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Proceedings of SPIE Volume 5754

Optical Microlithography XVIII
Editor(s): Bruce W. Smith
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Volume Details

Volume Number: 5754
Date Published: 12 May 2005
Softcover: 178 papers (1930) pages
ISBN: 9780819457349

Table of Contents
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Thirty years of lithography simulation
Author(s): Chris A. Mack
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Characterization of ArF immersion process for production
Author(s): Jeng-Horng Chen; Li-Jui Chen; Tun-Ying Fang; Tzung-Chi Fu; Lin-Hung Shiu; Yao-Te Huang; Norman Chen; Da-Chun Oweyang; Ming-Che Wu; Shih-Che Wang; John C.H. Lin; Chun-Kuang Chen; Wei-Ming Chen; Tsai-Sheng Gau; Burn J. Lin; Richard Moerman; Wendy Gehoel-van Ansem; Eddy van der Heijden; Fred de Jong; Dorothe Oorschot; Herman Boom; Martin Hoogendorp; Christian Wagner; Bert Koek
How to describe polarization influence on imaging
Author(s): M. Totzeck; P. Graupner; T. Heil; A. Gohnermeier; O. Dittmann; D. Krahmer; V. Kamenov; J. Ruoff; D. Flagello
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Resist blur and line edge roughness
Author(s): Gregg M. Gallatin
Hyper-numerical aperture imaging challenges for 193 nm
Author(s): James E. Webb; Robert L. Maier; Douglas S. Goodman; Will Conley
First microprocessors with immersion lithography
Author(s): D. Gil; T. Bailey; D. Corliss; M. J. Brodsky; P. Lawson; M. Rutten; Z. Chen; N. Lustig; T. Nigussie; K. Petrillo; C. Robinson
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Resist profile control in immersion lithography using scatterometry measurements
Author(s): I. Pollentier; M. Ercken; P. Foubert; S. Y. Cheng
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25 nm immersion lithography at 193 nm wavelength
Author(s): Bruce W. Smith; Yongfa Fan; Michael Slocum; Lena Zavyalova
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Controlled contamination studies in 193-nm immersion lithography
Author(s): V. Liberman; S. T. Palmacci; D. E. Hardy; M. Rothschild; A. Grenville
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A methodology for the characterization of topography induced immersion bubble defects
Author(s): Michael Kocsis; Peter De Bisschop; Mireille Maenhoudt; Young-Chang Kim; Greg Wells; Scott Light; Tony DiBiase
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Matching multiple-feature CD response from exposure tools: analysis of error sources with their impact in low-k1 regime
Author(s): Jo Finders; Mircea Dusa
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The challenge of high-volume 193-nm semiconductor manufacturing
Author(s): U. P. Schroder; S. Poelders; T. Fischer; K. Schumacher; A. Kiss; A. Frangen; D. Nees; M. Kubis; G. Erley; B. Janke
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Implementation of KrF 0.29 k1 lithography
Author(s): Hyeong Soo Kim; Seok Kyun Kim; Young Sik Kim; Sang Man Bae; Dong Heok Park; Young Deuk Kim; Yoon Suk Hyun; Hyoung Reun Kim; Keun Kyu Kong; Min Seok Son; Yong Soon Jung; Bong Ho Choi
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Optical lithography technologies for 45-nm node CMOS
Author(s): Shoji Mimotogi; Fumikatsu Uesawa; Suigen Kyoh; Hiroharu Fujise; Eishi Shiobara; Mikio Katsumata; Hiroki Hane; Tomohiro Sugiyama; Koutaro Sho; Maki Miyazaki; Kazuhiro Takahata; Hideki Kanai; Kazuya Sato; Kohji Hashimoto
Analysis of precise CD control for 45nm node and beyond
Author(s): Yuhei Sumiyoshi; Koji Mikami; Yasuo Hasegawa; Toshiyuki Yoshihara; Yoshiyuki Nagai; Akihiro Yamada; Ken-ichiro Mori; Takahisa Ogawa; Shigeyuki Suda
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Status of 157 nm lithography and prospects for immersion
