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Proceedings of SPIE Volume 6518

Metrology, Inspection, and Process Control for Microlithography XXI
Editor(s): Chas N. Archie
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Volume Details

Volume Number: 6518
Date Published: 15 March 2007
Softcover: 167 papers (1716) pages
ISBN: 9780819466372

Table of Contents
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Front Matter: Volume 6518
Author(s): Proceedings of SPIE
Metrology challenges of double exposure and double patterning
Author(s): William H. Arnold; Mircea Dusa; Jo Flinders
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Process monitor gratings
Author(s): T. A. Brunner; C. P. Ausschnitt
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Lithography process control using scatterometry metrology and semi-physical modeling
Author(s): Kevin Lensing; Jason Cain; Amogh Prabhu; Alok Vaid; Robert Chong; Richard Good; Bruno LaFontaine; Oleg Kritsun
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Evaluating a scatterometry-based focus monitor technique for hyper-NA lithography
Author(s): Chandra Saru Saravanan; Srinivasan Nirmalgandhi; Oleg Kritsun; Alden Acheta; Richard Sandberg; Bruno La Fontaine; Harry J. Levinson; Kevin Lensing; Mircea Dusa; Jan Hauschild; Anita Pici
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Focus and dose controls, and their application in lithography
Author(s): Hideki Ina; Koichi Sentoku; Satoru Oishi; Tomoyuki Miyashita; Takahiro Matsumoto
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Statistical optimization of sampling plan and its relation to OPC model accuracy
Author(s): Geng Han; Andrew Brendler; Scott Mansfield; Jason Meiring
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Automatic setup of in-line critical dimension (CD) recipes during OPC qualification in a foundry environment
Author(s): Yasri Yudhistira; Quek Shyue Fong; Chan Sun Sun; Koh Hui Peng; Rachel Ren; Sern Loong Ng; Amit Siany; Shimon Levi
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Quantification of two-dimensional structures generalized for OPC model verification
Author(s): Xuelong Shi; J. Fung Chen; Doug Van Den Broeke; Stephen Hsu; Michael Hsu
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Setting MRC rules: balancing inspection capabilities, defect sensitivity, and OPC
Author(s): Ian Stobert; James Bruce; Mohamed Gheith; Ahmed Seoud
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Methodology to set up accurate OPC model using optical CD metrology and atomic force microscopy
Author(s): Yeon-Ah Shim; Jaehyun Kang; Sang-Uk Lee; Jeahee Kim; Keeho Kim
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SEM-contour-based OPC model calibration through the process window
Author(s): Jim Vasek; Ovadya Menedeva; Dan Levitzky; Ofer Lindman; Youval Nemadi; George E. Bailey; John L. Sturtevant
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Meeting overlay requirements for future technology nodes with in-die overlay metrology
Author(s): Bernd Schulz; Rolf Seltmann; Jens Busch; Fritjof Hempel; Eric Cotte; Benjamin Alles
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Zero-order imaging of device-sized overlay targets using scatterfield microscopy
Author(s): Bryan M. Barnes; Lowell P. Howard; Jay Jun; Pete Lipscomb; Richard M. Silver
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Blossom overlay metrology implementation
Author(s): C. P. Ausschnitt; W. Chu; D. Kolor; J. Morillo; J. L. Morningstar; W. Muth; C. Thomison; R. J. Yerdon; L. A. Binns; P. Dasari; H. Fink; N. P. Smith; G. Ananew
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The application of SMASH alignment system for 65-55-nm logic devices
Author(s): M. Miyasaka; H. Saito; T. Tamura; T. Uchiyama; Paul Hinnen; Hyun-Woo Lee; Marc van Kemenade; Mir Shahrjerdy; Robert van Leeuwen
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Overlay metrology tool calibration
Author(s): L. A. Binns; P. Dasari; N. P. Smith; G. Ananew; H. Fink; C. P. Ausschnitt; J. Morningstar; C. Thomison; R. J. Yerdon
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Monte Carlo modeling of secondary electron imaging in three dimensions
Author(s): John S. Villarrubia; Nicholas W. M. Ritchie; Jeremiah R. Lowney
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Evaluation of CD-SEM measurement uncertainty using secondary electron simulation with charging effect
Author(s): Hideaki Abe; Akira Hamaguchi; Yuichiro Yamazaki
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Carbon nanotube metrology in a CD SEM
