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PROCEEDINGS VOLUME 6260

Micro- and Nanoelectronics 2005
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Volume Details

Volume Number: 6260
Date Published: 22 May 2006
Softcover: 68 papers (610) pages
ISBN: 9780819463258

Table of Contents
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Sources of radiations on the basis of capillary discharges
Author(s): V. A. Burtsev; E. P. Bol'shakov; N. V. Kalinin; V. A. Kubasov; V. I. Chernobrovin
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Current density and exposure sequence effect in electron lithography
Author(s): S. V. Dubonos; M. A. Knyazev; A. A. Svintsov; S. I. Zaitsev
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Ultra shallow <i>p</i>+-<i>n</i> junctions in Si produced by plasma immersion ion implantation
Author(s): K. Rudenko; S. Averkin; V. Lukichev; A. Orlikovsky; A. Pustovit; A. Vyatkin
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Low-temperature annealing of ion-doped layers of silicon in hydrogen atom flow
Author(s): V. Kagadei; E. Nefyodtsev; S. Romanenko
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Formation of conductive structures in insulate layers by selective removal of atoms technique
Author(s): B. Gurovich; K. Prikhodko; A. Domantovsky; E. Kuleshova; E. Olshansky; K. Maslakov; Y. Lunin
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Dense arrays of Ge nanoclusters induced by low-energy ion-beam assisted deposition on Si02 films
Author(s): A. V. Dvurechenskii; P. L. Novikov; Y. Khang; Zh. V. Smagina; V. A. Armbrister; V. G. Kesler; A. K. Gutakovskii
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Diffusion and phase formation in ternary silicate systems framed by an ion bombardment
Author(s): Sergey A. Krivelevich; Eduard Yu. Buchin; Yuri I. Denisenko; Roman V. Selyukov
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Radiation-induced structure modification in monocrystalline silicon under high-energy C6+ irradiation
Author(s): T. S. Balashov; A. A. Golubev; M. A. Kozodaev; S. V. Rogozhkin; A. D. Fertman; V. I. Turtikov; A. G. Zaluzhnyi
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A self-consistent model for the HCl dc glow discharge: plasma parameters and active particles kinetics
Author(s): A. M. Efremov; V. I. Svettsov
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Measurement of polymerizing fluorocarbon plasma parameters: dynamic Langmuir probe technique application
Author(s): A. Miakonkikh; K. Rudenko
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From diffraction grating to photonic crystal: opaque bands formation
Author(s): M. Yu. Barabanenkov; Yu. N. Barabanenkov; S. A. Nikitov
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Boron distribution profiling in asymmetrical n+-p silicon photodiodes and new creation concept of selectively sensitive photoelements for megapixel color photoreceivers
Author(s): V. A. Gergel; A. V. Lependin; Yu. I. Tishin; I. V. Vanyushin; V. A. Zimoglyad
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Optical properties of silicon nanopowders formed using power electron beam evaporation
Author(s): M. D. Efremov; V. A. Volodin; D. V. Marin; S. A. Arzannikova; M. G. Ivanov; S. V. Gorajnov; A. I. Korchagin; V. V. Cherepkov; A. V. Lavrukhin; S. N. Fadeev; R. A. Salimov; S. P. Bardakhanov
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Synthesis of AIIBV semiconductor nanocrystals by electrochemical deposition and SILAR techniques
Author(s): D. A. Kravtchenko; S. A. Gavrilov; A. V. Zheleznyakova; E. V. Vishnikin
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Morphology and structure of PZT films
Author(s): M. V. Silibin; V. M. Roschin; V. B. Yakovlev; M. S. Lovygina
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Silicide/high-k dielectric structures for nanotransistor gates
Author(s): I. A. Horin; A. D. Krivospitsky; A. A. Orlikovsky; A. E. Rogozhin; A. G. Vasiliev
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Degradation of thin copper conductors because of low temperature melting
Author(s): D. G. Gromov; S. A. Gavrilov; E. N. Redichev; A. I. Mochalov; R. M. Ammosov
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Sol-gel derived Sb-doped SnO2/SiO2 nano-composite thin films for gas sensors
Author(s): Zhengtian Gu; Peihui Liang; Weiqing Zhang
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Controlled change of structure and properties of nanometer polymer layers deposited by electron beam polymerization from vapour phase
Author(s): M. A. Bruk; A. V. Spirin; I. A. Volegova; E. N. Zhikharev; V. A. Kal'nov; Yu. K. Godovsky
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Spin relaxation of holes in Ge quantum dots
Author(s): A. F. Zinovieva; A. V. Nenashev; A. V. Dvurechenskii
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Electronic transport through silicon nanocrystals embedded in SiO<sub>2</sub> matrix