Author(s): Kiyoshi Fujii; Takuya Hagiwara; Seiji Matsuura; Toshiyuki Ishimaru; Yoshihisa Matsubara; Wataru Wakamiya
A 157-nm immersion microstepper
Author(s): M. Switkes; T. M. Bloomstein; M. Rothschild; E. W. Arriola; T. H. Morrison
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Simulation of the effect of a resist-surface bound air bubble on imaging in immersion lithography
Author(s): Peter De Bisschop; Andreas Erdmann; Andreas Rathsfeld
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Aberration retrieval for high-NA optical systems using the extended Nijboer-Zernike theory
Author(s): Peter Dirksen; Joseph J.M. Braat; Augustus J.E.M. Janssen; Ad Leeuwestein
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Dynamic laser speckle in optical projection lithography: causes, effects on CDU and LER, and possible remedies
Author(s): Tor Sandstrom; Christer Rydberg; Jorgen Bengtsson
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Characterization, modeling, and impact of scattered light in low-k1 lithography
Author(s): Bruno La Fontaine; Yunfei Deng; Mircea Dusa; Alden Acheta; Anita Fumar-Pici; Harish Bolla; Beverly Cheung; Bhanwar Singh; Harry J. Levinson
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A novel focus monitoring method using double side chrome mask
Author(s): Yoshihiro Shiode; Hiroshi Morohoshi; Atsushi Takagi; Kohei Fujimaru; Kazushi Mizumoto; Yuki Takahashi
High transmission mask technology for 45nm node imaging
Author(s): Will Conley; Mike Cangemi; Bryan S. Kasprowicz; Matt Lassiter; Lloyd C. Litt; Marc Cangemi; Rand Cottle; Mark Smith; Wei Wu; Jonathan Cobb; Rusty Carter; Young-mog Ham; Kevin Lucas; Bernie Roman; Chris Progler
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Lithography manufacturing implementation for 65 nm and 45 nm nodes with model-based scattering bars using IML technology
Author(s): Michael Hsu; Doug Van Den Broeke; Tom Laidig; Kurt E. Wampler; Uwe Hollerbach; Robert Socha; J. Fung Chen; Stephen Hsu; Xuelong Shi
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Era of double exposure in 70 nm node DRAM cell
Author(s): Sang-Jin Kim; Joon-Soo Park; Tae-Young Kim; Byeong-Soo Kim; Gi-Sung Yeo; Seok-Hwan Oh; Sang-Gyun Woo; Han-Ku Cho; Joo-Tae Moon
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Modeling of electromagnetic effects from mask topography at full-chip scale
Author(s): Konstantinos Adam
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The impact of mask topography on CD control
Author(s): Jonathan L. Cobb; Bernard J. Roman; Vladimir Ivin; M. Sarychev
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Optimized hardware and software for fast full-chip simulation
Author(s): Yu Cao; Yen-Wen Lu; Luoqi Chen; Jun Ye
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Fabrication of sub 45 nm random patterns through centerline phase-shifting mask (CL-PSM)
Author(s): Jeung-woo Lee; Seiji Matsuura; Kiyoshi Fujii
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Strategies of optical proximity correction dedicated to chromeless phase lithography for 65 and 45 nm node
Author(s): Emilien Robert; Philippe Thony; Kevin Lucas; Daniel Henry; Bryan Kasprowicz; Sergei V. Postnikov; Will E. Conley; Wei Wu; Lloyd Litt
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Mask induced polarization effects at high NA
Author(s): Andrew Estroff; Yongfa Fan; Anatoly Bourov; Bruce Smith; Philippe Foubert; L. H. A. Leunissen; Vicky Philipsen; Yuri Aksenov
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Three-dimensional rigorous simulation of mask-induced polarization
Author(s): Xiuhong Wei; H. P. Urbach; Arthur Wachters; Yuri Aksenov
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Investigation of polarization effects on new mask materials
