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PROCEEDINGS VOLUME 5039

Advances in Resist Technology and Processing XX

*This item is only available on the SPIE Digital Library.


Volume Details

Volume Number: 5039
Date Published: 12 June 2003

Table of Contents
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Extendibility of chemically amplified resists: another brick wall?
Author(s): William D. Hinsberg; Frances A. Houle; Martha I. Sanchez; John A. Hoffnagle; Gregory M. Wallraff; David R. Medeiros; Gregg M. Gallatin; Jonathan L. Cobb
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Resist requirements in the era of resolution enhancement techniques
Author(s): John S. Petersen; Jeffrey D. Byers
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Evaluation of novel fluorinated resist matrices for 157-nm lithography
Author(s): Francis M. Houlihan; Andrew R. Romano; David Rentkiewicz; Raj Sakamuri; Ralph R. Dammel; Will Conley; Georgia K. Rich; Daniel Miller; Larry F. Rhodes; Joseph M. McDaniels; Chun Chang
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Advances in TFE-based fluoropolymers for 157-nm lithography: a progress report
Author(s): Iqbal Sharif; Darryl DesMarteau; Larry Ford; Gregory John Shafer; Brian Thomas; Will Conley; Paul Zimmerman; Daniel Miller; Guen Su Lee; Charles R. Chambers; Brian C. Trinque; Takashi Chiba; Brian Philip Osborn; C. Grant Willson
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Dry-etching resistance of fluoropolymers for 157-nm single-layer resists
Author(s): Yasuhide Kawaguchi; Jun Irisawa; Shun-ichi Kodama; Shinji Okada; Yoko Takebe; Isamu Kaneko; Osamu Yokokoji; Seiichi Ishikawa; Shigeo Irie; Takuya Hagiwara; Toshiro Itani
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Novel main-chain-fluorinated polymers for 157-nm photoresists
Author(s): Minoru Toriumi; Meiten Koh; Takuji Ishikawa; T. Kodani; Takayuki Araki; Hirokazu Aoyama; Tsuneo Yamashita; Tamio Yamazaki; Takamitsu Furukawa; Toshiro Itani
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Rational design in cyclic olefin resists for sub-100-nm lithography
Author(s): Wenjie Li; Pushkara Rao Varanasi; Margaret C. Lawson; Ranee W. Kwong; Kuang-Jung Chen; Hiroshi Ito; Hoa D. Truong; Robert D. Allen; Masafumi Yamamoto; Eiichi Kobayashi; Mark Slezak
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Hydrogen bonding and aqueous base dissolution behavior of hexafluoroisopropanol-bearing polymers
Author(s): Hiroshi Ito; William D. Hinsberg; Larry F. Rhodes; Chun Chang
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Single-layer fluoropolymer resists for 157-nm lithography
Author(s): Michael K. Crawford; William B Farnham; Andrew E. Feiring; Jerald Feldman; Roger H. French; Kenneth W. Leffew; Viacheslav A. Petrov; Weiming Qiu; Frank L. Schadt; Hoang V Tran; Robert C Wheland; Fredrick C. Zumsteg Jr.
