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Proceedings of SPIE Volume 7025

Micro- and Nanoelectronics 2007
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Volume Details

Volume Number: 7025
Date Published: 23 May 2008
Softcover: 63 papers (552) pages
ISBN: 9780819472380

Table of Contents
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Front Matter: Volume 7025
Author(s): Proceedings of SPIE
Multilayer Zr/Si filters for EUV lithography and for radiation source metrology
Author(s): M. S. Bibishkin; N. I. Chkhalo; S. A. Gusev; E. B. Kluenkov; A. Ya. Lopatin; V. I. Luchin; A. E. Pestov; N. N. Salashchenko; L. A. Shmaenok; N. N. Tsybin; S. Yu. Zuev
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Correction of the EUV mirror substrate shape by ion beam
Author(s): N. Chkhalo; L. Paramonov; A. Pestov; D. Raskin; N. Salashchenko
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Investigation of fluorescence on wavelength 13.5 nm of x-ray tube for nanolithographer
Author(s): N. Chkhalo; I. Zabrodin; I. Kas'kov; E. Kluenkov; A. Pestov; N. Salashchenko
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Manufacturing and investigation of objective lens for ultrahigh resolution lithography facilities
Author(s): Nikolay I. Chkhalo; Evgeniy B. Kluenkov; Aleksey E. Pestov; Denis G. Raskin; Nikolay N. Salashchenko; Mikhail N. Toropov
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A new source of a reference spherical wave for a point diffraction interferometer
Author(s): Nikolay I. Chkhalo; Alexander Yu. Klimov; Denis G. Raskin; Vladimir V. Rogov; Nikolay N. Salashchenko; Mikhail N. Toropov
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A plane wave diffraction on a pin-hole in a film with a finite thickness and real electrodynamic properties
Author(s): Nikolay I. Chkhalo; Illarion A. Dorofeev; Nikolay N. Salashchenko; Mikhail N. Toropov
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Mask image formation by electron beam deposition from vapor phase
Author(s): M. A. Bruk; E. N. Zhikharev; S. L. Shevchuk; I. A. Volegova; A. V. Spirin; E. N. Teleshov; V. A. Kalnov; Yu. P. Maishev
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Focused ion beam source of a new type for micro- and nanoelectronics technologies
Author(s): V. L. Varentsov
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Measurement of atomic hydrogen flow density during GaAs surface cleaning
Author(s): V. A. Kagadei; E. V. Nefyodtsev; D. I. Proskurovski; S. V. Romanenko
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Investigation of impurity composition of atomic hydrogen beam formed by a low-pressure arc-discharge source
Author(s): V. A. Kagadei; D. I. Proskurovski; S. V. Romanenko
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Theoretical study of ionization processes in BF3 plasma
Author(s): V. P. Kudrya
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Reactive sputtering of metal targets: influence of reactive atoms implantation
Author(s): V. A. Marchenko
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Effect of quartz window temperature on plasma composition during STI etch
Author(s): E. V. Danilkin; D. Shamiryan; M. R. Baklanov; A. P. Milenin; W. Boullart; G. Y. Krasnikov; O. P. Gutshin; A. I. Mochalov
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Langmuir probe applications in monitoring of plasma etching
Author(s): Andrey V. Miakonkikh; Konstantin V. Rudenko; Alexander A. Orlikovsky
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An end point detection method based on induced current and an automatic control device for an ion etching system
Author(s): S. B. Simakin; G. D. Kuznetsov; E. A. Mitrofanov
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The method of thin metal films adhesion increasing for the lowered dimensions structures
Author(s): N. L. Kazanskiy; V. A. Kolpakov; V. D. Paranin; M. S. Polikarpov
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Surprising phase transformation of a-Si:H films under femtosecond laser impact
Author(s): Vladimir A. Volodin; Mikhail D. Efremov; Grigoriy A. Kachurin; Sergey A. Kochubei; Alexander G. Cherkov; M. Deutschmann; N. Baersch
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Micro-scale domain structure formation by e-beam point writing on the Y cut surfaces of LiTaO3 crystals
Author(s): L. S. Kokhanchik; D. V. Punegov
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Intersubband optical transitions in InAs/GaSb broken-gap quantum wells
Author(s): I. Semenikhin; A. Zakharova; K. Nilsson; K. A. Chao
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Silicon avalanche photodiodes for particle detection
