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Proceedings of SPIE Volume 6520

Optical Microlithography XX
Editor(s): Donis G. Flagello
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Volume Details

Volume Number: 6520
Date Published: 9 March 2007
Softcover: 166 papers (1768) pages
ISBN: 9780819466396

Table of Contents
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Front Matter: Volume 6520
Author(s): Proceedings of SPIE
Marching of the microlithography horses: electron, ion, and photon: past, present, and future
Author(s): Burn J. Lin
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Future directions for CMOS device technology development from a system application perspective
Author(s): Tak H. Ning
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Optical lithography: 40 years and holding
Author(s): John H. Bruning
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Defects, overlay, and focus performance improvements with five generations of immersion exposure systems
Author(s): Jan Mulkens; Bob Streefkerk; Hans Jasper; Jos de Klerk; Fred de Jong; Leon Levasier; Martijn Leenders
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Current status of high-index immersion lithography development
Author(s): Yasuhiro Ohmura; Toshiharu Nakashima; Hiroyuki Nagasaka; Ayako Sukegawa; Satoshi Ishiyama; Koichi Kamijo; Masahiko Shinkai; Soichi Owa
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Integrating immersion lithography in 45-nm logic manufacturing
Author(s): Michael Benndorf; Scott Warrick; Will Conley; David Cruau; Danilo DeSimone; Karim Mestadi; Vincent Farys; Jan-Willem Gemmink
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Performance of immersion lithography for 45-nm-node CMOS and ultra-high density SRAM with 0.25um2
Author(s): Shoji Mimotogi; Fumikatsu Uesawa; Makoto Tominaga; Hiroharu Fujise; Koutaro Sho; Mikio Katsumata; Hiroki Hane; Atsushi Ikegami; Seiji Nagahara; Tatsuhiko Ema; Masafumi Asano; Hideki Kanai; Taiki Kimura; Masaaki Iwai
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Benefit of ArF immersion lithography in 55 nm logic device manufacturing
Author(s): Takayuki Uchiyama; Takao Tamura; Kazuyuki Yoshimochi; Paul Graupner; Hans Bakker; Eelco van Setten; Kenji Morisaki
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Snell or Fresnel: the influence of material index on hyper-NA lithography
Author(s): Bruce Smith; Jianming Zhou
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Hyper NA polarized imaging of 45nm DRAM
Author(s): Chang-Moon Lim; Sarohan Park; Yoon-Suk Hyun; Jin-Soo Kim; Tae-Seung Eom; Jun-Taek Park; Seung-Chan Moon; Jin-Woong Kim
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Pushing the boundary: low-k1 extension by polarized illumination
Author(s): Eelco van Setten; Wim de Boeij; Birgitt Hepp; Nicolas le Masson; Geert Swinkels; Mark van de Kerkhof
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Modeling polarization for hyper-NA lithography tools and masks
Author(s): Kafai Lai; Alan E. Rosenbluth; Geng Han; Jaione Tirapu-Azpiroz; Jason Meiring; Aksel Goehnermeier; Bernhard Kneer; Michael Totzeck; Laurens de Winter; Wim de Boeij; Mark van de Kerkhof
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Polarization-dependent proximity effects
Author(s): Jacek K. Tyminski; Tomoyuki Matsuyama; Toshiharu Nakashima; Thomas Schmoeller; John Lewellen
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The impact of projection lens polarization properties on lithographic process at hyper-NA
Author(s): Bernd Geh; Johannes Ruoff; Jörg Zimmermann; Paul Gräupner; Michael Totzeck; Markus Mengel; Uwe Hempelmann; Emil Schmitt-Weaver
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Pitch doubling through dual-patterning lithography challenges in integration and litho budgets
Author(s): Mircea Dusa; John Quaedackers; Olaf F. A. Larsen; Jeroen Meessen; Eddy van der Heijden; Gerald Dicker; Onno Wismans; Paul de Haas; Koen van Ingen Schenau; Jo Finders; Bert Vleeming; Geert Storms; Patrick Jaenen; Shaunee Cheng; Mireille Maenhoudt
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Issues and challenges of double patterning lithography in DRAM
Author(s): Seo-Min Kim; Sun-Young Koo; Jae-Seung Choi; Young-Sun Hwang; Jung-Woo Park; Eung-Kil Kang; Chang-Moon Lim; Seung-Chan Moon; Jin-Woong Kim
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Manufacturability issues with double patterning for 50-nm half-pitch single damascene applications using RELACS shrink and corresponding OPC
Author(s): Maaike Op de Beeck; Janko Versluijs; Vincent Wiaux; Tom Vandeweyer; Ivan Ciofi; Herbert Struyf; Dirk Hendrickx; Jan Van Olmen
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The modeling of double patterning lithographic processes
Author(s): Stewart A. Robertson; Trey Graves; Mark D. Smith; John J. Biafore
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A litho-only approach to double patterning
