Share Email Print
cover

PROCEEDINGS VOLUME 7273

Advances in Resist Materials and Processing Technology XXVI
For the purchase of this volume in printed format, please visit Proceedings.com

Volume Details

Volume Number: 7273
Date Published: 30 March 2009

Table of Contents
show all abstracts | hide all abstracts
Front Matter: Volume 7273
Author(s): Proceedings of SPIE
Newly developed positive tone resists for Posi/Posi double patterning process
Author(s): Tsuyoshi Nakamura; Masaru Takeshita; Satoshi Maemori; Ryusuke Uchida; Ryoichi Takasu; Katsumi Ohmori
Show Abstract
Engine for characterization of defects, overlay, and critical dimension control for double exposure processes for advanced logic nodes
Author(s): Steven Holmes; Chiew-Seng Koay; Karen Petrillo; Kuang-Jung Chen; Matthew E. Colburn; Jason Cantone; Kenichi Ueda; Andrew Metz; Shannon Dunn; Youri van Dommelen; Michael Crouse; Judy Galloway; Emil Schmitt-Weaver; Aiquin Jiang; Robert Routh; Cherry Tang; Mark Slezak; Sumanth Kini; Tony DiBiase
Show Abstract
Materials for single-etch double patterning process: surface curing agent and thermal cure resist
Author(s): Young C. Bae; Yi Liu; Thomas Cardolaccia; John C. McDermott; Peter Trefonas; Ken Spizuoco; Michael Reilly; Amandine Pikon; Lori Joesten; Gary G. Zhang; George G. Barclay; Julia Simon; Stéphanie Gaurigan
Show Abstract
Double-exposure materials for pitch division with 193nm lithography: requirements, results
Author(s): Robert Bristol; David Shykind; Sungwon Kim; Yan Borodovsky; Evan Schwartz; Courtney Turner; Georgeta Masson; Ke Min; Katherine Esswein; James M. Blackwell; Nikolay Suetin
Show Abstract
Topcoat-free ArF negative tone resist
Author(s): Tomoyuki Ando; Sho Abe; Ryoichi Takasu; Jun Iwashita; Shogo Matsumaru; Ryoji Watanabe; Komei Hirahara; Yujiro Suzuki; Miki Tsukano; Takeshi Iwai
Show Abstract
Correlation of experimental and simulated cure-induced photoresist distortions in double patterning
Author(s): Thomas I. Wallow; Mahidhar Rayasam; Masanori Yamaguchi; Yohei Yamada; Karen Petrillo; Kenji Yoshimoto; Jongwook Kye; Ryoung-Han Kim; Harry J. Levinson
Show Abstract
Fine trench patterns with double patterning and trench shrink technology
Author(s): Satoru Shimura; Masato Kushibiki; Tetsu Kawasaki; Ryo Tanaka; Akira Tokui; Yuuki Ishii
Show Abstract
Double patterning process with freezing technique
Author(s): Goji Wakamatsu; Yusuke Anno; Masafumi Hori; Tomohiro Kakizawa; Michihiro Mita; Kenji Hoshiko; Takeo Shioya; Koichi Fujiwara; Shiro Kusumoto; Yoshikazu Yamaguchi; Tsutomu Shimokawa
Show Abstract
Development of materials and processes for negative tone development toward 32-nm node 193-nm immersion double-patterning process
Author(s): Shinji Tarutani; Tsubaki Hideaki; Sou Kamimura
Show Abstract
Photoresist stabilization for double patterning using 172 nm photoresist curing
Author(s): Thomas I. Wallow; Junyan Dai; Charles R. Szmanda; Hiram Cervera; Chi Truong; Nikolaos Bekiaris; Jong-Wook Kye; Ryoung-Han Kim; Harry J. Levinson; Glen Mori
Show Abstract
DUV-assisted e-beam resist process
Author(s): Wei-Su Chen; Yen-Cheng Li; Ming-Jinn Tsai
Show Abstract
Improved CD uniformity for chemical shrink patterning
Author(s): Lu Chen; Nikolaos Bekiaris; Timothy Michaelson; Glen Mori
Show Abstract
Fabrication of 22-nm poly-silicon gate using resist shrink technology
Author(s): Fumiko Iwao; Satoru Shimura; Tetsu Kawasaki; Masato Kushibiki; Nishimura Eiichi
Show Abstract
Properties of the novel deprotecting unit for next-generation ArF resist polymer
Author(s): Akinori Shibuya; Shuhei Yamaguchi; Yuko Yoshida; Michihiro Shirakawa
Show Abstract
Chemically amplified hybrid resist platform for i-line applications
Author(s): Medhat Toukhy; Margareta Paunescu; Zachary Bogusz; Georg Pawlowski
