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Proceedings of SPIE Volume 7274

Optical Microlithography XXII
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Volume Details

Volume Number: 7274
Date Published: 13 March 2009
Softcover: 117 papers (1206) pages
ISBN: 9780819475275

Table of Contents
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Front Matter: Volume 7274
Author(s): Proceedings of SPIE
Alternative optical technologies: more than curiosities?
Author(s): Bruce W. Smith
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Overcoming the challenges of 22-nm node patterning through litho-design co-optimization
Author(s): Martin Burkhardt; J. C. Arnold; Z. Baum; S. Burns; J. Chang; J. Chen; J. Cho; V. Dai; Y. Deng; S. Halle; G. Han; S. Holmes; D. Horak; S. Kanakasabapathy; R. H. Kim; A. Klatchko; C. S. Koay; A. Krasnoperova; Y. Ma; E. McLellan; K. Petrillo; S. Schmitz; C. Tabery; Y. Yin; L. Zhuang; Y. Zou; J. Kye; V. Paruchuri; S. Mansfield; C. Spence; M. Colburn
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Improved model predictability by machine data in computational lithography and application to laser bandwidth tuning
Author(s): Stefan Hunsche; Qian Zhao; Xu Xie; Robert Socha; Hua-Yu Liu; Peter Nikolsky; Anthony Ngai; Paul van Adrichem; Michael Crouse; Ivan Lalovic
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Contact mask optimization and SRAF design
Author(s): Uwe P. Schroeder; Cyrus Tabery; Bradley Morgenfeld; Hideki Kanai
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A study of source and mask optimization for ArF scanners
Author(s): Tomoyuki Matsuyama; Toshiharu Nakashima; Tomoya Noda
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Intensive optimization of masks and sources for 22nm lithography
Author(s): Alan E. Rosenbluth; David O. Melville; Kehan Tian; Saeed Bagheri; Jaione Tirapu-Azpiroz; Kafai Lai; Andreas Waechter; Tadanobu Inoue; Laszlo Ladanyi; Francisco Barahona; Katya Scheinberg; Masaharu Sakamoto; Hidemasa Muta; Emily Gallagher; Tom Faure; Michael Hibbs; Alexander Tritchkov; Yuri Granik
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Experimental result and simulation analysis for the use of pixelated illumination from source mask optimization for 22nm logic lithography process
Author(s): Kafai Lai; Alan E. Rosenbluth; Saeed Bagheri; John Hoffnagle; Kehan Tian; David Melville; Jaione Tirapu-Azpiroz; Moutaz Fakhry; Young Kim; Scott Halle; Greg McIntyre; Alfred Wagner; Geoffrey Burr; Martin Burkhardt; Daniel Corliss; Emily Gallagher; Tom Faure; Michael Hibbs; Donis Flagello; Joerg Zimmermann; Bernhard Kneer; Frank Rohmund; Frank Hartung; Christoph Hennerkes; Manfred Maul; Robert Kazinczi; Andre Engelen; Rene Carpaij; Remco Groenendijk; Joost Hageman; Carsten Russ
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Enabling process window improvement at 45nm and 32nm with free-form DOE illumination
Author(s): Tamer H. Coskun; Apo Sezginer; Vishnu Kamat; Michiel Kruger; Bayram Yenikaya; James Carriere; Jared Stack; Marc Himel
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Benefits and trade-offs of global source optimization in optical lithography
Author(s): Kehan Tian; Azalia Krasnoperova; David Melville; Alan E. Rosenbluth; Dario Gil; Jaione Tirapu-Azpiroz; Kafai Lai; Saeed Bagheri; Chia-chen Chen; Bradley Morgenfeld
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Advanced self-aligned double patterning development for sub-30-nm DRAM manufacturing
Author(s): Weicheng Shiu; Hung Jen Liu; Jan Shiun Wu; Tsu-Li Tseng; Chun Te Liao; Chien Mao Liao; Jerry Liu; Troy Wang
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Process step reduction at negative tone spacer patterning technique using developer soluble bottom ARC
Author(s): Woo-Yung Jung; Jae-Doo Eom; Sung-Min Jeon; Ji-Hyun Lee; Byung-Seok Lee; Jin-Woong Kim
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Gridded design rule scaling: taking the CPU toward the 16nm node
Author(s): Christopher Bencher; Huixiong Dai; Yongmei Chen
