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Proceedings of SPIE Volume 5023

10th International Symposium on Nanostructures: Physics and Technology
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Volume Details

Volume Number: 5023
Date Published: 11 June 2003
Softcover: 147 papers (610) pages
ISBN: 9780819448248

Table of Contents
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Control of charge and spin in novel semiconductor nanostructure devices
Author(s): Gerhard Abstreiter
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Limits of 3D nanostructures fabricated by focused electron beam (FEB) induced deposition
Author(s): P. Hoffmann; I. Utke; F. Cicoira
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Monte Carlo simulation of self-organized quantum dot structures: crossover from kinetics to thermodynamics
Author(s): M. Meixner; R. Kunert; E. Schoell; Vitaly A. Shchukin; Dieter Bimberg
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Room-temperature electroluminescence at 1.55 um from InAs quantum dots grown on (001) InP by droplet hetero-epitaxy
Author(s): R. Oga; W. S. Lee; Y. Fujiwara; Y. Takeda
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Growth and structural characterization of ZnF2 epitaxial layers on Si
Author(s): A. G. Banshchikov; N. F. Kartenko; A. K. Kaveev; M. M. Moisseeva; Nikolai S. Sokolov
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Nanostructures in porous substrate for mismatched film technology and lateral growth model
Author(s): A. V. Bobyl; S. G. Konnikov; D. V. Shantsev; A. A. Sitnikova; Robert A. Suris; V. P. Ulin
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2D-3D growth mode transition through Stranski-Krastanov mode during epitaxial growth
Author(s): D. V. Brunev; A. N. Karpov; I. G. Neizvestny; Natalia L. Shwartz; Zoja Sh. Yanovitskaya
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Pore sealing during epitaxy and annealing on Si(001) surface
Author(s): A. V. Chemakin; I. G. Neizvestny; Natalia L. Shwartz; Zoja Sh. Yanovitskaya; Alexej V. Zverev
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The impact of charge state on catalytic activity of metallic nanostructures
Author(s): V. M. Kozhevin; D. A. Yavsin; M. A. Zabelin; Serguei A. Gurevich; Irina N. Yassievich; T. N. Rostovshichikova; V. V. Smirnov
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The carriers localization influence on the optical properties of GaAsN/GaAs heterostructures grown by molecular-beam epitaxy
Author(s): N. V. Kryzhanovskaya; A. G. Gladyshev; D. S. Sizov; Alexey R. Kovsh; Anrei F. Tsatsul'nikov; Jim Y. Chi; Jyh-Shyang Wang; Li-Chung Wei; Victor M. Ustinov
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Influence of ZnSe cap layer growth on the morphology and Cd distribution in CdSe/ZnSe quantum dot structures
Author(s): D. Litvinov; A. Rosenauer; D. Gerthsen; P. Kratzert; Michael Rabe; Fritz Henneberger
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Variation of in-plane lattices constant of Ge islands during MBE growth on Si and SiO2 surfaces
Author(s): Alexander I. Nikiforov; V. A. Cherepanov; Oleg P. Pchelyakov
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High-mobility InAs/AlSb heterostructures for spintronics applications
Author(s): Yuri G. Sadofyev; Y. Cao; S. Chaparro; A. Ramamoorthy; B. Naser; J. P. Bird; S. R. Johnson; Y.-H. Zhang
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Investigation of the formation of InAs QDs in a AlGaAs matrix
Author(s): D. S. Sizov; N. V. Kryzhanovskaya; A. G. Gladyshev; Yu B. Samsonenko; G. E. Cirlin; N. K. Polyakov; V. A. Egorov; A. A. Tonkih; Yu G. Musikhin; Anrei F. Tsatsul'nikov; N. N. Ledentsov; Victor M. Ustinov
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Surface morphology evolution at early stages of CaF2(110) epitaxial growth on Si(001)
