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Proceedings of SPIE Volume 6730

Photomask Technology 2007
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Volume Details

Volume Number: 6730
Date Published: 2 October 2007
Softcover: 185 papers (1906) pages
ISBN: 9780819468871

Table of Contents
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Front Matter: Volume 6730
Author(s): Proceedings of SPIE
Mask Industry Assessment: 2007
Author(s): Gilbert Shelden; Patricia Marmillion; Greg Hughes
Show Abstract
Compensating for image placement errors induced during the fabrication and chucking of EUVL masks
Author(s): Roxann L. Engelstad; Jaewoong Sohn; Andrew R. Mikkelson; Madhura Nataraju; Kevin T. Turner
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PMJ 2007 panel discussion overview: double exposure and double patterning for 32-nm half-pitch design node
Author(s): Yoshinori Nagaoka; Hidehiro Watanabe
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Characterizing photomask etch processes by phase component analysis (PCA)
Author(s): Richard Wistrom; Toru Komizo; Michael Hibbs; Gary Reid
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The advanced mask CD MTT control using dry etch process for sub 65 nm tech
Author(s): Sang Jin Jo; Ho Yong Jung; Dong Wook Lee; Jae Cheon Shin; Jea Young Jun; Tae Joong Ha; Oscar Han
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CD bias control with in-situ plasma treatment in EPSM photomask etch
Author(s): Karmen Yung; Chang-Ju Choi; Ki-Ho Baik
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Effects of exposure environment on pellicle degradation in ArF lithography
Author(s): Hyungseok Choi; Yohan Ahn; Jeongin Yoon; Yangkoo Lee; Yongjhin Cho; Jongann Kim
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Development and characterization of a new low stress molybdenum silicide film for 45 nm attenuated phase-shift mask manufacturing
Author(s): Thomas Faure; Emily E. Gallagher; Louis Kindt; Steven Nash; Ken Racette; Richard Wistrom; Toru Komizo; Yasutaka Kikuchi; Satoru Nemoto; Yushin Sasaki; Atsushi Kominato; Toshiyuki Suzuki
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Evaluation of the effect of mask-blank flatness on CDU and DOF in high-NA systems
Author(s): Christopher Lee; Chia Wen Chang; Tomas Chin; Richard Lu; Steven Fan; Derek Chen; Gordon Chan; Torey Huang
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The development of full field high resolution imprint templates
Author(s): Shusuke Yoshitake; Hitoshi Sunaoshi; Kenichi Yasui; Hideo Kobayashi; Takashi Sato; Osamu Nagarekawa; Ecron Thompson; Gerard Schmid; Douglas J. Resnick
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Defect reduction progress in step and flash imprint lithography
Author(s): K. Selenidis; J. Maltabes; I. McMackin; J. Perez; W. Martin; D. J. Resnick; S. V. Sreenivasan
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Fabrication of nano-imprint templates for dual-Damascene applications using a high resolution variable shape E-beam writer
Author(s): Marcus Pritschow; Joerg Butschke; Mathias Irmscher; Holger Sailer; Douglas Resnick; Ecron Thompson
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The study of CD error in mid-local pattern area caused by develop loading effect
Author(s): Man-Kyu Kang; Jung-Hun Lee; Seong-Yoon Kim; Byung-Gook Kim; Sang-Gyun Woo; Han-Ku Cho
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Performance improvement of ALTA4700 for 130nm and below mask productivity
Author(s): Jyh Wei Hsu; David Lee; Chen Rui Tseng; Eric Hong; Chun Hung Wu
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The behavior of substrate dependency as surface treatment in the positive chemically amplified resist
Author(s): Sin-Ju Yang; Han-Sun Cha; Ju-Hyun Kang; Chul-Kyu Yang; Jin-Ho Ahn; Kee-Soo Nam
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Design for CD correction strategy using a resist shrink method via UV irradiation for defect-free photomask
Author(s): Jin Ho Ryu; Dong Wook Lee; Ho Yong Jung; Sang Pyo Kim; Oscar Han
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The impact of mask photoresist develop on critical dimension parameters
Author(s): Adam C. Smith; Daniel B. Sullivan; Kazuhiko Sugawara; Yusuke Okawa
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New method of contour-based mask-shape compiler
Author(s): Ryoichi Matsuoka; Akiyuki Sugiyama; Akira Onizawa; Hidetoshi Sato; Yasutaka Toyoda
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Development of mask-DFM system "MiLE" load estimation of mask manufacturing
Author(s): Yoshikazu Nagamura; Kunihiro Hosono; Shogo Narukawa; Hiroshi Mohri; Naoya Hayashi; Masahiro Kato; Hidemichi Kawase
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DFM for maskmaking: design-aware flexible mask-defect analysis
Author(s): Frank A. J. M. Driessen; J. Westra; M. Scheffer; K. Kawakami; E. Tsujimoto; M. Yamaji; T. Kawashima; N. Hayashi
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Use of layout automation and design-based metrology for defect test mask design and verification
Author(s): Chris Spence; Cyrus Tabery; Andre Poock; Arndt C. Duerr; Thomas Witte; Jan Fiebig; Jan Heumann
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Intel's AMT enables rapid processing and info-turn for Intel's DFM test chip vehicle
Author(s): Hazem Hajj
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From rule to model-based design: A need for DfP criteria?