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Dissolution inhibitors for 157-nm photolithography
Author(s): Charles R. Chambers; Shiro Kusumoto; Guen Su Lee; Alok Vasudev; Leonidas Walthal; Brian Philip Osborn; Paul Zimmerman; Will Conley; C. Grant Willson
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Development and characterization of new 157-nm photoresists based on advanced fluorinated polymers
Author(s): Tamio Yamazaki; Takamitsu Furukawa; Toshiro Itani; Takuji Ishikawa; Meiten Koh; Takayuki Araki; Minoru Toriumi; T. Kodani; Hirokazu Aoyama; Tsuneo Yamashita
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F2 resist outgassing studied by in situ QCM technique
Author(s): Masamitsu Shirai; Toyofumi Shinozuka; Masahiro Tsunooka; Seiichi Ishikawa; Toshiro Itani
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Dependence of outgassing characters and total amount of outgassed species at 157-nm exposure on the structures of resist base polymer
Author(s): Yoshinori Matsui; Satoshi Umeda; Shiro Matsui; Shu Seki; Seiichi Tagawa; Seiichi Ishikawa; Toshiro Itani
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New generation of bottom antireflective coatings (BARCs): photodefinable BARCs
Author(s): Douglas J. Guerrero; Tonya Trudgeon
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Highly etch-selective spin-on bottom antireflective coating for use in 193-nm lithography and beyond
Author(s): Dirk Pfeiffer; Arpan P. Mahorowala; Katherina Babich; David R. Medeiros; Karen E. Petrillo; Marie Angelopoulos; Wu-Song Huang; Scott Halle; Colin Brodsky; Scott D. Allen; Steven J. Holmes; Ranee W. Kwong; Robert Lang; Phillip J. Brock
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Anthracene-organosiloxane spin-on antireflective coating for KrF lithography
Author(s): Joseph T. Kennedy; Teri Baldwin-Hendricks; Mello Hebert; Arlene Suedmeyer
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Hardmask technology for sub-100-nm lithographic imaging
Author(s): Katherina Babich; Arpan P. Mahorowala; David R. Medeiros; Dirk Pfeiffer; Karen E. Petrillo; Marie Angelopoulos; Alfred Grill; Vishnubhai Patel; Scott Halle; Timothy A. Brunner; Richard Conti; Scott D. Allen; Richard Wise
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New approach for pattern collapse problem by increasing contact area at sub-100-nm patterning
Author(s): Sung-Koo Lee; Jae Chang Jung; Min Suk Lee; Sung Kwon Lee; Sam Young Kim; Young-Sun Hwang; Cheol Kyu Bok; Seung-Chan Moon; Ki Soo Shin; Sang-Jung Kim
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Development of high-performance negative-tone resists for 193-nm lithography
Author(s): Takashi Hattori; Yoshiyuki Yokoyama; Kaori Kimura; Ryoko Yamanaka; Toshihiko Tanaka; Hiroshi Fukuda
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High-performance 193-nm photoresist materials based on a new class of polymers containing spaced ester functionalities
Author(s): Mahmoud Khojasteh; K. Rex Chen; Ranee W. Kwong; Margaret C. Lawson; Pushkara Rao Varanasi; Kaushal S. Patel; Eiichi Kobayashi
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Impact of thin resist processes on post-etch LER
Author(s): Arpan P. Mahorowala; Dario L. Goldfarb; Karen Temple; Karen E. Petrillo; Dirk Pfeiffer; Katherina Babich; Marie Angelopoulos; Gregg M. Gallatin; Stacy Rasgon; Herbert H. Sawin; Scott D. Allen; Robert N. Lang; Margaret C. Lawson; Ranee W. Kwong; Kuang-Jung Chen; Wenjie Li; Pushkara Rao Varanasi; Martha I. Sanchez; Hiroshi Ito; Gregory M. Wallraff; Robert D. Allen
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Imaging and photochemistry studies of fluoropolymers for 193-nm lithography
Author(s): Will Conley; Paul Zimmerman; Daniel Miller; Guen Su Lee
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Enhanced processing: sub-50-nm features with 0.8-micron DOF using a binary reticle
Author(s): David Van Steenwinckel; Jeroen Lammers
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Line-edge roughness reduction for advanced metal gate etch with 193-nm lithography in a silicon decoupled plasma source etcher (DPSII)
Author(s): Tito Chowdhury; Hanna Bamnolker; Roni Khen; Chan-Lon Yang; Hean-Cheal Lee; Yan Du; Meihua Shen; Jinhan Choi; Shashank Deshmukh
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Comparison of ArF bilayer resists for sub-90-nm L/S fabrication
Author(s): Jin Hong; Hyun-Woo Kim; Sung-Ho Lee; Sang-Gyun Woo; Han-Ku Cho; Woo-Sung Han
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Evaluation of process-based resolution enhancement techniques to extend 193-nm lithography
Author(s): Sripadma Satyanarayana; Chris L. Cohan
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Intel benchmarking and process integration of 157-nm resists
Author(s): James M. Powers; Jeanette M. Roberts; Paul A. Zimmerman; Robert P. Meagley; E. Steve Putna; Uday Shah
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Contact printing to the 45-nm node using a binary mask and 248-nm lithography
Author(s): Karen E. Suhm; Daniel C. Baker; Brian Hesse; Kevin Clark; Scott Coleman
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Will Darwin's law help us to improve our resist models?