Show Abstract
Criteria for success in e-beam resists
Author(s): A. E. Zweber; T. Komizo; J. Levin; Z. Benes
Show Abstract
0.30k1 CH delineation with novel image reversal materials
Author(s): J. Hatakeyama; K. Katayama; T. Yoshihara; Y. Kawai; T. Ishihara
Show Abstract
KrF resists and process for implant layers at advanced nodes
Author(s): Hung-Chin Huang; Yong-Fa Huang; Steven Wu; Louis Jang; Sho-Shen Lee; George K. C. Huang; Howard Chen; Chun-Chi Yu; Tomoki Kurihara; Hitoshi Fukiya; Hiromu Yoshida; Yoshihiro Yamamoto
Show Abstract
Process-induced bias: a study of resist design, device node, illumination conditions, and process implications
Author(s): Michael Carcasi; Steven Scheer; Carlos Fonseca; Tsuyoshi Shibata; Hitoshi Kosugi; Yoshihiro Kondo; Takashi Saito
Show Abstract
Microbridge and e-test opens defectivity reduction via improved filtration of photolithography fluids
Author(s): Michael Mesawich; Michael Sevegney; Barry Gotlinsky; Santos Reyes; Patrick Abbott; Jeremy Marzani; Mario Rivera
Show Abstract
Post-develop blob defect reduction
Author(s): Masahiko Harumoto; Sei Negoro; Akihiro Hisai; Michio Tanaka; Glen Mori; Mark Slezak
Show Abstract
Embedded micro/nano channel formation for three-dimensional negative-tone photoresist microstructuring
Author(s): Sang-Kon Kim; Hye-Keun Oh; Young-Dae Jung; Ilsin An
Show Abstract
Analysis of the effect of point-of-use filtration on microbridging defectivity
Author(s): J. Braggin; R. Gronheid; S. Cheng; D. Van Den Heuvel; S. Bernard; P. Foubert; C. Rosslee
Show Abstract
Novel resist for replica preparation of mold for imprint lithography
Author(s): Daisaku Matsukawa; Hiroyuki Wakayama; Kazuyuki Mitsukura; Haruyuki Okamura; Yoshihiko Hirai; Masamitsu Shirai
Show Abstract
Pressure control for reduced microbubble formation
Author(s): Jennifer Braggin
Show Abstract
Productivity improvement in the wafer backside cleaning before exposure
Author(s): S. Nishikido; T. Kitano; Y. Tokunaga; Marlene Strobl; Yu Chen Lin
Show Abstract
Development of novel UV cross-linkable materials for enhancing planarity in via applications via the correlation of simulated and experimental analyses
Author(s): Satoshi Takei; Michael W. Lin; Sangwoong Yoon; Tomoya Ohashi; Yasuyuki Nakajima; C. Grant Willson
Show Abstract
Comparison of thermal flow and chemical shrink processes for 193 nm contact hole patterning
Author(s): Takanori Kudo; Charito Antonio; John Sagan; Srinivasan Chakrapani; Deepa Parthasarathy; Sungeun Hong; Muthiah Thiyagarajan; Yi Cao; Munirathna Padmanaban
Show Abstract
Message to the undecided: using DUV dBARC for 32-nm node implants
Author(s): Hyung-Rae Lee; Irene Y. Popova; JoAnn M. Rolick; Juan-Manuel Gomez; Todd C. Bailey
Show Abstract
Investigation of the foot-exposure impact in hyper-NA immersion lithography when using thin anti-reflective coating
Author(s): Darron Jurajda; Enrico Tenaglia; Jonathan Jeauneau; Danilo De Simone; Zhimin Zhu; Paolo Piazza; Paolo Piacentini; Paolo Canestrari
Show Abstract
Organic underlayer materials with exceptionally high thermal stability
Author(s): Hwan-Sung Cheon; Kyong-Ho Yoon; Min-Soo Kim; Sung Bae Oh; Jee-Yun Song; Nataliya Tokareva; Jong-Seob Kim; Tuwon Chang
Show Abstract
Effects of carbon/hardmask interactions on hardmask performance
Author(s): Charles J. Neef; Brian Smith; Chris James; Zhimin Zhu; Michael Weigand
Show Abstract
Improving the performance of light-sensitive developer-soluble anti-reflective coatings by using adamantyl terpolymers
Author(s): Jim D. Meador; Joyce A. Lowes; Charlyn Stroud; Sherilyn Thomas; Yilin Qiu; Ramil-Marcelo L. Mercado; Victor Pham; Mark Slezak
Show Abstract
Controlling etch properties of silicon-based antireflective spin-on hardmask materials
