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Proceedings of SPIE Volume 6154

Optical Microlithography XIX
Editor(s): Donis G. Flagello
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Volume Details

Volume Number: 6154
Date Published: 2 April 2006
Softcover: 162 papers (1726) pages
ISBN: 9780819461971

Table of Contents
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From optical proximity correction to lithography-driven physical design (1996-2006): 10 years of resolution enhancement technology and the roadmap enablers for the next decade
Author(s): Luigi Capodieci
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The optics of photomasks: from shadowy past to scattered future
Author(s): Christopher J. Progler
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The lithographic lens: its history and evolution
Author(s): Tomoyuki Matsuyama; Yasuhiro Ohmura; David M. Williamson
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Characterization of imaging performance for immersion lithography at NA=0.93
Author(s): Dario Gil; Jaione Tirapu-Azpiroz; Ryan Deschner; Timothy Brunner; Carlos Fonseca; Jennifer Fullam; Dan Corliss; K. Auschnitt; Peter Vanoppen
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The next phase for immersion lithography
Author(s): Harry Sewell; Jan Mulkens; Diane McCafferty; Louis Markoya; Bob Streefkerk; Paul Graeupner
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Immersion lithography robustness for the C065 node
Author(s): Scott Warrick; Rob Morton; Andrea Mauri; Jean-Damien Chapon; Jerome Belledent; Will Conley; Alex Barr; Kevin Lucas; Cedric Monget; Valerie Plantier; David Cruau; Juan-Manuel Gomez; Emmanuel Sicurani; Jan-Willem Gemmink
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Current status and future prospect of immersion lithography
Author(s): Soichi Owa; Hiroyuki Nagasaka; Katsushi Nakano; Yasuhiro Ohmura
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Evanescent wave imaging in optical lithography
Author(s): Bruce W. Smith; Yongfa Fan; Jianming Zhou; Neal Lafferty; Andrew Estroff
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Enabling the 45nm node by hyper-NA polarized lithography
Author(s): Wim de Boeij; Geert Swinkels; Nicolas Le Masson; Armand Koolen; Henk van Greevenbroek; Michel Klaassen; Mark van de Kerkhof; Koen van Ingen Schenau; Laurens de Winter; Martijn Wehrens; Steve Hansen; Christian Wagner
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Effect of azimuthally polarized illumination imaging on device patterns beyond 45nm node
Author(s): Ken Ozawa; Boontarika Thunnakart; Tokihisa Kaneguchi; Isao Mita; Atsushi Someya; Toshiharu Nakashima; Hisashi Nishinaga; Yasushi Mizuno; Tomoyuki Matsuyama; Masato Hamatani
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Experimental verification of PSM polarimetry: monitoring polarization at 193-nm high-NA with phase-shift masks
Author(s): Gregory McIntyre; Andrew Neureuther; Steve Slonaker; Venu Vellanki; Patrick Reynolds
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Polarization aberration analysis in optical lithography systems
Author(s): Jongwook Kye; Gregory McIntyre; Yamamoto Norihiro; Harry J. Levinson
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High NA polarized light lithography for 0.29-k1 process
Author(s): Chanha Park; Jeonkyu Lee; Kiho Yang; Shih-en Tseng; Young-Hong Min; Alek C. Chen; Hyunjo Yang; Donggyu Yim; Jinwoong Kim
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Validity of the Hopkins approximation in simulations of hyper-NA (NA>1) line-space structures for an attenuated PSM mask
Author(s): Andreas Erdmann; Giuseppe Citarella; Peter Evanschitzky; Hans Schermer; Vicky Philipsen; Peter De Bisschop
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Global optimization of the illumination distribution to maximize integrated process window
Author(s): Alan E. Rosenbluth; Nakgeuon Seong
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Dense OPC and verification for 45nm
Author(s): Nicolas Cobb; Dragos Dudau
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OPC and verification accuracy enhancement using the 2D wafer image for the low-k1 memory devices
Author(s): Yong-Chan Ban; Dong-Yoon Lee; Ji-Suk Hong; Moon-Hyun Yoo; Jeong-Taek Kong
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(Lens) design for (chip) manufacture: lens tolerancing based on linewidth calculations in hyper-NA, immersion lithography systems
Author(s): R. L. Gordon; M. P. Rimmer
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An integrated lithography concept with application on 45-nm ½ pitch flash memory devices
Author(s): Mircea Dusa; Andre Engelen; Jo Finders
