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Proceedings of SPIE Volume 5753

Advances in Resist Technology and Processing XXII
Editor(s): John L. Sturtevant
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Volume Details

Volume Number: 5753
Date Published: 4 May 2005
Softcover: 126 papers (1282) pages
ISBN: 9780819457332

Table of Contents
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Materials for future lithography
Author(s): Seung Wook Chang; Da Yang; Junyan Dai; Nelson Felix; Daniel Bratton; Kousuke Tsuchiya; Young-Je Kwark; Juan-Pablo Bravo-Vasquez; Christopher K. Ober; Heidi B. Cao; Hai Deng
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Material design for immersion lithography with high refractive index fluid (HIF)
Author(s): Takashi Miyamatsu; Yong Wang; Motoyuki Shima; Shiro Kusumoto; Takashi Chiba; Hiroki Nakagawa; Katsuhiko Hieda; Tsutomu Shimokawa
Impact of water and top-coats on lithographic performance in 193-nm immersion lithography
Author(s): Shinji Kishimura; Roel Gronheid; Monique Ercken; Mireille Maenhoudt; Takahiro Matsuo; Masayuki Endo; Masaru Sasago
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Water distribution within immersed polymer films
Author(s): Bryan D. Vogt; Christopher L. Soles; Vivek M. Prabhu; Sushil K. Satija; Eric K. Lin; Wen-li Wu
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Study and control of the interfacial mass transfer of resist components in 193-nm immersion lithography
Author(s): Shinichi Kanna; Haruki Inabe; Kei Yamamoto; Shinji Tarutani; Hiromi Kanda; Kazuyoshi Mizutani; Kazuyuki Kitada; Seiji Uno; Yasumasa Kawabe
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Progress toward developing high performance immersion compatible materials and processes
Author(s): Karen Petrillo; Kaushal Patel; Rex Chen; Wenjie Li; Ranee Kwong; Peggy Lawson; Rao Varanasi; Chris Robinson; Steven J. Holmes; Dario Gil; Kurt Kimmel; Mark Slezak; Gary Dabbagh; Takashi Chiba; Tsutomu Shimokawa
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Understanding the photoresist surface-liquid interface for ArF immersion lithography
Author(s): Will Conley; Robert J. LeSuer; Frank F. Fan; Allen J. Bard; Chris Taylor; Pavlos Tsiartas; Grant Willson; Andrew Romano; Ralph Dammel
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Study of barrier coats for application in immersion 193-nm lithography
Author(s): Francis Houlihan; Wookyu Kim; Raj Sakamuri; Keino Hamilton; Alla Dimerli; David Abdallah; Andrew Romano; Ralph R. Dammel; Georg Pawlowski; Alex Raub; Steve Brueck
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Resist development status for immersion lithography
Author(s): Hiromitsu Tsuji; Masaaki Yoshida; Keita Ishizuka; Tomoyuki Hirano; Kotaro Endo; Mitsuru Sato
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Silsesquioxane-based 193 nm bilayer resists: characterization and lithographic evaluation
Author(s): Hiroshi Ito; Hoa D. Truong; Sean D. Burns; Dirk Pfeiffer; Wu-Song Huang; Mahmoud M. Khojasteh; P. Rao Varanasi; Mike Lercel
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A new 193nm resist
Author(s): Toshiaki Fukuhara; Taku Hirayama; Yuji Shibasaki; Shinji Ando; Mitsuru Ueda; Masayuki Endo; Masaru Sasago
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Evaluation of a novel photoacid generator for chemically amplified photoresist with ArF exposure
Author(s): Toshikage Asakura; Hitoshi Yamato; Tobias Hintermann; Masaki Ohwa
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Development of optically transparent cyclic olefin photoresist binder resins
Author(s): Larry F. Rhodes; Chun Chang; Cheryl Burns; Dennis A. Barnes; Brian Bennett; Larry Seger; Xiaoming Wu; Andy Sobek; Mike Mishak; Craig Peterson; Leah Langsdorf; Hideo Hada; Hiroaki Shimizu; Kazuhito Sasaki
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In-line chemical shrink process for 70 nm contact hole patterns by the room-temperature electrostatic self-assembly
