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Proceedings of SPIE Volume 5040

Optical Microlithography XVI
Editor(s): Anthony Yen
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Volume Details

Volume Number: 5040
Date Published: 26 June 2003
Softcover: 173 papers (1848) pages
ISBN: 9780819448453

Table of Contents
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Experimental determination of lens aberrations from the intensity point-spread function in the focal region
Author(s): Peter Dirksen; Joseph J. M. Braat; Augustus J. E. M. Janssen; Casper A. H. Juffermans; Ad Leeuwestein
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Evaluation of Litel's in-situ interferometer (ISI) technique for measuring projection lens aberrations: an initial study
Author(s): Peter De Bisschop
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Size-dependent flare and its effect on imaging
Author(s): Stephen P. Renwick; Steve D. Slonaker; Taro Ogata
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Impact of across-pupil transmittance variation in projection lenses on fine device pattern imaging
Author(s): Kazuya Sato; Shoji Mimotogi; Soichi Inoue; Tatsuhiko Higashiki
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Illumination pupil fill measurement and analysis and its application in scanner V-H bias characterization for 130-nm node and beyond
Author(s): Gary Zhang; Changan Wang; Colin L. Tan; John Robert Ilzhoefer; Chris Atkinson; Stephen P. Renwick; Steve D. Slonaker; David Godfrey; Catherine H. Fruga
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Methods for benchmarking photolithography simulators
Author(s): Mark D. Smith; Chris A. Mack
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Fast and rigorous three-dimensional mask diffraction simulation using Battle-Lemarie wavelet-based multiresolution time-domain method
Author(s): Michael S. Yeung
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Improved modeling performance with an adapted vectorial formulation of the Hopkins imaging equation
Author(s): Konstantinos Adam; Yuri Granik; Andres Torres; Nicolas B. Cobb
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Fast topography simulation using differential method
Author(s): Sonny Y. Zinn; Sung-Hyuck Kim; Sung-Woon Choi; Jung-Min Sohn
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Rigorous simulation of exposure over nonplanar wafers
Author(s): Andreas Erdmann; Christian K. Kalus; Thomas Schmoeller; Yewgenija Klyonova; Takashi Sato; Ayako Endo; Tsuyoshi Shibata; Yuuji Kobayashi
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Sensitivity of rinse, dry, and etch parameters
Author(s): Sang-Kon Kim
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Impact of wavefront errors on low k1 processes at extremely high NA
Author(s): Paul Graeupner; Reiner B. Garreis; Aksel Goehnermeier; Tilmann Heil; Martin Lowisch; Donis G. Flagello
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Analysis of imaging performance degradation
Author(s): Koichi Matsumoto; Tomoyuki Matsuyama; Shigeru Hirukawa
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Optimizing and enhancing optical systems to meet the low k<sub>1</sub> challenge
Author(s): Donis G. Flagello; Robert John Socha; Xuelong Shi; Jan B.P. van Schoot; Jan Baselmans; Mark A. van de Kerkhof; Wim de Boeij; Andre Engelen; Rene Carpaij; Oscar Noordman; Marco H. P. Moers; Melchior Mulder; Jo Finders; Henk van Greevenbroek; Martin Schriever; Manfred Maul; Helmut Haidner; Markus Goeppert; Ulrich Wegmann; Paul Graeupner
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Measuring and modeling flare in optical lithography
Author(s): Chris A. Mack
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Characterizing illumination angular uniformity with phase-shifting masks
Author(s): Gregory McIntyre; Andrew R. Neureuther
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Critical evaluation of photomask needs for competing 65-nm node RET options
Author(s): Christopher J. Progler; Guangming Xiao
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The MEF revisited: low k<sub>1</sub> effects versus mask topography effects
Author(s): Christophe Pierrat; Alfred K. K. Wong
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Dark-field high-transmission chromeless lithography
Author(s): George E. Bailey; Neal P. Callan; Kunal N. Taravade; John V. Jensen; Benjamin George Eynon; Patrick M. Martin; Henry H. Kamberian; Darren Taylor; Rick S. Farnbach
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65-nm full-chip implementation using double dipole lithography
