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PROCEEDINGS VOLUME 7028

Photomask and Next-Generation Lithography Mask Technology XV
Editor(s): Toshiyuki Horiuchi
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Volume Details

Volume Number: 7028
Date Published: 9 June 2008
Softcover: 116 papers (1122) pages
ISBN: 9780819472434

Table of Contents
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Front Matter: Volume 7028
Author(s): Proceedings of SPIE
Logic device scaling trend in ITRS 2007
Author(s): Kiyotaka Imai
Show Abstract
MoSi absorber photomask for 32nm node
Author(s): Toshio Konishi; Yosuke Kojima; Hiroyuki Takahashi; Masato Tanabe; Takashi Haraguchi; Matthew Lamantia; Yuichi Fukushima; Yoshimitsu Okuda
Show Abstract
The ultimate chrome absorber in photomask making
Author(s): Masahiro Hashimoto; Hiroyuki Iwashita; Atsushi Kominato; Hiroaki Shishido; Masao Ushida; Hideaki Mitsui
Show Abstract
Photomask technology for 32nm node and beyond
Author(s): Ryugo Hikichi; Hiroyuki Ishii; Hidekazu Migita; Noriko Kakehi; Mochihiro Shimizu; Hideyoshi Takamizawa; Tsugumi Nagano; Masahiro Hashimoto; Hiroyuki Iwashita; Toshiyuki Suzuki; Morio Hosoya; Yasushi Ohkubo; Masao Ushida; Hideaki Mitsui
Show Abstract
Phase shift mask etch process development utilizing a scatterometry-based metrology tool
Author(s): Jason Plumhoff; Alexander Gray
Show Abstract
Advanced damage-free photomask cleaning for 45/32nm technology nodes
Author(s): Roman Gouk; Jason Jeon; Fred Li; James Papanu; Banqiu Wu; Rao Yalamanchili
Show Abstract
Application of two-fluid nozzles for advanced photomask cleaning process
Author(s): Kenji Masui; Tetsuo Takemoto; Kyo Otsubo; Mari Sakai; Tomotaka Higaki; Hidehiro Watanabe; Tsutomu Kikuchi; Yoshiaki Kurokawa
Show Abstract
Linewidth roughness characterization in step and flash imprint lithography
Author(s): Gerard M. Schmid; Niyaz Khusnatdinov; Cynthia B. Brooks; Dwayne LaBrake; Ecron Thompson; Douglas J. Resnick
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Multi column cell (MCC) e-beam exposure system for mask writing
Author(s): Hiroshi Yasuda; Akio Yamada; Masaki Yamabe
Show Abstract
Modeling of charging effect and its correction by EB mask writer EBM-6000
Author(s): Noriaki Nakayamada; Seiji Wake; Takashi Kamikubo; Hitoshi Sunaoshi; Shuichi Tamamushi
Show Abstract
Mask image position correction for double patterning lithography
Author(s): Masato Saito; Masamitsu Itoh; Osamu Ikenaga; Kazutaka Ishigo
Show Abstract
Distributed processing (DP) based e-beam lithography simulation with long range correction algorithm in e-beam machine
Author(s): Won-Tai Ki; Ji-Hyeon Choi; Byung-Gook Kim; Sang-Gyun Woo; Han-Ku Cho
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Case study: the impact of VSB fracturing
Author(s): Brian Dillon; Tim Norris
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Model based short range mask process correction
Author(s): G. Chen; J.-S. Wang; S. Bai; R. Howell; J. Wiley; A. Vacca; T. Kurosawa; T. Nishibe; T. Takigawa
Show Abstract
Selete EUV reticle shipping and storage test results
Author(s): Kazuya Ota; Mitsuaki Amemiya; Takao Taguchi; Osamu Suga
Show Abstract
Damage analysis of EUV mask under Ga focused ion beam irradiation
