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Proceedings of SPIE Volume 5375

Metrology, Inspection, and Process Control for Microlithography XVIII
Editor(s): Richard M. Silver
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Volume Details

Volume Number: 5375
Date Published: 24 May 2004
Softcover: 143 papers (1460) pages
ISBN: 9780819452887

Table of Contents
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Metrology requirements for lithography's next wave
Author(s): Harry J. Levinson
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Low vacuum microscopy for mask metrology
Author(s): David C. Joy
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Phase defect detection with spatial heterodyne interferometry
Author(s): Philip R. Bingham; Kenneth W. Tobin; Marylyn H. Bennett; Pat Marmillion
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Characterization of new CD photomask standards
Author(s): Werner Mirande; Bernd Bodermann; Wolfgang Haessler-Grohne; Carl Georg Frase; Slawomir Czerkas; Harald Bosse
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Simultaneous critical dimension and overlay measurements on a SEM through target design for inline manufacturing lithography control
Author(s): Eric P. Solecky; Jaime D. Morillo
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A New Approach to Pattern Metrology
Author(s): Christopher P. Ausschnitt
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Scanner overlay mix and match matrix generation: capturing all sources of variation
Author(s): Stephen J. DeMoor; Jay M. Brown; John C. Robinson; Simon Chang; Colin Tan
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High-resolution optical overlay metrology
Author(s): Richard M. Silver; Ravikiran Attota; Michael Stocker; Michael Bishop; Jau-Shi Jay Jun; Egon Marx; Mark P. Davidson; Robert D. Larrabee
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Alignment in chromeless masks
Author(s): Moitreyee Mukherjee-Roy; Navab Singh; Sohan Singh Mehta; Hideki Suda; Takao Kubota; Yasuki Kimura; Hiroshi Kinoshita
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Alignment mark signal simulation system for the optimum mark feature selection
Author(s): Takashi Sato; Ayako Endo; Tatsuhiko Higashiki; Kazutaka Ishigo; Takuya Kono; Takashi Sakamoto; Yoshiyuki Shioyama; Satoshi Tanaka
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Evaluation of alignment performance of different exposure tools under various CMP conditions
Author(s): Irit K. Abramovich; Woong-Jae Chung
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Overlay measurement tool up to 70-nm design rule
Author(s): Tatsuo Fukui; Hiroshi Aoki; Takeshi Endo; Tomoaki Yamada
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Reducing measurement uncertainty drives the use of multiple technologies for supporting metrology
Author(s): Bill Banke; Charles N. Archie; Matthew Sendelbach; Jim Robert; James A. Slinkman; Phil Kaszuba; Rick Kontra; Mick DeVries; Eric P. Solecky
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Determination of optimal parameters for CD-SEM measurement of line-edge roughness
Author(s): Benjamin D. Bunday; Michael Bishop; Donald W. McCormack; John S. Villarrubia; Andras E. Vladar; Ronald Dixson; Theodore V. Vorburger; N. George Orji; John A. Allgair
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CD metrology for the 45-nm and 32-nm nodes
Author(s): Bryan J. Rice; Heidi B. Cao; Ovijut Chaudhuri; Michael G. Grumski; Bruce D. Harteneck; Alex Liddle; Deidre Olynick; Jeanette M. Roberts
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90-nm lithography process characterization using ODP scatterometry technology
Author(s): Chih-Ming Ke; Shinn-Sheng Yu; Yu-Hsi Wang; Yu-Jun Chou; Jeng-Horng Chen; Bih-Huey Lee; Hong-Yuan Chu; Hua-Tai Lin; Tsai-Sheng Gau; Chih-Hsiang Lin; Yao-Ching Ku; Burn Jeng Lin; Jacky Huang; J. J. Hsu; Victor Liu; Dave Hetzer; Lip Yap; Wenge Yang; Kaoru Araki
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Quantification of CD-SEM wafer global charging effect on CD and CD uniformity of 193 nm lithography