Author(s): Sang Kyun Kim; Hyeon Mo Cho; Changsoo Woo; Sang Ran Koh; Mi-Young Kim; Hui Chan Yoon; Woojin Lee; Seung-Wook Shin; Jong Seob Kim; Tuwon Chang
Show Abstract
Modified trilayer resist approach for ArF immersion lithography
Author(s): Tae-Hwan Oh; Yunsuk Nam; Suhyun Kim; Minkeun Kwak; Hyungsam Choi; Chansam Chang; Yongchul Kim; Hong-Jae Shin; Nae-In Lee
Show Abstract
Radiation sensitive developable bottom anti-reflective coatings (DBARC): recent results
Author(s): Francis M. Houlihan; Alberto Dioses; Takanori Kudo; Meng Li; Lin Zhang; Sumathy Vasanthan; Srinivasan Chakrapani; Deepa Parthasarathy; Charito Antonio; Edward Ng; Ping-Hung Lu; Mark Neisser; Munirathna Padmanaban
Show Abstract
Immersion BARC for hyper NA applications
Author(s): Wan-Ju Tseng; Wen Liang Huang; Bill Lin; Bo Jou Lu; Tsung Ju Yeh; E. T. Liu; Chun Chi Yu; Sue Ryeon Kim; Jeong Yun Yu; Gerald Wayton; Sook Lee; Sabrina Wong; Chaoyang Lin; Maurizio Ciambra; Suzanne Coley; David Praseuth; Kathleen O'Connell; George Barclay
Show Abstract
Reflection control for immersion lithography: a single organic antireflectant over high-reflective substrates for double patterning
Author(s): Sabrina Wong; Jeong Yun Yu; Sue Ryeon Kim; Mike Mori; Amy Kwok; Kathleen M. O'Connell; George Barclay; Ki Lyoung Lee; Sung Koo Lee; Cheol Kyu Bok
Show Abstract
Utilization of spin-on and reactive ion etch critical dimension shrink with double patterning for 32 nm and beyond contact level interconnects
Author(s): Karen Petrillo; Dave Horak; Susan Fan; Erin McLellan; Matt Colburn; Andrew Metz; Shannon Dunn; Dave Hetzer; Jason Cantone; Kenichi Ueda; Tom Winter; Vaidyanathan Balasubramaniam; Cherry Tang; Mark Slezak
Show Abstract
Optical threshold layer and intermediate state two-photon PAG approaches to double exposure lithography
Author(s): Adam J. Berro; Xinyu Gu; Naphtali O'Connor; Steffen Jockusch; Tomoki Nagai; Toshiyuki Ogata; Paul Zimmerman; Bryan J. Rice; Elizabeth Adolph; Travis Byargeon; Jose Gonzalez; Nicholas J. Turro; C. Grant Willson
Show Abstract
Fundamental study of optical threshold layer approach towards double exposure lithography
Author(s): Xinyu Gu; Adam J. Berro; Younjin Cho; Kane Jen; Saul Lee; Tomoki Ngai; Toshiyuki Ogata; William J. Durand; Arunkumar Sundaresan; Jeffrey R. Lancaster; Steffen Jockusch; Paul Zimmerman; Nicholas J. Turro; C. Grant Willson
Show Abstract
CD uniformity improvement for double-patterning lithography (litho-litho-etch) using freezing process
Author(s): Hisanori Sugimachi; Hitoshi Kosugi; Tsuyoshi Shibata; Junichi Kitano; Koichi Fujiwara; Kouji Itou; Michihiro Mita; Akimasa Soyano; Shiro Kusumoto; Motoyuki Shima; Yoshikazu Yamaguchi
Show Abstract
Contact formation with extremely low proximity effect by double patterning technology
Author(s): C. W. Yeh; S. S. Yu; H. J. Lee; C. H. Huang; Elvis Yang; T. H. Yang; K. C. Chen; Chih-Yuan Lu
Show Abstract
Double imaging with resist freezing in a vapor reaction chamber
Author(s): Ralph R. Dammel; Yusuke Takano; Richard Collett; David J. Abdallah
Show Abstract
Study of the simulation parameter for EUVL
Author(s): Atsushi Sekiguchi
Show Abstract
Process latitude simulation of positive-tone litho-litho-etch double patterning
Author(s): Wallace P. Printz; Steven A. Scheer
Show Abstract
Performance of an ArF siloxane BARC exposed to a 172-nm UV cure for double patterning applications
Author(s): Ze-Yu Wu; Joseph Kennedy; Song-Yuan Xie; Ron Katsanes; Kyle Flanigan; Junyan Dai; Nikolaos Bekiaris; Hiram Cervera; Glen Mori; Thomas Wallow
Show Abstract
Underlayer designs to enhance the performance of EUV resists
Author(s): Hao Xu; James M. Blackwell; Todd R. Younkin; Ke Min
Show Abstract
Resolution and LWR improvements by acid diffusion control in EUV lithography