Author(s): Colin Yates; Thomas Rueckes; Richard J. Carter
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Physical matching versus CD matching for CD SEM
Author(s): Roman Kris; Galit Zuckerman; Elad Sommer; Zion Hadad; Shalev Dror; Aviram Tam; Naftali Shcolnik
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Developing the new ADC algorithm that enables to identify the defect source
Author(s): Po-Yueh Tsai; Wen-Feng Chiu; To-Yu Chen; Fumiaki Endo; Yuko Kariya; Kazunori Nemoto
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Developing micro ADI methodology for new litho process monitoring strategies
Author(s): Iris Mäge; Uwe Seifert; Barry Saville; Martin Tuckermann
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Immersion lithography defectivity analysis at DUV inspection wavelength
Author(s): E. Golan; D. Meshulach; N. Raccah; J. Ho. Yeo; O. Dassa; S. Brandl; C. Schwarz; B. Pierson; W. Montgomery
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Innovative metrology for wafer edge defectivity in immersion lithography
Author(s): I. Pollentier; F. Iwamoto; M. Kocsis; A. Somanchi; F. Burkeen; S. Vedula
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Fundamental limits of optical critical dimension metrology: a simulation study
Author(s): Richard Silver; Thomas Germer; Ravikiran Attota; Bryan M. Barnes; Benjamin Bunday; John Allgair; Egon Marx; Jay Jun
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Detailed analysis of capability and limitations of CD scatterometry measurements for 65- and 45-nm nodes
Author(s): Irina Pundaleva; Roman Chalykh; JeungWoo Lee; SeongWoon Choi; Woosung Han
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Real-time profile shape reconstruction using dynamic scatterometry
Author(s): Sébastien Soulan; Maxime Besacier; Tanguy Leveder; Patrick Schiavone
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Mueller polarimetry in the back focal plane
Author(s): A. De Martino; S. Ben Hatit; M. Foldyna
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Application of perturbation methods in optical scatterometry
Author(s): B. C. Bergner; T. J. Suleski
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Modeling the effect of line profile variation on optical critical dimension metrology
Author(s): Thomas A. Germer
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TEM calibration methods for critical dimension standards
Author(s): Ndubuisi G. Orji; Ronald G. Dixson; Domingo I. Garcia-Gutierrez; Benjamin D. Bunday; Michael Bishop; Michael W. Cresswell; Richard A. Allen; John A. Allgair
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Image simulation and surface reconstruction of undercut features in atomic force microscopy
Author(s): Xiaoping Qian; John Villarrubia; Fenglei Tian; Ronald Dixson
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Statistical approach utilizing neural networks for CD error prediction
Author(s): Masafumi Asano; Masaki Satake; Satoshi Tanaka; Shoji Mimotogi
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Characterizing pattern structures using x-ray reflectivity
Author(s): Hae-Jeong Lee; Christopher L. Soles; Hyun Wook Ro; Shuhui Kang; Eric K. Lin; Alamgir Karim; Wen-li Wu; D. R. Hines
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Accuracy in optical image modeling
Author(s): James Potzick; Egon Marx; Mark Davidson
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Single crystal critical dimension reference materials (SCCDRM): process optimization for the next generation of standards
Author(s): Ronald G. Dixson; William F. Guthrie; Michael Cresswell; Richard A. Allen; Ndubuisi G. Orji
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Comparison and uncertainties of standards for critical dimension atomic force microscope tip width calibration
Author(s): Ronald Dixson; Ndubuisi G. Orji
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Application of carbon nanotube probes in a critical dimension atomic force microscope
Author(s): B. C. Park; J. Choi; S. J. Ahn; D-H Kim; J. Lyou; R. Dixson; N. G. Orji; J. Fu; T. V. Vorburger
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In-line AFM characterization of STI profile at the 65 nm node with advanced carbon probes
Author(s): Massimo D. Sardo; Audrey Berthoud; Jean-Claude Royer; Christian Kusch
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Impact of thin film metrology on the lithographic performance of 193-nm bottom antireflective coatings
Author(s): Chris A. Mack; Dale Harrison; Cristian Rivas; Phillip Walsh
