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Proceedings of SPIE Volume 6894

Gallium Nitride Materials and Devices III
Editor(s): Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Euijoon Yoon
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Volume Details

Volume Number: 6894
Date Published: 7 March 2008
Softcover: 51 papers (438) pages
ISBN: 9780819470690

Table of Contents
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Front Matter: Volume 6894
Author(s): Proceedings of SPIE
The role of anisotropy for defect properties in a-plane GaN
Author(s): R. Kröger; T. Paskova
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A thick GaN growth using GaN/Si(111) template by hydride vapor phase epitaxy(HVPE)
Author(s): Doo Soo Kim; Ho Jun Lee; Yong Jin Kim; Su Kim Jung; Dong Kun Lee; Bo Young Lee
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Modeling and experimental analysis of RPCVD based nitride film growth
Author(s): C. Martin; K. S. A. Butcher; M. Wintrebert-Fouquet; A. Fernandes; T. Dabbs; P. P.-T. Chen; R. Carmen
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Epitaxial lateral overgrowth of GaN on AlGaN/(111)Si micropillar array fabricated by polystyrene microsphere lithography
Author(s): Guan-Ting Chen; Chia-Hua Chan; Chia-Hung Hou; Hsueh-Hsing Liu; Nai-Wei Shiu; Mao-Nan Chang; Chii-Chang Chen; Jen-Inn Chyi
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Nanopatterning and selective area epitaxy of GaN on Si substrate
Author(s): L. S. Wang; S. J. Chua; S. Tripathy; K. Y. Zang; B. Z. Wang; J. H. Teng
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Investigation of charge trapping at the oxide/semiconductor interface for MBE-grown GaN films
Author(s): J. C. Moore; M. A. Reshchikov; J. E. Ortiz; J. Xie; H. Morkoç; A. A. Baski
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Defect and emission distributions in bulk GaN grown in polar and nonpolar directions: a comparative analysis
Author(s): T. Paskova; A. Hanser; E. Preble; K. Evans; R. Kröger; F. Tuomisto; R. Kersting; R. Alcorn; S. Ashley; C. Pagel; E. Valcheva; P. P. Paskov; B. Monemar
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Photoluminescence study of near-surface GaN/AlN superlattices
Author(s): P. P. Paskov; B. Monemar; T. Paskova; S. Kamiyama; H. Amano; I. Akasaki
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Dynamics of intervalley transitions and propagation of coherent acoustic phonons in GaN single crystals studied by femtosecond pump-probe spectroscopy
Author(s): Shuai Wu; Jie Zhang; A. Belousov; J. Karpinski; Roman Sobolewski
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Band coupling model of electron and hole mediated ferromagnetism in semiconductors: the case of GaN
Author(s): Su-Huai Wei; Gustavo M. Dalpian
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Spin-orbit coupling in AlGaN/AlN/GaN heterostructures with a polarization induced two-dimensional electron gas
Author(s): Ç. Kurdak; H. Cheng; N. Biyikli; Ü. Özgür; H. Morkoç; V. I. Litvinov
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Structural defects and degradation of high-power pure-blue GaN-based laser diodes
Author(s): Shigetaka Tomiya; Osamu Goto; Masao Ikeda
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Degradation modes of high-power InGaN/GaN laser diodes on low-defect GaN substrates
Author(s): C. C. Kim; Y. Choi; Y. H. Jang; M. K. Kang; Minho Joo; M. S. Noh
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16 nm tuning range of blue InGaN laser diodes achieved by 200 K temperature increase
Author(s): K. Komorowska; P. Wisniewski; R. Czernecki; P. Prystawko; M. Leszczynski; T. Suski; I. Grzegory; S. Porowski; S. Grzanka; T. Swietlik; L. Marona; T. Stacewicz; P. Perlin
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Why InGaN laser-diode degradation is accompanied by the improvement of its thermal stability
Author(s): L. Marona; P. Wiśniewski; M. Leszczyński; I. Grzegory; T. Suski; S. Porowski; R. Czernecki; A. Czerwinski; M. Pluska; J. Ratajczak; P. Perlin