Author(s): Hideaki Tsubaki; Tooru Tsuchihashi; Tomotaka Tsuchimura
Show Abstract
EUV lithography for 30nm half pitch and beyond: exploring resolution, sensitivity, and LWR tradeoffs
Author(s): E. Steve Putna; Todd R. Younkin; Manish Chandhok; Kent Frasure
Show Abstract
Development of EUV resists at Selete
Author(s): Hiroaki Oizumi; Daisuke Kawamura; Koji Kaneyama; Shinji Kobayashi; Toshiro Itani
Show Abstract
Non-chemically amplified negative resist for EUV lithography
Author(s): Masamitsu Shirai; Koichi Maki; Haruyuki Okamura; Koji Kanayama; Toshiro Itani
Show Abstract
Pattern transfer process development for EUVL
Author(s): Daisuke Kawamura; Yuusuke Tanaka; Toshiro Itani; Eiichi Soda; Noriaki Oda
Show Abstract
EUV resist outgassing quantification and application
Author(s): Shinji Kobayashi; Julius Joseph Santillan; Hiroaki Oizumi; Toshiro Itani
Show Abstract
EUV resist processing in vacuum
Author(s): Koji Kaneyama; Shinji Kobayashi; Toshiro Itani
Show Abstract
Non-ionic PAG behavior under high energy exposure sources
Author(s): Richard A. Lawson; David E. Noga; Laren M. Tolbert; Clifford L. Henderson
Show Abstract
Sensitivity of EUV resists to out-of-band radiation
Author(s): Jeanette M. Roberts; Robert L. Bristol; Todd R. Younkin; Theodore H. Fedynyshyn; David K. Astolfi; Alberto Cabral
Show Abstract
Dissolution kinetics and deprotection reaction in chemically amplified resists upon exposure to extreme ultraviolet radiation
Author(s): Hiroki Yamamoto; Takahiro Kozawa; Seiichi Tagawa; Takeyoshi Mimura; Takeshi Iwai; Junichi Onodera
Show Abstract
Evaluation of alcoholic hydroxyl derivatives for chemically amplified extreme ultraviolet resist
Author(s): Kikuo Furukawa; Takahiro Kozawa; Seiichi Tagawa
Show Abstract
Evaluation of novel resist materials for EUV lithography
Author(s): Ichihiro Aratani; Shuji Matsunaga; Tsuyoshi Kajiyashiki; Takeo Watanabe; Hiroo Kinoshita
Show Abstract
Evaluation of track performance for EUV lithography
Author(s): Keiichi Tanaka; Junji Nakamura; Yoshiaki Yamada; Shinji Kobayashi; Toshiro Itani
Show Abstract
Development of polymers for non-CAR resists for EUV lithography
Author(s): Andrew K. Whittaker; Idriss Blakey; James Blinco; Kevin S. Jack; Kirsten Lawrie; Heping Liu; Anguang Yu; Michael Leeson; Wang Yeuh; Todd Younkin
Show Abstract
CD and defect improvement challenges for immersion processes
Author(s): Keisuke Ehara; Tatsuhiko Ema; Toshinari Yamasaki; Seiji Nakagawa; Seiji Ishitani; Akihiko Morita; Jeonghun Kim; Masashi Kanaoka; Shuichi Yasuda; Masaya Asai
Show Abstract
Defect reduction in non-topcoat resist by selective segregation removal step
Author(s): Takuya Hagiwara; Mamoru Terai; Takeo Ishibashi; Tomofumi Miyauchi; Shinya Hori; Teruhiko Kumada; Tomoya Kumagai; Atsushi Sawano; Kosuke Doi; Takeshi Matsunobe; Naoki Man; Hirofumi Seki; Yusaku Tanahashi; Tetsuro Hanawa
Show Abstract
Characterization of film cut position at wafer bevel for effective immersion lithography process
Author(s): Kazuyuki Matsumaro; Miyoshi Seki; Takeshi Kato
Show Abstract
High-index nanocomposite photoresist for 193-nm lithography
Author(s): Woo Jin Bae; Makros Trikeriotis; Robert Rodriguez; Michael F. Zettel; Emil Piscani; Christopher K. Ober; Emmanuel P. Giannelis; Paul Zimmerman
Show Abstract
Non-topcoat process development for ArF immersion lithography
Author(s): Takehiko Naruoka; Nobuji Matsumura; Akimasa Soyano; Shiro Kusumoto; Yoshikazu Yamaguchi; Hiroshi Arima; Yuichi Yoshida; Kousuke Yoshihara; Tsuyoshi Shibata
Show Abstract
Backside EBR process performance with various wafer properties
Author(s): Tomohiro Goto; Kazuhito Shigemori; Rik Vangheluwe; Daub Erich; Masakazu Sanada
Show Abstract
High refractive index nanoparticle fluids for 193-nm immersion lithography