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Split, overlap/stitching, and process design for double patterning considering local reflectivity variation by using rigorous 3D wafer-topography/lithography simulation
Author(s): Itaru Kamohara; Thomas Schmoeller
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Advances and challenges in dual-tone development process optimization
Author(s): Carlos Fonseca; Mark Somervell; Steven Scheer; Wallace Printz; Kathleen Nafus; Shinichi Hatakeyama; Yuhei Kuwahara; Takafumi Niwa; Sophie Bernard; Roel Gronheid
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New process proximity correction using neural network in spacer patterning technology
Author(s): Fumiharu Nakajima; Toshiya Kotani; Satoshi Tanaka; Masafumi Asano; Soichi Inoue
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32nm and below logic patterning using optimized illumination and double patterning
Author(s): Michael C. Smayling; Valery Axelrad
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Analysis of topography effects on lithographic performance in double patterning applications
Author(s): J. Siebert; P. Brooker; T. Schmoeller; T. Klimpel
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Investigating the impact of topography on pitch splitting double patterning using rigorous physical simulation
Author(s): Stewart A. Robertson; Trey Graves; John J. Biafore; Mark D. Smith
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Ultimate contact hole resolution using immersion lithography with line/space imaging
Author(s): V. Truffert; J. Bekaert; F. Lazzarino; M. Maenhoudt; A. Miller; M. Moelants; T. Wu
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Efficient simulation and optimization of wafer topographies in double patterning
Author(s): Feng Shao; Peter Evanschitzky; Tim Fühner; Andreas Erdmann
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Dense lines created by spacer DPT scheme: process control by local dose adjustment using advanced scanner control
Author(s): Jo Finders; Mircea Dusa; Bert Vleeming; Timon Fliervoet; Birgitt Hepp; Henry Megens; Remco Groenendijk; John Quaedackers; Evert Mos; Christian Leewis; Frank Bornebroek; Mireille Maenhoudt; Marc Leblans; Tom Vandeweyer; Gayle Murdoch; Efrain Altamirano Sanchez
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Focus and dose characterization of immersion photoclusters
Author(s): T. A. Brunner; D. Corliss; T. Wiltshire; C. P. Ausschnitt
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Scanner-dependent optical proximity effects
Author(s): Jacek K. Tyminski; Tomoyuki Matsuyama; Toshiharu Nakashima; Ryuichi Inoue
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Challenges and solutions in the calibration of projection lens pupil-image metrology tools
Author(s): Steve Slonaker; Bryan Riffel; Hisashi Nishinaga
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Impact of CD and overlay errors on double-patterning processes
Author(s): Céline Lapeyre; Sébastien Barnola; Isabelle Servin; Stéphanie Gaugirana; Vincent Salvetat; Nobutaka Magome; Andrew J. Hazelton; Martin McCallum
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Achieving overlay budgets for double patterning
Author(s): Andrew J. Hazelton; Nobutaka Magome; Shinji Wakamoto; Akira Tokui; Céline Lapeyre; Sébastien Barnola; Guillaume Jullien; Vincent Salvetat
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Innovative pattern matching method considering process margin and scanner design information
Author(s): Koichiro Tsujita; Koji Mikami; Hiroyuki Ishii; Ryo Nakayama; Mikio Arakawa; Takehiro Ueno; Shogo Fujie; Kazuhiro Takahashi
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A new method for post-etch OPC modeling to compensate for underlayer effects from integrated wafers
Author(s): Chandra Sarma; Amr Abdo; Derren Dunn; Daniel Fischer; Klaus Herold; Scott Mansfield; Len Tsou
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Optimal setting strategy for kernel-based OPC simulation engines
Author(s): Katsuyoshi Kodera; Satoshi Tanaka; Toshiya Kotani; Soichi Inoue
