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Proceedings of SPIE Volume 5352

Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII
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Volume Details

Volume Number: 5352
Date Published: 16 June 2004
Softcover: 42 papers (434) pages
ISBN: 9780819452603

Table of Contents
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Femtosecond investigation of carbon nanotubes
Author(s): Christophe Voisin; Jean-Sebastien Lauret; Guillaume Cassabois; Philippe Roussignol; Claude Delalande
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Optical characteristics of hexagonal and cubic GaN self-assembled quantum dots
Author(s): Yong Hoon Cho; B. J. Kown; Julien Barjon; J. Brault; B. Daudin; Henri Mariette; Le Si Dang
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Femtosecond near-field spectroscopy of single quantum dots
Author(s): Christoph Lienau; Tobias Guenther; Thomas Unold; Kerstin Mueller; Thomas Elsaesser
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Time-resolved photoluminescence of the ZnO nanorods: size and temperature dependences
Author(s): Sangsu Hong; Taiha Joo; Won Il Park; Gyu-Chul Yi
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Ultrafast surface plasmon resonance Landau damping and electron kinetics in metal nanoparticles
Author(s): Cyril Guillon; Pierre Langot; Natalia Del Fatti; Fabrice Vallee
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Optical properties and carrier dynamics of InP quantum dots embedded in GaP
Author(s): Fariba Hatami; Lutz Schrottke; Jens W. Tomm; Vadim Talalaev; Christian Kristukat; Alejandro R. Goni; William Ted Masselink
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Ultrafast dephasing of surface plasmon excitation in metal nanoparticles
Author(s): Christian Hendrich; Torsten Ziegler; Johannes Bosbach; Tigran Vartanyan; Frank Hubenthal; Frank Traeger
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Nano-ultrasonics: science and technology
Author(s): Kung-Hsuan Lin; Chia-Lung Hsieh; Tzu-Ming Liu; Stacia Keller; Steven P. DenBaars; Guan-Ting Chen; Chang-Chi Pan; Jen-Inn Chyi; Chi-Kuang Sun
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Third-harmonic generation in carbon nanotubes: theory and experiment
Author(s): Catrinel Stanciu; Rudolf Ehlich; Gregory Ya. Slepyan; A. A. Khrutchinski; Sergey Maksimenko; Fabian Rotermund; Valentin Petrov; Oliver Steinkellner; Frank Rohmund; Eleanor E. B. Campbell; Joachim Herrmann; Ingolf Volker Hertel
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Linear and nonlinear optical properties of single-wall carbon nanotubes
Author(s): Haim Grebel; Jing Chen; H. Han; Y. Diamant
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Ultrafast intersubband transitions in GaN/AlGaN heterostructures at ~1.55-µm wavelength
Author(s): Joerg D. Heber; Claire F. Gmachl; Hock M. Ng; Al Y. Cho
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Ultrafast carrier relaxation in group-III nitride multiple quantum wells
Author(s): Umit Ozgur; Henry O. Everitt; Stacia Keller; Steven P. DenBaars; Lei He; Hadis Morkoc
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Generation of color centers by femtosecond laser pulses in wide-bandgap materials
Author(s): Sergey M. Avanesyan; Stefano Orlando; Steve C. Langford; J. Thomas Dickinson
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Time-resolved photoluminescence studies of Si- and Mg-doped AlN epilayers
Author(s): K. B. Nam; M. L. Nakarmi; J. Li; Jing Yu Lin; Hongxing Jiang
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Picosecond transient photoconductivity in organic molecular crystals
Author(s): Frank A. Hegmann; Oksana Ostroverkhova; Jianbo Gao; Lloyd Barker; Rik R. Tykwinski; John E. Bullock; John E. Anthony
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Far-infrared phonon-polariton dispersion studied by THz time-domain spectroscopy
Author(s): Seiji Kojima; Hideaki Kitahara; Seizi Nishizawa; Mitsuo Wada Takeda
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Electronic charge transport in sapphire studied by optical-pump/THz-probe spectroscopy
Author(s): Feng Wang; Jie Shan; Ernst Knoesel; Mischa Bonn; Tony F. Heinz
