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Proceedings of SPIE Volume 5853

Photomask and Next-Generation Lithography Mask Technology XII
Editor(s): Masanori Komuro
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Volume Details

Volume Number: 5853
Date Published: 28 June 2005
Softcover: 113 papers (1110) pages
ISBN: 9780819458537

Table of Contents
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Requirements for mask technology from the view point of SOC and FLASH memory trends
Author(s): Akira Imai; Noboyuki Yoshioka; Tetsuro Hanawa; Koichiro Narimatsu; Kunihiro Hosono; Kazuyuki Suko
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Study of stress birefringence for 193-nm immersion photomasks
Author(s): Eric Cotte; Michael Selle; Karsten Bubke; Silvio Teuber
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A study of storage life extension for high performance chemically amplified resist coated blanks
Author(s): Sin-Ju Yang; Sung-Min Seo; Sang-Hoon Ko; Han-Sun Cha; Geung-Won Kang; Kee-Soo Nam; Woong-Won Seo; Woo-Kyun Jung; Hyun-Kyoon Cho; Jin-Min Kim; Sang-Soo Choi
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High performance FEP-171 resist process in combination with NTAR7 and NTAR5 chrome and the Sigma7300 DUV mask writer
Author(s): Kezhao Xing; Johan Karlsson; Adisa Paulson; Charles Bjornberg; Axel Lundvall; Peter Hogfeldt; Jukka Vedenpaa; Robin Goodoree; Mans Bjuggren
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A new method for correcting proximity and fogging effects by using the EID model of variable shaped beam for 65-nm node
Author(s): Eui-Sang Park; Hyun-Joon Cho; Jin-Min Kim; Sang-Soo Choi
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Prediction of etch profile and CD variation due to dry etch using TRAVIT software tool
Author(s): S. Babin; K. Bay; S. Okulovsky
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Photomask lifetime issues in ArF lithography
Author(s): Florence Eschbach; Peter Coon; Barbara Greenebaum; Anurag Mittal; Peter Sanchez; Daniel Tanzil; Grace Ng; Henry Yun; Archita Sengupta
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Monitoring system of CD error analysis for the 90-nm node mask manufacturing
Author(s): Sang-Yong Yu; Soon-Ho Kim; Byung-Cheol Cha; Yong-Hoon Kim; Seung-Woon Choi; Hee-Sun Yoon; Woo-Sung Han
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Cryogenic aerosol cleaning of photomasks
Author(s): S. Banerjee; C. C. Lin; S. Su; H. F. Chung; W. Brandt; K. Tang
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An investigation of a new generation of progressive mask defects on the pattern side of advanced photomasks
Author(s): Kaustuve Bhattacharyya; Mark Eickhoff; Brian Grenon; Mark Ma; Sylvia Pas
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Resist baking conversion from wafers to mask-substrates
Author(s): Hideo Kobayashi
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Simulation of resist heating effect with e-beam lithography using distributed processing (DP)
Author(s): Won-Tai Ki; Byung-Sup Ahn; Ji-Soong Park; Seung-Woon Choi; Sang-Back Ma; Woo-Sung Han
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Implementing chemically amplified resist to 10kV raster e-beam process in photomask manufacturing
Author(s): Sook-Kyeong Kim; Byung-Gook Kim; Seong-Yong Moon; Sung-Woon Choi; Woo-Sung Han
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New slit scan developer system for advanced 45-nm mask making
Author(s): Sharon Wang; Shinsuke Miyazaki; Makoto Kozuma
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Application of a wafer development process to mask making
Author(s): Gaston Lee; Celine Berger; Christian Burgel; Axel Feicke; Rusty Cantrell; Martin Tschinkl
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Patterning of Ta/SiO2 high transmission EAPSM material for 193nm technology
Author(s): Corinna Koepernik; H. W. Becker; J. Butschke; U. Buttgereit; M. Irmscher; L. Nedelmann; F. Schmidt; S. Teuber
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Evaluation of e-beam sensitive CARs for advanced mask making
Author(s): Axel Feicke; Mathias Irmscher; Anatol Schwersenz; Martin Tschinkl