Author(s): A. Vanleenhove; D. Van Steenwinckel
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Evaluating the performance of a 193-nm hyper-NA immersion scanner using scatterometry
Author(s): Oleg Kritsun; Bruno La Fontaine; Richard Sandberg; Alden Acheta; Harry J. Levinson; Kevin Lensing; Mircea Dusa; Jan Hauschild; Anita Pici; Chandra Saravanan; Kunie Primak; Rahul Korlahalli; Srinivasan Nirmalgandhi
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Distinguishing dose, focus, and blur for lithography characterization and control
Author(s): Christopher P. Ausschnitt; Timothy A. Brunner
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Patterning control budgets for the 32-nm generation incorporating lithography, design, and RET variations
Author(s): Kevin Lucas; Chris Cork; Jonathan Cobb; Brian Ward; Martin Drapeau; Charlie Zhang; John Allgair; Mike Kling; Mike Rieger
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Control of polarization and apodization with film materials on photomasks and pellicles for high NA imaging performance
Author(s): Wen-Hao Cheng; Jeff Farnsworth
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Global optimization of masks, including film stack design to restore TM contrast in high NA TCC's
Author(s): Alan E. Rosenbluth; David Melville; Kehan Tian; Kafai Lai; Nakgeuon Seong; Dirk Pfeiffer; Matthew Colburn
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A solution for exposure tool optimization at the 65-nm node and beyond
Author(s): Daisuke Itai
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Fast and accurate 3D mask model for full-chip OPC and verification
Author(s): Peng Liu; Yu Cao; Luoqi Chen; Guangqing Chen; Mu Feng; Jiong Jiang; Hua-yu Liu; Sungsoo Suh; Sung-Woo Lee; Sukjoo Lee
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Process window and interlayer aware OPC for the 32-nm node
Author(s): Mark Terry; Gary Zhang; George Lu; Simon Chang; Tom Aton; Robert Soper; Mark Mason; Shane Best; Bill Dostalik; Stefan Hunsche; Jiang Wei Li; Rongchun Zhou; Mu Feng; Jim Burdorf
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OPC in memory-device patterns using boundary layer model for 3-dimensional mask topographic effect
Author(s): Young-Chang Kim; Insung Kim; JeongGeun Park; Sangwook Kim; Sungsoo Suh; Yongjin Cheon; Sukjoo Lee; Junghyeon Lee; Chang-Jin Kang; Jootae Moon; Jonathan Cobb; Sooryong Lee
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Generalized inverse lithography methods for phase-shifting mask design
Author(s): Xu Ma; Gonzalo R. Arce
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Sources and scaling laws for LER and LWR
Author(s): Tor Sandstrom; Christer Rydberg
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Polarization aberration analysis using Pauli-Zernike representation
Author(s): Norihiro Yamamoto; Jongwook Kye; Harry J. Levinson
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Best focus determination: bridging the gap between optical and physical topography
Author(s): Frank Kahlenberg; Rolf Seltmann; Bruno M. La Fontaine; René Wirtz; Aernout Kisteman; Roel N. M. Vanneer; Marco Pieters
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Immersion defect reduction, part II: the formation mechanism and reduction of patterned defects
Author(s): Lin-Hung Shiu; Fu-Jye Liang; Hsing Chang; Chun-Kuang Chen; Li-Jui Chen; Tsai-Sheng Gau; Burn J. Lin
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Optical error sensitivities of immersion lithography
Author(s): Zheng G. Chen; Kafai Lai; Ken Racette
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Contamination and particle control system in immersion exposure tool
Author(s): Masamichi Kobayashi; Hitoshi Nakano; Mikio Arakawa; Masayuki Tanabe; Koji Toyoda; Takahito Chibana; Yoichi Matsuoka; Youji Kawasaki
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Extending immersion lithography to the 32-nm node
Author(s): Scott Warrick; Will Conley; Vincent Farys; Michael Benndorf; Jan-Willem Gemmink; Yorick Trouiller; Jerome Belledent; Dejan Jovanovic; Pascal Gouraud
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Immersion defectivity study with volume production immersion lithography tool
Author(s): Katsushi Nakano; Hiroshi Kato; Tomoharu Fujiwara; K. Shiraishi; Yasuhiro Iriuchijima; Soichi Owa; Irfan Malik; Steve Woodman; Prasad Terala; Christine Pelissier; Haiping Zhang
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Lossless compression algorithm for hierarchical IC layout data
Author(s): Allan Gu; Avideh Zakhor
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Advances in compute hardware platforms for computational lithography
Author(s): Tom Kingsley; John Sturtevant; Steve McPherson; Matt Sexton
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Phase-shifted assist feature OPC for sub-45-nm node optical lithography
