Share Email Print
cover

Proceedings of SPIE Volume 7140

Lithography Asia 2008
Format Member Price Non-Member Price
Softcover $105.00 * $105.00 *

*Available as a photocopy reprint only. Allow two weeks reprinting time plus standard delivery time. No discounts or returns apply.


Volume Details

Volume Number: 7140
Date Published: 4 December 2008
Softcover: 103 papers (982) pages
ISBN: 9780819473813

Table of Contents
show all abstracts | hide all abstracts
Front Matter: Volume 7140
Author(s): Proceedings of SPIE
EUVL contamination control studies for high-volume manufacturing
Author(s): D. N. Ruzic; R. Raju; J. Sporre; H. Shin; W. M. Lytle; M. J. Neumann
Show Abstract
Full field EUV lithography: lessons learned on EUV ADT imaging, EUV resist, and EUV reticles
Author(s): E. Hendrickx; A. M. Goethals; A. Niroomand; R. Jonckheere; F. Van Roey; G. F. Lorusso; J. Hermans; B. Baudemprez; K. Ronse
Show Abstract
Current benchmarking results of EUV resist at Selete
Author(s): Daisuke Kawamura; Koji Kaneyama; Shinji Kobayashi; Hiroaki Oizumi; Toshiro Itani
Show Abstract
Methodology of flare modeling and compensation in EUVL
Author(s): Insung Kim; Hoyoung Kang; Changmin Park; Joo-On Park; Jeonghoon Lee; Jinhong Park; Doohoon Goo; Jeongho Yeo; Seong-Woon Choi; Woosung Han
Show Abstract
What is the strongest candidate in lithography for 2x nm HP and beyond? 
Author(s): Kohji Hashimoto; Ikuo Yoneda; Takeshi Koshiba; Shinji Mikami; Takumi Ota; Masamitsu Ito; Tetsuro Nakasugi; Tatsuhiko Higashiki
Show Abstract
Nano-imprint fabrication and light extraction simulation of photonic crystals on OLED
Author(s): Jay Wang-Chieh Yu; Yoo-Bin Guo; Jiun-Yeu Chen; Franklin Chau-Nan Hong
Show Abstract
The CD metrology perspectives and future trends
Author(s): J. Foucher; E. Pargon; M. Martin; V. Farys; S. Bécu; L. Babaud
Show Abstract
Optimizing integrated optical CD monitoring by floating pre-process variations in a complex multi-layer structure
Author(s): Marlene Strobl; Lisa Huang; Allen Li; Ying Luo; Youxian Wen
Show Abstract
Improving sidewall profile metrology with enhanced 3D-AFM
Author(s): Tianming Bao; Lars Mininni; Dean Dawson
Show Abstract
Accurate dimensional characterization of periodic structures by spectroscopic Mueller polarimetry
Author(s): M. Foldyna; A. De Martino; D. Cattelan; F. Bogeat; C. Licitra; J. Foucher; P. Barritault; J. Hazart
Show Abstract
Characterization of inhomogeneous samples by spectroscopic Mueller polarimetry
Author(s): M. Foldyna; A. De Martino; R. Ossikovski; E. Garcia-Caurel; D. Cattelan; C. Licitra
Show Abstract
An update on the DPL overlay discontinuity
Author(s): Mike Adel
Show Abstract
Advance overlay correction beyond 32nm DRAM process
Author(s): Chia Tsung Hung; Chung Ping Hsia; Tzu Shen Cheng; Chun Yen Huang; Wen Bin Wu; Chiang Lin Shih
Show Abstract
A comprehensive look at a new metrology technique to support the needs of lithography performance in near future
