Share Email Print
cover

Proceedings of SPIE Volume 7273

Advances in Resist Materials and Processing Technology XXVI
Format Member Price Non-Member Price
Softcover $105.00 * $105.00 *

*Available as a photocopy reprint only. Allow two weeks reprinting time plus standard delivery time. No discounts or returns apply.


Volume Details

Volume Number: 7273
Date Published: 30 March 2009
Softcover: 135 papers (1334) pages
ISBN: 9780819475268

Table of Contents
show all abstracts | hide all abstracts
Front Matter: Volume 7273
Author(s): Proceedings of SPIE
Newly developed positive tone resists for Posi/Posi double patterning process
Author(s): Tsuyoshi Nakamura; Masaru Takeshita; Satoshi Maemori; Ryusuke Uchida; Ryoichi Takasu; Katsumi Ohmori
Show Abstract
Materials for single-etch double patterning process: surface curing agent and thermal cure resist
Author(s): Young C. Bae; Yi Liu; Thomas Cardolaccia; John C. McDermott; Peter Trefonas; Ken Spizuoco; Michael Reilly; Amandine Pikon; Lori Joesten; Gary G. Zhang; George G. Barclay; Julia Simon; Stéphanie Gaurigan
Show Abstract
Double-exposure materials for pitch division with 193nm lithography: requirements, results
Author(s): Robert Bristol; David Shykind; Sungwon Kim; Yan Borodovsky; Evan Schwartz; Courtney Turner; Georgeta Masson; Ke Min; Katherine Esswein; James M. Blackwell; Nikolay Suetin
Show Abstract
Topcoat-free ArF negative tone resist
Author(s): Tomoyuki Ando; Sho Abe; Ryoichi Takasu; Jun Iwashita; Shogo Matsumaru; Ryoji Watanabe; Komei Hirahara; Yujiro Suzuki; Miki Tsukano; Takeshi Iwai
Show Abstract
Correlation of experimental and simulated cure-induced photoresist distortions in double patterning
Author(s): Thomas I. Wallow; Mahidhar Rayasam; Masanori Yamaguchi; Yohei Yamada; Karen Petrillo; Kenji Yoshimoto; Jongwook Kye; Ryoung-Han Kim; Harry J. Levinson
Show Abstract
Fine trench patterns with double patterning and trench shrink technology
Author(s): Satoru Shimura; Masato Kushibiki; Tetsu Kawasaki; Ryo Tanaka; Akira Tokui; Yuuki Ishii
Show Abstract
Double patterning process with freezing technique
Author(s): Goji Wakamatsu; Yusuke Anno; Masafumi Hori; Tomohiro Kakizawa; Michihiro Mita; Kenji Hoshiko; Takeo Shioya; Koichi Fujiwara; Shiro Kusumoto; Yoshikazu Yamaguchi; Tsutomu Shimokawa
Show Abstract
Development of materials and processes for negative tone development toward 32-nm node 193-nm immersion double-patterning process
Author(s): Shinji Tarutani; Tsubaki Hideaki; Sou Kamimura
Show Abstract
Photoresist stabilization for double patterning using 172 nm photoresist curing
Author(s): Thomas I. Wallow; Junyan Dai; Charles R. Szmanda; Hiram Cervera; Chi Truong; Nikolaos Bekiaris; Jong-Wook Kye; Ryoung-Han Kim; Harry J. Levinson; Glen Mori
Show Abstract
Improvements in process performance for immersion technology high volume manufacturing
Author(s): K. Nafus; T. Shimoaoki; M. Enomoto; H. Shite; T. Otsuka; H. Kosugi; T. Shibata; J. Mallmann; R. Maas; C. Verspaget; E. van der Heijden; E. van Setten; J. Finders; S. Wang; N. Boudou; C. Zoldesi
Show Abstract
Advanced immersion contact hole patterning for sub 40nm memory applications: a fundamental resist study
Author(s): Yun-Kyeong Jang; Jin-Young Yoon; Shi-Yong Lee; Kwang-Sub Yoon; Seok-Hwan Oh; Seong-Woon Choi; Woo-Sung Han; Seokho Kang; Thomas Penniman; Duk-Soo Kim; Dong Won Chung; Sung-Seo Cho; Cheng Bai Xu; George G. Barclay
Show Abstract
Resist process control for 32-nm logic node and beyond with NA > 1.30 immersion exposure tool
Author(s): Seiji Nagahara; Kazuhiro Takahata; Seiji Nakagawa; Takashi Murakami; Kazuhiro Takeda; Shinpei Nakamura; Makoto Ueki; Masaki Satake; Tatsuhiko Ema; Hiroharu Fujise; Hiroki Yonemitsu; Yuriko Seino; Shinichiro Nakagawa; Masafumi Asano; Yosuke Kitamura; Takayuki Uchiyama; Shoji Mimotogi; Makoto Tominaga