Author(s): Yasushi Nishiyama; Tsuyoshi Amano; Hiroyuki Shigemura; Tsuneo Terasawa; Osamu Suga; Tomokazu Kozakai; Syuichi Kikuchi; Kensuke Shiina; Anto Yasaka; Ryoji Hagiwara
Show Abstract
Hybrid resist model to enhance continuous process window model for OPC
Author(s): Qiaolin Zhang; Kevin Lucas
Show Abstract
Predictive modeling of lithography-induced linewidth variation
Author(s): Andrew B. Kahng; Swamy V. Muddu
Show Abstract
OPC model enhancement using parameter sensitivity methodology
Author(s): Brian S. Ward; Martin Drapeau
Show Abstract
Yield-centric layout optimization with precise quantification of lithographic yield loss
Author(s): Sachiko Kobayashi; Suigen Kyoh; Koichi Kinoshita; Yukihiro Urakawa; Eiji Morifuji; Satoshi Kuramoto; Soichi Inoue
Show Abstract
Metrology of EUV masks by EUV-scatterometry and finite element analysis
Author(s): Jan Pomplun; Sven Burger; Frank Schmidt; Frank Scholze; Christian Laubis; Uwe Dersch
Show Abstract
32 nm imprint masks using variable shape beam pattern generators
Author(s): Kosta Selinidis; Ecron Thompson; Gerard Schmid; Nick Stacey; Joseph Perez; John Maltabes; Douglas J. Resnick; Jeongho Yeo; Hoyeon Kim; Ben Eynon
Show Abstract
Describing litho-constrained layout by a high-resolution model filter
Author(s): Min-Chun Tsai
Show Abstract
Source optimization and mask design to minimize MEEF in low k1 lithography
Author(s): Guangming Xiao; Tom Cecil; Lingyong Pang; Bob Gleason; John McCarty
Show Abstract
Model-based mask verification on critical 45nm logic masks
Author(s): F. Sundermann; F. Foussadier; T. Takigawa; J. Wiley; A. Vacca; L. Depre; G. Chen; S. Bai; J.-S. Wang; R. Howell; V. Arnoux; K. Hayano; S. Narukawa; S. Kawashima; H. Mohri; N. Hayashi; H. Miyashita; Y. Trouiller; F. Robert; F. Vautrin; G. Kerrien; J. Planchot; C. Martinelli; J. L. Di-Maria; V. Farys; B. Vandewalle; L. Perraud; J. C. Le Denmat; A. Villaret; C. Gardin; E. Yesilada; M. Saied
Show Abstract
Optimization of MDP, mask writing, and mask inspection for mask manufacturing cost reduction
Author(s): Masaki Yamabe
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Scanner fleet management utilizing programmed hotspot patterns
Author(s): Kenji Yoshida; Soichi Inoue; Koji Hashimoto; Satoshi Tanaka; Masaki Satake; Takashi Obara; Kazuhiro Takahata; Eiji Yamanaka; Mitsuyo Kariya; Hiroyuki Morinaga; Shoji Mimotogi
Show Abstract
Separable OPC models for computational lithography
Author(s): Hua-Yu Liu; Qian Zhao; J. Fung Chen; Jiong Jiang; Robert Socha; Eelco Van Setten; Andre Engelen; Jeroen Meessen; Michael M. Crouse; Mu Feng; Wenjin Shao; Hua Cao; Yu Cao; Lieve Van Look; Joost Bekaert; Geert Vandenberghe; Jo Finders
Show Abstract
AF fixer: new incremental OPC method for optimizing assist feature
Author(s): Sung-Gon Jung; Sang-Wook Kim; Sung-Soo Suh; Young-Chang Kim; Suk-Joo Lee; Sung-Woon Choi; Woo-Sung Han; Joo-Tae Moon; Levi D. Barnes; Xiaohai Li; Robert M. Lugg; Sooryong Lee; Kyoil Koo; Munhoe Do; Frank P. Amoroso; Benjamin Painter
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Extension of the 2D-TCC technique to optimize mask pattern layouts
Author(s): Manabu Hakko; Kenji Yamazoe; Miyoko Kawashima; Yoshiyuki Sekine; Masakatsu Ohta; Tokuyuki Honda
Show Abstract
The lithography technology for the 32 nm HP and beyond