Author(s): Gi-Sung Yoon; Hee-Bom Kim; Jeung-Woo Lee; Seong-Woon Choi; Woo-Sung Han
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The random contact hole solutions for future technology nodes
Author(s): Alek Chen; Steve Hansen; Marco Moers; Jason Shieh; Andre Engelen; Koen van Ingen Schenau; Shih-en Tseng
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RET application in 45-nm node and 32-nm node contact hole dry ArF lithography process development
Author(s): Xiangqun Miao; Xumou Xu; Yongmei Chen; Chris Ordonio; Chris Bencher; Chris Ngai
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Patterning with amorphous carbon spacer for expanding the resolution limit of current lithography tool
Author(s): Woo-Yung Jung; Sang-Min Kim; Choi-Dong Kim; Guee-Hwang Sim; Sung-Min Jeon; Sang-Wook Park; Byung-Seok Lee; Sung-Ki Park; Ji-Soo Kim; Lee-Sang Heon
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32-nm SOC printing with double patterning, regular design, and 1.2 NA immersion scanner
Author(s): Yorick Trouiller; Vincent Farys; Amandine Borjon; Jérôme Belledent; Christophe Couderc; Frank Sundermann; Jean-Christophe Urbani; Yves Rody; Christian Gardin; Jonathan Planchot; Will Conley; Pierre-Jerome Goirand; Scott Warrick; Frédéric Robert; Gurwan Kerrien; Florent Vautrin; Bill Wilkinson; Mazen Saied; Emic Yesilada; Patrick Montgomery; Laurent Le Cam; Catherine Martinelli
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Ultra-low <i>k</i><sub>1</sub> oxide contact hole formation and metal filling using resist contact hole pattern by double L&S formation method
Author(s): Hiroko Nakamura; Mitsuhiro Omura; Souichi Yamashita; Yasuyuki Taniguchi; Junko Abe; Satoshi Tanaka; Soichi Inoue
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Pupil plane analysis on AIMS 45-193i for advanced photomasks
Author(s): Yasutaka Morikawa; Takanori Sutou; Kei Mesuda; Takaharu Nagai; Yuichi Inazuki; Takashi Adachi; Nobuhito Toyama; Hiroshi Mohri; Naoya Hayashi; Ulrich Stroessner; Robert Birkner; Rigo Richter; Thomas Scheruebl
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The impact of the mask stack and its optical parameters on the imaging performance
Author(s): Andreas Erdmann; Tim Fühner; Sebastian Seifert; Stephan Popp; Peter Evanschitzky
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Mask 3D effect on 45-nm imaging using attenuated PSM
Author(s): Kazuya Sato; Masamitsu Itoh; Takashi Sato
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Effects of reticle birefringence on 193-nm lithography
Author(s): Scott Light; Irina Tsyba; Christopher Petz; Pary Baluswamy; Brett Rolfson
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Early look into device level imaging with beyond water immersion
Author(s): Will Conley; Scott Warrick; Cesar Garza; Pierre-Jerome Goirand; Jan-Willem Gemmink; David Van Steenwinckel
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Extending immersion lithography with high-index materials: results of a feasibility study
Author(s): Harry Sewell; Jan Mulkens; Paul Graeupner; Diane McCafferty; Louis Markoya; Sjoerd Donders; Nandasiri Samarakone; Rudiger Duesing
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High-index immersion lithography with second-generation immersion fluids to enable numerical aperatures of 1.55 for cost effective 32-nm half pitches
Author(s): R. H. French; V. Liberman; H. V. Tran; J. Feldman; D. J. Adelman; R. C. Wheland; W. Qiu; S. J. McLain; O. Nagao; M. Kaku; M. Mocella; M. K. Yang; M. F. Lemon; L. Brubaker; A. L. Shoe; B. Fones; B. E. Fischel; K. Krohn; D. Hardy; C. Y. Chen
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High-index fluoride materials for 193-nm immersion lithography
Author(s): Teruhiko Nawata; Yoji Inui; Isao Masada; Eiichi Nishijima; Toshiro Mabuchi; Naoto Mochizuki; Hiroki Satoh; Tsuguo Fukuda
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Feasibility of 37-nm half-pitch with ArF high-index immersion lithography
Author(s): Yoshiyuki Sekine; Miyoko Kawashima; Eiji Sakamoto; Keita Sakai; Akihiro Yamada; Tokuyuki Honda
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Application of full-chip optical proximity correction for sub-60-nm memory device in polarized illumination
Author(s): Hyoung-Soon Yune; Yeong-Bae Ahn; Dong-jin Lee; James Moon; Byung-Ho Nam; Dong-gyu Yim
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Utilization of optical proximity effects for resist image stitching
Author(s): Yongfa Fan; Tom Castro
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Methods for comparative extraction of OPC response
Author(s): Terrence E. Zavecz
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ACLV driven double-patterning decomposition with extensively added printing assist features (PrAFs)
Author(s): Jason E. Meiring; Henning Haffner; Carlos Fonseca; Scott D. Halle; Scott M. Mansfield