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Evaluation of the new-type ESPACER adopted for its removal after post-exposure bake process
Author(s): Yoshihiro Saida; Takashi Okubo; Jun Sasaki; Toshio Konishi; Motohiko Morita
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Novel acid-free cleaning process for mask blanks
Author(s): Harald Koster; Karsten Branz; Uwe Dietze; Peter Dress; Guenter Hess
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A study for the control of chemical residuals on photomasks by using a thermal treatment for 65-nm node
Author(s): Han-Byul Kang; Jong-Min Kim; Yong-Dae Kim; Hyun-Joon Cho; Sang-Soo Choi
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Investigation of pellicle influence on reticle flatness
Author(s): Christopher Lee; Kenneth Racette; Monica Barrett
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A reticle quality management strategy in wafer fabs addressing progressive mask defect growth problem at low k1 lithography
Author(s): Kaustuve Bhattacharyya; Mark Eickhoff; Mark Ma; Sylvia Pas
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Comprehensive reticle handling and storage approach for optimized fab yields
Author(s): Toshiya Umeda; Hideaki Kawashima
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Reticle SEM specifications required for lithography simulation
Author(s): Mitsuyo Kariya; Eiji Yamanaka; Satoshi Tanaka; Takahiro Ikeda; Shinji Yamaguchi; Masamitsu Itoh; Hideaki Kobayashi; Tsukasa Kawashima; Shogo Narukawa
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An economic analysis for optimal distributed computing resources for mask synthesis and tape-out in production environment
Author(s): Chris Cork; Robert Lugg; Manoj Chacko; Shimon Levi
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Pattern based mask process correction: impact on data quality and mask writing time
Author(s): Emile Sahouria; Amanda Bowhill; Steffen Schulze
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An extension method of metal layer layout in mask data preparation for robust processes
Author(s): Kensuke Tsuchiya; Kazuhisa Ogawa; Satomi Nakamura; Kazuyoshi Kawahara; Hidetoshi Oishi; Hidetoshi Ohnuma
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Reducing alternating phase shift mask (Alt-PSM) write-time through mask data optimization
Author(s): Bryan S. Kasprowicz; Paul J. M. van Adrichem; Manoj Chacko
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Contact CD variation check and contact/metal overlay check using a model based full chip verification software tool
Author(s): Lantian Wang; Juhwan Kim; Daniel Zhang; Zongwu Tang; Minghui Fan
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Model-based full-chip verification for 65nm lithography process development
Author(s): Juhwan Kim; Lantian Wang; Daniel Zhang; Zongwu Tang
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Etch modeling in RET synthesis and verification flow
Author(s): Daniel F. Beale; James P. Shiely
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Interaction and balance of mask write time and design RET strategies
Author(s): Yuan Zhang; Rick Gray; O. Sam Nakagawa; Puneet Gupta; Henry Kamberian; Guangming Xiao; Rand Cottle; Chris Progler
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Effectiveness of mask data process using OASIS format
Author(s): Katsuji Tabara; Mitsuo Sakurai; Seiji Makino; Takahisa Itoh; Tomoyuki Okada
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Evaluation of mask data preparation with OASIS and P10
Author(s): Koki Kuriyama; Yuji Machiya; Kiyoshi Yamasaki; Shogo Narukawa; Naoya Hayashi
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Multi-layer masks: manufacturability considerations
Author(s): Artur Balasinski
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Model-based scattering bars implementation for 65nm and 45nm nodes using IML technology
Author(s): Michael Hsu; Doug Van Den Broeke; Tom Laidig; Kurt E. Wampler; Uwe Hollerbach; Robert Socha; J. Fung Chen; Stephen Hsu; Xuelong Shi
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A proposal for the contact hole assist feature printing checker in IML
Author(s): Jason Shieh; Robert Socha; Xuelong Shi; Alek Chen
