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Proceedings of SPIE Volume 6924

Optical Microlithography XXI
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Volume Details

Volume Number: 6924
Date Published: 20 March 2008
Softcover: 165 papers (1738) pages
ISBN: 9780819471093

Table of Contents
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Front Matter: Volume 6924
Author(s): Proceedings of SPIE
If it moves, simulate it!
Author(s): Andrew Neureuther
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Interactions of double patterning technology with wafer processing, OPC and design flows
Author(s): Kevin Lucas; Chris Cork; Alex Miloslavsky; Gerry Luk-Pat; Levi Barnes; John Hapli; John Lewellen; Greg Rollins; Vincent Wiaux; Staf Verhaegen
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Toward 3nm overlay and critical dimension uniformity: an integrated error budget for double patterning lithography
Author(s): William H. Arnold
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A study of CD budget in spacer patterning technology
Author(s): Hidefumi Mukai; Eishi Shiobara; Shinya Takahashi; Kohji Hashimoto
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Double patterning for 32nm and below: an update
Author(s): Jo Finders; Mircea Dusa; Bert Vleeming; Henry Megens; Birgitt Hepp; Mireille Maenhoudt; Shaunee Cheng; Tom Vandeweyer
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Split and design guidelines for double patterning
Author(s): Vincent Wiaux; Staf Verhaegen; Shaunee Cheng; Fumio Iwamoto; Patrick Jaenen; Mireille Maenhoudt; Takashi Matsuda; Sergei Postnikov; Geert Vandenberghe
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Double patterning combined with shrink technique to extend ArF lithography for contact holes to 22nm node and beyond
Author(s): Xiangqun Miao; Lior Huli; Hao Chen; Xumou Xu; Hyungje Woo; Chris Bencher; Jen Shu; Chris Ngai; Christopher Borst
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Negative and iterated spacer lithography processes for low variability and ultra-dense integration
Author(s): Andrew Carlson; Tsu-Jae King Liu
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Double patterning of contact array with carbon polymer
Author(s): Woo-Yung Jung; Guee-Hwang Sim; Sang-Min Kim; Choi-Dong Kim; Sung-Min Jeon; Keunjun Kim; Sang-Wook Park; Byung-Seok Lee; Sung-Ki Park; Hoon-Hee Cho; Ji-Soo Kim
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PDL oxide enabled pitch doubling
Author(s): Nader Shamma; Wen-Ben Chou; Ilia Kalinovski; Don Schlosser; Tom Mountsier; Collin Mui; Raihan Tarafdar; Bart van Schravendijk
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Pixelated phase mask as novel lithography RET
Author(s): Yan Borodovsky; Wen-Hao Cheng; Richard Schenker; Vivek Singh
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Mask optimization for arbitrary patterns with 2D-TCC resolution enhancement technique
Author(s): Miyoko Kawashima; Kenji Yamazoe; Yoshiyuki Sekine; Manabu Hakko; Masakatsu Ohta; Tokuyuki Honda
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Comparative study of binary intensity mask and attenuated phase shift mask using hyper-NA immersion lithography for sub-45nm era
Author(s): Tae-Seung Eom; Jun-Taek Park; Jung-Hyun Kang; Sarohan Park; Sunyoung Koo; Jin-Soo Kim; Byoung-Hoon Lee; Chang-Moon Lim; HyeongSoo Kim; Seung-Chan Moon
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Integration of pixelated phase masks for full-chip random logic layers
Author(s): Richard Schenker; Srinivas Bollepalli; Bin Hu; Kenny Toh; Vivek Singh; Karmen Yung; Wen-hao Cheng; Yan Borodovsky
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Applications of TM polarized illumination
Author(s): Bruce Smith; Jianming Zhou; Peng Xie
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Enabling technology scaling with "in production" lithography processes
Author(s): Tejas Jhaveri; Andrzej Strojwas; Larry Pileggi; Vyachelav Rovner
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Hyper-NA imaging of 45nm node random CH layouts using inverse lithography
Author(s): E. Hendrickx; A. Tritchkov; K. Sakajiri; Y. Granik; M. Kempsell; G. Vandenberghe
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Patterning strategy and performance of 1.3NA tool for 32nm node lithography
Author(s): Shoji Mimotogi; Masaki Satake; Yosuke Kitamura; Kazuhiro Takahata; Katsuyoshi Kodera; Hiroharu Fujise; Tatsuhiko Ema; Koutaro Sho; Kazutaka Ishigo; Takuya Kono; Masafumi Asano; Kenji Yoshida; Hideki Kanai; Suigen Kyoh; Hideaki Harakawa; Akiko Nomachi; Tatsuya Ishida; Katsura Miyashita; Soichi Inoue
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Post-decomposition assessment of double patterning layout
Author(s): Juliet Rubinstein; Andrew R. Neureuther
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Alternative process schemes for double patterning that eliminate the intermediate etch step
