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Proceedings of SPIE Volume 7216

Gallium Nitride Materials and Devices IV
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Volume Details

Volume Number: 7216
Date Published: 12 February 2009
Softcover: 48 papers (470) pages
ISBN: 9780819474629

Table of Contents
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Front Matter: Volume 7216
Author(s): Proceedings of SPIE
High-power AlGaN/GaN HFETs on Si substrates for power-switching applications
Author(s): Nariaki Ikeda; Jiang Lee; Syuusuke Kaya; Masayuki Iwami; Takehiko Nomura; Sadahiro Katoh
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Predicting the performance of a power amplifier using large-signal circuit simulations of an AlGaN/GaN HFET model
Author(s): Griff L. Bilbro; Danqiong Hou; Hong Yin; Robert J. Trew
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Design of insulator/AlGaN structures in MIS AlGaN/GaN HFETs for higher device performance
Author(s): Narihiko Maeda; Masanobu Hiroki; Takatomo Enoki; Takashi Kobayashi
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Recent advances of high voltage AlGaN/GaN power HFETs
Author(s): Yasuhiro Uemoto; Tetsuzo Ueda; Tsuyoshi Tanaka; Daisuke Ueda
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Hot phonons in InAlN/AlN/GaN heterostructure 2DEG channels
Author(s): Arvydas Matulionis; Hadis Morkoç
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Growth of high-quality large GaN crystal by Na flux LPE method
Author(s): F. Kawamura; M. Imade; M. Yoshimura; Y. Mori; Y. Kitaoka; T. Sasaki
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Wurtzitic semiconductors heterostructures grown on (hk.l) oriented substrates: the interplay between spontaneous and piezoelectric polarization fields, elastic energy, and the modification of quantum confined Stark effect
Author(s): Bernard Gil
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Growth of high quality AlN on sapphire by using a low-temperature AlN interlayer
Author(s): Hsueh-Hsing Liu; Guan-Ting Chen; Yung-Ling Lan; Geng-Yen Lee; Jen-Inn Chyi
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Characteristics of narrow-bandgap InN semiconductors grown on Ga-polar and N-polar GaN templates by pulsed metalorganic vapor phase epitaxy
Author(s): Hongping Zhao; Hua Tong; Alexandra M. Driscoll; Muhammad Jamil; G. S. Huang; Nelson Tansu
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Fabrication of position-controlled InN nanocolumns by ECR-MBE
Author(s): T. Araki; D. Fukuoka; H. Tamiya; S. Harui; H. Miyake; K. Hiramatsu; Y. Nanishi
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Investigation of vertical current-voltage characteristics of Al(Ga)N/GaN RTD-like heterostructures
Author(s): J. Lee; Q. Fan; X. Ni; U. Ozgur; V. Litvinov; H. Morkoç
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Terahertz emission and spectroscopy on InN epilayer and nanostructure
Author(s): H. Ahn; C.-L. Pan; S. Gwo
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Surface control of GaN alloys for photonic and electronic devices
Author(s): Tamotsu Hashizume; Nanako Shiozaki; Kota Ohi
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Current spreading and its related issues in GaN-based light emitting diodes
Author(s): Jong-In Shim; Joosun Yun; Hyunsung Kim
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Surface charge lithography for GaN micro- and nanostructuring
Author(s): Ion M. Tiginyanu; Veaceslav Popa; Andrei Sarua; Peter J. Heard; Olesea Volciuc; Martin Kuball
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Investigation of the electrical activity of V-defects in GaN using scanning force microscopy
Author(s): André Lochthofen; Wolfgang Mertin; Gerd Bacher; Lutz Hoeppel; Stefan Bader; Jürgen Off; Berthold Hahn
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Improved hydrogen detection sensitivity of a Pt/Ga2O3/GaN diode
Author(s): Jheng-Tai Yan; Chun-Yen Tseng; Chia-Hsun Chen; Ching-Ting Lee
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Effect of ambient on electrical and optical properties of GaN
Author(s): M. A. Reshchikov; M. Foussekis; A. A. Baski; H. Morkoç
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Nitride laser diode arrays
Author(s): K. Holc; M. Leszczynski; T. Suski; R. Czernecki; H. Braun; U. Schwartz; P. Perlin
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Room temperature polariton lasing in III-nitride microcavities: a comparison with blue GaN-based vertical cavity surface emitting lasers
Author(s): Raphaël Butté; Gabriel Christmann; Eric Feltin; Antonino Castiglia; Jacques Levrat; Gatien Cosendey; Alexei Altoukhov; Jean-François Carlin; Nicolas Grandjean
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Blue GaN-based vertical cavity surface emitting lasers by CW current injection at 77K
Author(s): H. C. Kuo; S. W. Chen; T. T. Kao; C. C. Kao; J. R. Chen; T. C. Lu; S. C. Wang
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Growth and conductivity control of high quality AlGaN and its application to high-performance ultraviolet laser diodes
Author(s): H, Amano; K. Nagamatsu; K. Takeda; T. Mori; H. Tsuzuki; M. Iwaya; S. Kamiyama; I. Akasaki
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Temperature dependence of blue InGaN lasers
Author(s): Stefanie Brüninghoff; Sönke Tautz; Matthias Sabathil; Désirée Queren; Stephan Lutgen; Uwe Strauß
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Improvement in light extraction efficiency of high brightness InGaN-based light emitting diodes
Author(s): Tzer-Perng Chen; Ta-Cheng Hsu; Chuan-yu Luo; Ming-Chi Hsu; Tsung-Xian Lee