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Alt- phase-shift mask technology for 65nm logic applications
Author(s): Kishore K. Chakravorty; Sven Henrichs; Wei Qiu; Joas L. Chavez; Yi-Ping Liu; Firoz Ghadiali; Karmen Yung; Nathan Wilcox; Mary Silva; Jian Ma; Ping Qu; Brian Irvine; Henry Yun; Wen-Hao Cheng; Jeff Farnsworth
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Across wafer focus mapping and its applications in advanced technology nodes
Author(s): Gary Zhang; Stephen DeMoor; Scott Jessen; Qizhi He; Winston Yan; Sopa Chevacharoenkul; Venugopal Vellanki; Patrick Reynolds; Joe Ganeshan; Jan Hauschild; Marco Pieters
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Characterizing a scanner illuminator for prediction of OPE effects
Author(s): Stephen P. Renwick; Hisashi Nishinaga; Naonori Kita
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MEEF-based correction to achieve OPC convergence of low-k1 lithography with strong OAI
Author(s): Soo-Han Choi; A-Young Je; Ji-Suk Hong; Moon-Hyun Yoo; Jeong-Taek Kong
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Basic studies of overlay performance on immersion lithography tool
Author(s): Ken-ichi Shiraishi; Tomoharu Fujiwara; Hirokazu Tanizaki; Yuuki Ishii; Takuya Kono; Shinichiro Nakagawa; Tatsuhiko Higashiki
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Experimental characterization of the receding meniscus under conditions associated with immersion lithography
Author(s): Timothy A. Shedd; Scott D. Schuetter; Gregory F. Nellis; Chris K. Van Peski
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A dive into clear water: immersion defect capabilities
Author(s): B. Streefkerk; J. Mulkens; R. Moerman; M. Stavenga; J. van der Hoeven; C. Grouwstra; R. Bruls; M. Leenders; S. Wang; Y. van Dommelen; M. Boerema; H. Jansen; K. Cummings; M. Riepen; H. Boom; M. Suddendorf; P. Huisman
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Investigation of immersion related defects using pre- and post-wet experiments
Author(s): Stefan Brandl; Robert Watso; Bill Pierson; Steve Holmes; Yayi Wei; Karen Petrillo; Kevin Cummings; Frank Goodwin
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Immersion effects on lithography system performance
Author(s): Seiji Nagahara; Ivan Pollentier; Takahiro Machida; Sean O'Brien; Eric Jacobs; Charles Schaap; Philippe Leray; Greet Storms; Kathleen Nafus; David Laidler; Shaunee Cheng
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Laser bandwidth and other sources of focus blur in lithography
Author(s): T. Brunner; D. Corliss; S. Butt; T. Wiltshire; C. P. Ausschnitt; M. Smith
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Aerial image based lens metrology for wafer steppers
Author(s): Peter Dirksen; Joseph J. M. Braat; Augustus J. E. M. Janssen; Ad Leeuwestein; Tomoyuki Matsuyama; Tomoya Noda
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Practical approach to full-field wavefront aberration measurement using phase wheel targets
Author(s): Lena V. Zavyalova; Bruce W. Smith; Anatoly Bourov; Gary Zhang; Venugopal Vellanki; Patrick Reynolds; Donis G. Flagello
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Effects of laser bandwidth on OPE in a modern lithography tool
Author(s): Kevin Huggins; Toki Tsuyoshi; Meng Ong; Robert Rafac; Christopher Treadway; Devashish Choudhary; Takehito Kudo; Shigeru Hirukawa; Stephen P. Renwick; Nigel R. Farrar
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Positive and negative tone double patterning lithography for 50-nm flash memory
Author(s): Chang-Moon Lim; Seo-Min Kim; Young-Sun Hwang; Jae-Seung Choi; Keun-Do Ban; Sung-Yoon Cho; Jin-Ki Jung; Eung-Kil Kang; Hee-Youl Lim; Hyeong-Soo Kim; Seung-Chan Moon
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High transmission mask technology for 45nm node imaging
Author(s): Will Conley; Nicoló Morgana; Bryan S. Kasprowicz; Mike Cangemi; Matt Lassiter; Lloyd C. Litt; Marc Cangemi; Rand Cottle; Wei Wu; Jonathan Cobb; Young-Mog Ham; Kevin Lucas; Bernie Roman; Chris Progler
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Experimental evaluation of Bulls-Eye illumination for assist-free random contact printing at sub-65nm node
Author(s): Jo Finders; Andre Engelen; Geert Vandenberghe; Joost Bekaert; Tim Chen
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Optical properties and process impacts of high transmission EAPSM
Author(s): Young Mog Ham; Nicolo Morgana; Pierre Sixt; Mike Cangemi; Bryan Kasprowicz; Chris Progler; Pat Martin
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Inverse lithography technology at chip scale
