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PROCEEDINGS VOLUME 5567

24th Annual BACUS Symposium on Photomask Technology
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Volume Details

Volume Number: 5567
Date Published: 6 December 2004
Softcover: 148 papers (1492) pages
ISBN: 9780819455130

Table of Contents
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Mask industry assessment: 2004
Author(s): Gilbert V. Shelden; Scott D. Hector
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EUV mask pilot line at Intel Corporation
Author(s): Alan R. Stivers; Pei-Yang Yan; Guojing Zhang; Ted Liang; Emily Y. Shu; Edita Tejnil; Barry Lieberman; Rajesh Nagpal; Kangmin Hsia; Michael Penn; Fu-Chang Lo
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Phase defect printability and mask inspection capability of 65-nm technology node Alt-PSM for ArF lithography (Photomask Japan Best Paper)
Author(s): Shinji Akima; Tooru Komizo; Saburo Kawakita; Yutaka Kodera; Tsuyoshi Narita; Kiichi Ishikawa
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Aerial-image-based inspection on subresolution scattering bars
Author(s): Luke T.H. Hsu; C. C. Lin; Anja Rosenbusch; Yuval Bloomberg; Simon Kurin
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DIVAS: fully automated simulation based mask defect dispositioning and defect management system
Author(s): Saghir Munir; Daniel J. Bald; Vikram Tolani; Firoz Ghadiali; Barry Lieberman
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Chromeless phase lithography reticle defect inspection challenges and solutions
Author(s): Larry S. Zurbrick; Anthony Vacca; Byran Reese; Douglas Van Den Broeke; Stephen Hsu; Darren Taylor; Bryan Kasprowicz
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Mask defect inspection study with high-speed mask inspection system
Author(s): Jeayoung Jun; Hyunchul Kim; Sungjin Choi; Yong Kyoo Choi; Oscar Han
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Wavelength-dependent spot defects on advanced embedded attenuated phase-shift masks
Author(s): Christopher K. Magg; Jason M. Benz; Louis Kindt; Adam C. Smith; Jay Burnham; Jeffrey Riendeau; Christy Johnson; Rick Kontra
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Comprehensive defect detection featuring die-to-database reflected light inspection
Author(s): Anthony Vacca; Darren Taylor
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A reticle quality management strategy in wafer fabs addressing progressive mask defect growth problem at low-k1 lithography
Author(s): Kaustuve Bhattacharyya; Kong Son; Benjamin George Eynon; Dadi Gudmundsson; Carmen Jaehnert; Doris Uhlig
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MEEF-based mask inspection
Author(s): Wilhelm Maurer; James Word; Steffen F. Schulze; Shumay Dou Shang
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Performance optimization for gridded-layout standard cells
Author(s): Jun Wang; Alfred K. K. Wong; Edmund Yin-Mun Lam
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Integrating RET and mask manufacturability in designs for local interconnect for sub-100-nm trenches
Author(s): Nishrin Kachwala; Travis E. Brist; Rick S. Farnbach
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Accelerating yield ramp through design and manufacturing collaboration
Author(s): Robin C. Sarma; Huixiong Dai; Michael C. Smayling; Michael P. Duane
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Design, mask, and manufacturability
Author(s): Mark Ma; Hyesook Hong; Yong Seok Choi; Chi-Chien Ho; Mark Mason; Randy McKee
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Chrome dry etching for 65-nm node mask manufacturing
Author(s): Thomas Faure; Emily Fisch; Cuc Huynh; Shaun Crawford
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Reduction of radial CD errors and Cr loading effects in 90-nm binary NCAR mask process through chrome etch DOE
Author(s): Jian Ma; Chaoyang Li; Larry Bassist; Matthew Pekney; Nathan Wilcox; Jeff Farnsworth; Edward Lauder; B. Krishnakumar
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Quartz etch process to improve etch depth linearity and uniformity using Mask Etcher IV
