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Proceedings of SPIE Volume 7122

Photomask Technology 2008
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Volume Details

Volume Number: 7122
Date Published: 17 October 2008
Softcover: 134 papers (1382) pages
ISBN: 9780819473554

Table of Contents
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Front Matter: Volume 7122
Author(s): Proceedings of SPIE
Mask industry assessment: 2008
Author(s): Greg Hughes; Henry Yun
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PMJ panel discussion overview on mask complexities, cost, and cycle time in 32-nm system LSI generation: conflict or concurrent?
Author(s): Kunihiro Hosono; Kokoro Kato
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Characterization of binary and attenuated phase shift mask blanks for 32nm mask fabrication
Author(s): Thomas Faure; Emily Gallagher; Michael Hibbs; Louis Kindt; Ken Racette; Richard Wistrom; Amy Zweber; Alfred Wagner; Yasutaka Kikuchi; Toru Komizo; Satoru Nemoto
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Impact of the OMOG substrate on 32 nm mask OPC inspectability, defect sensitivity, and mask design rule restrictions
Author(s): Karen Badger; Yutaka Kodera; Emily Gallagher; Mark Lawliss
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Evaluation of 32nm advanced immersion lithography pellicles
Author(s): N. Zhou; K. Racette; M. Hibbs; T. Mizoguchi; D. Hasselbeck; M. Barrett; R. Nolan; F. Houle; J. Ritter; A. Wagner; M. Caterer
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Road to a zero degree total temperature range post exposure bake process
Author(s): Tobias Wähler; Peter Dress
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Study of second-generation Proximity Gap Suction Development System (PGSD-II) for mask fabrication
Author(s): Hideaki Sakurai; Masatoshi Terayama; Mari Sakai; Masamitsu Itoh; Osamu Ikenaga; Hideo Funakoshi; Norifumi Sato; Kenji Nakamizo; Masato Nomura; Yoshihiko Saito; Junji Nakao; Naoya Hayashi
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Process control of chrome dry etching by complete characterization of the RF power delivery
Author(s): Björn Sass; Ralf Schubert; Thomas Jakubski; Sebastian Mauermann; Pavel Nesladek; Andreas Wiswesser; Karl-Heinz Gindra; Ray Malone
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Integrating Cr and MoSi etch for optimal photomask critical dimension uniformity and phase uniformity
Author(s): Richard Wistrom; Toru Komizo; Satoru Nemoto; A. Gary Reid
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Electric field-induced progressive CD degradation in reticles
Author(s): Gavin C. Rider
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Don't kill canaries! Introducing a new test device to assess the electrostatic risk potential to photomasks
Author(s): Thomas Sebald
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Damage mechanisms and process optimization for photomasks with sub-resolution assist features
Author(s): L. Kindt; E. Gallagher; J. Levin; Y. Kodera; Y. Okawa; Y. Sasaki
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New electron optics for mask writer EBM-7000 to challenge hp 32nm generation
Author(s): Takashi Kamikubo; Steven Golladay; Rodney Kendall; Victor Katsap; Kenji Ohtoshi; Munehiro Ogasawara; Shinsuke Nishimura; Rieko Nishimura; Osamu Iizuka; Takahito Nakayama; Shunji Shinkawa; Tetsurou Nishiyama; Shuichi Tamamushi
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E-beam exposure system using multi column cell (MCC) with CP for mask writing
Author(s): Akio Yamada; Hiroshi Yasuda; Masaki Yamabe
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Results obtained with the CHARPAN Engineering Tool and prospects of the ion Mask Exposure Tool (iMET)
Author(s): Elmar Platzgummer; Hans Loeschner; Gerhard Gross
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Effects of heated substrates on bimetallic thermal resist for lithography and grayscale photomask applications
Author(s): James M. Dykes; Polly Tsui; Jenny Leung; Glenn H. Chapman
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Revisiting the layout decomposition problem for double patterning lithography
Author(s): Andrew B. Kahng; Chul-Hong Park; Xu Xu; Hailong Yao