Show Abstract
Feasibility study of non-topcoat resist for 22nm node devices
Author(s): Koutaro Sho; Hirokazu Kato; Katsutoshi Kobayashi; Kazunori Iida; Tomoya Ori; Daizo Muto; Tsukasa Azuma; Shinichi Ito; Tomoharu Fujiwara; Yuuki Ishii; Yukio Nishimura; Takanori Kawakami; Motoyuki Shima
Show Abstract
Single component molecular resists containing bound photoacid generator functionality
Author(s): Richard A. Lawson; Laren M. Tolbert; Clifford L. Henderson
Show Abstract
Low activation energy fullerene molecular resist
Author(s): J. Manayam; M. Manickam; J. A. Preece; R. E. Palmer; A. P. G. Robinson
Show Abstract
Negative-tone molecular resists based on cationic polymerization
Author(s): Richard A. Lawson; Laren M. Tolbert; Todd R. Younkin; Clifford L. Henderson
Show Abstract
Fluorinated polymethacrylates as highly sensitive non-chemically amplified e-beam resists
Author(s): Jeff R. Strahan; Jacob R. Adams; Wei-Lun Jen; Anja Vanleenhove; Colin C. Neikirk; Timothy Rochelle; Roel Gronheid; C. Grant Willson
Show Abstract
Hybrid resist systems based on α-substituted acrylate copolymers
Author(s): Hiroshi Ito; Linda K. Sundberg; Luisa Bozano; Elizabeth M. Lofano; Kazuhiro Yamanaka; Yoshiharu Terui; Masaki Fujiwara
Show Abstract
Sub-20 nm trench patterning with a hybrid chemical shrink and SAFIER process
Author(s): Yijian Chen; Xumou Xu; Hao Chen; Liyan Miao; Pokhui Blanco; Man-Ping Cai; Chris S. Ngai
Show Abstract
Message to the undecided: using DUV dBARC for 32-nm node implants
Author(s): Hyung-Rae Lee; Irene Y. Popova; JoAnn M. Rolick; Juan-Manuel Gomez; Todd C. Bailey
Show Abstract
Progress towards production worthy developable BARCs (DBARCs)
Author(s): James Cameron; John Amara; Gregory Prokopowicz; Jin Wuk Sung; David Valeri; Adam Ware; Kevin O'Shea; Yoshihiro Yamamoto; Tomoki Kurihara; Libor Vyklicky; Wu-Song Huang; Irene Popova; Pushkara Rao Varanasi
Show Abstract
High-Si content BARC for dual-BARC systems such as trilayer patterning
Author(s): Joseph Kennedy; Song-Yuan Xie; Ze-Yu Wu; Ron Katsanes; Kyle Flanigan; Kevin Lee; Mark Slezak; Zhi Liu; Shang-Ho Lin
Show Abstract
Incorporating organosilanes into EUV photoresists: diphenyltrimethylsilylmethylsulfonium triflate as a new PAG
Author(s): Shalini Sharma; Yoichi Ogata; Clarion Tung; James M. Blackwell; Todd R. Younkin; Yoshi Hishiro; Joshua S. Figueroa; Arnold L. Rheingold
Show Abstract
Main chain decomposible star shaped polymer for EUV resist
Author(s): Jun Iwashita; Takeyoshi Mimura; Taku Hirayama; Takeshi Iwai
Show Abstract
Resist material design to improve sensitivity in EUV lithography
Author(s): Hideaki Tsubaki; Tooru Tsuchihashi; Katsuhiro Yamashita; Tomotaka Tsuchimura
Show Abstract
Lithographic evaluation and chemical modeling of acid amplifiers used in EUV photoresists
Author(s): Robert Brainard; Craig Higgins; Seth Kruger; Srividya Revuru; Brian Cardineau; Sarah Gibbons; Dan Freedman; Harun Solak; Wang Yueh; Todd Younkin
Show Abstract
Aryl sulfonates as neutral photoacid generators (PAGs) for EUV lithography
Author(s): Robert Sulc; James M. Blackwell; Todd R. Younkin; E. Steve Putna; Katherine Esswein; Antonio G. DiPasquale; Ryan Callahan; Hideaki Tsubaki; Tooru Tsuchihashi
Show Abstract
Effect of resist polymer molecular weight on EUV lithography
Author(s): Hideaki Tsubaki; Katsuhiro Yamashita; Hidenori Takahashi; Daisuke Kawamura; Toshiro Itani
Show Abstract
Correlation of EUV resist performance metrics in micro-exposure and full-field EUV projection tools
Author(s): Thomas I. Wallow; Bill Pierson; Hiroyuki Mizuno; Anita Fumar-Pici; Karen Petrillo; Chris N. Anderson; Patrick P. Naulleau; Steven G. Hansen; Yunfei Deng; Koen van Ingen Schenau; Chiew-Seng Koay; Linda Ohara; Sang-In Han; Robert Watso; Lior Huli; Martin Burkhardt; Obert Wood; Joerg Mallmann; Bart Kessels; Robert Routh; Kevin Cummings