Author(s): Sunil Srinivasan; Jason Plumhoff; Russ Westerman; Dave J. Johnson; Chris Constantine
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Software to simulate dry etch in photomask fabrication
Author(s): Sergey Babin; Konstantin Bay; Sergey Okulovsky
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Evaluation of a new-generation photomask develop system for CAR
Author(s): Rusty Cantrell; Martin Tschinkl; Axel Feicke; Wolfram Porsche; Gaston Lee; Tatsuhito Kotoda; Peter Tichy; Takahiro Fukai; Shigenori Kamei; Hiroshi Asai
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Patterning performance of most recent e-beam-sensitive CARs for advanced mask making: an update
Author(s): Anatol Schwersenz; Joerg Butschke; Axel Feicke; Mathias Irmscher; Peter Voehringer
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Quantitative analysis of develop loading effect and its application
Author(s): Hak-Seung Han; Se-Gun Moon; Je-Bum Yoon; Byung-Gook Kim; Seong-Yong Moon; Seong-Woon Choi; Woo-Sung Han
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High flow rate development: process optimization using megasonic immersion development (MID)
Author(s): Daniel Courboin; Jong Woo Choi; Sang Hyun Jung; Seung Hee Baek; Lee Ju Kim
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FEP-171 resist thickness optimization and dry etch screening on NTAR7 chrome substrates for Sigma7300 DUV laser pattern generator
Author(s): Johan O. Karlsson; Kezhao Xing; Adisa Bajramovic; Henrik Dahlberg; Charles Bjornberg; Peter Hogfeldt; Lars Kjellberg; Hans Fosshaug; Anna Dahlberg; Axel Lundvall
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Calibrating grayscale direct write bimetallic photomasks to create 3D photoresist structures
Author(s): Yuqiang Tu; Glenn H. Chapman; James Dykes; David Poon; Chinheng Choo; Jun Peng
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R-mask: a new concept and its application for small-volume production
Author(s): Katsuya Hayano; Shoji Hotta; Norio Hasegawa; Kunihiro Hosono; Toshihiko Tanaka; Kazuyuki Suko; Shiho Sasaki; Hiroshi Mohri; Morihisa Hoga; Naoya Hayashi
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Can we afford to replace chrome?
Author(s): Gilbert V. Shelden; Long He; Scott D. Hector; Walt Trybula
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Next-generation DUV ALTA mask patterning capabilities
Author(s): Paul C. Allen; Michael J. Bohan; Eric R. Christenson; H. Christopher Hamaker; Sam C. Howells; Boaz Kenan; Peter Pirogovsky; Malik K. Sadiq; Robin L. Teitzel; Michael C. White; Michael Ungureit; Alan Wickstrom; Robert Kiefer; Curt Jackson
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Conformal mapping in microlithography
Author(s): Asher Klatchko; Peter Pirogovsky
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Writing strategy and electron-beam system with an arbitrarily shaped beam
Author(s): Sergey Babin
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PMJ (Photomask Japan) 2004 panel overview: Issues on mask technology for 65-nm lithography with ArF
Author(s): Hisashi Watanabe; Hidehiro Watanabe
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A multi-objective floorplanner for shuttle mask optimization
Author(s): Gang Xu; Ruiqi Tian; David Z. Pan; Martin D.F. Wong
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Multilayer and multiproduct masks: cost reduction methodology
Author(s): Artur P. Balasinski
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Yield- and cost-driven fracturing for variable shaped-beam mask writing
Author(s): Andrew B. Kahng; Xu Xu; Alex Zelikovsky
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Predicting computer resource usage
Author(s): Alfred J. Reich; Chi-Min Yuan; Robert E. Boone
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Full-chip manufacturing reliability check and correction (MRC2): a first step toward design for manufacturability with low k1 lithography
Author(s): Michael Hsu; Tom Laidig; Kurt E. Wampler; Stephen Hsu; Xuelong Shi; J. Fung Chen; Douglas Van Den Broeke
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Distributed processing in integrated data preparation flow
Author(s): Steffen F. Schulze; George E. Bailey