Author(s): Benjamin Lin; Ming Feng Shieh; Jie-wei Sun; Jonathan Ho; Yan Wang; Xin Wu; Wolfgang Leitermann; Orson Lin; Jason Lin; Yong Liu; Linyong Pang
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Second generation fluids for 193nm immersion lithography
Author(s): Roger H. French; Weiming Qiu; Min K. Yang; Robert C. Wheland; Michael F. Lemon; Aaron L. Shoe; Doug J. Adelman; Michael K. Crawford; Hoang V. Tran; Jerald Feldman; Steve J. McLain; Sheng Peng
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Studies of consequences of photo-acid generator leaching in 193nm immersion lithography
Author(s): V. Liberman; M. Switkes; M. Rothschild; S. T. Palmacci; A. Grenville
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Watermark defect formation and removal for immersion lithography
Author(s): Ching-Yu Chang; Da-Ching Yu; John C. H. Lin; Burn J. Lin
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High-index optical materials for 193nm immersion lithography
Author(s): John H. Burnett; Simon G. Kaplan; Eric L. Shirley; Deane Horowitz; Wilfried Clauss; Andrew Grenville; Chris Van Peski
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High index fluoride materials for 193 nm immersion lithography
Author(s): T. Nawata; Y. Inui; I. Masada; E. Nishijima; H. Satoh; T. Fukuda
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Mask defect printing mechanisms for future lithography generations
Author(s): Andreas Erdmann; Thomas Graf; Karsten Bubke; Ingo Höllein; Silvio Teuber
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High transmission mask technology for 45nm node imaging
Author(s): Will Conley; Nicoló Morgana; Bryan S. Kasprowicz; Mike Cangemi; Matt Lassiter; Lloyd C. Litt; Marc Cangemi; Rand Cottle; Wei Wu; Jonathan Cobb; Young-Mog Ham; Kevin Lucas; Bernie Roman; Chris Progler
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Optimizing absorber thickness of attenuating phase-shifting masks for hyper-NA lithography
Author(s): Masaki Yoshizawa; Vicky Philipsen; Leonardus H. A. Leunissen
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193-nm immersion photomask image placement in exposure tools
Author(s): Eric Cotte; Benjamin Alles; Timo Wandel; Gunter Antesberger; Silvio Teuber; Manuel Vorwerk; Andreas Frangen; Frank Katzwinkel
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EMF simulation with DDM to enable EAPSM masks in 45-nm manufacturing
Author(s): Patrick M. Martin; C. J. Progler; Michael Cangemi; Kostas Adam; George Bailey; Pat LaCour
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Compensation of high-NA mask topography effects by using object modified Kirchhoff model for 65 and 45nm nodes
Author(s): Yuri Aksenov; Peter Zandbergen; Masaki Yoshizawa
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Fast inverse lithography technology
Author(s): Daniel S. Abrams; Linyong Pang
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The improvement of DOF for sub-100nm process by focus scan
Author(s): Jung-Chan Kim; Hyun-Jo Yang; Jin-Hyuck Jeon; Chan-Ha Park; James Moon; Dong-gyu Yim; Jin-Woong Kim; Shih-en Tseng; Kyu-Kab Rhe; Young-Hong Min; Alek C. Chen
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Finding the right way: DFM versus area efficiency for 65nm gate layer lithography
Author(s): Chandra S. Sarma; Steven Scheer; Klaus Herold; Carlos Fonseca; Alan Thomas; Uwe Paul Schroeder
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Pushing the lithography limit: applying inverse lithography technology (ILT) at the 65nm generation
Author(s): Chi-Yuan Hung; Bin Zhang; Eric Guo; Linyong Pang; Yong Liu; Kechang Wang; Grace Dai
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Patterning 45nm flash/DRAM contact hole mask with hyper-NA immersion lithography and optimized illumination
Author(s): Ting Chen; Doug Van Den Broeke; Stephen Hsu; Sangbong Park; Gabriel Berger; Tamer Coskun; Joep de Vocht; Noel Corcoran; Fung Chen; Eddy van der Heijden; Jo Finders; Andre Engelen; Robert Socha
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Calibrating OPC models using asymmetric structures
Author(s): Laurent Depre; Christopher Cork; Qiliang Yan
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Lithography process optimization using linear superposition of commonly available illumination modes
Author(s): Michael M. Crouse; Yasri Yudhistira; Min Ho Lee; Hope Matis
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Mask topography effect on OPC at hyper-NA lithography
Author(s): Sook Lee; In-Sung Kim; Yong-Jin Chun; Sang-Wook Kim; Suk-Joo Lee; Sang-Gyun Woo; Han-Ku Cho; Joo-Tae Moon
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In quest of predictive lithography simulation