Author(s): Markos Trikeriotis; Robert Rodriguez; Michael F. Zettel; Aristeidis Bakandritsos; Woo Jin Bae; Paul A. Zimmerman; Christopher K. Ober; Emmanuel P. Giannelis
Show Abstract
Defectivity process optimization on immersion topcoat less resist stacks
Author(s): Kazuhito Shigemori; Suping Wang; Len Tedeschi; Gazi Tanriseven; Raymond Maas; Coen Verspaget; Ruud Marechal; Ad Lammers; Joerg Mallmann; Masahiko Harumoto; Akihiro Hisai; Masaya Asai
Show Abstract
Defectivity issues in topcoat-free photoresists
Author(s): Karen Petrillo; Rick Johnson; Will Conley; Jason Cantone; Dave Hetzer; Shannon Dunn; Tom Winter; Youri van Dommelen; Aiqin Jiang
Show Abstract
Reduction of line width and edge roughness by resist reflow process for extreme ultra-violet lithography
Author(s): In Wook Cho; Joon-Min Park; Hyunsu Kim; Joo-Yoo Hong; Seong-Sue Kim; Han-Ku Cho; Hye-Keun Oh
Show Abstract
Line edge and width roughness dependency on each ingredient of extreme ultraviolet molecular resist
Author(s): Hyunsu Kim; In Wook Cho; Seong-Sue Kim; Han-Ku Cho; Hye-Keun Oh
Show Abstract
A study of the photo acid generator material design for chemically amplified photoresists
Author(s): Y. Utsumi; T. Seshimo; Y. Komuro; A. Kawaue; K. Ishiduka; K. Matsuzawa; Hideo Hada; J. Onodera
Show Abstract
Stochastic modeling in lithography: autocorrelation behavior of catalytic reaction-diffusion systems
Author(s): Chris A. Mack
Show Abstract
Important challenges for line-width-roughness reduction
Author(s): Hidetami Yaegashi; M. Kushibiki; E. Nishimura; S. Shimura; F. Iwao; T. Kawasaki; K. Hasebe; H. Murakami; A. Hara; K. Yabe
Show Abstract
Stochastic modeling in lithography: the use of dynamical scaling in photoresist development
Author(s): Chris A. Mack
Show Abstract
Line edge roughness transfer during plasma etching: modeling approaches and comparison with experimental results
Author(s): Vassilios Constantoudis; George Kokkoris; Panayiota Xydi; Evangelos Gogolides; Erwine Pargon; Mickael Martin
Show Abstract
Image reversal trilayer process using standard positive photoresist
Author(s): David J. Abdallah; John Sagan; Kazunori Kurosawa; Jin Li; Yusuke Takano; Yasuo Shimizu; Ninad Shinde; Tatsuro Nagahara; Tomonori Ishikawa; Ralph R. Dammel
Show Abstract
Quantitative measurement of the molecular-mass distribution in calix[4]resorcinarene molecular glass resists by mass spectrometry
Author(s): W. E. Wallace; K. M. Flynn; C. M. Guttman; D. L. VanderHart; V. M. Prabhu; A. De Silva; N. M. Felix; C. K. Ober
Show Abstract
Adamantane-based molecular glass resist for 193-nm lithography
Author(s): Shinji Tanaka; Miki Murakami; Kazuya Fukushima; Naoya Kawano; Yohitaka Uenoyama; Katsuki Ito; Hidetoshi Ohno; Nobuaki Matsumoto
Show Abstract
Molecular glass resists for next-generation lithography
Author(s): Marie Krysak; Anuja De Silva; Jing Sha; Jin-Kyun Lee; Christopher K. Ober
Show Abstract
Reworkable spin-on trilayer materials: optimization of rework process and solutions for manufacturability
Author(s): Ruzhi Zhang; Allen G. Timko; John Zook; Yayi Wei; Lyudmila Pylneva; Yi Yi; Chenghong Li; Hengpeng Wu; Dalil Rahman; Douglas S. McKenzie; Clement Anyadiegwu; Ping-Hung Lu; Mark Neisser; Ralph R. Dammel; Ron Bradbury; Timothy Lee
Show Abstract
Development of new phenylcalix[4]resorcinarene: its application to positive-tone molecular resist for EB and EUV lithography
Author(s): Masatoshi Echigo; Dai Oguro
Show Abstract
Development of novel positive-tone resists for EUVL
Author(s): Takanori Owada; Akinori Yomogita; Takashi Kashiwamura; Toshiaki Kusaba; Shinji Miyamoto; Tetsuro Takeya
Show Abstract
Molecular glass resists developable in supercritical carbon dioxide for 193 nm lithography