Show Abstract
Characterization of the photoacid diffusion length
Author(s): Shuhui Kang; Vivek M. Prabhu; Wen-li Wu; Eric K. Lin; Kwang-Woo Choi; Manish Chandhok; Todd R. Younkin; Wang Yueh
Show Abstract
Elucidating the physiochemical and lithographic behavior of ultra-thin photoresist films
Author(s): Annapoorani Sundaramoorthi; Todd R. Younkin; Clifford L. Henderson
Show Abstract
Non-CA resists for 193 nm immersion lithography: effects of chemical structure on sensitivity
Author(s): Idriss Blakey; Lan Chen; Yong-Keng Goh; Kirsten Lawrie; Ya-Mi Chuang; Emil Piscani; Paul A. Zimmerman; Andrew K. Whittaker
Show Abstract
Quantitative measurement of resist outgassing during exposure
Author(s): Nicolae Maxim; Frances A. Houle; Jeroen Huijbregtse; Vaughn R. Deline; Hoa Truong; Willem van Schaik
Show Abstract
Simulation of optical lithography in the presence of topography and spin-coated films
Author(s): Stewart A. Robertson; Michael T. Reilly; Trey Graves; John J. Biafore; Mark D. Smith; Damien Perret; Vladimir Ivin; Sergey Potashov; Mikhail Silakov; Nikolay Elistratov
Show Abstract
Mesoscale kinetic Monte Carlo simulations of molecular resists: the effect of PAG homogeneity on resolution, LER, and sensitivity
Author(s): Richard A. Lawson; Clifford L. Henderson
Show Abstract
Calibration of physical resist models: methods, usability, and predictive power
Author(s): Ulrich K. Klostermann; Thomas Mülders; Denis Ponomarenco; Thomas Schmöller; Jeroen Van de Kerkhove; Peter De Bisschop
Show Abstract
Statistical simulation of resist at EUV and ArF
Author(s): John J. Biafore; Mark D. Smith; Chris A. Mack; James W. Thackeray; Roel Gronheid; Stewart A. Robertson; Trey Graves; David Blankenship
Show Abstract
Position shift analysis in resist reflow process for sub-50-nm contact hole
Author(s): Jee-Hye You; Joonwoo Park; Joon-Min Park; Heejun Jeong; Hye-Keun Oh
Show Abstract
Resist roughness bi-modality as revealed by two-dimensional FFT 2D analysis
Author(s): Yehiel Gotkis; Leonid Baranov; Theodore H. Fedynyshyn; Susan Cann
Show Abstract
Reducing LER using a grazing incidence ion beam
Author(s): C. R. M. Struck; R. Raju; M. J Neumann; D. N. Ruzic
Show Abstract
Resist fundamentals for resolution, LER, and sensitivity (RLS) performance tradeoffs and their relation to micro-bridging defects
Author(s): Benjamin Rathsack; Kathleen Nafus; Shinichi Hatakeyama; Yuhei Kuwahara; Junichi Kitano; Roel Gronheid; Alessandro Vaglio Pret
Show Abstract
PAG segregation during exposure affecting innate material roughness
Author(s): Theodore H. Fedynyshyn; David K. Astolfi; Alberto Cabral; Susan Cann; Indira Pottebaum; Jeanette M. Roberts
Show Abstract
Chalcogenide glass thin film resists for grayscale lithography
Author(s): A. Kovalskiy; J. Cech; C. L. Tan; W. R. Heffner; E. Miller; C. M. Waits; M. Dubey; W. Churaman; M. Vlcek; H. Jain
Show Abstract
Defect reduction by using point-of-use filtration in a new coater/developer
Author(s): Toru Umeda; Shuichi Tsuzuki; Toru Numaguchi
Show Abstract
CDU improvement with wafer warpage control oven for high-volume manufacturing
Author(s): T. Tomita; H. Weichert; S. Hornig; S. Trepte; H. Shite; R. Uemura; J. Kitano
Show Abstract
Gap-fill type HSQ/ZEP520A bilayer resist process-(III): optimal process window for HSQ air-tip formation
Author(s): Wei-Su Chen; Ming-Jinn Tsai
Show Abstract
Feasibility studies of coating method for planarization process
Author(s): Kentaro Matsunaga; Tomoya Oori; Hirokazu Kato; Eishi Shiobara; Makoto Muramatsu; Mitsuaki Iwashita; Takahiro Kitano; Yusuke Horiguchi; Tomoya Ohashi; Satoshi Takei; Shinichi Ito
Show Abstract