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AlN/GaN-superlattice structures for the fabrication of intersubband detectors in the telecom wavelength range
Author(s): Daniel Hofstetter; Esther Baumann; Fabrizio R. Giorgetta; Manfred Maier; Fabien Guillot; Edith Bellet-Amalric; Eva Monroy
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Optimization of semipolar GaInN/GaN blue/green light emitting diode structures on {1-101} GaN side facets
Author(s): T. Wunderer; J. Hertkorn; F. Lipski; P. Brückner; M. Feneberg; M. Schirra; K. Thonke; I. Knoke; E. Meissner; A. Chuvilin; U. Kaiser; F. Scholz
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RGB LED with smart control in the backlight and lighting
Author(s): Johnson C. S. Ku; C. J. Lee
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Highly reliable and bright GaN vertical LED on metal alloy substrate using corrugated pyramid shaped surface technology
Author(s): Jiunn-Yi Chu; Chen-Fu Chu; Chao-Chen Cheng; Wen-Huan Liu; Hao-Chun Cheng; Feng-Hsu Fan; Jui-Kang Yen; Chuong Anh Tran; Trung Doan
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High-power GaN LED chip with low thermal resistance
Author(s): Schang-jing Hon; Cheng Ta Kuo; T. P. Chen; M. H. Hsieh
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On chip surge protection for GaN-power LEDs by ZnO thin film varistor
Author(s): Liann-Be Chang; Yuan-Hsiao Chang; Yuan-Shun Chang; Ming-Jer Jeng
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Recent status of white LEDs and nitride LDs
Author(s): Takashi Miyoshi; Tomoya Yanamoto; Tokuya Kozaki; Shin-ichi Nagahama; Yukio Narukawa; Masahiko Sano; Takao Yamada; Takashi Mukai
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True-blue InGaN laser for pico size projectors
Author(s): U. Strauβ; S. Brüninghoff; M. Schillgalies; C. Vierheilig; N. Gmeinwieser; V. Kümmler; G. Brüderl; S. Lutgen; A. Avramescu; D. Queren; D. Dini; C. Eichler; A. Lell; U. T. Schwarz
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Investigation of cross-sectional potential distribution in GaN-based field effect transistors by Kelvin probe force microscopy
Author(s): M. Kaneko; A. Hinoki; A. Suzuki; T. Araki; Y. Nanishi
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III-nitride based deep ultraviolet light sources
Author(s): M. S. Shur; R. Gaska
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AZO films with Al nano-particles to improve the light extraction efficiency of GaN-based light-emitting diodes
Author(s): Ying-Hung Chou; Jheng-Tai Yan; Hsin-Ying Lee; Ching-Ting Lee
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InGaN MQW green LEDs using p-InGaN and p-InGaN/p-GaN superlattices as p-type layers
Author(s): Russell D. Dupuis; Jae B. Limb; Jianping Liu; Jae-Hyun Ryou; Clarissa Horne; Dongwon Yoo
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Highly efficient InGaN/GaN LEDs with double-sided textured surfaces and omni-directional mirror structure
Author(s): Dong-Sing Wuu; Shao-Hua Huang; Ray-Hua Horng; Chuang-Yu Hsieh; Kuo-Wei Yen
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Development of UV-photocathodes using GaN film on Si substrate
Author(s): S. Fuke; M. Sumiya; T. Nihashi; M. Hagino; M. Matsumoto; Y. Kamo; M. Sato; K. Ohtsuka
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1/f noise in nitride-based spintronic devices
Author(s): Peter H. Handel; Amanda M. Truong
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Reliability modeling of high voltage AlGaN/GaN and GaAs field-effect transistors
Author(s): R. J. Trew; Y. Liu; W. Kuang; G. L. Bilbro
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Progress in GaN devices performances and reliability
Author(s): P. Saunier; C. Lee; J. Jimenez; A. Balistreri; D. Dumka; H. Q. Tserng; M. Y. Kao; U. Chowdhury; P. C. Chao; K. Chu; A. Souzis; I. Eliashevich; S. Guo; J. del Alamo; J. Joh; M. Shur
