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Proceedings of SPIE Volume 5376

Advances in Resist Technology and Processing XXI
Editor(s): John L. Sturtevant
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Volume Details

Volume Number: 5376
Date Published: 14 May 2004
Softcover: 141 papers (1360) pages
ISBN: 9780819452894

Table of Contents
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Photoresist outgassing: a potential Achilles heel for short-wavelength optical lithography?
Author(s): Roderick R. Kunz
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Is ArF the final wavelength?
Author(s): Willard E. Conley; Joseph J. Bendik
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Liquid immersion lithography: evaluation of resist issues
Author(s): William Hinsberg; Gregory M. Wallraff; Carl E. Larson; Blake W. Davis; Vaughn Deline; Simone Raoux; Dolores Miller; Frances A. Houle; John Hoffnagle; Martha I. Sanchez; Charles Rettner; Linda K. Sundberg; David R. Medeiros; Ralph R. Dammel; Willard E. Conley
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Implications of immersion lithography on 193-nm photoresists
Author(s): J. Christopher Taylor; Charles R. Chambers; Ryan Deschner; Robert J. LeSuer; Willard E. Conley; Sean D. Burns; C. Grant Willson
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Resist interaction in 193-/157-nm immersion lithography
Author(s): Shinji Kishimura; Masayuki Endo; Masaru Sasago
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Measurements of water distribution in thin lithographic films
Author(s): Bryan D. Vogt; Christopher L. Soles; Vivek M. Prabhu; Ronald L. Jones; Wen-Li Wu; Eric K. Lin; Dario L. Goldfarb; Marie Angelopoulos
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Quencher gradient resist process for low k process
Author(s): Jae Chang Jung; Sung Koo Lee; Won Wook Lee; Cheol Kyu Bok; Seung Chan Moon; Ki Soo Shin
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193-nm negative resist based on acid-catalyzed elimination of polar molecules
Author(s): Ratnam Sooriyakumaran; Blake W. Davis; Carl E. Larson; Phillip J. Brock; Richard A. DiPietro; Thomas I. Wallow; Eric F. Connor; Linda K. Sundberg; Gregory Breyta; Robert D. Allen; Kaushal S. Patel; Pushkara Rao Varanasi
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Why do weak acids not work in 193-nm photoresists?: matrix effects on acid-catalyzed deprotection
Author(s): Gerd Pohlers; George G. Barclay; Azher Razvi; Carolyne Stafford; Anthony Barbieri; James F. Cameron
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IBM-JSR 193-nm negative tone resist: polymer design, material properties, and lithographic performance
Author(s): Kaushal S. Patel; Margaret C. Lawson; Pushkara Rao Varanasi; David R. Medeiros; Gregory M. Wallraff; Phillip J. Brock; Richard A. DiPietro; Yukio Nishimura; Takashi Chiba; Mark Slezak
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Novel nonionic photoacid generator releasing strong acid for chemically amplified resists
Author(s): Hitoshi Yamato; Toshikage Asakura; Tobias Hintermann; Masaki Ohwa
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High-performance 193nm photoresist materials based on ROMA polymers: sub-90nm contact hole application with resist reflow
Author(s): Hyun Sang Joo; Dong Chul Seo; Chang Min Kim; Young Taek Lim; Seong Duk Cho; Jong Bum Lee; Ji Young Song; Kyoung Mun Kim; Joo Hyeon Park; Jae Chang Jung; Ki Soo Shin; Cheol Kyu Bok; Seung Chan Moon