Author(s): Chih-Ming Ke; Hsueh-Liang Hung; Anderson Chang; Jeng-Horng Chen; Tsai-Sheng Gau; Yao-Ching Ku; Burn Jeng Lin; Tadashi Otaka; Kazuhiro Ueda; Hiroki Kawada; Hiroaki Nomura; Nelson Ren
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Improved overlay metrology device correlation on 90-nm logic processes
Author(s): Atsushi Ueno; Kouichirou Tsujita; Hiroyuki Kurita; Yasuhisa Iwata; Mark Ghinovker; Jorge M. Poplawski; Elyakim Kassel; Mike E. Adel
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Effective-medium model for fast evaluation of scatterometric measurements on gratings
Author(s): Andrea Weidner; Matthias Slodowski; Christian Halm; Claus Schneider; Lothar Pfitzner
A simple robust bias-free method of calculating CD-SEM resolution
Author(s): Ira J Rosenberg
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Effects of different processing conditions on line-edge roughness for 193-nm and 157-nm resists
Author(s): Monique Ercken; Leonardus Hendrikus Albertino Leunissen; Ivan Pollentier; George P. Patsis; Vassilios Constantoudis; Evangelos Gogolides
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Across-wafer CD uniformity enhancement through control of multizone PEB profiles
Author(s): Qiaolin Zhang; Paul D. Friedberg; Cherry Tang; Bhanwar Singh; Kameshwar Poolla; Costas J. Spanos
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Assessments on process parameters' influences to the proximity correction
Author(s): Eun-Mi Lee; Sung-Woo Lee; Doo-Youl Lee; Soo-Han Choi; Joo-On Park; Sung-Gon Jung; Gi-Sung Yeo; Jung-Hyeon Lee; Han-Ku Cho; Woo-Sung Han
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Multivariate analysis of a 100-nm process measured by in-line scatterometry
Author(s): Sebastien Egret; Tetsunari Furusho; Bart Baudemprez
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Lithography process window analysis with calibrated model
Author(s): Wenzhan Zhou; Jin Yu; James Lo; Johnson Liu
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Improving the uncertainty of photomask linewidth measurements
Author(s): J. Marc Pedulla; James Potzick; Richard M. Silver
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Contact hole edge roughness: circles vs. stars
Author(s): Andrew Habermas; Qingyou Lu; David Chase-Colin; Michael Har-Zvi; Aviram Tam; Omer Sagi
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Reticle surface contaminants and their relationship to sub-pellicle defect formation
Author(s): Brian J. Grenon; Kaustuve Bhattacharyya; William Waters Volk; Khoi A. Phan; Andre Poock
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An image stitching method to eliminate the distortion of the sidewall in linewidth measurement
Author(s): Xuezeng Zhao; Joseph Fu; Wei Chu; Cattien Nguyen; Theodore V. Vorburger
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A new optical technique for monitoring wafer curvature and stress during copper damascene processing
Author(s): Carol A. Boye; Ronald Carpio; Jennifer Woodring; David M. Owen
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Comparison of actinic lens characterization by aerial image evaluation and interferometric testing for 157-nm high-NA micro-objectives
Author(s): Horst Schreiber
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A comparison of methods for in-chip overlay control at the 65-nm node
Author(s): John C. Robinson; Mark Stakely; Jorge M. Poplawski; Pavel Izikson; Elyakim Kassel; Mike E. Adel
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Evaluation of new in-chip and arrayed line overlay target designs
Author(s): Ravikiran Attota; Richard M. Silver; Michael Bishop; Egon Marx; Jau-Shi Jay Jun; Michael Stocker; Mark P. Davidson; Robert D. Larrabee
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Target noise in overlay metrology
Author(s): Joel L. Seligson; Mike E. Adel; Pavel Izikson; Vladimir Levinski; Dan Yaffe
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The estimation of total measurement uncertainty in a multiple metrology tool environment
Author(s): Justin J. Hwu; Thao John Pham; Sukhbir Dulay; Andrew Lopez; Peter Wilkens
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Characterization of a 100-nm 1D pitch standard by metrological SEM and SFM