Contact analysis studies of an ESCAP resist with scCO2 compatible additives
Author(s): Abhinav Rastogi; Gregory N. Toepperwein; Manabu Tanaka; Robert A. Riggleman; Juan J. de Pablo; Christopher K. Ober
Show Abstract
DUV-assisted e-beam resist process
Author(s): Wei-Su Chen; Yen-Cheng Li; Ming-Jinn Tsai
Show Abstract
Improved CD uniformity for chemical shrink patterning
Author(s): Lu Chen; Nikolaos Bekiaris; Timothy Michaelson; Glen Mori
Show Abstract
Fabrication of 22-nm poly-silicon gate using resist shrink technology
Author(s): Fumiko Iwao; Satoru Shimura; Tetsu Kawasaki; Masato Kushibiki; Nishimura Eiichi
Show Abstract
Properties of the novel deprotecting unit for next-generation ArF resist polymer
Author(s): Akinori Shibuya; Shuhei Yamaguchi; Yuko Yoshida; Michihiro Shirakawa
Show Abstract
Chemically amplified hybrid resist platform for i-line applications
Author(s): Medhat Toukhy; Margareta Paunescu; Zachary Bogusz; Georg Pawlowski
Show Abstract
Criteria for success in e-beam resists
Author(s): A. E. Zweber; T. Komizo; J. Levin; Z. Benes
Show Abstract
0.30k1 CH delineation with novel image reversal materials
Author(s): J. Hatakeyama; K. Katayama; T. Yoshihara; Y. Kawai; T. Ishihara
Show Abstract
KrF resists and process for implant layers at advanced nodes
Author(s): Hung-Chin Huang; Yong-Fa Huang; Steven Wu; Louis Jang; Sho-Shen Lee; George K. C. Huang; Howard Chen; Chun-Chi Yu; Tomoki Kurihara; Hitoshi Fukiya; Hiromu Yoshida; Yoshihiro Yamamoto
Show Abstract
Process-induced bias: a study of resist design, device node, illumination conditions, and process implications
Author(s): Michael Carcasi; Steven Scheer; Carlos Fonseca; Tsuyoshi Shibata; Hitoshi Kosugi; Yoshihiro Kondo; Takashi Saito
Show Abstract
Microbridge and e-test opens defectivity reduction via improved filtration of photolithography fluids
Author(s): Michael Mesawich; Michael Sevegney; Barry Gotlinsky; Santos Reyes; Patrick Abbott; Jeremy Marzani; Mario Rivera
Show Abstract
Post-develop blob defect reduction
Author(s): Masahiko Harumoto; Sei Negoro; Akihiro Hisai; Michio Tanaka; Glen Mori; Mark Slezak
Show Abstract
Embedded micro/nano channel formation for three-dimensional negative-tone photoresist microstructuring
Author(s): Sang-Kon Kim; Hye-Keun Oh; Young-Dae Jung; Ilsin An
Show Abstract
Analysis of the effect of point-of-use filtration on microbridging defectivity
Author(s): J. Braggin; R. Gronheid; S. Cheng; D. Van Den Heuvel; S. Bernard; P. Foubert; C. Rosslee
Show Abstract
Novel resist for replica preparation of mold for imprint lithography
Author(s): Daisaku Matsukawa; Hiroyuki Wakayama; Kazuyuki Mitsukura; Haruyuki Okamura; Yoshihiko Hirai; Masamitsu Shirai
Show Abstract
Pressure control for reduced microbubble formation
Author(s): Jennifer Braggin
Show Abstract
Productivity improvement in the wafer backside cleaning before exposure
Author(s): S. Nishikido; T. Kitano; Y. Tokunaga; Marlene Strobl; Yu Chen Lin
Show Abstract
Development of novel UV cross-linkable materials for enhancing planarity in via applications via the correlation of simulated and experimental analyses
Author(s): Satoshi Takei; Michael W. Lin; Sangwoong Yoon; Tomoya Ohashi; Yasuyuki Nakajima; C. Grant Willson
Show Abstract
Comparison of thermal flow and chemical shrink processes for 193 nm contact hole patterning
Author(s): Takanori Kudo; Charito Antonio; John Sagan; Srinivasan Chakrapani; Deepa Parthasarathy; Sungeun Hong; Muthiah Thiyagarajan; Yi Cao; Munirathna Padmanaban
Show Abstract
Investigation of the foot-exposure impact in hyper-NA immersion lithography when using thin anti-reflective coating
Author(s): Darron Jurajda; Enrico Tenaglia; Jonathan Jeauneau; Danilo De Simone; Zhimin Zhu; Paolo Piazza; Paolo Piacentini; Paolo Canestrari
Show Abstract