Author(s): M. D. Efremov; S. A. Arzhannikova; G. N. Kamaev; G. A. Kachurin; A. V. Kretinin; V. V. Malutina-Bronskaya; D. V. Marin; V. A. Volodin; S. G. Cherkova
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Peculiarities of the electrical characteristics of the pseudomorphous SiGe/Si MODFET structures with a corrugated surface
Author(s): L. K. Orlov; Zs. Horvath; A. V. Potapov; N. L. Ivina; B. Pecz; L. Toth; L. Dobos; V. B. Shevtsov; A. S. Lonchakov
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Controlled interference effects of spatial reproduction and multiplication for electron waves in semiconductor 2D nanostructures
Author(s): V. A. Petrov; A. V. Nikitin
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Surface scattering in SOI field-effect transistor
Author(s): S. D. Ananiev; V. V. V'yurkov; V. F. Lukichev
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Structural and electrophysical properties of pseudomorphic GaAs/InGaAs/GaAs quantum wells: effect of thin central AlAs barrier
Author(s): Ivan S. Vasil'evskii; Vladimir A. Kulbachinskii; Andrei A. Lomov; Rafik M. Imamov; Denis Yu. Prokhorov; Mihael A. Chuev; Galib B. Galiev; Stanislav S. Shirokov
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The influence of relaxation on the structure and boundary shape of adatom islands on an incommensurable substrate
Author(s): Yu. N. Devyatko; S. V. Rogozhkin; A. V. Fadeev
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Influence of thermodiffusion parameters on the concentration profiles
Author(s): Valery I. Rudakov; Vladimir V. Ovcharov
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Josephson junctions with ferromagnetic materials
Author(s): M. Yu. Kupriyanov; A. A. Golubov; M. Siegel
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Nonequilibrium properties of SIS'IS structure under microwave radiation
Author(s): A. V. Semyonov; I. A. Devyatov; M. Yu. Kupriyanov
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Calibration of quantum detector of noise based on a system of asymmetric superconducting loops
Author(s): V. L. Gurtovoi; S. V. Dubonos; A. V. Nikulov; N. N. Osipov; V. A. Tulin
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Sd-exchange switching in magnetic junctions having non-pinned current carrier spins
Author(s): E. M. Epshtein; Yu. V. Gulyaev; P. E. Zilberman
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Moessbauer spectra of nanomagnets within rotating hyperfine field
Author(s): M. A. Chuev; N. P. Aksenova; P. G. Medvedev
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Exchange interactions in a ferrimagnetic ring
Author(s): Victor V. Kostyuchenko; Marina V. Kostyuchenko
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Formation of ordered arrays of Ag nanowires and nanodots on Si(557) surface
Author(s): R. Zhachuk; S. Teys; A. Dolbak; B. Olshanetsky
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Synthesis of nanowires by pulsed current electrodeposition
Author(s): A. N. Belov; S. A. Gavrilov
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Forming matrix nanostructures in silicon
Author(s): A. V. Barkhudarov; S. A. Gavrilov; A. A. Golishnikov; M. G. Putrya
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Ge nanoclusters in GeO2: formation and optical properties
Author(s): E. B. Gorokhov; V. A. Volodin; D. V. Marin; M. D. Efremov; A. G. Cherkov; A. K. Gutakovskii; V. A. Shvets; A. G. Borisov
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Factors effected on nanoporous anodic alumina ordering
Author(s): S. A. Gavrilov; A. V. Zheleznyakova; A. N. Belov; D. Yu. Barabanov; V. I. Shevyakov; E. V. Vishnikin; A. V. Khlynov
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Combined electromagnetic mirror as the probable breakthrough tool in an ion nanotechnology
Author(s): Valery A. Zhukov; Anna V. Zavyalova
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Metrology in linear measurements of nano-object elements
Author(s): Yu. A. Novikov; A. V. Rakov; P. A. Todua
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Simultaneous fitting of several x-ray rocking curves from different crystallographic planes of multilayer heterostructures
Author(s): M. A. Chuev; A. A. Lomov; R. M. Imamov; I. A. Ivanov
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Linear sizes measurements of relief elements with the width less than 100 nm on a SEM
Author(s): Yu. A. Novikov; A. V. Rakov; P. A. Todua
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Structural and nonlinear-optical studies of ultrathin Si/Si0<sub>2</sub> multiple quantum wells
Author(s): Andrei A. Lomov; Arseniy G. Sutyrin; Denis Yu. Prokhorov; Tatyana V. Dolgova; Andrei A. Fedyanin; Oleg A. Aktsipetrov
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Characterization of strained-Si/SiGe/Si heterostructures with capacitance methods
Author(s): Nikolai Yarykin; Renhua Zhang; George Rozgonyi