Author(s): Wolfgang Haessler-Grohne; Thorsten Dziomba; Carl Georg Frase; Harald Bosse; Jerry Prochazka
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OPC accuracy and process window verification methodology for sub-100-nm node
Author(s): Hyunjo Yang; Chanha Park; Jongkyun Hong; Goomin Jeong; Byeongho Cho; Jaeseung Choi; Choonsu Kang; Kiho Yang; Eunsook Kang; Seokho Ji; Donggyu Yim; Youngwook Song
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Results of benchmarking of advanced CD-SEMs at the 90-nm CMOS technology node
Author(s): Benjamin D. Bunday; Michael Bishop; John A. Allgair
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Study of 3D metrology techniques as an alternative to cross-sectional analysis at the R&D level
Author(s): Johann Foucher; Kirk Miller
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3D features analysis using spectroscopic scatterometry
Author(s): Richard Quintanilha; Philippe Thony; Daniel Henry; Jerome Hazart
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Metrology of LER: influence of line-edge roughness (LER) on transistor performance
Author(s): Atsuko Yamaguchi; Katsuhiko Ichinose; Satoshi Shimamoto; Hiroshi Fukuda; Ryuta Tsuchiya; Kazuhiro Ohnishi; Hiroki Kawada; Takashi Iizumi
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193-nm resist roughness characterization and process propagation investigation using a CD-SEM
Author(s): Thomas Marschner; Anice Lee; Stefan Fuchs; Lars Voelkel; Christian Stief
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Improved etch and CMP process control using in-line AFM
Author(s): Thomas Trenkler; Thomas Kraiss; Ulrich Mantz; Peter Weidner; Rebecca Howland Pinto
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Preliminary evaluation of line-edge roughness metrology based on CD-SAXS
Author(s): Ronald L. Jones; Tengjiao Hu; Christopher L. Soles; Eric K. Lin; Wen-li Wu; Diego M. Casa; Arpan Mahorowala
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Successful application of angular scatterometry to process control in sub-100-nm DRAM device
Author(s): Jin-ah Kim; Seong-Jin Kim; Soo-Bok Chin; Seok-Hwan Oh; Doo-Hoon Goo; Suk-Joo Lee; Sang-Gyun Woo; Han-Ku Cho; Woo-Sung Han; Joo-Tae Moon; Christopher J. Raymond; Michael E. Littau; Byungjoo James Youn; Chang-Jin Sohn
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Total measurement uncertainty and total process precision evaluation of a structural metrology approach to monitoring post-CMP processes
Author(s): Wei Lu; Charles N. Archie; Stacey Stone; Hyoung H. Kang; Prasanna R. Chitturi
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Electrical linewidth metrology for sub-65-nm applications
Author(s): Greet Storms; Shaunee Cheng; Ivan Pollentier
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Sub-50-nm isolated line and trench width artifacts for CD metrology
Author(s): Marco Tortonese; Gian Lorusso; Rene M. Blanquies; Jerry Prochazka; Luca Grella
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Correlating scatterometry to CD-SEM and electrical gate measurements at the 90-nm node using TMU analysis
Author(s): Matthew Sendelbach; Charles N. Archie; Bill Banke; Jason Mayer; Hideaki Nii; Pedro Herrera; Matt Hankinson
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Comparison of solutions to the scatterometry inverse problem
Author(s): Christopher J. Raymond; Michael E. Littau; Andrei Chuprin; Simon Ward
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Optimization of scatterometry parameters for shallow trench isolation (STI) monitor
Author(s): Philippe J Leray; Shaunee Cheng; Stephanie Kremer; Monique Ercken; Ivan Pollentier
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Spectroscopic ellipsometry-based scatterometry for depth and linewidth measurements of polysilicon-filled deep trenches
Author(s): Thomas Hingst; Manfred Moert; Peter Reinig; Elke Backen; Rene Dost; Peter Weidner; John Hopkins; Ted G. Dziura; Assim Elazami; Regina Freed
Show Abstract
Methods for evaluating lithographic performance of exposure tools for the 45-nm node: ECD and scatterometry
Author(s): Karen Huang; Bryan J. Rice; Brian Coombs; Regina Freed