Organic underlayer materials with exceptionally high thermal stability
Author(s): Hwan-Sung Cheon; Kyong-Ho Yoon; Min-Soo Kim; Sung Bae Oh; Jee-Yun Song; Nataliya Tokareva; Jong-Seob Kim; Tuwon Chang
Show Abstract
Effects of carbon/hardmask interactions on hardmask performance
Author(s): Charles J. Neef; Brian Smith; Chris James; Zhimin Zhu; Michael Weigand
Show Abstract
Improving the performance of light-sensitive developer-soluble anti-reflective coatings by using adamantyl terpolymers
Author(s): Jim D. Meador; Joyce A. Lowes; Charlyn Stroud; Sherilyn Thomas; Yilin Qiu; Ramil-Marcelo L. Mercado; Victor Pham; Mark Slezak
Show Abstract
Controlling etch properties of silicon-based antireflective spin-on hardmask materials
Author(s): Sang Kyun Kim; Hyeon Mo Cho; Changsoo Woo; Sang Ran Koh; Mi-Young Kim; Hui Chan Yoon; Woojin Lee; Seung-Wook Shin; Jong Seob Kim; Tuwon Chang
Show Abstract
Modified trilayer resist approach for ArF immersion lithography
Author(s): Tae-Hwan Oh; Yunsuk Nam; Suhyun Kim; Minkeun Kwak; Hyungsam Choi; Chansam Chang; Yongchul Kim; Hong-Jae Shin; Nae-In Lee
Show Abstract
Radiation sensitive developable bottom anti-reflective coatings (DBARC): recent results
Author(s): Francis M. Houlihan; Alberto Dioses; Takanori Kudo; Meng Li; Lin Zhang; Sumathy Vasanthan; Srinivasan Chakrapani; Deepa Parthasarathy; Charito Antonio; Edward Ng; Ping-Hung Lu; Mark Neisser; Munirathna Padmanaban
Show Abstract
Immersion BARC for hyper NA applications
Author(s): Wan-Ju Tseng; Wen Liang Huang; Bill Lin; Bo Jou Lu; Tsung Ju Yeh; E. T. Liu; Chun Chi Yu; Sue Ryeon Kim; Jeong Yun Yu; Gerald Wayton; Sook Lee; Sabrina Wong; Chaoyang Lin; Maurizio Ciambra; Suzanne Coley; David Praseuth; Kathleen O'Connell; George Barclay
Show Abstract
Reflection control for immersion lithography: a single organic antireflectant over high-reflective substrates for double patterning
Author(s): Sabrina Wong; Jeong Yun Yu; Sue Ryeon Kim; Mike Mori; Amy Kwok; Kathleen M. O'Connell; George Barclay; Ki Lyoung Lee; Sung Koo Lee; Cheol Kyu Bok
Show Abstract
Utilization of spin-on and reactive ion etch critical dimension shrink with double patterning for 32 nm and beyond contact level interconnects
Author(s): Karen Petrillo; Dave Horak; Susan Fan; Erin McLellan; Matt Colburn; Andrew Metz; Shannon Dunn; Dave Hetzer; Jason Cantone; Kenichi Ueda; Tom Winter; Vaidyanathan Balasubramaniam; Cherry Tang; Mark Slezak
Show Abstract
Optical threshold layer and intermediate state two-photon PAG approaches to double exposure lithography
Author(s): Adam J. Berro; Xinyu Gu; Naphtali O'Connor; Steffen Jockusch; Tomoki Nagai; Toshiyuki Ogata; Paul Zimmerman; Bryan J. Rice; Elizabeth Adolph; Travis Byargeon; Jose Gonzalez; Nicholas J. Turro; C. Grant Willson
Show Abstract
Fundamental study of optical threshold layer approach towards double exposure lithography
Author(s): Xinyu Gu; Adam J. Berro; Younjin Cho; Kane Jen; Saul Lee; Tomoki Ngai; Toshiyuki Ogata; William J. Durand; Arunkumar Sundaresan; Jeffrey R. Lancaster; Steffen Jockusch; Paul Zimmerman; Nicholas J. Turro; C. Grant Willson
Show Abstract
CD uniformity improvement for double-patterning lithography (litho-litho-etch) using freezing process
Author(s): Hisanori Sugimachi; Hitoshi Kosugi; Tsuyoshi Shibata; Junichi Kitano; Koichi Fujiwara; Kouji Itou; Michihiro Mita; Akimasa Soyano; Shiro Kusumoto; Motoyuki Shima; Yoshikazu Yamaguchi
Show Abstract
Contact formation with extremely low proximity effect by double patterning technology
Author(s): C. W. Yeh; S. S. Yu; H. J. Lee; C. H. Huang; Elvis Yang; T. H. Yang; K. C. Chen; Chih-Yuan Lu
Show Abstract
Double imaging with resist freezing in a vapor reaction chamber
Author(s): Ralph R. Dammel; Yusuke Takano; Richard Collett; David J. Abdallah
Show Abstract