Author(s): Jimmy Hu; Chih-Ming Ke; Willie Wang; Jacky Huang; H. L. Chung; C. R. Liang; Victor Shih; H. H. Liu; H. J. Lee; L. G. Terng; Y. D. Fan; Maurits van der Schaar; Kiwi Yuan; Vivien Wang; Cathy Wang; Mir Shahrjerdy; Andreas Fuchs; Kaustuve Bhattacharyya; Karel van der Mast
Show Abstract
Focus and dose control for high volume manufacturing
Author(s): Hideki Ina; Koichi Sentoku
Show Abstract
Lithography hotspot discovery at 70nm DRAM 300mm fab: process window qualification using design base binning
Author(s): Daniel Chen; Damian Chen; Ray Yen; Mingjen Cheng; Andy Lan; Rajesh Ghaskadvi
Show Abstract
Accelerating 32nm BEOL technology development by advanced wafer inspection methodology
Author(s): P. R. Jeng; C. L. Lin; Simon Jang; M. S. Liang; Wallas Chen; David Tsui; Damian Chen; Henry Chen; Chris Young; Ellis Chang
Show Abstract
Reducing capital and labor costs of 193nm lithography monitoring of airborne molecular contamination (AMC) through proactive assessment and implementation of AMC monitoring techniques and strategies
Author(s): Steven Rowley; Jerry Yang; Andy Wei
Show Abstract
Advanced inspection methodologies for detection and classification of killer substrate defects
Author(s): Aris Chen; Victor Huang; Sophie Chen; C. J. Tsai; Kenneth Wu; Haiping Zhang; Kevin Sun; Jason Saito; Henry Chen; Debbie Hu; Ming Li; William Shen; Uday Mahajan
Show Abstract
Electron beam charging of a SiO2 layer on Si: a comparison between Monte Carlo-simulated and experimental results
Author(s): Kensuke Inai; Kaoru Ohya; Hideaki Kuwada; Ryosuke Kawasaki; Misako Saito; Kaoru Fujihara; Teruyuki Hayashi; Jack Jau; Kenichi Kanai
Show Abstract
Advanced technology for after-develop inspection
Author(s): Z. Y. Chen; I. C. Chou; J. H. Yang; Wallas Chen; Josh Chang; Henry Chen; Melvin Ng; Meng-Che Wu; Cathy Perry-Sullivan; Mingwei Li
Show Abstract
An innovative Source-Mask co-Optimization (SMO) method for extending low k1 imaging
Author(s): Stephen Hsu; Luoqi Chen; Zhipan Li; Sean Park; Keith Gronlund; Hua-Yu Liu; Neal Callan; Robert Socha; Steve Hansen
Show Abstract
A novel lithography design and verification methodology with patterning failure
Author(s): Seiro Miyoshi; Yuuji Kobayashi; Satoshi Tanaka; Kenji Kawano; Kohji Hashimoto; Soichi Inoue
Show Abstract
A new calibration method for latent image fidelity
Author(s): Eytan Barouch; Stephen L. Knodle
Show Abstract
An imaging system for extended ArF immersion lithography
Author(s): Tomoyuki Matsuyama; Yasuhiro Ohmura; Toshiharu Nakashima; Yusaku Uehara
Show Abstract
Immersion lithography: its history, current status and future prospects
Author(s): Soichi Owa; Hiroyuki Nagasaka
Show Abstract
Patterning performance of hyper NA immersion lithography for 32nm node logic process
Author(s): Kazuhiro Takahata; Masanari Kajiwara; Yosuke Kitamura; Tomoko Ojima; Masaki Satake; Hiroharu Fujise; Yuriko Seino; Tatsuhiko Ema; Manabu Takakuwa; Shinichiro Nakagawa; Takuya Kono; Masafumi Asano; Suigen Kyo; Akiko Nomachi; Hideaki Harakawa; Tatsuya Ishida; Shunsuke Hasegawa; Katsura Miyashita; Takashi Murakami; Seiji Nagahara; Kazuhiro Takeda; Shoji Mimotogi; Soichi Inoue