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Improving yield through the application of process window OPC
Author(s): Jaione Tirapu Azpiroz; Azalia Krasnoperova; Shahab Siddiqui; Kenneth Settlemyer; Ioana Graur; Ian Stobert; James M. Oberschmidt
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Etch aware optical proximity correction: a first step toward integrated pattern engineering
Author(s): D. N. Dunn; S. Mansfield; I. Stobert; C. Sarma; G. Lembach; J. Liu; K. Herold
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Integrating assist feature print fixing with OPC
Author(s): Levi D. Barnes; Amyn Poonawala; Benjamin D. Painter; Andrew M. Jost; TJ Takei; Yong Li
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Double-patterning-friendly OPC
Author(s): Xiaohai Li; Gerry Luk-Pat; Chris Cork; Levi Barnes; Kevin Lucas
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Calibrating OPC model with full CD profile data for 2D and 3D patterns using scatterometry
Author(s): Aasutosh D. Dave; Oleg Kritsun; Yunfei Deng; Kenji Yoshimoto; Jie Li; Jiangtao Hu
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Impact of modelisation pixel size on OPC consistency
Author(s): Franck Foussadier; Emek Yesilada; Jean-Christophe Le Denmat; Yorick Trouiller; Vincent Farys; Frédéric Robert; Gurwan Kerrien; Christian Gardin; Loic Perraud; Florent Vautrin; Alexandre Villaret; Catherine Martinelli; Jonathan Planchot; Jean Luc Di-Maria; Mazen Saied; Mame Kouna Top
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OPC simplification and mask cost reduction using regular design fabrics
Author(s): Tejas Jhaveri; Ian Stobert; Lars Liebmann; Paul Karakatsanis; Vyacheslav Rovner; Andrzej Strojwas; Larry Pileggi
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Resist development modeling for OPC accuracy improvement
Author(s): Yongfa Fan; Lena Zavyalova; Yunqiang Zhang; Charlie Zhang; Kevin Lucas; Brad Falch; Ebo Croffie; Jianliang Li; Lawrence Melvin; Brian Ward
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OPC for reduced process sensitivity in the double patterning flow
Author(s): Mohamed Gheith; Le Hong; James Word
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Through-focus pattern matching applied to double patterning
Author(s): Juliet Rubinstein; Andrew R. Neureuther
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A novel methodology for hybrid mask AF generation for 22 and 15nm technology
Author(s): Yi Zou; Luigi Capodieci; Cyrus Tabery
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A computational technique to optimally design in-situ diffractive elements: applications to projection lithography at the resist resolution limit
Author(s): Gonzalo R. Feijóo; Jaione Tirapu-Azpiroz; Alan E. Rosenbluth; Assad A. Oberai; Jayanth Jagalur Mohan; Kehan Tian; David Melville; Dario Gil; Kafai Lai
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Feasibility of ultra-low k1 lithography for 28nm CMOS node
Author(s): Shoji Mimotogi; Kazuhiro Takahata; Takashi Murakami; Seiji Nagahara; Kazuhiro Takeda; Masaki Satake; Yosuke Kitamura; Tomoko Ojima; Hiroharu Fujise; Yuriko Seino; Tatsuhiko Ema; Hiroki Yonemitsu; Manabu Takakuwa; Shinichiro Nakagawa; Takuya Kono; Masafumi Asano; Suigen Kyoh; Hideaki Harakawa; Akiko Nomachi; Tatsuya Ishida; Shunsuke Hasegawa; Katsura Miyashita; Makoto Tominaga; Soichi Inoue
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Design of resist stacks with antireflection coatings from the viewpoint of focus budget
Author(s): Satoshi Nagai; Kazuya Sato
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An innovative platform for high-throughput high-accuracy lithography using a single wafer stage
Author(s): Yuichi Shibazaki; Hirotaka Kohno; Masato Hamatani
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Novel approaches to meet the requirements for double patterning
Author(s): Takeaki Ebihara; Toshiyuki Yoshihara; Hiroshi Morohoshi; Tadamasa Makiyama; Yoshio Kawanobe; Koichiro Tsujita; Toshiyuki Kojima; Kazuhiro Takahashi
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Extending single-exposure patterning towards 38-nm half-pitch using 1.35 NA immersion
