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PROCEEDINGS VOLUME 5038

Metrology, Inspection, and Process Control for Microlithography XVII
Editor(s): Daniel J. Herr
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Volume Details

Volume Number: 5038
Date Published: 2 June 2003
Softcover: 129 papers (1296) pages
ISBN: 9780819448439

Table of Contents
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Demonstration of imaging interferometric microscopy (IIM)
Author(s): Christian J. Schwarz; Yuliya Kuznetsova; Steven R. J. Brueck
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New laboratory EUV reflectometer for large optics using a laser plasma source
Author(s): Ludwig van Loyen; Thomas Boettger; Stefan Braun; Hermann Mai; Andreas Leson; Frank Scholze; Johannes Tuemmler; Gerhard Ulm; Herbert Legall; Peter Viktor Nickles; Wolfgang Sandner; Holger Stiel; Christian E. Rempel; Mirko Schulze; Joerg Brutscher; Fritz Macco; Stefan Muellender
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Identification and quantitative analysis of contaminants found in photolithography purge gases
Author(s): Allan Tram; Jeff J. Spiegelman; Russell J. Holmes; Daniel Alvarez; Dan Lev
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Application of simulation-based defect printability analysis for mask qualification control
Author(s): Jerry Lu; Alex Lu; Linyong Pang; Don Lee; Jiunn-Hung Chen
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Concept of ultra-fast at-wavelength inspection of defects on a multilayer mask using a laser-produced plasma source
Author(s): Toshihisa Tomie; Tsuneo Terasawa; Yoshihiro Tezuka; Masaaki Ito
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Comparison of pattern placement errors as measured using traditional overlay targets and design rule structures
Author(s): Philippe Leray; David W. Laidler; Ivan K.A. Pollentier
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Overlay metrology simulations: analytical and experimental validations
Author(s): Joel L. Seligson; Boris Golovanevsky; Jorge M. Poplawski; Michael E. Adel; Richard M. Silver
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An improved method to determine optimal alignment sampling layouts
Author(s): Simon Chang; Stephen J. DeMoor; Jay M. Brown; Chris Atkinson; Joshua A. Roberge
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Evaluation of alignment target designs for Cu and low-K dual damascene processes
Author(s): Moitreyee Mukherjee-Roy; Navab Singh; Sohan Singh Mehta; Wai Meng Chik; Chin Tiong Sim; Francis Cheong
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Calibration strategies for overlay and registration metrology
Author(s): Richard M. Silver; Michael T. Stocker; Ravikiran Attota; Michael Bishop; Jau-Shi Jay Jun; Egon Marx; Mark P. Davidson; Robert D. Larrabee
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Overlay considerations for 300-mm lithography
Author(s): Tobias Mono; Uwe Paul Schroeder; Dieter Nees; Katrin Palitzsch; Wolfram Koestler; Jens Bruch; Sirko Kramp; Markus Veldkamp; Ralf Schuster
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Simulation study of repeatability and bias in the CD-SEM
Author(s): John S. Villarrubia; Andras E. Vladar; Michael T. Postek
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Implementation of reference measurement system using CD-AFM
Author(s): Ronald G. Dixson; Angela Guerry; Marylyn Hoy Bennett; Theodore V. Vorburger; Benjamin D. Bunday
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Characterization of charging in CD-SEM for 90-nm metrology and beyond
Author(s): Li-Jui Chen; Shang-Wei Lin; Tsai-Sheng Gau; Burn Jeng Lin
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Aerial image-based mask inspection: a development effort to detect what might impact printing image quality on wafers
Author(s): Roman Liebe; Henning Haffner; Shirley Hemar; Anja Rosenbusch; Jerry Xiaoming Chen; Franklin D. Kalk
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FTIR based nondestructive method for metrology of depths in poly silicon-filled trenches
Author(s): Shoaib Hasan Zaidi; George Stojakovic; Alois Gutmann; Cornel Bozdog; Ulrich Mantz; Sylvie Bosch Charpenay; Peter A. Rosenthal
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Subnanometer wavelength metrology of lithographically prepared structures: a comparison of neutron and X-ray scattering
Author(s): Ronald L. Jones; Tengjiao Hu; Eric K. Lin; Wen-li Wu; Diego M. Casa; N. George Orji; Theodore V. Vorburger; Patrick J. Bolton; George G. Barclay
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Novel diffraction-based spectroscopic method for overlay metrology