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Picosecond structural dynamics in photoexcited semiconductors probed by time-resolved x-ray diffraction
Author(s): Kazutaka G. Nakamura; Hiroaki Kishimura; Yoichiro Hironaka; Ken-ichi Kondo
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Generation and propagation of THz monochromatic acoustic phonons in gallium arsenide
Author(s): Anthony J. Kent; Nicola M. Stanton; Rajeev N. Kini; Mohamed Henini
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Thermal stability of ion-irradiated InGaAs with subpicosecond carrier lifetime
Author(s): Juliette Mangeney; Laurent Joulaud; Jean-Michel Lourtioz; Paul Crozat; Gilles Patriarche
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Picosecond vibrational dynamics and stability of deuterated amorphous silicon thin films
Author(s): Jon-Paul R. Wells; Ruud E.I. Schropp; Lex F. G. van der Meer; Jaap I. Dijkhuis
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Two-dimensional Fourier transform optical spectroscopy of GaAs quantum wells
Author(s): Camelia N. Borca; Tianhao Zhang; Steven T. Cundiff
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Coherent phonon spectroscopy of semiconductor-metal interfaces
Author(s): Yu-Ming Chang
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Evidence of strong phonon-assisted resonant intervalley up-transfer for electroncs in type-II GaAs/AIAs superlattices
Author(s): Xiaodong Mu; Yujie J. Ding; Zhiming Wang; Gregory J. Salamo
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Ultrafast carrier dynamics in highly resistive InP and InGaAs produced by ion implantation
Author(s): Saulius Marcinkevicius; Christine Carmody; Andreas Gaarder; Hark Hoe Tan; Chennupati Jagadish
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Author(s): Henry M. van Driel; Yaser Kerachian; Beata Derkowska; Ravi D. Bhat; John E. Sipe; Martin Stevens; Arthur L. Smirl
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Fabrication and performance of hybrid photoconductive devices based on freestanding LT-GaAs
Author(s): Roman Adam; Martin Mikulics; Shuai Wu; Xuemei Zheng; Michel Marso; I. Camara; F. Siebe; R. Güsten; Arno Foerster; Peter Kordos; Roman Sobolewski
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Coherent vs. incoherent charge transport in semiconductor quantum cascade structures
Author(s): Michael Woerner; Felix Eickemeyer; Klaus Reimann; Thomas Elsaesser; Stefano Barbieri; Carlo Sirtori; T. Mueller; Rudolf Bratschitsch; Karl Unterrainer; G. Strasser
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Dynamics of stimulated emission in InAs quantum dot laser structures measured in pump-probe experiments
Author(s): Alexander I. Tartakovskii; Kristian M. Groom; Ali M. Adawi; Aristide Lemaître; David J. Mowbray; Maurice S. Skolnick; Mark Hopkinson
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Intersubband transitions in GaN/AlN quantum wells for Tb/s optical switching
Author(s): Norio Iizuka; Kei Kaneko; Nobuo Suzuki
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Picosecond electrical excitation of a two-dimensional electron gas
Author(s): Eric A. Shaner; Stephen A. Lyon; L. W. Engel
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Ultrafast optoelectronic devices using laser-assisted field emission
Author(s): Mark J. Hagmann
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Picosecond range switching of a GaAs avalanche transistor due to bulk carrier generation by avalanching Gunn domains
Author(s): Sergey N. Vainshtein; Valentin S. Yuferev; Juha T Kostamovaara
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Single-HBT-based optical receiver front-end
Author(s): Parthasarathi Chakrabarti; Pankaj Kalra; Shishir Agrawal
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Subpicosecond Raman studies of nonequilibrium electron transport in an In0.4Ga0.6N epilayer grown on GaN
Author(s): W. Liang; Kong-Thon Tsen; David K. Ferry; K. H. Kim; Jing Yu Lin; Hongxing Jiang
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Electron and hole velocity overshoots in an Al0.3Ga0.7As-based p-i-n semiconductor nanostructure observed by subpicosecond time-resolved Raman spectroscopy
Author(s): W. Liang; Kong-Thon Tsen; David K. Ferry
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