Share Email Print
cover

Proceedings of SPIE Volume 5992

25th Annual BACUS Symposium on Photomask Technology
Format Member Price Non-Member Price
Softcover $105.00 * $105.00 *

*Available as a photocopy reprint only. Allow two weeks reprinting time plus standard delivery time. No discounts or returns apply.


Volume Details

Volume Number: 5992
Date Published: 4 November 2005
Softcover: 169 papers (1694) pages
ISBN: 9780819460141

Table of Contents
show all abstracts | hide all abstracts
Mask industry assessment: 2005
Author(s): Gilbert Shelden; Scott Hector
Show Abstract
The detectability of Qz phase defects and its application for 65nm node CPL mask manufacturing
Author(s): Won Il Cho; Jin Hyung Park; Dong Hoon Chung; Sung Woon Choi; Woo Sung Han
Show Abstract
Process window impact of progressive mask defects: its inspection and disposition techniques (go/no-go criteria) via a lithographic detector
Author(s): Jerry Huang; Lan-Hsin Peng; Chih-Wei Chu; Kaustuve Bhattacharyya; Ben Eynon; Farzin Mirzaagha; Tony Dibiase; Kong Son; Jackie Cheng; Ellison Chen; Den Wang
Show Abstract
Evaluation and implementation of TeraScan reflected light die-to-database inspection mode for 65nm design node process
Author(s): Luke T. H. Hsu; C.H. Ho; C. C. Lin; Vincent Hsu; Ellison Chen; Paul Yu; Kong Son
Show Abstract
Generating mask inspection rules for advanced lithography
Author(s): Karen Badger; Bill Broadbent; Aditya Dayal; Emily Gallagher; ChingYun Hsiang; Vincent Redding
Show Abstract
Implementation of reflected light die-to-die inspection and ReviewSmart to improve 65nm DRAM mask fabrication
Author(s): Do Young Kim; Won Il Cho; Jin Hyung Park; Dong Hoon Chung; Byung Chul Cha; Seong Woon Choi; Woo Sung Han; Ki Hun Park; Nam Wook Kim; Carl Hess; Weimin Ma; David Kim
Show Abstract
Advanced manufacturing rules check (MRC) for fully-automated assessment of complex reticle designs
Author(s): R. Gladhill; D. Aguilar; P. D. Buck; D. Dawkins; S. Nolke; J. Riddick; J. A. Straub
Show Abstract
Improvement in defect classification efficiency by grouping disposition for reticle inspection
Author(s): Rick Lai; Luke T. H. Hsu; Peter Chang; C.H. Ho; Frankie Tsai; Garrett Long; Paul Yu; John Miller; Vincent Hsu; Ellison Chen
Show Abstract
Advanced reticle inspection challenges and solutions for 65nm node
Author(s): Won D. Kim; Mark D. Eickhoff; David Kim; Sandy McCurley
Show Abstract
Mask design rules (45 nm): time for standardization
Author(s): Mark Mason; Christopher J. Progler; Patrick Martin; Young-Mog Ham; Brian Dillon; Robert Pack; Mitch Heins; John Gookassian; John Garcia; Victor Boksha
Show Abstract
Impact of photolithography and mask variability on interconnect parasitics
Author(s): Yuxin Tian; Weiping Shi; M. Ray Mercer
Show Abstract
DfM requirements and ROI analysis for system-on-chip
Author(s): Artur Balasinski
Show Abstract
DFM for manufacturers and designers
Author(s): Philippe Hurat; Michel Cote
Show Abstract
Tolerable CD variation analyzer using perturbed nominal models demonstrated on altPSM
Author(s): Ioana Graur; James A. Culp; James Bruce; Mohamed Al-Imam; Mohamed Bahnas
Show Abstract
Antireflection solutions for next generation 193-nm binary and phase-shifting masks
Author(s): Hans Becker; Markus Renno; Ulrich Hermanns; Holger Seitz; Ute Buttgereit; Konrad Knapp; Günter Hess
Show Abstract
A films based approach to intensity imbalance correction for 65nm node c:PSM