Author(s): Jung Hwan Hah; Subramanya Mayya; Mitsuhiro Hata; Hyun-Woo Kim; Man-Hyoung Ryoo; Sang-Gyun Woo; Han-Ku Cho; Joo-Tae Moon; Byung-Il Ryu
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Double exposure for the contact layer of the 65-nm node
Author(s): Dah-Chung Owe-Yang; S. S. Yu; Harrison Chen; C. Y. Chang; Bang-Chein Ho; John C. Lin; Burn J. Lin
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New shrinkage technology for nano-contact hole formation
Author(s): Geunsu Lee; Jungwoo Park; Wonwook Lee; Cheolkyu Bok; Changmoon Lim; Sungchan Moon
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Impregnation of resist with functional molecules using supercritical fluid: a new approach to resist engineering for advanced lithography
Author(s): Hideo Namatsu; Mitsuru Sato
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A novel contact hole shrink process for the 65-nm-node and beyond
Author(s): Richard Peters; Patrick Montgomery; Cesar Garza; Stanley Filipiak; Tab Stephens; Dan Babbitt
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Contact hole shrink process with novel chemical shrink materials
Author(s): Takayoshi Abe; Tooru Kimura; Takashi Chiba; Motoyuki Shima; Shiro Kusumoto; Tsutomu Shimokawa
Novel chemical shrinkage material for small contact hole and small space patterning
Author(s): Mitsuhiro Hata; Jung-Hwan Hah; Hyun-Woo Kim; Man-Hyoung Ryoo; Sang-Gyun Woo; Han-Ku Cho
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A novel post exposure bake technique to improve CD uniformity over product wafers
Author(s): Tomoyuki Takeishi; K. Hayasaki; Tsuyoshi Shibata
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0.31k1 ArF lithography for 70-nm DRAM
Author(s): Cheolkyu Bok; Ki-Lyoung Lee; Jun-Taek Park; Young-Sun Hwang; Tae-Seung Eom; Seo-Min Kim; Geunsu Lee; Jae-Chang Jung; Chang-Moon Lim; Seung-Chan Moon; Jin-Woong Kim
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Advanced rinse process alternatives for reduction of photolithography development cycle defects
Author(s): Nickolas L. Brakensiek; Peng Zhang; Danielle King; Craig Ghelli
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Pattern collapse and line width roughness reduction by surface conditioner solutions for 248-nm lithography
Author(s): Peng Zhang; Madhukar B. Rao; Manuel Jaramillo; Bridget Horvath; Brenda Ross; Ted Paxton; Todd Davis; Pat Cook; David Witko
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A new long range proximity effect in chemically amplified photoresist processes: chemical flare
Author(s): Timothy Brunner; Z. Chen; Kuang-Jung Chen; S. Scheer
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Lithographic importance of acid diffusion in chemically amplified resists
Author(s): David Van Steenwinckel; Jeroen H. Lammers; L. H. A. Leunissen; J. A. J. M. Kwinten
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Resist materials for advanced lithography
Author(s): Theodore H. Fedynyshyn; Roger F. Sinta; Indira Pottebaum; Alberto Cabral
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Interfacial structure of photoresist thin films in developer solutions
Author(s): Vivek M. Prabhu; Bryan D. Vogt; Wen-Li Wu; Jack F. Douglas; Eric K. Lin; Sushil K. Satija; Dario L. Goldfarb; Hiroshi Ito
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Dissolution behavior of resist polymers studied using quartz crystal microbalance method
Author(s): Minoru Toriumi
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Studies of acid diffusion in low Ea chemically amplified photoresists
Author(s): G. M. Wallraff; D. R. Medeiros; C. E. Larson; M. Sanchez; Karen Petrillo; Wu-Song Huang; C. Rettner; B. W. Davis; Linda Sundberg; William D. Hinsberg; F. A. Houle; J. A. Hoffnagle; Dario Goldfarb; K. Temple; J. Bucchignano
