] laser-produced plasma for EUV lithography sources
Author(s): A. Hassanein; V. Sizyuk; S. S. Harilal; T. Sizyuk
Show Abstract
Sn debris cleaning by plasma in DPP EUV source systems for HVM
Author(s): H. Shin; V. Surla; M. J. Neumann; D. N. Ruzic
Show Abstract
Development and performance of grazing and normal incidence collectors for the HVM DPP and LPP sources
Author(s): G. Bianucci; A. Bragheri; G. L. Cassol; B. Johnson; M. Rossi; F. E. Zocchi
Show Abstract
Experimental and numerical investigations on the density profile of CO2 laser-produced Sn plasma for an EUVL source
Author(s): Y. Tao; Y. Ueno; S. Yuspeh; R. A. Burdt; N. Amin; N. M. Shaikh; M. S. Tillack; F. Najmabadi
Show Abstract
Complex species and pressure dependence of intensity scaling laws for contamination rates of EUV optics determined by XPS and ellipsometry
Author(s): S. B. Hill; N. S. Faradzhev; L. J. Richter; T. B. Lucatorto
Show Abstract
Carbon film growth on model MLM cap layer: interaction of selected hydrocarbon vapor with Ru(10-10) surface
Author(s): B. V. Yakshinskiy; R. A. Bartynski
Show Abstract
Carbon contamination topography analysis of EUV masks
Author(s): Yu-Jen Fan; Leonid Yankulin; Petros Thomas; Chimaobi Mbanaso; Alin Antohe; Rashi Garg; Yunfei Wang; Thomas Murray; Andrea Wüest; Frank Goodwin; Sungmin Huh; Aaron Cordes; Patrick Naulleau; Kenneth Goldberg; Iacopo Mochi; Eric Gullikson; Gregory Denbeaux
Show Abstract
Monitoring reticle molecular contamination in ASML EUV Alpha Demo Tool
Author(s): Uzodinma Okoroanyanwu; Aiqin Jiang; Kornelia Dittmar; Torsten Fahr; Thomas Laursen; Obert Wood; Kevin Cummings; Christian Holfeld; Jan-Hendrik Peters; Eric Gullikson; Bruno La Fontaine
Show Abstract
Assessing EUV mask defectivity
Author(s): Uzodinma Okoroanyanwu; Anna Tchikoulaeva; Paul Ackmann; Obert Wood; Bruno La Fontaine; Karsten Bubke; Christian Holfeld; Jan Hendrik Peters; Sumanth Kini; Sterling Watson; Isaac Lee; Bo Mu; Phillip Lim; Sudhar Raghunathan; Carol Boye
Show Abstract
A study of defects on EUV masks using blank inspection, patterned mask inspection, and wafer inspection
Author(s): Sungmin Huh; Liping Ren; David Chan; Stefan Wurm; Kenneth Goldberg; Iacopo Mochi; Toshio Nakajima; Masahiro Kishimoto; Byungsup Ahn; Inyong Kang; Joo-on Park; Kyoungyong Cho; Sang-in Han; Thomas Laursen
Show Abstract
Impact of EUV mask absorber defect with pattern-roughness on lithographic images
Author(s): Takashi Kamo; Hajime Aoyama; Yukiyasu Arisawa; Mihoko Kijima; Toshihiko Tanaka; Osamu Suga
Show Abstract
Printability of extreme ultraviolet lithography mask pattern defects for 22-40 nm half-pitch features
Author(s): Grant M. Kloster; Ted Liang; Todd R. Younkin; Ernisse S. Putna; Roman Caudillo; Il-Seok Son
Show Abstract
Particle removal challenges of EUV patterned masks for the sub-22nm HP node
Author(s): Abbas Rastegar; Sean Eichenlaub; Arun John Kadaksham; Byunghoon Lee; Matt House; Sungmin Huh; Brian Cha; Henry Yun; Iacopo Mochi; Kenneth Goldberg
Show Abstract
Removal of carbon and nanoparticles from lithographic materials by plasma assisted cleaning by metastable atom neutralization (PACMAN)