Author(s): Rand Cottle; Pierre Sixt; Matt Lassiter; Marc Cangemi; Patrick Martin; Chris Progler
Show Abstract
Expanding grayscale capability of direct-write grayscale photomask by using modified Bi/In compositions
Author(s): David K. Poon; Glenn H. Chapman; Chinheng Choo; Jun Wang; Yuqiang Tu; Michelle L. La Haye
Show Abstract
Post coat delay effects on chemically amplified resists and storage condition impacts
Author(s): Daniel B. Sullivan; Kenneth C. Racette; Monica J. Barrett; R. Brian Couture
Show Abstract
Noble development system to achieve defect-free process for 65nm node photomasks
Author(s): Hironori Sasaki; Shuichi Sanki; Ryugo Hikichi; Kiyoshi Ogawa; Akihiko Naito; Yukihiro Sato; Yasuyuki Kushida; Naoyuki Ishiwata; Hiroshi Maruyama
Show Abstract
Approaching zero etch bias at Cr etch process
Author(s): Pavel Nesladek; Norbert Falk; Andreas Wiswesser; Renee Koch; Björn Sass
Show Abstract
A study of Cr to Mosi in situ dry etching process to reduce plasma induced defect
Author(s): Il-Yong Jang; Young-Ju Park; Hyuk-Joo Kwon; Seong-Yong Moon; Seong-Woon Choi; Woo-Sung Han
Show Abstract
65 nm node photomask etching with zero CD process bias
Author(s): Banqiu Wu; Jeff Chen; Ed Markovitz; Guangming Xiao; Simon Tam; Ajay Kumar; Ibrahim Ibrahim; Wai-Fan Yau
Show Abstract
Evaluation of quartz dry etching performance for next generation phase-shift mask applications
Author(s): S. A. Anderson; T. Konishi; R. Koch; S. Yokoi; A. Kumar; I. Ibrahim
Show Abstract
Evaluation of transparent etch stop layer phase shift mask patterning and comparison with the single trench undercut approach
Author(s): Y. Rody; P. Martin; C. Couderc; P. Sixt; C. Gardin; K. Lucas; K. Patterson; C. Miramond-Collet; J. Belledent; R. Boone; A. Borjon; Y. Trouiller
Show Abstract
Mask lithography assessment for 45 nm node technology
Author(s): R. Scott Mackay; Henry Kamberian; Barry Rockwell
Show Abstract
Gray scaling in high performance optical pattern generators
Author(s): Hans Martinsson; Tor Sandstrom
Show Abstract
Pattern fidelity performance from next-generation DUV laser lithography on 65nm masks and wafers
Author(s): Robert Kiefer; Peter Buck; Vishal Garg; Jason Hickethier; Curt Jackson; John Manfredo; Cris Morgante; Paul Allen; Michael White
Show Abstract
Production performance of a Sigma7300 DUV mask writer
Author(s): Bob Olshausen; Mahesh Chandramouli; Dustin Wall; Bruce Auches; Damon Cole
Show Abstract
Performance of the ALTA 4700 with variable print strategy and optimized resist process
Author(s): Paul C. Allen; H. Christopher Hamaker; Cris Morgante; Andrew Berwick; Michael White
Show Abstract
Demonstration of a new mask structure using a bonded hard pellicle
Author(s): Philippe Thony; Béatrice Biasse; Marc Zussy; Giovanni Bianucci; Pietro Cantu'; Daniel Henry
Show Abstract
A novel strategy of lithography-error-budget optimization for the 65-nm node: mask specifications for hyper-NA imaging
Author(s): Kazuya Iwase; Kiichi Ishikawa; Koichi Takeuchi; Ken Ozawa; Fumikatsu Uesawa
Show Abstract
The impact of attenuated phase shift mask topography on hyper-NA lithography
Author(s): Chris A. Mack; Mark D. Smith; Trey Graves
Show Abstract
The impact of mask birefringence on hyper-NA (NA>1.0) polarized imaging
Author(s): Bernd Geh; Donis G. Flagello; Chris Progler; Patrick M. Martin; Leonardus H. A. Leunissen; Steve Hansen; Wim de Boeij
Show Abstract
Mask data volume: explosion or damp squib?