Show Abstract
Orientation Zernike Polynomials: a systematic description of polarized imaging using high NA lithography lenses
Author(s): Tilmann Heil; Johannes Ruoff; Jens Timo Neumann; Michael Totzeck; Daniel Krähmer; Bernd Geh; Paul Gräupner
Show Abstract
Resist-based polarization monitoring for 193nm high-numerical aperture lithography
Author(s): Richard Tu; Gregory McIntyre
Show Abstract
The divergence of image and resist process metrics
Author(s): John J. Biafore; Sanjay Kapasi; Stewart A. Robertson; Mark D. Smith
Show Abstract
Extending KrF lithography beyond 80nm with the TWINSCAN XT:1000H 0.93NA scanner
Author(s): Wim de Boeij; Gerald Dicker; Marten de Wit; Frank Bornebroek; Mark Zellenrath; Harm-Jan Voorma; Bart Smeets; Rene Toussaint; Bart Paarhuis; Marteijn de Jong; Dirk Hellweg; Klaus Kornitzer
Show Abstract
Development of EUV lithography tools at Nikon
Author(s): Katsuhiko Murakami; Tetsuya Oshino; Hiroyuki Kondo; Hiroshi Chiba; Kazushi Nomura; Hidemi Kawai; Yoshiaki Kohama; Kenji Morita; Kazunari Hada; Yukiharu Ohkubo; Takaharu Miura
Show Abstract
Laser-produced plasma source system development
Author(s): David C. Brandt; Igor V. Fomenkov; Alex I. Ershov; William N. Partlo; David W. Myers; Norbert R. Böwering; Georgiy O. Vaschenko; Oleh V. Khodykin; Alexander N. Bykanov; Jerzy R. Hoffman; Christopher P. Chrobak; Shailendra N. Srivastava; David A. Vidusek; Silvia De Dea; Richard R. Hou
Show Abstract
Status of DPP EUV sources development for Beta/HVM
Author(s): Masaki Yoshioka; Peter Zink; Guido Schriever; Marc Corthout
Show Abstract
A novel curve-fitting procedure for determining proximity effect parameters in electron beam lithography
Author(s): Chun-Hung Liu; Hoi-Tou Ng; Philip C. W. Ng; Kuen-Yu Tsai; Shy-Jay Lin; Jeng-Homg Chen
Show Abstract
Calculation of three-dimensional profiles of photoresist exposed by localized electric fields of high-transmission metal nano-apertures
Author(s): Eungman Lee; Jae Won Hahn
Show Abstract
Study on imaging characterization of ArF high index immersion lithography
Author(s): Sarohan Park; Jun-Taek Park; Kilyoung Lee; Tae-Seung Eom; Jin-Soo Kim; Hyeong-Soo Kim; Seung-Chan Moon
Show Abstract
Influences of various defects on extreme ultra-violet mask
Author(s): Eun-Jin Kim; Jee-Hye You; Jung-Youl Lee; Deog-Bae Kim; Jae-Hyun Kim; Hye-Keun Oh
Show Abstract
Cost of ownership for future lithography technologies
Author(s): Andrew J. Hazelton; Andrea Wüest; Greg Hughes; Lloyd C. Litt; Frank Goodwin
Show Abstract
Removal of particles from lithographic masks through plasma-assisted cleaning by metastable atomic neutralization
Author(s): W. M. Lytle; D. S. Szybilski; C. E. Das; R. Raju; V. Surla; M. J. Neumann; D. N. Ruzic
Show Abstract
Optimization of mask manufacturing rule check constraint for model based assist feature generation
Author(s): Seongbo Shim; Young-chang Kim; Yong-jin Chun; Seong-Woo Lee; Suk-joo Lee; Seong-woon Choi; Woo-sung Han; Seong-hoon Chang; Seok-chan Yoon; Hee-bom Kim; Won-tai Ki; Sang-gyun Woo; Han-gu Cho