Author(s): W. M. Lytle; R. E. Lofgren; V. Surla; M. J. Neumann; D. N. Ruzic
Show Abstract
EUV lithography for 22nm half pitch and beyond: exploring resolution, LWR, and sensitivity tradeoffs
Author(s): E. Steve Putna; Todd R. Younkin; Roman Caudillo; Manish Chandhok
Show Abstract
Patterning with EUVL: the road to 22nm node
Author(s): Hyun-Woo Kim; Hai-Sub Na; Kyoung-Yong Cho; Chang-Min Park; Takahiro Yasue; Subramanya Mayya; Han-Ku Cho
Show Abstract
Resist pattern prediction at EUV
Author(s): John J. Biafore; Mark D. Smith; Eelco van Setten; Tom Wallow; Patrick Naulleau; David Blankenship; Stewart A. Robertson; Yunfei Deng
Show Abstract
Development of resist material and process for hp-2x-nm devices using EUV lithography
Author(s): Kentaro Matsunaga; Hiroaki Oizumi; Koji Kaneyama; Gousuke Shiraishi; Kazuyuki Matsumaro; Julius Joseph Santillan; Toshiro Itani
Show Abstract
Development of EUV resist for 22nm half pitch and beyond
Author(s): Ken Maruyama; Makoto Shimizu; Yuuki Hirai; Kouta Nishino; Tooru Kimura; Toshiyuki Kai; Kentaro Goto; Shalini Sharma
Show Abstract
Improvement of total quality on EUV mask blanks toward volume production
Author(s): Tsutomu Shoki; Masaru Mitsui; Minoru Sakamoto; Noriyuki Sakaya; Masato Ootsuka; Tasuto Asakawa; Takeyuki Yamada; Hideaki Mitsui
Show Abstract
Mask inspection technologies for 22nm HP and beyond
Author(s): Daniel Wack; Qiang Q. Zhang; Gregg Inderhees; Dan Lopez
Show Abstract
Absorber stack optimization in EUVL masks: lithographic performances in alpha demo tool and other issues
Author(s): Hwan-Seok Seo; Dong-Gun Lee; Byung-Sup Ahn; Cha-Won Koh; In-Yong Kang; Tae Geun Kim; Hoon Kim; Dongwan Kim; Seong-Sue Kim; Han-Ku Cho
Show Abstract
Techniques for removal of contamination from EUVL mask without surface damage
Author(s): Sherjang Singh; Ssuwei Chen; Tobias Wähler; Rik Jonckheere; Ted Liang; Robert J. Chen; Uwe Dietze
Show Abstract
Inspecting EUV mask blanks with a 193nm system
Author(s): Stan Stokowski; Joshua Glasser; Gregg Inderhees; Phani Sankuratri
Show Abstract
Tin DPP source collector module (SoCoMo): status of Beta products and HVM developments
Author(s): Masaki Yoshioka; Yusuke Teramoto; Peter Zink; Guido Schriever; Gota Niimi; Marc Corthout
Show Abstract
Debris measurement at the intermediate focus of a laser-assisted discharge-produced plasma light source
Author(s): J. Sporre; V. Surla; M. J. Neumann; D. N. Ruzic; L. Ren; F. Goodwin
Show Abstract
Angular distribution of debris from CO[sub]2[/sub] and YAG laser-produced tin plasmas
Author(s): D. Campos; R. W. Coons; M. D. Fields; M. Crank; S. S. Harilal; A. Hassanein
Show Abstract
Normal incidence collector for LPP sources with integrated debris mitigation
Author(s): Andrea Z. Giovannini; Franz Dieterich; Ian Henderson; Ndaona Chokani; Reza S. Abhari
Show Abstract
Feasibility of EUVL thin absorber mask for minimization of mask shadowing effect
Author(s): Yoonsuk Hyun; Juntaek Park; Sunyoung Koo; Yongdae Kim; Keundo Ban; Seokkyun Kim; Changmoon Lim; Donggyu Yim; Hyeongsoo Kim; Sungki Park