Author(s): Mircea Dusa; Bill Arnold; Jo Finders; Hans Meiling; Koen van Ingen Schenau; Alek C. Chen
Show Abstract
Model-based SRAF insertion through pixel-based mask optimization at 32nm and beyond
Author(s): Kyohei Sakajiri; Alexander Tritchkov; Yuri Granik
Show Abstract
Rigorous vectorial modeling for polarized illumination and projection pupil in OPC
Author(s): Qiaolin Zhang; Hua Song; Kevin Lucas; Brian Ward; James Shiely
Show Abstract
Impact of patterning strategy on mask fabrication beyond 32nm
Author(s): Shoji Mimotogi; Tomotaka Higaki; Hideki Kanai; Satoshi Tanaka; Masaki Satake; Yosuke Kitamura; Katsuyoshi Kodera; Kazutaka Ishigo; Takuya Kono; Masafumi Asano; Kazuhiro Takahata; Soichi Inoue
Show Abstract
Mask transmission resonance in bi-layer masks
Author(s): Vicky Philipsen; Peter De Bisschop; Kei Mesuda
Show Abstract
ACLV degradation: root cause analysis and effective monitoring strategy
Author(s): Anna Tchikoulaeva; Andre Holfeld; Markus Arend; Eugen Foca
Show Abstract
Printability impact of progressive defects: ammonium sulfate emulation study
Author(s): Brian Grenon; Tracy Huang; Aditya Dayal; Kaustuve Bhattacharyya
Show Abstract
Prevention of chemical residue from growing into Haze defect on PSM pattern edge after normal cleaning process
Author(s): Jaehyuck Choi; Jin-sik Jung; Han-shin Lee; Jongkeun Oh; Soojung Kang; Haeyong Jeong; Yonghoon Kim; HanKu Cho
Show Abstract
Validation of ArF PSM quality using AIMS simulation method in repeated cleaning
Author(s): Dong-Seok Lee; Hyun-Ju Jung; Jung-Kwan Lee; Woo-Gun Jung; Dong-Heok Lee; Cheol Shin; Sang-Soo Choi; Moon-Hwan Choi
Show Abstract
Nanomachining processes for 45, 32 nm node mask repair and beyond
Author(s): Tod Robinson; Andrew Dinsdale; Ron Bozak; Roy White; Michael Archuletta
Show Abstract
Mask CD control (CDC) using AIMS as the CD metrology data source
Author(s): Guy Ben-Zvi; Eitan Zait; Vladimir Dmitriev; Steven Labovitz; Erez Graitzer; Klaus Böhm; Robert Birkner; Thomas Scheruebl
Show Abstract
"What you see is what you print": aerial imaging as an optimal discriminator between printing and non-printing photomask defects
Author(s): Amir Sagiv; Shmoolik Mangan
Show Abstract
A novel approach: high resolution inspection with wafer plane defect detection
Author(s): Carl Hess; Mark Wihl; Rui-fang Shi; Yalin Xiong; Song Pang
Show Abstract
Practical application of aerial imaging mask inspection for memory devices
Author(s): Hyun Joo Baik; Dong Hoon Chung; Yong Hoon Kim; Han Ku Cho; Amir Sagiv; Shmoolik Mangan; Ziv Parizat; Eun Young Park; Yaniv Brami; Dana Bernstein
Show Abstract
Wafer plane inspection for advanced reticle defects
Author(s): Rajesh Nagpal; Firoz Ghadiali; Jun Kim; Tracy Huang; Song Pang
Show Abstract
Resist pattern inspection function for LM7500 reticle inspection system
Author(s): Hideyuki Moribe; Yoshikazu Kato; Kazuyoshi Nakamura; Takeshi Bashomatsu; Takahiro Igeta; Kazuhito Ogihara; Takehiko Okada
Show Abstract
Fast integrated die-to-die transmitted, reflected and STARlight-2 defect inspection on memory masks
Author(s): Andy Lan; Jenny Hsu; Swapnajit Chakravarty; Vincent Hsu; Ellison Chen; Eric Lu; John Miller
Show Abstract
IntenCD: an application for CD uniformity mapping of photomask and process control at maskshops