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The effect of film thickness on the dissolution rate and hydrogen bonding behavior of photoresist polymer thin films
Author(s): Lovejeet Singh; Peter J. Ludovice; Clifford L. Henderson
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Using mesoscale simulation to explore photoresist line edge roughness
Author(s): Jason E. Meiring; Timothy B. Michaelson; Andrew T. Jamieson; Gerard M. Schmid; Carlton Grant Willson
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The effects of chemical gradients and photoresist composition on lithographically generated line edge roughness
Author(s): Timothy B. Michaelson; Adam R. Pawloski; Alden Acheta; Yukio Nishimura; C. Grant Willson
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Line edge roughness reduction by plasma curing photoresists
Author(s): Arpan P. Mahorowala; Kuang-Jung Chen; Ratnam Sooriyakumaran; Aleksandra Clancy; Dakshi Murthy; Stacy Rasgon
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Origin of LER and its solution
Author(s): Geunsu Lee; Tae-Seung Eom; Cheolkyu Bok; Changmoon Lim; Seung-Chan Moon; Jinwoong Kim
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Effect of post development process for resist roughness
Author(s): Koutarou Sho; Tsuyoshi Shibata; Eishi Shiobara; Shinichi Ito
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Electron beam direct write process development for sub 45nm CMOS manufacturing
Author(s): J. Todeschini; Laurent Pain; S. Manakli; B. Icard; V. DeJonghe; B. Minghetti; M. Jurdit; D. Henry; V. Wang
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193nm dual layer organic BARCs for high NA immersion lithography
Author(s): David J. Abdallah; Mark Neisser; Ralph R. Dammel; Georg Pawlowski; S. Ding; Francis M. Houlihan; Andrew R. Romano; J. J. Biafore; Alex Raub
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Hybrid BARC approaches for FEOL and BEOL intergration
Author(s): Willie Perez; Stephen Turner; Nick Brakensiek; Lynne Mills; Larry Wilson; Paul Popa
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Organosiloxane based bottom antireflective coating for 193nm lithography
Author(s): Bo Li; Kim Do; Jason Stuck; Songyuan Xie; Roger Leung; Tiffany Nguyen; Jaswinder Gill; Lei Jin; Wenya Fan; Shilpa Thanawala; Faith Zhou; Nancy Iwamoto; Emma Brouk; Joseph Kennedy
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EUV resist patterning performance from the Intel microexposure tool (MET)
Author(s): Heidi B. Cao; Wang Yueh; Jeanette Roberts; Bryan Rice; Robert Bristol; Manish Chandhok
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Material design and evaluation of nanocomposite resist for next generation lithography
Author(s): Kenneth E. Gonsalves; Muthiah Thiyagarajan; Kim Dean; Patricia Santiago; L. Rendon; Augustin Jeyakumar; Clifford L. Henderson
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Area selective atomic layer deposition: use of lithographically defined polymer masking layers for the deposition of titanium dioxide
Author(s): Ashwini Sinha; Dennis W. Hess; Clifford L. Henderson
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Novel negative tone photodefinable low dielectric constant hybrid films
Author(s): Thomas J. Markley; Scott J. Weigel; Chris P. Kretz
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32nm node technology development using interference immersion lithography
Author(s): Harry Sewell; Diane McCafferty; Louis Markoya; Eric Hendrickx; Jan Hermans; Kurt Ronse
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All i-line lift-off T-gate process and materials
Author(s): Medhat A. Toukhy; Ping-Hung Lu; Salem K. Mullen
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Evaluation of functional properties of imaging materials for water immersion lithography
Author(s): William D. Hinsberg; J. A. Hoffnagle; G. M. Wallraff; C. E. Larson; F. A. Houle; Linda Sundberg; Hoa D. Truong; Blake W. Davis; Robert D. Allen