Author(s): Bernd Tollkuhn; Tim Fuehner; Daniela Matiut; Andreas Erdmann; Armin Semmler; Bernd Kuechler; Gabriella Kokai
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Monitoring of photo-resist poisoning
Author(s): Julia Simon; Francois Weisbuch; Yves Quere; Olivier Louveau; Christine Bourlot
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Quantum efficiency of PAG decomposition in different polymer matrices at advanced lithographic wavelengths
Author(s): Theodore H. Fedynyshyn; Roger F. Sinta; William A. Mowers; Alberto Cabral
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Measurement of photoacid generation kinetics in photoresist thin films via capacitance techniques
Author(s): Cody M. Berger; Clifford L. Henderson
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Using the critical ionization model for resist development to estimate contrast curves and roughening
Author(s): Frances A. Houle; William D. Hinsberg; Martha I. Sanchez
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X-ray absorption spectroscopy to probe interfacial issues in photolithography
Author(s): Joseph L. Lenhart; Daniel A. Fischer; Sharadha Sambasivan; Eric K. Lin; Ronald L. Jones; Christopher L. Soles; Wen-li Wu; Dario L. Goldfarb; Marie Angelopoulos
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Glass transition temperature studies in thin photoresist films with an interferometric method
Author(s): Dimitra Niakoula; Ioannis Raptis; Vasilios Bellas; Panagiotis Argitis
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Polymer dynamics and diffusive properties in ultrathin photoresist films
Author(s): Christopher L. Soles; Ronald L. Jones; Joseph L. Lenhart; Vivek M. Prabhu; Wen-li Wu; Eric K. Lin; Dario L. Goldfarb; Marie Angelopoulos
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Controlling line-edge rougness to within reasonable limits
Author(s): Jonathan L. Cobb; Shahid Rauf; Aaron Thean; S. Dakshina-Murthy; Tab Stephens; Colita Parker; Richard D. Peters; Vivek Rao
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Effects of processing parameters on line-width roughtness
Author(s): Bryan J. Rice; Heidi B. Cao; Manish Chandhok; Robert P. Meagley
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Ultrathin photoresists for 193-nm lithography
Author(s): Richard D. Peters; Gilles R. Amblard; Jen-Jiang Lee; Todd Guenther
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Polyelectrolyte effects in model photoresist developer solutions: roles of base concentration and added salts
Author(s): Vivek M. Prabhu; Ronald L. Jones; Eric K. Lin; Christopher L. Soles; Wen-li Wu; Dario L. Goldfarb; Marie Angelopoulos
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Diffusion-induced line-edge roughness
Author(s): Michael D. Stewart; Gerard M. Schmid; Dario L. Goldfarb; Marie Angelopoulos; C. Grant Willson
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Enhanced quantitative analysis of resist image contrast upon line-edge roughness (LER)
Author(s): Mike V. Williamson; Andrew R. Neureuther
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Bilayer technology for ArF and F2 lithography: the development of resists to minimize silicon outgassing
Author(s): George G. Barclay; Subbareddy Kanagasabapathy; Gerd Pohlers; Joseph Mattia; Kao Xiong; Sheri L. Ablaza; James F. Cameron; Tony Zampini; Tao Zhang; Shintaro Yamada; Francois Huby; Kenneth Wiley
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Nanocomposite resist for low-voltage electron beam lithography (LVEBL)
Author(s): Mohammad Azam Ali; Kenneth E. Gonsalves; Ankur Agrawal; Augustin Jeyakumar; Clifford L. Henderson
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Polyhedral oligomeric silsesquioxane (POSS) based resist materials for 157-nm lithography