Author(s): Chris Spence; Scott Goad; Peter Buck; Richard Gladhill; Russell Cinque
Show Abstract
Reduction of MDP complexity through the application of OASIS based data flow
Author(s): Sung-Hoon Jang; Ji-Hyeon Choi; Ji-Soong Park; Seong-Woon Choi; Woo-Sung Han
Show Abstract
Improved file sizes and cycle times through optimization of GDSII stream
Author(s): Chin Le; David Gariepy
Show Abstract
Optimized distributed computing environment for mask data preparation
Author(s): Byoung-Sup Ahn; Ju-Mi Bang; Min-Kyu Ji; Sun Kang; Sung-Hoon Jang; Yo-Han Choi; Won-Tai Ki; Seong-Woon Choi; Woo-Sung Han
Show Abstract
The photomask technologies in hyper-NA lithography
Author(s): Hidehiro Watanabe; Hidetoshi Ohnuma
Show Abstract
Benchmark of FEM, waveguide, and FDTD algorithms for rigorous mask simulation
Author(s): Sven Burger; Roderick Köhle; Lin Zschiedrich; Weimin Gao; Frank Schmidt; Reinhard März; Christoph Nölscher
Show Abstract
Simulation-based photomask qualification using i-Virtual Stepper
Author(s): Darren Taylor; Ray Morgan; Susan Hu
Show Abstract
Vectorial effects in subwavelength mask imaging
Author(s): Wen-Hao Cheng; Jeff Farnsworth; Theodore M. Bloomstein; Andrew Grenville
Show Abstract
Through-process window resist modelling strategies for the 65 nm node
Author(s): Amandine Borjon; Jerôme Belledent; Yorick Trouiller; Kyle Patterson; Kevin Lucas; Christophe Couderc; Frank Sundermann; Jean-Christophe Urbani; Stanislas Baron; Yves Rody; Christian Gardin; Franck Foussadier; Patrick Schiavone
Show Abstract
Impact of DUV exposure on reticle repairs
Author(s): Vikram L. Tolani; Scott Chegwidden; Edgar C. Buenconsejo; Daniel Tanzil; Daniel J. Bald
Show Abstract
Image enhancement technology to get fine defect image for FIB
Author(s): Yongkyoo Choi; Heecheon Kim; Oscar Han
Show Abstract
Integration of photolithographic simulation and a mask repair system into a single concurrent work cell
Author(s): Tod Robinson; Peter Brooker; Ron Bozak; David A. Lee
Show Abstract
Haze prevention and phase/transmission preservation through cleaning process optimization
Author(s): Jennifer Qin; Yuan Zhang; Rob Delgado; Barry Rockwell; Florence Tan; Khoi Phan; Lothar Berger; Min Liu; Uwe Dietez
Show Abstract
The surface treatment for prevention of growing defect
Author(s): Jea-Young Jun; Ji-Sun Ryu; Yongk-Yoo Choi; Oscar Han
Show Abstract
Advanced mask cleaning techniques for sub-100-nm technology nodes
Author(s): James S. Papanu; Roman Gouk; Cole Franklin; Han-Wen Chen; Steven Verhaverbeke; Alexander Ko; Kent Child; Pieter Boelen; Suresh Shrauti; Elias Martinez; Brian J. Brown
Show Abstract
Characterization of photomask surface cleaning with cryogenic aerosol technique
Author(s): S. Banerjee; C.C. Lin; S. Su; C. Bowers; H.F. Chung; W. Brandt; K. Tang
Show Abstract
CD metrology of binary and phase shift masks using scatterometry
Author(s): Kyung M. Lee; Sanjay Yedur; Milad Tabet; Malahat Tavassoli
Show Abstract
Mobile metrology for advanced photomask manufacturing
Author(s): Paul MacDonald; Michael P. Goudy; Devi Koty; Henryson Omoregie; M. David Webster
Show Abstract
Photomask registration specification and its impact on FLASH memory devices
Author(s): Enio Carpi; Stuart Brown; Florence Tan; Rick Edwards
Show Abstract
Semiconductor pattern analysis with induced polarization
Author(s): Tao Chen; Tom Milster; Seung Hune Yang
Show Abstract
Mask pattern quality assurance based on lithography simulation with fine pixel SEM image
Author(s): Mitsuyo Kariya; Eiji Yamanaka; Satoshi Tanaka; Takahiro Ikeda; Shinji Yamaguchi; Kohji Hashimoto; Masamitsu Itoh; Hideaki Kobayashi; Tsukasa Kawashima; Shogo Narukawa
Show Abstract
Applying assist features to improve two dimensional feature process robustness
Author(s): Lawrence S. Melvin III; Benjamin D. Painter; Levi D. Barnes
Show Abstract
Compensating mask topography effects in CPL through-pitch solutions toward the 45nm node
Author(s): Joost Bekaert; Vicky Philipsen; Geert Vandenberghe; Doug van den Broeke; Wolfgang Degel; Axel Zibold
Show Abstract
Optical DC overlay measurement in the 2nd level process of 65 nm alternating phase shift mask
Author(s): Jian Ma; Ke Han; Kyung Lee; Yulia Korobko; Mary Silva; Joas Chavez; Brian Irvine; Sven Henrichs; Kishore Chakravorty; Robert Olshausen; Mahesh Chandramouli; Bobby Mammen; Ramaswamy Padmanaban
Show Abstract
Double exposure technique for 45nm node and beyond
Author(s): Stephen Hsu; Jungchul Park; Douglas Van Den Broeke; J. Fung Chen
Show Abstract
Image imbalance compensation in alternating phase-shift masks towards the 45nm node through-pitch imaging
Author(s): Lieve Van Look; Bryan Kasprowicz; Axel Zibold; Wolfgang Degel; Geert Vandenberghe
Show Abstract
A practical alternating PSM modeling and OPC approach to deal with 3D mask effects for the 65nm node and beyond