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A discussion of the regression of physical parameters for photolithographic process models
Author(s): Lawrence S. Melvin; Kevin D. Lucas
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Latest results from the hyper-NA immersion scanners S609B and S610C
Author(s): Jun Ishikawa; Tomoharu Fujiwara; Kenichi Shiraishi; Yuuki Ishii; Masahiro Nei
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Immersion exposure tool for the 45-nm HP mass production
Author(s): Hiroaki Kubo; Hideo Hata; Fumio Sakai; Nobuyoshi Deguchi; Takehiko Iwanaga; Takeaki Ebihara
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Performance of a 1.35NA ArF immersion lithography system for 40-nm applications
Author(s): Jos de Klerk; Christian Wagner; Richard Droste; Leon Levasier; Louis Jorritsma; Eelco van Setten; Hans Kattouw; Jowan Jacobs; Tilmann Heil
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Exposure and compositional factors that influence polarization induced birefringence in silica glass
Author(s): Douglas C. Allan; Michal Mlejnek; Ulrich Neukirch; Charlene M. Smith; Frances M. Smith
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XLR 500i: recirculating ring ArF light source for immersion lithography
Author(s): D.J. W. Brown; P. O'Keeffe; V. B. Fleurov; R. Rokitski; R. Bergstedt; I. V. Fomenkov; K. O'Brien; N. R. Farrar; W. N. Partlo
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Catadioptric projection lens for 1.3 NA scanner
Author(s): Tomoyuki Matsuyama; Yasuhiro Ohmura; Yohei Fujishima; Takashi Koyama
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New projection optics and aberration control system for the 45-nm node
Author(s): Toshiyuki Yoshihara; Bunsuke Takeshita; Atsushi Shigenobu; Yasuo Hasegawa; Yoshinori Ohsaki; Kazuhiko Mishima; Seiya Miura
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Integration of a new alignment sensor for advanced technology nodes
Author(s): Paul Hinnen; Jerome Depre; Shinichi Tanaka; Ser-Yong Lim; Omar Brioso; Mir Shahrjerdy; Kazutaka Ishigo; Takuya Kono; Tatsuhiko Higashiki
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Ultra line narrowed injection lock laser light source for higher NA ArF immersion lithography tool
Author(s): Toru Suzuki; Kouji Kakizaki; Takashi Matsunaga; Satoshi Tanaka; Yasufumi Kawasuji; Masashi Shimbori; Masaya Yoshino; Takahito Kumazaki; Hiroshi Umeda; Hitoshi Nagano; Shinji Nagai; Youichi Sasaki; Hakaru Mizoguchi
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Demonstration of sub-45-nm features using azimuthal polarization on a 1.30NA immersion microstepper
Author(s): Emil C. Piscani; Shane Palmer; Chris Van Peski
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Optical performance enhancement technique for 45-nm-node with binary mask
Author(s): Jin-Sik Jung; Hee-Bom Kim; Jeung-Woo Lee; Sung-Woon Choi; Woo-Sung Han
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Size tolerance of sub-resolution assist features for sub-50-nm node device
Author(s): Byung-Sung Kim; Sung-Ho Lee; Hong-Jae Shin; Nae-In Lee
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A method for generating assist-features in full-chip scale and its application to contact layers of sub-70-nm DRAM devices
Author(s): Dong-Woon Park; Sangwook Kim; Chan Hwang; Sukjoo Lee; Han-Ku Cho; Joo-Tae Moon
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Process window optimization of CPL mask for beyond 45-nm lithography
Author(s): Soon Yoeng Tan; Qunying Lin; Cho Jui Tay; Chenggen Quan
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SRAF placement and sizing using inverse lithography technology
Author(s): Timothy Lin; Frederic Robert; Amandine Borjon; Gordon Russell; Catherine Martinelli; Andrew Moore; Yves Rody
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Optimal SRAF placement for process window enhancement in 65-nm/45-nm technology
Author(s): Chandra Sarma; Klaus Herold; Christoph Noelscher; Paul Schroeder
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Intensity weighed focus drilling exposure for maximizing process window of sub-100-nm contact by simulation
Author(s): Sunwook Jung; Tien-Chu Yang; Ta-Hung Yang; Kuang-Chao Chen; Chih-Yuan Lu
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Process margin improvement using custom transmission EAPSM reticles
Author(s): J. Buntin; S. Agarwal; B. Rolfson; R. Housley; B. Baggenstoss; E. Byers; C. Progler
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Verification of high-transmittance PSM with polarization at 193-nm high-NA system
Author(s): Chui Fu Chiu; Chih Li Chen; Jenn Wei Lee; Wen Bin Wu; Chiang Lin Shih; Feng Yi Chen; Jeng Ping Lin
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A study of double exposure process design with balanced performance parameters for line/space applications
Author(s): Jun Zhu; Peng Wu; Qiang Wu; Hua Ding; Xin Li; Changjiang Sun