Author(s): Karsten Bubke; Silvio Teuber; Ingo Hoellein; Hans Becker; Holger Seitz; Ute Buttgereit
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High refractive index immersion fluids for 193 nm immersion lithography
Author(s): Bridgette Budhlall; Gene Parris; Peng Zhang; Xiaoping Gao; Zarka Zarkov; Brenda Ross; Simon Kaplan; John Burnett
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Immersion lithography fluids for high NA 193 nm lithography
Author(s): Jianming Zhou; Yongfa Fan; Anatoly Bourov; Neal Lafferty; Frank Cropanese; Lena Zavyalova; Andrew Estroff; Bruce W. Smith
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Long-term 193-nm laser irradiation of thin-film-coated CaF2 in the presence of H2O
Author(s): V. Liberman; M. Switkes; M. Rothschild; S. T. Palmacci; J. H. C. Sedlacek; D. E. Hardy; A. Grenville
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Development of polarized-light illuminator and its impact
Author(s): Hisashi Nishinaga; Noriaki Tokuda; Soichi Owa; Shigeru Hirukawa; Osamu Tanitsu; Takehito Kudo; Hirohisa Tanaka
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Lithographic performance of a dual-stage 0.93NA ArF step and scan system
Author(s): Rian Rubingh; Marco Moers; Manfred Suddendorf; Peter Vanoppen; Aernout Kisteman; Michael Thier; Vladan Blahnik; Eckhard Piper
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Development of ArF immersion exposure tool
Author(s): Hitoshi Nakano; Hideo Hata; Kazuhiro Takahashi; Mikio Arakawa; Takahito Chibana; Tokuyuki Honda; Keiko Chiba; Sunao Mori
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Immersion lithography exposure systems: today's capabilities and tomorrow’s expectations
Author(s): Jan Mulkens; Bob Streefkerk; Martin Hoogendorp; Richard Moerman; Martijn Leenders; Fred de Jong; Marco Stavenga; Herman Boom
Progressive ArF exposure tool for 65nm node lithography
Author(s): Nobuyuki Irie; Masato Hamatani; Masahiro Nei
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Imaging enhancements by polarized illumination: theory and experimental verification
Author(s): Carsten Kohler; Wim de Boeij; Koen van Ingen-Schenau; Mark van de Kerkhof; Jos de Klerk; Haico Kok; Geert Swinkels; Jo Finders; Jan Mulkens; Damian Fiolka; Tilmann Heil
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XLA-200: the third-generation ArF MOPA light source for immersion lithography
Author(s): Toshihiko Ishihara; Robert Rafac; Wayne J. Dunstan; Fedor Trintchouk; Christian Wittak; Richard Perkins; Robert Bergstedt; Walter Gillespie
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High-power injection lock laser platform for ArF dry/wet lithography
Author(s): H. Mizoguchi; T. Inoue; J. Fujimoto; T. Yamazaki; T. Suzuki; T. Matsunaga; S. Sakanishi; M. Kaminishi; Y. Watanabe; T. Ohta; M. Nakane; M. Moriya; T. Nakaike; M. Shinbori; M. Yoshino; T. Kawasuji; H. Nogawa; T. Ito; H. Umeda; S. Tanaka; H. Taniguchi; Y. Sasaki; J. Kinoshita; T. Abe; H. Tanaka; H. Hayashi; K. Miyao; M. Niwano; A. Kurosu; M. Yashiro; H. Nagano; N. Matsui; T. Mimura; K. Kakizaki; M. Goto
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Liquid immersion lithography at 157 nm
Author(s): Takuya Hagiwara; Toshiyuki Ishimaru; Shou Tsuji; Kiyoshi Fujii; Yasuo Itakura; Osamu Wakabayashi; Youichi Kawasa; Keiji Egawa; Ikuo Uchino; Akira Sumitani; Yusuke Saito; Kazuhiko Maeda
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Second generation fluids for 193 nm immersion lithography
Author(s): Sheng Peng; Roger H. French; Weiming Qiu; Robert C. Wheland; Min Yang; Michael F. Lemon; Michael K. Crawford
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CD control: Whose turn is it?