Author(s): A. Balasinski; N. Kachwala; D. Abercrombie
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Accurate lithography analysis for yield prediction
Author(s): Greg Yeric; Babak Hatamian; Rahul Kapoor
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Production-worthy full chip image-based verification
Author(s): Zongchang Yu; Youping Zhang; Yanjun Xiao; Wanyu Li
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Layout verification in the era of process uncertainty: requirements for speed, accuracy, and process portability
Author(s): J. Andres Torres; Ioana Graur; Mark C. Simmons; Suniti Kanodia
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Selecting and using a lithography compliance DFM tool for 65-nm foundry production
Author(s): Babak Hatamian; Rahul Kapoor
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Litho-aware extraction for the 32nm double patterning node
Author(s): Judy Huckabay; Quentin Chen; Craig Thayer; Robert Naber
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Silicon-verified automatic DFM layout optimization: a calibration-lite model-based application to standard cells
Author(s): Kuang-Kuo Lin; Ban P. Wong; Frank A. J. M. Driessen; Etsuya Morita; Simon Klaver
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Non-uniform yield optimization for integrated circuit layout
Author(s): Fedor G. Pikus; J. Andres Torres
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A lithography aware design optimization using foundry-certified models and hotspot detection
Author(s): L. Karklin; A. Arkhipov; D. Blakely; M. Dingenen; A. Mehrotra; B. Watson; C. Zelnik; M. Cote; P. Hurat
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Investigation of mask defectivity in full field EUV lithography
Author(s): Rik Jonckheere; Fumio Iwamoto; G. F. Lorusso; A. M. Goethals; K. Ronse; H. Koop; T. Schmoeller
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Detectability and printability of EUVL mask blank defects for the 32-nm HP node
Author(s): Wonil Cho; Hak-Seung Han; Kenneth A Goldberg; Patrick A Kearney; Chan-Uk Jeon
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Measuring and characterizing the nonflatness of EUVL reticles and electrostatic chucks
Author(s): Roxann L. Engelstad; Kevin T. Turner; Madhura Nataraju; Jaewoong Sohn; Andrew R. Mikkelson; Venkata Siva Battula; Pradeep Vukkadala; Jacob R. Zeuske; Chris K. Van Peski
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Recent performance of EUV mask blanks with low-thermal expansion glass substrates
Author(s): Tsutomu Shoki; Takeyuki Yamada; Shouji Shimojima; Yuuki Shiota; Mitsuharu Tsukahara; Kesahiro Koike; Hiroaki Shishido; Osamu Nozawa; Toshiyuki Sakamoto; Morio Hosoya
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Investigation of resist effects on EUV mask defect printability
Author(s): Zhiyu Zhang; Ted Liang
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Impact of mask absorber properties on printability in EUV lithography
Author(s): Takashi Kamo; Hajime Aoyama; Toshihiko Tanaka; Osamu Suga
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A study of haze generation as thin film materials
Author(s): Ju-Hyun Kang; Han-Sun Cha; Sin-Ju Yang; Chul-Kyu Yang; Jin-Ho Ahn; Kee-Soo Nam; Jong-Min Kim; Manish Patil; Ik-Bum Hur; Sang-Soo Choi
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Compositional analysis of progressive defects on a photomask
Author(s): Koichiro Saga; Hiroichi Kawahira
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A practical solution to the critical problem of 193 nm reticle haze
Author(s): Oleg Kishkovich; Dave Halbmaier; Xavier Gabarre; Brian Grenon; James Lo; Andy Lam; Tom Chen
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Rapid and precise monitor of reticle haze
Author(s): Terrence Zavecz; Bryan Kasprowicz
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Investigation of airborne molecular contamination adsorption rate as storage materials in mask
Author(s): Chul-Kyu Yang; Han-Sun Cha; Sin-Ju Yang; Ju-Hyun Kang; Jin-Ho Ahn; Kee-Soo Nam
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Study of time dependent 193 nm reticle haze
Author(s): Joseph Gordon; Larry Frisa; Christian Chovino; David Chan; John Keagy; Colleen Weins
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Full sulfate-free process: joint achievement of minimal residual ions and yield improvement
Author(s): Francesca Perissinotti; Luca Sartelli; Davide Cassago; Hiroyuki Miyashita
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Using the AIMS 45-193i for hyper-NA imaging applications
Author(s): Peter De Bisschop; Vicky Philipsen; Robert Birkner; Ute Buttgereit; Rigo Richter; Thomas Scherübl
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Mask characterization for double patterning lithography
Author(s): Karsten Bubke; Eric Cotte; Jan Hendrik Peters; Robert de Kruif; Mircea Dusa; Joerg Fochler; Brid Connolly
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DPL performance analysis strategy with conventional workflow
Author(s): Nobuhito Toyama; Yuichi Inazuki; Takanori Sutou; Takaharu Nagai; Yasutaka Morikawa; Hiroshi Mohri; Naoya Hayashi; Junji Miyazaki; Alek Chen; Nandasiri Samarakone
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Estimating DPL photomask fabrication load compared with single exposure
Author(s): Nobuhito Toyama; Yuichi Inazuki; Takanori Sutou; Takaharu Nagai; Yasutaka Morikawa; Hiroshi Mohri; Naoya Hayashi; Judy A. Huckabay; Yoshikuni Abe
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The MEEF NILS divergence for low k1 lithography
Author(s): Richard Schenker; Wen-hao Cheng; Gary Allen
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Impact of alternative mask stacks on the imaging performance at NA 1.20 and above
Author(s): Vicky Philipsen; Kei Mesuda; Peter De Bisschop; Andreas Erdmann; Giuseppe Citarella; Peter Evanschitzky; Robert Birkner; Rigo Richter; Thomas Scherübl
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Requirements of photomask registration for the 45nm node and beyond: Is it possible?