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Lithography process related OPC development and verification demonstration on a sub-90nm poly layer
Author(s): Chi-Yuan Hung; Qingwei Liu; Liguo Zhang; Shumay Shang; Andrew Jost
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Process model quality assessment by sensitivity analysis
Author(s): Qiliang Yan; Lawrence S. Melvin; James P. Shiely
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Flexible sparse and dense OPC algorithms
Author(s): Nick Cobb
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The application of phase grating to CLM technology for the sub-65nm node optical lithography
Author(s): Gi-Sung Yoon; Sung-Hyuck Kim; Ji-Soong Park; Sun-Young Choi; Chan-Uk Jeon; In-Kyun Shin; Sung-Woon Choi; Woo-Sung Han
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Low K1 post printing using phase shifting mask
Author(s): Yung-Tin Chen; M. T. Lee; C. P. Chen; Y. Y. Huang; Timothy Wu; B. C. Ho
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Photomask etch and profile control of 65nm chromeless phase lithography masks using scanning probe metrology
Author(s): Scott A. Anderson; Alex Buxbaum; Ajay Kumar; Ibrahim Ibrahim
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Mask enhancement factor for 2D local CD error
Author(s): Yukiyasu Arisawa; Shoji Mimotogi
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ArF photoresist parameter optimization for mask error enhancement factor reduction
Author(s): Chang Ho Lee; Seok Han; Kyoung Sil Park; Sangwoong Yoon; Hye Young Kang; Hyun Wook Oh; Ji Eun Lee; Young Ho Kim; Tae Sung Kim; Hye-Keun Oh
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Effects of mask bias on the mask error enhancement factor (MEEF) for low k1 lithography process
Author(s): Yu Ya Chang; Yuan-Hsun Wu; Chiang-Lin Shih; Jengping Lin; Francis Kan; Jimmy Lin
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Simulation based OPC for contact pattern using 193 nm lithography
Author(s): Martin Keck; Christof Bodendorf; Jorg Thiele; Alberto Lopez Gomez; Ying-Chung Tseng; Teng-Yen Huang
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Precision process calibration and CD predictions for low-k1 lithography
Author(s): Ting Chen; Sangbong Park; Gabriel Berger; Tamer H. Coskun; Joep de Vocht; Fung Chen; Linda Yu; Stephen Hsu; Doug van den Broeke; Robert Socha; Jungchul Park; Keith Gronlund; Todd Davis; Vince Plachecki; Tom Harris; Steve Hansen; Chuck Lambson
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A study for polarized illumination effects in photo resist
Author(s): Junjiang Lei; Min Bai; Jim Shiely; Lin Zhang
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The capability of a 1.3NA µstepper using 3D EMF mask simulations
Author(s): Will Conley; Jeff Meute; James Webb; Douglas Goodman; Robert Maier
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Evaluations of optical performance for micro-trench on quartz etch in ArF lithography
Author(s): Won-Suk Ahn; Hyuk-Joo Kwon; Seong-Yong Moon; Seong-Woon Choi; Woo-Sung Han
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Efficient modeling of immersion lithography in an aggressive RET mask synthesis flow
Author(s): Min Bai; Junjiang Lei; Lin Zhang; James P. Shiely
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Application of CPL mask for whole chip 65nm DRAM patterning
Author(s): Orson Lin; Richard Hung; Booky Lee; Yuan-Hsun Wu; Makoto Kozuma; Chiang-Lin Shih; Jengping Lin; Michael Hsu; Stephen D. Hsu
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Wafer topography-aware optical proximity correction for better DOF margin and CD control
Author(s): Puneet Gupta; Andrew B. Kahng; Chul-Hong Park; Kambiz Samadi; Xu Xu
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Investigation of defect repair methods for EUVL mask blanks through aerial-image simulations
Author(s): Takeo Hashimoto; Iwao Nishiyama
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Evaluation of defect repair of EUV mask absorber layer
Author(s): Tsukasa Abe; Tsuyoshi Amano; Hiroshi Mohri; Naoya Hayashi; Yuusuke Tanaka; Fumiaki Kumasaka; Iwao Nishiyama
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Mask magnification of 8X will be also helpful for EUVL
Author(s): Kiwamu Takehisa