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The improvement of photolithographic fidelity of two-dimensional structures through double exposure method
Author(s): Qingqing Wenren; Hua Ding; Xin Li; Changjiang Sun; Jun Zhu; Qiang Wu
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Double patterning with multilayer hard mask shrinkage for sub-0.25 k1 lithography
Author(s): Hung Jen Liu; Wei Hsien Hsieh; Chang Ho Yeh; Jan Shiun Wu; Hung Wei Chan; Wen Bin Wu; Feng Yi Chen; Tse Yao Huang; Chiang Lin Shih; Jeng Ping Lin
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Sub-k1 = 0.25 lithography with double patterning technique for 45-nm technology node flash memory devices at &#955; = 193nm
Author(s): Gianfranco Capetti; Pietro Cantù; Elisa Galassini; Alessandro Vaglio Pret; Catia Turco; Alessandro Vaccaro; Pierluigi Rigolli; Fabrizio D'Angelo; Gina Cotti
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Quantum state control interference lithography and trim double patterning for 32-16-nm lithography
Author(s): Robert D. Frankel; Bruce W. Smith; Andrew Estroff
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Double exposure using 193-nm negative tone photoresist
Author(s): Ryoung-han Kim; Tom Wallow; Jongwook Kye; Harry J. Levinson; Dave White
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Feasibility study of splitting pitch technology on 45-nm contact patterning with 0.93 NA
Author(s): Yung Feng Cheng; Yueh Lin Chou; Ting Cheng Tseng; Bo Yun Hsueh; Chuen Huei Yang
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Dark Field Double Dipole Lithography (DDL) for back-end-of-line processes
Author(s): M. Burkhardt; Sean Burns; Derren Dunn; T. A. Brunner; Stephen D. Hsu; Jungchul Park
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A study of process window capabilities for two-dimensional structures under double exposure condition
Author(s): Qiang Wu; Peng Wu; Jun Zhu; Hua Ding; Xin Li; Changjiang Sun; Chaoqun Peng
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New double exposure technique without alternating phase-shift mask
Author(s): Tomohiko Yamamoto; Teruyoshi Yao; Hiroki Futatsuya; Tatsuo Chijimatsu; Satoru Asai
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ILT for double exposure lithography with conventional and novel materials
Author(s): Amyn Poonawala; Yan Borodovsky; Peyman Milanfar
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Development and characterization of a 300-mm dual-side alignment stepper
Author(s): Warren W. Flack; Emily M. True; Robert Hsieh; Detlef Fuchs; Ray Ellis
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Flare effect of different shape of illumination apertures in 193-nm optical lithography system
Author(s): Young-Je Yun; Jeahee Kim; Keeho Kim
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Silicon verification of flare model & application to real chip for long range proximity correction
Author(s): Dongqing Zhang; Byoung Il Choi; Foong Yee Mei; Suleni Tunggal Mulia; Jung Yu Hsieh; James Word; Yasri Yudhistira
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Thermal aberration control for low-k1 lithography
Author(s): Yusaku Uehara; Tomoyuki Matsuyama; Toshiharu Nakashima; Yasuhiro Ohmura; Taro Ogata; Kosuke Suzuki; Noriaki Tokuda
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Quasi-telecentricity: the effects of unbalanced multipole illumination
Author(s): Stephen P. Renwick
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Novel high-throughput micro-optical beam shapers reduce the complexity of macro-optics in hyper-NA illumination systems
Author(s): T. Bizjak; T. Mitra; L. Aschke
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A solid-state 193-nm laser with high spatial coherence for sub-40-nm interferometric immersion lithography
Author(s): Andrew J. Merriam; Donald S. Bethune; John A. Hoffnagle; William D. Hinsberg; C. Michael Jefferson; James J. Jacob; Timothy Litvin
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Investigations regarding the prevention of depolarization of ArF excimer laser irradiation by CaF<sub>2</sub> laser optics
Author(s): Ute Natura; Dietmar Keutel; Martin Letz; Lutz Parthier; Konrad Knapp
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Reliable high-power injection locked 6kHz 60W laser for ArF immersion lithography
Author(s): Hidenori Watanabe; Shigeo Komae; Satoshi Tanaka; Ryoichi Nohdomi; Taku Yamazaki; Hiroaki Nakarai; Junichi Fujimoto; Takashi Matsunaga; Takashi Saito; Kouji Kakizaki; Hakaru Mizoguchi
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Increased availability of lithography light sources using advanced gas management
Author(s): Wayne J. Dunstan; Robert Jacques; Kevin O'Brien; Aravind Ratnam
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A study of overlay mark robustness and enhanced alignment techniques for alignment improvement on metal layers of sub-100-nm technology