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Dielectric-thickness dependence of damage induced by electron-beam irradiation of MNOS gate pattern
Author(s): Miyako Matsui; Toshiyuki Mine; Kazuyuki Hozawa; Kikuo Watanabe; Jiro Inoue; Hiroshi Nagaishi
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OPC model data collection for 45-nm technology node using automatic CD-SEM offline recipe creation
Author(s): Daniel Fischer; Mohamed Talbi; Alex Wei; Ovadya Menadeva; Roger Cornell
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Line width measurement below 60nm using an optical interferometer and artificial neural network
Author(s): Chung W. See; Richard J. Smith; Michael G. Somekh; Andrew Yacoot
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Metrology challenges for advanced lithography techniques
Author(s): Ilan Englard; Peter Vanoppen; Jo Finders; Ingrid Minnaert-Janssen; Frank Duray; Jeroen Meessen; Gert-Jan Janssen; Ofer Adan; Liraz Gershtein; Ram Peltinov; Claudio Masia; Richard Piech
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Transition from precise to accurate critical dimension metrology
Author(s): Vladimir A. Ukraintsev; Margaret C. Tsai; Tom Lii; Ricky A. Jackson
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Device metrology with high-performance scanning ion beams
Author(s): David C. Joy; Brendan J. Griffin; John Notte; Lewis Stern; Shawn McVey; Bill Ward; Clarke Fenner
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Beyond measurement uncertainty: improving the productivity of metrology tools through recipe error analysis
Author(s): Eric Solecky; Anas Bennasser; Erwin Weissmann
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Realizing "value-added" metrology
Author(s): Benjamin Bunday; Pete Lipscomb; John Allgair; Dilip Patel; Mark Caldwell; Eric Solecky; Chas Archie; Jennifer Morningstar; Bryan J. Rice; Bhanwar Singh; Jason Cain; Iraj Emami; Bill Banke; Alfredo Herrera; Vladamir Ukraintsev; Jerry Schlessinger; Jeff Ritchison
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Enabling immersion lithography and double patterning
Author(s): Kevin M. Monahan; Amir Widmann
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Correlation length and the problem of line width roughness
Author(s): V. Constantoudis; G. P. Patsis; E. Gogolides
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Characterization of line-edge roughness in Cu/low-k interconnect pattern
Author(s): Atsuko Yamaguchi; Daisuke Ryuzaki; Jiro Yamamoto; Hiroki Kawada; Takashi Iizumi
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Impact of acid diffusion length on resist LER and LWR measured by CD-AFM and CD-SEM
Author(s): J. Foucher; A. Pikon; C. Andes; J. Thackeray
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Advanced edge roughness measurement application for mask metrology
Author(s): Thomas Marschner; Jan Richter; Uwe Dersch; Amit Moran; Ruthy Katz; David Chase; Reuven Falah; Thomas Coleman
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SEM metrology for advanced lithographies
Author(s): Benjamin Bunday; John Allgair; Bryan J. Rice; Jeff Byers; Yohanan Avitan; Ram Peltinov; Maayan Bar-zvi; Ofer Adan; John Swyers; Roni Z. Shneck
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Scatterometry on pelliclized masks: an option for wafer fabs
Author(s): Emily Gallagher; Craig Benson; Masaru Higuchi; Yasuhiro Okumoto; Michael Kwon; Sanjay Yedur; Shifang Li; Sangbong Lee; Milad Tabet
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Development of advanced mask inspection optics with transmitted and reflected light image acquisition
Author(s): Ryoichi Hirano; Riki Ogawa; Hitoshi Suzuki; Kenichi Takahara; Yoshitake Tsuji; Shingo Murakami; Nobutaka Kikuiri; Kinya Usuda
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Real time monitoring of reticle etch process tool to investigate and predict critical dimension performance
Author(s): Rick Deming; Karmen Yung; Mark Guglielmana; Dan Bald; Kiho Baik; Frank Abboud
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CAD-based line/space mix-up prevention for reticle metrology
Author(s): Thomas Marschner; Maik Enger; Frank Ludewig; Reuven Falah; Sergey Latinsky; Ofer Lindman; Thomas Coleman
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Aspects and new developments on edge angle and edge profile metrology at PTB
Author(s): Bernd Bodermann; Egbert Buhr; Alexander Diener; Kai Dirscherl; Gerd Ehret; Carl Georg Frase; Matthias Wurm
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Study of rigorous effects and polarization on phase shifting masks through simulations and in-die phase measurements