Author(s): Wolfram Koestler; Martin Rossiger; Stephan Wege; Thomas Zell
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Robust lithography process control methodology anticipating CD after etching using scatterometry below 65nm node
Author(s): Tokihisa Kaneguchi; Atsushi Someya; Hiroichi Kawahira
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Hurdles in low k1 mass production
Author(s): Donggyu Yim; Hyunjo Yang; Chanha Park; Jongkyun Hong; Jaeseung Choi
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The application criterion of model-based optical proximity correction in a low k1 process
Author(s): Doo-Youl Lee; In-Sung Kim; Sung-Gon Jung; Myoung-Ho Jung; Joo-On Park; Seok-Hwan Oh; Sang-Gyun Woo; Han-Ku Cho; Joo-Tae Moon
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Wavefront-based tool selection for critical level imaging
Author(s): Jacek K. Tyminski; John Lewellen
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An investigation of the photolithographic contributors to wafer-level colinearity in thin film head manufacturing
Author(s): Gary Newman; Hai Sun
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Alignment robustness for 90 nm and 65 nm node through copper alignment mark integration optimization
Author(s): Scott Warrick; Paul Hinnen; Rob Morton; Kevin Cooper; Pierre-Olivier Sassoulas; Jerome Depre; Ramon Navarro; Richard van Haren; Clyde Browning; Doug Reber; Henry Megens
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Feature profile control and the influence of scan artifacts
Author(s): Richard Dare; Paul R. Rowland; Terrence E. Zavecz
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Novel robust optimization method of lithographic conditions for correlative multilayers beyond 65 nm node
Author(s): Koichi Takeuchi; Ken Ozawa; Fumikatsu Uesawa; Hiroichi Kawahira
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Technology qualification for 65-nm node
Author(s): Jacek K. Tyminski; Toshiharu Nakashima
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A simulation performance framework using in situ metrology
Author(s): Joseph J. Bendik; Yuji Yamaguchi; Lyle G. Finkner; Adlai H. Smith
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Evaluation of extendibility for Fourier diffraction theory for topographical mask structure under hyper NA lithography
Author(s): Satoshi Tanaka; Akiko Mimotogi; Soichi Inoue
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Simulations of immersion lithography
Author(s): Min Bai; Junjiang Lei; Lin Zhang; James P. Shiely
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Methods for benchmarking photolithography simulators: part III
Author(s): Mark D. Smith; Trey Graves; Jeffrey D. Byers; Chris A. Mack
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Improving lithography CD control by correcting proximity and long range variations in electron beam mask writer
Author(s): Eui-Sang Park; Hyun-Joon Cho; Jin-Min Kim; Sang-Soo Choi
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Exploring the 65nm frontier of alternating phase shifting masks with a quartz dry etch chemistry
Author(s): S. A. Anderson; R. Neubauer; A. Kumar; I. Ibrahim
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Pellicle process effects in critical dimension fluctuation
Author(s): Byung-Cheol Cha; Yong-Hoon Kim; Hee-Sun Yoon; Woo-Sung Han
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Enhancement of the image fidelity and pattern accuracy of a DUV laser generated photomask through next-generation hardware
Author(s): Robert Kiefer; Curt Jackson; Vishal Garg; David Mellenthin; John Manfredo; Peter Buck; Sarah Cohen; Cris Morgante; Paul C. Allen; Michael White
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Models for reticle performance and comparison of direct measurement
Author(s): Terrence E. Zavecz; Ray Hoobler
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The modeling of immersion liquid by using quantum chemical calculation
Author(s): Jun Irisawa; Takashi Okazoe; Takeshi Eriguchi; Osamu Yokokoji
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Potential of solid immersion lithography using I-line and KrF light source
Author(s): Dongseok Nam; Tom D. Milster; Tao Chen
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Study on the shoreline for water immersion ArF lithography
Author(s): Chang-Moon Lim; Tae-Seung Eom; Seo-Min Kim; Cheolkyu Bok; Won-Kwang Ma; Gyu-Dong Park; Seung-Chan Moon; Jin-Woong Kim
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Impact of polarization for an attenuated phase-shift mask with ArF hyper-NA lithography
Author(s): Takashi Sato; Ayako Endo; Akiko Mimotogi; Shoji Mimotogi; Kazuya Sato; Satoshi Tanaka
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Polarization gratings for the DUV: modeling and experimental results
Author(s): P. Triebel; D. Mademann; M. Schrenk; P. Weissbrodt