Author(s): M. Maenhoudt; R. Gronheid; N. Stepanenko; T. Matsuda; D. Vangoidsenhoven
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Double patterning down to k1=0.15 with bilayer resist
Author(s): Christoph Noelscher; Franck Jauzion-Graverolle; Marcel Heller; Matthias Markert; Bee-Kim Hong; Ulrich Egger; Dietmar Temmler
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Double patterning requirements for optical lithography and prospects for optical extension without double patterning
Author(s): Andrew J. Hazelton; Shinji Wakamoto; Shigeru Hirukawa; Martin McCallum; Nobutaka Magome; Jun Ishikawa; Céline Lapeyre; Isabelle Guilmeau; Sébastien Barnola; Stéphanie Gaugiran
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Making a trillion pixels dance
Author(s): Vivek Singh; Bin Hu; Kenny Toh; Srinivas Bollepalli; Stephan Wagner; Yan Borodovsky
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Validation of inverse lithography technology (ILT) and its adaptive SRAF at advanced technology nodes
Author(s): Linyong Pang; Grace Dai; Tom Cecil; Thuc Dam; Ying Cui; Peter Hu; Dongxue Chen; Ki-Ho Baik; Danping Peng
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General imaging of advanced 3D mask objects based on the fully-vectorial extended Nijboer-Zernike (ENZ) theory
Author(s): Sven van Haver; Olaf T. A. Janssen; Joseph J. M. Braat; Augustus J. E. M. Janssen; H. Paul Urbach; Silvania F. Pereira
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Radiometric consistency in source specifications for lithography
Author(s): Alan E. Rosenbluth; Jaione Tirapu Azpiroz; Kafai Lai; Kehan Tian; David O.S. Melville; Michael Totzeck; Vladan Blahnik; Armand Koolen; Donis Flagello
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Coupled-dipole modelling for 3D mask simulation
Author(s): Vlad Temchenko; Chinteong Lim; Dave Wallis; Jens Schneider; Martin Niehoff
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Generalized inverse problem for partially coherent projection lithography
Author(s): Paul S. Davids; Srinivas B. Bollepalli
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Massively-parallel FDTD simulations to address mask electromagnetic effects in hyper–NA immersion lithography
Author(s): Jaione Tirapu Azpiroz; Geoffrey W. Burr; Alan E. Rosenbluth; Michael Hibbs
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Polarization characteristics of state-of-art lithography optics reconstructed from on-body measurement
Author(s): Toru Fujii; Jun Kogo; Kosuke Suzuki; Masayasu Sawada
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Extended Nijboer-Zernike (ENZ) based mask imaging: efficient coupling of electromagnetic field solvers and the ENZ imaging algorithm
Author(s): Olaf T. A. Janssen; Sven van Haver; Augustus J. E. M. Janssen; Joseph J. M. Braat; H. Paul Urbach; Silvania F. Pereira
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Evaluating the accuracy of a calibrated rigorous physical resist model under various process and illumination conditions
Author(s): Stewart A. Robertson; Byung-Sung Kim; Woon-Hyuk Choi; Yoo-Hyon Kim; John J. Biafore; Mark D. Smith
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High refractive index materials design for the next generation ArF immersion lithography
Author(s): Taiichi Furukawa; Takanori Kishida; Kyouyuu Yasuda; Tsutomu Shimokawa; Zhi Liu; Mark Slezak; Katsuhiko Hieda
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Studies of high index immersion lithography
Author(s): Yasuhiro Ohmura; Hiroyuki Nagasaka; Tomoyuki Matsuyama; Toshiharu Nakashima; Teruki Kobayashi; Motoi Ueda; Soichi Owa
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High-n immersion lithography
Author(s): Harry Sewell; Jan Mulkens; Paul Graeupner; Diane McCafferty; Louis Markoya; Sjoerd Donders; Rogier Cortie; Ralph Meijers; Fabrizio Evangelista; Nandarisi Samarakone
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High-index immersion lithography: preventing lens photocontamination and identifying optical behavior of LuAG
Author(s): V. Liberman; M. Rothschild; S. T. Palmacci; R. Bristol; J. Byers; N. J. Turro; X. Lei; N. O'Connor; P. A. Zimmerman
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High-index immersion fluids enabling cost-effective single-exposure lithography for 32 nm half pitches
Author(s): Roger H. French; Hoang V. Tran; Doug J. Adelman; Nyrissa S. Rogado; Mureo Kaku; Michael Mocella; Charles Y. Chen; Eric Hendrickx; Freida Van Roey; Adam S. Bernfeld; Rebekah A. Derryberry
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Immersion defectivity study with volume production immersion lithography tool for 45 nm node and below
Author(s): Katsushi Nakano; Shiro Nagaoka; Masato Yoshida; Yasuhiro Iriuchijima; Tomoharu Fujiwara; Kenichi Shiraishi; Soichi Owa