Show Abstract
CD-SEM-based critical shape metrology of integrated circuits
Author(s): Dmitry V. Gorelikov; Jason Remillard; Neal T. Sullivan
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New technique to reconstruct effective 3D profile from tilt images of CD-SEM
Author(s): Hidetoshi Morokuma; Atsushi Miyamoto; Maki Tanaka; Masato Kazui; Atsushi Takane
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Experimental methodology of contact edge roughness on sub-100-nm pattern
Author(s): Tae Yong Lee; Dongchul Ihm; Hyo Chun Kang; Jun Bum Lee; Byoung-Ho Lee; Soo-Bok Chin; Do-Hyun Cho; Yang Hyong Kim; Ho Dong Yang; Kyoung Mo Yang
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Reference metrology using a next-generation CD-AFM
Author(s): Ronald Dixson; Angela Guerry
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193-nm resist shrinkage carryover effect to a post-etch layer due to CD-SEM measurement
Author(s): Gary X. Cao; Nancy J Wheeler; Alan S. Wong
Show Abstract
Damage-free metrology of porous low-k dielectrics using CD-SEM
Author(s): Zhao-Hui Cheng; Mari Nozoe; Makoto Ezumi
Show Abstract
Low-impact resist metrology: the use of ultralow voltage for high-accuracy performance
Author(s): Ganesh Sundaram; Neal T. Sullivan; Tung Mai; Chih-Ming Ke
Show Abstract
Feedforward of mask open measurements on an integrated scatterometer to improve gate linewidth control
Author(s): Matthew Sendelbach; Wesley Natzle; Charles N. Archie; Bill Banke; Dan Prager; Dan Engelhard; Jason Ferns; Asao Yamashita; Merritt Funk; Fumihiko Higuchi; Masayuki Tomoyasu
Show Abstract
Time-based PEB adjustment for optimizing CD distributions
Author(s): Paul D. Friedberg; Cherry Tang; Bhanwar Singh; Thomas Brueckner; Wolfram Gruendke; Bernd Schulz; Costas J. Spanos
Show Abstract
Logic gate scanner focus control in high-volume manufacturing using scatterometry
Author(s): Richard J Dare; Bryan Swain; Michael Laughery
Show Abstract
Overlay advanced process control for foundry application
Author(s): Xudong Wan; Andy Zhou; Fjord Zhang; Jerry Li; Xiaolan Gu; Evert C. Mos; Aernout Kisteman; Vivien Wang; Ron Schuurhuis
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A high-resolution contamination-mode inspection method providing a complete solution to the inspection challenges for advanced photomasks
Author(s): Kaustuve Bhattacharyya; Yao-Tsu Huang; Kong Son; Den Wang; Louie Liu; C. H. Liao; Yi-Ming Dai; Jyh-Ching Lin
Show Abstract
Scatterometry feasibility studies for 0.13-micron flash memory lithography applications: enabling integrated metrology
Author(s): Kevin R. Lensing; Clint Miller; Geoff Chudleigh; Bryan Swain; Michael Laughery; Anita Viswanathan
Show Abstract
Belly button reduction using optimized resist filtration method in CMOS gate pattern process
Author(s): Jeong-Heon Baik; Dong-Jin Lee; Sung-Ho Lee; Sun-Hyung Park; Il-Ho Lee; Jae-Sung Choi
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Overlay errors induced by metallic stress: mechanism and solutions
Author(s): Yulin Yen; Charles Chang; Francis Lin; Jason Su; Tahone Yang
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Infrared spectroscopic ellipsometry in semiconductor manufacturing
Author(s): Pierre-Yves Guittet; Ulrich Mantz; Peter Weidner; Jean-Louis Stehle; Marc Bucchia; Sophie Bourtault; Dorian Zahorski
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Defect learning with 193-nm resists
Author(s): Iris Maege; Beatrix Pinter; Martin Tuckermann; Oreste Donzella
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Development of high-repetition-rate molecular fluorine lasers for metrology and inspection
Author(s): Heinz P. Huber; Michael Bauer; Andreas J. Goertler; Claus F. Strowitzki; Alexander Hohla
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Production control of shallow trench isolation (STI) at the 130-nm node using spectroscopic ellipsometry-based profile metrology
Author(s): Robert M. Peters; Ray H. Chiao; Timothy Eckert; Rene Labra; Dario Nappa; Susan Tang; Jarvis Washington
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Are ambient SO2 levels a valid indicator of projected acid gas filter life?