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Phase-defocus windows for alternating phase-shifting mask
Author(s): Fu-Jye Liang; Chun-Kuang Chen; Jaw-Jung Shin; Jan-Wen You; Chun-Heng Lin; Zhin-Yu Pan; King-Chang Shu; Tsai-Sheng Gau; Burn J. Lin
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The impact of mask topography on binary reticles at the 65-nm node
Author(s): Mark D. Smith; Jeffrey D. Byers; Chris A. Mack
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Model-assisted complementary double exposure with source optimization
Author(s): J. Andres Torres; Yuri Granik
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Resist model calibration using 2D developed patterns for low-k1 process optimization and wafer printing predictions
Author(s): Ting Chen; Douglas Van Den Broeke; Sean Park; Armin Liebchen; J. Fung Chen; Stephen Hsu; Jung Chul Park; Linda Yu; Keith Gronlund
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Characterizing the demons in high-NA phase-shifting masks
Author(s): Garth C. Robins; Andrew R. Neureuther
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E-beam mask repair: fundamental capability and applications
Author(s): Ted Liang; Eric Frendberg; Daniel J. Bald; Michael Penn; Alan R. Stivers
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Gas flow modeling for focused ion beam (FIB) repair processes
Author(s): Mohamed S. El-Morsi; Alexander C. Wei; Gregory F. Nellis; Roxann L. Engelstad; Sybren Sijbrandij; Diane Stewart; Hans Mulders
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AAPSM repair utilizing transparent etch stop layer
Author(s): Darren Taylor; Michael Cangemi; Matthew Lassiter; Marc Cangemi; Eric Poortinga
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Focused ion beam repair of binary chrome defects for the 65-nm node
Author(s): David C. Ferranti; Jeffrey G. Marshman; Roth W. Lanphear; Kenneth G. Donahue; Stephen A. Bachman; Sharon M. Szelag
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ArF lithography reticle crystal growth contributing factors
Author(s): Florence Eschbach; Daniel Selassie; Peter Sanchez; Daniel Tanzil; Vikram Tolani; Mahmood Toofan; Huiying Liu; Barbara Greenebaum; Michael Murray; Raul Villacorta
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Advanced photomask cleaning
Author(s): Pat Marmillion; Walt Trybula; Brian J. Grenon
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Pellicle choice for 193-nm immersion lithography photomasks
Author(s): Eric P. Cotte; Ruediger Haessler; Benno Utess; Gunter Antesberger; Frank Kromer; Silvio Teuber
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Effect of UV/O3 treatment on mask surface to reducing sulfuric residue ions
Author(s): Dong Wook Lee; Ho Yong Jung; Mun Sik Kim; Jun Sik Lee; Yong Kyoo Choi; Oscar Han
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Phase-shifting optical maskless lithography enabling ASICs at the 65- and 45-nm nodes
Author(s): Tor Sandstrom; Ulric B. Ljungblad
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Maskless lithography with the solid immersion lens nanoprobes
Author(s): Tom Milster; Tao Chen; Dongseok Nam; Tuviah Ed Schlesinger
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Rasterizing for SLM-based mask making and maskless lithography
Author(s): Hans Martinsson; Tor Sandstrom
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E-beam lithography experimental results and simulation for the 45-nm node
Author(s): John Nistler; Chia-Jen Chen; Sergey Vychub; Hsin-Chang Lee; Lee-Chih Yeh; Hung-Chang Hsieh; Christoph Sambale; Ulrich Hofmann
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Development of a complementary phase-shift mask process for 90-nm node technology
Author(s): Ruoping Wang; Cece Philbin; Chong-Cheng Fu; Bill Wilkinson
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Printability of topography in alternating aperture phase-shift masks
Author(s): Vicky Philipsen; Rik Jonckheere
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Cost-effective overlay and CD metrology on phase-shifting masks
Author(s): Martin McCallum; Stewart Smith; Andrew Hourd; Anthony J. Walton; J. Tom M. Stevenson