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Evaluation of Double Process Lithography (DPL) with bi-layer photo-resist process for contact layer-patterning
Author(s): Gong Chen; Kevin Wu
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Mask defect printability in the spacer patterning process
Author(s): Seiro Miyoshi; Shinji Yamaguchi; Takashi Hirano; Hiromitsu Mashita; Hidefumi Mukai; Ayumi Kobiki; Yuuji Kobayashi; Kohji Hashimoto; Soichi Inoue
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Printability verification for double-patterning technology
Author(s): Gerard Luk-Pat; Petrisor Panaite; Kevin Lucas; Christopher Cork; Vincent Wiaux; Staf Verhaegen; Mireille Maenhoudt
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Double dipole RET investigation for 32 nm metal layers
Author(s): Carl Babcock; Yi Zou; Derren Dunn; Zachary Baum; Zengqin Zhao; Itty Matthew; Pat LaCour
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Double-patterning decomposition, design compliance, and verification algorithms at 32nm hp
Author(s): Alexander Tritchkov; Petr Glotov; Sergiy Komirenko; Emile Sahouria; Andres Torres; Ahmed Seoud; Vincent Wiaux
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Pixel-based SRAF implementation for 32nm lithography process
Author(s): Byung-Sung Kim; Yoo-Hyun Kim; Sung-Ho Lee; Sung-Il Kim; Sang-Rok Ha; Juhwan Kim; Alexander Tritchkov
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Model-based assist feature placement: an inverse imaging approach
Author(s): Amyn Poonawala; Benjamin Painter; Jeffrey Mayhew
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Optimizing models based OPC fragmentation using genetic algorithms
Author(s): Domenico A. Dipaola; Ian Stobert
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Single exposure is still alive: gate patterning at 45nm technology node
Author(s): Klaus Herold; Donald J. Samuels; Derren Dunn; Amr Abdo; Chandrasekhar Sarma
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Advanced mask technique to improve bit line CD uniformity of 90 nm node flash memory in low-k1 lithography
Author(s): Jong-doo Kim; Jae-young Choi; Jea-hee Kim; Jae-won Han
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32nm design rule and process exploration flow
Author(s): Yunqiang Zhang; Jonathan Cobb; Amy Yang; Ji Li; Kevin Lucas; Satyendra Sethi
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Challenges for the quality control of assist features for 45nm node technology and beyond
Author(s): Lin Wang; Todd Lukanc; Makoto Takahashi; Hung-Eil Kim; Khoi Phan; Taichi Yamazaki; Yosuke Kojima; Wataru Nozaki; Takashi Haraguchi; Yoshimitsu Okuda
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Impact of MegaSonic process conditions on PRE and sub-resolution assist feature damage
Author(s): Stefan Helbig; Sabine Urban; Elizabeth Klein; Sherjang Singh
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Tunable droplet momentum and cavitation process for damage-free cleaning of challenging particles
Author(s): Roman Gouk; James Papanu; Fred Li; Jason Jeon; Tong Liu; Rao Yalamanchili
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Phase shift improvement in ArF/KrF haze-free mask cleaning
Author(s): Cathy Liu; Shirley Zhao; Eric Guo; Shinichi Hasegawa; Keiichi Nemoto; Tsuneaki Kuwajima
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Crystal growth printability in an advanced foundry FAB: a correlation study between STARlight and ultra broadband BrightField inspection technologies
Author(s): Teng Hwee Ng; Mohammed Fahmy bin Rahmat; Barry Saville; Patrick Pak; WeeTeck Chia; Aaron Chin; Mike VanRiet; Russell Dover; Raj Badoni
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Report of latent contamination factors inducing lithographic variation
Author(s): Jin Ho Ryu; Kang Joon Seo; Ji Sun Ryu; Chang Yeol Kim
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Detection of progressive transmission loss due to haze with Galileo mask DUV transmittance mapping based on non imaging optics
Author(s): Steven Labovitz; Guy Ben-Zvi; Vladimir Dmitriev; Erez Graitzer; Eitan Zait
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A new paradigm for haze improvement: retardation of haze occurrence by creating mask substrate insensitive to chemical contamination level