Author(s): Jin Choi; Hee Bom Kim; Sang Hee Lee; Dong Hun Lee; Hae Young Jeong; Jeung Woo Lee; Byung Gook Kim; Sang-Gyun Woo; Han Ku Cho
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Simulation of larger mask areas using the waveguide method with fast decomposition technique
Author(s): Peter Evanschitzky; Feng Shao; Andreas Erdmann; David Reibold
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Polarization aberration modeling via Jones matrix in the context of OPC
Author(s): Qiaolin Zhang; Hua Song; Kevin Lucas
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Validation of a fast and accurate 3D mask model for SRAF printability analysis at 32nm node
Author(s): Peng Liu; Christian Zuniga; Zhongtuan Ma; Hanying Feng
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Fast three-dimensional simulation of buried EUV mask defect interaction with absorber features
Author(s): Chris H. Clifford; Andrew R. Neureuther
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Polarization-induced astigmatism caused by topographic masks
Author(s): Johannes Ruoff; Jens Timo Neumann; Emil Schmitt-Weaver; Eelco van Setten; Nicolas le Masson; Chris Progler; Bernd Geh
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Characterization and monitoring of photomask edge effects
Author(s): Marshal A. Miller; Andrew R. Neureuther; Daniel P. Ceperley; Juliet Rubinstein
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Fast and accurate laser bandwidth modeling of optical proximity effects
Author(s): Ivan Lalovic; Oleg Kritsun; Joeseph Bendik; Mark Smith; Chris Sallee; Nigel Farrar
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Advanced mask particle cleaning solutions
Author(s): Tod Robinson; Andrew Dinsdale; Ron Bozak; Bernie Arruza
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Integrated photomask defect printability check, mask repair, and repair validation procedure for phase-shifting masks for the 45-nm node and beyond
Author(s): Christian Ehrlich; Ute Buttgereit; Klaus Boehm; Thomas Scheruebl; Klaus Edinger; Tristan Bret
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A semi-automated AFM photomask repair process for manufacturing application using SPR6300
Author(s): Mario Dellagiovanna; Hidenori Yoshioka; Hiroyuki Miyashita; Shiaki Murai; Takuya Nakaue; Osamu Takaoka; Atsushi Uemoto; Syuichi Kikuchi; Ryoji Hagiwara; Stephane Benard
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Repairing 45 nm node defects through nano-machining
Author(s): Roy White; Andrew Dinsdale; Tod Robinson; David Brinkley; Jeffrey Csuy; David Lee
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The cleaning effects of mask aerial image after FIB repair in sub-80nm node
Author(s): Hyemi Lee; Goomin Jeong; Sookyeong Jeong; Sangchul Kim; Oscar Han
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Wafer inspection as alternative approach to mask defect qualification
Author(s): Christian Holfeld; Frank Katzwinkel; Uwe Seifert; Andreas Mothes; Jan Hendrik Peters
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A pragmatic approach to high sensitivity defect inspection in the presence of mask process variability
Author(s): Sang Hoon Han; Jin Hyung Park; Dong Hoon Chung; Sang-Gyun Woo; Han Ku Cho; David Kim; Chunlin Chen; Ki-Hun Park; Gregg Inderhees
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Sensitivity comparison of fast integrated die-to-die T+R pattern inspection, standard database inspection, and STARlight2 contamination mode for application in mask production
Author(s): Heiko Schmalfuss; Thomas Schulmeyer; Jan Heumann; Michael Lang; Jean-Paul Sier
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Optimizing defect inspection strategy through the use of design-aware database control layers
Author(s): Dvori Stoler; Wayne Ruch; Weimin Ma; Swapnajit Chakravarty; Steven Liu; Ray Morgan; John Valadez; Bill Moore; John Burns
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Progressive growth and hard defect disposition integrated system for 65nm and 45nm ArF immersion lithography
Author(s): Gek Soon Chua; Sia Kim Tan; Byoung Il Choi; Oi Yin Lee; Jeong Soo Kim
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Characterizing contamination inspection capabilities using programmed defect test reticles
Author(s): Anthony Nhiev; John Riddick; Joseph Straub; Trent Hutchinson; Bryan Reese; Aditya Dayal
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Mask inspection method for 45nm node device
Author(s): Sunghyun Oh; Yongkyoo Choi; Daeho Hwang; Goomin Jeong; Oscar Han
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Inspection results for 32nm logic and sub-50nm half-pitch memory reticles using the TeraScanHR
Author(s): Jean-Paul Sier; William Broadbent; Farzin Mirzaagha; Paul Yu
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Automatic optimization of MEEF-driven defect disposition for contamination inspection challenges