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Study of high NA imaging with polarized illumination
Author(s): Tomoyuki Matsuyama; Toshiharu Nakashima
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Polarization impact on partially coherent imaging
Author(s): Gek Soon Chua; Cho Jui Tay; Chenggen Quan; Qunying Lin
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Polarization influences through the optical path
Author(s): George E. Bailey; Kostas Adam
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Analytic theory of symmetric two-beam interference in high-NA optical lithography
Author(s): Shinn-Sheng Yu; Burn J. Lin
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A methodology to calibrate line-end gauge position for better modeling performance
Author(s): Chi-Yuan Hung; Ching-Heng Wang; Qing-Wei Liu
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OPC for double exposure lithography
Author(s): Thorsten Winkler; Wolfgang Dettmann; Mario Hennig; Wolfram Koestler; Molela Moukara; Joerg Thiele; Karsten Zeiler
High accuracy 65nm OPC verification: full process window model vs. critical failure ORC
Author(s): Amandine Borjon; Jerome Belledent; Shumay D. Shang; Olivier Toublan; Corinne Miramond; Kyle Patterson; Kevin Lucas; Christophe Couderc; Yves Rody; Frank Sundermann; Jean-Christophe Urbani; Stanislas Baron; Yorick Trouiller; Patrick Schiavone
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Etch modeling for accurate full-chip process proximity correction
Author(s): Daniel F. Beale; James P. Shiely
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Modified optical proximity correction model to compensate pattern density induced optical proximity effect
Author(s): Jaehyun Kang; Juhyun Kim; Sukwon Jung; Honglae Kim; Keeho Kim
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OPC modeling by genetic algorithm
Author(s): W. C. Huang; C. M. Lai; B. Luo; C. K. Tsai; C. S. Tsay; C. W. Lai; C. C. Kuo; R. G. Liu; H. T. Lin; B. J. Lin
Current status of 157-nm lithography using a full-field scanner
Author(s): Toshiyuki Ishimaru; Seiji Matsuura; Miyoshi Seki; Kiyoshi Fujii; Ryo Koizumi; Yuji Hakataya; Akihiko Moriya
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Development and evaluation of an F2 laser for immersion interference lithography at 157nm
Author(s): Yasuo Itakura; Youichi Kawasa; Osamu Wakabayashi; Masato Moriya; Shinji Nagai; Akira Sumitani; Takuya Hagiwara; Toshiyuki Ishimaru; Shou Tsuji; Kiyoshi Fujii; Wataru Wakamiya
Properties of ultra-large CaF2 crystals for the high NA optics
Author(s): Y. Hatanaka; H. Yanagi; T. Nawata; Y. Inui; T. Mabuchi; K. Yasumura; E. Nishijima; T. Fukuda
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6 kHz MOPA light source for 193 nm immersion lithography
Author(s): Walter D. Gillespie; Toshihiko Ishihara; William N. Partlo; George X. Ferguson; Michael R. Simon
Improvement of the lifetime of the optical coatings under high power laser irradiations
Author(s): Ryuji Biro; Tetsuzo Ito; Seiji Kuwabara; Hirotaka Fukushima; Hideo Akiba; Keisui Banno; Yasuyuki Suzuki; Minoru Otani; Kazuho Sone
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Kinetics of laser induced changes of characteristic optical properties in Lithosil with 193nm excimer laser exposure
Author(s): Ute Natura; Rolf Martin; Gordon von der Goenna; Michael Kahlke; Gabriele Fasold
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Development of fluoropolymers for pellicle in 157nm lithography
Author(s): Shinji Okada; Hiromasa Yamamoto; Ikuo Matsukura; Naoko Shirota; Yuichirou Ishibashi; Hironao Sasaki; Iwao Higashikawa; Wataru Wakamiya
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Hardness, elastic modulus, and fracture toughness bulk properties in Corning calcium fluoride
Author(s): Julie L. Ladison; James J. Price; John D. Helfinstine; William R. Rosch
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Mask enhancer technology for 45-nm node contact hole fabrication
Author(s): Takashi Yuito; Vincent Wiaux; Lieve Van Look; Geert Vandenberghe; Shigeo Irie; Takahiro Matsuo; Akio Misaka; Hisashi Watanabe; Masaru Sasago
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Novel illumination apertures for resolution-enhanced technology and through-pitch critical dimension control
Author(s): I. Hsiung Huang; Ling Chieh Lin; Chin L. Lin
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Assessment of 5-pole illumination for 65nm-node contact holes
Author(s): Francois Weisbuch; Scott Warrick; Will Conley; Jerome Depre
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A novel assist feature for contact holes to overcome problematic pitches
Author(s): Mars Yang; Francis Lin; Elvis Yang; T. H. Yang; K. C. Chen; Joseph Ku; C. Y. Lu
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Applications of CPL mask technology for sub-65nm gate imaging
Author(s): Lloyd C. Litt; Will Conley; Wei Wu; Richie Peters; Colita Parker; Jonathan Cobb; Bryan S. Kasprowicz; Doug van den Broeke; J. C. Park; Ramkumar Karur-Shanmugam