Author(s): Martin Drapeau; Paul J. M. van Adrichem; Lieve van Look; Bryan S. Kasprowicz
Show Abstract
First 65nm tape-out using inverse lithography technology (ILT)
Author(s): Chi-Yuan Hung; Bin Zhang; Deming Tang; Eric Guo; Linyong Pang; Yong Liu; Andrew Moore; Kechang Wang
Show Abstract
Calibration of compact OPC models using SEM contours
Author(s): Yuri Granik
Show Abstract
Modeling OPC complexity for design for manufacturability
Author(s): Puneet Gupta; Andrew B. Kahng; Swamy Muddu; Sam Nakagawa; Chul-Hong Park
Show Abstract
Applying reconfigurable RET across process window to create more robust manufacturing designs
Author(s): Mark Laurance; Abhishek Vikram; Melody Ma; William Volk; Melissa Anderson; Scott Andrews; Bo Su; Hong Du; Gaurav Verma
Show Abstract
Model-based insertion and optimization of assist features with application to contact layers
Author(s): Shumay D. Shang; Yuri Granik; Lisa Swallow; Li-guo Zhang; Travis Brist; Andres Torres; Chi-Yuan Hung; Qingwei Liu
Show Abstract
Real-world impacts of inverse lithography technology
Author(s): Jonathan Ho; Yan Wang; Xin Wu; Wolfgang Leitermann; Benjamin Lin; Ming Feng Shieh; Jie-wei Sun; Orson Lin; Jason Lin; Yong Liu; Linyong Pang
Show Abstract
Pattern type specific modeling and correction methodology at high NA and off-axis illumination
Author(s): Sungsoo Suh; Young-seog Kang; In-sung Kim; Sang-gyun Woo; Hanku Cho; Joo-tae Moon
Show Abstract
Laser and e-beam mask-to-silicon with inverse lithography technology
Author(s): Linyong Pang; Nader Shamma; Paul Rissman; Dan Abrams
Show Abstract
Fracture friendly optical proximity correction
Author(s): Frank Amoroso; Michel Cote; Tanya Do; Robert Lugg; John Nogatch
Show Abstract
OPC for edge post structures using chromeless phase shifting mask in 3-D memory
Author(s): Yung-Tin Chen; M.T. Lee
Show Abstract
OPC with customized asymmetric pupil illumination fill
Author(s): Christof T. Bodendorf; Jens Haßmann; Thomas Mülders; Karin Kurth; Jörg Thiele
Show Abstract
A mask manufacturer’s perspective on maskless lithography
Author(s): Peter Buck; Charles Biechler; Franklin Kalk
Show Abstract
Economic consequences of high throughput maskless lithography
Author(s): John G. Hartley; Lakshmi Govindaraju
Show Abstract
Implications of wafer design for manufacturing practices on photomask manufacturing
Author(s): Andrew Watts; Jed Rankin; Christopher Magg
Show Abstract
The difficult business model for mask equipment makers and mask infrastructure development support from consortia and governments
Author(s): Scott Hector
Show Abstract
Designing to win in sub-90nm mask production
Author(s): Yuan Zhang
Show Abstract
EUVL mask manufacturing: technologies and results
Author(s): Florian Letzkus; Joerg Butschke; Mathias Irmscher; Holger Sailer; Uwe Dersch; Christian Holfeld
Show Abstract
Magnetron reactive sputtering of TaN and TaON films for EUV mask applications
Author(s): Kyung M. Lee; Malahat Tavassoli; Alan Stivers; Barry Lieberman
Show Abstract
RIM-13: a high-resolution imaging tool for aerial image monitoring of EUV reticles
Author(s): M. Booth; A. Brunton; J. Cashmore; P. Elbourn; G. Elliner; M. Gower; J. Greuters; J. Hirsch; L. Kling; N. McEntee; P. Richards; V. Truffert; I. Wallhead; M. Whitfield; R. Hudyma
Show Abstract
Template manufacturing for nanoimprint lithography using existing infrastructure
Author(s): Mathias Irmscher; Joerg Butschke; Guenter Hess; Florian Letzkus; Markus Renno; Holger Sailer; Hubert Schulz; Anatol Schwersenz; Ecron Thompson; Boris Vratzov
Show Abstract
Design and fabrication of highly complex topographic nano-imprint template for dual Damascene full 3-D imprinting
Author(s): Susan MacDonald; Greg Hughes; Michael Stewart; Frank Palmieri; C. Grant Willson
Show Abstract
Impact of mask CD error on OPC performance for 65nm technology M1 level
Author(s): Oseo Park; James Oberschmidt; Wai-Kin Li
Show Abstract
Study of effects of sidewall angle on process window using 193nm CPL masks in a 300mm wafer manufacturing environment
Author(s): Yung Feng Cheng; Yueh Lin Chou; C. L. Lin; Peter Huang
Show Abstract
Enabling incremental RET to exploit hierarchical structure across multiple designs for sub-100 nm lithography
Author(s): Mark Laurance; Melissa Anderson; Mark Pilloff
Show Abstract
Hybrid ORC method for low K1 process
Author(s): Byungho Nam; Jaeseung Choi; Yeongbae Ahn; Cheolkyun Kim; Hyoungsoon Yune; James Moon; Donggyu Yim; Jinwoong Kim
Show Abstract
Full-chip level MEEF analysis using model based lithography verification
Author(s): Juhwan Kim; Lantian Wang; Daniel Zhang; Zongwu Tang
Show Abstract
Shot reduction technique for character projection lithography using combined cell stencil
Author(s): Taisuke Kazama; Makoto Ikeda; Kunihiro Asada
Show Abstract
How large MEEF is acceptable for the low-k<sub>1</sub> lithography?
