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Proceedings of SPIE Volume 5722

Physics and Simulation of Optoelectronic Devices XIII
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Volume Details

Volume Number: 5722
Date Published: 28 April 2005
Softcover: 61 papers (588) pages
ISBN: 9780819456960

Table of Contents
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Optoelectronic devices for single photon generation
Author(s): A. J. Shields; A. J. Bennett; D. C. Unitt; M. B. Ward; O. Z. Karimov; P. Atkinson; P. See; D. G. Gevaux; Z. Yuan; R. M. Stevenson; D. A. Ritchie
Multiplexed quantum cryptography with single InP quantum dots
Author(s): Thomas Aichele; Valery Zwiller; Matthias Scholz; Gael Reinaudi; Jonas Persson; Oliver Benson
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Temperature dependent output characteristics of p-doped 1.1 and 1.3 µm quantum dot lasers
Author(s): Z. Mi; S. Fathpour; P. Bhattacharya; A. R. Kovsh; S. S. Mikhrin; I. L. Krestnikov; A. V. Kozhukhov; N. N. Ledentsov
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Gain compression coefficient and above-threshold linewidth enhancement factor in InAs/GaAs quantum DFB lasers
Author(s): H. Su; L. Zhang; A. L. Gray; R. Wang; P. M. Varangis; L. F. Lester
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Magnetic field effects on semiconductor laser characteristics
Author(s): Y. Seto; T. Miyamoto; T. Sato; M. Ohkawa; T. Maruyama
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Loss effect on 2D photonic crystal band structure
Author(s): Zeqin Zhu; Yaoming Mu; S. S. Pei
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Edge and surface-emitting tilted cavity lasers
Author(s): N. N. Ledentsov; V. A. Shchukin; A. R. Kovsh; S. S. Mikhrin; I. L. Krestnikov; A. V. Kozhukhov; N. Yu. Gordeev; L. Ya. Karachinsky; M. V. Maximov; I. I. Novikov; Yu. M. Shernyakov
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High-power single-transverse-mode holey VCSELs
Author(s): Akio Furukawa; Mitsunari Hoshi; Satoshi Sasaki; Atsushi Matsuzono; Kosuke Moritoh; Toshihiko Baba
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Multidimensional noise model and simulation of VCSEL devices
Author(s): Stefan Odermatt; Mathieu Luisier; Bernhard Schmithuesen; Matthias Streiff; Rainer Hovel; Bernd Witzigmann
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Spin-controlled LEDs and VCSELs
Author(s): Nils C. Gerhardt; Stephan Hoevel; Carsten Brenner; Martin R. Hofmann; Junling Yang; Dirk Reuter; Andreas D. Wieck
Influence of the relative bias current injection in the coupling of twin stripe diode lasers
Author(s): H. Lamela; R. Santos; G. Carpintero; P. Acedo; J. Pierre Vilcot
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Mode beating spectra from integrated twin ring diode lasers
Author(s): Chiyu Liu; Hongjun Cao; Marcita Benavidez; Hui Deng; Hai Ling; Gregory M. Peake; Gennady A. Smolyakov; Petr G. Eliseev; Marek Osinski
Polarization dynamics in semiconductor lasers with incoherent optical feedback
Author(s): David W. Sukow; Athanasios Gavrielides; Thomas Erneux; Michael J. Baracco; Zachary A. Parmenter; Karen L. Blackburn
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Above threshold modeling of single-spatial-mode edge-emitting diode lasers
Author(s): A. P. Napartovich; N. N. Elkin; A. G. Sukharev; V. N. Troshchieva; D. V. Vysotsky; M. Nesnidal; E. Stiers; Luke J. Mawst; Dan Botez
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Optimization of epitaxial layer design for high brightness tapered lasers
Author(s): J. M. G. Tijero; D. Rodriguez; L. Borruel; S. Sujecki; E. C. Larkins; I. Esquivias
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Gain lever characterization in monolithically integrated diode lasers
Author(s): Michael Pocha; Tiziana Bond; Rebecca Welty; Stephen Vernon; Jeffrey Kallman; Elaine Behymer
Growth and characterization of beta-Ga<sub>2</sub>O<sub>3</sub> single crystals as transparent conductive substrates for GaN
Author(s): Kiyoshi Shimamura; Encarnacion G. Villora; Kazuo Aoki; Noboru Ichinose
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Time evolution of piezoelectic field screening in InGaN quantum wells
Author(s): John D. Thomson; Iain H. Brown; Peter M. Smowton; Peter Blood; Weng W. Chow; A. Mark Fox; Santiago M. Olaizola Izquierdo
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Polarization field effects on optical gain and lasing characteristics of III-V nitride and arsenide quantum wells
Author(s): George Deligeorgis; Giorgos Dialynas; Zacharias Hatzopoulos; Nikolaos Pelekanos
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Growth and fabrication of AlGaInN-based UV-LEDs using SiN nano-mask technique
Author(s): Y. Naoi; H. Sato; H. Yamamoto; K. Ono; A. Nakamura; M. Kimura; S. Nouda; S. Sakai
Physics and simulation of group-III-nitride-based moth-eye LEDs
Author(s): M. Iwaya; H. Kasugai; T. Kawashima; K. Iida; A. Honshio; Y. Miyake; S. Kamiyama; H. Amano; I. Akasaki
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Device simulation and statistical analysis in industrial laser design
Author(s): Andreas Witzig; Bernd Witzigmann; Sathya Krishnamurthy; Gerhard Braun; Michael J. Pfeiffer; Wei-Choon Ng; Mark Johnson; Wolfgang Fichtner
A new approach for analysis of photonic crystal based on the spatial finite-difference and temporal differential formulation
Author(s): Jiazong Zhang; Velko P. Tzolov
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An improved modal gain model for semiconductor lasers
Author(s): Cheng Guan Lim; Stavros Iezekiel; Christopher M. Snowden
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Rubidium spectroscopy with 778- to 780-nm distributed feedback laser diodes
Author(s): Anselm Deninger; Sebastian Kraft; Frank Lison; Claus Zimmermann
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Modeling of injection-induced conductivity effects in light-emitting and laser diodes
Author(s): P. G. Eliseev
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Simulation of high performance quantum well GaN-based LED
Author(s): Z. Hassan; N. Zainal; M. R. Hashim; H. Abu Hassan
Theoretical characteristics of waveguide optical polarization splitters using dielectric periodic multilayer
Author(s): Kazutaka Baba; Yoshiaki Sone; Mitsunobu Miyagi
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Advances in quantum dot lasers for high-speed and temperature-stable operation
Author(s): Yasuhiko Arakawa; Mitsuru Sugawara
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Type I mid-infrared MQW lasers using AlInAsSb barriers and InAsSb wells
Author(s): Leslie G. Vaughn; L. Ralph Dawson; Edwin A. Pease; Luke F. Lester; Huifang Xu; Yingbing Jiang; Alan L. Gray
A novel light-emitting structure for the 3- to 5-µm spectral range
Author(s): J. W. Tomm; F. Weik; R. Glatthaar; U. Vetter; J. Nurnus; A. Lambrecht; B. Spellenberg; M. Bassler; M. Behringer; J. Luft
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