Author(s): Weidong Yang; Roger Lowe-Webb; Silvio Rabello; Jiangtao Hu; Je-Yi Lin; John D. Heaton; Mircea V. Dusa; Arie J. den Boef; Maurits van der Schaar; Adolph Hunter
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UV scatterometry
Author(s): Petre Catalin Logofatu
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Improved gate process control at the 130-nm node using spectroscopic-ellipsometry-based profile metrology
Author(s): J. Scott Hodges; Yu-Lun Chris Lin; Dale R. Burrows; Ray H. Chiao; Robert M. Peters; Srinivasan Rangarajan; Kamal N. Bhatia; Suresh Lakkapragada
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Scatterometry measurement precision and accuracy below 70 nm
Author(s): Matthew Sendelbach; Charles N. Archie
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Run-to-run CD error analysis and control with monitoring of effective dose and focus
Author(s): Masafumi Asano; Tadahito Fujisawa; Kyoko Izuha; Soichi Inoue
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Simultaneous dose and focus monitoring on product wafers
Author(s): Brad J. Eichelberger; Berta Dinu; H. Pedut
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Enhancing yield and productivity with process control applications for contact and via module
Author(s): Stefan Majoni; Ilan Englard
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Spectroscopic ellipsometry for lithography front-end level CD control: a complete analysis for production integration
Author(s): David Herisson; DaniEle Neira; Cyril Fernand; Philippe Thony; Daniel Henry; Stephanie Kremer; Marco Polli; Marco Guevremont; Assim Elazami
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Spectroscopic Ellipsometry based Scatterometry enabling 193nm Litho and Etch process control for the 110nm technology node and beyond
Author(s): Thomas Hingst; Thomas Marschner; Manfred Moert; Jan Homilius; Marco Guevremont; John Hopkins; Assim Elazami
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Challenges of image placement and overlay at the 90-nm and 65-nm nodes
Author(s): Walter J. Trybula
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Simulation of repairing thin-film phase defect in masks for EUV lithography
Author(s): Yeong-Uk Ko; David C. Joy; Scott Daniel Hector; Bing Lu
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Optimizing reticle inspection for the X architecture
Author(s): Christopher M. Aquino
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Potentials for high pressure/environmental SEM microscopy for photomask dimensional metrology
Author(s): Michael T. Postek; Andras E. Vladar; Trisha M. Rice; Ralph Knowles
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A new methodology to specify via and contact layer reticles for maximizing process latitude
Author(s): Kirk J. Strozewski; Joe Perez; Anthony Vacca; Arthur D. Klaum; Keith J. Brankner
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Updated NIST photomask linewidth standard
Author(s): James E. Potzick; J. Marc Pedulla; Michael T. Stocker
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Electrical linewidth metrology for systematic CD variation characterization and causal analysis
Author(s): Jason P. Cain; Costas J. Spanos
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Implementation and benefits of advanced process control for lithography CD and overlay
Author(s): Lena Zavyalova; Chong-Cheng Fu; Gary Stanley Seligman; Perry A. Tapp; Victor Pol
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Lithography and metrology overlay troubleshooting by advanced query and multivariate analysis
Author(s): Bernd Schulz; Jens Krause; John Charles Robinson; Craig W. MacNaughton
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Quantitative profile-shape measurement study on a CD-SEM with application to etch-bias control and several different CMOS features
Author(s): Benjamin D. Bunday; Michael Bishop; John R. Swyers; Kevin R. Lensing
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Improved model for focus-exposure data analysis
Author(s): Chris A. Mack; Jeff D. Byers
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CD control at low K1 optical lithography in DRAM device
Author(s): Jongkyun Hong; Chongsik Woo; Jaewoo Park; Byeong-ho Cho; Jaeseung Choi; Hyunjo Yang; Chan-ha Park; Yong-chul Shin; Youngdea Kim; Goomin Jeong; Jung-chan Kim; Khil-ohk Kang; Chunsoo Kang; Jongwoon Park; Donggyu Yim; Youngwook Song
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Optimization of align marks and overlay targets in VIA first dual damascene process
Author(s): Dae-Ung Shin; Young-Bae Jeong; Jeong-Lyeol Park; Jae-Sung Choi; Jeong-Gun Lee; Dae-Hoon Lee
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New method to enhance overlay tool performance