Author(s): Kaushalia Dubey; Toru Nakamura; Hiroshi Tanaka; Nozomu Hayashi; Shinichi Egashira; Kazuhiko Mishima; Tomohiro Mase; Tamio Takeuchi; Akihiko Honda; Takatoshi Kakizaki
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The optimization of zero-spaced microlenses for 2.2um pixel CMOS image sensor
Author(s): Hyun hee Nam; Jeong Lyeol Park; Jea Sung Choi; Jeong Gun Lee
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Illumination optimization with actual information of exposure tool and resist process
Author(s): Koichiro Tsujita; Koji Mikami; Ryotaro Naka; Norikazu Baba; Tomomi Ono; Akiyoshi Suzuki
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Impact of illumination performance on hyper-NA imaging for 45-nm node
Author(s): Ken-Ichiro Mori; Akihiro Yamada; Takahisa Shiozawa; Kazuhiro Takahashi
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Visualizing the impact of the illumination distribution upon imaging, and applying the insights gained
Author(s): Steve D. Slonaker
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Optimal solutions for the illuminator and final lens pupil coupled distributions beyond the axial symmetry
Author(s): Igor Ivonin; Tor Sandstrom
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Sensitivity of hyper-NA immersion lithography to illuminator imperfections
Author(s): Weimin Gao; Laurens De Winter
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The calibration of process window model for 55-nm node
Author(s): Te Hung Wu; Sheng Yuan Huang; Chia Wei Huang; Pei Ru Tsai; Chuen Huei Yang; Irene Yi-Ju Su; Brad Falch
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SEM based data extraction for model calibration
Author(s): Mohamed Al-Imam; H. Y. Liao; Jochen Schacht; George E. Bailey; Te Hung Wu; Chia Wei Huang; Sheng Yuan Huang; Pei Ru Tsai; Chuen Huei Yang
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Distributed model calibration using Levenberg-Marquardt algorithm
Author(s): Mark Lu; Liang Zhu; Li Ling; Gary Zhang; Walter Chan; Xin Zhou
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Analytical approach to high-NA images
Author(s): Sang-Kon Kim
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Modeling and performance metrics for longitudinal chromatic aberrations, focus-drilling, and Z-noise: exploring excimer laser pulse-spectra
Author(s): Mark Smith; Joseph Bendik; Ivan Lalovic; Nigel Farrar; William Howard; Chris Sallee
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Dr.LiTHO: a development and research lithography simulator
Author(s): Tim Fühner; Thomas Schnattinger; Gheorghe Ardelean; Andreas Erdmann
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Lithographic characterization of evanescent-wave imaging systems
Author(s): Trey Graves; Mark D. Smith; Stewart A. Robertson
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Heuristics for truncating the number of optical kernels in Hopkins image calculations for model-based OPC treatment
Author(s): Christian Zuniga; Edita Tejnil
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Topography induced defocus with a scanning exposure system
Author(s): Bernhard R. Liegl; Nelson Felix; Colin Brodsky; David Dobuzinsky
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Study of iso-dense bias (IDB) sensitivity to laser spectral shape at the 45nm node
Author(s): Kazuyuki Yoshimochi; Takayuki Uchiyama; Takao Tamura; Thomas Theeuwes; Rudy Peeters; Hans van der Laan; Hans Bakker; Kenji Morisaki; Toshihiro Oga
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Precise measurement of process bias and its relation to MEEF
Author(s): Terrence E. Zavecz
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Assessment of trade-off between resist resolution and sensitivity for optimization of hyper-NA immersion lithography
Author(s): Yasuhiro Kishikawa; Miyoko Kawashima; Akinori Ohkubo; Yuichi Iwasaki; Seiji Takeuchi; Minoru Yoshii; Tokuyuki Honda
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Understanding the impact of rigorous mask effects in the presence of empirical process models used in optical proximity correction (OPC)
Author(s): Michael C. Lam; Konstantinos Adam
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Transistor-based electrical test structures for lithography and process characterization
Author(s): Wojtek J. Poppe; Juliet Holwill; Liang-Teck Pang; Paul Friedberg; Qingguo Liu; Louis Alarcon; Andrew Neureuther
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Use of starburst patterns in optical lithography
Author(s): M. Burkhardt; Cyrus Tabery
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Challenging to meet 1-nm iso-dense bias (IDB) by controlling laser spectrum
Author(s): Toshihiro Oga; Tomohiko Yamamoto; Teruyoshi Yao; Satoru Asai; Takehito Kudo; Tsuyoshi Toki
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Impact of mask error on OPC for 45-nm node
Author(s): Oseo Park