Author(s): Stephen D. Hsu; J. Fung Chen; Noel Cororan; William T. Knose; Douglas J. Van Den Broeke; Thomas L. Laidig; Kurt E. Wampler; Xuelong Shi; Michael Hsu; Mark Eurlings; Jo Finders; Tsann-Bim Chiou; Robert John Socha; Will Conley; Yen Wu Hsieh; Steve Tuan; Frank Hsieh
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Full-level alternating PSM for sub-100nm DRAM gate patterning
Author(s): Rainer Pforr; Marco Ahrens; Wolfgang Dettmann; Mario Hennig; Roderick Koehle; Burkhard Ludwig; Nicolo Morgana; Joerg Thiele
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Layer-specific illumination optimization by Monte Carlo method
Author(s): Ho-Chul Kim; Dong-Seok Nam; Chan Hwang; Young Seog Kang; Sang-Gyun Woo; Han-Ku Cho; Woo-Sung Han
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Evaluation of ArF CLM in the sub-100-nm DRAM cell
Author(s): Ju-Hyung Lee; Dong-Hoon Chung; Ho-Chul Kim; Dong-Seok Nam; Sang-Gyun Woo; Han-Ku Cho; Woo-Sung Han
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157-nm lithography for 65-nm node SRAM-gate
Author(s): Toshifumi Suganaga; Shigeo Irie; Seiro Miyoshi; Jae-Hwan Kim; Kunio Watanabe; Eiji Kurose; Takamitsu Furukawa; Takuya Hagiwara; Toshiyuki Ishimaru; Toshiro Itani
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ArF solutions for low-k<sub>1</sub> back-end imaging
Author(s): Vincent Wiaux; Patrick K. Montgomery; Geert Vandenberghe; Philippe Monnoyer; Kurt G. Ronse; Will Conley; Lloyd C. Litt; Kevin Lucas; Jo Finders; Robert Socha; Douglas J. Van Den Broeke
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Full phase-shifting methodology for 65-nm node lithography
Author(s): Christophe Pierrat; Frank A. J. M. Driessen; Geert Vandenberghe
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Alternating phase-shift masks for contact patterning
Author(s): Richard E. Schenker; Gary A. Allen; Edita Tejnil; Shem Ogadhoh
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Scaling rules of phase error control for the manufacturing of alternating phase-shifting masks for 193-nm photolithography and beyond
Author(s): Qiang Wu; Scott Halle; Scott J. Bukofsky; Shahid A. Butt; Michael S. Hibbs
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The impact of mask topography and resist effects on optical proximity correction in advanced alternating phase-shift process
Author(s): Mosong Cheng; Benjamin C. P. Ho; Doug E. Guenther
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Limits of strong phase-shift patterning for device research
Author(s): Michael Fritze; Renee D. Mallen; Bruce Wheeler; Donna Yost; John P. Snyder; Bryan S. Kasprowicz; Benjamin George Eynon; Hua-Yu Liu
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Vortex via process: analysis and mask fabrication for contact CDs <80 nm
Author(s): Marc D. Levenson; Sze Meng Tan; Grace Dai; Yasutaka Morikawa; Naoya Hayashi; Takeaki Ebihara
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Application of in-situ aberration measurements to pattern-specific imaging optimization
Author(s): Steve D. Slonaker; Robert J. Chung
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Novel strong-resolution enhancement technology with phase-shifting mask for logic gate pattern fabrication
Author(s): Takahiro Matsuo; Akio Misaka; Masaru Sasago
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Forbidden pitch or duty-free: revealing the causes of across-pitch imaging differences
Author(s): Bruce W. Smith
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Process, design, and optical proximity correction requirements for the 65nm device generation
Author(s): Kevin Lucas; Patrick Montgomery; Lloyd C. Litt; Will Conley; Sergei V. Postnikov; Wei Wu; Chi-Min Yuan; Marc Olivares; Kirk Strozewski; Russell L. Carter; James Vasek; David Smith; Eric L. Fanucchi; Vincent Wiaux; Geert Vandenberghe; Olivier Toublan; Arjan Verhappen; Jan Pieter Kuijten; Johannes van Wingerden; Bryan S. Kasprowicz; Jeffrey W. Tracy; Christopher J. Progler; Eugene Shiro; Igor Topouzov; Karl Wimmer; Bernard J. Roman
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Optical rule checking for proximity-corrected mask shapes
Author(s): Maharaj Mukherjee; Zachary Baum; John Nickel; Timothy G. Dunham
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Failure prediction across process window for robust OPC
Author(s): Shumay D. Shang; Yuri Granik; Nicolas B. Cobb; Wilhelm Maurer; Yuping Cui; Lars W. Liebmann; James M. Oberschmidt; Rama Nand Singh; Ben R. Vampatella
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A methodology to calculate line-end correction feature performance as a function of reticle cost
Author(s): Lawrence S. Melvin; James P. Shiely; Michael L. Rieger; Benjamin Painter