Author(s): Dongseok Nam; Dong-Gun Lee; Byunggook Kim; Seong-Yong Moon; Seong-Woon Choi; Woo-Sung Han
Show Abstract
The importance of being homogeneous: on the influence of illumination inhomogeneity on AIMS images
Author(s): Arndt C. Dürr; Karsten Bubke; Martin Sczyrba; Samuel Angonin
Show Abstract
Post-OPC verification using a full-chip pattern-based simulation verification method
Author(s): Chi-Yuan Hung; Ching-Heng Wang; Cliff Ma; Gary Zhang
Show Abstract
Inverse lithography technology: verification of SRAM cell pattern
Author(s): Artur Balasinski; Andrew Moore; Nader Shamma; Timothy Lin; Hee-hong Yang
Show Abstract
Inverse lithography technology principles in practice: unintuitive patterns
Author(s): Yong Liu; Dan Abrams; Linyong Pang; Andrew Moore
Show Abstract
Source polarization and OPC effects on illumination optimization
Author(s): Travis Brist; George E. Bailey; Alexander Drozdov; Andres Torres; Andrew Estroff; Eric Hendrickx
Show Abstract
Mask error enhancement factor variation with pattern density
Author(s): Hye-Young Kang; Sung-Hyuck Kim; Chang-Ho Lee; Hye-Keun Oh
Show Abstract
Reverse engineering source polarization error
Author(s): George E. Bailey; Kostas Adam; Travis Brist; Olivier Toublan; Andrew Estroff
Show Abstract
Manufacturability study of masks created by inverse lithography technology (ILT)
Author(s): Patrick M. Martin; C. J. Progler; G. Xiao; R. Gray; L. Pang; Y. Liu
Show Abstract
Implementation of random contact hole design with CPL mask by using IML technology
Author(s): Michael Hsu; Doug Van Den Broeke; Stephen Hsu; J. Fung Chen; Xuelong Shi; Noel Corcoran; Linda Yu
Show Abstract
Optimization of Alt-PSM structure for 45nm node ArF immersion lithography
Author(s): Takashi Adachi; Kei Mesuda; Nobuhito Toyama; Yasutaka Morikawa; Hiroshi Mohri; Naoya Hayashi
Show Abstract
Patterning optimization for 55nm design rule DRAM/flash memory using production-ready customized illuminations
Author(s): Ting Chen; Doug Van Den Broeke; Stephen Hsu; Michael Hsu; Sangbong Park; Gabriel Berger; Tamer Coskun; Joep de Vocht; Fung Chen; Robert Socha; JungChul Park; Keith Gronlund
Show Abstract
Advanced e-beam CAR resist evaluation for 65nm generation
Author(s): Gordon Chan; Orson Lin; Wesen Tseng; Booky Lee; Torey Huang; Makoto Kozuma
Show Abstract
Investigation of shipping material and reticle storage environment to dark loss stability of chemically amplified resist
Author(s): Christina Deverich; Paul Rabidoux; Ken Racette
Show Abstract
A study of organic contamination control on photomask surface for 65-nm tech node
Author(s): Jong-Min Kim; Han-Byul Kang; Yong-Dae Kim; Hyun-Joon Cho; Sang-Soo Choi
Show Abstract
Investigation of sulfate-free clean processes for next generation lithography
Author(s): Christian Chovino; Stefan Helbig; Petr Haschke; Werner Saule
Show Abstract
Influence of organic contamination on photomask performance
Author(s): Christian Chovino; Stefan Helbig; Wolfgang Dieckmann; Karsten Bubke; Peter Dress
Show Abstract
Mask cleaning strategies: particle elimination with minimal surface damage
Author(s): Steve Osborne; Matthias Nanningas; Hidekazu Takahashi; Eric Woster; Carl Kanda; John Tibbe
Show Abstract
Mask cleaning strategies: haze elimination
Author(s): Steve Osborne; Matthias Nanninga; Hidekazu Takahashi; Eric Woster
Show Abstract
Haze defect control and containment in a high volume DRAM manufacturing environment
Author(s): Jerry X. Chen; Maihan Nguyen; Osamu Arasaki; Tammy Maraquin; Daniel Sawyer; Pedro Morrison
Show Abstract
Use of excimer laser test system for studying haze growth