Author(s): Heebom Kim; MyoungSoo Lee; Sukho Lee; Young-Su Sung; Byunggook Kim; Sang-Gyun Woo; HanKu Cho; Michael Ben Yishai; Lior Shoval; Christophe Couderc
Show Abstract
Controlling phase induced CD non-uniformity effects of PSM photo-masks
Author(s): Dan Rost; Michael Ben-Yishai; Lior Shoval; Christophe Couderc
Show Abstract
Mask CD compensation method using diffraction intensity for lithography equivalent metrology
Author(s): Takaharu Nagai; Takanori Sutou; Yuichi Inazuki; Hiroyuki Hashimoto; Nobuhito Toyama; Yasutaka Morikawa; Hiroshi Mohri; Naoya Hayashi
Show Abstract
Reliable measurement method for complicated OPC pattern
Author(s): Tastuya Aihara; Shinpei Kondo; Masaru Higuchi
Show Abstract
The study to optimize CD uniformity by reliable area CD measurement on 45nm D/R DRAM
Author(s): Yongkyoo Choi; Sunghyun Oh; Munsik Kim; Yongdae Kim; Changreol Kim
Show Abstract
Mask and wafer cost of ownership (COO) from 65 to 22 nm half-pitch nodes
Author(s): Greg Hughes; Lloyd C. Litt; Andrea Wüest; Shyam Palaiyanur
Show Abstract
EUV mask process development status for full field EUV exposure tool
Author(s): Tsukasa Abe; Takashi Adachi; Hideo Akizuki; Hiroshi Mohri; Naoya Hayashi; Kosuke Ishikiriyama
Show Abstract
Effects of mask absorber thickness on printability in EUV lithography with high resolution resist
Author(s): Takashi Kamo; Hajime Aoyama; Toshihiko Tanaka; Osamu Suga
Show Abstract
Impact of mask blank and mirror surface roughness on actinic EUVL mask blank inspection signal
Author(s): Takeshi Yamane; Toshihiko Tanaka; Tsuneo Terasawa; Osamu Suga; Toshihisa Tomie
Show Abstract
Evaluation of defect repair of EUVL mask pattern using FIB-GAE method
Author(s): Tsuyoshi Amano; Yasushi Nishiyama; Hiroyuki Shigemura; Tsuneo Terasawa; Osamu Suga; Ryoji Hagiwara; Kensuke Shiina; Shuichi Kikuchi; Anto Yasaka
Show Abstract
Optimization of measuring conditions for templates of UV nano imprint lithography
Author(s): Kouji Yoshida; Kouichirou Kojima; Makoto Abe; Shiho Sasaki; Masaaki Kurihara; Yasutaka Morikawa; Hiroshi Mohri; Naoya Hayashi
Show Abstract
UV-NIL mask making and imprint evaluation
Author(s): Akiko Fujii; Yuko Sakai; Jun Mizuochi; Takaaki Hiraka; Satoshi Yusa; Koki Kuriyama; Masashi Sakaki; Takanori Sutou; Shiho Sasaki; Yasutaka Morikawa; Hiroshi Mohri; Naoya Hayashi
Show Abstract
Image placement error of photomask due to pattern loading effect: analysis and correction technique for sub-45 nm node
Author(s): Jin Choi; Sang Hee Lee; Dongseok Nam; Byung Gook Kim; Sang-Gyun Woo; Han Ku Cho
Show Abstract
Improvement of position accuracy in mask-writing electron beam lithography with a multi-pass writing strategy for reducing position errors due to resist charging
Author(s): Noriyuki Kobayashi; Kazuya Goto; Tetsuro Wakatsuki; Tadashi Komagata; Yasutoshi Nakagawa
Show Abstract
Evaluation of TF11 attenuated-PSM mask blanks with DUV laser patterning
Author(s): Kezhao Xing; Charles Björnberg; Henrik Karlsson; Adisa Paulsson; Peter Beiming; Jukka Vedenpää; Jonathan Walford
Show Abstract
In-situ chamber clean for chromium etch application
Author(s): Zhigang Mao; Xiaoyi Chen; David Knick; Michael Grimbergen; Madhavi Chandrahood; Ibrahim Ibrahim; Ajay Kumar
Show Abstract
Patterning capability and limitations by pattern collapse in 45nm and below node photo mask production