Show Abstract
Top antireflective coating process for immersion lithography
Author(s): Jae Chang Jung; Sung Koo Lee; Keun Do Ban; Seo Min Kim; Cheolkyu Bok; Chang Moon Lim; Seung Chan Moon
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Anti-bubble topcoat for immersion lithography
Author(s): Laurent Marinier; Yuri Aksenov; Rob Morton; David Van Steenwinckel; Peter Zandbergen
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Amplification of the index of refraction of aqueous immersion fluids by ionic surfactants
Author(s): Kwangjoo Lee; Joy Kunjappu; Steffen Jockusch; Nicholas J. Turro; Tatjana Widerschpan; Jianming Zhou; Bruce W. Smith; Paul Zimmerman; Will Conley
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A new monocyclic fluoropolymer for 157-nm and 193-nm photoresists
Author(s): Takashi Sasaki; Yoko Takebe; Osamu Yokokoji; Akihiko Otoguro; Kiyoshi Fujii
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Synthesis of fluorinated materials for 193-nm immersion lithography and 157-nm lithography
Author(s): T. Yamashita; T. Ishikawa; T. Yoshida; T. Hayamai; Takayuki Araki; H. Aoyama; T. Hagiwara; Toshiro Itani; Kiyoshi Fujii
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Study of 157 nm resists with full field exposure tools
Author(s): Yayi Wei; Nickolay Stepanenko; Michael Sebald; Christoph Hohle; Francis M. Houlihan; Raj Sakamuri; Alla Dimerli; Andrew Romano; Ralph R. Dammel
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Tailoring thermal property of ArF resists resins through monomer structure modification for sub-70-nm contact hole application by reflow process
Author(s): Ichiki Takemoto; Youngjoon Lee; Yusuke Fuji; Isao Yoshida; Kazuhiko Hashimoto; Takayuki Miyagawa; Satoshi Yamaguchi; Kenji Takahashi; Shinji Konishi
Cycloolefin copolymer containing hindered hydroxyl group for 193nm photoresist
Author(s): Seung Duk Cho; Hyun Sang Joo; Dong Chul Seo; Ji Young Song; Kyoung Mun Kim; Joo Hyeon Park; Jae Chang Jung; Sung Koo Lee; Cheol Kyu Bok; Seung Chan Moon
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Nanomolecular resists with adamantane core for 193-nm lithography
Author(s): Jin-Baek Kim; Tae-Hwan Oh; Kyoungmi Kim
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Comparison of single-, bi-, and tri-layer resist process
Author(s): Isao Nishimura; Hiroyuki Ishii; Norihiko Sugie; Naka-atsu Yoshimura; Masato Tanaka; Hiromi Egawa; Keiji Konno; Makoto Sugiura; Hikaru Sugita; Junichi Takahashi; Tsutomu Shimokawa
A new method to characterize conformality of BARC coatings
Author(s): Runhui Huang; Heping Wang; Anwei Qin
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ARC and gap fill material with high etch rate for advanced dual damascene process
Author(s): Tetsuya Shinjo; Satoshi Takei; Yasushi Sakaida; Anwei Qin; Yasuyuki Nakajima
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Optimization of 248nm bottom anti-reflective coatings with thin film and high etch rate on real device
Author(s): MyoungSoo Kim; HakJoon Kim; KewChan Shim; JeHa Jeon; MyungGoon Gil; YongWook Song; Tomoyuki Enomoto; Takahiro Sakaguchi; Yasuyuki Nakajima
Show Abstract
New polymer platform of BARC for ArF lithography
Author(s): Yoshiomi Hiroi; Takahiro Kishioka; Rikimaru Sakamoto; Daisuke Maruyama; Yasushi Sakaida; Takashi Matsumoto; Yasuyuki Nakajima; SangMun Chon; YoungHo Kim; Sangwoong Yoon; Seok Han; YoungHoon Kim; EunYoung Yoon
Application of bi-layer resist on 70 nm node memory devices
Author(s): Yool Kang; Jin Hong; Shi-Yong Lee; Hyung-Rae Lee; Man-Hyoung Ryoo; Sang-Gyun Woo; Han-Ku Cho; Joo-Tae Moon
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Bilayer resists based on polyhedral oligomeric silsesquioxane for 193-nm lithography
Author(s): Ramakrishnan Ganesan; Jae-Hak Choi; Hyo-Jin Yun; Young-Gil Kwon; Kyoung-Seon Kim; Tae-Hwan Oh; Jin-Baek Kim