Show Abstract
Application of multi-tone mask technology in photolithographic fabrication of color filter components in LCD
Author(s): Yoshihiro Takada; Matoko Fukui; Tsunehiro Sai
Show Abstract
Effective solution to reticle haze formation at 193nm lithography
Author(s): Wen-Jui Tseng; Shean-Hwan Chiou; Ming-Chien Chiu; Po-shin Lee
Show Abstract
A methodology for double patterning compliant split and design
Author(s): Vincent Wiaux; Staf Verhaegen; Fumio Iwamoto; Mireille Maenhoudt; Takashi Matsuda; Sergei Postnikov; Geert Vandenberghe
Show Abstract
Full-chip pitch/pattern splitting for lithography and spacer double patterning technologies
Author(s): Tsann-Bim Chiou; Robert Socha; Ho-Young Kang; Alek C. Chen; Stephen Hsu; Hong Chen; Luoqi Chen
Show Abstract
Alternative technology for double patterning process simplification
Author(s): Hee-Youl Lim; Kyo-Young Jang; Jae-Heon Kim; Sung-Gu Lee; Sarohan Park; Tae-Hwan Kim; Cheol-Kyu Bok; Seung-Chan Moon
Show Abstract
Challenges of 29nm half-pitch NAND Flash STI patterning with 193nm dry lithography and self-aligned double patterning
Author(s): M. C. Chiu; Benjamin Szu-Min Lin; M. F. Tsai; Y. S. Chang; M. H. Yeh; T. H. Ying; Chris Ngai; Jaklyn Jin; Stephen Yuen; Sem Huang; Yongmei Chen; Liyan Miao; Kevin Tai; Amiad Conley; Ian Liu
Show Abstract
Mask specification guidelines in spacer patterning technology
Author(s): Kohji Hashimoto; Hidefumi Mukai; Seiro Miyoshi; Shinji Yamaguchi; Hiromitsu Mashita; Yuuji Kobayashi; Kenji Kawano; Takashi Hirano
Show Abstract
Cluster optimization to improve CD control as an enabler for double patterning
Author(s): Len Tedeschi; Craig Rosslee; David Laidler; Philippe Leray; Koen D'havé
Show Abstract
CD uniformity improvement for 3x nm node devices
Author(s): Chang-Min Park; Hyun-Byuk Kim; Hyung-Do Kim; Hyun-Woo Kim; Cheol-Hong Kim; Joo-On Park; Doohoon Goo; Jeongho Yeo; Seong-Woon Choi; Woo-Sung Han; Min-Su Choi; Sung-Woo Hwang
Show Abstract
Using scatterometry to improve process control during the spacer pitch splitting process
Author(s): Scott Corboy; Craig MacNaughton; Thomas Gubiotti; Marcus Wollenweber
Show Abstract
Experimental proximity matching of ArF scanners
Author(s): Joost Bekaert; L. Van Look; P. De Bisschop; J. Van de Kerkhove; G, Vandenberghe; K. Schreel; J. Menger; G. Schiffelers; E. Knols; H. van der Laan; R. Willekers
Show Abstract
Exposure tool for 32-nm lithography: requirements and development progress
Author(s): Andrew J. Hazelton; Jun Ishikawa; Nobutaka Magome
Show Abstract
The impact of illuminator signatures on optical proximity effects
Author(s): Jacek K. Tyminski; Stephen P. Renwick
Show Abstract
Model based pattern matching
Author(s): Lawrence S. Melvin; Josh Tuttle; Mathias Boman
Show Abstract
Model-based sub-resolution assist features using an inverse lithography method
Author(s): Jue-Chin Yu; Peichen Yu; Hsueh-Yung Chao
Show Abstract
Optimization of RET flow using test layout
Author(s): Yunqiang Zhang; Satyendra Sethi; Kevin Lucas