Author(s): Kyung M. Lee; Malahat Tavassoli; Max Lau; Kiho Baik; Barry Lieberman; Sascha Perlitz; Ute Buttgereit; Thomas Scherübl
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Advances in process overlay: alignment solutions for future technology nodes
Author(s): Henry Megens; Richard van Haren; Sami Musa; Maya Doytcheva; Sanjay Lalbahadoersing; Marc van Kemenade; Hyun-Woo Lee; Paul Hinnen; Frank van Bilsen
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Algorithm for lithography advanced process control system for high-mix low-volume products
Author(s): Eiichi Kawamura
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Advanced process control with design-based metrology
Author(s): Hyunjo Yang; Jungchan Kim; Jongkyun Hong; Donggyu Yim; Jinwoong Kim; Toshiaki Hasebe; Masahiro Yamamoto
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Investigation of optimized wafer sampling with multiple integrated metrology modules within photolithography equipment
Author(s): Ted L. Taylor; Eri Makimura
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Advanced lithography parameters extraction by using scatterometry system
Author(s): Wenzhan Zhou; Minghao Tang; Huipeng Koh; Meisheng Zhou
Show Abstract
Line edge roughness impact on critical dimension variation
Author(s): Yuansheng Ma; Harry J. Levinson; Thomas Wallow
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Predicting electrical measurements by applying scatterometry to complex spacer structures
Author(s): Matthew Sendelbach; Javier Ayala; Pedro Herrera
Show Abstract
Characterization of bending CD errors induced by resist trimming in 65 nm node and beyond
Author(s): Yiming Gu; James B. Friedmann; Vladimir Ukraintsev; Gary Zhang; Thomas Wolf; Tom Lii; Ricky Jackson
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Across-wafer CD uniformity control through lithography and etch process: experimental verification
Author(s): Qiaolin Zhang; Cherry Tang; Jason Cain; Angela Hui; Tony Hsieh; Nick Maccrae; Bhanwar Singh; Kameshwar Poolla; Costas J. Spanos
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Characterization of capacitive 3D deep trench mask open structures using scatterometry
Author(s): Shahin Zangooie; Pedro Herrera; Abebe Mesfin; Chas Archie; Matthew Sendelbach
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Image analysis of alignment and overlay marks with compound structure
Author(s): Roman Chalykh; Irina Pundaleva; Jang-Ho Shin; Seong-Sue Kim; Han-Ku Cho; Joo-Tae Moon
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Methodical approach to improve defect detection sensitivity on lithography process using DUV inspection system
Author(s): Changgoo Lee; Sera Won; Daeyoung Seo; Hyeonsoo Kim; Jinwoong Kim; Jeong-Ho Yeo; Ido Dolev; Chan-Hee Kwak
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Etch process monitoring by electron beam wafer inspection
Author(s): Luke Lin; Jia-Yun Chen; Wen-Yi Wong; Mark McCord; Alex Tsai; Steven Oestreich; Indranil De; Jan Lauber; Andrew Kang
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Immersion-induced defect SEM-based library for fast baseline improvement and excursion
Author(s): Ilan Englard; Raf Stegen; Erik Van Brederode; Peter Vanoppen; Ingrid Minnaert-Janssen; Frank Duray; Ted der Kinderen; Gazi Tanriseven; Inge Lamers; Mireia Blanco Mantecon; Lior Levin; Eitan Binyamini; Nurit Raccah; Shalev Dror; Eran Valfer; Ofer Rotlevi; Robert Schreutelkamp; Rich Piech
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Novel technology of automatic macro inspection for 32-nm node and best focus detection
Author(s): Kazuhiko Fukazawa; Kazumasa Endo; Kiminori Yoshino; Yuichiro Yamazaki
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Results from a new die-to-database reticle inspection platform
Author(s): William Broadbent; Yalin Xiong; Michael Giusti; Robert Walsh; Aditya Dayal
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Inspection sensitivity improvement through optimization of lobe blocking on high-end memory devices
Author(s): Changgoo Lee; Sera Won; Daeyoung Seo; Hyeonsoo Kim; Jinwoong Kim; Jeong-Ho Yeo; Ido Dolev; Chan-Hee Kwak
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Use of automated EBR metrology inspection to optimize the edge bead process
Author(s): Alan Carlson; Tuan Le; Ajay Pai; Joseph Hallen; Bridget Rioux
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High-throughput polarization imaging for defocus and dose inspection for production wafers
Author(s): Gang Sun; Eugene Onoichenco; Yonghuang Fu; Yongqiang Liu; Ricardo Amell; Casey McCandless; Rajasekar Reddy; Gidesh Kumar; Max Guest