Author(s): Han-Shin Lee; Jaehyuck Choi; Jin-Sik Jung; Jong-Keun Oh; Soo-Jung Kang; Hae-Young Jeong; Sang-Gyun Woo; HanKu Cho
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Simulation analysis of backside defects printability in 193nm photolithography
Author(s): Jisun Ryu; Dongwook Lee; Jinho Ryu; Sookyeong Jeong; SangPyo Kim; Changyeol Kim
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Optimal mask characterization by Surrogate Wafer Print (SWaP) method
Author(s): Kurt R. Kimmel; Ingo Hoellein; Jan Hendrick Peters; Paul Ackmann; Brid Connolly; Craig West
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High resolution inspection with wafer plane die: database defect detection
Author(s): Carl Hess; Mark Wihl; Rui-fang Shi; Yalin Xiong; Song Pang
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Wafer plane inspection evaluated for photomask production
Author(s): Emily Gallagher; Karen Badger; Mark Lawliss; Yutaka Kodera; Jaione Tirapu Azpiroz; Song Pang; Hongqin Zhang; Eugenia Eugenieva; Chris Clifford; Arosha Goonesekera; Yibin Tian
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Wafer plane inspection with soft resist thresholding
Author(s): Carl Hess; Rui-fang Shi; Mark Wihl; Yalin Xiong; Song Pang
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AIMS and resist simulation
Author(s): Ulrich Strößner; Holger Seitz; Robert Birkner; Rigo Richter; Thomas Scherübl
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AIMS-45 image validation of contact hole patterns after inverse lithography at NA 1.35
Author(s): E. Hendrickx; R. Birkner; M. Kempsell; A. Tritchkov; G. Vandenberghe; T. Scheruebl
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A novel approach to mask defect inspection
Author(s): Amir Sagiv; Yuri Shirman; Shmoolik Mangan
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Novel mask inspection flow using Sensitivity Control Layers (SCL) on the TeraScanHR-587 platform
Author(s): Shad Hedges; Chin Le; Mark Eickhoff; Mark Wylie; Tim Simmons; Venu Vellanki; Jeff McMurran
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Evaluating practical vs. theoretical inspection system capability with a new programmed defect test mask designed for 3X and 4X technology nodes
Author(s): Joshua Glasser; Tim Pratt
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Nanomachining photomask repair of complex patterns
Author(s): Tod Robinson; Andrew Dinsdale; Mike Archuletta; Ron Bozak; Roy White
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Practical laser mask repair in the contemporary production environment
Author(s): Tod Robinson; Roy White; Mike Archuletta; Ron Bozak
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Advanced process capabilities for electron beam based photomask repair in a production environment
Author(s): Anthony Garetto; Christof Baur; Jens Oster; Markus Waiblinger; Klaus Edinger
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32nm 1-D regular pitch SRAM bitcell design for interference-assisted lithography
Author(s): Robert T. Greenway; Kwangok Jeong; Andrew B. Kahng; Chul-Hong Park; John S. Petersen
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Convergence-based OPC method for dense simulations
Author(s): Tamer Desouky
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Combination of rule and pattern based lithography unfriendly pattern detection in OPC flow
Author(s): Jae-Hyun Kang; Jae-Young Choi; Yeon-Ah Shim; Hye-Sung Lee; Bo Su; Walter Chan; Ping Zhang; Joanne Wu; Keun-Young Kim
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Automated OPC model collection, cleaning, and calibration flow
Author(s): Martin Drapeau; Brian S. Ward; Brad Falch
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Improvements in accuracy of dense OPC models
Author(s): Chidam Kallingal; James Oberschmidt; Ramya Viswanathan; Amr Abdo; OSeo Park
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Defining a physically accurate laser bandwidth input for optical proximity correction (OPC) and modeling
Author(s): Ivan Lalovic; Oleg Kritsun; Sarah McGowan; Joseph Bendik; Mark Smith; Nigel Farrar
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Benchmark of rigorous methods for electromagnetic field simulations