Show Abstract
Full chip correction of EUV design
Author(s): G. F. Lorusso; E. Hendrickx; G. L. Fenger; A. Niroomand
Show Abstract
Study of practical TAT reduction approaches for EUV flare correction
Author(s): Ryoichi Inanami; Hiromitsu Mashita; Takamasa Takaki; Toshiya Kotani; Suigen Kyoh; Satoshi Tanaka
Show Abstract
EUV flare correction for the half-pitch 22nm node
Author(s): Yukiyasu Arisawa; Hajime Aoyama; Taiga Uno; Toshihiko Tanaka
Show Abstract
Physical resist models and their calibration: their readiness for accurate EUV lithography simulation
Author(s): U. K. Klostermann; T. Mülders; T. Schmöller; G. F. Lorusso; E. Hendrickx
Show Abstract
Actinic imaging of native and programmed defects on a full-field mask
Author(s): I. Mochi; K. A. Goldberg; B. La Fontaine; A. Tchikoulaeva; C. Holfeld
Show Abstract
Printability and inspectability of programmed pit defects on the masks in EUV lithography
Author(s): In-Yong Kang; Hwan-Seok Seo; Byung-Sup Ahn; Dong-Gun Lee; Dongwan Kim; Sungmin Huh; Cha-Won Koh; Brian Cha; Seoung-Sue Kim; Han-Ku Cho; Iacopo Mochi; Kenneth Goldberg
Show Abstract
Actinic review of EUV masks
Author(s): Heiko Feldmann; Johannes Ruoff; Wolfgang Harnisch; Winfried Kaiser
Show Abstract
EUV mask defect inspection and defect review strategies for EUV pilot line and high volume manufacturing
Author(s): Y. David Chan; Abbas Rastegar; Henry Yun; E. Steve Putna; Stefan Wurm
Show Abstract
The analysis of EUV mask defects using a wafer defect inspection system
Author(s): Kyoung-Yong Cho; Joo-On Park; Changmin Park; Young-Mi Lee; In-Yong Kang; Jeong-Ho Yeo; Seong-Woon Choi; Chan-Hoon Park; Steven R. Lange; SungChan Cho; Robert M. Danen; Gregory L. Kirk; Yeon-Ho Pae
Show Abstract
Evaluation results of a new EUV reticle pod based on SEMI E152
Author(s): Kazuya Ota; Masami Yonekawa; Takao Taguchi; Osamu Suga
Show Abstract
Nikon EUVL development progress update
Author(s): Takaharu Miura; Katsuhiko Murakami; Hidemi Kawai; Yoshiaki Kohama; Kenji Morita; Kazunari Hada; Yukiharu Ohkubo
Show Abstract
EUV into production with ASML's NXE platform
Author(s): Christian Wagner; Noreen Harned; Peter Kuerz; Martin Lowisch; Hans Meiling; David Ockwell; Rudy Peeters; Koen van Ingen-Schenau; Eelco van Setten; Judon Stoeldraijer; Bernd Thuering
Show Abstract
LPP source system development for HVM
Author(s): David C. Brandt; Igor V. Fomenkov; Alex I. Ershov; William N. Partlo; David W. Myers; Richard L. Sandstrom; Norbert R. Böwering; Georgiy O. Vaschenko; Oleh V. Khodykin; Alexander N. Bykanov; Shailendra N. Srivastava; Imtiaz Ahmad; Chirag Rajyaguru; Daniel J. Golich; Silvia De Dea; Richard R. Hou; Kevin M. O'Brien; Wayne J. Dunstan
Show Abstract
The SEMATECH Berkeley MET pushing EUV development beyond 22nm half pitch
Author(s): Patrick Naulleau; Christopher N. Anderson; Lorie-Mae Baclea-an; David Chan; Paul Denham; Simi George; Kenneth A. Goldberg; Brian Hoef; Gideon Jones; Chawon Koh; Bruno La Fontaine; Brittany McClinton; Ryan Miyakawa; Warren Montgomery; Seno Rekawa; Tom Wallow