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New advanced BARC materials for ultra-high NA applications
Author(s): James B. Claypool; Marc Weimer; Vandana Krishnamurthy; Wendy Gehoel; Koen van Ingen Schenau
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Process optimization of developer soluble organic BARC and its characteristics in CMOS devices
Author(s): Yeon Hwa Lim; Young Keun Kim; Jae Sung Choi; Jeong Gun Lee
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Topography impacts on line-width control for gate level lithography
Author(s): Allen H. Gabor; Scott D. Halle; Chidam Kallingal
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Comparison between organic spin-on BARC and carbon-containing CVD stack for 65-nm gate patterning
Author(s): Jean-Damien Chapon; Catherine Chaton; Pascal Gouraud; Marcel Broekaart; Scott Warrick; Isabelle Guilmeau; Yorick Trouiller; Jerome Belledent
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Overcoming pattern collapse of ultra high resolution dense lines obtained with EUV resists
Author(s): A. Jouve; J. Simon; J. Foucher; T. David; J.-H. Tortai; Harun Solak
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Inorganic polymer resists for EUVL
Author(s): Juan Pablo Bravo-Vasquez; Young-Je Kwark; Christopher Kemper Ober; Heidi B. Cao; Hai Deng
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Development of electron beam resists based on amorphous polyphenols with low molecular weight and narrow dispersion
Author(s): Taku Hirayama; Daiju Shiono; Shogo Matsumaru; Toshiyuki Ogata; Hideo Hada; Junichi Onodera; Tadashi Arai; Toshio Sakamizu; Atsuko Yamaguchi; Hiroshi Shiraishi; Hiroshi Fukuda; Mitsuru Ueda
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Block co-polymerized polyimide resists for KrF lithography and EB lithography with high dry etching resistance
Author(s): Sucheta Mukund Gorwadkar; Taro Itatani; Hiroshi Itatani
Show Abstract
Performance of EUV photoresists on the ALS micro exposure tool
Author(s): Thomas Koehler; Robert L. Brainard; Patrick P. Naulleau; David Van Steenwinckel; Jeroen H. Lammers; Kenneth A. Goldberg; Joseph F. Mackevich; Peter Trefonas
Show Abstract
Quantification of EUV resist outgassing
Author(s): Wang Yueh; Heidi B. Cao; Vani Thirumala; Hokkin Choi
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Study on the resist materials leaching from resist film during immersion exposure for 193nm using QCM method
Author(s): Atsushi Sekiguchi; Yoshihisa Sensu; Youichi Minami
Show Abstract
Studies on leaching of photoresist components by water
Author(s): Seung Keun Oh; Jong Yong Kim; Young Ho Jung; Jae Woo Lee; Deog Bae Kim; Jaehyun Kim; Geun Su Lee; Sung Koo Lee; Keun Do Ban; Jae Chang Jung; Cheol Kyu Bok; Seung Chan Moon
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Optimization of equipment for 193-nm immersion processing
Author(s): Takafumi Niwa; Masashi Enomoto; Satoru Shimura; Hideharu Kyoda; Tetsu Kawasaki; Junichi Kitano
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Influence of the watermark in immersion lithography process
Author(s): Daisuke Kawamura; Tomoyuki Takeishi; Koutarou Sho; Kentarou Matsunaga; Naofumi Shibata; Kaoru Ozawa; Satoru Shimura; Hideharu Kyoda; Tetsu Kawasaki; Seiki Ishida; Takayuki Toshima; Yasunobu Oonishi; Shinichi Ito
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High-RI resist polymers for 193 nm immersion lithography
Author(s): Andrew K. Whittaker; Idriss Blakey; Heping Liu; David J. T. Hill; Graeme A. George; Will Conley; Paul Zimmerman
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Fluids and resists for hyper NA immersion lithography
Author(s): J. Christopher Taylor; Ramzy Shayib; Sumarlin Goh; Charles R. Chambers; Will Conley; Shang-Ho Lin; C. Grant Willson
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Nanocomposite liquids for 193 nm immersion lithography: a progress report