Author(s): Ravikiran Attota; Richard M. Silver; Michael T. Stocker; Egon Marx; Jau-Shi Jay Jun; Mark P. Davidson; Robert D. Larrabee
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Characterization of overlay mark fidelity
Author(s): Mike Adel; Mark Ghinovker; Jorge M. Poplawski; Elyakim Kassel; Pavel Izikson; Ivan K.A. Pollentier; Philippe Leray; David W. Laidler
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Performance study of new segmented overlay marks for advanced wafer processing
Author(s): Mike Adel; John A. Allgair; David C. Benoit; Mark Ghinovker; Elyakim Kassel; C. Nelson; John Charles Robinson; Gary Stanley Seligman
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Characterization of photoresist spatial resolution by interferometric lithography
Author(s): John A. Hoffnagle; William D. Hinsberg; Frances A. Houle; Martha I. Sanchez
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Calibration and validation of projection lithography in chemically amplified resist systems using fluorescence imaging
Author(s): Michael D. Mason; Krishanu Ray; Gilbert D. Feke; Robert D. Grober; Gerd Pohlers; James F. Cameron
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Electron beam metrology of 193-nm resists at ultralow voltage
Author(s): Neal T. Sullivan; Ron Dixson; Benjamin D. Bunday; Martin E. Mastovich; Paul C. Knutrud; Pascal Fabre; Robert Brandom
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Making carbon nanotube probes for high aspect ratio scanning probe metrology
Author(s): Yusuf N. Emirov; M. Beerbom; Deron A. Walters; Z. F. Ren; Z. P. Huang; Benjamin B. Rossie; Rudy Schlaf
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Real-time optical CD metrology for litho process
Author(s): Jon L. Opsal; Youxian Wen; Joungchel Lee; Walter Lee Smith
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New way of handling dimensional measurement results for integrated circuit technology
Author(s): Andras E. Vladar; John S. Villarrubia; Michael T. Postek
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Characterizing and understanding stray tilt: the next major contributor to CD-SEM tool matching
Author(s): Eric P. Solecky; Charles N. Archie; Jason Mayer; Roger S. Cornell; Ofer Adan
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Nanoprecision AFM imaging by stereo deconvolution: theory, applications, and experimental validation
Author(s): Bernardo D. Aumond; Kamal Youcef-Toumi
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New method for the quantitative evaluation of wafer pattern shape based on CAD data
Author(s): Ryoichi Matsuoka; Masanori Takahashi; Atsushi Uemoto
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Accuracy limitations in specular-mode optical topography extraction
Author(s): Fred Lewis Terry
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Scatterometry as a practical in-situ metrology technology
Author(s): Eytan Barouch; Stephen L. Knodle
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Application of scatterometry for CD and profile metrology in 193-nm lithography process development
Author(s): Li-Jui Chen; Chih-Ming Ke; Shinn Sheng Yu; Tsai-Sheng Gau; Pei-Hung Chen; Yao Ching Ku; Burn Jeng Lin; Dan Engelhard; Dave Hetzer; Jason Y.H. Yang; Kelly A. Barry; Lip Yap; Wenge Yang
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Applications of angular scatterometry for the measurement of multiply periodic features
Author(s): Christopher J. Raymond; Michael E. Littau; Byoungjoo James Youn; Chang-Jin Sohn; Jin Ah Kim; Young Seog Kang
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Critical dimension metrology for sub-150-nm lithographic films using real-time scatterometry
Author(s): Michael J. Anderson
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Contact hole inspection by real-time optical CD metrology
Author(s): Jon L. Opsal; Hanyou Chu; Youxian Wen; Guangwei Li; Yia-Chung Chang
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193-nm resist: ultralow voltage CD-SEM performance for sub-130-nm contact hole process
Author(s): John E. Ferri; Marco Vieira; Mario Reybrouck; Martin E. Mastovich; Scott Bowdoin; Robert Brandom; Paul C. Knutrud
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CD-SEM image acquisition effects on 193-nm resist line slimming
Author(s): Neal T. Sullivan; Martin E. Mastovich; Scott Bowdoin; Robert Brandom
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Cross-sectional gate feature identification method using top-down SEM images
Author(s): Maki Tanaka; Chie Shishido; Yuji Takagi; Hidetoshi Morokuma; Osamu Komuro; Hiroyoshi Mori