Show Abstract
Image parameter-based scatter bar optimization
Author(s): Ryan Chou; Li-Tung Hsiao; H. Y. Liao; Jack Lin; Regina Shen; Jochen Schacht; Dyiann Chou; Srividya Jayaram; Pat LaCour
Show Abstract
Binary mask optimization for inverse lithography with partially coherent illumination
Author(s): Xu Ma; Gonzalo R. Arce
Show Abstract
Robust mask design with defocus variation using inverse synthesis
Author(s): Ningning Jia; Alfred K. Wong; Edmund Y. Lam
Show Abstract
Pattern freezing process free litho-litho-etch double patterning
Author(s): Tomoyuki Ando; Masaru Takeshita; Ryoich Takasu; Yasuhiro Yoshii; Jun Iwashita; Shogo Matsumaru; Sho Abe; Takeshi Iwai
Show Abstract
Novel embedded barrier layer materials for ArF non-topcoat immersion applications
Author(s): Deyan Wang; Chunyi Wu; Cheng Bai Xu; George Barclay; Peter Trefonas; Shuji Dinglee
Show Abstract
The noble resists composed of cationic and anionic polymerizable PAGs
Author(s): Jung Hoon Oh; Dong Chul Seo; Hyun Sang Joo; Sung Do Jung; Jin Ho Kim; Seung Jae Lee; Ran Ra Park; JoonHee Han; Joo Hyeon Park
Show Abstract
Reactive liquid crystal materials for optically anisotropic patterned retarders
Author(s): Richard Harding; Iain Gardiner; Hyun-Jin Yoon; Tara Perrett; Owain Parri; Karl Skjonnemand
Show Abstract
Development status of High OD photo resist for CF black matrix
Author(s): Dai Shiota; Akira Katano; Masaru Shida; Kiyoshi Uchikawa
Show Abstract
Exposure illuminance dependability in the lithography characteristic of color resist for LCD color filter
Author(s): Msanori Yashiro; Masaru Ohta
Show Abstract
Development of photosensitive silsesquioxane
Author(s): Yuji Tashiro; Takeshi Sekito; Takafumi Iwata; Daishi Yokoyama; Toshiaki Nonaka
Show Abstract
Grazing incidence ion beams for reducing LER
Author(s): C. R. M. Struck; M. J. Neumann; R. Raju; R. L. Bristol; D. N. Ruzic
Show Abstract
Development of spin-on carbon hardmasks with comparable etch resistance to Amorphous Carbon Layer (ACL)
Author(s): Hwan-Sung Cheon; Kyong-Ho Yoon; Min-Soo Kim; Seung Bae Oh; Jee-Yun Song; Nataliya Tokareva; Jong-Seob Kim; Tuwon Chang
Show Abstract
High Si content BARC for applications in dual BARC systems such as tri-layer patterning
Author(s): Joseph Kennedy; Song-Yuan Xie; Ze-Yu Wu; Ron Katsanes; Kyle Flanigan; Kevin Lee; Mark Slezak; Nicolette Fender; Junichi Takahashi
Show Abstract
Spin-on trilayer scheme: enabling materials for extension of ArF immersion lithography to 32nm node and beyond
Author(s): Ruzhi Zhang; Allen G. Timko; Lyudmila Pylneva; Jennifer Loch; Hengpeng Wu; David J. Abdallah; Richard A. Collett; Yayi Wei; Dalil Rahman; Douglas S. McKenzie; Ping-Hung Lu; Mark Neisser
Show Abstract
BARC technology for 1.35 NA lithography
Author(s): Michael Reilly; Gary Guohong Zhang; Ken Spizuoco
Show Abstract
Optimization of optical properties of silicon-based anti-reflective spin-on hardmask materials
Author(s): Sang Kyun Kim; Hyeon Mo Cho; Changsoo Woo; Sang Ran Koh; Mi-Young Kim; Hui Chan Yoon; Woojin Lee; Seung-Wook Shin; Jong-Seob Kim; Tuwon Chang