Author(s): Sven Burger; Lin Zschiedrich; Frank Schmidt; Peter Evanschitzky; Andreas Erdmann
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Fast and accurate hybrid subgrid and subcell finite-difference time-domain methods for the simulation of mask electromagnetic effects in sub-45nm lithography
Author(s): Michael S. Yeung
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Extracting mask error function from intensity slices
Author(s): David Ziger
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Scanner-specific separable models for computational lithography
Author(s): Stefan Hunsche; Xu Xie; Qian Zhao; Hua-Yu Liu; Peter Nikolsky; Anthony Ngai
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Considering MEEF in inverse lithography technology (ILT) and source mask optimization (SMO)
Author(s): Linyong Pang; Guangming Xiao; Vikram Tolani; Peter Hu; Thomas Cecil; Thuc Dam; Ki-Ho Baik; Bob Gleason
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Smoothing based model for images of buried EUV multilayer defects near absorber features
Author(s): Chris H. Clifford; Andrew R. Neureuther
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Simulation-based EUV source and mask optimization
Author(s): Tim Fühner; Andreas Erdmann; Peter Evanschitzky
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DFM viewpoints of cell-level layout assessments and indications for concurrent layout optimization
Author(s): Chung-Min Fu; Ping-Heng Yeh; Yi-Kan Cheng; Simon Klaver
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Concurrent optimization of MDP, mask writing, and mask inspection for mask manufacturing cost reduction
Author(s): Masaki Yamabe; Tadao Inoue; Masahiro Shoji; Hiroshi Yasuda; Hiromichi Hoshi; Masakazu Tokita
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Design for manufacturability guideline development: integrated foundry approach
Author(s): Hyesung Lee; Yeon-Ah Shim; Jae-Young Choi; Kwang-Seon Choi; Joanne Wu; Bo Su; Xinwei Zhou; Kenny Kim
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Flexible sensitivity inspection with TK-CMI software for criticality-awareness
Author(s): Frank A. J. M. Driessen; Jamila Gunawerdana; Yakuko Saito; Hideo Tsuchiya; Yoshitake Tsuji
Show Abstract
Improving contact and via process latitude through selective upsizing
Author(s): C. Yuan; G. Abeln; B. Anthony; G. Chen; S. Robertson; P. Walker
Show Abstract
Assist feature aware double patterning decomposition
Author(s): Christopher Cork; Levi Barnes; Gerard Luk-Pat
Show Abstract
Development status of EUVL mask blanks
Author(s): Kazuaki Shiromo
Show Abstract
Chemical durability studies of Ru-capped EUV mask blanks
Author(s): Takeya Shimomura; Ted Liang
Show Abstract
EUVL practical mask structure with light shield area for 32nm half pitch and beyond
Author(s): Takashi Kamo; Hajime Aoyama; Toshihiko Tanaka; Osamu Suga; Tsukasa Abe; Tadahiko Takikawa; Naoya Hayashi; Tsutomu Shoki; Youichi Usui; Morio Hosoya
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Control of the sidewall angle of an absorber stack using the Faraday cage system for the change of pattern printability in EUVL
Author(s): Il-Yong Jang; Sung-Min Huh; Seong-Yong Moon; Sang-Gyun Woo; Jin-Kwan Lee; Sang Heup Moon; HanKu Cho
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Pattern placement correction due to bending in EUVL masks
Author(s): Seh-Jin Park; Chandhok Manish; Marilyn Kamna; Chuan Hu; Guojing Zhang; Fabian C. Martinez; Nathan Wilcox; Kamgmin Hsia; Alan R. Stivers
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Signal analysis for the actinic full-field EUVL mask blank inspection system
Author(s): Takeshi Yamane; Teruo Iwasaki; Toshihiko Tanaka; Tsuneo Terasawa; Osamu Suga; Toshihisa Tomie
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Benchmarking EUV mask inspection beyond 0.25 NA
Author(s): Kenneth A. Goldberg; Iacopo Mochi; Patrick P. Naulleau; Hakseung Han; Sungmin Huh
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The study of EUVL mask defect inspection technology for 32-nm half-pitch node device and beyond
Author(s): Hiroyuki Shigemura; Tsuyoshi Amano; Yasushi Nishiyama; Osamu Suga; Tsuneo Terasawa; Yukiyasu Arisawa; Hideaki Hashimoto; Norio Kameya; Masaya Takeda; Nobutaka Kikuiri; Ryoichi Hirano; Masatoshi Hirono