Show Abstract
Iterative procedure for in-situ optical testing with an incoherent source
Author(s): Ryan Miyakawa; Patrick Naulleau; Avideh Zakhor; Ken Goldberg
Show Abstract
Performance of the ASML EUV Alpha Demo Tool
Author(s): Jan V. Hermans; Eric Hendrickx; David Laidler; Christiane Jehoul; Dieter Van Den Heuvel; Anne-Marie Goethals
Show Abstract
EUV lithography at the 22nm technology node
Author(s): Obert Wood; Chiew-Seng Koay; Karen Petrillo; Hiroyuki Mizuno; Sudhar Raghunathan; John Arnold; Dave Horak; Martin Burkhardt; Gregory McIntyre; Yunfei Deng; Bruno La Fontaine; Uzo Okoroanyanwu; Tom Wallow; Guillaume Landie; Theodorus Standaert; Sean Burns; Christopher Waskiewicz; Hirohisa Kawasaki; James H.-C. Chen; Matthew Colburn; Bala Haran; Susan S.-C. Fan; Yunpeng Yin; Christian Holfeld; Jens Techel; Jan-Hendrik Peters; Sander Bouten; Brian Lee; Bill Pierson; Bart Kessels; Robert Routh; Kevin Cummings
Show Abstract
Applicability of extreme ultraviolet lithography to fabrication of half pitch 35nm interconnects
Author(s): Hajime Aoyama; Yuusuke Tanaka; Kazuo Tawarayama; Naofumi Nakamura; Eiichi Soda; Noriaki Oda; Yukiyasu Arisawa; Taiga Uno; Takashi Kamo; Kentaro Matsunaga; Daisuke Kawamura; Toshihiko Tanaka; Hiroyuki Tanaka; Shuichi Saito; Ichiro Mori
Show Abstract
Process liability evaluation for beyond 22nm node using EUVL
Author(s): Kazuo Tawarayama; Hajime Aoyama; Kentaro Matsunaga; Yukiyasu Arisawa; Taiga Uno; Shunko Magoshi; Suigen Kyoh; Yumi Nakajima; Ryoichi Inanami; Satoshi Tanaka; Ayumi Kobiki; Yukiko Kikuchi; Daisuke Kawamura; Kosuke Takai; Koji Murano; Yumi Hayashi; Ichiro Mori
Show Abstract
Multi-technique study of carbon contamination and cleaning of Mo/Si mirrors exposed to pulsed EUV radiation
Author(s): Mark Schürmann; Sergiy Yulin; Viatcheslav Nesterenko; Torsten Feigl; Norbert Kaiser; Boris Tkachenko; Max C. Schürmann
Show Abstract
Removal of surface contamination from EUV mirrors using low-power downstream plasma cleaning
Author(s): Christopher G. Morgan; Patrick P. Naulleau; Senajith B. Rekawa; Paul E. Denham; Brian H. Hoef; Michael S. Jones; Ronald Vane
Show Abstract
Contamination study on EUV exposure tools using SAGA light source (SAGA-LS)
Author(s): K. Murakami; T. Yamaguchi; A. Yamazaki; N. Kandaka; M. Shiraishi; S. Matsunari; T. Aoki; S. Kawata
Show Abstract
Characterization of EUV optics contamination due to photoresist related outgassing
Author(s): I. Pollentier; A.-M. Goethals; R. Gronheid; J. Steinhoff; J. Van Dijk
Show Abstract
Wavelength dependence of carbon contamination on mirrors with different capping layers
Author(s): Petros Thomas; Leonid Yankulin; Yashdeep Khopkar; Rashi Garg; Chimaobi Mbanaso; Alin Antohe; Yu-Jen Fan; Gregory Denbeaux; Samir Aouadi; Vibhu Jindal; Andrea Wüest
Show Abstract
Analysis and characterization of contamination in EUV reticles
Author(s): Uzodinma Okoroanyanwu; Kornelia Dittmar; Torsten Fahr; Tom Wallow; Bruno La Fontaine; Obert Wood; Christian Holfeld; Karsten Bubke; Jan-Hendrik Peters
Show Abstract