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Taking image quality factor into the OPC model tuning flow
Author(s): Ching-Heng Wang; Qingwei Liu; Liguo Zhang
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Effects of laser bandwidth on iso-dense bias and line-end shortening at sub-micron process nodes
Author(s): R. C. Peng; A. K. Yang; L. J. Chen; Y. W. Guo; H. H. Liu; John Lin; Allen Chang
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On the quality of measured optical aberration coefficients using phase wheel monitor
Author(s): Lena V. Zavyalova; Aaron R. Robinson; Anatoly Bourov; Neal V. Lafferty; Bruce W. Smith
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A comparative study for mask defect tolerance on phase and transmission for dry and immersion 193-nm lithography
Author(s): Moh Lung Ling; Gek Soon Chua; Cho Jui Tay; Chenggen Quan; Qunying Lin
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The causes of horizontal-vertical (H-V) bias in optical lithography: dipole source errors
Author(s): John J. Biafore; Chris A. Mack; Stewart A. Robertson; Mark D. Smith; Sanjay Kapasi
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OPC-free on-grid fine random hole pattern formation utilizing double resist patterning with double RETs
Author(s): Shuji Nakao; Shinroku Maejima; Takeshi Yamamoto; Yoshiharu Ono; Junjiro Sakai; Atsumi Yamaguchi; Akira Imai; Tetsuro Hanawa; Kazuyuki Sukoh
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Virtual OPC at hyper NA lithography
Author(s): Sook Lee; Sang-Wook Kim; Yong-Jin Chun; Sung-Soo Suh; Yun-Kyeong Jang; Suk-Joo Lee; Sung-Woon Choi; Woo-Sung Han
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Mask-friendly OPC for a reduced mask cost and writing time
Author(s): Ayman Yehia
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Methods and factors to optimize OPC run-time
Author(s): A. D Dave; C. P. Babcock; S. N. McGowan; Y. Zou
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Golden curve method for OPC signature stability control in high MEEF applications
Author(s): Katja Geidel; Torsten Franke; Stefan Roling; Peter Buck; Martin Sczyrba; Engelbert Mittermeier; Russell Cinque
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Mask enhancement using an evanescent wave effect
Author(s): Neal V. Lafferty; Jianming Zhou; Bruce W. Smith
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The gate CD uniformity improvement by the layout retarget with refer to the litho process
Author(s): No-Young Chung; Yeon-Ju Yoon; Sung-Ho Lee; Sung-Il Kim; Sang-Rok Ha; Sun-Yong Lee
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Toward standard process models for OPC
Author(s): Yuri Granik; Dmitry Medvedev; Nick Cobb
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Modular process modeling for OPC
Author(s): M. C. Keck; C. Bodendorf; T. Schmidtling; R. Schlief; R. Wildfeuer; S. Zumpe; M. Niehoff
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Fast predictive post-OPC contact/via printability metric and validation
Author(s): Peng Yu; David Z. Pan
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Analysis of pattern density on process proximity compensation
Author(s): Sunwook Jung; Fred Lo; Tien-Chu Yang; Ta-Hong Yang; Kuang-Chao Chen; Chih-Yuan Lu
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Advanced new OPC method to improve OPC accuracy for sub-90-nm technology
Author(s): Jaeyoung Choi; Jaehyun Kang; Yeonah Shim; Kyunghee Yun; Jiho Hong; Yongseok Lee; Keeho Kim
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SEM image contouring for OPC model calibration and verification
Author(s): Cyrus Tabery; Hidetoshi Morokuma; Ryoichi Matsuoka; Lorena Page; George E. Bailey; Ir Kusnadi; Thuy Do
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Improving the model robustness for OPC by extracting relevant test patterns for calibration
Author(s): Moon-Gyu Jeong; Sang-Ho Lee; Jee-Eun Jung; Chankyeong Hyon; Iljung Choi; Young-Seog Kang; Youngkyou Park
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Rapid search of the optimum placement of assist feature to improve the aerial image gradient in iso-line structure
Author(s): Jianliang Li; Qiliang Yan; Lawrence S. Melvin
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A feasible model-based OPC algorithm using Jacobian matrix of intensity distribution functions
Author(s): Ye Chen; Kechih Wu; Zheng Shi; Xiaolang Yan
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Geometrical description of the microloading effect in silicon trench structures
Author(s): Iryna Titarenko; Enna Altshuler; Rama Tweg
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Investigation of DFM-lite ORC approach during OPC simulation
Author(s): Chin Teong Lim; Kai Peter; Vlad Temchenko; Dave Wallis; Dieter Kaiser; Ingo Meusel; Sebastian Schmidt; Martin Niehoff
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Comparing traditional OPC to field-based OPC for 45-nm node production