Author(s): Guen-Ho Hwang; Manish Patil; Soon-Kyu Seo; Chu-Bong Yu; Ik-Boum Hur; Dong Hyun Kim; Cheol Shin; Sung-Mo Jung; Yong-Hyun Lee; Sang-Soo Choi
Show Abstract
A modified dynamical model of drying process of polymer blend solution coated on a flat substrate
Author(s): Hiroyuki Kagami
Show Abstract
A N2/CDA reticle purging approach with enhanced efficiency
Author(s): Chen-Wei Ku; Wen-Jui Tseng; Po-Shin Lee; Shih-Cheng Hu
Show Abstract
Very high sensitivity mask transmittance mapping and measurements based on non imaging optics with Galileo
Author(s): Guy Ben-Zvi; Vladimir Dmitriev; Erez Graitzer; Eitan Zait; Ofir Sharoni; Steven Labovitz
Show Abstract
Novel model of haze generation on photomask
Author(s): Haruko Akutsu; Shinji Yamaguchi; Kyo Otsubo; Makiko Tamaoki; Ayako Shimazaki; Reiko Yoshimura; Fumihiko Aiga; Tsukasa Tada
Show Abstract
An explosive haze formation under low energy exposure
Author(s): Junsik Lee; Yongdae Kim; Yongkyoo Choi; Changreol Kim
Show Abstract
Post cleaned surface modification treatment to prevent near pellicle haze generation in sulfate free cleaned ArF EAPSM
Author(s): Manish Patil; Jong-Min Kim; Sung-Mo Jung; Ik-Boum Hur; Sang-Soo Choi; Yong Hyun Lee
Show Abstract
Implementation of new reticle inspection technology for progressive mask defect detection strategy in wafer fabs
Author(s): Cathy Liu; Alex Lu; Crystal Wang; Eric Guo; Dongsheng Fan; Lisa Yun; Steven Liu; Raj Badoni; Eric Lu
Show Abstract
A study of high peroxynitrite generated in purge head outlet of charger with continuous supply of superior purification CDA system for 193 nm ArF reticle haze prevention
Author(s): Fu-Sheng Chu; Shean-Hwan Chiou
Show Abstract
Haze acceleration system for photo mask application by using high repetition ArF excimer laser
Author(s): Dae-Jin Kim; Hyun-Jung Kim; Seung-Hwan Eom; Kwang-Jae Lee; Woon-Ki Cho; Sang-Hyun Chung
Show Abstract
Die-to-database mask inspection with variable sensitivity
Author(s): Hideo Tsuchiya; Masakazu Tokita; Takehiko Nomura; Tadao Inoue
Show Abstract
Thin-line de-sense capability for database mode inspections with KLA-Tencor TeraScanHR
Author(s): Arosha Goonesekera; Isaac Lee; Bo Mu; Aditya Dayal
Show Abstract
Improvement of image quality and inspection speed in LM7500 reticle inspection system
Author(s): Hideyuki Moribe; Takeshi Bashomatsu; Kenichi Matsumura; Akira Uehara; Hiroyuki Takahashi
Show Abstract
Results of new CD detection capability on advanced reticles
Author(s): Arosha Goonesekera; Heiko Schmalfuss; Isaac Lee; Chun Guan; Aditya Dayal; Thomas Schulmeyer; Jan Heumann
Show Abstract
Comparison of TeraStar SL1, TeraScanHR DDR, DDT and SL2 to identify an efficient mask re-qualification inspection mode for 7Xnm half pitch design node production reticles in advanced memory wafer fab
Author(s): Koji Kaneko; Takanobu Kobayashi; Jinggang Zhu; Norihiko Takatsu; Paul Yu; Kosuke Ito; Toshiaki Kojima; Yoshinori Nagaoka
Show Abstract
Results of new mask contamination inspection capability STARlight2+ 72nm pixel for qualifying memory masks in wafer fabs
Author(s): Russell Dover; Jinggang Zhu; Norbert Schmidt; Michael Lang
Show Abstract
Improving COO on KLA-Tencor wafer fab reticle inspections by implementing pixel migration as new STARlight2+ capability