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An investigation of EUV lithography defectivity
Author(s): Kevin D. Cummings; Thomas Laursen; Bill Pierson; Sang-in Han; Robert Watso; Youri van Dommelen; Brian Lee; Yunfei Deng; Bruno La Fontaine; Thomas Wallow; Uzo Okoroanyanwu; Obert Wood; Anna Tchikoulaeva; Christian Holfeld; Jan Hendrick Peters; Chiew-seng Koay; Karen Petrillo; Tony DiBiase; Sumanth Kini; Hiroyuki Mizuno
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Study of EUVL mask defect repair using FIB-GAE method
Author(s): Tsuyoshi Amano; Yasushi Nishiyama; Hiroyuki Shigemura; Tsuneo Terasawa; Osamu Suga; Kensuke Shiina; Fumio Aramaki; Ryoji Hagiwara; Anto Yasaka
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Analysis of process margin in EUV mask repair with nano-machining
Author(s): Su-Young Lee; Geun-Bae Kim; Hong-Seok Sim; Sang-Hyeon Lee; Hwa-Sung Kim; Jung-Hwan Lee; Hwan-Seok Seo; Hak-Seung Han; Seong-Sue Kim; Seong-Yong Moon; Sang-Gyun Woo; Ron Bozak; Andrew Dinsdale; Tod Robinson; David Lee; HanKu Cho
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Ga implantation and interlayer mixing during FIB repair of EUV mask defects
Author(s): Yasushi Nishiyama; Tsuyoshi Amano; Hiroyuki Shigemura; Tsuneo Terasawa; Osamu Suga; Tomokazu Kozakai; Fumio Aramaki; Kensuke Shiina; Anto Yasaka; Ryoji Hagiwara
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Defect inspection of imprinted 32 nm half pitch patterns
Author(s): Kosta Selinidis; Ecron Thompson; Ian McMackin; Joseph Perez; S. V. Sreenivasan; Douglas J. Resnick
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Evaluation of e-beam repair for nanoimprint templates
Author(s): Marcus Pritschow; Volker Boegli; Joerg Butschke; Mathias Irmscher; Douglas Resnick; Holger Sailer; Kosta Selinidis; Ecron Thompson
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Diamonds in the rough: key performance indicators for reticles and design sets
Author(s): Paul Ackmann
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Accelerated data communication of semiconductor design files
Author(s): Gregory H. Fairbank
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Compute resource management and turn around time control in mask data prep
Author(s): Travis Lewis; Scott Goad; Kenneth Jantzen; Ahmed Nouh; Minyoung Park; Emile Sahouria; Steffen Schulze
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International photomask linewidth comparison by NIST and PTB
Author(s): J. Potzick; R. Dixson; R. Quintanilha; M. Stocker; A. Vladar; E. Buhr; W. Häßler-Grohne; B. Bodermann; C. G. Frase; H. Bosse
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Re-calibration of the NIST SRM 2059 master standard using traceable atomic force microscope metrology
Author(s): Ronald Dixson; James Potzick; Ndubuisi G. Orji
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A study of the limited area scanning system in the mask CD-SEM
Author(s): Toshi Iwai; Soichi Shida; Mitsuo Hiroyama; Takayuki Nakamura; Hisaya Sakaguchi; Hiroki Ueno; Masaru Higuchi; Tatsuya Aihara
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Exploring new metrology for complex photomask patterns
Author(s): Masaru Higuchi; Tatsuya Aihara; Hideaki Saito; Isao Yonekura; Jotaro Suzuki; Emily Gallagher; Ian P. Stobert
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New method of 2-dimensional metrology using mask contouring
Author(s): Ryoichi Matsuoka; Yoshikazu Yamagata; Akiyuki Sugiyama; Yasutaka Toyoda
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Comparative scatterometric CD measurements on a MoSi photo mask using different metrology tools
Author(s): Jan Richter; Jens Rudolf; Bernd Bodermann; John C. Lam
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Mask process monitoring with optical CD measurements for sub-50-nm
Author(s): Kyung-Yoon Bang; Jin-Back Park; Jeong-Hun Roh; Dong-Hoon Chung; Sung-Yong Cho; Yong-Hoon Kim; Sang-Gyun Woo; Han-Ku Cho
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Novel CD measurement and precise pattern size extraction method for optical images
Author(s): Lev Faivishevsky
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Improvement in metrology on new 3D-AFM platform