Author(s): Rick Farnbach; Josh Tuttle; Matt St. John; Randy Brown; Dave Gerold; Kevin Lucas; Robert Lugg; James Shiely; Mike Rieger
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Studying the 3D mask effect on CD variation for 65-nm and beyond
Author(s): Chi-Yuan Hung; Yue Gong
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CDU minimization at the 45-nm node and beyond: optical, resist, and process contributions to CD control
Author(s): Steven Scheer; Mike Carcasi; Tsuyoshi Shibata; Takahisa Otsuka
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ACLV performance dry vs. immersion on 45-nm ground rules
Author(s): Uwe P. Schroeder; Chin-Chin Yap; Chandra S. Sarma; Alan Thomas
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Feasibility Study of 45nm Metal Patterning with 0.93 NA
Author(s): Yung Feng Cheng; Yueh Lin Chou; Ya Ching Hou; Bo Jou Lu; Chuen Huei Yang
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Optimization of DUV lithography for high-energy well implantation
Author(s): Ryan Deschner; Seong-Dong Kim; Randy Mann; Mark Stidham; Greg M. Johnson; JoAnn Rolick
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Challenges and solutions for transferring a 248-nm process to 365-nm imaging
Author(s): Alexander Serebriakov; Chicheng Chang; Arthur Becht; Rene Pluijms; Anthony Cheng; Elly Shi; Han van den Broek; Li Zhao
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New color alignment for CMOS image sensor
Author(s): Miri Kish Dagan; Remi Edart; Hadas Rechtman; Yehuda Kanfi; Patrick Warnaar; Oshri Moshe; Richard van Haren
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A thin FinFET Si-fin body structure fabricated with 193-nm scanner photolithography and composite hard mask etching technique upon bulk-Si substrate
Author(s): Wen-Shiang Liao; Yu-Huan Liu; Wen-Tung Chang; Tung-Hung Chen; Tommy Shih; Huan-Chiu Tsen; Lee Chung
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ARC stack development for hyper-NA imaging
Author(s): Vincent Farys; Scott Warrick; Catherine Chaton; Jean-Damien Chapon
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A thick CESL stressed ultra-small (Lg=40-nm) SiGe-channel MOSFET fabricated with 193-nm scanner lithography and TEOS hard mask etching
Author(s): Wen-Shiang Liao; Tung-Hung Chen; Hsin-Hung Lin; Wen-Tung Chang; Tommy Shih; Huan-Chiu Tsen; Lee Chung
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Three-dimensional mask effects and source polarization impact on OPC model accuracy and process window
Author(s): M. Saied; F. Foussadier; J. Belledent; Y. Trouiller; I. Schanen; C. Gardin; J. C. Urbani; P. K. Montgomery; F. Sundermann; F. Robert; C. Couderc; F. Vautrin; G. Kerrien; J. Planchot; E. Yesilada; C. Martinelli; B. Wilkinson; A. Borjon; L. Le-Cam; J. L. Di-Maria; Y. Rody; N. Morgana; Vincent Farys
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The choice of mask in consideration of polarization effects at high-NA system
Author(s): Sung-Hyuck Kim; Soon-Ho Kim; Sang-Yong Yu; Yong-Hoon Kim; Jeung-Woo Lee; Han-Ku Cho
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Analysis of diffraction orders including mask topography effects for OPC optimization
Author(s): Yuichi Inazuki; Nobuhito Toyama; Takashi Adachi; Takaharu Nagai; Takanori Suto; Yasutaka Morikawa; Hiroshi Mohri; Naoya Hayashi
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Immersion lithography with numerical apertures above 2.0 using high index optical materials
Author(s): Jianming Zhou; Neal V. Lafferty; Bruce W. Smith; John H. Burnett
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Immersion defect reduction, part I: analysis of water leaks in an immersion scanner
Author(s): Fu-Jye Liang; Hsing Chang; Lin-Hung Shiu; Chun-Kuang Chen; Li-Jui Chen; Tsai-Sheng Gau; Burn J. Lin
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Defect testing using an immersion exposure system to apply immediate pre-exposure and post-exposure water soaks
Author(s): Robert D. Watso; Thomas Laursen; Bill Pierson; Kevin D. Cummings
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Polarization properties of state-of-art lithography optics represented by first canonical coordinate of Lie group
Author(s): Toru Fujii; Yuji Kudo; Yasuhiro Ohmura; Kosuke Suzuki; Jun Kogo; Yasushi Mizuno; Naonori Kita; Masayasu Sawada
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Characteristics analysis of polarization module on optical proximity effect
Author(s): Chanha Park; Jongkyun Hong; Kiho Yang; Thomas Theeuwes; Frederic Gautier; Young-Hong Min; Alek Chen; Hyunjo Yang; Donggyu Yim; Jinwoong Kim
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Laser durability studies of high index immersion fluids: fluid degradation and optics contamination effects
Author(s): V. Liberman; M. Rothschild; S. T. Palmacci; P. A. Zimmerman; A. Grenville
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