Author(s): Joseph Gordon; Brooke Murray; Larry E. Frisa; Erik Nelson; Colleen Weins; Michael Green; Matt Lamantia
Show Abstract
Study toward model-based DRC verification
Author(s): J. Andres Torres; Nick Cobb
Show Abstract
Model-based DRC for design and process integration
Author(s): Chi-Yuan Hung; Andrew M. Jost; Qingwei Liu
Show Abstract
A novel GDSII compression technique
Author(s): Mark Pereira; Barsha Baruah
Show Abstract
Technical summary for the Foundry Data eXchange system
Author(s): Christopher P. Braun; Gerry Krupka; Frederick R. Peiffer; Thomas A. Polk; Evelyn E. Roadcap; John M. Sosik; Gregory P. Van Allen; William Wilkinson
Show Abstract
Enhanced resist and etch CD control by design perturbation
Author(s): Puneet Gupta; Andrew B. Kahng; Chul-Hong Park
Show Abstract
Characteristics of RIE lag and pattern density effect in alternating aperture phase-shift masks
Author(s): Byung-Soo Chang; Yoon-Young Chang; Hyun-Suk Bang; In-Soo Lee; Lee-Ju Kim; Chang-Nam Ahn; Hong-Suk Kim
Show Abstract
The possibility of CrOx as the top coating material on a MoSi HT
Author(s): Noriyuki Harashima; Hiroyuki Iso; Tatsuya Isozaki; Naohiro Umeo; Takaei Sasaki
Show Abstract
Electrostatic chucking and EUVL mask flatness analysis
Author(s): M. Nataraju; A. Mikkelson; J. Sohn; R. L. Engelstad; E. G. Lovell
Show Abstract
Predicting wafer-level IP error due to particle-induced EUVL reticle distortion during exposure chucking
Author(s): Vasu Ramaswamy; Andrew Mikkelson; Roxann Engelstad; Edward Lovell
Show Abstract
Determination of mask layer stress by placement metrology
Author(s): Jörg Butschke; Ute Buttgereit; Eric Cotte; Günter Hess; Mathias Irmscher; Holger Seitz
Show Abstract
Impact of slanted absorber side wall on printability in EUV lithography
Author(s): Minoru Sugawara; Iwao Nishiyama
Show Abstract
Acoustic streaming effects in megasonic cleaning of EUV photomasks: a continuum model
Author(s): Vivek Kapila; Pierre A. Deymier; Hrishikesh Shende; Viraj Pandit; Srini Raghavan; Florence Odile Eschbach
Show Abstract
Inspection and planarization of programmed pit masks for EUV lithography
Author(s): S.-C. Seo; S.-I. Han; Y. Ikuta; P. Kearney; A. Ma; D. Krick
Show Abstract
Evaluation of alternative capping layers for EUVL mask ML blank
Author(s): Pei-yang Yan; Eberhard Spiller; Eric Gullikson; Shannon Hill
Show Abstract
On the sensitivity improvement and cross-correlation methodology for confocal EUV mask blank defect inspection tool fleet
Author(s): Kuen-Yu Tsai; Eric Gullikson; Patrick Kearney; Alan Stivers
Show Abstract
Design and fabrication of nano-imprint templates using unique pattern transforms and primitives
Author(s): Susan MacDonald; David Mellenthin; Kevin Rentzsch; Kenneth Kramer; James Ellenson; Tim Hostetler; Ron Enck
Show Abstract
CW DUV light sources for inspection tools
Author(s): Jun Sakuma; Yasuyuki Okada; Tetsumi Sumiyoshi; Hitoshi Sekita; Minoru Obara
Show Abstract
Inspection of integrated circuit database through reticle and wafer simulation: the lithography process window performance monitoring
Author(s): Bo Su; Gaurav Verma; William Volk; Mohsen Ahmadian; Hong Du; Abhishek Vikram; Scott Andrews; Yung Feng Cheng; Yueh Lin Chou; Chuen Huei Yang; ChinLung Lin
Show Abstract
Optimized inspection of advanced reticles on the TeraScan reticle inspection tool
Author(s): Aditya Dayal; J.-P. Sier; Weston Sousa; Steven Labovitz
Show Abstract
Survey of SO<sub>4</sub> outgas on mask storage environment
Author(s): Jun Sik Lee; Sung Bae Jee; Sung Min Hwang; Hyun Yul Park; Oscar Han
Show Abstract
Yield-driven multi-project reticle design and wafer dicing
Author(s): Andrew B. Kahng; Ion Mandoiu; Xu Xu; Alex Zelikovsky
