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Proceedings of SPIE Volume 6473

Gallium Nitride Materials and Devices II
Editor(s): Hadis Morkoc; Cole W. Litton
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Volume Details

Volume Number: 6473
Date Published: 7 February 2007
Softcover: 49 papers (468) pages
ISBN: 9780819465863

Table of Contents
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Front Matter: Volume 6473
Author(s): Proceedings of SPIE
New possibility of MOVPE-growth in GaN and InN: polarization in GaN and nitrogen-incorporation in InN
Author(s): Takashi Matsuoka
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Two-step epitaxial lateral overgrowth of a-plane GaN by MOCVD
Author(s): X. Ni; Ü. Özgür; H. Morkoç; A. A. Baski; Z. Liliental-Weber; H. O. Everitt
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Low dislocation density GaN grown by MOCVD with SiNx nano-network
Author(s): J. Xie; Ü. Özgür; Y. Fu; X. Ni; H. Morkoç; C. K. Inoki; T. S. Kuan; J. V. Foreman; H. O. Everitt
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Enhanced luminescence from AlxGa1-xN/AlyGa1-yN quantum wells grown by gas source molecular beam epitaxy with ammonia
Author(s): Sergey A. Nikishin; Boris A. Borisov; Gregory A Garrett; Wendy L. Sarney; Anand V. Sampath; Hongen Shen; Michael Wraback; Mark Holtz
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Narrow-width photoluminescence spectra of InGaN quantum wells grown on GaN (0001) substrates with misorientation toward [1100] direction
Author(s): Koichi Tachibana; Hajime Nago; Shin-ya Nunoue
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AFM and CAFM studies of ELO GaN films
Author(s): V. Kasliwal; J. C. Moore; X. Ni; H. Morkoç; A. A. Baski
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Magneto-transport properties of MOVPE-grown AlxGa1-xN/AlN/GaN heterostructures with high-mobility two-dimensional electron gas
Author(s): N. Biyikli; H. Cheng; Ç. Kurdak; X. Ni; Y. Fu; J. Xie; I. Vurgaftman; J. Meyer; H. Morkoç; C. W. Litton
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Investigation of current voltage characteristics of n-GaN/i-AlxGa1-xN/n-GaN structures
Author(s): X. Ni; J. Xie; Y. Fu; H. Morkoç; I. P. Steinke; Y. Liu; P. P. Ruden; K.-A. Son; B. Yang
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Wide bandgap UV photodetectors: a short review of devices and applications
Author(s): Franck Omnès; Eva Monroy; Elias Muñoz; Jean-Luc Reverchon
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Spontaneous polarizations, electrical properties, and phononic properties of GaN nanostructures and systems
Author(s): Takayuki Yamanaka; Ke Sun; Yang Li; Mitra Dutta; Michael A. Stroscio
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Summary of deep level defect characteristics in GaN and AlGaN
Author(s): Daniel Johnstone
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Interplay of Ga vacancies, C impurities, and yellow luminescence in GaN
Author(s): F. Reurings; F. Tuomisto
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Quantum 1/f noise in GaN FETs, HFETs, MODFETs, and their oscillators' phase noise
Author(s): Peter H. Handel; Amanda M. Hall; Hadis Morkoç
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Accumulation of hot phonons in GaN and related structures
Author(s): Arvydas Matulionis; Ilona Matulionien?