Author(s): Andrew J Dallas; Lefei Ding; Jon Joriman; Brian Hoang; Jonathan G Parsons; Kevin Seguin
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Automated defect cross-sectioning with an in-line DualBeam
Author(s): Stephanie Blanc-Coquand; Benoit Hinschberger; Eric Rouchouze; Emmanuel Sicurani; Marc Castagna; Matthew Weschler; Larry Dworkin; Didier Renard; Atsavinn Panyasak
Show Abstract
Fine tune W-CMP process with alignment mark selection for optimal metal layer overlay and yield benefits
Author(s): Yuanting Cui; Albert So; Sean Louks
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Metrology exposure-induced resist and ARC damage
Author(s): Jackie Yu; Anita Viswanathan; Mokoto Miyagi; Junichi Uchida; Lawrence Lane; Kelly A. Barry; Machi Kajitani; Toshihiko Kikuchi; K. C. Chan; Fred E. Stanke
Show Abstract
Optical characterization of defects on patterned wafers: exploring light polarization
Author(s): Byoung Ho Lee; Soo-Bok Chin; Do Hyun Cho; Chang-Lyong Song; Jeong-Ho Yeo; Daniel Some; Silviu Reinhorn
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Electrical defect SEM review under the various electric circumstances on SAC layer
Author(s): Tae Yong Lee; Nam-Koong Whan; Byoung Ho Lee; Soo-Bok Chin; Do Hyun Cho; Jong Il Choi; Seo Shik Hur; Ki Hwa Ko; Jeong-Ho Yeo
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Influence of line-edge roughness on MOSFET devices with sub-50-nm gates
Author(s): Kiyoshi Shibata; Naoki Izumi; Kouichirou Tsujita
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Detection method for a T-topped profile in resist patterns by CD-SEM
Author(s): Atsuko Yamaguchi; Hiroshi Fukuda; Osamu Komuro; Shozo Yoneda; Takashi Iizumi
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Robust and efficient image processing scheme for electron beam LSI wafer pattern inspection
Author(s): Takashi Hiroi; Munenori Fukunishi
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Alignment offset analyzer against wafer-induced shift (WIS)
Author(s): Takahiro Matsumoto; Hideki Ina; Koichi Sentoku
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Productivity and yield improvement through implementation of automated defect review SEM at 45° column tilt in a high-capacity production Fab
Author(s): Jackie Tan; Sandeep Kulkarni; Sern Loong Ng; Alok Jain; Vish Srinivasan; Nurit Raccah; Ofer Rotlevi
Show Abstract
Inspection performances of the electron beam inspection system based on projection electron microscopy
Author(s): Ichirota Nagahama; Atsushi Onishi; Yuichiro Yamazaki; Tohru Satake; Nobuharu Noji
Show Abstract
Measurement precision of CD-SEM for 65-nm technology node
Author(s): Hideaki Abe; Hiroshi Motoki; Takahiro Ikeda; Yuichiro Yamazaki
Show Abstract
Investigation of UFO defect on DUV CAR and BARC process
Author(s): Siew Ing Yet; Bong Sang Ko; Soo Man Lee; Mike May
Show Abstract
Advanced alignment optical system for DUV scanner
Author(s): Tadashi Nagayama; Masahiko Yasuda; Yuho Kanaya; Takahiro Masada; Ayako Sugaya
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Barometric pressure compensation to control photoresist film thickness
Author(s): Vandana Vishnu; Mai Randall; Carole J. Pillette; Kyoshige Katayama; Kazuhisa Omura; Ryoichi Uemura; Hiroshi Tomita; Ryoji Ando; Kunie Ogata; Hiromitsu Maejima; Anthony DiDonato; Jim Nicholson
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Toward a complete description of linewidth roughness: a comparison of different methods for vertical and spatial LER and LWR analysis and CD variation
Author(s): Vassilios Constantoudis; George P. Patsis; Leonardus Hendrikus Albertino Leunissen; Evangelos Gogolides
Show Abstract
Edge die focus-exposure monitoring and compensation to improve CD distributions
Author(s): Brad J. Eichelberger; Venkatram Subramony; Augustine Chew; Berta A. Dinu; Dawn Goh; Pei Chin Lim; Kevin M. Monahan
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Optimization method of edge shot yield for various wafer layouts
Author(s): Anna Eidelman; Avi Blau; Irit K. Abramovich
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Enhancing film thickness metrology optical coefficient control
Author(s): Igor Jekauc; Elizabeth Donohue; Bill Roberts
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Effect of inline dose and focus monitoring and control on post-etch CD
Author(s): Berta A. Dinu; Venkatram Subramony; Pei Chin Lim; Dawn Goh; Brad J. Eichelberger; Kwong Boo Chew; Kevin M. Monahan
Show Abstract
Characterizing SiOx Ny ARC materials with laser ellipsometry and DUV reflectometry