Show Abstract
An integrated approach to the analysis of imprint vs. optical lithography, or why this is not just a mask discussion
Author(s): John G. Maltabes; R. Scott Mackay; Rand Cottle
Show Abstract
A comprehensive reticle handling and storage approach for optimized fab yields
Author(s): Atsushi Nobe; Hideaki Kawashima; Akinori Kurikawa; Hisashi Kasahara; Fumiko Ohta; Yasushi Okubo
Show Abstract
Optimal distributed computing resources for mask synthesis and tape-out in production environment: an economic analysis
Author(s): Chris Cork; Manoj Chacko; Shimon Levi
Show Abstract
Mask rule check for inspection of leading-edge photomask
Author(s): Wakahiko Sakata; Kiyoshi Yamasaki; Shogo Narukawa; Naoya Hayashi
Show Abstract
CD measurement of points indicated in photomask writing data
Author(s): Hitomi Satoh; Masashi Ataka; Norimichi Anazawa
Show Abstract
CD measurement of angled lines on high-end masks and its calibration method
Author(s): Masashi Ataka; Yasunobu Kitayama; Katsuyuki Takahashi; Naoyuki Nakamura; Izumi Santo; Hitomi Satoh; Norimichi Anazawa
Show Abstract
Scatterometry based CD and profile metrology of MoSi/quartz structures
Author(s): Sanjay Yedur; Vi Vuong; Deepak Shivaprasad; T.P. Sarathy; Milad Tabet; Rahul Korlahalli; Jiangtao Hu
Show Abstract
Development of an actinic photomask review and phase metrology tool for 193-nm lithography
Author(s): Andrew J. Merriam; James J. Jacob
Show Abstract
Reticle haze measurement by spectroscopic elipsometry
Author(s): Young-Hoon Kim; Seong-Jin Kim; Jin-Back Park; Mi-Lim Jung; Sung-Hyuck Kim; Seung-Wook Park; Jai-Sun Kyoung; Il-Sin An; Hye-Keun Oh
Show Abstract
Advanced edge roughness measurement application for mask metrology
Author(s): D. Chase; R. Kris; R. Katz; A. Tam; L. Gershtein; R. Falah; N. Wertsman
Show Abstract
Calibration procedures and application of the PTB photomask CD standard
Author(s): W. Häßler-Grohne; C.G. Frase; S. Czerkas; K. Dirscherl; B. Bodermann; W. Mirandé; G. Ehret; H. Bosse
Show Abstract
Measuring line-edge roughness of masks with DUV light
Author(s): Stan Stokowski; David Alles
Show Abstract
Image placement accuracy of single-membrane stencil masks for e-beam lithography
Author(s): Minoru Kitada; Satoshi Yusa; Naoko Kuwahara; Hiroshi Fujita; Tadahiko Takikawa; Hisatake Sano; Morihisa Hoga
Show Abstract
Electron beam pattern generator sensitivity to target potentials
Author(s): Junru Ruan; John Hartley
Show Abstract
Improved modeling of fogging and loading effect correction
Author(s): Sanghee Lee; Byunggook Kim; Hakseung Han; Dongseok Nam; Seongyong Moon; Seongwoon Choi; Woosung Han
Show Abstract
Analysis of various blur effects on mask CD distortion
Author(s): Hak-Seung Han; Sang-Hee Lee; Byung-Gook Kim; Seong-Yong Moon; Sung Woon Choi; Woo-Sung Han
Show Abstract
Characterization and qualification of the Jeol JBX9000-MVII e-beam writer for the 90nm node and its integration in a photomask manufacturing line
Author(s): Luigi Raffaele; Carlo Pogliani; Gian Luca Cassol; Giovanni Bianucci; Shiaki Murai; Shoichi Murata; Ryugo Hikichi; Hidenao Katsuki; Shigeru Noguchi
Show Abstract
Mask repair induced defect study and characterization
Author(s): Noor Azlina Ismail; Kader Ibrahim; S. Mogana Sundharam
Show Abstract
Advanced photomask repair technology for 65nm lithography (4)
Author(s): Yasutoshi Itou; Yoshiyuki Tanaka; Osamu Suga; Yasuhiko Sugiyama; Ryoji Hagiwara; Haruo Takahashi; Osamu Takaoka; Tomokazu Kozakai; Osamu Matsuda; Katsumi Suzuki; Mamoru Okabe; Syuichi Kikuchi; Atsushi Uemoto; Anto Yasaka; Tatsuya Adachi; Naoki Nishida
Show Abstract