Author(s): Nikolai S. Sokolov; S. M. Suturin; V. P. Ulin
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Formation specifity of InAs/GaAs submonolayer superlattice
Author(s): Ilja P. Soshnikov; Boris V. Volovik; Alexey R. Kovsh; Alexey E. Zhukov; Anrei F. Tsatsul'nikov; O. M. Gorbenko; N. N. Ledentsov; Victor M. Ustinov; P. Werner; N. D. Zakharov; D. Gerthsen
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Optical properties of InGaN/GaN and AlGaN/GaN multiple quantum well structures
Author(s): Bo Monemar; Plamen P. Paskov; H. Haratizadeh; Galina R. Pozina; J. P. Bergman; Satoshi Kamiyama; Motoaki Iwaya; Hiroshi Amano; Isamu Akasaki
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Band gap of hexagonal InN and InGaN alloys
Author(s): V. Yu. Davydov; A. A. Klochikhin; Vadim V. Emtsev; A. V. Sakharov; S. V. Ivanov; V. A. Vekshin; Friedhelm Bechstedt; J. Furthmueller; Jochen Aderhold; Jurgen Graul; A. V. Mudryi; H. Harima; A. Hashimoto; A. Yamamoto; J. Wu; Henning Feick; Eugene E. Haller
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Production scale MOVPE reactors for electronic and optoelectronic applications
Author(s): Harry Protzmann; Georg Gerstenbrandt; Assadullah Alam; Oliver Schoen; Markus Luenenbuerger; Yilmaz Dikme; Holger Kalisch; Rolf H. Jansen; Michael Heuken
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High-efficient up-conversion of photoluminescence in CdSe/ZnSe nanostructures
Author(s): V. V. Strelchuk; Mikhail Ya. Valakh; M. V. Vuychik; S. V. Ivanov; Petr S. Kop'ev; T. V. Shubina
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Photoluminescence study of CdTe/ZnTe ultra-thin quantum wells grown by pulsed beam epitaxy
Author(s): M. Garcia-Rocha; Isaac Hernandez-Calderon
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Filling-factor dependence of magneto-luminescence in II-VI QWs with 2DEG
Author(s): A. S. Gurevich; G. V. Astakhov; Robert A. Suris; Vladimir P. Kochereshko; Dmitrii R. Yakovlev; W. Ossau; Scott A. Crooker; Greg Karczewski
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Influence of high excitation on excitonic states in GaN/AlGaN quantum wells
Author(s): D. K. Nelson; M. A. Jacobson; Nicolas Grandjean; J. Massies; P. Bigenwald; Alexey V. Kavokin
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Improvement of conductivity and breakdown cteristics of AlGaN/GaN HEMT structures in passivation experiments
Author(s): S. Shapoval; V. Gurtovoi; A. Kovalchuk; Lester Fuess Eastman; A. Vertjachih; Christophe Gaquiere; David Theron
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Electrodynamics of left-handed materials
Author(s): Alexander L. Efros; A. L. Pokrovsky
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The control of light by the phase transition in opal-VO2 phtonic crystals
Author(s): V. G. Golubev; A. V. Il'inskii; D. A. Kurdyukov; Andrei V. Medvedev; Alexander B. Pevtsov; A. V. Scherbakov; A. V. Sel'kin; E. B. Shadrin
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Fabrication of square spiral photonic crystals by glancing angle deposition
Author(s): Scott R. Kennedy; Michael J. Brett; O. Toader; Sajeev John
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Influence of temperature and free carries on four-wave mixing in semiconductor microcavities
Author(s): M. N. Makhonin; D. N. Krizhanovskii; A. N. Dremin; A. I. Tartakovskii; V. D. Kulakovskii; N. A. Gippius; Maurice S. Skolnick; John Stuart Roberts
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Three-dimensional Bragg diffraction in growth-disordered opals
Author(s): A. V. Baryshev; Alexander A. Kaplyanskii; Vladimir A. Kosobukin; M. F. Limonov; K. B. Samusev; D. E. Usvyat
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Coherent interpolariton scattering on moving gratings in microcavity with 25 nm GaAs/AlGaAs single quantum well