Author(s): Ingo Schmitz; Marc Osborn; Sean Hand; Qi Chen
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Development of a 1.5D reference comparator for position and straightness metrology on photomasks
Author(s): J. Flügge; R. Köning; Ch. Weichert; W. Häßler-Grohne; R. D. Geckeler; A. Wiegmann; M. Schulz; C. Elster; H. Bosse
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Photomask registration and overlay metrology by means of 193 nm optics
Author(s): Gerd Klose; Norbert Kerwien; Michael Arnz; Dirk Beyer; Norbert Rosenkranz
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World wide matching of registration metrology tools of various generations
Author(s): F. Laske; A. Pudnos; L. Mackey; P. Tran; M. Higuchi; C. Enkrich; K.-D. Roeth; K.-H. Schmidt; D. Adam; J. Bender
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Spectroscopic ellipsometry applications in photomask technology
Author(s): Ron A. Synowicki; James N. Hilfiker
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True reticle cost saving by multi level reticle approach
Author(s): Thomas Struck; Hendrik Kirbach
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Technology interactions on reticle delivery
Author(s): Paul Ackmann; Scott Goad; Craig West
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Deflection unit for multi-beam mask making
Author(s): Florian Letzkus; Joerg Butschke; Mathias Irmscher; Michael Jurisch; Wolfram Klingler; Elmar Platzgummer; Christof Klein; Hans Loeschner; Reinhard Springer
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Mask patterning for the 22nm node using a proton multi-beam projection pattern generator
Author(s): Joerg Butschke; Mathias Irmscher; Holger Sailer; Lorenz Nedelmann; Marcus Pritschow; Hans Loeschner; Elmar Platzgummer
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High accuracy jog CD control on OPC pattern by advanced laser writer Sigma7500
Author(s): Tomas Chin; Wen-Bin Wu; Chiang-Lin Shih
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70nm DRAM intra-field CDU improvement by dose modulation on mask transmittance
Author(s): Tomas Chin; Wen Bin Wu; Chiang Lin Shih; Pei Cheng Fan; Guy Ben Zvi
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The study of CD behavior due to transmission control position change within photomask substrate
Author(s): Munsik Kim; Hyemi Lee; Sungha Woo; Kangjoon Seo; Yongkyoo Choi; Changyeol Kim
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Effects of photo resist erosion in development on critical dimension performance for 45nm node and below
Author(s): Guen-Ho Hwang; Dong-Hyun Kim; Chu-bong Yu; Byeng-Sun Kang; Ik-Boum Hur; Cheol Shin; Sung-Mo Jung; Sang-Soo Choi
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Auto-classification and simulation of mask defects using SEM and CAD images
Author(s): Tung-Yaw Kang; Hsin-Chang Lee; H. Zhang; K. Yamada; Y. Kitayama; K. Kobayashi; Peter Fiekowsky
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Automated reticle inspection data analysis for wafer fabs
Author(s): Derek Summers; Gong Chen; Bryan Reese; Trent Hutchinson; Marcus Liesching; Hai Ying; Russell Dover
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Results from the KLA-Tencor TeraScanXR reticle inspection tool
Author(s): Aditya Dayal; Bo Mu; Venkat Iyer; Phillip Lim; Arosha Goonesekera; Bill Broadbent
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Layout driven DNIR
Author(s): Kiyoshi Kageyama; Kohei Yanagisawa; Atsushi Kobayashi; Shinji Kunitani; Yoji Tonooka
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Improving cost of ownership on KLA-Tencor wafer fab reticle inspections by implementing pixel migration via new STARlight2+ capability
Author(s): Yung-Feng Cheng; Wei-Cyuan Lo; Ming-Jui Chen; Peter Huang; Chunlin Chen; Swapnajit Chakravarty; Paul Yu; Russell Dover
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An effective haze monitoring method
Author(s): Shih-Ping Lu; Shean-Hwan Chiou; Wen-Jui Tseng
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Results of new mask contamination inspection capability STARlight2+ 72nm pixel with cell-to-cell HiRes5 for qualifying memory masks in wafer fabs
Author(s): Raj Badoni; Jinggang Zhu; Russell Dover; Norbert Schmidt; Michael Lang; Andreas Jahnke; Florian Uhlig