Author(s): Christian K. Kalus; Hinderk M. Buß; Peter D. Brooker
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Predictive focus exposure modeling (FEM) for full-chip lithography
Author(s): Luoqi Chen; Yu Cao; Hua-yu Liu; Wenjin Shao; Mu Feng; Jun Ye
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Mass production level ArF immersion exposure tool
Author(s): Masahiko Okumura; Jun Ishikawa; Masato Hamatani; Masahiro Nei
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Development status of a 193-nm immersion exposure tool
Author(s): Takahito Chibana; Hitoshi Nakano; Hideo Hata; Nobuhiro Kodachi; Naoto Sano; Mikio Arakawa; Yoichi Matsuoka; Youji Kawasaki; Sunao Mori; Keiko Chiba
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Immersion lithography with an ultrahigh-NA in-line catadioptric lens and a high-transmission flexible polarization illumination system
Author(s): Hans Jasper; Theo Modderman; Mark van de Kerkhof; Christian Wagner; Jan Mulkens; Wim de Boeij; Eelco van Setten; Bernhard Kneer
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Early learning on hyper-NA lithography using two-beam immersion interference
Author(s): Eric Hendrickx; Maaike Op de Beeck; Roel Gronheid; Janko Versluijs; Lieve Van Look; Monique Ercken; Geert Vandenberghe
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SLM lithography: printing down to k<sub>1</sub>=0.30 without previous OPC processing
Author(s): Tor Sandstrom; Igor Ivonin
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Liquid immersion lithography at 193 nm using a high-NA achromatic interferometer
Author(s): Anne-Laure Charley; Alexandre Lagrange; Olivier Lartigue; Philippe Bandelier; Marianne Derouard; Patrick Schiavone
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A hyper-NA projection lens for ArF immersion exposure tool
Author(s): Hironori Ikezawa; Yasuhiro Ohmura; Tomoyuki Matsuyama; Yusaku Uehara; Toshiro Ishiyama
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What determines the ultimate resolution? The critical relationship between exposure tools and photoresists
Author(s): Tokuyuki Honda; Yasuhiro Kishikawa; Yuichi Iwasaki; Akinori Ohkubo; Miyoko Kawashima; Minoru Yoshii
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Catadioptric lens design: the breakthrough to hyper-NA optics
Author(s): Bernhard Kneer; Paul Gräupner; Reiner Garreis; Ralph Kläsges; Heiko Feldmann
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XLA-300: the fourth-generation ArF MOPA light source for immersion lithography
Author(s): Fedor Trintchouk; Toshihiko Ishihara; Walter Gillespie; Richard Ness; Robert Bergstedt; Christian Wittak; Richard Perkins
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A new on-machine measurement system to measure wavefront aberrations of projection optics with hyper-NA
Author(s): Y. Ohsaki; T. Mori; S. Koga; M. Ando; K. Yamamoto; T. Tezuka; Y. Shiode
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High power injection lock 6kHz 60W laser for ArF dry/wet lithography
Author(s): Hakaru Mizoguchi; T. Inoue; J. Fujimoto; T. Suzuki; T. Matsunaga; S. Sakanishi; M. Kaminishi; Y. Watanabe; T. Nakaike; M. Shinbori; M. Yoshino; T. Kawasuji; H. Nogawa; H. Umeda; H. Taniguchi; Y. Sasaki; J. Kinoshita; T. Abe; H. Tanaka; H. Hayashi; K. Miyao; M. Niwano; A. Kurosu; M. Yashiro; H. Nagano; T. Igarashi; T. Mimura; K. Kakizaki
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Performance study of chromeless phase lithography mask for the 65nm node and beyond
Author(s): Yosuke Kojima; Takashi Ohshima; Kazuaki Chiba; Toshio Konishi
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Optimization of chromeless phase mask by comparing scattering bars with zebra patterns
Author(s): Hye-Young Kang; Ji-Eun Lee; Eun-A Kwak; Eun-Jin Kim; Seung-Wook Park; Sung-Hyuck Kim; Dong-Soo Shin; HeeJun Jeong; Hye-Keun Oh
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Application of super-diffraction lithography (SDL) for an actual device fabrication
Author(s): Shuji Nakao; Shinroku Maejima; Itaru Kanai; Akihiro Nakae; Junjiro Sakai; Koichiro Narimatsu; Kazuyuki Suko
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DOF enhancement for contact holes by using Nikon's CDP option and its introduction into production
Author(s): Louis-Pierre Armellin; Virginie Dureuil; Laurent Nuel; Vincent Salvetat; Winfried Meier; Andreas Kraft
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Model-based placement and optimization of subresolution assist features
Author(s): Levi D. Barnes; Benjamin D. Painter; Lawrence S. Melvin
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The investigation of 193nm CPL 3D topology mask effect on wafer process performance