Author(s): S. M. Yen; Swapnajit Chakravarty; Joe Huang; John Miller; Russell Dover; Den Wang
Show Abstract
Inspectability of PSM masks for the 32nm node using STARlight2+
Author(s): Chain-Ting Huang; Yung-Feng Cheng; Shih-Ming Kuo; Chun-Hsien Huang; Swapnajit Chakravarty; Joe Huang; Jeff Lin; Den Wang
Show Abstract
Qualification of aerial image 193nm inspection tool for all masks and all process steps
Author(s): Dan Rost; Raunak Mann; Ryan Gardner; Dana Bernstein; Dax Olvera; Simon Kurin; Christophe Couderc
Show Abstract
The study of defect inspection with die to model based on aerial image
Author(s): Shinji Kunitani; Atsushi Kobayashi; Susumu Nagashige
Show Abstract
Increasing the predictability of AIMS measurements by coupling to resist simulations
Author(s): Balint Meliorisz; Andreas Erdmann; Thomas Schnattinger; Ulrich Ströβner; Thomas Scherübl; Peter De Bisschop; Vicky Philipsen
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Surface energy control techniques for photomask fabrication and their characterizations with scanning probe microscopy
Author(s): Masaaki Kurihara; Sho Hatakeyama; Kouji Yoshida; Makoto Abe; Daisuke Totsukawa; Yasutaka Morikawa; Hiroshi Mohri; Naoya Hayashi
Show Abstract
Hotspot management in which mask fabrication errors are considered
Author(s): Mitsuyo Kariya; Eiji Yamanaka; Kenji Yoshida; Kenji Konomi; Masaki Satake; Satoshi Tanaka
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The verification of printability about marginal defects and the detectability at the inspection tool in sub 50nm node
Author(s): Hyemi Lee; Goomin Jeong; Kangjun Seo; Sangchul Kim; changreol kim
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Wafer level CD metrology on photomasks using aerial imaging technology
Author(s): Thomas Scherübl; Ulrich Strößner; Holger Seitz; Robert Birkner; Rigo Richter
Show Abstract
IntenCD: mask critical dimension variation mapping
Author(s): Amir Sagiv; Netanel Polonsky; Oren Boiman; Lior Shoval; Michael Ben-Yishai; Shmoolik Mangan
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Registration measurement capability of VISTEC LMS IPRO4 with focus on small features
Author(s): Christian Enkrich; Gunter Antesberger; Oliver Loeffler; Klaus-Dieter Roeth; Frank Laske; Karl-Heinrich Schmidt; Dieter Adam
Show Abstract
Phame: phase measurements on 45nm node phase shift features
Author(s): Ute Buttgereit; Robert Birkner; Dirk Seidel; Sascha Perlitz; Vicky Philipsen; Peter De Bisschop
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Influence of mask surface processing on CD-SEM imaging
Author(s): Marc Hauptmann; Lukas M. Eng; Jan Richter
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Finite element simulation of light propagation in non-periodic mask patterns
Author(s): Lin Zschiedrich; Frank Schmidt
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PROVE: a photomask registration and overlay metrology system for the 45 nm node and beyond
Author(s): G. Klose; D. Beyer; M. Arnz; N. Kerwien; N. Rosenkranz
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Advanced mask data processing for 32nm and beyond
Author(s): John Nogatch; Dan Hung; Raghava Kondepudy; Johnny Yeap
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Comparison of verification methods for OASIS files: hierarchical or flat?