Author(s): Evangelia Tegou; Vassilios Bellas; Evangelos Gogolides; Panagiotis Argitis; Kim R. Dean; David Eon; Gilles Cartry; Christophe Cardinaud
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157-nm bilayer resist: patterning and etching performance
Author(s): Seiro Miyoshi; Takamitsu Furukawa; Etsurou Kawaguchi; Toshiro Itani
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Wavelength invariant Bi/In thermal resist as a Si anisotropic etch masking layer and direct-write photomask material
Author(s): Glenn H. Chapman; Yuqiang Tu; Jun Peng
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Intel's EUV resist development
Author(s): Heidi B. Cao; Jeanette M. Roberts; Janel Dalin; Manish Chandhok; Robert P. Meagley; Eric M. Panning; Melissa K. Shell; Bryan J. Rice
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Surface and line-edge roughness in acid-breakable resin-based positive resist
Author(s): Toshio Sakamizu; Hiroshi Shiraishi
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Hybrid bilayer imaging approach using single-component metal-organic precursors for high-resolution electron beam lithography
Author(s): Augustin Jeyakumar; Clifford L. Henderson; Paul J. Roman Jr.; Seigi Suh
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Nanopatterning of spin-coatable TiO2 resist using an electron beam
Author(s): Mohammad S.M. Saifullah; Mark E. Welland
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Study of resist outgassing by F2 laser irradiation
Author(s): Yasuo Itakura; Youichi Kawasa; Akira Sumitani; Seiichi Ishikawa; Shigeo Irie; Toshiro Itani
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Fluorinated materials for 157-nm lithography
Author(s): Andrew Poss; David Nalewajek; Hari Nair
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Application of reversed pattern transfer process for sub-90-nm technology
Author(s): Koutaro Sho; Tsuyoshi Shibata; Hirokazu Kato; Junko Abe; Yoshinobu Ohnishi; Kazuhiko Urayama
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Fluoropolymer resists for 157-nm lithography
Author(s): Vaishali Raghu Vohra; Xiang-Qian Liu; Katsuji Douki; Christopher Kemper Ober; Will Conley; Paul Zimmerman; Daniel Miller
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Polymers with well-controlled molecular weight for DUV/VUV lithography
Author(s): Ting-Yu Lee; Chao-Ying Yu; Meei-Yu Hsu; Jui-Fa Chang; Bing-Ming Cheng; Hsiao-Chi Lu; Hong-Kai Chen; Hok-Sum Fung
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Evaluation of fluorinated dissolution inhibitors for 157-nm lithography
Author(s): Alyssandrea H. Hamad; Francis M. Houlihan; Larry Seger; Chun Chang; Christopher Kemper Ober
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Design and study of resist materials for 157-nm lithography
Author(s): Shintaro Yamada; Sungseo Cho; Anthony Zampini
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Performances of resists for 157-nm lithography based on monocyclic fluoropolymers
Author(s): Seiichi Ishikawa; Shigeo Irie; Toshiro Itani; Yasuhide Kawaguchi; Osamu Yokokoji; Shun-ichi Kodama
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Synthesis of novel fluorinated norbornene derivatives for 157-nm application
Author(s): Meiten Koh; Takuji Ishikawa; Minoru Toriumi; Takayuki Araki; Tsuneo Yamashita; Hirokazu Aoyama; Tamio Yamazaki; Takamitsu Furukawa; Toshiro Itani
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Dissolution behavior of bis-trifluoromethyl-carbinol-substituted polynorbornenes
Author(s): Trevor Hoskins; Won Jae Chung; Peter J. Ludovice; Clifford L. Henderson; Larry Seger; Larry F. Rhodes; Robert A. Shick
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A HFIPS-based polymer approach for 157-nm single-layer photoresist