Study of the simulation parameter for EUVL
Author(s): Atsushi Sekiguchi
Show Abstract
Process latitude simulation of positive-tone litho-litho-etch double patterning
Author(s): Wallace P. Printz; Steven A. Scheer
Show Abstract
Performance of an ArF siloxane BARC exposed to a 172-nm UV cure for double patterning applications
Author(s): Ze-Yu Wu; Joseph Kennedy; Song-Yuan Xie; Ron Katsanes; Kyle Flanigan; Junyan Dai; Nikolaos Bekiaris; Hiram Cervera; Glen Mori; Thomas Wallow
Show Abstract
Resolution and LWR improvements by acid diffusion control in EUV lithography
Author(s): Hideaki Tsubaki; Tooru Tsuchihashi; Tomotaka Tsuchimura
Show Abstract
Underlayer designs to enhance the performance of EUV resists
Author(s): Hao Xu; James M. Blackwell; Todd R. Younkin; Ke Min
Show Abstract
EUV lithography for 30nm half pitch and beyond: exploring resolution, sensitivity, and LWR tradeoffs
Author(s): E. Steve Putna; Todd R. Younkin; Manish Chandhok; Kent Frasure
Show Abstract
Development of EUV resists at Selete
Author(s): Hiroaki Oizumi; Daisuke Kawamura; Koji Kaneyama; Shinji Kobayashi; Toshiro Itani
Show Abstract
Non-chemically amplified negative resist for EUV lithography
Author(s): Masamitsu Shirai; Koichi Maki; Haruyuki Okamura; Koji Kanayama; Toshiro Itani
Show Abstract
Pattern transfer process development for EUVL
Author(s): Daisuke Kawamura; Yuusuke Tanaka; Toshiro Itani; Eiichi Soda; Noriaki Oda
Show Abstract
EUV resist outgassing quantification and application
Author(s): Shinji Kobayashi; Julius Joseph Santillan; Hiroaki Oizumi; Toshiro Itani
Show Abstract
EUV resist processing in vacuum
Author(s): Koji Kaneyama; Shinji Kobayashi; Toshiro Itani
Show Abstract
Non-ionic PAG behavior under high energy exposure sources
Author(s): Richard A. Lawson; David E. Noga; Laren M. Tolbert; Clifford L. Henderson
Show Abstract
Sensitivity of EUV resists to out-of-band radiation
Author(s): Jeanette M. Roberts; Robert L. Bristol; Todd R. Younkin; Theodore H. Fedynyshyn; David K. Astolfi; Alberto Cabral
Show Abstract
Dissolution kinetics and deprotection reaction in chemically amplified resists upon exposure to extreme ultraviolet radiation
Author(s): Hiroki Yamamoto; Takahiro Kozawa; Seiichi Tagawa; Takeyoshi Mimura; Takeshi Iwai; Junichi Onodera
Show Abstract
Evaluation of alcoholic hydroxyl derivatives for chemically amplified extreme ultraviolet resist
Author(s): Kikuo Furukawa; Takahiro Kozawa; Seiichi Tagawa
Show Abstract
Evaluation of novel resist materials for EUV lithography
Author(s): Ichihiro Aratani; Shuji Matsunaga; Tsuyoshi Kajiyashiki; Takeo Watanabe; Hiroo Kinoshita
Show Abstract
Evaluation of track performance for EUV lithography
Author(s): Keiichi Tanaka; Junji Nakamura; Yoshiaki Yamada; Shinji Kobayashi; Toshiro Itani
Show Abstract
CD and defect improvement challenges for immersion processes
Author(s): Keisuke Ehara; Tatsuhiko Ema; Toshinari Yamasaki; Seiji Nakagawa; Seiji Ishitani; Akihiko Morita; Jeonghun Kim; Masashi Kanaoka; Shuichi Yasuda; Masaya Asai
Show Abstract
Defect reduction in non-topcoat resist by selective segregation removal step
Author(s): Takuya Hagiwara; Mamoru Terai; Takeo Ishibashi; Tomofumi Miyauchi; Shinya Hori; Teruhiko Kumada; Tomoya Kumagai; Atsushi Sawano; Kosuke Doi; Takeshi Matsunobe; Naoki Man; Hirofumi Seki; Yusaku Tanahashi; Tetsuro Hanawa
Show Abstract
Characterization of film cut position at wafer bevel for effective immersion lithography process
Author(s): Kazuyuki Matsumaro; Miyoshi Seki; Takeshi Kato
Show Abstract
High-index nanocomposite photoresist for 193-nm lithography
Author(s): Woo Jin Bae; Makros Trikeriotis; Robert Rodriguez; Michael F. Zettel; Emil Piscani; Christopher K. Ober; Emmanuel P. Giannelis; Paul Zimmerman
Show Abstract
Non-topcoat process development for ArF immersion lithography
