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Vertical-Cavity Surface-Emitting Lasers XI
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Volume Details

Volume Number: 6484
Date Published: 6 February 2007

Table of Contents
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Front Matter: volume 6484
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Design and manufacturing of 10G GenX VCSELs at Emcore
Author(s): Nein-Yi Li; Doug Collins; Shashank Jatar; Olga Lavrova; Chris Helms; Wenlin Luo; Linlin Liu; Chiyu Liu; Mei Qiu; Kent Roff; Charlie Wang; Chia-Chun Yang; Hwann-Kaeo Chiou
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VCSEL proliferation
Author(s): Jim Tatum
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High output power 670nm VCSELs
Author(s): Klein Johnson; Mary Hibbs-Brenner
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A TCAD approach to robust ESD design in oxide-confined VCSELs
Author(s): Hektor Meier; Rafael Santschi; Stefan Odermatt; Bernd Witzigmann; Sven Eitel; Franck Nallet; Gergö Letay
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VCSELs for atomic sensors
Author(s): D. K. Serkland; K. M. Geib; G. M. Peake; R. Lutwak; A. Rashed; M. Varghese; G. Tepolt; M. Prouty
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New markets for VCSELS: pulsed operation of high-power devices
Author(s): Martin Grabherr; Michael Miller; Dieter Wiedenmann; Roland Jäger; Roger King
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Heterogenous integrated waveguide-coupled VCSEL-based optical interconnects
Author(s): Julian Cheng; Kai Yang; K. M. Patel; T. J. Eustis; D. A. Louderback; X. J. Jin; C. Y. Chao; J. Schoengarth; P. S. Guilfoyle; M.-Y. Shih
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Monolithic integration of VCSELs and MSM photodiodes for bidirectional multimode fiber communications
Author(s): Rainer Michalzik; Martin Stach; Fernando Rinaldi; Steffen Lorch
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Modulation properties of VCSEL with intracavity modulator
Author(s): J. van Eisden; M. Yakimov; V. Tokranov; M. Varanasi; E. M. Mohammed; I. A. Young; S. Oktyabrsky
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Demonstration of all optical logic gates by single/differential typed vertical cavity laser with depleted optical thyristor
Author(s): Woon-Kyung Choi; Doo-Gun Kim; Yon-Tae Moon; Do-Gyun Kim; Hoseong Kim; Tae Kyung Chung; Young-Wan Choi; Kent D. Choquette; Seok Lee; Deok-Ha Woo
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Fabrication and characterization of individually addressable vertical-cavity surface-emitting laser arrays and integrated VCSEL/PIN detector arrays
Author(s): A. M. Kasten; A. V. Giannopoulos; C. Long; C. Chen; K. D. Choquette
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Low-threshold current low-resistance 1.3 µm InAs–InGaAs quantum-dot VCSELs with fully doped DBRs grown by MBE
Author(s): Hsin-Chieh Yu; Jyh-Shyang Wang; Yan-Kuin Su; Shoou-Jinn Chang; Hao-Chung Kuo; Fang-I Lai; Y. H. Chang; Hong-Pin D. Yang
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1.3 µm VCSELs: InGaAs/GaAs, GaInNAs/GaAs multiple quantum wells, and InAs/GaAs quantum dots — three candidates as active material
Author(s): Ph. Gilet; E. Pougeoise; L. Grenouillet; Ph. Grosse; N. Olivier; S. Poncet; A. Chelnokov; J. M. Gérard; R. Stevens; R. Hamelin; M. Hammar; J. Berggren; P. Sundgren
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1.55µm InP-based electrically pumped VECSELs: comparison of buried and implanted tunnel junctions as current confinement schemes for the realization of large diameter devices
Author(s): A. Bousseksou; S. Bouchoule; M. El Kurdi; I. Sagnes; G. Beaudoin; P. Crozat; J. Jacquet
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Numerical simulation of temperature-dependence on distributed Bragg reflector (DBR) and performance analyses for proton-implant/oxide confined VCSEL: comparison with transmission matrix, matrix calculating methods, and Macleod model
Author(s): Hong-Mau Tsai; Shiang-Feng Tang; Shih-Tsang Sua; Tzu-Chiang Chen; Cheng-Der Chiang
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Progress and issues for high-speed vertical cavity surface emitting lasers
Author(s): Kevin L. Lear; Ahmad N. Al-Omari
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Characterization of 1.55 µm VCSELs using high-resolution and high-dynamic range measurements of the CW optical spectrum
Author(s): Asier Villafranca; Javier Lasobras; Ignacio Garcés
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Single-mode proton-implanted photonic crystal VCSELs
Author(s): Paul O. Leisher; Chen Chen; Dominic F. Siriani; Joshua D. Sulkin; Kent D. Choquette
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