Author(s): Gary Guangbin Jiang; Timothy Sun; Donald Pelcher; Jana Clerico; Jui-Ping Li; Yi-Ru Chen
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Edge printability: techniques used to evaluate and improve extreme wafer edge printability
Author(s): Bill Roberts; Cort Demmert; Igor Jekauc; Jason Prettyboy Tiffany
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Application of scatterometry to shallow trench isolation monitoring
Author(s): Ian Dudley; Anjan Somadder
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Real-time optics contamination monitoring using surface acoustic wave technology
Author(s): Steven Rowley
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PSM alignment for Sigma7300: signal quality and resist effects from using the writing DUV laser light, spatial light modulator, and a CCD camera as a measurement tool for 2:nd layer alignment metrology
Author(s): Thomas Ostrom; Sten Lindau; Mats Ekberg; Hans A. Fosshaug; Raoul Zerne
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Dual side wafer metrology for micromachining applications
Author(s): Dan Schurz; Warren W. Flack; Doug Anberg
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Characterization of integrated optical CD for process control
Author(s): Jackie Yu; Junichi Uchida; Youri van Dommelen; Rene Carpaij; Shaunee Cheng; Ivan Pollentier; Anita Viswanathan; Lawrence Lane; Kelly A. Barry; Nickhil Jakatdar
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A novel and robust method for the accurate magnification characterization and calibration of out-of-fab SEM cluster tools
Author(s): Al Sicignano; Arkady Nikitin; Dmitry Yeremin; Tim Goldburt; Bryan Tracy
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Scatterometry for contact hole lithography
Author(s): Kelly A. Barry; Anita Viswanathan; Xinhui Niu; Joerg Bischoff
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Simulation-based mask quality control in a production environment
Author(s): Linyong Pang; Jiunn-Hung Chen; Lynn Cai; Don Lee; Brian Chu; Vinsent Huang; Te-Yang Fang
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Approaching new metrics for wafer flatness: an investigation of the lithographic consequences of wafer non-flatness
Author(s): John Francis Valley; Noel Poduje; Jaydeep Sinha; Neil Judell; Jie Wu; Marc Boonman; Sjef Tempelaars; Youri van Dommelen; Hans Kattouw; Jan Hauschild; William Hughes; Alexis Grabbe; Les Stanton
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Nanocal calibration and pitch recertification of a Hitachi microscale standard
Author(s): Dmitry Yeremin; Arkady Nikitin; Al Sicignano; Matt Sandy; Tim Goldburt; Bryan Tracy
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Three-dimensional measurement by tilting and moving the objective lens in CD-SEM (II)
Author(s): Kazuo Abe; Kouji Kimura; Yasuko Tsuruga; Shin-ichi Okada; Hitoshi Suzuki; Nobuo Kochi; Hirotami Koike; Akira Hamaguchi; Yuichiro Yamazaki
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Investigation of systematical overlay errors limiting litho process performance of thick implant resists
Author(s): Alexandra G. Grandpierre; Roberto Schiwon; Jens -U. Bruch; Christoph Nacke; Uwe Paul Schroeder
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Electron beam inspection system for semiconductor wafer based on projection electron microscopy
Author(s): Tohru Satake; Nobuharu Noji; Takeshi Murakami; Manabu Tsujimura; Ichirota Nagahama; Yuichiro Yamazaki; Atsushi Onishi
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MPPC technique for gate etch process monitoring using CD-SEM images and its validity verification
Author(s): Maki Tanaka; Chie Shishido; Yuji Takagi; Hidetoshi Morokuma
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Application of the rigorous treatment for the characterization of sub-micron structures on photomasks
Author(s): Peter Triebel; Peter Weissbrodt; Stefan Nolte; Ernst Bernhard Kley; Andreas Tuennermann
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Dielectric antireflection layer optimization: correlation of simulation and experimental data
Author(s): Yiming Gu; Anthony Wang; Dyiann Chou
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OCD study of critical dimension and line-shape control of shallow-trench-isolation structures
Author(s): Ye Feng; Xiaodong Zhang; Beverly Cheung; Zhuan Liu; Mita Isao; Manabu Hayashi
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Qualification of a low-cost high-quality reticle process for 90-nm contact layers