Author(s): Jing Sha; Jin-Kyun Lee; Christopher K. Ober
Show Abstract
Molecular resists based on calix[4]resorcinarene derivatives for EB lithography
Author(s): Kenichi Okuyama
Show Abstract
Practical implementation of immersion resist materials
Author(s): Hamid Khorram; Katsushi Nakanob; Tomoharu Fujiwara; Yasuhiro Iriuchijima; Y. Ishii; Natsuko Sagawa; Tadamasa Kawakubo; Shirou Nagaoka
Show Abstract
Analysis of molecular resist distribution in a resist film by using x-ray reflectivity
Author(s): Jeongsik Kim; Jae-Woo Lee; Deogbae Kim; Jaehyun Kim; Sung-Il Ahn; Wang-Cheol Zin
Show Abstract
Theoretical analysis of energy degradation of electrons in the resists
Author(s): Minoru Toriumi
Show Abstract
Theoretical analysis of development behavior of resist measured by QCM
Author(s): Minoru Toriumi
Show Abstract
Temperature and critical dimension variation in a single wafer on hot plate due to non-uniform heat source
Author(s): Bobae Kim; Joon-Min Park; Hyunsu Kim; Ilsin An; Seung-Wook Park; Hye-Keun Oh
Show Abstract
Decomposition analysis of molecular resists to further CD control
Author(s): Daiju Shiono; Hideo Hada; Taku Hirayama; Junichi Onodera; Takeo Watanabe; Hiroo Kinoshita
Show Abstract
Diffusion of acid and amine at resist/BARC interface
Author(s): Masamitsu Shirai; Noriaki Majima; Haruyuki Okamura; Yoshiomi Hiroi; Shigeo Kimura; Yasuyuki Nakajima
Show Abstract
EUV resist requirements: absorbance and acid yield
Author(s): Roel Gronheid; Carlos Fonseca; Michael J. Leeson; Jacob R. Adams; Jeffrey R. Strahan; C. Grant Willson; Bruce W. Smith
Show Abstract
Study of residue type defect formation mechanism and the effect of advanced defect reduction (ADR) rinse process
Author(s): Hiroshi Arima; Yuichi Yoshida; Kosuke Yoshihara; Tsuyoshi Shibata; Yuki Kushida; Hiroki Nakagawa; Yukio Nishimura; Yoshikazu Yamaguchi
Show Abstract
Understanding pattern collapse in high-resolution lithography: impact of feature width on critical stress
Author(s): David E Noga; Richard A. Lawson; Cheng-Tsung Lee; Laren M. Tolbert; Clifford L Henderson
Show Abstract
Characteristic three-dimensional structure of resist's distribution after drying a resist solution coated on a flat substrate: analysis using the extended dynamical model of the drying process
Author(s): Hiroyuki Kagami
Show Abstract
Polymer dissolution model: an energy adaptation of the critical ionization theory
Author(s): Siddharth Chauhan; Mark Somervell; Steven Scheer; Chris A. Mack; Roger T. Bonnecaze; C. Grant Willson
Show Abstract
Meso-scale simulation of the polymer dynamics in the formation process of line-edge roughness
Author(s): Hiroshi Morita; Masao Doi
Show Abstract
Improvements in process performance for immersion technology high volume manufacturing
Author(s): K. Nafus; T. Shimoaoki; M. Enomoto; H. Shite; T. Otsuka; H. Kosugi; T. Shibata; J. Mallmann; R. Maas; C. Verspaget; E. van der Heijden; E. van Setten; J. Finders; S. Wang; N. Boudou; C. Zoldesi
Show Abstract
Advanced immersion contact hole patterning for sub 40nm memory applications: a fundamental resist study
Author(s): Yun-Kyeong Jang; Jin-Young Yoon; Shi-Yong Lee; Kwang-Sub Yoon; Seok-Hwan Oh; Seong-Woon Choi; Woo-Sung Han; Seokho Kang; Thomas Penniman; Duk-Soo Kim; Dong Won Chung; Sung-Seo Cho; Cheng Bai Xu; George G. Barclay
Show Abstract
Resist process control for 32-nm logic node and beyond with NA > 1.30 immersion exposure tool
Author(s): Seiji Nagahara; Kazuhiro Takahata; Seiji Nakagawa; Takashi Murakami; Kazuhiro Takeda; Shinpei Nakamura; Makoto Ueki; Masaki Satake; Tatsuhiko Ema; Hiroharu Fujise; Hiroki Yonemitsu; Yuriko Seino; Shinichiro Nakagawa; Masafumi Asano; Yosuke Kitamura; Takayuki Uchiyama; Shoji Mimotogi; Makoto Tominaga
Show Abstract