Author(s): Tracy Huang; Aditya Dayal; Kaustuve Bhattacharyya; Joe Huang; William Chou; Yung-Feng Cheng; Shih-Ming Yen; James Cheng; Peter Peng
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Paving the way to a full chip gate level double patterning application
Author(s): Henning Haffner; Jason Meiring; Zachary Baum; Scott Halle
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Automatic assist feature placement optimization based on process-variability reduction
Author(s): Srividya Jayaram; Ayman Yehia; Mohamed Bahnas; Hesham A. Maaty Omar; Zeki Bozkus; John L. Sturtevant
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Full-chip-based subresolution assist features correction for mask manufacturing
Author(s): Ju-Mi Bang; Issei Masumoto; Min-Kyu Ji; Sung-Hoon Jang; Isao Aburatani; Ji-Hyun Choi; Sang-Gyun Woo; Han-Ku Cho
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Etch proximity correction by integrated model-based retargeting and OPC flow
Author(s): Shumay Shang; Yuri Granik; Martin Niehoff
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Resolution enhancement by aerial image approximation with 2D-TCC
Author(s): Kenji Yamazoe; Yoshiyuki Sekine; Miyoko Kawashima; Manabu Hakko; Tomomi Ono; Tokuyuki Honda
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Exploring the sources of MEEF in contact SRAMs
Author(s): Emily Gallagher; Ian Stobert; Masaru Higuchi; Donald Samuels
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The improvement of OPC accuracy and stability by the model parameters' analysis and optimization
Author(s): No-Young Chung; Woon-Hyuk Choi; Sung-Ho Lee; Sung-Il Kim; Sun-Yong Lee
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Fast synthesis of topographic mask effects based on rigorous solutions
Author(s): Qiliang Yan; Zhijie Deng; James Shiely
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Improving hyper-NA OPC using targeted measurements for model parameter extraction
Author(s): Brian S. Ward
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Selective process aware OPC for memory device
Author(s): Woosuk Shim; Sungsoo Suh; Frank Amoroso; Robert Lugg; Sooryung Lee; Sukjoo Lee; Seok-Hwan Oh; Junghyeon Lee; Tae-Hyuk Ahn; Chang-Jin Kang
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Validating optical proximity correction with models, masks, and wafers
Author(s): Sajan Marokkey; Edward W. Conrad; Emily E. Gallagher; Hidehiro Ikeda; James A. Bruce; Mark Lawliss
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The study of phase-angle and transmission specifications of 6% att-EAPSM for 90nm, 65nm, and 45nm node wafer manufacturing patterning process
Author(s): Gong Chen; Cesar Garza
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Better on wafer performance and mask manufacturability of contacts with no or non-traditional serifs
Author(s): Donald Samuels; Ian Stobert
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Optimization of OPC runtime using efficient optical simulation
Author(s): Mohamed Al-Imam; Walid A. Tawfic
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Full-chip process window aware OPC capability assessment
Author(s): Robert Lugg; Matt StJohn; Yunqiang Zhang; Amy Yang; Paul Van Adrichem
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E-beam direct write is free
Author(s): Lance A. Glasser
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Driving photomask supplier quality through automation
Author(s): Drew Russell; Andrew Espenscheid
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Multi-layer reticle (MLR) strategy application to double-patterning/double-exposure for better overlay error control and mask cost reduction
Author(s): Yasuhisa Yamamoto; Rodney Rigby; Jason Sweis
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Polygon-based compensation of proximity and density effects in photomask processes
Author(s): Kiyoshi Kageyama; Katsuyuki Miyoko; Yoshimitsu Okuda; Gökhan Perçin; Apo Sezginer; Jesus Carrero; Alan Zhu; Anwei Liu
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Improvement of mask CD uniformity for below 45-nm node technology
Author(s): Hojune Lee; Seokjong Bae; Junghoon Park; Dongseok Nam; Byunggook Kim; Sang-Gyun Woo; HanKu Cho
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Correction technique of EBM-6000 prepared for EUV mask writing
Author(s): Shusuke Yoshitake; Hitoshi Sunaoshi; Jun Yashima; Shuichi Tamamushi; Munehiro Ogasawara
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Coping with double-patterning/exposure lithography by EB mask writer EBM-6000
Author(s): Takashi Kamikubo; Rieko Nishimura; Kaoru Tsuruta; Kiyoshi Hattori; Jun Takamatsu; Shusuke Yoshitake; Hiroshi Nozue; Hitoshi Sunaoshi; Shuichi Tamamushi
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Performance comparison of techniques for intra-field CD control improvement
Author(s): Rainer Pforr; Mario Hennig; Jens Reichelt; Guy Ben Zvi; Martin Sczyrba