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Trends in systematic nonparticle yield loss mechanisms and the implication for IC design
Author(s): C. Neil Berglund
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ACLV-analysis in production and its impact on product performance
Author(s): Rolf Seltmann; Rolf Stephan; Martin Mazur; Christopher Spence; Bruno La Fontaine; Dirk Stankowski; Andre Poock; Wolfram Grundke
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Scatterometer-based scanner fingerprinting technique (ScatterLith) and its applications in image field and ACLV analysis
Author(s): Changan Wang; Gary Zhang; Stephen J. DeMoor; Mark A. Boehm; Michael E. Littau; Christopher J. Raymond
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Improvement of shot uniformity on a wafer by controlling backside transmittance distribution of a photomask
Author(s): Jong Rak Park; Soon Ho Kim; Gi-Sung Yeo; Sung-Woon Choi; Won-Tai Ki; Hee-Sun Yoon; Jung-Min Sohn
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Flare-induced CD variation correction using transmittance controlled mask
Author(s): Dong-Seok Nam; Gi-Sung Yeo; Jong Rak Park; Sung-Woon Choi; Sang-Gyun Woo; Han-Ku Cho; Woo-Sung Han
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Generating sub-30-nm polysilicon gates using PECVD amorphous carbon as hardmask and anti-reflective coating
Author(s): Wei Liu; David Mui; Thorston Lill; May Dongmei Wang; Christopher Bencher; Michael Kwan; Wendy Yeh; Takeaki Ebihara; Toshihiro Oga
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Study of the influence of substrate topography on the focusing performance of advanced lithography scanners
Author(s): Bruno M. La Fontaine; Jan Hauschild; Mircea V. Dusa; Alden Acheta; Eric M. Apelgren; Marc Boonman; Jouke Krist; Ashok Khathuria; Harry J. Levinson; Anita Fumar-Pici; Marco Pieters
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Simple and highly sensitive focus monitoring utilizing an aperture on backside of photomask
Author(s): Shuji Nakao; Junjirou Sakai; Shinroku Maejima; Atsushi Ueno; Akihiro Nakae; Shigenori Yamashita; Ken-ichi Itano; Hidehiko Kozawa; Akira Tokui; Kouichirou Tsujita
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Novel in-situ focus monitor technology in attenuated PSM under actual illumination condition
Author(s): Kyoko Izuha; Masafumi Asano; Tadahito Fujisawa; Soichi Inoue
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Desirable wafer edge flatness for CD control in photolithography
Author(s): Tadahito Fujisawa; Soichi Inoue; Tsuneyuki Hagiwara; Kodama Kennichi; Makoto Kobayashi; Katsuya Okumura
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Aberration's impact on subresolution contact hole process windows in ultrathin imaging resist
Author(s): Michael T. Reilly; Jo Finders; Mircea Dusa
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Image performance and mask characterization of 157-nm alternating phase-shifting mask
Author(s): Yung-Tin Chen; Jeff Meute; Kim R. Dean; David R. Stark; Christof M. Schilz; Wolfgang Dettmann; Roderick Koehle; Bettina Schiessl; Wolfgang Degel
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157-nm Micrascan VII initial lithography results
Author(s): Harry Sewell; Bruce A. Tirri; Timothy O'Neil; Thomas J. Fahey; Diane C. McCafferty; Paul B. Reid; James A. McClay
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Status of 157-nm lithography development at IMEC
Author(s): Kurt G. Ronse; Peter De Bisschop; Astrid Eliat; Anne-Marie Goethals; Jan Hermans; Rik Jonckheere; Dieter Van Den Heuvel; Frieda Van Roey; Stephan Beckx; Johan M.D. Wouters; Jean-Francois de Marneffe; Timothy O'Neil; Bruce Tirri; Harry Sewell
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Contamination rates of optical surfaces at 157 nm: impurities outgassed from construction materials and from photoresists
Author(s): Theodore M. Bloomstein; Jan H. C. Sedlacek; Stephen T. Palmacci; Dennis E. Hardy; Vladimir Liberman; Mordechai Rothschild
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Optical anisotropy in the cubic crystal of CaF2: scaling arguments and their relation to dispersing absorption
Author(s): Martin Letz; A. Gottwald; M. Richter; Matthias Brinkmann; G. Wehrhan; Lutz Parthier
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Deep UV immersion interferometric lithography
Author(s): Alex K. Raub; Steven R. J. Brueck
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Water immersion optical lithography for the 45-nm node
Author(s): Bruce W. Smith; Hoyoung Kang; Anatoly Bourov; Frank Cropanese; Yongfa Fan
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Immersion liquids for lithography in the deep ultraviolet