Improvement of EUV mask defect printability evaluation
Author(s): Noriaki Takagi; Hiroyuki Shigemura; Tsuyoshi Amano; Takashi Kamo; Osamu Suga
Show Abstract
Holographic method for detecting amplitude and phase-shift errors and features in EUV ML reticle blanks
Author(s): David Nijkerk; Norbert Koster; Eddy van Brug; Diederik Maas
Show Abstract
Compensation methods for buried defects in extreme ultraviolet lithography masks
Author(s): Chris H. Clifford; Tina T. Chan; Andrew R. Neureuther
Show Abstract
Stochastic simulation of photon scattering for EUV mask defect inspection
Author(s): Ting-Hang Pei; Kuen-Yu Tsai; Jia-Han Li
Show Abstract
Particle protection capability of SEMI-compliant EUV-pod carriers
Author(s): George Huang; Long He; John Lystad; Tom Kielbaso; Cecilia Montgomery; Frank Goodwin
Show Abstract
Assessing out-of-band flare effects at the wafer level for EUV lithography
Author(s): Simi A. George; Patrick P. Naulleau; Charles D. Kemp; Paul E Denham; Senajith Rekawa
Show Abstract
EUV modeling accuracy and integration requirements for the 16nm node
Author(s): Lena Zavyalova; Irene Su; Stephen Jang; Jonathan Cobb; Brian Ward; Jacob Sorensen; Hua Song; Weimin Gao; Kevin Lucas; Gian F. Lorusso; Eric Hendrickx
Show Abstract
Identification, modeling, and observation of disturbing effects in EUV interferometer lithography
Author(s): M. Saib; M. Besacier; C. Constancias; P. Michallon
Show Abstract
Flare modeling and calculation on EUV optics
Author(s): M. Shiraishi; T. Oshino; K. Murakami; H. Chiba
Show Abstract
Practical flare compensation strategy for DRAM device
Author(s): Chang-Moon Lim; Jun-Taek Park; James Moon; Sunyoung Koo; Yoonsuk Hyun; Hyeong Soo Kim; Donggyu Yim; Sung-Ki Park
Show Abstract
Fabrication of 35nm via-hole patterns for interconnect test chips with EUV lithography
Author(s): Yuusuke Tanaka; Hajime Aoyama; Kazuo Tawarayama; Shunko Magoshi; Daisuke Kawamura; Kentaro Matsunaga; Takashi Kamo; Yukiyasu Arisawa; Taiga Uno; Hiroyuki Tanaka; Naofumi Nakamura; Eiichi Soda; Noriaki Oda; Shuichi Saito; Ichiro Mori
Show Abstract
Characterization of the clamp pressure of electrostatic chucks
Author(s): M. Ziemann; S. Voss; O. Baldus; V. Schmidt
Show Abstract
Mask roughness induced LER: a rule of thumb
Author(s): Brittany M. McClinton; Patrick P. Naulleau
Show Abstract
Mask roughness and its implications for LER at the 22- and 16nm nodes
Author(s): Patrick P. Naulleau; Simi A. George; Brittany M. McClinton
Show Abstract
The effect of line roughness on the reconstruction of line profiles for EUV masks from EUV scatterometry
Author(s): Akiko Kato; Frank Scholze
Show Abstract
Electrostatic chucking of EUVL masks: coefficients of friction
Author(s): Gerhard Kalkowski; Christian Semmler; Stefan Risse; Thomas Peschel; Christoph Damm; Sandra Müller; René Bauer
Show Abstract
Influence of mask surface roughness on 22nm node extreme ultraviolet lithography
Author(s): Eun-Jin Kim; Jee-Hye You; Seoung-Sue Kim; Han-Ku Cho; Jinho Ahn; Ilsin An; Hye-Keun Oh
Show Abstract
A study of reticle non-flatness induced image placement error contributions in EUV lithography