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Focus, dynamics, and defectivity performance at wafer edge in immersion lithography
Author(s): Takao Tamura; Naka Onoda; Masafumi Fujita; Takayuki Uchiyama
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The rapid introduction of immersion lithography for NAND flash: challenges and experience
Author(s): Chan-Tsun Wu; Hung Ming Lin; Wei-Ming Wu; Meng-Hsun Chan; Benjamin Szu-Min Lin; Kuan-Heng Lin; Andrew J. Hazelton; Toshio Ohhashi; Katsushi Nakano; Yasuhiro Iriuchijima; Chunhsin Lee; Long Hung
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Immersion defect performance and particle control method for 45nm mass production
Author(s): Takahito Chibana; Masamichi Kobayashi; Hitoshi Nakano; Mikio Arakawa; Yoichi Matsuoka; Youji Kawasaki; Masayuki Tanabe; Hirohisa Oda
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Development of a computational lithography roadmap
Author(s): J. Fung Chen; Hua-Yu Liu; Thomas Laidig; Christian Zuniga; Yu Cao; Robert Socha
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Analysis of OPC optical model accuracy with detailed scanner information
Author(s): Lena Zavyalova; Kevin Lucas; Qiaolin Zhang; Yongfa Fan; Satyendra Sethi; Hua Song; Jacek Tyminski
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Hybrid Hopkins-Abbe method for modeling oblique angle mask effects in OPC
Author(s): Konstantinos Adam; Michael C. Lam
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Robust PPC and DFM methodology for exposure tool variations
Author(s): Toshiya Kotani; Fumiharu Nakajima; Hiromitsu Mashita; Kazuya Sato; Satoshi Tanaka; Soichi Inoue
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Fabrication of defect-free full-field pixelated phase mask
Author(s): Wen-Hao Cheng; Jeff Farnsworth; Wai Kwok; Andrew Jamieson; Nathan Wilcox; Matt Vernon; Karmen Yung; Yi-Ping Liu; Jun Kim; Eric Frendberg; Scott Chegwidden; Richard Schenker; Yan Borodovsky
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Advanced OPC and 2D verification for tip engineering using aggressive illuminations
Author(s): X. Zhang; T. Lukanc; H. Yang; B. Ward
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Optimization procedure of exposure tools with polarization aberrations
Author(s): Tadashi Arai; Akihiro Yamada; Kenichiro Mori; Yoshinori Osaki; Toshiyuki Yoshihara; Yasuo Hasegawa
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Proposal for determining exposure latitude requirements
Author(s): Harry J. Levinson; Yuansheng Ma; Marcel Koenig; Bruno La Fontaine; Rolf Seltmann
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Influence of shot noise on CDU with DUV, EUV, and E-beam
Author(s): Zhih-Yu Pan; Chun-Kuang Chen; Tsai-Sheng Gau; Burn J. Lin
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Determining DOF requirements needed to meet technology process assumptions
Author(s): Allen Gabor; Andrew Brendler; Bernhard Liegl; Colin Brodsky; Gerhard Lembach; Scott Mansfield; Shailendra Mishra; Timothy Brunner; Timothy Wiltshire; Vinayan Menon; Wai-kin Li
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Extending scatterometry to the measurements of sub 40 nm features, double patterning structures, and 3D OPC patterns
Author(s): Oleg Kritsun; Bruno La Fontaine; Yongdong Liu; Chandra Saru Saravanan
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Recent performance results of Nikon immersion lithography tools
Author(s): Andrew J. Hazelton; Kenichi Shiraishi; Shinji Wakamoto; Yuuki Ishii; Masahiko Okumura; Nobutaka Magome; Hiroyuki Suzuki
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Performance of the FPA-7000AS7 1.35 NA immersion exposure system for 45-nm mass production
Author(s): Keiji Yoshimura; Hitoshi Nakano; Hideo Hata; Nobuyoshi Deguchi; Masamichi Kobayashi; Takeaki Ebihara; Yoshio Kawanobe; Tsuneo Kanda
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Latest developments on immersion exposure systems
Author(s): Jan Mulkens; Jos de Klerk; Martijn Leenders; Fred de Jong; Jan Willem Cromwijk
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Tool-to-tool optical proximity effect matching
Author(s): L. Van Look; Joost Bekaert; Peter De Bisschop; Jeroen Van de Kerkhove; Geert Vandenberghe; Koen Schreel; Jasper Menger; Guido Schiffelers; Edwin Knols; Rob Willekers
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XLR 600i: recirculating ring ArF light source for double patterning immersion lithography
Author(s): Vladimir Fleurov; Slava Rokitski; Robert Bergstedt; Hong Ye; Kevin O’Brien; Robert Jacques; Fedor Trintchouk; Efrain Figueroa; Theodore Cacouris; Daniel Brown; William Partlo
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An intelligent imaging system for ArF scanner
Author(s): Tomoyuki Matsuyama; Yasuhiro Ohmura; Toshiharu Nakashima; Yusaku Uehara; Taro Ogata; Hisashi Nishinaga; Hironori Ikezawa; Tsuyoshi Toki; Slava Rokitski; James Bonafede