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New atomic force microscope method for critical dimension metrology
Author(s): Takafumi Morimoto; Toru Shinaki; Yukio Kembo; Sumio Hosaka
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Effect of bias variation on total uncertainty of CD measurements
Author(s): Vladimir A. Ukraintsev
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Accuracy in CD-SEM metrology
Author(s): Arkady V. Nikitin; Albert Sicignano; Dmitriy Y. Yeremin; Matthew Sandy; E. Tim Goldburt
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Top-down versus cross-sectional SEM metrology and its impact on lithography simulation calibration
Author(s): Robert L. Jones; Jeff D. Byers; Will Conley
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CD-SEM measurement line-edge roughness test patterns for 193-nm lithography
Author(s): Benjamin D. Bunday; Michael Bishop; John S. Villarrubia; Andras E. Vladar
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Characterization of line-edge roughness in resist patterns and estimations of its effect on device performance
Author(s): Atsuko Yamaguchi; Ryuta Tsuchiya; Hiroshi Fukuda; Osamu Komuro; Hiroki Kawada; Takashi Iizumi
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New apparent beam width artifact and measurement methodology for CD-SEM resolution monitoring
Author(s): Jason A. Mayer; Kylee J. Huizenga; Eric P. Solecky; Charles N. Archie; G. W. Banke; Robert M. Cogley; Claudine Nathan; James M. Robert
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NIST-traceable calibration of CD-SEM magnification using a 100-nm pitch standard
Author(s): Marco Tortonese; Yu Guan; Jerry Prochazka
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Microscope illumination systems for 157 nm
Author(s): Alexander Pesch; Kristina Uhlendorf; Arnaud Deparnay; Lars Erdmann; Peter Kuschnerus; Thomas Engel; Robert Brunner
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Portable phase measuring interferometer using Shack-Hartmann method
Author(s): Toru Fujii; Jun Kougo; Yasushi Mizuno; Hiroshi Ooki; Masato Hamatani
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Image stepper: high-resolution image processing using distributed computing
Author(s): Volker Tympel; Roberto Witt; Shannon Layland
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Protecting reticles from contamination using SMIF technologies
Author(s): Sheng-Bai Zhu
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Resist and silicon trench array line width measurement simulations for the next-generation semiconductor circuits by optical scattering properties using the FDTD method
Author(s): Hirokimi Shirasaki; Kunio Ueta; Noriyuki Kondou
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First review of a suitable metrology framework for the 65-nm technology node
Author(s): Ermes Severgnini; Mauro Vasconi; David Herisson; Philippe Thony
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Total process control of alignment and overlay for metal layer
Author(s): Wenzhan Zhou; ZhiQiang Li; Luke Kok Chin Ng; Teng Hwee Ng; Hui Kow Lim
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Simulation study of process control by multistructure CD measurement
Author(s): Wenzhan Zhou; Luke Kok Chin Ng; Carol Yap
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Benchmarking of current generation overlay systems at the 130-nm technology node
Author(s): Beth Russo; Michael Bishop
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Measurement of the dielectric function spectra of low dielectric constant using spectroscopic ellipsometry
Author(s): Masahiro Horie; Kamil Postava; Tomuo Yamaguchi; Kumiko Akashika; Hideki Hayashi; Fujikazu Kitamura
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Investigation of model OPC optimization based on CD uniformity yield
Author(s): Sabita Roy; J. Fung Chen; Armin Liebchen; Thomas L. Laidig; Kurt E. Wampler; Uwe Hollerbach
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Optimization of developing uniformity by resist thickness measurement
Author(s): Wenzhan Zhou; Luke Kok Chin Ng; Carol Yap
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Resist compacting under SEM E-Beam
Author(s): Yiming Gu; Dyiann Chou; John L. Sturtevant
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Single wafer process to generate reliable swing curves
Author(s): Yiming Gu; Cynthia Zhu; John L. Sturtevant
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Use of rotating compensator spectroscopic ellipsometry for monitoring the photoresist etching on Si wafer
Author(s): Yong-Seok Choi; Yun-Hwan Kim; Gon-Ho Kim; Hye-Keun Oh; Ilsin An
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New method to reduce alignment error by optical system