Show Abstract
Practical requirement for reflectivity control in sub 30nm device using high NA immersion lithography
Author(s): Yun-kyeong Jang; So-ra Han; Hyoung-hee kim; Jin-Young Yoon; Shi-yong Lee; Kwang-sub Yoon; Seok-hwan Oh; Seong-Woon Choi; Woo-Sung Han
Show Abstract
Acid-degradable hyperbranched polymer and its application in bottom anti-reflective coatings
Author(s): Ramil-Marcelo L. Mercado; Hao Xu; Joyce A. Lowes; Jim D. Meador; Douglas J. Guerrero
Show Abstract
Bottom anti-reflective coating for hyper NA process: theory, application and material development
Author(s): Huirong Yao; JoonYeon Cho; Jian Yin; Salem Mullen; Guanyang Lin; Mark Neisser; Ralph Dammel
Show Abstract
Use of spin-on-hard mask materials for nano scale patterning technology
Author(s): Wen-Hao Wu; Edward Y. Chang; Hwan-Sung Cheon; Sang Kyun Kim; Hyeon Mo Cho; Kyong-Ho Yoon; Jong Seob Kim; Tuwon Chang; Seongho Shin
Show Abstract
A technique for rapid elimination of microbubbles for photochemical filter startup
Author(s): Aiwen Wu; Wailup Chow
Show Abstract
The first on-site evaluation of a new filter optimized for TARC and developer
Author(s): Toru Umeda; Takeo Ishibashi; Atsushi Nakamura; Junichi Ide; Masaru Nagano; Koichi Omura; Shuichi Tsuzuki; Toru Numaguchi
Show Abstract
Application of exposure simulation system to reduce isolated-dense bias by using annular off-axis illumination
Author(s): Yi-Nan Shih; Nien-Po Chen
Show Abstract
Resolution enhancement techniques for contact hole printing of sub-50nm memory device
Author(s): Hye-Jin Shin; Tae-jun You; Min-Ae Yoo; Jin-Young Choi; Kiho Yang; Chan-Ha Park; Dong-gyu Yim
Show Abstract
Process capability comparison between LELE DPT and spacer for NAND flash 32nm and below
Author(s): Shih-en Tseng; Alek C. Chen
Show Abstract
A cost effective spin on sidewall material alternative to the CVD sidewall process
Author(s): Daisuke Maruyama; Bang-Ching Ho; Sangwoong Yoon; Rikimaru Sakamoto; Yasushi Sakaida; Keisuke Hashimoto; Noriaki Fujitani; Hiroaki Yaguchi; Koutastu Matsubara
Show Abstract
22nm 1:1 line and space patterning by using double patterning and resist reflow process
Author(s): Joon Min Park; Ji-Hye Yoo; Joo-Yoo Hong; Ilsin An; Hye-Keun Oh
Show Abstract
193-nm immersion lithography for high volume manufacturing using novel immersion exposure tool and coater/developer system
Author(s): Shinya Wakamizu; Hideharu Kyouda; Katsushi Nakano; Tomoharu Fujiwara
Show Abstract
Defect transfer from immersion exposure process to etching process using novel immersion exposure and track system
Author(s): Osamu Miyahara; Hitoshi Kosugi; Shannon Dunn; Youri van Dommelen; Cedric Grouwstra
Show Abstract
The limit to 4X EUVL
Author(s): Kiwamu Takehisa
Show Abstract
Correction for surface charge induced beam displacement in large area sub-45 nm patterning with FIB lithography
Author(s): Max Chung; Hung-Yi Lin; Jen-Hui Tsai
Show Abstract
CD uniformity improvement of sub 60nm contact hole using model based OPC