Author(s): D. Birkedal; Vadim G. Lyssenko; Jorn M. Hvam
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Local polariton modes in planar optical microcavities
Author(s): L. I. Deych; A. A. Lisyansky
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Whispering gallery modes in glass microspheres made by simple technology
Author(s): D. V. Gaikov; Elene V. Kolobkova; A. A. Lipovskii; V. G. Melehin; Vladimir G. Petrikov
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Three-dimensional GaN photonic crystals for visible spectral range
Author(s): G. Gajiev; V. G. Golubev; D. A. Kurdyukov; Alexander B. Pevtsov; V. V. Travnikov
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Optical and magnetic-resonance spectoscopy of single molecules
Author(s): J. Schmidt
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Magneto-optical and cyclotron resonance study of semiconductor nanostructures in very high magnetic fields
Author(s): Noboru Miura; T. Ikaida; K. Uchida; T. Yasuhira; K. Ono; Y. H. Matsuda; G. Springholz; M. Pinczolits; G. Bauer; E. Kurtz; Claus F. Klingshirn; Y. Shiraki; Yoshiro Hirayama
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Many-particle interaction in the tunneling nanostructures and STM/STS measurements
Author(s): P. I. Arseev; Natalia S. Maslova; Vladimir I. Panov; Sergei V. Savinov
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Study of high-power GaAs-based laser diodes operation and failure by cross-sectional electrostatic force microscopy
Author(s): A. Ankudinov; A. N. Titkov; Vadim P. Evtikhiev; Eugeny Yu. Kotelnikov; N. Bazhenov; Georgy G. Zegrya; H. Huhtinen; R. Laiho
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Raman studies as a tool for characterization of the strained hexagonal GaN/AlxGa1-xN superlattices
Author(s): V. Yu. Davydov; A. N. Smirnov; I. N. Goncharuk; R. N. Kyutt; M. P. Scheglov; M. V. Baidakova; W. V. Lundin; E. E. Zavarin; M. B. Smirnov; S. V. Karpov; H. Harima
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Plasma diagnostics of Ge-clusters in Si11-xgex mixed crystals
Author(s): Yu. S. Gordeev; Valery M. Mikoushkin; V. V. Brysgalov; Andrej G. Zabrodskii; M. V. Alekseenko; H. Grimmeiss
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Time-resolved nonlinear surface plasmon optics
Author(s): Yurii E. Lozovik; S. P. Merkulova; M. M. Nazarov; Aleksandr P. Shkurinov; P. Masselin
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Quanum-dot-like composition fluctuations in near-field magneto-photoluminescence spectra of InGaAsN alloys
Author(s): Alexander M. Mintairov; P. A, Blagnov; James L. Merz; Victor M. Ustinov; A. S. Vlasov; Alexey R. Kovsh; Jyh-Shyang Wang; Li-Chung Wei; Jim Y. Chi
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Raman sudy of Ge quantum dots formed by submonolayer Ge coverrages in Ge/Si superlattices
Author(s): Vladimir A. Volodin; D. A. Orehov; M. D. Efremov; V. A. Sachkov; B. A. Kolesov; N. D. Zakharov; V. A. Egorov; G. E. Cirlin; P. Werner
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Room-temperature photoluminescence of GeSi/Si(001) self-assembled islands in a 1.3-1.7 um wavelength range
Author(s): Yu. N. Drozdov; Z. F. Krasil'nik; D. N. Lobanov; A. V. Novikov; Mikhail Ya. Valakh; N. V. Vostokov; A. N. Yablonsky; V. A. Yukhymchuk
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Removal of spin degeneracy in SiGe-based nanostructures
Author(s): Sergey D. Ganichev; U. Roessler; Wilhelm Prettl; E. L. Ivchenko; Vassilij V. Bel'kov; R. Neumann; K. Brunner; Gerhard Abstreiter
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Hole transport in Ge/Si quantum dot field-effect transistors
Author(s): Andrei I. Yakimov; A. V. Dvurechenskii; V. V. Kirienko; Alexander I. Nikiforov