Author(s): I. B. Chistokhin; O. P. Pchelyakov; E. G. Tishkovsky; V. I. Obodnikov; V. V. Maksimov; A. A. Ivanov; E. Gramsch
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Graphene nanoelectronics: electrostatics and kinetics
Author(s): G. I. Zebrev
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The method for the determination of electrical self-capacitance of the atomic and molecular scale objects
Author(s): V. V. Shorokhov; E. S. Soldatov; V. G. Elenskiy
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Effects of spatial reproduction at the interference of the electron waves in semiconductor 1D nanostructures with parabolic quantum wells
Author(s): V. A. Petrov; A. V. Nikitin
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Method of creation of monomolecular transistor with overhanging electrodes
Author(s): I. V. Sapkov; E. S. Soldatov; V. G. Elensky
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Creation of nanometer gaps between thin-film metal electrodes by the method of electromigration
Author(s): A. N. Kuturov; E. S. Soldatov; A. S. Stepanov
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Pulsed laser deposition of layers and nanostructures based on cadmium telluride and bismuth
Author(s): Arsham Yeremyan; Hovsep Avetisyan; Karapet Avjyan; Gevorg Vardanyan; Ashot Khachatryan
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Non-equilibrium magnetism of nanoparticles revealed in static and radiofrequency measurements
Author(s): M. A. Chuev; N. P. Aksenova; P. G. Medvedev; A. M. Afanas'ev
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Finite size effects in antiferromagnetic multilayers
Author(s): Victor V. Kostyuchenko; Marina V. Kostyuchenko
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Epitaxial Fe films and structures
Author(s): Ilia V. Malikov; Lev A. Fomin; Valery Yu. Vinnichenko; Gennady M. Mikhailov
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Investigation of re-switching properties of ferromagnetic contacts in Py/Mo microstructures
Author(s): Valery Yu. Vinnichenko; Anatoliy V. Chernykh; Lev A. Fomin; Gennady M. Mikhailov
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Molecular-beam epitaxy of ultrathin Si films on sapphire
Author(s): P. A. Shilyaev; D. A. Pavlov; E. V. Korotkov; M. V. Treushnikov
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Formation of TiN/CoSi2 bilayer from Co/Ti/Si structure in a non-isothermal reactor
Author(s): Valery I. Rudakov; Valery N. Gusev
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Formation of thin ZrO2 layers for nanotransistor gate structures by electron beam evaporation
Author(s): D. G. Drozdov; I. A. Khorin; V. B. Kopylov; A. A. Orlikovsky; A. E. Rogozhin; A. G. Vasiliev
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Films with regulated optical and electrophysical parameters
Author(s): A. E. Akinin; I. S. Borisov; V. V. Chernokogin; Y. A. Kontsevoy; E. A. Mitrofanov; S. B. Simakin; Y. A. Zavadsky
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Direct measurement of the linewidth of relief element on AFM in nanometer range
Author(s): Yu. A. Novikov; M. N. Filippov; I. D. Lysov; A. V. Rakov; V. A. Sharonov; P. A. Todua
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Nanorelief elements in reference measures for scanning electron microscopy
Author(s): Yu. A. Novikov; S. A. Darznek; M. N. Filippov; V. B. Mityukhlyaev; A. V. Rakov; P. A. Todua
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Capabilities of microinterferometer with digital recording of images for studying micro-objects with sub-nanometer resolution
Author(s): Nikolay I. Chkhalo; Denis G. Raskin; Nikolay N. Salashchenko
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Falling down capacitance impedance under light illumination of MDS-structures with three-layer SiNx dielectrics
Author(s): Sofia A. Arzhannikova; Mikhail D. Efremov; Vladimir A. Volodin; Genadiy N. Kamaev; Denis V. Marin; Vladimir S. Shevchuk; Artem A. Vaschenkov; Sergey A. Kochubei; Alexander A. Popov; Yuri A. Minakov
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AlxGa(1-x)N/GaN structure diagnostic by C-V characteristics method
Author(s): K. L. Enisherlova; I. B. Gulyaev; V. G. Goryachev; A. U. Dorofeev; E. M. Temper; N. B. Gladisheva
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The new approach in the determination of the dependency of surface charge density on semiconductor surface potential based voltage: capacity analysis of the depletion region of MIS-structures
Author(s): G. V. Chucheva; A. G. Zhdan
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Parasitic bipolar effect in modern SOI CMOS technologies