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OPC model calibration for CPL patterning at extreme low k1
Author(s): Xuelong Shi; Tom Laidig; J. Fung Chen; Douglas Van Den Broeke; Stephen Hsu; Michael Hsu; Kurt E. Wampler; Uwe Hollerbach; Jung Chul Park; Linda Yu
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Qualifying OPC model robustness to reticle noise errors and FAB process changes
Author(s): Diane M. Keil; Nadya Belova; John V. Jensen; Neal P. Callan
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Process window modeling using compact models
Author(s): J. Andres Torres; Thomas Roessler; Yuri Granik
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Simple method for restricting OPC model minimum spacing and width for a no-failure imaging solution
Author(s): Nadya Belova; Neal P. Callan
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New solutions for inspection contrast tuning, enhanced chemical durability, and a new ultrahigh-transmission PSM
Author(s): Hans Willy Becker; Pascal Schley; Frank Schmidt; Frank Sobel; Markus Renno; Nathalie Olschewski; Holger Seitz; Ute Buttgereit; Konrad Knapp; Guenter Hess
Show Abstract
Mask topography effect in chromeless phase lithography
Author(s): Vicky Philipsen; Joost Bekaert; Geert Vandenberghe; Rik Jonckheere; Douglas Van Den Broeke; Robert Socha
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Contact and via hole mask design optimization for 65-nm technology node
Author(s): Douglas Van Den Broeke; Xuelong Shi; Robert Socha; Tom Laidig; Uwe Hollerbach; Kurt E. Wampler; Stephen Hsu; J. Fung Chen; Noel P. Corcoran; Mircea V. Dusa; Jung Chul Park
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Full-chip-model-based correction of flare-induced linewidth variation
Author(s): James Word; Jerome Belledent; Yorick Trouiller; Wilhelm Maurer; Yuri Granik; Emile Sahouria; Olivier Toublan
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Double dipole lithography for 65-nm node and beyond: defect sensitivity characterization and reticle inspection
Author(s): Stephen Hsu; Tsann-bin Chu; Douglas Van Den Broeke; J. Fung Chen; Michael Hsu; Noel P. Corcoran; William Volk; Wayne E. Ruch; Jean-Paul E. Sier; Carl E. Hess; Benjamin Szu-Min Lin; Chun-Chi Yu; George Huang
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Single-exposure general vortex phase-shift mask for contact hole
Author(s): Yong Liu; Dun Liu; James Hu
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Applications using 2D contact CDSEM images
Author(s): Chris A. Haidinyak; Cyrus Emil Tabery
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Fast simulation methods for defective EUV mask blank inspection
Author(s): Michael C. Lam; Andrew R. Neureuther
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Numerical and experimental study of oxide growth on EUV mask capping layers
Author(s): Eric P. Cotte; Christian Holfeld; Uwe Dersch; Guenther Ruhl; Jan Perlich
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Comparative study of mask architectures for EUV lithography
Author(s): Adam Richard Pawloski; Bruno La Fontaine; Harry J. Levinson; Stefan Hirscher; Siegfried Schwarzl; Klaus Lowack; Frank-Michael Kamm; Markus Bender; Wolf-Dieter Domke; Christian Holfeld; Uwe Dersch; Patrick Naulleau; Florian Letzkus; Joerg Butschke
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EUVL mask patterning with blanks from commercial suppliers
Author(s): Pei-Yang Yan; Guojing Zhang; Rajesh Nagpal; Emily Y. Shu; Chaoyang Li; Ping Qu; Frederick T. Chen
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Absorber stack optimization toward EUV lithography mask blank pilot production
Author(s): Frank Sobel; Lutz Aschke; Markus Renno; Holger Seitz; Hans Willy Becker; Nathalie Olschewski; Torsten Reichardt; Guenter Hess; Ute Buttgereit; Konrad Knapp; Florian Letzkus; Joerg Butschke; Corinna Koepernik
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Actinic detection and signal characterization of multilayer defects on EUV mask blanks
Author(s): Yoshihiro Tezuka; Masaaki Ito; Tsuneo Terasawa; Toshihisa Tomie
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Overcoming substrate defect decoration effects in EUVL mask blank development