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Projection maskless patterning (PMLP) for the fabrication of leading-edge complex masks and nano-imprint templates
Author(s): Elmar Platzgummer; Hans Loeschner; Gerhard Gross
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Improving the CD linearity and proximity performance of photomasks written on the Sigma7500-II DUV laser writer through embedded OPC
Author(s): Anders Österberg; Lars Ivansen; Angela Beyerl; Tom Newman; Amanda Bowhill; Emile Sahouria; Steffen Schulze
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Contrast properties of spatial light modulators for microlithography
Author(s): J. Heber; D. Kunze; P. Dürr; D. Rudloff; M. Wagner; P. Björnängen; J. Luberek; U. Berzinsh; T. Sandström; T. Karlin
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Accuracy of mask pattern contour extraction with fine-pixel SEM images
Author(s): Shinji Yamaguchi; Eiji Yamanaka; Hidefumi Mukai; Toshiya Kotani; Hiromitsu Mashita; Masamitsu Itoh
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2D measurement using CD SEM for arbitrarily shaped patterns
Author(s): Hyung-Joo Lee; So-Yoon Bae; Dong-Hoon Chung; Sang-Gyun Woo; HanKu Cho; Jun Matsumoto; Takayuki Nakamura; Dong Il Shin; TaeJun Kim
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Preliminary verifiability of the aerial image measurement tool over photolithography process
Author(s): Hyemi Lee; Goomin Jeong; Sangchul Kim; Oscar Han
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Calibration of contact areas: the influence of corner rounding
Author(s): Jan Richter; Eva-Maria Zerbe; Thomas Marschner
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Measurements of corner rounding in 2D contact holes on phase-shift masks using broadband reflectance and transmittance spectra in conjunction with RCWA
Author(s): Alexander Gray; John C. Lam; Stanley Chen; Jan Richter
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Photomask applications of traceable atomic force microscope dimensional metrology at NIST
Author(s): Ronald Dixson; Ndubuisi G. Orji; James Potzick; Joseph Fu; Richard A. Allen; Michael Cresswell; Stewart Smith; Anthony J. Walton; Andreas Tsiamis
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Laterally resolved off-axis phase measurements on 45-nm node production features using Phame
Author(s): Ute Buttgereit; Sascha Perlitz; Dirk Seidel; Kyung M. Lee; Malahat Tavassoli
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LRC techniques for improved error detection throughout the process window
Author(s): Venson Lee; Sheng-Hua Tsai; Jun Zhu; Lantian Wang; Shu-Mei Yang; Dan White
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Teracomputing for mask data preparation
Author(s): John Nogatch; Hartmut Kirsch; Kamal Mostafa; Glenn Newell; Johnny Yeap
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Mask manufacturability improvement by MRC
Author(s): A. Balasinski; D. Coburn; P. Buck
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Reduction of layout complexity for shorter mask write-time
Author(s): Sean Hannon; Travis Lewis; Scott Goad; Kenneth Jantzen; Jianlin Wang; Hien T. Vu; Emile Sahouria; Steffen Schulze
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New method of identification of false or nuisance defects using defect imaging system DIS-05
Author(s): Hao Zhang; Katsuyuki Takahashi; Hideaki Bando; Yasunobu Kitayama; Akio Sugano; Kenichi Kobayashi
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Improving inspectability with KLA-Tencor TeraScan thin line de-sense
Author(s): Chunlin Chen; David Kim; Ki Hun Park; NamWook Kim; Sang Hoon Han; Jin Hyung Park; Dong Hoon Chung
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Implementation of an efficient defect classification method in photomask mass production
Author(s): Cathy Liu; Crystal Wang; Skin Zhang; Eric Guo; Steven Liu; Eric Haodong Lu; Dongsheng Fan; Den Wang; Weiming Ma
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To improve reticle re-qualification process and reduce reticle re-cleaning frequency using efficient defect classification and defect tracking
Author(s): Eric Haodong Lu; Jim Wang; Raj Badoni; Ellison Chen; Weimin Ma
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Enhancing productivity and sensitivity in mask production via a fast integrated die-to-database T+R inspection
Author(s): Eric Haodong Lu; David Wu; Ellison Chen; Raj Badoni
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Automating defect disposition in fabs and maskshops
Author(s): Peter Fiekowsky; S. Narukawa; T. Kawashima
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Automatic OPC repair flow: optimized implementation of the repair recipe
Author(s): Mohamed Bahnas; Mohamed Al-Imam; James Word
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Database and data analysis strategy for multi-designer testchips
Author(s): Wojtek J. Poppe; Patrick Au; Darshana Jayasuriya; Andrew Neureuther