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Real-time spatial control of photoresist development rate
Author(s): Arthur Tay; Weng-Khuen Ho; Ni Hu; Choon-Meng Kiew; Kuen-Yu Tsai
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A predictive method to forecast spatial variability of stochastic processes for deep nanoscale semiconductor manufacturing
Author(s): Yijian Chen
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Advanced process control for hyper-NA lithography based on CD-SEM measurement
Author(s): T. Ishimoto; K. Sekiguchi; N. Hasegawa; T. Maeda; K. Watanabe; G. Storms; D. Laidler; S. Cheng
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Application of integrated scatterometry (iODP) to detect and quantify resist profile changes due to resist batch changes in a production environment
Author(s): Shahzad Ali; Linda Chen; Jason Tiffany; Anurag Yadav; Bryan Swain; David Dixon; Stephen Lickteig
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Litho cell control using MPX
Author(s): Eric Apelgren; Harold Kennemer; Chris Nelson; Brad Eichelberger; John Robinson
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Data sharing system for lithography APC
Author(s): Eiichi Kawamura; Yoshiharu Teranishi; Masanori Shimabara
Show Abstract
CD measurement in flash memory using substrate current technology
Author(s): Yeong-Uk Ko; Keizo Yamada; Takeo Ushiki
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Overlay metrology for dark hard mask process: simulation and experiment study
Author(s): Jangho Shin; Roman Chalykh; Hyunjae Kang; SeongSue Kim; SukJoo Lee; Han-Ku Cho
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In-chip overlay metrology of 45nm and 55nm processes
Author(s): Y. S. Ku; C. H. Tung; Y. P. Li; H. L. Pang; C. M. Ke; Y. H. Wang; D. C. Huang; N. P. Smith; L. Binns
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Evaluation of AIM overlay mark for thin film head application
Author(s): Yi Li; Alan Fan; Gary Etheridge; Gerald Finken; Darrel Louder
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Through-focus technique for overlay metrology
Author(s): An-Shun Liu; Yi-Sha Ku; Nigel Smith
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Improvement of front-end process overlay in 60nm DRAM
Author(s): Young-Sun Hwang; Won-Kwang Ma; Eung-Kil Kang; Chang-Moon Lim; Seung-Chan Moon; Sang-Jin An; Kyu-Kab Rhe
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Hardware, materials, and parameters optimization for improvement of immersion overlay
Author(s): Won-Kwang Ma; Young-sun Hwang; Eung-kil Kang; Sarohan Park; Jung-Hyun Kang; Chang-moon Lim; Seung-chan Moon
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Improved overlay control through automated high order compensation
Author(s): S. Wakamoto; Y. Ishii; K. Yasukawa; A. Sukegawa; S. Maejima; A. Kato; J. C. Robinson; B. J. Eichelberger; P. Izikson; M. Adel
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45nm design rule in-die overlay metrology on immersion lithography processes
Author(s): Yu-Hao Shih; George KC Huang; Chun-Chi Yu; Mike Adel; Chin-Chou Kevin Huang; Pavel Izikson; Elyakim Kassel; Sameer Mathur; Chien-Jen Huang; David Tien; Yosef Avrahamov
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Say good-bye to DOF: statistical process window analysis with inline lithographic process variations
Author(s): Wenzhan Zhou; Minghao Tang; Huipeng Koh; Meisheng Zhou
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Use of in-line AFM as LWR verification tool in 45nm process development
Author(s): Ming Hsun Hsieh; Kun Ho Shi; J. H. Yeh; Ruei Hung Hsu; Mingsheng Tsai; S. F. Tzou
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Die-to-database verification tool for detecting CD errors, which are caused by OPC features, by using mass gate measurement and layout information
Author(s): Tadashi Kitamura; Toshiaki Hasebe; Kazufumi Kubota; Futoshi Sakai; Shinichi Nakazawa; David Lin; Michael J. Hoffman; Masahiro Yamamoto; Masahiro Inoue
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Major trends in extending CD-SEM utility
Author(s): Benjamin Bunday; John Allgair; Kyoungmo Yang; Shunsuke Koshihara; Hidetoshi Morokuma; Alex Danilevsky; Cindy Parker; Lorena Page
Show Abstract
The coming of age of tilt CD-SEM
Author(s): B. Bunday; J. Allgair; E. Solecky; C. Archie; N. G. Orji; J. Beach; O. Adan; R. Peltinov; M. Bar-zvi; J. Swyers
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Stochastic simulation of material and process effects on the patterning of complex layouts
Author(s): N. Tsikrikas; D. Drygiannakis; G. P. Patsis; G. Kokkoris; I. Raptis; E. Gogolides