Author(s): Patrick A. Kearney; Rajul V. Randive; Andy Ma; David Krick; Al Weaver; Ira Reiss; Daniel Abraham; Paul B. Mirkarimi; E. Spiller
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Optical inspection of NGL masks
Author(s): Donald W. Pettibone; Stanley E. Stokowski
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Characterization of defect detection sensitivity in inspection of mask substrates and blanks for extreme-ultraviolet lithography
Author(s): Edita Tejnil; Eric M. Gullikson; Alan R. Stivers
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Modeling and experimental investigation of bubble entrainment for flow over topography during immersion lithography
Author(s): Holly B. Burnett; Alexander C. Wei; Mohamed S. El-Morsi; Timothy A. Shedd; Gregory F. Nellis; Benjamin T. Spike; Chris Van Peski; Andrew Grenville; Roxann L. Engelstad
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Analysis and control of template distortions in Step-and-Flash Imprint Lithography
Author(s): Scott D. Schuetter; Gerald A. Dicks; Gregory F. Nellis; Roxann L. Engelstad
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Inspection and repair issues for Step-and-Flash Imprint Lithography templates
Author(s): Kevin J. Nordquist; William J. Dauksher; David P. Mancini; Douglas J. Resnick; Harald F. Hess; Donald W. Pettibone; David Adler; Kirk Bertsche; Roy White; Jeffrey E. Csuy; David Lee
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1x stencil masks fabrication and their use in Low-Energy Electron-beam Proximity Lithography (LEEPL)
Author(s): Uwe F. W. Behringer
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Reticle CD-SEM for 65-nm technology node and beyond
Author(s): Gerhard W. B. Schlueter; Takayuki Nakamura; Jun Matsumoto; Masahiro Seyama; John M. Whittey
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Immersion mask inspection with hybrid-microscopic systems at 193 nm
Author(s): Robert Brunner; Alexander Menck; Reinhard Steiner; Gerd Buchda; Steffen Weissenberg; Uwe Horn; Axel M. Zibold
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High-resolution actinic imaging and phase metrology of 193-nm CPL reticles
Author(s): Andrew J. Merriam; James J. Jacob; Douglas Van Den Broeke; Stephen Hsu; J. Fung Chen; Bryan Kasprowicz
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3D metrology solution for the 65-nm node
Author(s): Rick Kneedler; Sergey Borodyansky; Dimitri Klyachko; Leonid A. Vasilyev; Alex H. Buxbaum; Troy B. Morrison
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A proposal for an MCC (Multi-column cell with lotus root lens) system to be used as a mask-making e-beam tool
Author(s): Hiroshi Yasuda; Takeshi Haraguchi; Akio Yamada
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Advanced DUV laser writing tool for subwavelength technology BEOL layers
Author(s): Chiau Yen Lau; Qun Ying Lin; Liang Choo Hsia
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Advanced CD control technologies for EB mask writer
Author(s): Hajime Kawano; Yasuhiro Kadowaki; Kazui Mizuno; Hiroyuki Ito
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Global image placement of LEEPL mask
Author(s): Hideyuki Eguchi; Takashi Susa; Tomoya Sumida; Toshiaki Kurosu; Takashi Yoshii; Kenta Yotsui; Hiroshi Sugimura; Kojiro Itoh; Akira Tamura
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Mask defect reduction through automated pellicle mounting
Author(s): Richard E. Wistrom; Dennis Hayden; Timothy Neary
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R-mask: simple and low-cost fabrication techniques
Author(s): Akiko Fujii; Shiho Sasaki; Mochihiro Shimizu; Yukie Kobayashi; Takashi Tominaga; Morihisa Hoga; Hiroshi Mohri; Naoya Hayashi; Katsuya Hayano; Norio Hasegawa; Kunihiro Hosono; Tadashi Arai
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New structure of ArF high-transmittance attenuated phase-shifting mask with dry etching process
Author(s): Hiroyuki Iso; Noriyuki Harashima; Tatsuya Isozaki; Shuichiro Kanai; Takaei Sasaki
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Device analysis: a way to reduce patterning cost at mask and wafer level?