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In-situ polarimetry of illumination for 193-nm lithography
Author(s): Hiroshi Nomura; Yohko Furutono
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Understanding illumination effects for control of optical proximity effects (OPE)
Author(s): Donis G. Flagello; Bernd Geh; Robert Socha; Peng Liu; Yu Cao; Roland Stas; Oliver Natt; Jörg Zimmermann
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Thermal aberration control in projection lens
Author(s): Toshiharu Nakashima; Yasuhiro Ohmura; Taro Ogata; Yusaku Uehara; Hisashi Nishinaga; Tomoyuki Matsuyama
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Imaging performance optimization for hyper-NA scanner systems in high volume production
Author(s): Mark van de Kerkhof; Eelco van Setten; Andre Engelen; Vincent Plachecki; Hua-yu Liu; Emil Schmitt-Weaver; Wilbert Rooijakkers; Klaus Simon
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Monitoring polarization at 193nm high-numerical aperture with phase shift masks: experimental results and industrial outlook
Author(s): Gregory McIntyre; Richard Tu
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A comprehensive comparison between double patterning and double patterning with spacer on sub-50nm product implementation
Author(s): C. F. Tseng; C. C. Yang; Elvis Yang; T. H. Yang; K. C. Chen; C. Y. Lu
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100 nm half–pitch double exposure KrF lithography using binary masks
Author(s): S. Geisler; J. Bauer; U. Haak; D. Stolarek; K. Schulz; H. Wolf; W. Meier; M. Trojahn; E. Matthus
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Double patterning using dual spin-on Si containing layers with multilayer hard mask process
Author(s): Mamoru Terai; Takeo Ishibashi; Masaaki Shinohara; Kazumasa Yonekura; Takuya Hagiwara; Tetsuro Hanawa; Teruhiko Kumada
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45nm and 32nm half-pitch patterning with 193nm dry lithography and double patterning
Author(s): Huixiong Dai; Chris Bencher; Yongmei Chen; Hyungje Woo; Chris Ngai; Xumou Xu
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A new OPC method for double patterning technology
Author(s): Yijie Pan; Hongbo Zhang; Ye Chen
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Study of ELS technology for random logic LSI toward 32-nm node
Author(s): Yuji Setta; Kazumasa Morishita; Katsuyoshi Kobayashi; Tatsuo Chijimatsu; Satoru Asai
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Double patterning in lithography for 65nm node with oxidation process
Author(s): Eunsoo Jeong; Jeahee Kim; Kwangsun Choi; Minkon Lee; Doosung Lee; Myungsoo Kim; Chansik Park
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Precise CD control techniques for double patterning and sidewall transfer
Author(s): Eiichi Nishimura; Masato Kushibiki; Koichi Yatsuda
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Fabrication of contact/via holes for 32-nm technology device using cost-effective RIE CD shrink process and double patterning technique
Author(s): Masato Kushibiki; Eiichi Nishimura; Koichi Yatsuda
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Double patterning overlay and CD budget for 32 nm technology node
Author(s): Umberto Iessi; Sara Loi; Antonio Salerno; Pierluigi Rigolli; Elio De Chiara; Catia Turco; Roberto Colombo; Marco Polli; Antonio Mani
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Double exposure double etch for dense SRAM: a designer's dream
Author(s): Chandra Sarma; Allen Gabor; Scott Halle; Henning Haffner; Klaus Herold; Len Tsou; Helen Wang; Haoren Zhuang
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An analysis of double exposure lithography options
Author(s): Saul Lee; Jeffrey Byers; Kane Jen; Paul Zimmerman; Bryan Rice; Nicholas J. Turro; C. Grant Willson
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Double printing through the use of ion implantation
Author(s): Nandasiri Samarakone; Paul Yick; Mary Zawadzki; Sang-Jun Choi
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30nm half-pitch metal patterning using Moti CD shrink technique and double patterning
Author(s): Janko Versluijs; J.-F. De Marneffe; Danny Goossens; Maaike Op de Beeck; Tom Vandeweyer; Vincent Wiaux; Herbert Struyf; Mireille Maenhoudt; Mohand Brouri; Johan Vertommen; Ji Soo Kim; Helen Zhu; Reza Sadjadi
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Enabling 35nm double patterning contact imaging using a novel CD shrink process
Author(s): Yoshiaki Yamada; Michael M. Crouse; Shannon Dunn; Tetsu Kawasaki; Satoru Shimura; Eiichi Nishimura; Yoshitsugu Tanaka; Judy Galloway; Bill Pierson; Robert Routh
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Prediction of imaging performance of immersion lithography using high refractive index fluid