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High temperature performance measurement and analysis of GaN HEMTs
Author(s): B. A. Polash; M. A. Huque; S. K. Islam; H. Huq
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Use of quantum 1/f noise formulas in the reliability characterization of nitride-based heterostructures
Author(s): Peter H. Handel; Hadis Morkoç; Amanda M. Truong
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Millimeter-wave GaN HFET technology
Author(s): Masataka Higashiwaki; Takashi Mimura; Toshiaki Matsui
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Status of GaN HEMT performance and reliability
Author(s): Daniel S. Green; J. D. Brown; R. Vetury; S. Lee; S. R. Gibb; K. Krishnamurthy; M. J. Poulton; J. Martin; J. B. Shealy
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Piezoelectric quantum 1/f noise in nitride-based heterostructures
Author(s): Peter H. Handel; Hadis Morkoc; Engkee Sia; Amanda M. Truong
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Recent progress of GaN electronic devices for wireless communication system
Author(s): T. Kikkawa; K. Imanishi; N. Hara; H. Shigematsu; K. Joshin
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AlxIn1-xN/GaN heterostructure field effect transistors
Author(s): J. Xie; X. Ni; M. Wu; J. H. Leach; Ü. Özgür; H. Morkoç
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GaN Schottky barrier and metal-semiconductor-metal photodetectors with in situ SiNx nano-network
Author(s): J. Xie; J. Mateo; Ü. Özgür; H. Morkoç
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Comparative study of electroluminescence efficiency of blue (In,Ga)N and red GaAs quantum-well diodes
Author(s): T. Inada; H. Jimi; K. Fujiwara
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Infrared reflectance of optical phonon modes in AlGaN epitaxial layers grown on sapphire substrates
Author(s): Jun-Rong Chen; Tien-Chang Lu; Gen-Sheng Huang; Tsung-Shine Ko; Hao-Chung Kuo; Shing-Chung Wang
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AlGaN/GaN multiple quantum wells grown by atomic layer deposition
Author(s): M. H. Lo; Z. Y. Li; J. R. Chen; T. S. Ko; T. C. Lu; H. C. Kuo; S. C. Wang
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AlGaN/SiC heterojunction bipolar transistor
Author(s): Ya. I. Alivov; Q. Fan; X. Ni; S. Chevtchenko; I. B. Bhat; H. Morkoç
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Epitaxial lateral overgrowth of (11¯00) m-plane GaN on m-plane 6H-SiC by metalorganic chemical vapor deposition
Author(s): X. Ni; Ü. Özgür; S. Chevtchenko; J. Nie; H. Morkoç; R. P. Devaty; W. J. Choyke
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Modification of the anomalous V-shaped and S-shaped temperature dependent photon energy in AlxGa1-xN (0<x&#8804;0.38) nanoheterostructures using a nonbonding laser lift-off (NBLLO) technique
Author(s): Amal Elgawadi; Jerzy Krasinski; Gordon Gainer; Vladimir Dmitriev
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Comparative study of deep levels in GaN grown on different templates
Author(s): J. Nie; S. A. Chevtchenko; J. Xie; X. Ni; H. Morkoç
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Evolution of surface morphology of polar and nonpolar GaN thin films during photoelectrochemical etching
Author(s): J. Leach; Ü. Özgür; X. Ni; J. Xie; H. Morkoç
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Comparison of various gate dielectrics on the performance of AlGaN/GaN HFETS
Author(s): Qian Fan; Jacob H. Leach; Mo Wu; Bo Xiao; Xing Gu; Hadis Morkoç; Peter H. Handel
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Optical properties of polar, nonpolar, and semipolar InGaN/GaN multiple quantum wells on sapphire
Author(s): X. Ni; R. Shimada; J. H. Leach; J. Xie; Ü. Özgür; H. Morkoç
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Characterization of low-cost organic phosphor for white light-emitting diode
Author(s): Fuh-Shyang Juang; Ming-Hua Chang; Mark O. Liu; Wen-Ray Chen
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