Author(s): Igor Bouchoms; Andre Engelen; Jan Mulkens; Herman Boom; Richard Moerman; Paul Liebregts; Roelof de Graaf; Marieke van Veen; Patrick Thomassen; Wolfgang Emer; Frank Sperling
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Advanced aberration control in projection optics for double patterning
Author(s): Toshiyuki Yoshihara; Takashi Sukegawa; Nobuhiko Yabu; Masatoshi Kobayashi; Tadashi Arai; Tsuyoshi Kitamura; Atsushi Shigenobu; Yasuo Hasegawa; Kazuhiro Takahashi
Show Abstract
Polarization aberration control for ArF projection lenses
Author(s): Tomoyuki Matsuyama; Naonori Kita
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Modeling laser bandwidth for OPC applications
Author(s): Christian Zuniga; Kostas Adam; Michael Lam; Ivan Lalovic; Peter De Bisschop
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Control and reduction of immersion defectivity for yield enhancement at high volume production
Author(s): Katsushi Nakano; Rei Seki; Toshiyuki Sekito; Masato Yoshida; Tomoharu Fujiwara; Yasuhiro Iriuchijima; Soichi Owa
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Imaging solutions for the 22nm node using 1.35NA
Author(s): André Engelen; Melchior Mulder; Igor Bouchoms; Steve Hansen; Anita Bouma; Anthony Ngai; Marieke van Veen; Jörg Zimmermann
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Speckle in optical lithography and the influence on line width roughness
Author(s): Oscar Noordman; Andrey Tychkov; Jan Baselmans; James Tsacoyeanes; Gary Politi; Michael Patra; Vladan Blahnik; Manfred Maul
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Enabling the lithography roadmap: an immersion tool based on a novel stage positioning system
Author(s): Fred de Jong; Bert van der Pasch; Tom Castenmiller; Bert Vleeming; Richard Droste; Frank van de Mast
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A CDU comparison of double patterning process options using Monte Carlo simulation
Author(s): Josh Hooge; Shinichi Hatakeyama; Kathleen Nafus; Steven Scheer; Philippe Foubert; Shaunee Cheng; Philippe Leray
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Exploration of linear and non-linear double exposure techniques by simulation
Author(s): John S. Petersen; Robert T. Greenway; Tim Fühner; Peter Evanschitzky; Feng Shao; Andreas Erdmann
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Integration of dry etching steps for double patterning and spacer patterning processes
Author(s): S. Barnola; C. Lapeyre; I. Servin; C. Arvet; P. Maury; L. Mage
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Analysis of higher order pitch division for sub-32nm lithography
Author(s): Peng Xie; Bruce W. Smith
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32 nm half pitch formation with high numerical aperture single exposure
Author(s): Minhee Jung; Joon-Min Park; Moonseok Kim; Sukjoon Hong; Jaisoon Kim; In-Ho Park; Hye-Keun Oh
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High index 193 nm immersion lithography: the beginning or the end of the road
Author(s): Paul A. Zimmerman; Bryan J. Rice; Emil C. Piscani; Vladimir Liberman
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Birefringence issues with uniaxial crystals as last lens elements for high-index immersion lithography
Author(s): John H. Burnett; Eric C. Benck; Simon G. Kaplan; Gabriel Y. Sirat; Chris Mack
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Multiple layer CD control treatment
Author(s): Anka Birnstein; Christoph Röpke; Martin Sczyrba; Rainer Pforr; Mario Hennig; Guy Ben-Zvi; Erez Graitzer; Avi Cohen
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Smart data filtering for enhancement of model accuracy
Author(s): Shady Abdelwahed; Jae Hyun Kang; Jaeyoung Choi; Jong Doo Kim; Hyesung Lee; Sungho Jun; Youngmi Kim
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Analysis and modeling of photomask edge effects for 3D geometries and the effect on process window
Author(s): Marshal A. Miller; Andrew R. Neureuther
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Transformation procedure from sparse OPC model to grid-based model