Author(s): Kokoro Kato; Yoshiyuki Taniguchi; Masakazu Endo; Kuninori Nishizawa; Tadao Inoue; Toshiaki Fujii
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Utilization of design intent information for mask manufacturing
Author(s): Kokoro Kato; Masakazu Endo; Tadao Inoue; Masaki Yamabe
Show Abstract
An extraction of repeating patterns from OPCed layout data
Author(s): Fujimoto Yoshihiro; Masahiro Shoji; Kokoro Kato; Tadao Inoue; Masaki Yamabe
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Verification of mask manufacturing load estimation (MiLE)
Author(s): Yoshikazu Nagamura; Shogo Narukawa; Yoshiharu Shika; Hiroshi Kabashima; Aki Nakajo; Isao Miyazaki; Satoshi Aoyama; Yasutaka Morikawa; Hiroshi Mohri; Tomoko Hatada; Masahiro Kato; Hidemichi Kawase
Show Abstract
Evaluation of hotspot analysis flow using mask model
Author(s): Satoshi Kawashima; Katsuya Hayano; Naoko Kuwahara; Syougo Narukawa; Yasutaka Morikawa; Hiroshi Mohri; Naoya Hayashi
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Comparison of triple-patterning decomposition algorithms using aperiodic tiling patterns
Author(s): Christopher Cork; Jean-Christophe Madre; Levi Barnes
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Electrical metrics for lithographic line-end tapering
Author(s): Puneet Gupta; Kwangok Jeong; Andrew B. Kahng; Chul-Hong Park
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Modeling mask pellicle effects for OPC/RET
Author(s): Lena Zavyalova; Hua Song; Kevin Lucas; Qiaolin Zhang; James Shiely
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A new approach to the DFM for the metals
Author(s): No-Young Chung; Hee-Sang Bae; Beum-Seok Seo; Sung-Ho Lee; Sung-Il Kim; Sun-Yong Lee
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Mask process effect aware OPC modeling
Author(s): Kyoil Koo; Sooryong Lee; Jason Hwang; Daniel Beale; Matt St. John; Robert Lugg; Seunghee Baek; Munhoe Do; Junghoe Choi; Youngchang Kim; Minjong Hong
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Mask shot count reduction strategies in the OPC flow
Author(s): James Word; Keisuke Mizuuchi; Sai Fu; William Brown; Emile Sahouria
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Application of super-diffraction-lithography (SDL) for advanced logic
Author(s): Shuji Nakao; Shinroku Maejima; Yuko Mitarai; Takuya Hagiwara; Sachiko Ogawa; Tetsuro Hanawa; Kazuyuki Suko
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An IntenCD map of a reticle as a feed-forward input to DoseMapper
Author(s): Michael Ben Yishai; Jo Finders; Robert Kazinczi; Arno Bleeker; Paul Luehrmann; Ingrid Janssen; Frank Duray; Lior Shoval; Christophe Couderc; Rich Piech; Noam Hillel; Ilan Englard
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Tool-induced hotspot fixing flow for high volume products
Author(s): Hiromitsu Mashita; Toshiya Kotani; Fumiharu Nakajima; Hidefumi Mukai; Kazuya Sato; Satoshi Tanaka; Kohji Hashimoto; Soichi Inoue
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Dependence of mask topography effects on pattern variation under hyper-NA lithography
Author(s): Akiko Mimotogi; Masamitsu Itoh; Shoji Mimotogi; Kazuya Sato; Takashi Sato; Satoshi Tanaka; Soichi Inoue
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Optimization of mask absorber stacks and illumination settings for contact hole imaging
Author(s): Andreas Erdmann; Tim Fühner; Peter Evanschitzky
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Impact of illumination source symmetrization in OPC
Author(s): John L. Sturtevant; Le Hong; Srividya Jayaram; Stephen P. Renwick; Martin McCallum; Peter De Bisschop
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Predicting lithography costs: guidance for ≤ 32 nm patterning solutions
Author(s): Andrew J. Hazelton; Andrea Wüest; Greg Hughes; Michael Lercel
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The source of carbon contamination for EUV mask production
Author(s): Yongdae Kim; Junsik Lee; Yongkyoo Choi; Changreol Kim
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A practical solution to the critical problem of 193 nm reticle haze
Author(s): David L. Halbmaier; Yasushi Ohyashiki; Oleg Kishkovich
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A study of mask specification in spacer patterning technology
Author(s): Hidefumi Mukai; Yuuji Kobayashi; Shinji Yamaguchi; Kenji Kawano; Kohji Hashimoto
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