Author(s): Takashi Sato; Masamitsu Itoh; Akiko Mimotogi; Shoji Mimotogi; Kazuya Sato; Satoshi Tanaka
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Contrast management of 193i interferometry to be close to scanners contrast conditions
Author(s): Alexandre Lagrange; Philippe Bandelier; Christelle Charpin; Olivier Lartigue
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Immersion exposure system using high-index materials
Author(s): Keita Sakai; Yuichi Iwasaki; Sunao Mori; Akihiro Yamada; Makoto Ogusu; Keiji Yamashita; Tomofumi Nishikawara; Takatoshi Tanaka; Noriyasu Hasegawa; Shin-ichi Hara; Yutaka Watanabe
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Continuing 193nm optical lithography for 32nm imaging and beyond
Author(s): Emil C. Piscani; Dominic Ashworth; Jeff Byers; Chris Van Peski; Paul Zimmerman; Bryan J. Rice
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Novel refractive optics enable multipole off-axis illumination
Author(s): T. Bizjak; T. Mitra; D. Hauschild; L. Aschke
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45nm node logic device OPE matching between exposure tools through laser bandwidth tuning
Author(s): Kazuyuki Yoshimochi; Takao Tamura; Seiji Nagahara; Takayuki Uchiyama; Nigel Farrar; Toshihiro Oga; James Bonafede
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Fluoride single crystals for the next generation lithography
Author(s): Teruhiko Nawata; Yoji Inui; Toshiro Mabuchi; Naoto Mochizuki; Isao Masada; Eiichi Nishijima; Hiroki Sato; Tsuguo Fukuda
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An improved process for manufacturing diffractive optical elements (DOEs) for off-axis illumination systems
Author(s): Jerry Leonard; James Carriere; Jared Stack; Rich Jones; Marc Himel; John Childers; Kevin Welch
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A novel photo-thermal setup for determination of absorptance losses and wavefront deformations in DUV optics
Author(s): K. Mann; A. Bayer; U. Leinhos; T. Miege; B. Schäfer
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Performance demonstration of significant availability improvement in lithography light sources using GLX control system
Author(s): Kevin O'Brien; Wayne J. Dunstan; Daniel Riggs; Aravind Ratnam; Robert Jacques; Herve Besaucele; Daniel Brown; Kevin Zhang; Nigel Farrar
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Impact of optimization conditions on the result at optimizing illumination and mask
Author(s): Koichiro Tsujita; Koji Mikami; Hiroyuki Ishii; Akiyoshi Suzuki
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Understanding and application of constructive, destructive SRAF
Author(s): Fook L. Chin; Todd P. Lukanc
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90nm node contact hole patterning through applying model based OPC in KrF lithography
Author(s): Young-Doo Jeon; Sang-Uk Lee; Jaeyoung Choi; Jeahee Kim; Jaewon Han
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Manufacturing implementation of 32nm SRAM using ArF immersion with RET
Author(s): Sho-Shen Lee; Cheng-Han Wu; Yongfa Huang; Chien-Hui Huang; Hung-Chin Huang; George KC Huang; Chun-Chi Yu; Michael Hsu; Simon Shieh; Stephen Hsu; T. B. Chiao
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Random 65nm..45nm C/H printing using optimized illumination source and CD sizing by post processing
Author(s): Jo Finders; Eddy Van der Heijden; Gert-Jan Janssen; Rik Vangheluwe; Tsuysohi Shibata; Ryouichirou Naitou; Hitoshi Kosugi; Hisanori Sugimachi
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Study of SRAF placement for contact at 45 nm and 32 nm node
Author(s): V. Farys; F. Robert; C. Martinelli; Y. Trouiller; F. Sundermann; C. Gardin; J. Planchot; G. Kerrien; F. Vautrin; M. Saied; E. Yesilada; F. Foussadier; A. Villaret; L. Perraud; B. Vandewalle; J. C. Le Denmat; M. K. Top
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Automated method of detecting SRAF and sidelobe printing with automated CD-SEM recipes
Author(s): Mary Coles; Yong Seok Choi; Kyoungmo Yang; Cindy Parker; Andy Self
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Novel lithography rule check for full-chip side lobe detection
Author(s): T. S. Wu; Elvis Yang; T. H. Yang; K. C. Chen; C. Y. Lu
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Quasi-iso-focal hole pattern formation by Checker-Board PSM (CB-PSM)
Author(s): S. Nakao; S. Maejima; A. Minamide; H. Saitoh; T. Hanawa; K. Suko
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Optimum biasing for 45 nm node chromeless and attenuated phase shift mask
Author(s): Young-Min Kang; Hye-Keun Oh
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Improvement of the common DoF across field for hole-structure process layers
Author(s): Shu Huei Hou; Edgar Huang; Aroma Tseng; Met Yeh; Bill Lin; Chun Chi Yu; Eason Lin