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Tunable transmission phase mask options for 65/45nm node gate and contact processing
Author(s): Bryan S. Kasprowicz; Will Conley; Young-Mog Ham; Michael J. Cangemi; Nicolo Morgana; Marc J. Cangemi; Rand Cottle; Christopher J. Progler; Wei Wu; Lloyd C. Litt; Jonathan Cobb; Bernie Roman
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Post printing optimization with chromeless phase shifting mask
Author(s): Yung-Tin Chen
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Larger depth of focus for increased yield
Author(s): W. Thomas Cathey; Gregory Johnson
Simple microscale selective patterning on a single nanowire by using an optical microscope
Author(s): Dong Jin Oh; Boone Won; Kang Hyun Kim; Gyu Tae Kim
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Influence of illumination non-uniformity on pattern fidelity
Author(s): Michael A. Creighton
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Hot spot free diffractive DUV-homogenizer for high NA-illumination
Author(s): Matthias Cumme; Mirko Riethmuller; Dirk Mademann; Manfred Schrenk; Peter Weissbrodt
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Influence of illumination tilt on imaging
Author(s): Mark C. Phillips; Steven D. Slonaker; Chris Treadway; Greg Darby
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The effect of polarized 193nm irradiation on photomask haze formation
Author(s): Y. D. Kim; H. B. Kang; Yuan Zhang; Chuong Tran; Nigel Farrar; Jennifer Qin; Barry Rockwell; H. J. Cho; Rand Cottle; David Chan; Pat Martin; S. S. Choi; Chris Progler
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In-line monitoring of acid and base contaminants at low ppt levels for 193nm lithography
Author(s): Roel Gronheid; Rida Al-Horr
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Some aspects on mechanisms responsible for contamination of optical components in DUV lithographic exposure tools
Author(s): Hans Fosshaug; Mats Ekberg; Gunnar Kylberg
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Long-term Zernike lens aberration measurement
Author(s): Patrick Lomtscher; Gerhard Kunkel; Bill Roberts
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Development of aerial image based aberration measurement technique
Author(s): Tsuneyuki Hagiwara; Naoto Kondo; Irihama Hiroshi; Kosuke Suzuki; Nobutaka Magome
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Mid-range flare measurement and modeling
Author(s): Kazuya Sato; Kenji Chiba; Kei Hayasaki; Kenji Kawano
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Characterization of imaging performance: considering both illumination intensity profile and lens aberration
Author(s): Takeaki Ebihara; Hideyuki Saito; Takafumi Miyaharu; Shuichi Okada; Yoshihiro Shiode; Takahisa Shiozawa; Toshiyuki Yoshihara
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Are pattern and probe aberration monitors ready for prime time?
Author(s): Garth C. Robins; Andrew R. Neureuther
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Considering the flare by introducing the random aberration and non-conserved aberration
Author(s): Masato Shibuya; Nobuaki Watanabe; Hiromi Ezaki; Suezou Nakadate
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Automated aberration extraction using phase wheel targets
Author(s): Lena Zavyalova; Anatoly Bourov; Bruce W. Smith
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The evaluation of aberration effects according to pattern shape and duty ratio
Author(s): Ji-Eun Lee; Seung-Wook Park; Chang-Ho Lee; Hyun-Wook Oh; So-Yoon Bae; Hye-Keun Oh
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Understanding of the depth of focus evolution from an analysis of the iso-focal point
Author(s): S. Manakli; Y. Trouiller; P. Schiavone
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Correction of the phase retardation caused by intrinsic birefringence in deep UV lithography
Author(s): Alexander Serebriakov; Florian Bociort; Joseph Braat
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The basis for lithographic modeling
Author(s): Frederick Dill
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Examination of the prevalence and abundance of noncondensable, nonreactive optical surface contaminants in the scanner environment
Author(s): F. Belanger; P. Cate; A. Grayfer; R. Petersen; D. Ruede
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Double patterning scheme for sub-0.25 k1 single damascene structures at NA=0.75, λ=193nm
Author(s): M. Maenhoudt; J. Versluijs; H. Struyf; J. Van Olmen; M. Van Hove
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Polarized light for resolution enhancement at 70 nm and beyond
Author(s): Rainer Pforr; Mario Hennig; Max Hoepfl; Tomoyuki Matsuyama; Winfried Meier; Hisashi Nishinaga
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