Author(s): Michael Switkes; Roderick R. Kunz; Roger F. Sinta; Mordechai Rothschild; Paula M. Gallagher-Wetmore; Val J. Krukonis; Kara Williams
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Simulation of imaging and stray light effects in immersion lithography
Author(s): Scott Hafeman; Andrew R. Neureuther
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Preliminary microfluidic simulation for immersion lithography
Author(s): Alexander C. Wei; Greg F. Nellis; Amr Y. Abdo; Roxann L. Engelstad; Cheng-Fu Chen; Michael Switkes; Mordechai Rothschild
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Critical enabling properties of CaF2 lens blanks for state-of-the-art lithography tools
Author(s): Joerg Hahn; Guenter Grabosch; Lutz Parthier; Konrad Knapp
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Angle-resolved scattering measurements of polished surfaces and optical coatings at 157 nm
Author(s): Theodore M. Bloomstein; Dennis E. Hardy; L. Gomez; Mordechai Rothschild
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Optical lithography solutions for sub-65-nm semiconductor devices
Author(s): Jan Mulkens; James A. McClay; Bruce A. Tirri; Martin Brunotte; Birgit Mecking; Hans Jasper
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Development status of a 157-nm full-field scanner
Author(s): Hitoshi Nakano; Hideo Hata; Hideki Nogawa; Nobuyoshi Deguchi; Michio Kohno; Yuji Chiba
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Nikon F2 exposure tool development
Author(s): Soichi Owa; Yukako Matsumoto; Yasuhiro Ohmura; Shigeru Sakuma; Takashi Aoki; Jin Nishikawa; Hiroyuki Nagasaka; Takeyuki Mizutani; Naomasa Shiraishi; Kazuhiro Kido; Issei Tanaka; Jun Nagatsuka
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Catadioptric lens development for DUV and VUV projection optics
Author(s): Yasuhiro Ohmura; Masahiro Nakagawa; Tomoyuki Matsuyama; Yuichi Shibazaki
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0.85-NA ArF exposure system and performance
Author(s): Tsuneo Kanda; Yoshihiro Shiode; Ken-ichiro Shinoda
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Improving lens performance through the most recent lens manufacturing process
Author(s): Tomoyuki Matsuyama; Issei Tanaka; Toshihiko Ozawa; Kazushi Nomura; Takashi Koyama
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Next-generation scanner for sub-100-nm lithography
Author(s): Itaru Fujita; Fumio M. Sakai; Shigeyuki Uzawa
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Performance of a high-NA dual-stage 193-nm TWINSCAN Step and Scan system for 80-nm applications
Author(s): Jos de Klerk; Louis Jorritsma; Eelco van Setten; Richard Droste; Richard du Croo de Jongh; Steven G. Hansen; Dan Smith; Mark A. van de Kerkhof; Frank van de Mast; Paul Graeupner; Thomas Rohe; Klaus Kornitzer
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Imaging performance extendibility
Author(s): Jacek K. Tyminski; Steve D. Slonaker
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Detection of actual focus variations by focus automatic measurement
Author(s): Daigo Hoshino; Takashi Yamauchi; Akira Watanabe; Toshio Onodera; Hidehiro Higashino
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Process window monitoring: an emerging requirement for efficient low-k1 lithography
Author(s): S. S. Chiua; Yao-Chang Chu; J. C. Hsieh; Wang Pen Mo; C. M. Wu; Thomas Teng; Mike D. Slessor
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Lithographic process optimization using process capability analysis
Author(s): Johannes van Wingerden; Peter Dirksen; Casper A. H. Juffermans; Yorick Trouiller
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Characterization of optical proximity matching for 130-nm node gate line width
Author(s): Sandra Zheng; Gary Zhang; ChangAn Wang; Shangting F. Detweiler
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Exposure field size considerations for yield
Author(s): Uwe Paul Schroeder; Gerhard Kunkel
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BARC-resist interfacial interacations
Author(s): Chelladurai Devadoss; Yubao Wang; Rama Puligadda; Joseph L. Lenhart; Erin L. Jablonski; Daniel A. Fischer; Sharadha Sambasivan; Eric K. Lin; Wen-li Wu
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Impact of scanner illumination mode on CD control process margin
Author(s): Shangting F. Detweiler; Sandra Zheng; Mark A. Boehm
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Tool-to-tool matching in photolithography: process control of CD and pitch
Author(s): Luke Kok Chin Ng; WenZhen Zhou