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Recent advances in fluorinated resists for application at 157 nm
Author(s): Francis M. Houlihan; Raj Sakamuri; Andrew Romano; David Rentkiewicz; Ralph R. Dammel; Willard E. Conley; Daniel A. Miller; Michael Sebald; Nickolay Stepanenko; Matthias Markert; Uta Mierau; Inge Vermeir; Christoph Hohle; Toshiro Itani; Masato Shigematsu; Etsurou Kawaguchi
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A new monocyclic fluropolymer structure for 157-nm photoresists
Author(s): Yoko Takebe; Masataka Eda; Shinji Okada; Osamu Yokokoji; Shigeo Irie; Akihiko Otoguro; Kiyoshi Fujii; Toshiro Itani
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Characterization of TFE/norbornene-based fluoropolymer resist for 157-nm lithography
Author(s): Takuya Hagiwara; Takamitsu Furukawa; Toshiro Itani; Kiyoshi Fujii; Takuji Ishikawa; Meiten Koh; Tetsuhiro Kodani; Tsukasa Moriya; Tsuneo Yamashita; Takayuki Araki; Minoru Toriumi; Hirokazu Aoyama
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The dissolution behavior of tetrafluoroethylene-based fluoropolymers for 157-nm resist materials
Author(s): Takuji Ishikawa; Tetsuhiro Kodani; Meiten Koh; Tsukasa Moriya; Takayuki Araki; Hirokazu Aoyama; Tsuneo Yamashita; Minoru Toriumi; Takuya Hagiwara; Takamitsu Furukawa; Toshiro Itani; Kiyoshi Fujii
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Outgassing characteristics of acetal resists for 157-nm lithography investigated by time-resolved measurement
Author(s): Yoshinori Matsui; Shu Seki; Shiro Matsui; Seiichi Tagawa; Shigeo Irie; Toshiro Itani
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157-nm single-layer resist based on novel monocyclic fluorinated polymer
Author(s): Akihiko Otoguro; Shigeo Irie; Toshiro Itani; Kiyoshi Fujii; Yoko Takebe; Yasuhide Kawaguchi; Osamu Yokokoji
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Overbake: sub-40nm gate patterning with ArF lithography and binary masks
Author(s): David Van Steenwinckel; Hans Kwinten; Sabrina Locorotondo; Stephan Beckx
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Evaluation of outgassing from a fluorinated resist for 157-nm lithography
Author(s): Shigeo Irie; Kiyoshi Fujii; Yasuo Itakura; Youichi Kawasa ; Keiji Egawa; Ikuo Uchino; Akira Sumitani; Toshiro Itani
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Optimization of resist shrink techniques for contact hole and metal trench ArF lithography at the 90-nm technology node
Author(s): Christine Wallace; Jochen Schacht; I Hsiung Huang; Ruei Hung Hsu
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157-nm resist assessment by a full-field scanner
Author(s): Akihiko Otoguro; Shigeo Irie; Toshiyuki Ishimaru; Toshifumi Suganaga; Toshiro Itani; Kiyoshi Fujii
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Comprehensive analysis of sources of total CD variation in ArF resist perspective
Author(s): Hyun-Woo Kim; Hyung-Rae Lee; Kyung-Mee Kim; Shi Yong Lee; Bong-Cheol Kim; Seok-Hwan Oh; Sang-Gyun Woo; Han-Ku Cho; Woo-Sung Han
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Novel reactions of quadricyclane: a new route to monomers for low-absorbing polymers in 157-nm photoresists
Author(s): John A. Marsella; Atteye H. Abdourazak; Richard V. C. Carr; Thomas J. Markley; Eric A. Robertson
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Effects of airborne molecular contamination on 157nm resists: AMC friend or foe?