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Subpicosecond time-resolved Raman studies of LO phonons in GaN
Author(s): K. T. Tsen; Juliann G. Kiang; D. K. Ferry; H. Morkoç
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InGaN/GaN nanocolumn LEDs emitting from blue to red
Author(s): K. Kishino; A. Kikuchi; H. Sekiguchi; S. Ishizawa
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Nitride-based light-emitting diodes with p-AlInGaN surface layers prepared at various temperatures
Author(s): C. W. Kuo; C. M. Chen; C. H. Kuo; G. C. Chi
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AlGaN-based deep ultraviolet light emitting diodes with reflection layer
Author(s): M. Khizar; Yaskin M. Akhtar Raja
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Recent achievements of AlInGaN based laser diodes in blue and green wavelength
Author(s): T. Jang; O. H. Nam; K. H. Ha; S. N. Lee; J. K. Son; H. Y. Ryu; K. S. Kim; H. S. Paek; Y. J. Sung; H. G. Kim; S. H. Chae; Y. H. Kim; Y. Park
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Long lifetime cw InGaN laser diodes by molecular beam epitaxy
Author(s): M. Kauer; W. S. Tan; S. E. Hooper; J. M. Barnes; J. Heffernan
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Degradation studies of InGaN/GaN heterostructure laser diodes using a Kelvin Force Microscope
Author(s): André Lochthofen; Wolfgang Mertin; Gerd Bacher; Michael Furitsch; Georg Brüderl; Berthold Hahn; Uwe Strauss; Volker Härle
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The influence of alloy disorder and hydrostatic pressure on electrical and optical properties of In-rich InGaN compounds
Author(s): T. Suski; G. Franssen; A. Kamińska; A. Khachapuridze; H. Teisseyre; J. A. Plesiewicz; L. H. Dmowski; H. Lu; W. J. Schaff; M. Kurouchi; Y. Nanishi
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Defect studies in HVPE GaN by positron annihilation spectroscopy
Author(s): Filip Tuomisto
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Lanthanide impurity level location in GaN, AlN, and ZnO
Author(s): P. Dorenbos; E. van der Kolk
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AlGaN/GaN field-plate FETs for microwave power applications
Author(s): H. Miyamoto; Y. Ando; Y. Okamoto; T. Nakayama; A. Wakejima; T. Inoue; Y. Murase; K. Ota; K. Yamanoguchi; N. Kuroda; M. Tanomura; K. Matsunaga
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Insulator engineering in GaN-based MIS HFETs
Author(s): Narihiko Maeda; Masanobu Hiroki; Noriyuki Watanabe; Yasuhiro Oda; Haruki Yokoyama; Takuma Yagi; Toshiki Makimoto; Takatomo Enoki; Takashi Kobayashi
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Thermal analysis of AlGaN/GaN HFETs using electro-thermal simulation and micro-Raman spectroscopy
Author(s): Tatsuya Fujishima; Kaoru Inoue; Kenichi Kosaka; Akihiro Hinoki; Tomoyuki Yamada; Tadayoshi Tsuchiya; Junjiroh Kikawa; Shinichi Kamiya; Akira Suzuki; Tsutomu Araki; Yasushi Nanishi
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Epitaxial growth and characterization of AlGaN/GaN HEMT devices on SiC substrates for RF applications
Author(s): Ashok K. Sood; Yash R. Puri; Frederick W. Clarke; Jie Deng; James C. M. Hwang; Steven K. Brierley; M. Asif Khan; Amir Dabiran; Peter Chow; Oleg A. Laboutin; Roger E. Welser
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TM-mode lasing and anisotropic polarization properties of AlGaN multiple quantum well lasers in deep-ultraviolet spectral region
Author(s): Hideo Kawanishi; Masanori Senuma; Takeaki Nukui
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Comparison of optical properties of InGaN/GaN/AlGaN laser structures grown by MOVPE and MBE
Author(s): T. Swietlik; C. Skierbiszewski; R. Czernecki; G. Franssen; P. Wisniewski; M. Leszczynski; I. Grzegory; P. Mensz; T. Suski; P. Perlin
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Progress in etched facet technology for GaN and blue lasers
Author(s): Alfred Schremer; Cristian Stagarescu; Jeff Hwang; Fareen Khaja; Vinu Vainateya; Alan Morrow; Alex Behfar