Author(s): Artur P. Balasinski; Frank A.J.M. Driessen
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Performance of novel 198.5-nm wavelength mask inspection system for 65-nm node and beyond optical lithography era
Author(s): Dong-Hoon Chung; Katsumi Ohira; Nobuyuki Yoshioka; Kenichi Matsumura; Toru Tojo; Masao Otaki
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Image-based metrology software for analysis of features on masks and wafers
Author(s): Saghir Munir; Daniel J. Bald; Vikram Tolani; Horst Haussecker
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Advanced mask inspection optical system (AMOS) using 198.5-nm wavelength for 65-nm (hp) node and beyond: system development and initial state D/D inspection performance
Author(s): Toru Tojo; Ryoich Hirano; Hideo Tsuchiya; Junji Oaki; Takeshi Nishizaka; Yasushi Sanada; Kazuto Matsuki; Ikunao Isomura; Riki Ogawa; Noboru Kobayashi; Kazuhiro Nakashima; Shinji Sugihara; Hiromu Inoue; Shinichi Imai; Hitoshi Suzuki; Akihiko Sekine; Makoto Taya; Akemi Miwa; Nobuyuki Yoshioka; Katsumi Ohira; Dong-Hoon Chung; Masao Otaki
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Sophisticated yield analysis through novel data clustering and visualization
Author(s): Michael L. Jacobson; Jian Ma; Richard P. Rodrigues; Robert L. O'Donnell
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Evaluation of printability of crystal growth defects in a 193nm lithography environment using AIMS
Author(s): Rainer Schmid; Axel M. Zibold; Kaustuve Bhattacharyya; Xuemei Chen; Brian J. Grenon
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A benchmark investigation on cleaning photomasks using wafer cleaning technologies
Author(s): Louis Kindt; Jay Burnham; Pat Marmillion
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Calibration of the registration metrology systems
Author(s): Mahesh Chandramouli; Yulia O. Korobko
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Mask manufacturing mix-and-match in front-end wafer processing
Author(s): Andreas Frangen; Roland Jakob; Michael Kubis
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Closing the defect printability loop: optimizing defect specifications for an established lithographic process
Author(s): Kyle Patterson; Clare Wakefield; Pierre Sixt; Frank Sundermann; Yorick Trouiller; Jerome Belledent; Christophe Couderc; Yves Rody; Kevin Lucas
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Aerial image measuring system at 193 nm: a tool-to-tool comparison and global CD mapping
Author(s): Axel M. Zibold; Rainer Schmid; Klaus Boehm; Robert Birkner
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Printability evaluation for 800-nm contact hole with repaired patterns according to exposing condition
Author(s): Sang Pyo Kim; Sang Chul Kim; Hee Chun Kim; Sang Lee Lee; Yong Kyoo Choi; Oscar Han
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Development of a 5-kHz solid state 193-nm actinic light source for photomask metrology and review
Author(s): James J. Jacob; Andrew J. Merriam
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CD-measurement technique for hole patterns on stencil mask
Author(s): Mikio Ishikawa; Satoshi Yusa; Tadahiko Takikawa; Hiroshi Fujita; Hisatake Sano; Morihisa Hoga; Naoya Hayashi
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Advanced photomask repair technology for 65-nm lithography: II
Author(s): Yasutoshi Itou; Yoshiyuki Tanaka; Nobuyuki Yoshioka; Yasuhiko Sugiyama; Ryoji Hagiwara; Haruo Takahashi; Osamu Takaoka; Tomokazu Kozakai; Osamu Matsuda; Katsumi Suzuki; Mamoru Okabe; Syuichi Kikuchi; Atsushi Uemoto; Anto Yasaka; Tatsuya Adachi; Naoki Nishida; Toshiya Ozawa