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Characterization and improvement of field CD uniformity for implementation of 0.15-&#956;m technology device using KrF stepper
Author(s): Yoon-Suk Hyun; Dong-Joo Kim; Cha-Won Koh; Sung-Nam Park; Won-Taik Kwon
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Optimization of the contact layer for 90-nm node lithography
Author(s): Kirk J. Strozewski; Lena Zavyalova; Kevin Lucas
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Maximization of process window for low-k1 spaces using KrF lithography
Author(s): Shih-Chi Fu; Ching-Sen Kuo; Feng-Jia Shiu; Jieh-Jang Chen; Chia-Shiung Tsia; Chia-Tong Ho; Chung Wang
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Impact of scattering bars in damascene trench patterning
Author(s): Sohan Singh Mehta; Navab Singh; Moitreyee Mukherjee-Roy; Rakesh Kumar
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Advanced process control applied to 90-nm node lithography and etch
Author(s): Gowri P. Kota; Jorge Luque; Mircea V. Dusa; Adolph Hunter
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Single-write self-aligned rim-phase-shift process
Author(s): Cesar M. Garza; Wei Wu; Bernard J. Roman; Pawitter J. S. Mangat; Kevin J. Nordquist; William J. Dauksher
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Application-specific methods for creating simulation masks
Author(s): William B. Howard; Darren Taylor
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Application of CPL reticle technology for the 65- and 50-nm node
Author(s): Will Conley; Douglas J. Van Den Broeke; Robert John Socha; Wei Wu; Lloyd C. Litt; Kevin Lucas; Carla M. Nelson-Thomas; Bernard J. Roman; J. Fung Chen; Kurt E. Wampler; Thomas L. Laidig; Stephen D. Hsu; Erika Schaefer; Shawn Cassel; Linda Yu; Bryan S. Kasprowicz; Christopher J. Progler; John S. Petersen; David J. Gerold; Mark John Maslow
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Sol-gel fabrication of high-quality photomask substrates
Author(s): Rahul Ganguli; D. Laurence Meixner; Steve G. Colbern; Matt S. Gleason; Douglas E. Meyers; Satyabrata Ray Chaudhuri
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Impact of inter-mask CD error on OPC accuracy in resolution of 90 nm and below
Author(s): Ken Ozawa; Shunichiro Sato; Hidetoshi Ohnuma
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Porous silica frame for deep UV lithography
Author(s): D. Laurence Meixner; Rahul Ganguli; Troy Robinson; De-Yin Jeng; Mark W. Morris; Satyabrata Chaudhuri; Brian J. Grenon
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Enhancement of CD uniformity and throughput with KrF photomask repeater
Author(s): Tae-Joong Ha; Yong-Kyoo Choi; Oscar Han
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Theoretical corner rounding analysis and mask writer simulation
Author(s): Robert L. Jones; Jeffrey D. Byers
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Effects of soft pellicle frame curvature and mounting process on pellicle-induced distortions in advanced photomasks
Author(s): Eric P. Cotte; Roxann L. Engelstad; Edward G. Lovell; Daniel Tanzil; Florence O. Eschbach; Yulia O. Korobko; Minoru Fujita; Hiroaki Nakagawa
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Contact-hole MEEF comparison between ALTA and 50-KeV written masks
Author(s): John L. Sturtevant; Juliann Opitz; James C. Word
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Photoblanks for advanced lithography based on Corning high-purity fused silica (HPFS)
Author(s): Robin M. Walton
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Strategies for predictive control of chrome stress-induced registration errors
Author(s): Alexander C. Wei; Gregory P. Hughes; Aaron J. Chalekian; Lawrence N. Mackey; Andrew R. Mikkelson; Roxann L. Engelstad
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Impact of mask defect in a high MEEF process
Author(s): Chang-Young Jeong; Ki-Yeop Park; Jae-Sung Choi; Jeong-Gun Lee; Dai-Hoon Lee
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Guideline of reticle data management
Author(s): Norihiko Miyazaki; N. Iriki; M. Homma; T. Sato; M. Mori; Tadashi Imoriya; Toshio Onodera; T. Matsuda; Hidehiro Higashino; K. Okuda; Iwao Higashikawa; Nobuyuki Yoshioka
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Extending ArF to the 65-nm node with full-phase lithography
Author(s): Frank A.J.M. Driessen; Christophe Pierrat; Geert Vandenberghe; Kurt G. Ronse; Paul van Adrichem; Hua-Yu Liu
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Evaluation of SCAA mask technology as a pathway to the 65-nm node
Author(s): James V. Beach; John S. Petersen; Mark John Maslow; David J. Gerold; Diane C. McCafferty