Author(s): Yung Feng Cheng; Yueh Lin Chou; Chuen Huei Yang
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Robust double exposure flow for memory
Author(s): J. W. Park; Sungsoo Shu; Insung Kim; Youngsuk Kang
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Multiple focal plane exposure in 248nm lithography to improve the process latitude of 110nm contact
Author(s): Sunwook Jung; Elvis Yang; T. H. Yang; K. C. Chen; Joseph Ku; Chih-Yuan Lu
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Contact-hole process window improved by assistant features with FLEX function on KrF
Author(s): Cheng Ku Chiang; L. S. Yeh; Wen Bin Wu; Chiang Lin Shih; Jeng Ping Lin
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One method to monitor the PPD function of Nikon scanners and some reticle surface particle detection machines
Author(s): Wei-Han Yang; Ying-Ku Lin; C. C. Huang
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LIS design for optimum efficiency
Author(s): Lev Ryzhikov; Yuli Vladimirsky
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Active spectral control of DUV light sources for OPE minimization
Author(s): Wayne J. Dunstan; Robert Jacques; Robert J. Rafac; Rajasekhar Rao; Fedor Trintchouk
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244-nm imaging interferometric lithography test bed
Author(s): Svjatoslav Smolev; A. Biswas; A. Frauenglass; Steven R. J. Brueck
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Effects of beam pointing instability on two-beam interferometric lithography
Author(s): Yongfa Fan; Anatoly Bourov; Michael Slocum; Bruce W. Smith
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High-throughput homogenizers for hyper-NA illumination systems
Author(s): H. Ganser; M. Darscht; Y. Miklyaev; D. Hauschild; L. Aschke
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GT40A: durable 45-W ArF injection-lock laser light source for dry/immersion lithography
Author(s): Satoshi Tanaka; Hiroaki Tsushima; Takanori Nakaike; Taku Yamazaki; Takashi Saito; Hitoshi Tomaru; Koji Kakizaki; Takashi Matsunaga; Toru Suzuki; Osamu Wakabayashi; Shinji Nagai; Junichi Fujimoto; Toyoharu Inoue; Hakaru Mizoguchi
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Structure and optical property of large-size CaF<sub>2</sub> single crystals grown by the CZ method
Author(s): I. Masada; T. Nawata; Y. Inui; T. Date; T. Mabuchi; E. Nishijima; T. Fukuda
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Benchmark of numerical versus analytical proximity curve calculations
Author(s): Roderick Köhle; Christof Bodendorf; Wolfgang Hoppe
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Evaluation of partial coherent imaging using the transfer function in immersion lithography
Author(s): Mi-Rim Jung; Eun-A Kwak; Hye-Keun Oh; Seong-Bo Shim; Na-Rak Choi; Jai-Soon Kim
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Heterogeneous diffusion model for simulation of resist process
Author(s): Chang Moon Lim; Jun Taek Park; Seo Min Kim; Hyeong Soo Kim; Seung Chan Moon
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Simulation of mask induced polarization effect on imaging in immersion lithography
Author(s): Eun-A Kwak; Mi-Rim Jung; Dai-Gyoung Kim; Ji-Eun Lee; Hye-Keun Oh; Sook Lee
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Simulation of dense contact hole (&#954;<sub>1</sub>=0.35) arrays with 193 nm immersion lithography
Author(s): Alex K. Raub; Abani M. Biswas; Y. Borodovsky; G. Allen; S. R. J. Brueck
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How to obtain accurate resist simulations in very low-k1 era
Author(s): Tsann-Bim Chiou; Chan-Ha Park; Jae-Seung Choi; Young-Hong Min; Steve Hansen; Shih-En Tseng; Alek C. Chen; Donggyu Yim
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Intensive 2D SEM model calibration for 45nm and beyond
Author(s): George E. Bailey; Thuy Do; Yuri Granik; Ir Kusnadi; Andrew Estroff
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Methods for benchmarking photolithography simulators: part IV
Author(s): Trey Graves; Mark D. Smith; Chris A. Mack
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The capability of a 1.3-NA &#956;stepper using 3D EMF mask simulations
Author(s): Will Conley; Jeff Meute; James Webb; Douglas Goodman; Robert Maier
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Experimental measurement of photoresist modulation curves
Author(s): Anatoly Bourov; Stewart A. Robertson; Bruce W. Smith; Michael Slocum; Emil C. Piscani
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Phase-shift focus monitoring techniques
Author(s): Matthew McQuillan; Bill Roberts