Author(s): Hyoung-Soon Yune; Yeong-Bae Ahn; Jung-Chan kim; Hye-Jin Shin; Gyun Yoo; James Moon; Byoung-Sub Nam; Donggyu Yim
Show Abstract
Analysis of adsorption effect of absorbent and threshold limit value (TLV) of Q-time for 193nm ArF reticle haze resistance
Author(s): Fu-Sheng Chu; Shean-Hwan Chiou
Show Abstract
The APC (Advanced Process Control) procedure for process window and CDU improvement using DBMs
Author(s): Jung-Chan Kim; Taehyeong Lee; Areum Jung; Gyun Yoo; Hyunjo Yang; Donggyu Yim; Sungki Park; Jaeyoung Seo; Byoungjun Park; Toshiaki Hasebe; Masahiro Yamamoto
Show Abstract
Application automatic focusing with DVD pickup head in FPD substrate inspection
Author(s): C. M. Tseng; C. Y. Chung; S. C. Chiu; C. W. Yen
Show Abstract
Developing loading effect on lithography I-line process
Author(s): Thomas Huang; Walter Wang; Chun-Yen Huang; Nick Tseng; Ting-Jhen Guo; Chiang-Lin Shih; Wen-Bin Wu
Show Abstract
Novel process proximity correction by the pattern-to-pattern matching method with DBM
Author(s): Dae-Jin Park; Jinyoung Choi; Hyoungsoon Yune; Jaeseung Choi; Cheolkyun Kim; Bong-Ryoul Choi; Donggyu Yim
Show Abstract
Lithography performance and simulation accuracy at different polarization states for sub 40nm node
Author(s): Ki-Yeop Park; Ho-young Kang; Gratiela Isai; Khalid Elbattay; Peter van Oorschot; Stuart Young; Seung-Chul Oh; Young-Hong Min; Sung-Goo Hong; Youn-Tak Park
Show Abstract
Considering mask pellicle effect for more accurate OPC model at 45nm technology node
Author(s): Ching-Heng Wang; Qingwei Liu; Liguo Zhang
Show Abstract
Acid diffusion length dependency for 32-nm node attenuated and chromeless phase shift mask
Author(s): Jee-Hye You; Young-Min Kang; Minhee Jung; Hye-Keun Oh
Show Abstract
Cycloolefin effect in cycloolefin-(meth)acryl copolymer
Author(s): Hyun Soon Lim; Dong Chul Seo; Chang Soo Lee; Sang Wok Park; Sang Jin Kim; Dae Hyeon Shin; Jin Bong Shin; Joo Hyun Park
Show Abstract
Spacer double patterning technique for sub-40nm DRAM manufacturing process development
Author(s): Weicheng Shiu; William Ma; Hong Wen Lee; Jan Shiun Wu; Yi Min Tseng; Kevin Tsai; Chun Te Liao; Aaron Wang; Alan Yau; Yi Ren Lin; Yu Lung Chen; Troy Wang; Wen Bin Wu; Chiang Lin Shih
Show Abstract
Development of multi-layer process materials for hyper-NA lithography process
Author(s): Yasushi Sakaida; Makoto Nakajima; Tetsuya Shinjo; Keisuke Hashimoto
Show Abstract
CD control enhancement by laser bandwidth stabilization for advanced lithography application
Author(s): R. C. Peng; Tony Wu; K. W. Chang; C. P. Yeh; H. H. Liu; H. J. Lee; John Lin; Allen Chang; Benjamin Szu-Min Lin
Show Abstract
Analysis of the effect of laser bandwidth on imaging of memory patterns
Author(s): Nakgeuon Seong; Insung Kim; Dongwoo Kang; Sang-Ho Lee; Jinphil Choi
Show Abstract
Throughput improvement from routing reduction by using CPE (correction per exposure)
Author(s): Ray C. Chang; Jui-Chin Yang; Chia-Hung Chen; Chi-Chun Lin; Cathy Wang; Wythe Lin; Chia-Chi Chen
Show Abstract

© SPIE. Terms of Use
Back to Top