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Customized illumination shapes for 193nm immersion lithography
Author(s): Moh Lung Ling; Gek Soon Chua; Qunying Lin; Cho Jui Tay; Chenggen Quan
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Binary and attenuated PSM mask evaluation for sub 50nm device development perspective
Author(s): James Moon; Byoung-Sub Nam; Joo-Hong Jeong; Dong-Ho Kong; Byung-Ho Nam; Dong Gyu Yim
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Highly reliable detection and correction of pinched areas for high transmission phase shift mask
Author(s): Chih Li Chen; Chun-Cheng Liao; Pin-Jan Chou; Chiang Lin Shih; Steven Shih
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Evaluation of inverse lithography technology for 55nm-node memory device
Author(s): Byung-ug Cho; Sung-woo Ko; Jae-seung Choi; Cheol-Kyun Kim; Hyun-jo Yang; DongGyu Yim; David Kim; Bob Gleason; KiHo Baik; Ying Cui; Thuc Dam; Linyong Pang
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Extension of low k1 lithography processes with KrF for 90nm technology node
Author(s): Sungho Jun; Eunsoo Jeong; Youngje Yun; Kwangseon Choi; Jeahee Kim; Jaewon Han
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60nm half pitch contact layer printing: exploring the limits at 1.35NA lithography
Author(s): Joost Bekaert; Eric Hendrickx; Geert Vandenberghe
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Combined mask and illumination scheme optimization for robust contact patterning on 45nm technology node flash memory devices
Author(s): Alessandro Vaglio Pret; Gianfranco Capetti; Maddalena Bollin; Gina Cotti; Danilo De Simone; Pietro Cantù; Alessandro Vaccaro; Laura Soma
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Consideration of VT5 etch-based OPC modeling
Author(s): ChinTeong Lim; Vlad Temchenko; Dieter Kaiser; Ingo Meusel; Sebastian Schmidt; Jens Schneider; Martin Niehoff
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Optimized OPC approach for process window improvement
Author(s): Ching-Heng Wang; Qingwei Liu; Liguo Zhang
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The comparison of OPC performance and run time for dense versus sparse solutions
Author(s): Amr Abdo; Ian Stobert; Ramya Viswanathan; Ryan Burns; Klaus Herold; Chidam Kallingal; Jason Meiring; James Oberschmidt; Scott Mansfield
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Advanced mask process modeling for 45-nm and 32-nm nodes
Author(s): Edita Tejnil; Yuanfang Hu; Emile Sahouria; Steffen Schulze; Ming Jing Tian; Eric Guo
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An efficient and robust mask model for lithography simulation
Author(s): Zhenhai Zhu; Frank Schmidt
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Reticle CD error calibrated OPC model generation
Author(s): Youngmi Kim; Jae-Young Choi; Jong-Doo Kim; Jeahee Kim; Jae-Won Han
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Modeling of focus blur in the context of optical proximity correction
Author(s): Qiaolin Zhang; Hua Song; Kevin Lucas; James Shiely
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Full chip compensation for local-flare-induced CD error using OPC/DRC method
Author(s): Jae-Young Choi; Yeon-Ah Shim; Kyung-Hee Yun; Jong-Doo Kim; Jae-Hee Kim; Jae-Won Han
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Development of layout split algorithms and printability evaluation for double patterning technology
Author(s): Tsann-Bim Chiou; Robert Socha; Hong Chen; Luoqi Chen; Stephen Hsu; Peter Nikolsky; Anton van Oosten; Alek C. Chen
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Optical proximity correction with principal component regression
Author(s): Peiran Gao; Allan Gu; Avideh Zakhor
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OPC optimization for double dipole lithography and its application on 45nm node with dry exposure
Author(s): Se-Jin Park; Jae-Kyung Seo; ChengHe Li; Daisy Liu; Petros An; Xiao-Hui Kang; Eric Guo
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Novel method for optimizing lithography exposure conditions using full-chip post-OPC simulation
Author(s): John Sturtevant; Srividya Jayaram; Le Hong; Alexandre Drozdov
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Optical proximity correction for elongated contact-hole printing
Author(s): Young-Chang Kim; Sangwook Kim; Sungsoo Suh; Yongjin Cheon; Sukjoo Lee; Junghyeon Lee; Seong-Woon Choi; Woosung Han; Sooryong Lee; Kyoil Koo
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Study of the mask topography effect on the OPC modeling of hole patterns
Author(s): Seong-bo Shim; Young-chang Kim; Suk-joo Lee; Seong-woon Choi; Woo-sung Han
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Evaluation of OPC test patterns using parameter sensitivity
Author(s): Brian S. Ward