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Stencil pattern accuracy of EPL masks
Author(s): Hiroshi Sugimura; Tsukasa Yamazaki; Takashi Susa; Yoshiyuki Negishi; Takashi Yoshii; Hideyuki Eguchi; Akira Tamura
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Preliminary study on EPL mask repair technology for 45-nm node
Author(s): Nobuyuki Iriki; Hiroshi Arimoto; Yo Yamamoto; Akira Tamura
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Image placement of large window-size membrane for EPL and LEEPL mask
Author(s): Hideyuki Eguchi; Tomoya Sumida; Takashi Susa; Yoshiyuki Negishi; Toshiaki Kurosu; Takashi Yoshii; Tsukasa Yamazaki; Kenta Yotsui; Hiroshi Sugimura; Akira Tamura
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Experimental analysis of image placement accuracy of single-membrane masks for LEEPL
Author(s): Minoru Kitada; Yuuki Aritsuka; Satoshi Yusa; Naoko Kuwahara; Hiroshi Fujita; Tadahiko Takikawa; Hisatake Sano; Morihisa Hoga
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Defect inspection strategy of LEEPL masks
Author(s): Isao Yonekura; Shinji Kunitani; Takashi Susa; Kojiro Itoh; Akira Tamura; Satoru Maruyama
A prospective modular platform of the mask pattern automatic inspection using the die-to-database method
Author(s): Syarhei Avakaw; Aliaksandr Korneliuk; Alena Tsitko
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Defect quality management of 248nm alt-PSM in low-k1 condition
Author(s): Yoshikazu Nagamura; Satoshi Momose; Akira Imai; Kunihiro Hosono; Yasutaka Morikawa; Kouichirou Kojima; Hiroshi Mohri
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Introduction of a die-to-database verification tool for the entire printed geometry of a die: geometry verification system NGR2100 for DFM
Author(s): Tadashi Kitamura; Kazufumi Kubota; Toshiaki Hasebe; Futoshi Sakai; Shinichi Nakazawa; Neeti Vohra; Masahiro Yamamoto; Masahiro Inoue
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Advanced photomask repair technology for 65nm lithography (3)
Author(s): Yasutoshi Itou; Yoshiyuki Tanaka; Yasuhiko Sugiyama; Ryoji Hagiwara; Haruo Takahashi; Osamu Takaoka; Tomokazu Kozakai; Osamu Matsuda; Katsumi Suzuki; Mamoru Okabe; Syuichi Kikuchi; Atsushi Uemoto; Anto Yasaka; Tatsuya Adachi; Naoki Nishida
Improved cycle time of mask repair by optimizing nanomachining with photolithographic imaging simulation
Author(s): Peter Brooker; Tod Robinson; John Lewellen; Bob Naber; Ron Bozak; David A. Lee
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Second level printing of advanced phase shift masks using DUV laser lithography
Author(s): Charles Howard; Keun-Taek Park; Marcus Scherer; Svetomir Stankovic; Rusty Cantrell; Mark Herrmann
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An efficient resolution enhancement technique flow for 65nm logic poly layer
Author(s): Paul J. M. van Adrichem; Manoj Chacko; Bryan S. Kasprowicz
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Exploring new high speed mask aware RET verification flows
Author(s): Patrick Martin; Christopher J. Progler; Young-mog Ham; Bryan Kasprowicz; Rick Gray; James N. Wiley; Zongchang Yu; Jun Ye
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Chip level lithography verification system with artificial neural networks
Author(s): Jae-pil Shin; Jin-sook Choi; Dae-hyun Jung; Jee-hyong Lee; Moon-hyun Yoo; Jeong-taek Kong
Improving OPC quality via interactions within the design-to-manufacturing flow
Author(s): Puneet Gupta; Andrew B. Kahng; C.-H. Park
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Dual layer patterning failures in complex RET processes using ORC tools and pre- or post-optical proximity correction strategy
Author(s): Christophe Couderc; Jerome Belledent; Amandine Borjon; Yorick Trouiller; Frank Sundermann; Kevin Lucas; Jean-Christophe Urbani; Franck Foussadier; Yves Rody; Kyle Patterson; Stanislas Baron
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The unified mask data format based on OASIS for VSB EB writers
Author(s): Toshio Suzuki; Junji Hirumi; Yutaka Hojyo; Yuichi Kawase; Shinji Sakamoto; Koki Kuriyama; Syogo Narukawa; Morihisa Hoga
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Character-build standard-cell layout technique for high-throughput character-projection EB lithography