Author(s): Takehiko Naruoka; Nobuji Matsumura; Akimasa Soyano; Shiro Kusumoto; Yoshikazu Yamaguchi; Hiroshi Arima; Yuichi Yoshida; Kousuke Yoshihara; Tsuyoshi Shibata
Show Abstract
Backside EBR process performance with various wafer properties
Author(s): Tomohiro Goto; Kazuhito Shigemori; Rik Vangheluwe; Daub Erich; Masakazu Sanada
Show Abstract
High refractive index nanoparticle fluids for 193-nm immersion lithography
Author(s): Markos Trikeriotis; Robert Rodriguez; Michael F. Zettel; Aristeidis Bakandritsos; Woo Jin Bae; Paul A. Zimmerman; Christopher K. Ober; Emmanuel P. Giannelis
Show Abstract
Defectivity process optimization on immersion topcoat less resist stacks
Author(s): Kazuhito Shigemori; Suping Wang; Len Tedeschi; Gazi Tanriseven; Raymond Maas; Coen Verspaget; Ruud Marechal; Ad Lammers; Joerg Mallmann; Masahiko Harumoto; Akihiro Hisai; Masaya Asai
Show Abstract
Reduction of line width and edge roughness by resist reflow process for extreme ultra-violet lithography
Author(s): In Wook Cho; Joon-Min Park; Hyunsu Kim; Joo-Yoo Hong; Seong-Sue Kim; Han-Ku Cho; Hye-Keun Oh
Show Abstract
Line edge and width roughness dependency on each ingredient of extreme ultraviolet molecular resist
Author(s): Hyunsu Kim; In Wook Cho; Seong-Sue Kim; Han-Ku Cho; Hye-Keun Oh
Show Abstract
A study of the photo acid generator material design for chemically amplified photoresists
Author(s): Y. Utsumi; T. Seshimo; Y. Komuro; A. Kawaue; K. Ishiduka; K. Matsuzawa; Hideo Hada; J. Onodera
Show Abstract
Stochastic modeling in lithography: autocorrelation behavior of catalytic reaction-diffusion systems
Author(s): Chris A. Mack
Show Abstract
Important challenges for line-width-roughness reduction
Author(s): Hidetami Yaegashi; M. Kushibiki; E. Nishimura; S. Shimura; F. Iwao; T. Kawasaki; K. Hasebe; H. Murakami; A. Hara; K. Yabe
Show Abstract
Stochastic modeling in lithography: the use of dynamical scaling in photoresist development
Author(s): Chris A. Mack
Show Abstract
Image reversal trilayer process using standard positive photoresist
Author(s): David J. Abdallah; John Sagan; Kazunori Kurosawa; Jin Li; Yusuke Takano; Yasuo Shimizu; Ninad Shinde; Tatsuro Nagahara; Tomonori Ishikawa; Ralph R. Dammel
Show Abstract
Quantitative measurement of the molecular-mass distribution in calix[4]resorcinarene molecular glass resists by mass spectrometry
Author(s): W. E. Wallace; K. M. Flynn; C. M. Guttman; D. L. VanderHart; V. M. Prabhu; A. De Silva; N. M. Felix; C. K. Ober
Show Abstract
Adamantane-based molecular glass resist for 193-nm lithography
Author(s): Shinji Tanaka; Miki Murakami; Kazuya Fukushima; Naoya Kawano; Yohitaka Uenoyama; Katsuki Ito; Hidetoshi Ohno; Nobuaki Matsumoto
Show Abstract
Molecular glass resists for next-generation lithography
Author(s): Marie Krysak; Anuja De Silva; Jing Sha; Jin-Kyun Lee; Christopher K. Ober
Show Abstract
Reworkable spin-on trilayer materials: optimization of rework process and solutions for manufacturability
Author(s): Ruzhi Zhang; Allen G. Timko; John Zook; Yayi Wei; Lyudmila Pylneva; Yi Yi; Chenghong Li; Hengpeng Wu; Dalil Rahman; Douglas S. McKenzie; Clement Anyadiegwu; Ping-Hung Lu; Mark Neisser; Ralph R. Dammel; Ron Bradbury; Timothy Lee
Show Abstract
Development of new phenylcalix[4]resorcinarene: its application to positive-tone molecular resist for EB and EUV lithography
Author(s): Masatoshi Echigo; Dai Oguro
Show Abstract
Development of novel positive-tone resists for EUVL
Author(s): Takanori Owada; Akinori Yomogita; Takashi Kashiwamura; Toshiaki Kusaba; Shinji Miyamoto; Tetsuro Takeya
Show Abstract
Molecular glass resists developable in supercritical carbon dioxide for 193 nm lithography
Author(s): Jing Sha; Jin-Kyun Lee; Christopher K. Ober
Show Abstract