Author(s): Shinichi Kanna; Kazuyoshi Mizutani; Shoichiro Yasunami; Yasumasa Kawabe; Shiro Tan; Morio Yagihara; Tadayoshi Kokubo; Sanjay Malik; Stephanie J. Dilocker
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Negative photoresist for 157-nm microlithography: a progress report
Author(s): Will Conley; Brian C. Trinque; Daniel Miller; Stefan Caporale; Brian Philip Osborn; Shiro Kumamoto; Matthew J. Pinnow; Ryan Callahan; Charles R. Chambers; Guen Su Lee; Paul Zimmerman; C. Grant Willson
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Novel materials for 157-nm bilayer resist designs
Author(s): Stephanie J. Dilocker; Sanjay Malik; Binod B. De
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Feasibility study of defects in 157-nm resist process
Author(s): Shinya Wakamizu; Yukio Kiba; Etsurou Kawaguchi; Seiro Miyoshi; Takamitsu Furukawa; Toshiro Itani
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Baking study of fluorinated 157-nm resist
Author(s): Francis M. Houlihan; Raj Sakamuri; Andrew R. Romano; Ralph R. Dammel; Will Conley; Georgia K. Rich; Daniel Miller; Larry F. Rhodes; Joseph M. McDaniels; Chun Chang
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Synthesis of norbornene copolymers with diazo groups and their application as DUV resists
Author(s): Jin-Baek Kim; Kyoung Seon Kim
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Mechanistic understanding of post-etch roughness in 193-nm photoresists
Author(s): Young C. Bae; George G. Barclay; Patrick J. Bolton; Robert J. Kavanagh; Lujia Bu; Tatum Kobayashi; Tim Adams; Nick Pugliano; James W. Thackeray
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Newly developed alternating-copolymer-based silicon-containing resists for sub-100-nm pattern fabrication
Author(s): Jun Hatakeyama; Takanobu Takeda; Takeshi Kinsho; Yoshio Kawai; Toshinobu Ishihara
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Investigation of cyclopolymerization for ArF positive photoresist
Author(s): Youngjoon Lee; Kazuhiko Hashimoto; Hiroaki Fujishima; Ryotaro Hanawa; Yasunori Uetani
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Nonshrinkable photoresists for ArF lithography
Author(s): Jin-Baek Kim; Tae Hwan Oh; Jae-Hak Choi; Jae-Jun Lee
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Negative tone 193-nm photoresists
Author(s): Nick Pugliano; Patrick J. Bolton; Tony Barbieri; Matt King; Michael T. Reilly; William Lawrence; Doris Kang; George G. Barclay
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Methods to achieve sub-100-nm contact hole lithography
Author(s): Tracy K. Lindsay; Robert J. Kavanagh; Gerd Pohlers; Takafumi Kanno; Young C. Bae; George G. Barclay; Subbareddy Kanagasabapathy; Joseph Mattia
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Spatial frequency analysis of line-edge roughness in nine chemically related photoresists
Author(s): William Lawrence
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Ring-opened maleic anhydride and norbornene copolymers (ROMA) have a good character resist flow process for 193-nm resist technology
Author(s): Hyun-Sang Joo; Dong Chul Seo; Chang Min Kim; Young Taek Lim; Seong Duk Cho; Jong Bum Lee; Hyun Pyo Jeon; Joo Hyeon Park; Jae Chang Jung; Ki Soo Shin; Chul Kyu Bok; Seung-Chan Moon
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Overcoat materials for acrylate resists to enhance their resolution
Author(s): Koji Nozaki; Miwa Igarashi; Ei Yano; Hajime Yamamoto; Satoshi Takechi; Isamu Hanyu
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Performance of imide and methide onium PAGs in 193-nm resist formulations
Author(s): Munirathna Padmanaban; Ralph R. Dammel; SangHo Lee; Woo-Kyu Kim; Takanori Kudo; Douglas S. McKenzie; Dalil Rahman
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Investigation of the polymer systems for ArF resists