Author(s): George Chumanov; David D. Evanoff; Igor Luzinov; Viktor Klep; Bogdan Zdryko; Will Conley; Paul Zimmerman
Newly developed polymer bound photoacid generator resist for sub-100-nm pattern by EUV lithography
Author(s): Kenneth E. Gonsalves; Muthiah Thiyagarajan; Kim Dean
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Effect of hard bake process on LER
Author(s): Munirathna Padmanaban; David Rentkiewicz; SangHo Lee; Chisun Hong; Dongkwan Lee; Dalil Rahman; Raj Sakamuri; Ralph R. Dammel
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A novel patterning method of low-resistivity metals
Author(s): Chang-Ho Noh; Jin-Young Kim; Ho-Chul Lee; Ok-Chae Hwang; Sung-Heon Cho; Ki-Yong Song; Jong-Min Kim
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Characterization of 100 micron thick positive photoresist on 300-mm wafers
Author(s): Warren W. Flack; Ha-Ai Nguyen; Elliott Capsuto; Kelly Abreau
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A comparison of new thick photoresists for solder bumping
Author(s): Warren W. Flack; Ha-Ai Nguyen; Mark Neisser; Ernesto Sison; Ping Hung Lu; Bob Plass; Toshimichi Makii; Yoshio Murakami
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Study on nano imprint lithography by the pre-exposure process (PEP)
Author(s): Yoshiyuki Kono; Atsushi Sekiguchi; Yoshihiko Hirai; Shigeo Arasaki; Koichi Hattori
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Novel single-layer i-line positive resist lift-off process with oxidation step in develop
Author(s): Jianxin Zhu; David N. Tomes; Frank Yaghmaie; Rosemary Bell
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Photoresists for CO2-based next-generation microlithography
Author(s): Mary Kate Boggiano; Colin Wood; Joseph M. DeSimone
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Encapsulation of light emitting materials and photo-patterning using B-cyclodextrin
Author(s): Jin-Baek Kim; Ji-Young Park
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On-site mixing and preparation of polyimide resists for reliable nanopatterning
Author(s): Sucheta Gorwadkar; Taro Itatani; Masanori Komuro; Akinori Shiotani; Hiroshi Itatani
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Block-copolymerized polyimides for optical waveguides
Author(s): Taro Itatani; Sucheta Gorwadkar; Akinori Shiotani; Masahiro Igusa; Kenji Yonei; Joji Maeda; Hiroshi Itatani
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Multilayer ultra thick resist development for MEMS
Author(s): Yasushi Washio; Takahiro Senzaki; Yasuo Masuda; Koji Saito; Hiroyuki Obiya
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Development status of thick film photoresist for semiconductor packaging
Author(s): Koichi Misumi; Koji Saito; Hiroyuki Obiya
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Analysis for collapse behavior of resist pattern in short develop time process using atomic force microscope
Author(s): Masakazu Sanada; Osamu Tamada; Atsushi Ishikawa; Akira Kawai
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Mechanism study of defect improvement by short develop time process
Author(s): Osamu Tamada; Masakazu Sanada
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Mechanical strength of resist film analyzed by tip indentation method
Author(s): Osamu Tamada; Masakazu Sanada; Atsushi Ishikawa; Takayoshi Niiyama; Akira Kawai
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Combined pattern collapse and LWR control at the 70 nm node through application of novel surface conditioner solutions
Author(s): Peng Zhang; Manuel Jaramillo; Madhukar B. Rao; Brenda Ross; Bridget Horvath; Patrick Wong; Wendy Gehoel; Stephan Sinkwitz
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Deprotonation mechanism of poly(4-hydroxystyrene) and its derivative
Author(s): Atsuro Nakano; Kazumasa Okamoto; Yukio Yamamoto; Takahiro Kozawa; Seiichi Tagawa; Toshiyuki Kai; Hiroaki Nemoto; Tsutomu Shimokawa