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Emission of biased green quantum wells in time and wavelength domain
Author(s): Ulrich T. Schwarz
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Reduction of efficiency droop in InGaN-based blue LEDs
Author(s): X. Ni; X. Li; J. Xie; Q. Fan; R. Shimada; Ü. Özgür; H. Morkoç
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Employment of III-nitride/silicon heterostructures for dual-band UV/IR photodiodes
Author(s): R. Pillai; D. Starikov; C. Boney; A. Bensaoula
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Recent development of nitride LEDs and LDs
Author(s): Atsuo Michiue; Takashi Miyoshi; Tomoya Yanamoto; Tokuya Kozaki; Shin-ichi Nagahama; Yukio Narukawa; Masahiko Sano; Takao Yamada; Takashi Mukai
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222-282 nm AlGaN and InAlGaN based deep-UV LEDs fabricated on high-quality AlN template
Author(s): Hideki Hirayama; Norimichi Noguchi; Sachie Fujikawa; Jun Norimatsu; Norihiko Kamata; Takayoshi Takano; Kenji Tsubaki
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Green light emission from selectively grown InGaN multiple quantum well stripes oriented along [11-20] direction
Author(s): W. Feng; V. V. Kuryatkov; M. Pandikunta; S. A. Nikishin; M. Holtz
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Femtosecond pump-probe characterization of high-pressure grown AlxGa1-xN single crystals
Author(s): Jie Zhang; A. Belousov; S. Katrych; J. Jun; J. Karpinski; B. Batlogg; Roman Sobolewski
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Multi-color light-emitting diodes based on GaN microstructures
Author(s): M. Funato; Y. Kawakami; Y. Narukawa; T. Mukai
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Multiple functional UV devices based on III-Nitride quantum wells for biological warfare agent detection
Author(s): Qin Wang; Susan Savage; Sirpa Persson; Bertrand Noharet; Stéphane Junique; Jan Y. Andersson; Vytautas Liuolia; Saulius Marcinkevicius
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Fabrication technique for moth-eye structure using low-energy electron-beam projection lithography for high-performance blue-light-emitting diode on SiC substrate
Author(s): T. Seko; S. Mabuchi; F. Teramae; A. Suzuki; Y. Kaneko; R. Kawai; S. Kamiyama; M. Iwaya; H. Amano; I. Akasaki
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Array of GaN-based transverse junction blue light emitting diodes with regrown n-type regimes
Author(s): Shi-Hao Guol; H.-W. Huang; C.-S. Lin; J.-K. Sheu; C.-J. Tin; C.-H. Kuo; Jin-Wei Shi
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AlGaN/GaN HEMT And ZnO nanorod-based sensors for chemical and bio-applications
Author(s): B. H. Chu; B. S. Kang; H. T. Wang; C. Y. Chang; T, Lele; Y. Tseng; A. Goh; A. Sciullo; W. S. Wu; J. N. Lin; B. P. Gila; S. J. Pearton; J. W. Johnson; E. L. Piner; K. J. Linthicum; F. Ren
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Growth and characterization of isotopic (nat)Ga(15)N by molecular-beam epitaxy
Author(s): Yong-zhao Yao; Takeshi Ohgaki; Kenji Matsumoto; Isao Sakaguchi; Yoshiki Wada; Hajime Haneda; Takashi Sekiguchi; Naoki Ohashi
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GaN-based vertical cavities on highly reflective and crack-free nitride distributed Bragg reflectors
Author(s): X. Ni; R. Shimada; T. D. Kang; J. Leach; Ü. Özgür; H. Morkoç
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Carrier screening effect in AlGaN quantum-well avalanche photodiode
Author(s): Sheng-Kun Zhang; Wubao Wang; Robert R. Alfano; Amir M. Dabiran; Andrew M. Wowchak; Peter P. Chow
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Nitride-based p-i-n photodetectors with Ni catalyst processing
Author(s): Chin-Hsiang Chen
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Piezoelectric quantum 1/f noise in AlGaN HFETs and reliability
Author(s): Peter H. Handel; Hadis Morkoç
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Employment of III-nitride/silicon heterostructures for dual-band UV/IR photodiodes
Author(s): R. Pillai; D. Starikov; C. Boney; A. Bensaoula
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Transient current spectroscopy of lattice matched InAlN/AlN/GaN HFETs for identification of traps resulting in gate lag
Author(s): J. H. Leach; Q. Fan; J. Xie; M. Wu; Ü. Özgür; H. Morkoç
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Ferroelectric field effect transistor with a double-gate structure on AlGaN/GaN heterostructures
Author(s): Bo Xiao; Jinqiao Xie; Vitaliy Avrutin; Qian Fan; Mo Wu; Hadis Morkoç
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Two dimensional electron gas in GaN heterojunction field effect transistors structures with AlN spacer
Author(s): Qian Fan; Jacob H. Leach; Jinqiao Xie; Umit Ozgur; Hadis Morkoç; L. Zhou; D. J. Smith
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Improved surface morphology and edge definition for ohmic contacts to AlGaN/GaN heterostructures
Author(s): Yung-Ling Lan; Hung-Cheng Lin; Hsueh-Hsing Liu; Geng-Yen Lee; Fan Ren; Stephen J. Pearton; Mao-Nan Chang; Jen-Inn Chyi
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Light extraction improvement of GaN-based light-emitting diodes using patterned undoped GaN bottom reflection gratings
Author(s): Simeon Trieu; Xiaomin Jin; Bei Zhang; Tao Dai; Kui Bao; Xiang-Ning Kang; Guo-Yi Zhang
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Electrical defects in AlGaN and InAlN
Author(s): D. Johnstone; Jacob H. Leach; Vladimir A. Kovalskii; Qian Fan; Jingqiao Xie; Hadis Morkoç
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