Author(s): Tadashi Nagayama; Shinichi Nakajima; Ayako Sugaya; Yuho Kanaya; Ayako Sukegawa
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Zero-shrink dimension evaluated for ArF-resist patterns measured by CD-SEM
Author(s): Hiroki Kawada; Takashi Iizumi; Tadashi Otaka
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Design and development of a novel actinic inspection tool for EUV multilayer-coated mask blanks
Author(s): Yoshihiro Tezuka; Masaaki Ito; Tsuneo Terasawa; Toshihisa Tomie
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CMP and self-shadowing effect of overlay mark in metal sputtering process
Author(s): Se-Jin Park; Hong-Rae Kim; Yong-Suk Lee; Won-Sik Yang
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Characterization of transparent quarter micron lines by spectral measurements with visible light
Author(s): Peter Triebel; Peter Weissbrodt; Stefan Nolte; Andreas Tuennermann
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Characterization of 193-nm resist layers by CD-SEM sidewall imaging
Author(s): Thomas Marschner; Christian Stief
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Photoresist line-edge roughness analysis using scaling concepts
Author(s): Vasilios Constantoudis; George P. Patsis; Evangelos Gogolides
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Practical DUV lithography for the optoelectronics market
Author(s): Paul D. Harris; Martin McCallum; David Muir; Gordon Hughes; Stuart Pinkney
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Overlay performance with advanced ATHENA alignment strategies
Author(s): Jeroen Huijbregste; Richard J. F. van Haren; Andre Jeunink; Paul C. Hinnen; Bart Swinnen; Ramon Navarro; Geert Simons; Frank van Bilsen; Hoite Tolsma; Henry J. L. Megens
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CD uniformity control using aerial image-based mask inspection
Author(s): Shirley Hemar; Anja Rosenbusch; Reuven Falah
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Atomic force microscopy of steep side-walled feature with carbon nanotube tip
Author(s): Byong Chon Park; Jae-Hyun Kang; Ki Young Jung; Won Young Song; Beomhoan O; TaeBong Eom
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Soft electron beam etching for precision TEM sample preparation
Author(s): Philip D. Rack; Alexander Thesen; Stephen Randolph; Jason D. Fowlkes; David C. Joy
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Pattern shape comparison methods using SEM image
Author(s): Takahiro Ikeda; Toshiya Kotani; Takashi Sato; Kusuo Ueno; Ryoichi Matsuoka
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Quantifying drift in SEM
Author(s): Albert Sicignano; Dmitriy Y. Yeremin; Matthew Sandy; E. Tim Goldburt
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Evaluation of i-line Nikon Stepper leveling methods for improved CD control
Author(s): Ronan Barry; James Thompson
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Equipment log analysis to improve photolithography cluster productivity
Author(s): Holly H. Magoon; Shawn R. Goddard; Alois Kaufmann
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Measurement correlation and tool matching of multiple CD-SEMs
Author(s): Justin J. Hwu; Sukhbir S. Dulay; Thao Pham
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Effect of overlay APC control on cascading levels: perturbations of the reference level
Author(s): Timothy H. Conway; Manish Misra; Alan P. Carlson; David A. Crow
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Development of a polymer etch rate monitor: design, characterization, and application
Author(s): Heping Wang; Terry Toddy; Stephen Gibbons; Trisha May
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Use of silicon-versus-layout verification (SiVL) in process control of wafer lithography and mask-making metrology
Author(s): Paul J. M. van Adrichem; Frank A. J. M. Driessen; Kees van Hasselt
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Monitoring the dissolution rate of photoresist thin films via multiwavelength interferometry
Author(s): Ankur Agrawal; Clifford L. Henderson
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Specifications and methodologies for benchmarking of advanced CD-SEMs at the 90-nm CMOS technology node and beyond
Author(s): Benjamin D. Bunday; Michael Bishop
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Cr and MoSi photomask plasma etching
Author(s): Banqiu Wu; David Y. Chan
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Scatterometry-based overlay metrology
Author(s): Hsu-Ting Huang; Gayathri Raghavendra; Apo Sezginer; Kenneth Johnson; Fred E. Stanke; Michelle L. Zimmerman; Cristina Cheung; Makoto Miyagi; Bhanwar Singh