Author(s): Sudhar Raghunathan; Obert Wood; Pradeep Vukkadala; Roxann Engelstad; Brian Lee; Sander Bouten; Thomas Laursen; John Zimmerman; Jaewoong Sohn; John Hartley
Show Abstract
Photon flux requirements for EUV reticle imaging microscopy in the 22- and 16nm nodes
Author(s): Daniel T. Wintz; Kenneth A. Goldberg; Iacopo Mochi; Sungmin Huh
Show Abstract
Development of an ultrasonic system for super-precise measurement of zero-CTE temperature of EUVL-grade TiO2-SiO2 ultra-low-expansion glasses
Author(s): Jun-ichi Kushibiki; Mototaka Arakawa; Yuji Ohashi; Toshio Sannomiya; Yuko Maruyama
Show Abstract
Damage testing of EUV optics and sensors using focused radiation from a table-top LPP source
Author(s): Klaus Mann; Frank Barkusky; Armin Bayer; Bernhard Flöter; Peter Grossmann
Show Abstract
Characterization of the polarization properties of PTB's EUV reflectometry system
Author(s): Christian Laubis; Annett Kampe; Christian Buchholz; Andreas Fischer; Jana Puls; Christian Stadelhoff; Frank Scholze
Show Abstract
EUV-multilayers on grating-like topographies
Author(s): A. J. R. van den Boogaard; E. Louis; K. A. Goldberg; I. Mochi; F. Bijkerk
Show Abstract
High reflectance multilayers for EUVL HVM-projection optics
Author(s): E. Louis; E. D. van Hattum; S. Alonso van der Westen; P. Sallé; K. T. Grootkarzijn; E. Zoethout; F. Bijkerk; G. von Blanckenhagen; S. Müllender
Show Abstract
Corner rounding in EUV photoresist: tuning through molecular weight, PAG size, and development time
Author(s): Christopher N. Anderson; Joe Daggett; Patrick P. Naulleau
Show Abstract
Absorption and loss of film thickness in photoresists and underlayer materials upon irradiation at 13.5 nm
Author(s): Grace H. Ho; Fu-H. Kang; Huang-W. Fu; Yu-H. Shih; Hok-S. Fung; Wan-P. Ku; Yu-S. Cheng; Pei-J. Wu
Show Abstract
Challenges of EUVL resist process toward practical application
Author(s): Shinichi Ito; Yukiko Kikuchi; Daisuke Kawamura; Eishi Shiobara; Keiichi Tanaka; Hitoshi Kosugi; Junichi Kitano; Takayuki Toshima
Show Abstract
Evaluations of EUV resist outgassing by gas chromatography mass spectrometry (GC-MS)
Author(s): Hiroaki Oizumi; Kazuyuki Matsumaro; Julius Santillan; Toshiro Itani
Show Abstract
Measuring resist-induced contrast loss using EUV interference lithography
Author(s): Andreas Langner; Harun H. Solak; Roel Gronheid; Eelco van Setten; Vaida Auzelyte; Yasin Ekinci; Koen van Ingen Schenau; Kees Feenstra
Show Abstract
Measurement of EUV resists performances RLS by DUV light source
Author(s): Jeongsik Kim; Jae-Woo Lee; Deogbae Kim; Jaehyun Kim
Show Abstract
Study of post-develop defect on typical EUV resist
Author(s): Masahiko Harumoto; Kazuhito Shigemori; Akihiro Hisai; Masaya Asai; Koji Kaneyama
Show Abstract
Further investigation of EUV process sensitivities for wafer track processing
Author(s): Neil Bradon; K. Nafus; H. Shite; J. Kitano; H. Kosugi; M. Goethals; S. Cheng; J. Hermans; E. Hendrickx; B. Baudemprez; D. Van Den Heuvel
Show Abstract
Cobalt-containing polymers as patterning assist layers in extreme ultraviolet lithography