Author(s): Mitsuharu Yamana; Masumi Hirano; Seiji Nagahara; Kunihiko Kasama; Hideo Hada; Miwa Miyairi; Shinichi Kohno; Takeshi Iwai
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Effects of alkali treatment on ArF resist process
Author(s): Jin-Soo Kim; Jae-Chang Jung; Keun-Kyu Kong; Hyoung-Ryeun Kim; Hyeong-Soo Kim
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Improvement of resist process margin with short develop time process
Author(s): Osamu Tamada; Masakazu Sanada
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Polarity effects of polymer on the 193-nm resist performance
Author(s): Yong-Jun Choi; Jung-woo Kim; Jong-Yong Kim; Yoon-Gil Yim; Jae-Hyun Kim; Jaechang Jung; Myoung-Ja Min; Cheolkyu Bok; Kisoo Shin
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Below 70-nm contact hole pattern with RELACS process on ArF resist
Author(s): Mamoru Terai; Toshiyuki Toyoshima; Takeo Ishibashi; Shinji Tarutani; Kiyohisa Takahashi; Yusuke Takano; Hatsuyuki Tanaka
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PEB sensitivity studies of ArF resist
Author(s): SangHo Lee; Woo-Kyu Kim; Dalil Rahman; Takanori Kudo; Allen Timko; Clement Anyadiegwu; Douglas S. McKenzie; Takashi Kanda; Ralph R. Dammel; Munirathna Padmanaban
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Photoresist reflow for 193-nm low-K1 lithography contacts
Author(s): Patrick K. Montgomery; Kevin Lucas; Kirk J. Strozewski; Lena Zavyalova; Grozdan Grozev; Mario Reybrouck; Plamen Tzviatkov; Mireille Maenhoudt
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Improvement of pattern collapse in sub-100-nm nodes
Author(s): Myoung-Ho Jung; Sung-Ho Lee; Hyun-Woo Kim; Sang-Gyun Woo; Han-Ku Cho; Woo-Sung Han
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Advanced RELACS (resolution enhancment of lithography by assist of chemical shrink) material for 193-nm lithography
Author(s): Sungeun Hong; Yusuke Takano; Takashi Kanda; Takanori Kudo; Munirathna Padmanaban; Hatsuyuki Tanaka; Si-Hyeung Lee; Jung-Hyeon Lee; Sang-Gyun Woo
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Most feasible curing process for ArF resists in device integration aspect
Author(s): Hyun-Woo Kim; Yool Kang; Ju-Hyung Lee; Yun-Sook Chae; Sang-Gyun Woo; Han-Ku Cho; Woo-Sung Han
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What an antishrinkage coating method can surmount among stumbling block of ArF resists
Author(s): Hyung-Do Kim; Si-Hyeung Lee; Sang-Jun Choi; Jung-Hyeon Lee; Han-Ku Cho; Woo-Sung Han; Joo-Tae Moon
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New trilayer resist process using a phenol-capped siloxane-based middle-layer for ArF resist process
Author(s): Akihiko Otoguro; Satoshi Takechi; Takatoshi Deguchi; Isamu Hanyu
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Investigation of 193-nm resist and plasma interactions during an oxide etching process
Author(s): Benedicte P. Mortini; Philippe Spinelli; Francois Leverd; Veronique Dejonghe; Richard Braspenning
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Spin-on bottom antireflective coating defect reduction by proper filter selection and process optimization
Author(s): Nickolas L. Brakensiek; Brian Kidd; Michael Mesawich; Don Stevens Jr.; Barry Gotlinsky
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New materials for 193-nm bottom antireflective coatings
Author(s): Marc Weimer; Vandana Krishnamurthy; Shelly Fowler; Cheryl Nesbit; James B. Claypool
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New materials for 193-nm BARC application
Author(s): Charles J. Neef; Michelle R. Fowler; Michelle Windsor; Cheryl Nesbit
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Developer soluble organic BARCs for KrF lithography
Author(s): Chris Cox; Darron F. Dippel; Craig L. Ghelli; Pasquale Valerio; William J. Simmons; Alice Guerrero