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Pellicle effect on OPC modeling
Author(s): Boren Luo; Chi-Kang Chang; W. L. Wang; W. C. Huang; Timothy Wu; C. W. Lai; R. G. Liu; H. T. Lin; K. S. Chen; Y. C. Ku
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OPC model calibration considerations for data variance
Author(s): Mohamed Bahnas; Mohamed Al-Imam
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Pattern centric OPC flow: a special RET flow with fast turn-around-time
Author(s): Tom Wang; Joanne Wu; Qingwei Liu; Gary Zhang; Benny Wang; Bo Su; Guojie Cheng
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Extreme mask corrections: technology and benefits
Author(s): Yuri Granik; Nick Cobb; Dmitry Medvedev
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Variable loading kernels for OPC modeling
Author(s): S. L. Tsai; Fred Lo; Elvis Yang; T. H. Yang; K. C. Chen; C. Y. Lu
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Impact of medium and long range effects on poly gate patterning
Author(s): Manuel Tagliavini; Elisabetta Annoni; Pietro Cantù; Gianfranco Capetti; Chiara Catarisano; Roberto Colombo; Giovanni Magri; Marcello Ravasio; Federica Zanderigo
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Design of automatic controllers for model-based OPC with optimal resist threshold determination for improving correction convergence
Author(s): Yi-Sheng Su; Philip C. W. Ng; Kuen-Yu Tsai; Yung-Yaw Chen
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OPC modeling setup with considering flare effect
Author(s): Jong-doo Kim; Jae-young Choi; Jea-hee Kim; Jae-won Han
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Fitness and runtime correlation of compact model complexity
Author(s): Alexander N. Drozdov; Monica L. Kempsell; Yuri Granik
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AltPSM contact hole application at DRAM 4xnm nodes with dry 193nm lithography
Author(s): Christoph Noelscher; Thomas Henkel; Franck Jauzion-Graverolle; Mario Hennig; Nicolo Morgana; Ralph Schlief; Molela Moukara; Roderick Koehle; Ralf Neubauer
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An approach for nanometer trench and hole formation
Author(s): Zhongyan Wang; Ming Sun; Xilin Peng; Thomas Boonstra
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Multi-patterning overlay control
Author(s): C. P. Ausschnitt; P. Dasari
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Resist bias measured in Iso-focal structure
Author(s): Jianliang Li; Chunqing Wang; Aram Kazarian; Qiliang Yan; Lawrence S. Melvin
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Reflection control in hyper-NA immersion lithography
Author(s): Zhimin Zhu; Emil Piscani; Kevin Edwards; Brian Smith
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Resolution enhancement techniques in 65 nm node nested-hole patterning
Author(s): Hyesung Lee; Jaeyoung Choi; Jeahee Kim; Jaewon Han; Keun-Young Kim
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32nm overlay improvement capabilities
Author(s): Brad Eichelberger; Kevin Huang; Kelly O'Brien; David Tien; Frank Tsai; Anna Minvielle; Lovejeet Singh; Jeffrey Schefske
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22nm half-pitch patterning by CVD spacer self alignment double patterning (SADP)
Author(s): Chris Bencher; Yongmei Chen; Huixiong Dai; Warren Montgomery; Lior Huli
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Reflectivity-induced variation in implant layer lithography
Author(s): Todd C. Bailey; Greg McIntyre; Bidan Zhang; Ryan P. Deschner; Sohan Mehta; Won Song; Hyung-Rae Lee; Yu Hue; MaryJane Brodsky
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Investigation of mechanism of pattern deformation on TiN substrate and O2 plasma effect without BARC
Author(s): Juhyoung Moon; Young-Je Yun; Taek-seung Yang; Kwangseon Choi; Jeahee Kim; Jaewon Han
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Rigorous modeling and analysis of impact produced by microstructures in mask on wafer pattern fidelity
Author(s): Irina Pundaleva; Roman Chalykh; MyoungSoo Lee; HeeBom Kim; ByungGook Kim; HanKu Cho
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The flash memory battle: How low can we go?
Author(s): Eelco van Setten; Onno Wismans; Kees Grim; Jo Finders; Mircea Dusa; Robert Birkner; Rigo Richter; Thomas Scherübl
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Measuring layer-specific depth-of-focus requirements
Author(s): Bernhard Liegl; Allen Gabor; Colin Brodsky; John Cotte; Mahadevaiyer Krishnan
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Effects of laser bandwidth on tool to tool CD matching
Author(s): Bo-Yun Hsueh; Hung-Yi Wu; Louis Jang; Met Yeh; Chen-Chin Yang; George K.C. Huang; Chun-Chi Yu; Allen Chang
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Improving lithography intra wafer CD for C045 implant layers using STI thickness feed forward?