Author(s): Qingwei Liu; Liguo Zhang
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Image-assistant OPC model calibration on 65nm node contact layer
Author(s): Y. Y. Tsai; S. L. Tsai; Fred Lo; Elvis Yang; T. H. Yang; K. C. Chen; Chih-Yuan Lu
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Design driven test patterns for OPC models calibration
Author(s): Mohamed Al-Imam
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Model-based retarget for 45nm node and beyond
Author(s): Ellyn Yang; Cheng He Li; Xiao Hui Kang; Eric Guo
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Scanner OPC signatures: automatic vendor-to-vendor OPE matching
Author(s): Stephen P. Renwick
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Pattern matching assisted modeling test pattern generation
Author(s): Le Hong; Qiao Li; Jian Rao
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Model based mask process correction and verification for advanced process nodes
Author(s): Timothy Lin; Tom Donnelly; Steffen Schulze
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Novel OPC method to create sub 45nm contact hole using design based metrology
Author(s): Dong-Jin Lee; Se-young Oh; Jong-cheon Park; Jin-young Choi; Jungchan Kim; Cheolkyun Kim; Donggyu Yim
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Abbe-PCA (Abbe-Hopkins): microlithography aerial image analytical compact kernel generation based on principle component analysis
Author(s): Meng-Fong Tsai; Shi-Jei Chang; Charlie Chung Ping Chen; Lawerence S. Melvin
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Automatic SRAF size optimization during OPC
Author(s): Srividya Jayaram; James Word
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OPC segmentation: dilemma between degree-of-freedom and stability with some relieves
Author(s): Y. P. Tang; J. H. Feng; M. H. Chih; C. K. Tsai; W. C. Huang; C. C. Kuo; R. G. Liu; H. T. Lin; Y. C. Ku
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Efficient hardware usage in the mask tapeout flow
Author(s): Mathias Boman; Travis Brist; Yongdong Wang
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Pre-OPC layout decomposition for improved image fidelity
Author(s): Shady Abdelwahed; Rami Fathy; Jae Hyun Kang; Jong Doo Kim; Youngmi Kim
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Next generation siloxane-based Bottom Anti-Reflective Coating (BARC) formulations with selective strip rates and required optical properties
Author(s): Sudip Mukhopadhyay; Joseph Kennedy; Yamini Pandey; Preeti Amin; Jaswinder Gill
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Defectivity improvement by modified wafer edge treatment in immersion lithography
Author(s): Masafumi Fujita; Takao Tamura; Naka Onoda; Takayuki Uchiyama
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Thin hardmask patterning stacks for the 22-nm node
Author(s): Zhimin Zhu; Emil Piscani; Yubao Wang; Jan Macie; Charles J. Neef; Brian Smith
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Arbitrary three-dimensional micro-fabrication by polymer grayscale lithography
Author(s): Li Jiang; Pranay Nath; N. S. Korivi
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0.13µm BiCMOS emitter window lithography with KrF scanners
Author(s): Li-Heng Chou; Neil S. Patel; Patrick M. McCarthy
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Patterning of SU-8 resist with digital micromirror device (DMD) maskless lithography
Author(s): Tao Wang; Marzia Quaglio; Fabrizio Pirri; Yang-Chun Cheng; David Busacker; Franco Cerrina
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Process transfer strategies between ASML immersion scanners
Author(s): Yuan He; Peter Engblom; Jianming Zhou; Eric Janda; Anton Devilliers; Bernd Geh; Erik Byers; Jasper Menger; Steve Hansen; Mircea Dusa
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Model-based scanner tuning in a manufacturing environment
Author(s): C. Y. Shih; R. C. Peng; T. C. Chien; Y. W. Guo; J. Y. Lee; C. L. Chang; P. C. Huang; H. H. Liu; H. J. Lee; John Lin; K. W. Chang; C. P. Yeh; W. J. Shao; H. Cao; A. Bruguier; X. Xie; C. H. Chang; R. Aldana; Y. Cao; R. Goossens; Simon Hsieh