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Novel spin-bowl-compatible wet developable bottom antireflective coating for i-line applications
Author(s): Vandana N. Krishnamurthy; Charles J. Neef; Stephen R. Turner
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Void elimination research in bottom antireflective coatings for dual damascene photolithography
Author(s): Kelly A. Nowak
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Relationship between optical property of pattern image and adhesion of resist pattern
Author(s): Junjiro Sakai; Akihiro Nakae; Atsumi Yamaguchi; Kouichirou Tsujita
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Thin film type 248-nm bottom antireflective coatings
Author(s): Tomoyuki Enomoto; Keisuke Nakayama; Kenichi Mizusawa; Yasuyuki Nakajima; Sangwoong Yoon; Yong-Hoon Kim; Young-Ho Kim; Hoesik Chung; Sang Mun Chon
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New 193-nm bottom antireflective coatings
Author(s): Keisuke Nakayama; Takahiro Kishioka; Shinya Arase; Rikimaru Sakamoto; Yoshiomi Hiroi; Yasuyuki Nakajima
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Organosiloxane-based bottom antireflective coatings for 193-nm lithography
Author(s): Joseph T. Kennedy; Teresa Baldwin-Hendricks; Jason Stuck; Arlene Suedmeyer; Shilpa Thanawala; Kim Do; Nancy E. Iwamoto
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Adaptability and validity of thin organic bottom antireflective coating (BARC) to sub-90-nm patterning in ArF lithography
Author(s): Si-Hyun Kim; Si-Hyeung Lee; Gi-Sung Yeo; Jeong Hyeong Lee; Han-Ku Cho; Woo-Sung Han; Joo-Tae Moon
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193-nm multilayer imaging systems
Author(s): James D. Meador; Doug Holmes; William DiMenna; Mariya I. Nagatkina; Michael D. Rich; Tony D. Flaim; Randy Bennett; Ichiro Kobayashi
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Heat-resistant photoresists based on new imaging technique: reaction development patterning (RDP)
Author(s): Takafumi Fukushima; Toshiyuki Oyama; Masao Tomoi
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Post soft-bake delay effect on CD variation in DUV resist
Author(s): Shu-Fen Tsai; Chih-You Chen; King-Terk Chan; Hann-Yii Gao; Chin-Yu Ku
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Simulation of complex resist pattern collapse with mechanical modeling
Author(s): Hyung-Joo Lee; Jun-Taek Park; Yeong-Keun Kwon; Hye-Keun Oh
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Equilibrium sorption and rate of diffusion of water into photoresist thin films
Author(s): Cody M. Berger; Clifford L. Henderson
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Modifications to thermophysical behavior in ultrathin polymer films
Author(s): James N. D'Amour; Curtis W. Frank; Uzodinma Okoroanyanwu
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Influence of film thickness, molecular weight, and substrate on the physical properties of photoresist polymer thin films
Author(s): Lovejeet Singh; Peter J. Ludovice; Clifford L. Henderson
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Investigation of surface inhibition and its effects on the lithographic performance of polysulfone-novolac electron beam resists
Author(s): Ankur Agrawal; Clifford L. Henderson
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Deprotection volume characteristics and line-edge morphology in chemically amplified resists
Author(s): Ronald L. Jones; Tengjiao Hu; Vivek M. Prabhu; Christopher L. Soles; Eric K. Lin; Wen-li Wu; Dario L. Goldfarb; Marie Angelopoulos; Brian Trinque; C. Grant Willson
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Improving chemically amplified resist modeling for 2D layout patterns
Author(s): Lei Yuan; Andrew R. Neureuther