Author(s): Jeff J. Meute; Georgia Rich; Karen Turnquest; Kim Dean; Shashikant Patel; Victoria L. Graffenberg; Michael P. Rodriguez
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Elimination of photoresist linewidth slimming by fluorination
Author(s): Cesar M. Garza; Willard E. Conley
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Surface and bulk chemistry of chemically amplified photoresists: segregation in thin films and environmental stability issues
Author(s): Erin L. Jablonski; Vivek M. Prabhu; Sharadha Sambasivan; Daniel A Fischer; Eric K. Lin; Dario L. Goldfarb; Marie Angelopoulos; Hiroshi Ito
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Investigation of shot-noise-induced line-edge roughness by continuous-model-based simulation
Author(s): Lei Yuan; Andrew R. Neureuther
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The lithographic impact of resist model parameters
Author(s): Mark D. Smith; Jeffrey D. Byers; Chris A. Mack
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Resolution limitations in chemically amplified photoresist systems
Author(s): Gerard M. Schmid; Michael D. Stewart; Chia-Ying Wang; Bryan D. Vogt; Vivek M. Prabhu; Eric K. Lin; C. Grant Willson
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Design of dissolution inhibitors for chemically amplified photolithographic systems
Author(s): Charles R. Chambers; Shiro Kusumoto; Brian P. Osborn; Alok Vasudev; Michitaka Ootani; Leonidas Walthal; Hale McMichael; Paul A. Zimmerman; Willard E. Conley; C. Grant Willson
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Effect of nanoscale confinement on the diffusion behavior of photoresist polymer thin films
Author(s): Lovejeet Singh; Peter J. Ludovice; Clifford L. Henderson
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Proximity correction and k1 performance for resists with nonoptical patterning response
Author(s): David S Fryer; Vivek K Singh; Thanh N Phung; Peng Liu
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A study on the dissolution inhibition of poly norbornene hexafluoroisopropanol in aqueous base solutions
Author(s): Medhat A. Toukhy; Joseph Oberlander; Dalil Rahman; Francis M. Houlihan
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Improved chemically amplified photoresist characterization using interdigitated electrode sensors: photoacid diffusivity measurements
Author(s): Cody M. Berger; Clifford L. Henderson
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Effect of background exposure dose upon line-edge roughness (LER)
Author(s): Mike V. Williamson; Andrew R. Neureuther
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Characterization of line-edge roughness in photoresist using an image fading technique
Author(s): Adam R. Pawloski; Alden Acheta; Ivan Lalovic; Bruno M. La Fontaine; Harry J. Levinson
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Effect of line-edge roughness (LER) and line-width roughness (LWR) on sub-100 nm device performance
Author(s): Ji-Young Lee; Jangho Shin; Hyun-Woo Kim; Sang-Gyun Woo; Han-Ku Cho; Woo-Sung Han; Joo-Tae Moon
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Patterning capabilities of EUV resists
Author(s): Wang Yueh; Heidi B. Cao; Manish Chandhok; Sang Lee; Michael Shumway; Jeff Bokor
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Fundamentals of developer-resist interactions for line-edge roughness and critical dimension control in model 248-nm and 157-nm photoresists
Author(s): Vivek M. Prabhu; Michael X. Wang; Erin L. Jablonski; Bryan D. Vogt; Eric K. Lin; Wen-Li Wu; Dario L. Goldfarb; Marie Angelopoulos; Hiroshi Ito
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Application of photosensitive BARC and KrF resist on implant layers
Author(s): D.C. Owe-Yang; Bang-ching Ho; Shinji Miyazaki; Tomohide Katayama; Kenji Susukida; Wenbing Kang; Yung-Cheng Chang
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Evaluation of wet-developable KrF organic BARC to improve CD uniformity for implant application