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Determining OPC target specifications electrically instead of geometrically
Author(s): Qiaolin Charlie Zhang; Paul van Adrichem
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Lateral interactions between standard cells using pattern matching
Author(s): Lynn Tao-Ning Wang; Andrew R. Neureuther
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Application of modified jog-fill DRC rule on LFD OPC flow
Author(s): Young-Mi Kim; Sang-Uk Lee; Jea-Hyun Kang; Jea-Hee Kim; Kee-Ho Kim
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Pellicle dimensions for high NA photomasks
Author(s): Frank Erber; Thomas Schulmeyer; Christian Holfeld
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Evaluation of attenuated PSM photomask blanks with TF11 chrome and FEP-171 resist on a 248 nm DUV laser pattern generator
Author(s): Kezhao Xing; Charles Björnborg; Henrik Karlsson; Adisa Paulsson; Anna Rosendahl; Peter Beiming; Jukka Vedenpää; Jonathan Walford; Tom Newman
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Bimetallic thermal resists potential for double-exposure immersion lithography and grayscale photomasks
Author(s): James M. Dykes; Calin Plesa; Chinheng Choo; Glenn H. Chapman
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Acid diffusion length limitation for 45 nm node attenuated and chromeless phase shift mask
Author(s): Young-Min Kang; Seung-Wook Park; Hye-Keun Oh
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Critical dimension control for 32 nm random contact hole array with resist reflow process
Author(s): Joon-Min Park; Young-Min Kang; Seung-Wook Park; Joo-Yoo Hong; Hye-Keun Oh
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Self-aligned resist patterning with 172nm and 193nm backside flood exposure on attenuated phase shift masks
Author(s): Jun Chun; Taejoong Ha; Hoyong Jung; Sangjin Jo; Oscar Han
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Practical use of hard mask process to fabricate fine photomasks for 45nm node and beyond
Author(s): Yasuyuki Kushida; Hitoshi Handa; Hiroshi Maruyama; Yuuki Abe; Yukihiro Fujimura; Toshifumi Yokoyama
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Resistless mask structuring using an ion multi-beam projection pattern generator
Author(s): Joerg Butschke; Mathias Irmscher; Florian Letzkus; Hans Loeschner; Lorenz Nedelmann; Elmar Platzgummer
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Reconfigurable lithographic applications using polymer liquid crystal composite films
Author(s): Anna E. Fox; Adam K. Fontecchio
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Pattern density and process related CD corrections at 32nm node
Author(s): Zdenek Benes; Jun Kotani
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Pattern split rules! A feasibility study of rule based pitch decomposition for double patterning
Author(s): Anton van Oosten; Peter Nikolsky; Judy Huckabay; Ronald Goossens; Robert Naber
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Automatic residue removal for high-NA extreme illumination
Author(s): James Moon; Byong-Sub Nam; Joo-Hong Jeong; Dong-Ho Kong; Byung-Ho Nam; Dong Gyu Yim
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Effective area partitioning for preparing parallel processing in mask data preparation
Author(s): Yoshiyuki Satou; Yasushi Okamoto; Manabu Fujimoto; Hiroshi Tsuchida; Akiko Satou
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Compressing MEBES data enabling multi-threaded decompression
Author(s): Mark Pereira; Anil Parchuri
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Mask calibration dominated methodology for OPC matching
Author(s): Liang Zhu; Mark Lu; Dion King; Yili Gu; Steve Yang; Lawrence S. Melvin
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Integration of OPC and mask data preparation for reduced data I/O and reduced cycle time
Author(s): Ray Morgan; Manoj Chacko; Dan Hung; Johnny Yeap; Mathias Boman
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Mask rule check using priority information of mask patterns
Author(s): Kokoro Kato; Yoshiyuki Taniguchi; Kuninori Nishizawa; Masakazu Endo; Tadao Inoue; Ryouji Hagiwara; Anto Yasaka
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Improving the efficiency of pattern extraction for character projection lithography using OPC optimization
Author(s): Hirokazu Nosato; Tetsuaki Matsunawa; Hidenori Sakanashi; Masahiro Murakawa; Tetsuya Higuchi
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A user-programmable link between data preparation and mask manufacturing equipment
Author(s): Weidong Zhang; Grant Davis; Emile Sahouria; Steffen Schulze; Mohammed Saad; Arne Seyfarth; Eric Poortinga
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32nm half pitch node OPC process model development for three dimensional mask effects using rigorous simulation
Author(s): Lawrence S. Melvin; Thomas Schmoeller; Jianliang Li