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Development of defect inspection and repair systems for EPL mask infrastructure
Author(s): Jiro Yamamoto; Nobuyuki Iriki; Hiroshi Arimoto
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Reduce process bias of photomask manufacturing for next-generation lithography
Author(s): Booky Lee; Sharon Wang; Toroy Tian; Samuel Yang; Roy Chen
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Maintaining lithographic quality during OPC for low k1 and MEEF processes constrained by mask dimensional rules
Author(s): Christopher M. Cork; Lawrence S. Melvin; Michael Miller; Robert M. Lugg; Michael L. Rieger
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Resolution enhancement technique optimization using model-based full-chip verification methodology for subwavelength lithography
Author(s): Juhwan Kim; Minghui Fan; Lantian Wang; Timothy Tsuei; Zongwu Tang
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IP protection of mask data by rebuilding the design hierarchy using OASIS format
Author(s): Kokoro Kato; Kuninori Nishizawa; Tadao Inoue; Anto Yasaka
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Enhancement of unified mask data formats for EB writers
Author(s): Toshio Suzuki; Junji Hirumi; Nobuyuki Yoshioka; Yutaka Hojyo; Yuichi Kawase; Shinji Sakamoto; Koki Kuriyama; Syogo Narukawa; Morihisa Houga
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First photomask developer based on state of the art wafer processing technology
Author(s): Peter Tichy; Takahiro Fukai; Shigenori Kamei; Hiroshi Asai; Tatsuhito Kotoda; Kazuhiro Takeshita; Tetsushi Miyamoto; Yoshiki Okamoto; Hideo Funakoshi; Shinji Koga; Shigemi Oono; Rusty Cantrell; Axel Feicke; Wolfram Porsche; Martin Tschinkl; Gaston Lee
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Simulating the effects of bake process parameters on resist thermal reflow
Author(s): Jae-Won Lee; Zhaohua Feng; Roxann L. Engelstad; Edward G. Lovell
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Advanced edge resist remover for photomask
Author(s): Shinji Kobayashi; Norihisa Koga; Yasuo Mori; Masatoshi Kaneda
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Chemical characteristics of negative-tone chemically amplified resist for advanced mask making: II
Author(s): Kazumasa Takeshi; Masahito Tanabe; Daisuke Inokuchi; Yuichi Fukushima; Yasuhiro Okumoto; Yoshimitsu Okuda
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Characterization of 193-nm resists for optical mask manufacturing
Author(s): Hans Fosshaug; Adisa Paulsson; Uldis Berzinsh; Helena Magnusson
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Practical LEEPL masks for sub-65-nm node
Author(s): Kenta Yotsui; Tomoya Sumida; Yoshiyuki Negishi; Takashi Yoshii; Kojiro Itoh; Akira Tamura
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Simulating the process flow of the Nikon EPL new geometry mask
Author(s): Jaehyuk Chang; Roxann L. Engelstad; Edward G. Lovell; Michael R. Sogard
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Proposal of using EUVL for PXL
Author(s): Kiwamu Takehisa
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Flexible MRC rules for OPC
Author(s): Nicolas B. Cobb; Eugene Miloslavsky; George Lippincott
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Enhanced model-based OPC for 65 nm and below
Author(s): James Word; Nicolas B. Cobb
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Evaluation of overlay accuracy of phase-shift image for 65-nm node masks
Author(s): Tadashi Komagata; Norio Kimura; Kaoru Funaki; Yasutoshi Nakagawa; Nobuo Gotoh
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LER characterization and impact on 0.13-μm lithography for OPC modeling