Author(s): Isabelle Danielle Guilmeau; Alice F. Guerrero; Vincent Blain; Stephanie Kremer; Vincent Vachellerie; Damien Lenoble; Patricia Nogueira; Sebastien Mougel; Jean-Damien Chapon
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Rinse additives for defect suppression in 193-nm and 248-nm lithogrophy
Author(s): Spyridon Skordas; Ryan L. Burns; Dario L. Goldfarb; Sean D. Burns; Marie Angelopoulos; Colin J. Brodsky; Margaret C. Lawson; Carole J. Pillette; Jeffrey J. Bright; Robert L. Isaacson; Mark E. Lagus; Vandana Vishnu
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Rapid supercritical drying techniques for advanced lithography
Author(s): Hideo Namatsu
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BIORESIST: a lithographic approach for the patterning of cells in tissue engineering applications
Author(s): Wei He; Kenneth E. Gonsalves; Craig R. Halberstadt; Yusif Umar; Jae-Hak Choi
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Novel resists with non-traditional compositions for EUV lithography
Author(s): Junyan Dai; Christopher K. Ober
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Photopatternable silicone compositions for electronic packaging applications
Author(s): Brian R Harkness; Geoff B Gardner; James S Alger; Michelle R Cummings; Jennifer Princing; Yeong Lee; Herman Meynen; Mario Gonzales; Bart Vandevelde; Mathieu Vanden Bulcke; Christophe Winters; Eric Beyne
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Fluoropolymers for 157-nm single-layer resists developed using a new etching rate estimation model (KI-Model)
Author(s): Yasuhide Kawaguchi; Takashi Sasaki; Jun Irisawa; Osamu Yokokoji; Shigeo Irie; Akihiko Otoguro; Toshiro Itani; Kiyoshi Fujii
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Contact shrinkage techniques for 157-nm lithography
Author(s): Mitsuharu Yamana; Masumi Hirano; Seiji Nagahara; Makoto Tominaga
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Evaluation of 157-nm resist structure: outgassing relationship using in situ QCM technique
Author(s): Masamitsu Shirai; Toyofumi Shinozuka; Shinichi Takashiba; Yusuke Horiguchi; Shigeo Irie; Toshiro Itani
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Synthesis of photoresists for 157-nm microlithography using CO2
Author(s): Mary Kate Boggiano; Joseph M. DeSimone
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Hexafluoroisopropyl and trifluoromethyl carbinols in an acrylate platform for 157-nm chemically amplified resists
Author(s): Vladimir Jakubek; Eric A. Robertson; Atteye H. Abdourazak; Thomas J. Markley; John A. Marsella; Christopher K. Ober
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Application of newly synthesized poly(hydroxystyrene-acrylate) copolymers to improve vacuum stability on E-beam resist for mask fabrication
Author(s): Dong-hwal Lee; Sang-jung Kim; Dong-uk Choi; Deogbae Kim; Jaehyun Kim; Chang-hwan Kim
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Impact of BARC on SEM shrinkage of ArF resist
Author(s): Shi Yong Lee; Myungsun Kim; Sangwoong Yoon; Kyung-Mee Kim; Jae Hyun Kim; Hyun-Woo Kim; Sang-Gyun Woo; Young Ho Kim; Sang-Mun Chon; Takahiro Kishioka; Yasuhisa Sone; Yasuyuki Nakajima
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Design and development of novel monomers and copolymers for 193-nm lithography
Author(s): Atsushi Otake; Emi Araya; Hikaru Momose; Ryuichi Ansai; Masayuki Tooyama; Tadayuki Fujiwara
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Investigation of the effect of resist components and process condition on photochemical efficiency of ArF photoresist
Author(s): Jung-Woo Kim; Eun-Kyung Son; Sang-Hyang Lee; Deogbae Kim; Jaehyun Kim; Geunsu Lee; Jae Chang Jung; Cheol Kyu Bok; Seung Chan Moon; Ki Soo Shin
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The synthesis and properties of N-hydroxy maleopimarimide sulfonate derivatives as PAG and inhibitor for deep-UV photoresist
Author(s): Liyuan Wang; Wenjun Wang; Xin Guo