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OPC verification on cell level using fully rigorous mask topography simulation
Author(s): Vitaly Domnenko; Thomas Klimpel; Georg Viehoever; Hans Koop; Lawrence S. Melvin; Thomas Schmoeller
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EMF simulations of isolated and periodic 3D photomask patterns
Author(s): Sven Burger; Lin Zschiedrich; Frank Schmidt; Roderick Köhle; Bernd Küchler; Christoph Nölscher
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Capability of eco-friendly cleaning strategy corresponding to advanced technology
Author(s): Sookyeong Jeong; Dongwook Lee; Jisun Ryu; Jinho Ryu; Sangpyo Kim; Oscar Han
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A method to determine the origin of remaining particles after mask blank cleaning
Author(s): Vivek Kapila; Sean Eichenlaub; Abbas Rastegar; Arun John; Pat Marmillion
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Haze generation effect by pellicle and packing box on photomask
Author(s): Jong-Min Kim; Manish Patil; Woo-Gun Jeong; Ik-Boum Hur; Cheol Shin; Sung-Mo Jung; Moon-Hwan Choi; Sang-Soo Choi
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Laser shockwave cleaning of EUV reticles
Author(s): N. A. Lammers; A. Bleeker
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Mask protection from a haze during shipping and storage
Author(s): T. Umeda; H. Kawashima; T. Miho; K. Moriya
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CD-signature evaluation using scatterometry
Author(s): Jan Richter; Phillipp Laube; John Lam
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Parameter sensitive patterns for scatterometry monitoring
Author(s): Jing Xue; Yu Ben; Chaohao Wang; Marshal Miller; Costas J. Spanos; Andrew R. Neureuther
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Long-term critical dimension measurement performance for a new mask CD-SEM, S-9380M
Author(s): Zhigang Wang; Kock Khuen Seet; Ritsuo Fukaya; Yasuhiro Kadowaki; Noriaki Arai; Makoto Ezumi; Hidetoshi Satoh
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Images in photoresist for self-interferometric electrical image monitors
Author(s): Juliet Rubinstein; Andrew R. Neureuther
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The study for close correlation of mask and wafer to optimize wafer field CD uniformity
Author(s): Munsik Kim; Jaesung Kang; Shinchul Kang; Goomin Jeong; Yongkyoo Choi; Oscar Han
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Development of a captured image simulator for the differential interference contrast microscopes aiming to design 199 nm mask inspection tools
Author(s): Masataka Shiratsuchi; Yoshinori Honguh; Ryoichi Hirano; Riki Ogawa; Masatoshi Hirono; Takehiko Nomura
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Improvements in model-based assist feature placement algorithms
Author(s): Benjamin Painter; Levi D. Barnes; Jeffrey P. Mayhew; Yongdong Wang
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An approach of auto-fix post OPC hot spots
Author(s): Ching-Heng Wang; Qingwei Liu; Liguo Zhang
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3D mask modeling with oblique incidence and mask corner rounding effects for the 32nm node
Author(s): Mazen Saied; Franck Foussadier; Jérôme Belledent; Yorick Trouiller; Isabelle Schanen; Emek Yesilada; Christian Gardin; Jean Christophe Urbani; Frank Sundermann; Frédéric Robert; Christophe Couderc; Florent Vautrin; Laurent LeCam; Gurwan Kerrien; Jonathan Planchot; Catherine Martinelli; Bill Wilkinson; Yves Rody; Amandine Borjon; Nicolo Morgana; Jean-Luc Di-Maria; Vincent Farys
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Model-based mask verification
Author(s): Frank Foussadier; Frank Sundermann; Anthony Vacca; Jim Wiley; George Chen; Tadahiro Takigawa; Katsuya Hayano; Syougo Narukawa; Satoshi Kawashima; Hiroshi Mohri; Naoya Hayashi; Hiroyuki Miyashita; Y. Trouiller; F. Robert; F. Vautrin; G. Kerrien; J. Planchot; C. Martinelli; J.L. Di-Maria; Vincent Farys
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Simultaneous model-based main feature and SRAF optimization for 2D SRAF implementation to 32 nm critical layers
Author(s): Ayman Yehia; Alexander Tritchkov
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A generic technique for reducing OPC iteration: fast forward OPC
Author(s): Le Hong; John Sturtevant
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More robust model built using SEM calibration
Author(s): Ching-Heng Wang; Qingwei Liu; Liguo Zhang
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Safe interpolation distance for VT5 resist model
Author(s): Walid Tawfic; Mohamed Al-Imam; George E. Bailey
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The effect of the OPC parameters on the performance of the OPC model
Author(s): Amr Abdo; Ahmed Seoud; Alexander Wei; Ian Stobert; Alan Leslie