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Feasibility evaluations of alternating phase-shift mask for imaging sub-80-nm feature with KrF
Author(s): Myung-Ah Kang; Sung-Hyuck Kim; In-Kyun Shin; Seong-Woon Choi; Jung-Min Sohn
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Optimization of alternating PSM mask process for 65-nm poly-gate patterning using 193-nm lithography
Author(s): Sia-Kim Tan; Qunying Lin; Liang Choo Hsia; Shi-Chung Sun
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Feasibility study of SCAAM-type Alt-PSM for 157-nm lithography
Author(s): Yasutaka Morikawa; Haruo Kokubo; Kenji Noguchi; Shiho Sasaki; Hiroshi Mohri; Morihisa Hoga; Noriyoshi Kanda; Shigeo Irie; Kunio Watanabe; Toshifumi Suganaga; Toshiro Itani
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Simulation of sub-90-nm node complementary phase-shift processes with ArF lithography
Author(s): Mosong Cheng; Benjamin C. P. Ho; Kathleen Nafus
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Model-based PPC verification methodology with two dimentional pattern feature extraction
Author(s): Kohji Hashimoto; Takeshi Ito; Takahiro Ikeda; Shigeki Nojima; Soichi Inoue
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New process models for OPC at sub-90-nm nodes
Author(s): Yuri Granik; Nicolas B. Cobb
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Hybrid PPC methodology using multistep correction and implementation for the sub-100-nm node
Author(s): Soo-Han Choi; Ji-Soong Park; Chul-Hong Park; Won-Young Chung; In-sung Kim; Dong-Hyun Kim; Yoo-Hyon Kim; Moon-Hyun Yoo; Jeong-Taek Kong
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Image fidelity improvement through optical proximity correction and its limits
Author(s): Martin Burkhardt; Nakgeuon Seong
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Challenge for effective OCV control in 90-nm logic gate using ArF lithography
Author(s): Hyun-Jae Kang; Sung-Woo Lee; Doo-Youl Lee; Gi-Sung Yeo; Jung-Hyeon Lee; Han-Ku Cho; Woo-Sung Han; Joo-Tae Moon
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Multiple-stage optical proximity correction
Author(s): Daniel F. Beale; James P. Shiely; Michael L. Rieger
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Mighty high-T lithography for 65-nm generation contacts
Author(s): Will Conley; Patrick K. Montgomery; Kevin Lucas; Lloyd C. Litt; John G. Maltabes; Laurent Dieu; Gregory P. Hughes; David L. Mellenthin; Robert John Socha; Eric L. Fanucchi; Arjan Verhappen; Kurt E. Wampler; Linda Yu; Erika Schaefer; Shawn Cassel; Jan Pieter Kuijten; Wil Pijnenburg; Vincent Wiaux; Geert Vandenberghe
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Improved outline phase-shifting mask (OL-PSM) for reduction of the mask error enhancement factor
Author(s): Akio Misaka; Takahiro Matsuo; Masaru Sasago
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Gate imaging for 0.09-&#956;m logic technology: comparison of single exposure with assist bars and the CODE approach
Author(s): Yorick Trouiller; Jerome Belledent; J. D. Chapon; V. Rousset; Yves Fabien Rody; Serdar Manakli; Pierre-Jerome Goirand
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Low-proximity contact hole formation by using double-exposure technology (DET)
Author(s): Charles Chang; Elvis Yang; Tzong-Shane Wu; Ta-Hung Yang; Calvin C. Hsueh
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Evaluation of various pitches of 100-nm contact holes applying IDEALSmile with high NA KrF scanner
Author(s): Takeaki Ebihara; Toshihiro Oga
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Zero MEF hole formation with Atten-PSM and modified illumination
Author(s): Shuji Nakao; Tadashi Miyagi; Shinji Tarutani; Shigenori Yamashita; Junji Miyazaki; Hidehiko Kozawa; Akira Tokui; Kouichirou Tsujita
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Optical lithography at half the Rayleigh resolution limit by two-photon absorption resist
Author(s): Hiromi Ezaki; Masato Shibuya
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Grating analysis of frequency parsing strategies for imaging interferometric lithography
Author(s): Eric S. Wu; Balu Santhanam; Steven R. J. Brueck
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Dipole options for 90-nm lithography technologies and below
Author(s): Gek Soon Chua; Cho Jui Tay; Chenggen Quan; Qunying Lin; Leng-Hai Chua
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ArF issues of 90-nm-node DRAM device integration
Author(s): Doo-Hoon Goo; Byeong-Soo Kim; Joon-Soo Park; Kwang-Sub Yoon; Jung-Hyeon Lee; Han-Ku Cho; Woo-Sung Han; Joo-Tae Moon
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Process latitude extension in low-k1 DRAM lithography using specific layer-oriented illumination design