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Water-developable resists based on glyceryl methacrylate for 193-nm lithography
Author(s): Jin-Baek Kim; Ji-Hyun Jang; Jae-Hak Choi; Kwan-Ku Lee; Jong-Sung Ko
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Wet-recess process optimization of a bottom antireflective coating for the via first dual damascene scheme
Author(s): Nickolas L. Brakensiek; Brian Kidd; Carlton A. Washburn; Earnest Murphy
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Developer-soluble gap fill materials for patterning metal trenches in via-first dual damascene process
Author(s): Mandar Bhave; Kevin Edwards; Carlton A. Washburn; Satoshi Takei; Yasushi Sakaida; Yasuyuki Nakajima
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Bottom anti-reflective coatings (BARCs) for 157-nm lithography
Author(s): Liu He; Rama Puligadda; Joyce Lowes; Michael D. Rich
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Wet developable bottom anti-reflective coatings
Author(s): Tadashi Hatanaka; Shigeo Kimura; Tomoyuki Enomoto; Yasuyuki Nakajima
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A planarization process for multi-layer lithography applications
Author(s): Wu-Sheng Shih; Charles J. Neef; Mark G. Daffron
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Integration using inorganic BARC in a via first dual-damascene process with low-k dielectric
Author(s): Jun Kyu Ahn; Seon Ho Choi; Young Keun Kim; Ki Yeop Park; Jae Sung Choi; Eun Suk Hong; Kang Sup Shin; Si Bum Kim; Kyeong Keun Choi; Sung Bo Hwang; Jeong Gun Lee
New BARC materials for the 65-nm node in 193-nm lithography
Author(s): Charles J. Neef; Vandana Krishnamurthy; Mariya I. Nagatkina; Evan Bryant; Michelle Windsor; Cheryl Nesbit
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Thin film and high-etch-rate type 248-nm bottom antireflective coatings
Author(s): Tomoyuki Enomoto; Satoshi Takei; Takahiro Kishioka; Tadashi Hatanaka; Rikimaru Sakamoto; Yasuyuki Nakajima
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Design and development of high etch rate organic bottom antireflective coating for sub-100 nm node and beyond
Author(s): Hengpeng Wu; Zhong Xiang; Aritaka Hishida; David Abdallah; Jianhui Shan; Eleazar Gonzalez; Shuji S. Ding; Mark Neisser
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Analysis of solvent effect to control the BARC coating uniformity
Author(s): Min-Ho Jung; Sangwoong Yoon; Eun-Soon Chung; Beom-Sang Yoo; Jeong Yun Ya; Don Winning; Boo Deuk Kim; Hong Lee; Do Young Kim; Young Hoon Kim; Myungsun Kim; Young Ho Kim; Sang-Mun Chon
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Via fill properties of organic BARCs in dual-damascene application
Author(s): Runhui Huang
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High etch rate ArF BARC composed of polyester
Author(s): Young Sun Hwang; Jae Chang Jung; Keun Do Ban; Sarohan Park; Cheol Kyu Bok; Seung Chan Moon; Ki Soo Shin
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Application of new thin BARC technology for KrF lithography at 80-nm node device
Author(s): Myoung-Soo Kim; Kew-Chan Shim; Hak-Joon Kim; Ki-Sung Kwon; Hong-Goo Lee; Chul-Seung Lee; Myung-Goon Gil; Yong-Wook Song
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Double pre-wet RRC (reducing resist consumption) process for deep ultraviolet bottom antireflective coatings (BARC)
Author(s): Xiao Li; Warren Greene; Chris Bowker
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Photosensitive co-polycarbonates for use as sacrificial materials in the fabrication of microfluidic and microelectromechanical devices
Author(s): Celesta E. White; Clifford L. Henderson
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Rinse additives for line-edge roughness control in 193-nm lithography
Author(s): Dario L. Goldfarb; Sean D. Burns; Ryan L. Burns; Colin J. Brodsky; Margaret C. Lawson; Marie Angelopoulos
Show Abstract
Silicon backbone polymers as EUV resists