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32nm node device laser-bandwidth OPE sensitivity and process matching
Author(s): Kazuyuki Yoshimochi; Takao Tamura; Takaaki Kuribayashi; Takayuki Uchiyama; Nigel Farrar; Toshihiro Oga; James Bonafede
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New approach to determine best beam focus
Author(s): Christian Zuniga; Tamer M. Tawfik
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High-order distortion effects induced by extreme off-axis illuminations at hyper NA lithography
Author(s): Pierluigi Rigolli; Gianfranco Capetti; Elio De Chiara; Leonardo Amato; Umberto Iessi; Paolo Canestrari; Christine Llorens; Sanne Smit; Lionel Brige; Johannes Plauth
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Line end shortening and corner rounding for novel off-axis illumination source shapes
Author(s): Moh Lung Ling; Gek Soon Chua; Qunying Lin; Cho Jui Tay; Chenggen Quan
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The analysis of polarization characteristics on 40nm memory devices
Author(s): Minae Yoo; Chanha Park; Taejun You; Hyunjo Yang; Young-Hong Min; Ki-Yeop Park; Donggyu Yim; Sungki Park
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22 nm technology node active layer patterning for planar transistor devices
Author(s): Ryoung-Han Kim; Steven Holmes; Scott Halle; Vito Dai; Jason Meiring; Aasutosh Dave; Matthew E. Colburn; Harry J. Levinson
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C-quad polarized illumination for back end thin wire: moving beyond annular illumination regime
Author(s): Sohan Singh Mehta; Hyung-Rae Lee; Bassem Hamieh; Chidam Kallingal; Itty Matthew; Ramya Viswanathan; Derren N. Dunn
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Pushing the limits of RET with different illumination optimization methods
Author(s): Aasutosh D. Dave; Ryoung-Han Kim
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A proposed image intensity expressing local irradiance
Author(s): Shuji Nakao; Itaru Kanai; Shinroku Maejima; Mitsuru Okuno; Naohisa Tamada; Junjiro Sakai; Akira Imai; Tetsuro Hanawa; Kazuyuki Suko
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The divergence of image and resist process metrics
Author(s): John J. Biafore; Sanjay Kapasi; Stewart A. Robertson; Mark D. Smith
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Advanced model and fast algorithm for aerial image computation with well controlled accuracy
Author(s): V. Manuylov
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A novel fast 3D resist simulation method using Chebyshev expansion
Author(s): Masanori Takahashi; Satoshi Tanaka; Shoji Mimotogi; Soichi Inoue
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Modeling mask scattered field at oblique incidence
Author(s): Tamer M. Tawfik; Ahmed Hisham Morshed; Diaa Khalil
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Partially coherent image computation using elementary functions
Author(s): Arlene Smith; Anna Burvall; Christopher Dainty
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Chemically amplified resist modeling in OPC
Author(s): Xin Zheng; Jason Huang; Fred Kuo; Aram Kazarian; Fook Chin; Yongfa Fan
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High-speed microlithography aerial image contour generation without images
Author(s): Szu-kai Lin; Charlie Chung Ping Chen; Lawerence S. Melvin
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PSM design for inverse lithography with partially coherent illumination
Author(s): Xu Ma; Gonzalo R. Arce
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Manufacturability of ILT patterns in low-NA 193nm environment
Author(s): ChinTeong Lim; Vlad Temchenko; Ingo Meusel; Dieter Kaiser; Jens Schneider; Martin Niehoff
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Inverse vs. traditional OPC for the 22nm node
Author(s): James Word; Yuri Granik; Marina Medvedeva; Sergei Rodin; Luigi Capodieci; Yunfei Deng; Jongwook Kye; Cyrus Tabery; Kenji Yoshimoto; Yi Zou; Hesham Diab; Mohamed Gheith; Mohamed Habib; Cynthia Zhu