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Study of polarization aberration measurement using SPIN method
Author(s): Yoshihiro Shiode; Takeaki Ebiahara
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Effect of lens aberrations on OPC model accuracy for low k1 lithography process
Author(s): Jun-Kyu Ahn; Chang-Young Jeong; Jeong-Lyeol Park; Jae-Sung Choi; Jeong-Gun Lee
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Fractal model applied wavefront aberration for the expression of local flare
Author(s): Toshiharu Nakashima; Taro Ogata
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Analysis of the combined impact of the laser spectrum, illuminator miscalibrations, and lens aberrations on the 90nm technology node imaging with off-axis illuminations
Author(s): Sara Loi; Umberto Iessi; Robert Chung
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Flare effect of different shape of illumination apertures in 193-nm optical lithography system
Author(s): Young-Je Yun; Ju-Hyung Moon; Haeng-Leem Jeon; Jea-Hee Kim; Keeho Kim
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Intelligent model-based OPC
Author(s): W.C. Huang; C.M. Lai; B. Luo; C.K. Tsai; M.H. Chih; C.W. Lai; C.C. Kuo; R.G. Liu; H.T. Lin
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Maximizing test pattern coverage for OPC model build
Author(s): Andrew Khoh; Shyue-Fong Quek; Yee-Mei Foong; Jacky Cheng; Byoung-Il Choi
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A novel approach for full-chip SRAF printability check
Author(s): Chi-Yuan Hung; Liguo Zhang; Qingwei Liu
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A methodology to take LER effect into OPC modeling algorithm
Author(s): Chi-Yuan Hung; Qingwei Liu; Zexi Deng; Liguo Zhang
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Line end optimization through optical proximity correction (OPC): a case study
Author(s): Dyiann Chou; Ken McAllister
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Efficient OPC model generation and verification for focus variation
Author(s): Yong-Hee Park; Yong-Chan Ban; Duck-Hyung Hur; Dong-Hyun Kim; Ji-Suk Hong; Moon-Hyun Yoo; Jeong-Taek Kong
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Model-based OPC for node random size contact hole with SRAF
Author(s): C. W. Huang; Y. Y. Chang; L. S. Yeh; H. Y. Liao; C. L. Shih; J. P. Lin
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Using reconfigurable OPC to improve quality and throughput of sub-100nm IC manufacturing
Author(s): Richard D. Morse; Pat LoPresti; Kevin Corbett
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Application of CM0 resist model to OPC and verification
Author(s): Yuri Granik; Nick Cobb; Dmitry Medvedev
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Verifying high NA polarization OPC treatment on wafer
Author(s): Ralph E. Schlief; Mario Hennig; Rainer Pforr; Jörg Thiele; Max Hoepfl
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Improvements in post-OPC data constraints for enhanced process corrections
Author(s): Ryan L. Burns; Yuping Cui; Zengqin Zhao; Ian Stobert; Pat LaCour; Ayman Yehia; Kareem Madkour; Mohamed Gheith; Ahmed Seoud
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OPC and PSM design using inverse lithography: a nonlinear optimization approach
Author(s): Amyn Poonawala; Peyman Milanfar
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Integration of the retical systematic CD errors into an OPC modeling and correction
Author(s): Geng Han; Scott Mansfield; Azalia Krasnoperova
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Simulation based post OPC verification to enhance process window, critical failure analysis, and yield
Author(s): Jae-Hyun Kang; Jae-Young Choi; Kyung-Hee Yun; Munho Do; Yong-Suk Lee; Keeho Kim
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Mask process variation induced OPC accuracy in sub-90nm technology node
Author(s): Se-Jin Park; Yeon-Ah Shim; Jae-Hyun Kang; Jae-Young Choi; Kyung-Hee Yoon; Yong-Suk Lee; Keeho Kim
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Process window OPC for reduced process variability and enhanced yield
Author(s): Azalia Krasnoperova; James A. Culp; Ioana Graur; Scott Mansfield; Mohamed Al-Imam; Hesham Maaty
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Layout 'hot spots' for advancing optical technologies
Author(s): Juliet Holwill; Gregory McIntyre; Wojtek Poppe; Andrew R. Neureuther
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Building a computational model for process and proximity compensation
Author(s): Gökhan Perçin; Hsu-Ting Huang; Franz X. Zach; Apo Sezginer; Ali Mokhberi
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Enhancing DRAM printing process window by using inverse lithography technology (ILT)