Feasibility study of non-topcoat resist for 22nm node devices
Author(s): Koutaro Sho; Hirokazu Kato; Katsutoshi Kobayashi; Kazunori Iida; Tomoya Ori; Daizo Muto; Tsukasa Azuma; Shinichi Ito; Tomoharu Fujiwara; Yuuki Ishii; Yukio Nishimura; Takanori Kawakami; Motoyuki Shima
Show Abstract
Single component molecular resists containing bound photoacid generator functionality
Author(s): Richard A. Lawson; Laren M. Tolbert; Clifford L. Henderson
Show Abstract
Low activation energy fullerene molecular resist
Author(s): J. Manayam; M. Manickam; J. A. Preece; R. E. Palmer; A. P. G. Robinson
Show Abstract
Negative-tone molecular resists based on cationic polymerization
Author(s): Richard A. Lawson; Laren M. Tolbert; Todd R. Younkin; Clifford L. Henderson
Show Abstract
Fluorinated polymethacrylates as highly sensitive non-chemically amplified e-beam resists
Author(s): Jeff R. Strahan; Jacob R. Adams; Wei-Lun Jen; Anja Vanleenhove; Colin C. Neikirk; Timothy Rochelle; Roel Gronheid; C. Grant Willson
Show Abstract
Hybrid resist systems based on α-substituted acrylate copolymers
Author(s): Hiroshi Ito; Linda K. Sundberg; Luisa Bozano; Elizabeth M. Lofano; Kazuhiro Yamanaka; Yoshiharu Terui; Masaki Fujiwara
Show Abstract
Sub-20 nm trench patterning with a hybrid chemical shrink and SAFIER process
Author(s): Yijian Chen; Xumou Xu; Hao Chen; Liyan Miao; Pokhui Blanco; Man-Ping Cai; Chris S. Ngai
Show Abstract
Progress towards production worthy developable BARCs (DBARCs)
Author(s): James Cameron; John Amara; Gregory Prokopowicz; Jin Wuk Sung; David Valeri; Adam Ware; Kevin O'Shea; Yoshihiro Yamamoto; Tomoki Kurihara; Libor Vyklicky; Wu-Song Huang; Irene Popova; Pushkara Rao Varanasi
Show Abstract
High-Si content BARC for dual-BARC systems such as trilayer patterning
Author(s): Joseph Kennedy; Song-Yuan Xie; Ze-Yu Wu; Ron Katsanes; Kyle Flanigan; Kevin Lee; Mark Slezak; Zhi Liu; Shang-Ho Lin
Show Abstract
Incorporating organosilanes into EUV photoresists: diphenyltrimethylsilylmethylsulfonium triflate as a new PAG
Author(s): Shalini Sharma; Yoichi Ogata; Clarion Tung; James M. Blackwell; Todd R. Younkin; Yoshi Hishiro; Joshua S. Figueroa; Arnold L. Rheingold
Show Abstract
Main chain decomposible star shaped polymer for EUV resist
Author(s): Jun Iwashita; Takeyoshi Mimura; Taku Hirayama; Takeshi Iwai
Show Abstract
Resist material design to improve sensitivity in EUV lithography
Author(s): Hideaki Tsubaki; Tooru Tsuchihashi; Katsuhiro Yamashita; Tomotaka Tsuchimura
Show Abstract
Lithographic evaluation and chemical modeling of acid amplifiers used in EUV photoresists
Author(s): Robert Brainard; Craig Higgins; Seth Kruger; Srividya Revuru; Brian Cardineau; Sarah Gibbons; Dan Freedman; Harun Solak; Wang Yueh; Todd Younkin
Show Abstract
Aryl sulfonates as neutral photoacid generators (PAGs) for EUV lithography
Author(s): Robert Sulc; James M. Blackwell; Todd R. Younkin; E. Steve Putna; Katherine Esswein; Antonio G. DiPasquale; Ryan Callahan; Hideaki Tsubaki; Tooru Tsuchihashi
Show Abstract
Effect of resist polymer molecular weight on EUV lithography
Author(s): Hideaki Tsubaki; Katsuhiro Yamashita; Hidenori Takahashi; Daisuke Kawamura; Toshiro Itani
Show Abstract
Correlation of EUV resist performance metrics in micro-exposure and full-field EUV projection tools
Author(s): Thomas I. Wallow; Bill Pierson; Hiroyuki Mizuno; Anita Fumar-Pici; Karen Petrillo; Chris N. Anderson; Patrick P. Naulleau; Steven G. Hansen; Yunfei Deng; Koen van Ingen Schenau; Chiew-Seng Koay; Linda Ohara; Sang-In Han; Robert Watso; Lior Huli; Martin Burkhardt; Obert Wood; Joerg Mallmann; Bart Kessels; Robert Routh; Kevin Cummings
Show Abstract
Characterization of the photoacid diffusion length