Author(s): Jean Massin; Bastien Orlando; Maxime Gatefait; Jean-Damien Chapon; Bertrand Le-Gratiet; Blandine Minghetti; Pierre-Jérôme Goirand
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More on practical solutions to eliminate reticle haze and extend reticle life in the production environment: specially designed RSPs, internal POD purifiers, and XCDA purged reticle stockers
Author(s): William Goodwin; Matt Welch; Bruce Laquidara; Oleg Kishkovich; A. Habecker
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Monitoring defects at wafer’s edge for improved immersion lithography performance
Author(s): Chris Robinson; Jeff Bright; Dan Corliss; Mike Guse; Bob Lang; George Mack
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Modeling the work piece charging during e-beam lithography
Author(s): Benjamin Alles; Eric Cotte; Bernd Simeon; Timo Wandel
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SEM-contour based mask modeling
Author(s): Jim Vasek; Edita Tejnil; Ir Kusnadi; Ofer Lindman; Ovadya Menadeva; Ram Peltinov
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Integration of high-speed surface-channel charge coupled devices into an SOI CMOS process using strong phase shift lithography
Author(s): Jeffrey Knecht; Vladimir Bolkhovsky; Jay Sage; Brian Tyrrell; Bruce Wheeler; Charles Wynn
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32 nm 1:1 line and space patterning by resist reflow process
Author(s): Joon-Min Park; Heejun Jeong; Ilsin An; Hye-Keun Oh
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Optimum dose variation caused by post exposure bake temperature difference inside photoresist over different sublayers and thickness
Author(s): Young-Min Kang; Ilsin An; Do Wan Kim; Hye-Keun Oh
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The analysis of optical lithography at 2-dimensional dense structure
Author(s): Chanha Park; Tae-Seung Eom; Hyejin Shin; Kiho Yang; Jinyoung Choi; Jinsoo Kim; Hyeongsoo Kim; Donggyu Yim; Jinwoong Kim
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Image contrast contributions to immersion lithography defect formation and process yield
Author(s): Ben Rathsack; Josh Hooge; Steven Scheer; Kathleen Nafus; Shinichi Hatakeyama; Hontake Kouichi; Junichi Kitano; Dieter Van Den Heuval; Philippe Leray; Eric Hendrickx; Phillipe Foubert; Roel Gronheid
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Demonstration of production readiness of an immersion lithography cell
Author(s): Alberto Beccalli; Paolo Canestrari; Mark Goeke; Masashi Kanaoka; Helmut Kandraschow; Takuya Kuroda; Danilo De Simone; Paolo Piacentini; Miriam Padovani; Paolo Piazza; Alessandro Rossi
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High-speed microlithography aerial image simulation without four-dimensional singular-value decomposition
Author(s): Charlie Chung-Ping Chen
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Coupled eigenmode theory applied to thick mask modeling of TM polarized imaging
Author(s): Gary Allen; Paul Davids
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A rigorous finite-element domain decomposition method for electromagnetic near field simulations
Author(s): Lin Zschiedrich; Sven Burger; Achim Schädle; Frank Schmidt
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Influence of pellicle on hyper-NA imaging
Author(s): Kazuya Sato; Satoshi Nagai; Nakagawa Shinichiro; Takashi Sato; Masamitsu Itoh
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Rigorous electromagnetic field simulation of two-beam interference exposures for the exploration of double patterning and double exposure scenarios
Author(s): Andreas Erdmann; Peter Evanschitzky; Tim Fühner; Thomas Schnattinger; Cheng-Bai Xu; Chuck Szmanda
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A simulation study on the impact of lithographic process variations on CMOS device performance
Author(s): Tim Fühner; Christian Kampen; Ina Kodrasi; Alexander Burenkov; Andreas Erdmann
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Reliable high power injection locked 6 kHz 60W laser for ArF immersion lithography
Author(s): Takahito Kumazaki; Toru Suzuki; Satoshi Tanaka; Ryoichi Nohdomi; Masaya Yoshino; Shinichi Matsumoto; Yasufumi Kawasuji; Hiroshi Umeda; Hitoshi Nagano; Kouji Kakizaki; Hiroaki Nakarai; Takashi Matsunaga; Junichi Fujimoto; Hakaru Mizoguchi
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High-power and high-energy stability injection lock laser light source for double exposure or double patterning ArF immersion lithography
Author(s): Masaya Yoshino; Hiroaki Nakarai; Takeshi Ohta; Hitoshi Nagano; Hiroshi Umeda; Yasufumi Kawasuji; Toru Abe; Ryoichi Nohdomi; Toru Suzuki; Satoshi Tanaka; Yukio Watanabe; Taku Yamazaki; Shinji Nagai; Osamu Wakabayashi; Takashi Matsunaga; Kouji Kakizaki; Junichi Fujimoto; Hakaru Mizoguchi
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32 nm logic patterning options with immersion lithography
Author(s): K. Lai; S. Burns; S. Halle; L. Zhuang; M. Colburn; S. Allen; C. Babcock; Z. Baum; M. Burkhardt; V. Dai; D. Dunn; E. Geiss; H. Haffner; G. Han; P. Lawson; S. Mansfield; J. Meiring; B. Morgenfeld; C. Tabery; Y. Zou; C. Sarma; L. Tsou; W. Yan; H. Zhuang; D. Gil; D. Medeiros
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Uniaxial crystal last optical element for second- and third-generation immersion lithography
Author(s): Gabriel Y. Sirat; Michael Goldstein
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