Molecular resists based on calix[4]resorcinarene derivatives for EB lithography
Author(s): Kenichi Okuyama
Show Abstract
Practical implementation of immersion resist materials
Author(s): Hamid Khorram; Katsushi Nakanob; Tomoharu Fujiwara; Yasuhiro Iriuchijima; Y. Ishii; Natsuko Sagawa; Tadamasa Kawakubo; Shirou Nagaoka
Show Abstract
Analysis of molecular resist distribution in a resist film by using x-ray reflectivity
Author(s): Jeongsik Kim; Jae-Woo Lee; Deogbae Kim; Jaehyun Kim; Sung-Il Ahn; Wang-Cheol Zin
Show Abstract
Theoretical analysis of energy degradation of electrons in the resists
Author(s): Minoru Toriumi
Show Abstract
Theoretical analysis of development behavior of resist measured by QCM
Author(s): Minoru Toriumi
Show Abstract
Temperature and critical dimension variation in a single wafer on hot plate due to non-uniform heat source
Author(s): Bobae Kim; Joon-Min Park; Hyunsu Kim; Ilsin An; Seung-Wook Park; Hye-Keun Oh
Show Abstract
Decomposition analysis of molecular resists to further CD control
Author(s): Daiju Shiono; Hideo Hada; Taku Hirayama; Junichi Onodera; Takeo Watanabe; Hiroo Kinoshita
Show Abstract
Diffusion of acid and amine at resist/BARC interface
Author(s): Masamitsu Shirai; Noriaki Majima; Haruyuki Okamura; Yoshiomi Hiroi; Shigeo Kimura; Yasuyuki Nakajima
Show Abstract
EUV resist requirements: absorbance and acid yield
Author(s): Roel Gronheid; Carlos Fonseca; Michael J. Leeson; Jacob R. Adams; Jeffrey R. Strahan; C. Grant Willson; Bruce W. Smith
Show Abstract
Study of residue type defect formation mechanism and the effect of advanced defect reduction (ADR) rinse process
Author(s): Hiroshi Arima; Yuichi Yoshida; Kosuke Yoshihara; Tsuyoshi Shibata; Yuki Kushida; Hiroki Nakagawa; Yukio Nishimura; Yoshikazu Yamaguchi
Show Abstract
Characteristic three-dimensional structure of resist's distribution after drying a resist solution coated on a flat substrate: analysis using the extended dynamical model of the drying process
Author(s): Hiroyuki Kagami
Show Abstract
Polymer dissolution model: an energy adaptation of the critical ionization theory
Author(s): Siddharth Chauhan; Mark Somervell; Steven Scheer; Chris A. Mack; Roger T. Bonnecaze; C. Grant Willson
Show Abstract
Meso-scale simulation of the polymer dynamics in the formation process of line-edge roughness
Author(s): Hiroshi Morita; Masao Doi
Show Abstract
Development of polymers for non-CAR resists for EUV lithography
Author(s): Andrew K. Whittaker; Idriss Blakey; James Blinco; Kevin S. Jack; Kirsten Lawrie; Heping Liu; Anguang Yu; Michael Leeson; Wang Yeuh; Todd Younkin
Show Abstract
Line edge roughness transfer during plasma etching: modeling approaches and comparison with experimental results
Author(s): Vassilios Constantoudis; George Kokkoris; Panayiota Xydi; Evangelos Gogolides; Erwine Pargon; Mickael Martin
Show Abstract
Defectivity issues in topcoat-free photoresists
Author(s): Karen Petrillo; Rick Johnson; Will Conley; Jason Cantone; Dave Hetzer; Shannon Dunn; Tom Winter; Youri van Dommelen; Aiqin Jiang
Show Abstract
Engine for characterization of defects, overlay, and critical dimension control for double exposure processes for advanced logic nodes
Author(s): Steven Holmes; Chiew-Seng Koay; Karen Petrillo; Kuang-Jung Chen; Matthew E. Colburn; Jason Cantone; Kenichi Ueda; Andrew Metz; Shannon Dunn; Youri van Dommelen; Michael Crouse; Judy Galloway; Emil Schmitt-Weaver; Aiquin Jiang; Robert Routh; Cherry Tang; Mark Slezak; Sumanth Kini; Tony DiBiase
Show Abstract
Understanding pattern collapse in high-resolution lithography: impact of feature width on critical stress
Author(s): David E Noga; Richard A. Lawson; Cheng-Tsung Lee; Laren M. Tolbert; Clifford L Henderson
Show Abstract

© SPIE. Terms of Use
Back to Top