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Investigation on the role of residual casting solvent in photolithographic behavior in 193-nm resists
Author(s): Jae-Hyun Kang; Seung-Keun Oh; Eun-Kyung Son; Jung-Woo Kim; Yun-Hyi Kim; Yong-Jun Choi; Deog-Bae Kim; Jaehyun Kim
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Fundamental study of photoresist dissolution with real-time spectroscopic ellipsometry and interferometry
Author(s): Sean D. Burns; Gerard M. Schmid; Brian C. Trinque; James Willson; Jennifer Wunderlich; Pavlos C. Tsiartas; James Chris Taylor; Ryan L Burns; C. Grant Wilson
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Does line-edge roughness matter?: FEOL and BEOL perspectives
Author(s): Qinghuang Lin; Charles T. Black; Christophe Detavernier; Lynne Gignac; Kathryn Guarini; Brian Herbst; Hyungjun Kim; Philip Oldiges; Karen E. Petrillo; Martha I. Sanchez
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PEB model with cross-diffusion
Author(s): Yuri Granik
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Extraction of exposure parameters by using neural networks
Author(s): Kyoung-Ah Jeon; Hyoung-Hee Kim; Ji-Yong Yoo; Jun-Taek Park; Hye-Keun Oh
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A simple optical system parameter optimization method by comparing the critical dimension
Author(s): Mi-Ae Ha; Dong-Soo Sohn; Kyoung-Ah Jun; Ji-Yong Yoo; Hye-Keun Oh; Jaesoon Kim; In-Ho Park
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Practical extracting method of PEB parameters by using rotating compensator spectroscopic ellipsometer
Author(s): Hyoung-Hee Kim; Young-Keun Kwon; Seung-Wook Park; Kyung-Yoon Bang; Ilsin An; Kun-Sang Lee; Hye-Keun Oh
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New models for the simulation of post-exposure bake of chemically amplified resists
Author(s): Daniela Matiut; Andreas Erdmann; Bernd Tollkuehn; Armin Semmler
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Modeling soft-bake effects in chemically amplified resists
Author(s): Jeff D. Byers; Mark D. Smith; Chris A. Mack; John J. Biafore
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A novel photoacid generator for chemically amplified resists with ArF exposure
Author(s): Toshikage Asakura; Hitoshi Yamato; Akira Matsumoto; Peter Murer; Masaki Ohwa
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Synthesis and evaluation of novel organoelement resists for EUV lithography
Author(s): Junyan Dai; Christopher Kemper Ober; Sang-Ouk Kim; Paul F. Nealey; Victoria Golovkina; Jangho Shin; Lin Wang; Franco Cerrina
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High-sensitivity nanocomposite resist materials for x-ray and EUV lithography
Author(s): Mohammad Azam Ali; Kenneth E. Gonsalves; N. Batina; Victoria Golovkina; Franco Cerrina
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Negative resist image by dry etching as a novel top surface imaging process for ion-beam lithography
Author(s): Khalil I. Arshak; Miroslav Mihov; Arousian Arshak; Declan McDonagh; David Sutton; Simon Newcomb
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A comparative study between organic and inorganic resists in electron beam lithography using Monte Carlo simulations
Author(s): Augustin Jeyakumar; Clifford L. Henderson
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Novel silicon-containing polymers as photoresist materials for EUV lithography
Author(s): Young-Je Kwark; Juan-Pablo Bravo-Vasquez; Christopher Kemper Ober; Heidi B. Cao; Hai Deng; Robert P. Meagley
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Molecular weight effect on line-edge roughness
Author(s): Toru Yamaguchi; Kenji Yamazaki; Hideo Namatsu
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Novel laser ablation patterning with organic thin film in running water
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