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Photoluminescence of 2D electronic epsilon-layers in lateral non-homogeneous nano-structures based on GaAs
Author(s): Yu. V. Khabarov; V. V. Kapaev; V. A. Petrov; G. B. Galiev
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Rearrangement of resonant-tunneling structure in the electric field revealed by complementary photoluminescence and vertical transport characterization of the GaAs/AlGaAs long-period superlattices
Author(s): A. A. Belov; A. L. Karuzskii; Yu. A. Mityagin; V. N. Murzin; A. V. Perestoronin; A. A. Pishchulin; A. M. Tskhovrebov
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The surface roughness investigation by the atomic force microscopy, x-ray scattering, and light scattering
Author(s): M. L. Zanaveskin; Yu. V. Grishchenko; A. L. Tolstikhina; V. E. Asadchikov; B. S. Roshchin; V. V. Azarova
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X-band SPDT switch MMIC based on directional coupler key
Author(s): V. G. Mokerov; D. L. Gnatyuk; A. P. Lisitskii
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Non-volatile electrically reprogrammable memory on self-forming conducting nanostructures
Author(s): Victor M. Mordvintsev; Sergey E. Kudrjavtsev; Valeriy L. Levin
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Thermomigration technology for silicon ball grid array package fabrication
Author(s): Vatery I. Rudakov; Boris V. Mochalov; Nikolai I. Plis
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Calculation of secondary charge carrier current in submicron channel MOSFETs at stress regimes of operation
Author(s): Vladimir Borzdov; Fadei Komarov; Oleg Zhevnyak; Vadim Galenchik; Dmitry Pozdnyakov; Andrei Borzdov
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Effective electrostatic discharge protection elements for CMOS circuits
Author(s): V. A. Gergel'; N. M. Gorshkova
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Investigations of bipolar magnetotransistor
Author(s): R. D. Tikhonov
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Combined method of copper electroplating deposition and low temperature melting for damascene technology
Author(s): E. N. Redichev; D. G. Gromov; S. A. Gavrilov; A. I. Mochalov; R. M. Ammosov
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An automatic synthesis method of compact models of integrated circuit devices based on equivalent circuits
Author(s): I. I. Abramov
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Universal MOSFET parameter analyzer
Author(s): A. V. Klekachev; S. N. Kuznetsov; V. B. Pikulev; V. A. Gurtov
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High-speed bistable MEMS commutators
Author(s): E. G. Kostsov; A. A. Kolesnikov
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Use of thermomigration in MEMS technology
Author(s): Eduard Yu. Buchin; Yuri I. Denisenko
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Nonequilibrium diagrammatic technique for nanoscale devices
Author(s): G. I. Zebrev
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Monte Carlo simulation of device structures with one-dimensional electron gas
Author(s): Vladimir Borzdov; Fadei Komarov; Vadim Galenchik; Dmitry Pozdnyakov; Andrey Borzdov; Oleg Zhevnyak
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Complex simulation of electron process of deep submicron MOSFET based on energy balance equation
Author(s): Victor V. Gergel; Marat N. Yakupov
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Compact physical modeling of fully depleted SOI MOSFET
Author(s): G. I. Zebrev; M. S. Gorbunov
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Simulation of physical processes in nanoelectronic devices with the use NANODEV system
Author(s): I. I. Abramov; K. I. Abramov; I. A. Goncharenko; S. A. Ignatenko; A. P. Kazantsev; N. V. Kolomejtseva; A. M. Lavrinovich; S. N. Pavlenok; A. S. Strogova
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Simulation of the vertical MOSFET with electrically variable source-drain junctions
Author(s): I. A. Horin; A. A. Orlikovsky; A. E. Rogozhin; A. G. Vasiliev
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Simulation of RTD with the use of one- and two-band combined models
Author(s): I. I. Abramov; I. A. Goncharenko; N. V. Kolomejtseva
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Improved modeling of the photoconductivity of amorphous semiconductors for the purposes of the microelectronics
Author(s): A. A. Sherchenkov; A. B. Apalkov
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Numerical algorithms for modeling of diffusion of As implanted in Si at low energies and high fluences
Author(s): F. F. Komarov; O. I. Velichko; A. M. Mironov; V. A. Tsurko; G. M. Zayats
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Simulating the process of dielectric substrate surface cleaning in high-voltage gas discharge plasma
Author(s): N. L. Kazanskiy; V. A. Kolpakov; S. V. Kritchevskiy
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