Diffusion contributions to line end shortening in 193-nm photolithography
Author(s): Eun-Kyung Son; Jung-Woo Kim; Sang-Hyang Lee; Chan-Sik Park; Jae-Woo Lee; Jaehyun Kim; Geun-Su Lee; Sung-Koo Lee; Keun-Do Ban; Jae-Chang Jung; Cheol Kyu Bok; Seung-Chan Moon
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Synthesis of copolymers containing diazoketo groups and their application as DUV resists
Author(s): Jin-Baek Kim; Kyoung-Seon Kim
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Comparison of resist outgassing at wavelengths from 193 nm to 13 nm
Author(s): Wolf-Dieter Domke; Karl Kragler; Marion Kern; Klaus Lowack; Oliver Kirch; Michele Bertolo
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Advanced microlithography process with multiple-chemical trim technology
Author(s): Te Hung Wu; Ling Chieh Lin; C. L. Lin
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Evaluation of photo resist coating performance of small dispense nozzle size in photolithographic spin coating process
Author(s): Xiao Li; Tom Lehmann; Warren Greene
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Throughput increase by adjustment of the BARC drying time with coat track process
Author(s): Nickolas L. Brakensiek; Ryan Long
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Managing effects in CD control from PED and PEB in advanced DUV photomask manufacturing using FEP-171 resist
Author(s): Adisa Paulsson; Kezhao Xing; Hans Fosshaug; Axel Lundvall; Charles Bjoernberg; Johan Karlsson
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Effects of wet-cleans and surface treatments on the adhesion of a photoresist to HDP-oxide substrate
Author(s): Shih-Chi Fu; Jieh-Jang Chen; Feng-Jia Shiu; Ching-Sen Kuo; Gwo-Yun Shiau; Chia-Shiung Tsia; Chung Wang
Study of barrier coats for protection against airborne contamination in 157-nm lithography
Author(s): Francis Houlihan; Raj Sakamuri; Keino Hamilton; Alla Dimerli; David Rentkiewicz; Andrew Romano; Ralph R. Dammel; Yayi Wei; Nickolay Stepanenko; Michael Sebald; Christoph Hohle; Will Conley; Daniel Miller; Toshiro Itani; Masato Shigematsu; Etsuro Kawaguchi
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ArF photoresist parameter optimization for mask error enhancement factor reduction
Author(s): Chang Ho Lee; Seok Han; Kyung Sil Park; Hye Young Kang; Hyun Wook Oh; Ji Eun Lee; Kyung Me Kim; Young Ho Kim; Tae Sung Kim; Hye-Keun Oh
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Global planarization of gap-filling process for low-k dual damascene applications
Author(s): Ruei Hung Hsu; I. H. Huang; Ling Chieh Lin; Benjamin Szu-Min Lin
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Profile simulation of SU-8 thick film resist
Author(s): Yoshihisa Sensu; Atsushi Sekiguchi; Satoshi Mori; Nao Honda
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Equilibrium water uptake and diffusion behavior in model polynorbornene photoresist polymers
Author(s): Trevor Hoskins; Paul J. Roman; Peter J. Ludovice; Clifford L. Henderson
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Characterization of property variation in ultra-thin polymer films from molecular simulation
Author(s): Lovejeet Singh; Clifford L. Henderson; Peter J. Ludovice
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Effect of film composition on the performance of interdigitated electrode methods used for chemically amplified photoresist characterization: methods for analyzing photoresist materials containing base quencher
Author(s): Cody Berger; Clifford L. Henderson
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Reduction of line edge roughness and post resist trim pattern collapse for sub 60 nm gate patterns using gas-phase resist fluorination
Author(s): Patrick K. Montgomery; Richard Peters; Cesar Garza; Jonathan Cobb; Bill Darlington; Colita Parker; Stan Filipiak; Danny Babbitt
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