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MacroCD contact ellipticity measurements for lithography tool qualification
Author(s): Ilan Englard; Eelco van Setten; Gert-Jan Janssen; Peter Vanoppen; Ingrid Minnaert-Janssen; Frank Duray; Ofer Adan; Amit Moran; Liraz Gershtein; Ram Peltinov
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Sub-nanometer CD-SEM matching
Author(s): Travis Lott; Russell J. Elias
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Visible light angular scatterometry for nanolithography
Author(s): Rayan M. Al-Assaad; Li Tao; Wenchuang Hu
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Robust sub-50-nm CD control by a fast-goniometric scatterometry technique
Author(s): Jérôme Hazart; Pierre Barritault; Stéphanie Garcia; Thierry Leroux; Pierre Boher; Koichi Tsujino
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Accurate and reliable optical CD of MuGFET down to 10nm
Author(s): P. Leray; G. F. Lorusso; S. Cheng; N. Collaert; M. Jurczak; S. Shirke
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OCD metrology by floating n/k
Author(s): Shinn-Sheng Yu; Jacky Huang; Chih-Ming Ke; Tsai-Sheng Gau; Burn J. Lin; Anthony Yen; Lawrence Lane; Vi Vuong; Yan Chen
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High-resolution in-die metrology using beam profile reflectometry and ellipsometry
Author(s): Chungsam Jun; Jangik Park; Jon Opsal; Heath Pois; In-Kyo Kim; Jung-Wook Kim; Lena Nicolaides
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The study to enhance the mask global CD uniformity by removing local CD variation
Author(s): Yongkyoo Choi; Munsik Kim; Oscar Han
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Achievement of sub nanometer reproducibility in line scale measurements with the nanometer comparator
Author(s): Rainer Köning; Jens Flügge; Harald Bosse
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Aera193i: aerial imaging mask inspection for immersion lithography
Author(s): Yoel Zabar; Chaim Braude; Shmoolik Mangan; Dan Rost; Raunak Mann
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Critical dimension measurements on phase-shift masks using an optical pattern placement metrology tool
Author(s): Hermann Bittner; Dieter Adam; Jochen Bender; Artur Boesser; Michael Heiden; Klaus-Dieter Roeth
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Comparison of back side chrome focus monitor to focus self-metrology of an immersion scanner
Author(s): Koen D'havé; Takahiro Machida; David Laidler; Shaunee Cheng
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Novel CD-SEM calibration reference consisting of 100-nm pitch grating and positional identification mark
Author(s): Yoshinori Nakayama; Hiroki Kawada; Shozo Yoneda; Takeshi Mizuno
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Advanced CD-AFM probe tip shape characterization for metrology accuracy and throughput
Author(s): Hao-Chih Liu; Jason R. Osborne; Marc Osborn; Gregory A. Dahlen
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TEM validation of CD AFM image reconstruction
Author(s): Gregory A. Dahlen; Lars Mininni; Marc Osborn; Hao-Chih Liu; Jason R. Osborne; Bryan Tracy; Amalia del Rosario
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An advanced AFM sensor: its profile accuracy and low probe wear property for high aspect ratio patterns
Author(s): Masahiro Watanabe; Shuichi Baba; Toshihiko Nakata; Toru Kurenuma; Yuichi Kunitomo; Manabu Edamura
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Improved dimension and shape metrology with versatile atomic force microscopy
Author(s): Mark Caldwell; Tianming Bao; John Hackenberg; Brian McLain; Omar Munoz; Tab Stephens; Victor Vartanian
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New inline AFM metrology tool suited for LSI manufacturing at the 45-nm node and beyond
Author(s): Manabu Edamura; Yuichi Kunitomo; Takafumi Morimoto; Satoshi Sekino; Toru Kurenuma; Yukio Kembo; Masahiro Watanabe; Shuichi Baba; Kishio Hidaka
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Magnification calibration standards for sub-100nm metrology
Author(s): Sachin Deo; David Joy
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Advances in CD-AFM scan algorithm technology enable improved CD metrology
Author(s): Lars Mininni; Johann Foucher; Pascal Faurie
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Plasma-assisted cleaning by electrostatics (PACE)
Author(s): W. M. Lytle; H. Shin; D. N. Ruzic
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Optical characterization of microstructures of high aspect ratio