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Modeling scanner signatures in the context of OPC
Author(s): Qiaolin Zhang; Jacek K. Tyminski; Kevin Lucas
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Modeling polarized illumination for OPC/RET
Author(s): Hua Song; Qiaolin Zhang; James Shiely
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Fundamental study on the error factor for sub 90nm OPC modeling
Author(s): Hyesung Lee; Sang-Uk Lee; Jeahee Kim; Keeho Kim
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OPC development in action for advanced technology nodes
Author(s): Anthony Chunqing Wang; Masashi Fujimoto; Paul J. M. van Adrichem; Ingo Bork; Hiroshi Yamashita
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Industry survey of wafer fab reticle quality control strategies in the 90nm-45nm design-rule age
Author(s): Russell Dover
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Shuttle fabrication for designs with lifted I/Os
Author(s): Rung-Bin Lin; Meng-Chiou Wu; Shih-Cheng Tsai
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Development status of EUVL mask blanks in AGC
Author(s): Kazuyuki Hayashi
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Performance of actinic EUVL mask imaging using a zoneplate microscope
Author(s): Kenneth A. Goldberg; Patrick P Naulleau; Anton Barty; Senajith B. Rekawa; Charles D. Kemp; Robert F Gunion; Farhad Salmassi; Eric M. Gullikson; Erik H. Anderson; Hak-Seung Han
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The effect of size and shape of sub-50 nm defects on their detectability
Author(s): Abbas Rastegar; Wonil Cho; Eric Gullikson; Sean Eichenlaub
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Techniques to measure force uniformity of electrostatic chucks for EUV mask clamping
Author(s): Sathish Veeraraghavan; Jaewoong Sohn; Kevin T. Turner
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A study of precision performance and scan damage of EUV masks with the LWM9000 SEM
Author(s): Isao Yonekura; Hidemitsu Hakii; Takashi Yoshii; Yoshiyuki Negishi; Katsumi Oohira; Koichirou Kanayama; Masashi Kawashita; Yo Sakata; Keishi Tanaka
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EUV mask substrate flatness improvement by laser irradiation
Author(s): Kiwamu Takehisa; Jun Kodama; Haruhiko Kusunose
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Evaluation of EUVL-mask pattern defect inspection using 199-nm inspection optics
Author(s): Tsuyoshi Amano; Yasushi Nishiyama; Hiroyuki Shigemura; Tsuneo Terasawa; Osamu Suga; Hideaki Hashimoto; Norio Kameya; Shingo Murakami; Nobutaka Kikuiri
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Study of impacts of mask structure on hole pattern in EUVL
Author(s): Nobuyuki Iriki; Yukiyasu Arisawa; Hajime Aoyama; Toshihiko Tanaka
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Repair specification study for half-pitch 32-nm patterns for EUVL
Author(s): Hajime Aoyama; Tsuyoshi Amano; Yasushi Nishiyama; Hiroyuki Shigemura; Osamu Suga
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EUV mask process development using DUV inspection system
Author(s): David Kim; Venu Vellanki; William Huang; Andrew Cao; Chunlin Chen; Aditya Dayal; Paul Yu; Ki Hun Park; Yumiko Maenaka; Kazuko Jochi; Gregg Inderhees
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Development of EUV mask fabrication process using Ru capping blank
Author(s): Tsukasa Abe; Takashi Adachi; Shiho Sasaki; Hiroshi Mohri; Naoya Hayashi; Kosuke Ishikiriyama
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Metrology for templates of UV nano imprint lithography
Author(s): Kouji Yoshida; Kouichirou Kojima; Makoto Abe; Shiho Sasaki; Masaaki Kurihara; Hiroshi Mohri; Naoya Hayashi
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UV-NIL templates for the 22nm node and beyond
Author(s): Takaaki Hiraka; Satoshi Yusa; Akiko Fujii; Shiho Sasaki; Kimio Itoh; Nobuhito Toyama; Masaaki Kurihara; Hiroshi Mohri; Naoya Hayashi
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A study of template cleaning for nano-imprint lithography
Author(s): James E. Ellenson; Lloyd C. Litt; Abbas Rastegar
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Inverse lithography technology (ILT): keep the balance between SRAF and MRC at 45 and 32 nm
Author(s): Linyong Pang; Yong Liu; Thuc Dam; Kresimir Mihic; Thomas Cecil; Dan Abrams
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Overcoming loading challenges in a mask etcher for 45 nm and beyond
Author(s): M. Chandrachood; T. Y. B. Leung; K. Yu; M. Grimbergen; S. Panayil; I. Ibrahim; A. Sabharwal; A. Kumar
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Mask CD control (CDC) with ultrafast laser for improving mask CDU using AIMS as the CD metrology data source
Author(s): Guy Ben-Zvi; Eitan Zait; Vladimir Dmitriev; Erez Graitzer; Gidi Gottlieb; Lior Leibovich; Robert Birkner; Klaus Boehm; Thomas Scheruebl
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