Mask repair for the 65nm technology node
Author(s): Tod Robinson; Andrew Dinsdale; Ron Bozak; Roy White; David A Lee; Ken Roessler
Show Abstract
Integrated post tape outflow for fast design to mask turn-around time
Author(s): Chi-Yuan Hung; Qingwei Liu; Liguo Zhang; Shumay Shang; George E. Bailey; Andrew Jost; Travis Brist
Show Abstract
Simulation-based scattering bar generation for 65nm and beyond
Author(s): Chi-Yuan Hung; Qingwei Liu; Liguo Zhang
Show Abstract
The effect of calibration feature weighting on OPC optical and resist models: investigating the influence on model coefficients and on the overall model fitting
Author(s): Amr Abdo; Rami Fathy; Kareem Madkour; James Oberschmidt; Daniel Fischer; Mohamed Talbi
Show Abstract
The novel approach for optical proximity correction using genetic algorithms
Author(s): Tetsuaki Matsunawa; Hirokazu Nosato; Hidenori Sakanashi; Masahiro Murakawa; Nobuharu Murata; Tsuneo Terasawa; Toshihiko Tanaka; Nobuyuki Yoshioka; Osamu Suga; Tetsuya Higuchi
Show Abstract
Analytical approximations of the source intensity distributions
Author(s): Yuri Granik; Kostas Adam
Show Abstract
Off-target model based OPC
Author(s): Mark Lu; Curtis Liang; Dion King; Lawrence S. Melvin III
Show Abstract
A new methodology for quantifying OPC recipe accuracy
Author(s): David Ziger; Dave Gerold; Charles King; Frank Amoroso; Joshua Tuttle; Robert Lugg
Show Abstract
Dense OPC for 65nm and below
Author(s): Nicolas B. Cobb; Yuri Granik
Show Abstract
FPGA chip performance improvement with gate shrink through alternating PSM 90nm process
Author(s): Chun-Chi Yu; Ming-Feng Shieh; Erick Liu; Benjamin Lin; Jonathan Ho; Xin Wu; Petrisor Panaite; Manoj Chacko; Yunqiang Zhang; Wen-Kang Lei
Show Abstract
Three dimensional EUV simulations: a new mask near field and imaging simulation system
Author(s): Peter Evanschitzky; Andreas Erdmann
Show Abstract
Area measurements for simulation-based dispositioning of masks
Author(s): Gerard Luk-Pat; Jiunn-Huang Chen; Ray Morgan; Eric Schneider
Show Abstract
A simulation-based defect disposition flow for incoming mask quality assurance
Author(s): Don Lee; Brian Chu; T.Y. Fang; W.B. Shieh; Susan Hu; Jiunn-Hung Chen; Ray Morgan
Show Abstract
Full-chip poly gate critical dimension control using model based lithography verification
Author(s): Daniel N. Zhang; Juhwan Kim; Lantian Wang; Zongwu Tang
Show Abstract
Comparative study of simulations and experiments for contact array patterns on attenuated phase shifting mask
Author(s): Thomas Henkel; Martin Sczyrba; Christoph Noelscher
Show Abstract
Methods for benchmarking photolithography simulators: Part III
Author(s): Mark D. Smith; Trey Graves; Jeffrey D. Byers; Chris A. Mack
Show Abstract
Comparison of different approaches for the correction of residual mask proximity effects
Author(s): E. Mittermeier; T. Franke
Show Abstract
Interface creation to build a powerful photolithography simulation platform
Author(s): Marie-Sophie Costes; Gerhard Braun; Xavier Cuinet; Caroline Fossati; Jean-Luc Liotard; Mireille Commandré
Show Abstract
Detailed characterization of inspection tools: capabilities and limitations of the KLA 576
Author(s): J. Heumann; R. Moses; C. Holfeld; N. Schmidt; C. Aquino
Show Abstract
Application of the unified mask data format based on OASIS for VSB EB writers
Author(s): Toshio Suzuki; Junji Hirumi; Osamu Suga
Show Abstract
Cleaning of low thermal expansion material substrates for mask blanks in EUV lithography
Author(s): Sean Eichenlaub; Sebastian Dietze; Yoshiaki Ikuta; Helmut Popp; Kurt Goncher; Pat Marmillion; Abbas Rastegar
Show Abstract

© SPIE. Terms of Use
Back to Top