Author(s): Chih-Wei Chu; Becky Tsao; Karl Chiou; Snow Lee; Jerry Huang; Yong Liu; Timothy Lin; Andrew Moore; Linyong Pang
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A systematic study of the dip in the CD through-pitch curve for low-k1 processes
Author(s): Jun Zhu; Peng Wu; Yuntao Jiang; Qiang Wu
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Dual antireflection layers for ARC/hard-mask applications
Author(s): Victor Huang; T.S. Wu; Mars Yang; Francis Lin; Elvis Yang; T.H. Yang; K.C. Chen; Joseph Ku; C.Y. Lu
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Application of aberration optimization for specific pattern using Nikon's TAO method
Author(s): Winfried Meier; Gabriele Weirauch; Max Hoepfl; Andreas Jahnke
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Efficient optimization of lithographic process conditions using a distributed, combined global/local search approach
Author(s): Tim Fühner; Stephan Popp; Christoph Dürr; Andreas Erdmann
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Optimization of contact hole lithography for 65-nm node logic LSI
Author(s): Yuji Setta; Hiroki Futatsuya; Atsushi Sagisaka; Tatsuo Chijimatsu; Takayoshi Minami; Fumitoshi Sugimoto; Seiichi Ishikawa; Satoru Asai
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Pupil and illuminator optimization in partially coherent imaging systems
Author(s): Igor Ivonin; Tor Sandstrom
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Illumination conditions matching for critical layers manufacturing in a production context
Author(s): Louis-Pierre Armellin; Andreas Torsy; Ken Hernan; Gurwan Kerrien; Johanna Guidet; Yan Riopel; Vincent Salvetat
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Inverting pupil illumination from resist-based measurements
Author(s): Gokhan Perçin; Apo Sezginer; Franz X. Zach
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A systematic study of process windows and MEF for line end shortening under various photo conditions for more effective and robust OPC correction
Author(s): Qiang Wu; Jun Zhu; Peng Wu; Yuntao Jiang
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Lithography budget analysis at the process module level
Author(s): Colin J. Brodsky; William Chu
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Minimization of sidelobes in rectangular contact/via hole structures
Author(s): Mary Coles; Mark Somervell
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Systematic optimization of the thin-film stack by minimizing CD sensitivity
Author(s): Shinn-Sheng Yu; Burn J. Lin; Anthony Yen; Chih-Ming Ke
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Implementation of contact hole patterning performance with KrF resist flow process for 60nm node DRAM application
Author(s): Hyoung-ryeun Kim; Yeong-Bae Ahn; JongKuk Kim; SeokKyun Kim; DongHeok Park; Young-Sik Kim
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Advances in imaging tool adjustment optimization methodologies and capabilities, including impact upon imaging performance budget components
Author(s): Steve D. Slonaker; Mark C. Phillips; Chris Treadway; Greg Darby; Kurt Johnson; Bob Moore
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Mask substrate birefringence requirements for hyper-NA lithography
Author(s): Mark van de Kerkhof; Wim de Boeij; Marcel Demarteau; Bernd Geh; Leonardus H. A. Leunissen; Patrick Martin; Mike Cangemi
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Printability of quartz defects in a production Cr-less mask process
Author(s): Gregory Hughes; Susan MacDonald; John Riddick; Anthony Nhiev; Jason Hickethier
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Alternated phase-shift mask for 45nm node contact hole patterning
Author(s): Pietro Cantu; Gianfranco Capetti; Chiara Catarisano; Fabrizio D'Angelo; Alessandro Vaccaro
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Alternating PSM balancing characterization: a comparative study using AIMS and wafer print data
Author(s): Martin Sczyrba; Roderick Köhle; Karsten Bubke; Mario Hennig; Rainer Pforr; Ralf Neubauer
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Applicability of alternating phase shifting masks using polarized light
Author(s): Karsten Bubke; Martin Sczyrba; Christophe Pierrat
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The feasibility study of KrF HT-PSM in ArF lithography process
Author(s): Yeon Hwa Lim; Hong Ik Kim; Jae Sung Choi; Jeong Gun Lee
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Methodology to set up mask CD specification including MEEF and process sensitivity of mask CD error