Author(s): Juan Pablo Bravo-Vasquez; Young-Je Kwark; Christopher K. Ober; Heidi B. Cao; Hai Deng; Robert P. Meagley
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Characterization of outgassing for EUV technology
Author(s): Vani Thirumala; Heidi B. Cao; Wang Yueh; Hokkin Choi; Victoria Golovkina; John Wallace; Paul F. Nealey; Don Thielman; Franco Cerrina
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Mist deposition of thin photoresist films
Author(s): William J. Mahoney; Paul Roman; Paul Mumbauer; Jerzy Ruzyllo
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Material origins of line-edge roughness: Monte Carlo simulations and scaling analysis
Author(s): George P. Patsis; Vassilios Constantoudis; Evangelos Gogolides
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Explanation of LER using the concept of gel layer in chemically amplified photoresists
Author(s): Joon Yeon Cho; Se Jin Choi; Yong Jun Choi; Hong Lae Kim; Kee Ho Kim
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Influence of activation energy on LER in chemically amplified KrF photoresists
Author(s): Jae Hyun Kim; Chang Ho Lee; Seok Bong Park; Won Mi Kim; Sang Sik Moon; Kyung-Mee Kim; Shi Yong Lee; Sangwoong Yoon; Young Ho Kim; Sang-Mun Chon
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Surface conditioning solutions to reduce resist line roughness
Author(s): Peng Zhang; Manuel Jaramillo; Madhukar B. Rao; Colin Yates; Danielle M. King; Brenda F. Ross; Bridget L. O'Brien
Inorganic Bi/In thermal resist as a high-etch-ratio patterning layer for CF4/CHF3/O2 plasma etch
Author(s): Yuqiang Tu; Glenn H. Chapman; Jun Peng
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Surface conditioning solutions for pattern collapse reduction
Author(s): Peng Zhang; Manuel Jaramillo; Danielle M. King; Madhukar B. Rao; Bridget L. O'Brien; Brenda F. Ross
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Novel rinse process for reducing pattern collapse in 0.30-k1 ArF lithography
Author(s): Geunsu Lee; Young Sun Hwang; Keun Do Ban; Cheol Kyu Bok; Seung Chan Moon; Ki Soo Shin
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Effect of the rinse solution to avoid 193-nm resist line collapse: a study for modification of resist polymer and process conditions
Author(s): Seiya Masuda; Masakazu Kobayashi; Woo-Kyu Kim; Clement Anyadiegwu; Munirathna Padmanaban; Ralph R. Dammel; Keiichi Tanaka; Yoshiaki Yamada
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Improvement of pattern collapse issue by additive-added D.I water rinse process: II
Author(s): Osamu Miyahara; Keiichi Tanaka; Shinya Wakamizu; Junichi Kitano; Yoshiaki Yamada
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The use of surfactant in the rinse to improve collapse behavior of chemically amplified photoresists
Author(s): Ivan Junarsa; Mark P. Stoykovich; Kenji Yoshimoto; Paul F. Nealey
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Influence of writing strategy on CD control for the spatial light modulator-based Sigma7300 DUV laser pattern generator
Author(s): Hans Fosshaug; Per Askebjer; Johan Karlsson; Adisa Bajramovic; Kezhao Xing; Robert Eklund; Jonathan Walford; Mats Ekberg; Peter Hogfeldt; Thomas Öström
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Simulation of energy deposition for scattering electrons in resist layer
Author(s): Yousong Tao; Yulin Zhang; Dayao Li
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Nanopatterning on fragile or 3D surfaces with sterol based vapour deposited electron beam resist
Author(s): Ron R. Legario; Prasad S. Kelkar; Jacques Beauvais; Eric Lavallee; Dominique Drouin; Melanie Cloutier; David Turcotte; Pan Yang; Lau Kien Mun; Yousef Awad; Pierre J. Lafrance
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High-temperature negative resist tunable for new lift-off applications
Author(s): Medhat A. Toukhy; PingHung Lu; Kate Kao; Robert Plass; Ching-Hui Chen; Gerald L. Faerber