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High quality UV AlGaN/AlGaN distributed Bragg reflectors and microcavities
Author(s): Oleg Mitrofanov; S. Schmult; M. J. Manfra; T. Siegrist; N. G. Weimann; A. M. Sergent; R. J. Molnar
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Structural characterization of III-nitrides using electron microscopy
Author(s): David J. Smith; Lin Zhou; Martha R. McCartney
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Characterization of transient behavior of AlGaN/GaN HEMTs
Author(s): T. Mizutani
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Charge trapping on defects in AlGaN/GaN field effect transistors
Author(s): Oleg Mitrofanov; M. J. Manfra
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Analytical model, simulation, and parameter extraction of AIGaN/GaN HEMT for microwave circuit applications
Author(s): Hasina F. Huq; Syed K. Islam
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1/f noise in the dark current of GaN QWIPs
Author(s): Amanda M. Hall; Peter H. Handel
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Light extraction analysis for GaN-based LEDs
Author(s): Tung-Xian Lee; Kuo-Fong Go; Te-Yuan Chung; Ching-Cherng Sun
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Convergence of optical spectroscopic system for characterization of InGaN/GaN multi-quantum well light-emitting diodes
Author(s): June-Sik Park; Dong-Yul Lee; Sangsu Hong; Je-Won Kim; Bae-Kyun Kim
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Confocal scanning electroluminescence spectro-microscope for multidimensional light-emitting property analysis
Author(s): S. Hong; G. Onushkin; J. S. Park; B. K. Kim; D.-Y. Lee; A. Fomin; K. Ko; J. W. Kim
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Point defect reduction in GaN layers grown with the aid of SiNx nanonet by metalorganic chemical vapor deposition
Author(s): S. A. Chevtchenko; J. Xie; Y. Fu; X. Ni; H. Morkoç; C. W. Litton
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Characterization of the carrier dynamics and interface-state charge fluctuations in quaternary AlInGaN multiple quantum well heterostructures
Author(s): Chih-Chun Ke; Cheng-Wei Hung; Da-Chuan Kuo; Wei-Jen Chen; Hui-Tang Shen; Ya-Fen Wu; Jen-Cheng Wang; Tzer-En Nee
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Optical properties of Berthelot-type behaviors in quaternary AlInGaN multiple quantum well heterostructures
Author(s): Cheng-Wei Hung; Chih-Chun Ke; Da-Chuan Kuo; Wei-Jen Chen; Hui-Tang Shen; Ya-Fen Wu; Jen-Cheng Wang; Tzer-En Nee
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Characterization of the carrier localization confinement for InGaN/GaN multiple quantum well heterostructures with hydrogen-flow treatments
Author(s): Ta-Chuan Kuo; Wei-Jen Chen; Chih-Chun Ke; Cheng-Wei Hung; Hui-Tang Shen; Jen-Cheng Wang; Ya-Fen Wu; Tzer-En Nee
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AlGaN/GaN MODFET regrown by rf-MBE on MOCVD templates
Author(s): J. Xie; H. Morkoç; L. Zhou; D. J. Smith
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AlGaN/GaN MOS transistors using crystalline ZrO2 as gate dielectric
Author(s): Xing Gu; Natalia Izyumskaya; Vitaly Avrutin; Jinqiao Xie; Serguei Chevtchenko; Bo Xiao; Hadis Morkoç
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Nanoheteroepitaxy of GaN on columnar SiC substrates by metalorganic chemical vapor deposition
Author(s): Yi Fu; Ü. Özgür; Q. Fan; N. Biyikli; S. Chevtchenko; H. Morkoç; You Ke; Robert Devaty; W. J. Choyke; C. K. Inoki; T. S. Kuan
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Growth and polarity control of GaN and AlN on carbon-face SiC by metalorganic vapor phase epitaxy
Author(s): Yi Fu; Q. Fan; S. Chevtchenko; Ü. Özgür; H. Morkoç; You Ke; Robert Devaty; W. J. Choyke; C. K. Inoki; T. S. Kuan
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High reflectivity ultraviolet distributed Bragg reflector based on AlGaN/AlGaN multilayer
Author(s): Ryoko Shimada; Jinqiao Xie; Hadis Morkoç
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