Author(s): Kirk J. Strozewski; Joe Perez; Rusty Carter; Robert Kiefer; Curt Jackson; Susan MacDonald; Franklin Kalk
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Mask line monitor: process improvements and yield learning
Author(s): Yiyang Jenny Wang; Andrew J Watts
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Height and sidewall angle SEM metrology accuracy
Author(s): Roman Kris; Ofer Adan; Aviram Tam; Albert Yu. Karabekov; Ovadya Menadeva; Ram Peltinov; Ayelet Pnueli; Oren Zoran; Arcadiy Vilenkin
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CD-SEM application for generic analysis of two-dimensional features on wafers and reticles
Author(s): Roman Kris; Aviram Tam; Ovadya Menadeva; Ram Peltinov; Liraz Segal; Nadav Wertsman; Ofer Adan; Naftali Shcolnik; Gidi Gottlib; Arcadiy Vilenkin
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Improvement of aluminum interconnect overlay measurement capability through metrology and hardmask process development
Author(s): Albert L. Ihochi; Matthew E. Ross
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Prospects for using primary electron-based CD metrology
Author(s): Bryan J. Rice; Gary L. Crays; Alex Danilevsky; Michael G. Grumski; Shunsuke Koshihara; Tadashi Otaka; Jeanette M. Roberts
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Aerial image measurement technique for fast evaluation of 193-nm lithography masks
Author(s): Axel M. Zibold; Thomas Scheruebl; Wolfgang Harnisch; Robert Brunner; J. Greif
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Quasi-Brewster angle technique for evaluating the quality of optical surfaces
Author(s): Jue Wang; Robert L Maier
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New methodology for evaluating and quantifying reticle line end shortening
Author(s): Mark C Simmons; John V. Jensen; Robert Muller; Andrew M. Jost
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Innovative rapid photogoniometry method for CD metrology
Author(s): Pierre Boher; Mathieu Luet; Thierry Leroux; Jerome Petit; Pierre Barritault; Jerome Hazart; Patrick Chaton
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Scanning holographic scatterometer for wafer surface inspection
Author(s): Alex Klooster; James Marks; Kael Hanson; Takeo Sawatari
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Characterization and control of sub-100-nm etch and lithography processes using atomic force metrology
Author(s): Kirk Miller; Vincent Geiszler; Dean Dawson
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Linewidth measurement simulations for semiconductor circuits by scatterometry using FDTD and time shortening calculation method
Author(s): Hirokimi Shirasaki; Kunio Ueta
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Arbitrary 3D linewidth form measurement simulations for the next-generation semiconductor circuits by scatterometry using the FDTD method
Author(s): Hirokimi Shirasaki
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Contaminant dry-down rates in photolithography purge gases
Author(s): Allan Tram; Russell J. Holmes; Jeffrey J. Spiegelman; Daniel Alvarez
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Image quality monitoring for enhanced precision and tool matching of CD measuring tools
Author(s): Ayelet Pnueli; Albert Yu. Karabekov; Guy Eytan
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Finite difference algorithm in real-time optical CD applications
Author(s): Jon L. Opsal; Hanyou Chu; Jingmin Leng
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Contact hole application for lithography process development using the Opti-Probe three-dimensional RT/CD technology
Author(s): Zhiming Jiang; Osman Sorkhabi; Hanyou Chu; XueLong Cao; Guangwei Li; Youxian Wen; Jon L. Opsal; Yia-Chung Chang
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Application of spectroscopic ellipsometry-based scatterometry for ultrathin spacer structure
Author(s): Ryan Chia-Jen Chen; Fang-Cheng Chen; Ying-Ying Luo; Baw-Ching Perng; Yuan-Hung Chiu; Hun-Jan Tao
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Laser sample stage-based image resolution enhancement method for SEMs
Author(s): András E. Vladar; Eranga C. Jayewardene; Bradley N. Damazo; William J. Keery; Michael T. Postek
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Carbon nanotube atomic force microscopy cantilevers
Author(s): Yusuf N. Emirov; J. D. Schumacher; B. Lagel; N. Nguyen; Zhifeng Ren; Zhongping Huang; Benjamin B. Rossie; Rudy Schlaf

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