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Gate etch process control
Author(s): Ole Krogh; Mark Freeland; Ron Mori; Tito Chowdhury
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Dose and focus estimation using top-down SEM images
Author(s): Chie Shishido; Ryo Nakagaki; Maki Tanaka; Yuji Takagi; Hidetoshi Morokuma; Osamu Komuro; Hiroyoshi Mori
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Optical digital profilometry applications on contact holes
Author(s): Joerg Bischoff; Xinhui Niu; Nickhil H. Jakatdar
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Three-dimensional measurement by tilting and moving objective lens in CD-SEM
Author(s): Kouji Kimura; Kazuo Abe; Yasuko Tsuruga; Hitoshi Suzuki; Nobuo Kochi; Hirotami Koike; Yuuichiro Yamazaki
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Process improvements of applying 193-nm lithography to 90-nm logic implant layer
Author(s): D.C. OweYang; Harrison Chen; R.M. Deng; Bang-Ching Ho
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Analysis of total CD uniformity at sub-100-nm DRAM patterning by using KrF lithography
Author(s): Young-Sik Kim; Tae Jun You; Jin-Soo Kim; Seok-Kyun Kim; Keun-Kyu Kong; Young-Deuk Kim; HyeongSoo Kim
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Yield improvement due to edge shot parameter optimization
Author(s): Owen Joyce; James Thompson; Shane Geary
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Designing a reference for CD-SEM magnification calibration
Author(s): Albert Sicignano; Arkady V. Nikitin; Dmitriy Y. Yeremin; Matthew Sandy; E. Tim Goldburt
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Line-edge roughness reduction and CD slimming using hardbake processing
Author(s): Richard D. Peters; Kevin Lucas; Jonathan L. Cobb; Colita Parker; Kyle Patterson; Robb McCauley; Monique Ercken; Frieda Van Roey; Nadia Vandenbroeck; Ivan K.A. Pollentier
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Copy result exactly using EB-SCOPE technology
Author(s): Keizo Yamada; Takeo Ushiki; Yousuke Itagaki; Robert Newcomb
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Implementation of high-resolution reticle inspection in wafer fabs
Author(s): Aditya Dayal; Nathan M. Bergmann; Peter Sanchez
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Rotation-induced measurement error by a CD-SEM
Author(s): Tejas K. Jhaveri; Rand Cottle
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Determination of lithography process control metrics by spectroscopic scatterometry
Author(s): Eric B Maiken; G. Raghavendra; Carmen Morales; Bryan Choo
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New sensing wafer technique for artifact-free transient temperature measurements in PEB processes
Author(s): Mei H. Sun; Barney M Cohen; Farhat Quli; Wayne G. Renken
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Overlay excursion management through sample plan optimization and cycle time reduction
Author(s): Xuemei Chen; Ming-Yeon Hung; Kelly Kuo; Steven Fu; Geoge Shanthikumar; Zhoujie Mao; Shiming Deng; Viral Hazari; Kevin M. Monahan; Mike D. Slessor; Amir Lev
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Metrology of inkjet MEMS devices
Author(s): Roger McKay; Susan Redmond; Ron Weller; Kuni Yamamoto; Ganesh Sundaram
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Web-based metrology performance diagnostics
Author(s): Ganesh Sundaram; Martin E. Mastovich; Roye Avidor; Jason Remillard; Robert Brandom
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Evaluation of alignment marks using ASML ATHENA alignment system in 90-nm BEOL process
Author(s): Chin-Boon Tan; Swee-Hock Yeo; Hui Peng Koh; Chee Kiong Koo; Yee Mei Foong; Yong Kong Siew
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Method for rapid screening of photoresist strippers for acceptance in DUV lithographic areas
Author(s): John C. Moore; Shankar C. Acharya
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Energy flux method for inspection of contact and VIA layer reticles
Author(s): Hector I. Garcia; William Waters Volk; Yalin Xiong; Sterling G. Watson; Zongchang Yu; Zhian Guo; Lantian Wang
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New criterion about the topography of W-CMP wafer's alignment mark
Author(s): Hideki Ina; Takahiro Matsumoto; Koichi Sentoku; Katsuhiro Matsuyama; Kazuhiko Katagiri
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Faster qualification of 193-nm resists for 100-nm development using photo cell monitoring
Author(s): Chris M Jones; Chidam Kallingal; Mary T. Zawadzki; Nazneen N. Jeewakhan; Nazila N. Kaviani; Prakash Krishnan; Arthur D. Klaum; Joel Van Ess
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