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SL2+: H5 use case
Author(s): Kosuke Ito; Steven Liu; Isaac Lee; Russell Dover; Paul Yu
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Evaluation of backside particle contamination and electrostatic chuck design on the cleanliness of EUV reticle mask blanks in a multilayer Mo/Si ion beam deposition system
Author(s): A. V. Hayes; R. Randive; I. Reiss; J. Menendez; P. Kearney; T. Sugiyama
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UV NIL template making and imprint evaluation
Author(s): Shiho Sasaki; Takaaki Hiraka; Jun Mizuochi; Akiko Fujii; Yuko Sakai; Takanori Sutou; Satoshi Yusa; Koki Kuriyama; Masashi Sakaki; Yasutaka Morikawa; Hiroshi Mohri; Naoya Hayashi
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Development status of back-end process for UV-NIL template fabrication
Author(s): Yuichi Inazuki; Kimio Itoh; Sho Hatakeyama; Kouichirou Kojima; Masaaki Kurihara; Yasutaka Morikawa; Hiroshi Mohri; Naoya Hayashi
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Non-uniform yield optimization for integrated circuit layout considering global interactions
Author(s): J. Andres Torres; Fedor G. Pikus
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Fast and simple modeling of non-rectangular transistors
Author(s): Jen-Yi Wuu; Fedor G. Pikus; Malgorzata Marek-Sadowska
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Study of influence to transistor properties on the change of OPC pattern
Author(s): Kazuya Sugawa; Norimasa Nagase; Takahisa Itoh; Mitsuo Sakurai; Tomoyuki Okada
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Mask data prioritization based on design intent
Author(s): Kokoro Kato; Masakazu Endo; Tadao Inoue; Masaki Yamabe
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An efficient method for transfer cross coefficient approximation in model based optical proximity correction
Author(s): Romuald Sabatier; Caroline Fossati; Salah Bourennane; Antonio Di Giacomo
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Focus blur model to enhance lithography model for optical proximity correction
Author(s): Qiaolin Zhang; Hua Song; Kevin Lucas
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Accelerate OPC convergence with new iteration control methodology
Author(s): Ching-Heng Wang; Qingwei Liu; Liguo Zhang
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Enhanced DCT2-based inverse mask synthesis with initial SRAF insertion
Author(s): Shanhu Shen; Peng Yu; David Z. Pan
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Empirical study of OPC metrology requirements for 32-nm node logic
Author(s): Brian S. Ward; Lena Zavylova; Peter de Bisschop; Jeroen van de Kerkhove
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Adaptive automatic fragmentation
Author(s): Mohamed Serag El-Din Habib
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Enhancing OPC model stability and predictability using SEM image contours
Author(s): Mohamed Serag El-Din Habib
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Characterizing OPC model accuracy versus lens induced polarization effects in hyper NA immersion lithography
Author(s): Tamer M. Tawfik; Edita Tejnil
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OPC hotspot identification challenges: ORC vs. PWQ on wafer
Author(s): Andre Poock; Sarah McGowan; Francois Weisbuch; Guido Schnasse; Rajesh Ghaskadvi
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Toward faster OPC convergence: advanced analysis for OPC iterations and simulation environment
Author(s): Mohamed Bahnas; Mohamed Al-Imam; Tamer Tawfik
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OPC cycle time reduction and accuracy improvement by early access to advanced Tachyon modeling of TWINSCAN XT:1900i scanner
Author(s): Peter Nikolsky; Tjitte Nooitgedagt; Paul van Adrichem; Jeroen Meessen; Carsten Kohler; Baukje Wisse; Stefan Hunsche
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Sizing algorithm with continuous customizable clipping
Author(s): Domingo Morales; Felipe Baytelman; Hugo Araya
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Lithography and design in partnership: a new roadmap
Author(s): Andrew B. Kahng
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