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Characterization of an ultra-thick positive photoresist for electroplating applications
Author(s): Brad K. Avrit; Edward W. Maxwell; Lisa M. Huynh; Elliott S. Capsuto
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Evaluation of resist-film property by scan and spin coating
Author(s): Hiroshi Shinya; Takayuki Ishii; Yukihiro Wakamoto; Shinichi Sugimoto; Takahiro Kitano
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Application of polysilazane to etch mask in pattern transfer processes for deep and vacuum UV lithography
Author(s): Yasuhiko Sato; Junko Abe; Tsuyoshi Shibata
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Dry developed resist schemes for focused ion beam lithography
Author(s): Khalil I. Arshak; Miroslav Mihov; Shohei Nakahara; Arous Arshak; Declan McDonagh; Bobby K. Hooghan; John Delucca
Understanding the role of base quenchers in photoresists
Author(s): Timothy B. Michaelson; Andrew T. Jamieson; Adam R. Pawloski; Jeffrey Byers; Alden Acheta; C. Grant Willson
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E-beam proximity effect parameters for sub-100nm features
Author(s): Keith R Mountfield; Andrew R. Eckert; XiaoMin Yang; Earl C. Johns
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Electron-beam assisted resist sidewall angle control and its applications
Author(s): Jei-Wei Chang; Chao-Peng Chen
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Effect of film thickness on the dissolution rate behavior of photoresist polymer thin films
Author(s): Lovejeet Singh; Peter J. Ludovice; Clifford L. Henderson
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Improved performance of Apex-E photoresist with the application of the electric field enhanced PEB
Author(s): Jacob Poppe; Andrew R. Neureuther
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Methodology and practical application of an ArF resist model calibration
Author(s): Ralf Ziebold; Bernd Kuchler; Christoph Nolscher; Martin Robiger; Klaus Elian; Bernd Tollkuhn
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Study of proximity lithography simulations using measurements of dissolution rate and calculation of the light intensity distributions in the photoresist
Author(s): Yoshihisa Sensu; Mariko Isono; Atsushi Sekiguchi; Mikio Kadoi; Toshiharu Matsuzawa
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Advances in resist pattern transfer process using 157-nm lithography
Author(s): Takamitsu Furukawa; Takuya Hagiwara; Etsurou Kawaguchi; Kentaro Matsunaga; Toshifumi Suganaga; Toshiro Itani; Kiyoshi Fujii
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Airborne contamination control for 157-nm lithography: influence of ammonia contamination
Author(s): Hidefumi Matsui; Junichi Kitano; Kosuke Yoshihara; Etsurou Kawaguchi; Takamitsu Furukawa; Kentaro Matsunaga; Toshiro Itani; Kiyoshi Fujii
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Acid diffusion characteristics of RELACS coating for 193nm lithography
Author(s): Sungeun Hong; Takeshi Nishibe; Tetsuo Okayasu; Kiyohisa Takahashi; Yusuke Takano; Wenbing Kang; Hatsuyuki Tanaka
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Realization of sub-80nm small space patterning in ArF photolithography
Author(s): Si-Hyun Kim; Hyung-Do Kim; Si-Hyeung Lee; Chang-Min Park; Man-Hyoung Ryoo; Gi-Sung Yeo; Jung-Hyeon Lee; Han-Ku Cho; Woo-Sung Han; Joo-Tae Moon
How to print 100 nm contact hole with low NA 193 nm lithography
Author(s): Shang-ho Lin; Jui-mei Teng; Jian-hong Chen; Chun-hua Chen; Bang-ching Ho
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Novel transparent PAGs for 193-nm resists
Author(s): Kunihiko Kodama; Kenichiro Sato; Shiro Tan; Fumiyuki Nishiyama; Tsukasa Yamanaka; Shinichi Kanna; Hyou Takahashi; Yasumasa Kawabe; Makoto Momota; Tadayoshi Kokubo
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Evaluation of puddle time effect and optimization of development process in 193nm lithography