Author(s): Georgeta Masson
Show Abstract
Development of novel positive-tone resists for EUVL
Author(s): Takanori Owada; Hideaki Shiotani; Kayoko Aoyama; Takashi Kashiwamura; Mitsuru Shibata; Testuro Takeya; Hiroaki Oizumi; Toshiro Itani
Show Abstract
Alternative resist processes for LWR reduction in EUVL
Author(s): Koji Kaneyama; Kentaro Matsunaga; Gousuke Shiraishi; Julius Joseph Santillan; Toshiro Itani
Show Abstract
Scissionable polymer resists for extreme ultraviolet lithography
Author(s): Yoichi Ogata; Georgeta Masson; Yoshi Hishiro; James M. Blackwell
Show Abstract
Comparison of EUV spectral and ion emission features from laser-produced Sn and Li plasmas
Author(s): R. W. Coons; D. Campos; M. Crank; S. S. Harilal; A. Hassanein
Show Abstract
Time resolved studies of laser-produced plasmas of tin
Author(s): T. McCormack; E. Scally; I. Kambalii
Show Abstract
Laser-produced plasma light source for EUVL
Author(s): Igor V. Fomenkov; Alex I. Ershov; William N. Partlo; David W. Myers; Richard L. Sandstrom; Norbert R. Böwering; Georgiy O. Vaschenko; Oleh V. Khodykin; Alexander N. Bykanov; Shailendra N. Srivastava; Imtiaz Ahmad; Chirag Rajyaguru; Daniel J. Golich; Silvia De Dea; Richard R. Hou; Kevin M. O'Brien; Wayne J. Dunstan; David C. Brandt
Show Abstract
High brightness EUV light source modeling
Author(s): Sergey V. Zakharov; Peter Choi; Vasily S. Zakharov
Show Abstract
High brightness EUV light sources for actinic metrology
Author(s): Peter Choi; Sergey V. Zakharov; Raul Aliaga-Rossel; Aldrice Bakouboula; Jeremy Bastide; Otman Benali; Philippe Bove; Michèle Cau; Grainne Duffy; Wafa Kezzar; Blair Lebert; Keith Powell; Ouassima Sarroukh; Luc Tantart; Edmund Wyndham; Clement Zaepffel; Vasily S. Zakharov
Show Abstract
Present status of laser-produced plasma EUV light source
Author(s): Hitoshi Nagano; Tamotsu Abe; Shinji Nagai; Masaki Nakano; Yoshihiko Akanuma; Shin Nakajima; Kouji Kakizaki; Akira Sumitani; Junichi Fujimoto; Hakaru Mizoguchi
Show Abstract
Modeling of atomic and plasmas processes in the LPP and LA-DPP EUV source
Author(s): Akira Sasaki; Katsunobu Nishihara; Atsushi Sunahara; Hiroyuki Furukawa; Takeshi Nishikawa; Fumihiro Koike
Show Abstract
Tin ion and neutral dynamics within an LPP EUV source
Author(s): Bob Rollinger; Oran Morris; Ndaona Chokani; Reza S. Abhari
Show Abstract
Aerial image improvements on the Intel MET
Author(s): Roman Caudillo; Todd Younkin; Steve Putna; Alan Myers; Yashesh Shroff; Terence Bacuita; Grant Kloster; Erik Sohmen
Show Abstract
Polycarbonate based nonchemically amplified photoresists for extreme ultraviolet lithography
Author(s): Idriss Blakey; Anguang Yu; James Blinco; Kevin S. Jack; Heping Liu; Michael Leeson; Wang Yueh; Todd Younkin; Andrew K. Whittaker
Show Abstract
A simple null-field ellipsometric imaging system (NEIS) for in-situ monitoring of EUV-induced deposition on EUV optics
Author(s): Rashi Garg; Nadir Faradzhev; Shannon Hill; Lee Richter; P. S. Shaw; R. Vest; T. B. Lucatorto
Show Abstract

© SPIE. Terms of Use
Back to Top