Author(s): Shuhui Kang; Vivek M. Prabhu; Wen-li Wu; Eric K. Lin; Kwang-Woo Choi; Manish Chandhok; Todd R. Younkin; Wang Yueh
Show Abstract
Elucidating the physiochemical and lithographic behavior of ultra-thin photoresist films
Author(s): Annapoorani Sundaramoorthi; Todd R. Younkin; Clifford L. Henderson
Show Abstract
Non-CA resists for 193 nm immersion lithography: effects of chemical structure on sensitivity
Author(s): Idriss Blakey; Lan Chen; Yong-Keng Goh; Kirsten Lawrie; Ya-Mi Chuang; Emil Piscani; Paul A. Zimmerman; Andrew K. Whittaker
Show Abstract
Quantitative measurement of resist outgassing during exposure
Author(s): Nicolae Maxim; Frances A. Houle; Jeroen Huijbregtse; Vaughn R. Deline; Hoa Truong; Willem van Schaik
Show Abstract
Simulation of optical lithography in the presence of topography and spin-coated films
Author(s): Stewart A. Robertson; Michael T. Reilly; Trey Graves; John J. Biafore; Mark D. Smith; Damien Perret; Vladimir Ivin; Sergey Potashov; Mikhail Silakov; Nikolay Elistratov
Show Abstract
Mesoscale kinetic Monte Carlo simulations of molecular resists: the effect of PAG homogeneity on resolution, LER, and sensitivity
Author(s): Richard A. Lawson; Clifford L. Henderson
Show Abstract
Calibration of physical resist models: methods, usability, and predictive power
Author(s): Ulrich K. Klostermann; Thomas Mülders; Denis Ponomarenco; Thomas Schmöller; Jeroen Van de Kerkhove; Peter De Bisschop
Show Abstract
Statistical simulation of resist at EUV and ArF
Author(s): John J. Biafore; Mark D. Smith; Chris A. Mack; James W. Thackeray; Roel Gronheid; Stewart A. Robertson; Trey Graves; David Blankenship
Show Abstract
Position shift analysis in resist reflow process for sub-50-nm contact hole
Author(s): Jee-Hye You; Joonwoo Park; Joon-Min Park; Heejun Jeong; Hye-Keun Oh
Show Abstract
Resist roughness bi-modality as revealed by two-dimensional FFT 2D analysis
Author(s): Yehiel Gotkis; Leonid Baranov; Theodore H. Fedynyshyn; Susan Cann
Show Abstract
Reducing LER using a grazing incidence ion beam
Author(s): C. R. M. Struck; R. Raju; M. J Neumann; D. N. Ruzic
Show Abstract
Resist fundamentals for resolution, LER, and sensitivity (RLS) performance tradeoffs and their relation to micro-bridging defects
Author(s): Benjamin Rathsack; Kathleen Nafus; Shinichi Hatakeyama; Yuhei Kuwahara; Junichi Kitano; Roel Gronheid; Alessandro Vaglio Pret
Show Abstract
PAG segregation during exposure affecting innate material roughness
Author(s): Theodore H. Fedynyshyn; David K. Astolfi; Alberto Cabral; Susan Cann; Indira Pottebaum; Jeanette M. Roberts
Show Abstract
Chalcogenide glass thin film resists for grayscale lithography
Author(s): A. Kovalskiy; J. Cech; C. L. Tan; W. R. Heffner; E. Miller; C. M. Waits; M. Dubey; W. Churaman; M. Vlcek; H. Jain
Show Abstract
Defect reduction by using point-of-use filtration in a new coater/developer
Author(s): Toru Umeda; Shuichi Tsuzuki; Toru Numaguchi
Show Abstract
CDU improvement with wafer warpage control oven for high-volume manufacturing
Author(s): T. Tomita; H. Weichert; S. Hornig; S. Trepte; H. Shite; R. Uemura; J. Kitano
Show Abstract
Gap-fill type HSQ/ZEP520A bilayer resist process-(III): optimal process window for HSQ air-tip formation
Author(s): Wei-Su Chen; Ming-Jinn Tsai
Show Abstract
Feasibility studies of coating method for planarization process
Author(s): Kentaro Matsunaga; Tomoya Oori; Hirokazu Kato; Eishi Shiobara; Makoto Muramatsu; Mitsuaki Iwashita; Takahiro Kitano; Yusuke Horiguchi; Tomoya Ohashi; Satoshi Takei; Shinichi Ito
Show Abstract
Contact analysis studies of an ESCAP resist with scCO2 compatible additives
Author(s): Abhinav Rastogi; Gregory N. Toepperwein; Manabu Tanaka; Robert A. Riggleman; Juan J. de Pablo; Christopher K. Ober
Show Abstract

© SPIE. Terms of Use
Back to Top