Author(s): V. E. Shunkov; M. S. Gorbunov; G. I. Zebrev; B. V. Vasilegin
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Radiation induced leakage due to stochastic charge trapping in isolation layers of nanoscale MOSFETs
Author(s): G. I. Zebrev; M. S. Gorbunov; V. S. Pershenkov
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The spatial features AlxGa 1-xN/GaN heterostructure
Author(s): Kira L. Enisherlova; Rafik M. Immamov; I. M. Subbotin; T. F. Rusak; E. M. Temper
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Features of evolution of implanted profiles during RTA in non-isothermal reactor
Author(s): Valery I. Rudakov; Alexander A. Victorov; Yuri I. Denisenko; Boris V. Mochalov; Vladimir V. Ovcharov
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Stable silicon resistors at 20-160 degrees C due to divacancy involving high purity neutron doped Si
Author(s): Gennady N. Kamaev; Mikhail D. Efremov; Victor A. Stuchinsky; Boris I. Mikhailov; Stepan G. Kurkin
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Sign magnetosensitivity of dual-collector lateral bipolar magnetotransistor
Author(s): R. D. Tikhonov
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Research of the disbalance mechanism of dual collector lateral bipolar magnetotransistor
Author(s): R. D. Tikhonov; S. A. Polomoshnov; A. V. Kozlov; A. Ju. Krasukov
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Non-volatile electrically reprogrammable memory matrix on self-forming conducting nanostructures with an integrated transistor electric decoupling of cells
Author(s): Victor M. Mordvintsev; Sergey E. Kudrjavtsev; Valeriy L. Levin; Ludmila A. Tsvetkova
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High energy microelectromechanical oscillator based on the electrostatic microactuator
Author(s): I. Baginsky; Edvard Kostsov; Victor Sobolev
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Divergence instability of an extensible microplate subjected to nonlinear electrostatic pressure
Author(s): Ghader Rezazadeh; Hadi Yagubizade; Yashar Alizadeh
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Electromechanical energy conversion in the nanometer gaps
Author(s): E. G. Kostsov
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Simulation, fabrication, and dynamics characteristics of electrostatically actuated switches
Author(s): A. V. Postnikov; Ildar I. Amirov; V. V. Naumov; V. A. Kalnov
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Comparative analysis of pseudo-potential and tight-binding band structure calculations with an analytical two-band k-p model: conduction band of silicon
Author(s): Viktor A. Sverdlov; Hans Kosina; Siegfried Selberherr
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Physically based simulation of fully depleted SOI MOS transistors at nanometer gate lengths
Author(s): A. Burenkov; C. Kampen; J. Lorenz; H. Ryssel
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All-quantum simulation of an ultra-small SOI MOSFET
Author(s): V. Vyurkov; I. Semenikhin; V. Lukichev; A. Burenkov; A. Orlikovsky
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Monte Carlo study of influence of channel length and depth on electron transport in SOI MOSFETs
Author(s): Oleg Zhevnyak; Vladimir Borzdov; Andrey Borzdov; Dmitry Pozdnyakov; Fadei Komarov
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Temperature effect on electron transport in conventional short channel MOSFETs: Monte Carlo simulation
Author(s): Oleg Zhevnyak
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Modeling of powerful GaAs MESFET
Author(s): A. Shestakov; A. Myasnikov; K. Zhuravlev
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Modeling of vertical transistor with electrically variable junctions in ISE TCAD
Author(s): A. E. Rogozhin; I. A. Khorin; D. G. Drozdov; A. G. Vasiliev
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A comparison of fitness function evaluation schedules for multi-objective univariate marginal distribution optimization of mixed analog-digital signal circuits
Author(s): Lyudmila Zinchenko; Matthias Radecker; Fabio Bisogno
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A new model for the copper CMP kinetics
Author(s): R. Goldstein; T. Makhviladze; M. Sarychev
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Influence of vacancy clusters on the adhesion properties of interfaces
Author(s): R. Goldstein; T. Makhviladze; M. Sarychev
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Modeling of non-stationary electron transport in semiconductor nanowires and carbon nanotubes
Author(s): Dmitry Pozdnyakov; Andrei Borzdov; Vladimir Borzdov; Fadei Komarov
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