Author(s): Takeshi Fujino; Yoshihiko Kajiya; Masaya Yoshikawa
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RET masks for the final frontier of optical lithography
Author(s): J. Fung Chen; Douglas van den Broeke; Stephen Hsu; Michael C. W. Hsu; Tom Laidig; Xuelong Shi; Ting Chen; Robert J. Socha; Uwe Hollerbach; Kurt E. Wampler; Jungchul Park; Sangbong Park; Keith Gronlund
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Simultaneous source mask optimization (SMO)
Author(s): Robert Socha; Xuelong Shi; David LeHoty
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Correction of long-range effects applied to the 65-nm node
Author(s): Jerome Belledent; James Word; Yorick Trouiller; Christophe Couderc; Corinne Miramond; Olivier Toublan; Jean-Damien Chapon; Stanislas Baron; Amandine Borjon; Franck Foussadier; Christian Gardin; Kevin Lucas; Kyle Patterson; Yves Rody; Frank Sundermann; Jean-Christophe Urbani
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Through-pitch characterization and printability for 65nm half-pitch alternating aperture phase shift applications
Author(s): Vicky Philipsen; Leonardus Leunissen; Rudi De Ruyter; Rik Jonckheere; Patrick Martin; Clare Wakefield; Stephen Johnson; Michael Cangemi; Alex Buxbaum; Troy Morrison
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Evaluation of quartz dry etching profile for the PSM lithography performance
Author(s): Toru Komizo; Satoru Nemoto; Yosuke Kojima; Takashi Ohshima; Takashi Yoshii; Toshio Konishi; Kazuaki Chiba; Yasutaka Kikuchi; Masao Otaki; Yoshimitsu Okuda
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Impact of the absorber thickness variation on the imaging performance of ArF immersion lithography
Author(s): Masaki Yoshizawa; Vicky Philipsen; Leonardus H. A. Leunissen
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Feasibility study of double exposure lithography for 65nm and 45nm node
Author(s): Stephen Hsu; Douglas Van Den Broeke; J. Fung Chen; Jungchul Park; Michael C. W. Hsu
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A novel robust optimization method of exposure and mask conditions for beyond 65 nm-node lithography
Author(s): Koichi Takeuchi; Kazuya Iwase; Ken Ozawa; Fumikatsu Uesawa
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Photomask process development for next generation lithography
Author(s): Shiho Sasaki; Kimio Itoh; Akiko Fujii; Nobuhito Toyama; Hiroshi Mohri; Naoya Hayashi
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Local IP evaluations of EPL reticle with 4 mm-sq Si membranes
Author(s): Kaoru Koike; Hiroshi Sakaue; Hiroshi Arimoto; Tukasa Yamazaki; Hiroshi Sugimura; Takashi Susa; Kojiro Ito; Akira Tamura
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Recent progress in the fabrication of low defect density mask blanks
Author(s): Andy Ma; Patrick Kearney; Dave Krick; Rajul Randive; Ira Reiss; Paul Mirkarimi; Eberhard Spiller
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New EUVL ML capping design for ML blank multiple reuses
Author(s): Pei-yang Yan; Eberhard Spiller
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EUV mask image placement management in writing, registration, and exposure tools
Author(s): Eric Cotte; Uwe Dersch; Christian Holfeld; Uwe Mickan; Holger Seitz; Thomas Leutbecher; Gunter Hess
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Implementation of an efficient defect classification methodology for advanced reticle inspection
Author(s): Paul Yu; Vincent Hsu; Ellison Chen; Rick Lai; Kong Son; Weimin Ma; Peter Chang; Jackie Chen
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Advances with the new AIMS fab 193 2nd generation: a system for the 65 nm node including immersion
Author(s): Axel M. Zibold; E. Poortinga; H. v. Doornmalen; R. Schmid; T. Scherubl; W. Harnisch
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Print characterization of photomasks from next-generation deep-ultra-violet laser pattern generator
Author(s): Curt Jackson; Robert Kiefer; Peter Buck; David Mellenthin; John Manfredo; Vishal Garg; Jason Hickethier; Sarah Cohen; Cris Morgante; Paul C. Allen; Eric Christenson; Michael White
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