Author(s): Young Seog Kang; Dong-Seok Nam; Chan Hwang; Sang-Gyun Woo; Han-Ku Cho; Woo-Sung Han
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Comparative study of chromeless and attenuated phase-shift mask for 0.3-k1 ArF lithography of DRAM
Author(s): Tae-Seung Eom; Chang Moon Lim; Seo-Min Kim; Hee-Bom Kim; Se-Young Oh; Won-Kwang Ma; Seung-Chan Moon; Ki Soo Shin
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Printing 95-nm DRAM full chip patterns in KrF lithography
Author(s): Seok-Kyun Kim; Jin-Soo Kim; Tae-Jun Yoo; Keun-Kyu Kong; Hyoung-Soon Yun; Young-Deuk Kim; Hyoung-Ryeun Kim; Young-Sik Kim; Hyeong-Soo Kim
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Sub-100-nm DRAM cell patterning results and relation with lens aberration at 248-nm lithography era
Author(s): Tae-Jun You; Hyeong-Soo Kim; Jin-Soo Kim; Seok-Kyun Kim; Young-Deuk Kim; Hyeong Sun Youn; Keun-Kyu Kong
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Challenges of implementing 193nm lithography in printing sub-70nm line patterns for thin film heads
Author(s): Chun-Ming Wang; Justin J. Hwu; Timothy J. Minvielle
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High-power excimer lasers for 157-nm lithography
Author(s): Stefan Spratte; Frank Voss; Igor Bragin; Elko Bergmann; Norbert Niemoeller; Tamas Nagy; Ulrich Rebhan; Andreas Targsdorf; Rainer Paetzel; Sergei V. Govorkov; Gongxue Hua
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Overcoming the resolution challenge using special illumination techniques to print 50/50-nm nested contact holes at 157-nm wavelength
Author(s): Nabila Baba-Ali; Harry Sewell; Justin Kreuzer
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Spectral dynamics analysis of utlra-line-narrowed F2 laser
Author(s): Takahito Kumazaki; Osamu Wakabayashi; Ryoichi Nohdomi; Tatsuya Ariga; Hidenori Watanabe; Kazuaki Hotta; Hakaru Mizoguchi; Hiroki Tanaka; Akihiko Takahashi; Tatsuo Okada
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Development of an organic bottom antireflective coating for 157-nm lithography
Author(s): Shigeo Irie; Masato Shigematsu; Seiro Miyoshi; Rikimaru Sakamoto; Kenichi Mizusawa; Yasuyuki Nakajima; Toshiro Itani
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Impact of attenuated phase-shifting mask for 157-nm lithography with high numerical aperture lens
Author(s): Kunio Watanabe; Eiji Kurose; Toshifumi Suganaga; Toshiro Itani
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Bottom antireflective coatings (BARCs) for 157-nm lithography
Author(s): Liu He; Rama Puligadda; Joyce Lowes; Michael D. Rich
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Wavefront aberration measurement in 157-nm high numerical aperture lens
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Experimental assessment of pattern and probe-based aberration monitors
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Tool ranking using aberration measurements in a high-volume manufacturing facilility
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Monolithic detector array comprised of >1000 aerial image sensing elements
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Evaluating scanner lens spherical aberration using scatterometer
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Programmable lithography engine (ProLE) grid-type supercomputer and its applications
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Domain decomposition methods for simulation of printing and inspection of phase defects
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Theoretical consideration on quantum lithography with conventional projection
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Process sensitivity and optimization with full and simplified resist models
Author(s): Mark D. Smith; Chris A. Mack
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Resist footing variation and compensation over nonplanar wafer
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Comparison of vector theories for aerial image calculation
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Validity of the diffused aerial image model: an assessment based on multiple test cases
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Practical resist model calibration
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Image-blur tolerances for 65-nm and 45-nm node IC manufacturing
Author(s): Ivan Lalovic; Armen Kroyan; Jongwook Kye; Hua-Yu Liu; Harry J. Levinson
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Aberration optimizing system using Zernike sensitivity method