Author(s): T. Tamulevicius; S. Tamulevicius; M. Andrulevicius; G. Janusas; V. Ostasevicius; A. Palevicius
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Contrarian approach to and ultimate solution for 193nm reticle haze
Author(s): Oleg Kishkovich; Anatoly Grayfer; Frank V. Belanger
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Thermal imaging of a lithography cell, including exposure tool, using a self-contained instrumented wafer
Author(s): Zach Reid; Mark Wiltse; Sandy Burgan; Gregory Roche
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Optimization of lithography process to improve image deformation of contact hole sub-90 nm technology node
Author(s): Sungho Jun; Juhyun Kim; Eunsoo Jeong; Youngje Yun; Jaehee Kim; Keeho Kim
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Resolution enhancement technique using oxidation process with nitride hardmask process
Author(s): Eunsoo Jeong; Jaehee Kim; Keeho Kim; Daeyoung Kim; Hyunju Lim
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Enhanced hole shape of flash devices in ArF lithography by eliptical mask bias technique
Author(s): Young-Doo Jeon; Sungho Jun; Jae-Hyun Kang; Sang-Uk Lee; Jeahee Kim; Keeho Kim
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Purge micro-environment with ionized air to reduce chances of ESD damages to wafers
Author(s): Huaping Wang; Yingkai Liu; Mike Cisewski
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Monitoring airborne molecular contamination: a quantitative and qualitative comparison of real-time and grab-sampling techniques
Author(s): Aaron M. Shupp; Dan Rodier; Steven Rowley
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Optimizing surface finishing processes through the use of novel solvents and systems
Author(s): M. Quillen; P. Holbrook; J. Moore
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New filter media development for effective control of trimethysilanol (TMS) and related low molecular weight silicon containing organic species in the photobay ambient
Author(s): Anatoly Grayfer; Frank V. Belanger; Phillip Cate; David Ruede
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Non-contacting electrostatic voltmeter for wafer potential monitoring
Author(s): Maciej A. Noras; William A. Maryniak
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Optimized molecular contamination monitoring for lithography
Author(s): D. Rodier
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The novel advanced process control to eliminate AlCu-PVD induced overlay shift
Author(s): CH Huang; CC Yang; Elvis Yang; TH Yang; KC Chen; Joseph Ku; CY Lu
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Low-pressure drop filtration of airborne molecular organic contaminants using open-channel networks
Author(s): Andrew J. Dallas; Jon Joriman; Lefei Ding; Gerald Weineck; Kevin Seguin
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Novel method of under-etch defect detection for contact layers based on Si substrate using optic wafer inspection tools
Author(s): Byoung-Ho Lee; Jin-Seo Choi; Soo-Bok Chin; Do-Hyun Cho; Chang-Lyong Song
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CD-bias evaluation and reduction in CD-SEM linewidth measurements
Author(s): Maki Tanaka; Chie Shishido; Wataru Nagatomo; Kenji Watanabe
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Ellipsometric studies of the absorption of liquid by photo resist
Author(s): Hee Jeong; Jaesun Kyung; Songyi Park; Kiyong Lee; Hyungjoo Lee; Hyuknyeong Cheon; Ilsin An; Sook Lee
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Advanced defect definition method using design data
Author(s): Kyuhong Lim; Dilip Patel; Kyoungmo Yang; Shunsuke Koshihara; Lorena Page; Andy Self; Maurilio Martinez
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Image quality improvement in inspection systems using double integrator illumination
Author(s): Akira Takada; Hitoshi Suzuki; Toru Tojo; Masato Shibuya
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Study of ADI (After Develop Inspection) on photo resist wafers using electron beam (II)
Author(s): Teruyuki Hayashi; Misako Saito; Kaoru Fujihara; Setsuko Shibuya; Y. Kudou; Hiroshi Nagaike; Joseph Lin; Jack Jau
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3D anisotropic semiconductor grooves measurement simulations (scatterometry) using FDTD methods
Author(s): Hirokimi Shirasaki
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Metrology of replicated diffractive optics with Mueller polarimetry in conical diffraction
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