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Innovative pixel-inversion calculation for model-based sub-resolution assist features and optical proximity correction
Author(s): Jue-Chin Yu; Peichen Yu; Hsueh-Yung Chao
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Source optimization for three-dimensional image designs through film stacks
Author(s): David O. S. Melville; Alan E. Rosenbluth; Kehan Tian; Dario Goldfarb; Stefan Harrer; Matthew Colburn
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A manufacturing lithographic approach for high density MRAM device using KrF double mask patterning technique
Author(s): Daniel Liu; Tom Zhong; Terry Torng
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Pattern decomposition and process integration of self-aligned double patterning for 30nm node NAND FLASH process and beyond
Author(s): Yi-Shiang Chang; Meng-Feng Tsai; Chia-Chi Lin; Jun-Cheng Lai
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Alignment and overlay improvements for 3x nm and beyond process with CVD sidewall spacer double patterning
Author(s): Huixiong Dai; Chris Bencher; Yongmei Chen; Shiyu Sun; Xumou Xu; Chris Ngai
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Demonstration of 32nm half-pitch electrical testable NAND FLASH patterns using self-aligned double patterning
Author(s): Shiyu Sun; Chris Bencher; Yongmei Chen; Huixiong Dai; Man-Ping Cai; Jaklyn Jin; Pokhui Blanco; Liyan Miao; Ping Xu; Xumou Xu; James Yu; Raymond Hung; Shiany Oemardani; Osbert Chan; Chorng-Ping Chang; Chris Ngai
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Birefringence simulations of annealed ingot of calcium fluoride single crystal: consideration of creep behavior of ingot during annealing process
Author(s): Noriyuki Miyazaki; Hirotaka Ogino; Yuta Kitamura; Toshiro Mabuchi; Teruhiko Nawata
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Cost-effective shrink of semi-critical layers using the TWINSCAN XT:1000H NA 0.93 KrF scanner
Author(s): Frank Bornebroek; Marten de Wit; Wim de Boeij; Gerald Dicker; Jongkyun Hong; Alexander Serebryakov
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Optical performance of laser light source for ArF immersion double patterning lithography tool
Author(s): Katsuhiko Wakana; Hiroaki Tsushima; Shinichi Matsumoto; Masaya Yoshino; Takahito Kumazaki; Hidenori Watanabe; Takeshi Ohta; Satoshi Tanaka; Toru Suzuki; Hiroaki Nakarai; Yasufumi Kawasuji; Akihiko Kurosu; Takashi Matsunaga; Junichi Fujimoto; Hakaru Mizoguchi
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True polarization characteristics of hyper-NA optics excluding impact of measurement system
Author(s): Toru Fujii; Ken-ichi Muramatsu; Noriyuki Matsuo; Yasihiro Ohmura; Masayasu Sawada
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Reliability report of high power injection lock laser light source for double exposure and double patterning ArF immersion lithography
Author(s): Hiroaki Tsushima; Masaya Yoshino; Takeshi Ohta; Takahito Kumazaki; Hidenori Watanabe; Shinichi Matsumoto; Hiroaki Nakarai; Hiroshi Umeda; Yasufumi Kawasuji; Toru Suzuki; Satoshi Tanaka; Akihiko Kurosu; Takashi Matsunaga; Junichi Fujimoto; Hakaru Mizoguchi
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Immersion-cluster uptime enhancement technology toward high-volume manufacturing
Author(s): R. Tanaka; T. Fujiwara; K. Nakano; S. Wakamizu; H. Kyouda
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Lithography line productivity impact using Cymer GLX technology
Author(s): Kevin O'Brien; Wayne Dunstan; Robert Jacques; Daniel Brown
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Enabling high volume manufacturing of double patterning immersion lithography with the XLR 600ix ArF light source
Author(s): Rostislav Rokitski; Vladimir Fleurov; Robert Bergstedt; Hong Ye; Robert Rafac; Robert Jacques; Fedor Trintchouk; Toshihiko Ishihara; Rajasekhar Rao; Theodore Cacouris; Daniel Brown; William Partlo
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