Author(s): Yasuo Shimizu; Tadashi Yamaguchi; Kousuke Suzuki; Yuji Shiba; Tomoyuki Matsuyama; Shigeru Hirukawa
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Web tool for worst-case assessment of aberration effects in printing a layout
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Evaluation of Zernike sensitivity method for CD distribution
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Boundary layer model to account for thick mask effects in photolithography
Author(s): Jaione Tirapu-Azpiroz; Paul Burchard; Eli Yablonovitch
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Accelerated damage to blank and antireflectance-coated CaF2 surfaces under 157-nm laser irradiation
Author(s): Vladimir Liberman; Mordechai Rothschild; Stephen T. Palmacci; Nikolay N. Efremow; Jan H. C. Sedlacek; Andrew Grenville
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Compaction and rarefaction of fused silica with 193-nm excimer laser exposure
Author(s): J. Martin Algots; Richard Sandstrom; William N. Partlo; Petar Maroevic; Eric Eva; Michael Gerhard; Ralf Linder; Frank Stietz
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193-nm detector nonlinearity measurement system at NIST
Author(s): Shao Yang; Darryl A. Keenan; Holger Laabs; Marla L. Dowell
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New lens barrel structure utilized on the FPA-6000AS4 and its contribution to the lens performance
Author(s): Yuji Sudoh; Tsuneo Kanda
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Excimer lasers for superhigh NA 193-nm lithography
Author(s): Rainer Paetzel; Hans Stephan Albrecht; Peter Lokai; Wolfgang Zschocke; Thomas Schmidt; Igor Bragin; Thomas Schroeder; Christian Reusch; Stefan Spratte
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Stage accuracy results using interferometers compensated for refractivity fluctuations
Author(s): Philip D. Henshaw; Pierre C. Trepagnier; Robert F. Dillon; Wouter Pril; Bas Hultermans
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High-performance beam stabilization for next-generation ArF beam delivery systems
Author(s): Leonard Lublin; David Warkentin; Palash P. Das; Alexander I. Ershov; Jody Vipperman; Ronald L. Spangler; Brian Klene
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Dual-chamber ultra line-narrowed excimer light source for 193-nm lithography
Author(s): Vladimir B. Fleurov; Daniel J. Colon; Daniel J. W. Brown; Patrick O'Keeffe; Herve Besaucele; Alexander I. Ershov; Fedor Trintchouk; T. Ishihara; Paolo Zambon; R. J. Rafac; A. Lukashev
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Ultra line-narrowed ArF excimer laser G42A for sub-90-nm lithography generation
Author(s): Takashi Saito; Toru Suzuki; Masaya Yoshino; Osamu Wakabayashi; Takashi Matsunaga; Junichi Fujimoto; Kouji Kakizaki; Taku Yamazaki; Toyoharu Inoue; Katsutomo Terashima; Tatsuo Enami; Hirotoshi Inoue; Akira Sumitani; Hitoshi Tomaru; Hakaru Mizoguchi
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New concerns with the design of filters for the protection of lithography optics
Author(s): Andrew J. Dallas; William Ding; Brian Hoang; Jon Joriman; Jonathan G. Parsons; Kevin Seguin
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Outlier rejection with mixture models in alignment
Author(s): Shinichi Nakajima; Yuho Kanaya; Mengling Li; Taro Sugihara; Ayako Sukegawa; Nobutaka Magome
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Ambient effects on the laser durability of 157-nm optical coatings
Author(s): Vladimir Liberman; Mordechai Rothschild; Stephen T. Palmacci; Nikolay N. Efremow; Jan H. C. Sedlacek; Andrew Grenville
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Immersion lithography: its potential performance and issues
Author(s): Soichi Owa; Hiroyuki Nagasaka
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Simulation study of process latitude for liquid immersion lithography
Author(s): So-Yeon Baek; Daniel C. Cole; Mordechai Rothschild; Michael Switkes; Michael S. Yeung; Eytan Barouch
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Measurement of the refractive index and thermo-optic coefficient of water near 193 nm
Author(s): John H. Burnett; Simon Kaplan
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Simulation benchmarking
Author(s): Jacek K. Tyminski; Toshiharu Nakashima; Takehito Kudo; Steve D. Slonaker; Shigeru Hirukawa
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Scattering losses in fused silica and CaF2 for DUV applications
Author(s): Stephan L. Logunov; Sergey A Kuchinsky
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Deep-UV liquid immersion mastering of high-density optical discs
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