Author(s): Yeon-Ah Shim; Se-Jin Park; Ju-Hyun Kim; Jea-Hee Kim; Kee-Ho Kim
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Influence of mask manufacturing process on printing behavior of angled line structures
Author(s): Silvio Teuber; Arndt C. Dürr; Holger Herguth; Gerhard Kunkel; Timo Wandel; Thomas Zell
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Process window OPC verification: dry versus immersion lithography for the 65nm node
Author(s): Amandine Borjon; Jerome Belledent; Yorick Trouiller; Kevin Lucas; Christophe Couderc; Frank Sundermann; Jean-Christophe Urbani; Yves Rody; Christian Gardin; Frank Foussadier; Patrick Schiavone
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CFD analysis of the receding meniscus in immersion lithography
Author(s): Mohamed S. El-Morsi; Scott D. Schuetter; Gregory F. Nellis; Chris K. Van Peski
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Mask topography effect with polarization at hyper NA
Author(s): Norihiro Yamamoto; Jongwook Kye; Harry J. Levinson
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Determination of complex index of immersion liquids at 193 nm
Author(s): Jean-Louis Stehle; Jean-Philippe Piel; Jose Campillo-Carreto
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Sub-40nm pattern fabrication in 157nm interferometric immersion lithography
Author(s): Takuya Hagiwara; Shou Tsuji; Kiyoshi Fujii; Masato Moriya; Osamu Wakabayashi; Akira Sumitani; Yusuke Saito; Kazuhiko Maeda
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Full-field exposure tools for ArF immersion lithography
Author(s): Jeung-woo Lee; Akihiko Otoguro; Toshiro Itani; Kiyoshi Fujii; Ken-ichi Shiraishi; Tomoharu Fujiwara; Yuki Ishii
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Analysis and improvement of defectivity in immersion lithography
Author(s): Katsushi Nakano; Soichi Owa; Irfan Malik; Tetsuya Yamamoto; Somnath Nag
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Verification of optical proximity effect in immersion lithography
Author(s): Toshifumi Suganaga; Shinroku Maejima; Tetsuro Hanawa; Takeo Ishibashi; Shuji Nakao; Seiichiro Shirai; Koichiro Narimatsu; Kazuyuki Suko; Kenichi Shiraishi; Yuki Ishii; Tomoyuki Ando; Katsumi Ohmori
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Wafer management between coat/developer track and immersion lithography tool
Author(s): Tomoharu Fujiwara; Kenichi Shiraishi; Hirokazu Tanizaki; Yuuki Ishii; Hideharu Kyoda; Taro Yamamoto; Seiki Ishida
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Three-dimensional imaging of 30-nm nanospheres using immersion interferometric lithography
Author(s): Jianming Zhou; Yongfa Fan; Bruce W. Smith
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Comparison of immersion lithography from projection and interferometric exposure tools
Author(s): Stewart A. Robertson; Joanne M. Leonard; Bruce W. Smith; Anatoly Bourov
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Immersion specific defect mechanisms: findings and recommendations for their control
Author(s): Michael Kocsis; Dieter Van Den Heuvel; Roel Gronheid; Mireille Maenhoudt; Dizana Vangoidsenhoven; Greg Wells; Nickolay Stepanenko; Michael Benndorf; Hyun Woo Kim; Shinji Kishimura; Monique Ercken; Frieda Van Roey; S. O'Brien; Wim Fyen; Philippe Foubert; Richard Moerman; Bob Streefkerk
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Assembly of a 193-nm interferometer for immersion lithography: vibration effects on image contrast
Author(s): Alex Lagrange; Anne Laure Charley; Olivier Lartigue; Marianne Derouard
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Drag-a-drop: a characterization tool for immersion lithography
Author(s): Derek W. Bassett; J. Chris Taylor; Will Conley; C. Grant Willson; Roger T. Bonnecaze
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Novel high refractive index fluids for 193nm immersion lithography
Author(s): Julius Santillan; Akihiko Otoguro; Toshiro Itani; Kiyoshi Fujii; Akifumi Kagayama; Takashi Nakano; Norio Nakayama; Hiroaki Tamatani; Shin Fukuda
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Development of cleaning process for immersion lithography
Author(s): Ching Yu Chang; D.C. Yu; John C.H. Lin; Burn J. Lin
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Measurement, separation, and amelioration of transverse scanning synchronization error
Author(s): Yuji Yamaguchi; Ranjan Khurana; Adlai H. Smith; Venky Subramony; Calvin Chen Chii Wean; Joseph J. Bendik
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Dynamic leaching procedure on an immersion interference printer
Author(s): Roel Gronheid; Enrico Tenaglia; Monique Ercken
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