Author(s): Peter Nikolsky; Rama Tweg; Enna Altshuler; Eitan N. Shauly
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Placing assist features in layout using a process model
Author(s): Lawrence S. Melvin; James P. Shiely; Michael L. Rieger
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Defect inspection and repair performance on CPL masks for 90 and 65nm node line patterns
Author(s): Yasutaka Morikawa; Kouichirou Kojima; Hiroyuki Hashimoto; Yuuichi Yoshida; Shiho Sasaki; Hiroshi Mohri; Naoya Hayashi
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Formation and verification of a 90-nm contact lumped model
Author(s): Chi-Yuan Hung; Bin Zhang; Yong Done Wang
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Novel contact hole reticle design for enhanced lithography process window in IC manufacturing
Author(s): Chung-Hsing Chang
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Sensitivity of the 65-nm poly line printability to sPSM manufacturing errors
Author(s): Nadya Belova; John V. Jensen; Ebo H. Croffie; Neal P. Callan
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Analysis of in-field uniformity on wafer considering exposure margin and MEEF
Author(s): Byung-Cheol Cha; Seong-Yoon Kim; Soon-Ho Kim; Sang-Yong Yu; Chan-Uk Jeon; Hee-Sun Yoon; Woo-Sung Han
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Evaluation of multilayer damage in EUVL mask fabrication process
Author(s): Yuusuke Tanaka; Iwao Nishiyama; Tsukasa Abe; Shiho Sasaki; Naoya Hayashi
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Updates on the coefficient of thermal expansion property and surface finish capability of CLEARCERAM®-Z series for EUVL photomask substrate application
Author(s): Kousuke Nakajima; Toshihide Nakajima
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The influence of an electrostatic pin chuck on EUV mask flatness
Author(s): Gerald A. Dicks; Andrew R. Mikkelson; Roxann L. Engelstad
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SiO2 buffer-etch processes with a TaN absorber for EUV mask fabrication
Author(s): Florian Letzkus; Joerg Butschke; Corinna Koepernik; Christian Holfeld; Josef Mathuni; Lutz Aschke; Frank Sobel
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A new absorbing stack for EUV masks
Author(s): Christelle Charpin Nicolle; Vincent Farys; Beatrice Biasse; Jean-Francois Damlencourt; Jean Yves Robic
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Defect printability and inspection of EUVL mask
Author(s): Bing Lu; James R. Wasson; Pawitter J.S. Mangat; Jonathan L. Cobb; Scott D. Hector; Donald W. Pettibone; Donna O'Connell
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Evaluation of dry etching and defect repair of EUVL mask absorber layer
Author(s): Tsukasa Abe; Masaharu Nishiguchi; Tsuyoshi Amano; Toshiaki Motonaga; Shiho Sasaki; Hiroshi Mohri; Naoya Hayashi; Yuusuke Tanaka; Iwao Nishiyama
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Development of new chrome blanks for 65-nm node and beyond
Author(s): Masahiro Hashimoto; Takeyuki Yamada; Minoru Sakamoto; Mutsumi Hara; Yasushi Ohkubo; Masao Ushida
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AIMS-fab SPEC for defect repair and better repair profile
Author(s): Colbert Lu; William Y. Chou; Andy Cheng; J. K. Wu
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Phase standard based on profilometer metrology standard
Author(s): Gregory P. Hughes; Cindy Goodman; Gunter Antesberger; Stefan Burges; Troy B. Morrison; Alex H. Buxbaum
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Applying advanced surface analysis techniques to small defect characterization on EUV ML blanks
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