Author(s): Hyung-Rae Lee; Jangho Shin; Hyun-Woo Kim; Sang-Gyun Woo; Han-Ku Cho; Woo-Sung Han
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Influence of backbone chemistry on the post-exposure bake temperature sensitivity of 193-nm photoresists
Author(s): Young C. Bae; Teruaki Ogawa; Robert J. Kavanagh; Tatum Kobayashi; Tracy Lindsay; Tsutomu Tanaka; Cheng Bai Xu; George Orsula; Jason DeSisto; Marie Hellion
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PEB sensitivity studies of ArF resists: II. Polymer and solvent effects
Author(s): Chi-Sun Hong; Sang-Ho Lee; Woo-Kyu Kim; Takanori Kudo; Allen Timko; Douglas Mckenzie; Clement Anyadiegwu; Dalil M. Rahman; Guanyang Lin; Ralph R. Dammel; Munirathna Padmanaban
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New materials for 193-nm trilayer imaging
Author(s): Jim D. Meador; Doug Holmes; Mariya I. Nagatkina; Rama Puligadda; Denise Gum; Randy Bennett; Sam X. Sun; Tomoyuki Enomoto
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Cost effective sub-100-nm DUV lithography strategy: SiBiL vs. hardmask
Author(s): Dan C. Baker; Kevin Clark; Scott Coleman; Brian Hesse; Carol Kwok; Robert Ma; John Setty; Karen Suhm; Vincent Tam
Microlens-induced pattern defect in DUV resist
Author(s): Shu-Fen Tsai; Chih-You Chen; Chih-Chuan Chang; Tai-Wei Huang; Hann-Yii Gao; Chin-Yu Ku
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Effect of PEB exhaust on resist CD for DUV process
Author(s): Shu-Fen Tsai; Yuh-Shyang Chiu; Chih-Horng Chien; Hann-Yii Gao; Chin-Yu Ku
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Combinitorial resist processing studies
Author(s): Carl E. Larson; Gregory M. Wallraff
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Optimized acid release underlayers for 157-nm lithography
Author(s): Carl E. Larson; Gregory M. Wallraff; L. Johnson; Phillip J. Brock; Linda K. Sundberg
Behavior of chemically amplified resist defects in TMAH solution: III
Author(s): Yuko Ono; Takeshi Shimoaoki; Ryoichiro Naito; Junichi Kitano
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Optimized filtration for reduced defectivity and improved dispense recipe in 193-nm BARC lithography
Author(s): Phong Do; Joe Pender; Thomas Lehmann; Leo P. Mc Ardle; Barry Gotlinsky; Michael Mesawich
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Mechanisms of defect generation in chemically amplified resist processes
Author(s): Takeshi Shimoaoki; Ryoichiro Naito; Junichi Kitano
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A novel wafer baking system using hot air streams
Author(s): Lan Wang; Siew Loong Chow; Ai Poh Loh; Zhi Ming Gong; Woei Wan Tan; Arthur E. B. Tay; Weng Khuen Ho
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Short develop time process with novel develop application system
Author(s): Masakazu Sanada; Osamu Tamada; Masahiko Harumoto
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Necessity of chemical edge bead removal in modern day lithographic processing
Author(s): Igor Jekauc; Michael Watt; Trip Hornsmith; Jason Tiffany
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Critical dimension control in 90nm - 65nm node
Author(s): Yuichi Terashita; Mamoko Shizukuishi; Hideo Shite; Hideharu Kyoda; Kazuhiko Oshima; Kosuke Yoshihara
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Effect of photoacid generator additives on the dissolution behavior of bis-trifluoromethyl carbinol substituted polynorbornene
Author(s): Trevor Hoskins; Cody M. Berger; Peter J. Ludovice; Clifford L. Henderson; Larry D. Seger; Chun Chang; Larry F. Rhodes
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Rapid stripping of thick negative-tone acrylic photoresists for semiconductor BEOL applications
Author(s): John C. Moore; Bruce J. Fender; Eric C. Huenger
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Using scanning electrochemical microscopy to probe chemistry at the solid-liquid interface in chemically amplified immersion lithography
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