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Growth and characterization of Si-Si1-xGex-GaAs heterostructure with InGaAs quantum dots
Author(s): Timur M. Burbaev; I. P. Kazakov; Vadim A. Kurbatov; M. M. Rzaev; V. I. Vdovin
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Surface polaritons at nanoporous carbon-silicon interface
Author(s): I. P. Ipatova; O. V. Proshina; G. Benedek
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Shallow acceptors in Si/SiGe QW heterostructures
Author(s): D. V. Kozlov; Vladimir Ya. Aleshkin; Vladimir I. Gavrilenko
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About the phosphorus sensitization of silicon quantum dots in SiO2 photoluminescence
Author(s): David I. Tetelbaum; V. A. Burdov; A. N. Mikhaylov; Sergey A. Trushin
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Parallel magnetic field induced strong negative magnetoresistance in a wide p-Ge1-xSix/Ge/p-Ge1-xSix quantum well
Author(s): M. V. Yakunin; G. A. Alshanskii; Yu G. Arapov; V. N. Neverov; O. A. Kuznetsov
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New optical phenomena in Bose-condensed exciton system in quantum wells
Author(s): Yurii E. Lozovik; I. V. Ovchinnikov
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Spectral speckle analysis: a new method to measure coherence and dephasing in semiconductor nanostructures
Author(s): G. Kocherscheidt; Wolfgang W. Langbein; Roland Zimmermann
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Resonant states of carbon acceptor in p-InGaAs/GaAs -doped quantum well heterostructure
Author(s): D. M. Gaponova; Vladimir Ya. Aleshkin; Vladimir I. Gavrilenko; D. V. Kozlov; V. N. Shastin; R. Kh. Zhukavin; B. N. Zvonkov; E. A. Uskova; J. Niels Hovenier; Alexander F. G. van der Meer
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Structure effects on inter- and intra-band scattering of electrons in GaAs/AlxGa1-xAs and strained InxGa1-xAs/GaAs quantum wells
Author(s): H. C. Lee; Kien Wen Sun; Chien-Ping Lee
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Light absorption and emission in InAs/GaAs quantum dots and stepped quantum wells
Author(s): Vladimir Ya. Aleshkin; D. M. Gaponova; Dmitry G. Revin; Leonid E. Vorobjev; S. N. Danilov; Vadim Yu. Panevin; N. K. Fedosov; D. A. Firsov; V. A. Shalygin; Aleksey D. Andreev; Alexey E. Zhukov; N. N. Ledentsov; Victor M. Ustinov; G. E. Cirlin; V. A. Egorov; F. Fossard; Francois H. Julien; Elias Towe; Debdas Pal; S. R. Schmidt; Alois Seilmeier
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Optical and transport properties of p-type heterojunctions with lateral surface superlattice in perpendicular magnetic field
Author(s): V. Ya. Demikhovskii; D. V. Khomitsky
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Friedel oscillations of the magnetic field penetration in systems wirh spatial quantization
Author(s): Matvey V. Entin; L. I. Magarill; M. M. Mahmoodian
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Synchronization of dipole domains in GHz-driven superlattices
Author(s): A. K. Jappsen; A. Amann; A. Wacker; Ekkehard Schomburg; E. Schoell
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Separate electron-hole confinement in composite InAsyP1-y/GaxIn1-xAs quantum wells
Author(s): A. Yu. Silov; Balakrishnan Nair Aneeshkumar; M. R. Leys; N. S. Averkiev; P. C. M. Christianen; Joachim H. Wolter
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Auger recombination in strained InGaAsP quantum wells with Eg=0.7-1.6 eV
Author(s): Z. N. Sokolova; D. I. Gurylev; Nikita A. Pikhtin; Ilya S. Tarasov
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Effective mass anisotropy of T-electrons in GaAs/AlGaAs quantum well with InAs layer
Author(s): E. E. Vdovin; Yu N. Khanin; Yu V. Dubrovskii; Laurence Eaves; P. C. Main; Mohamed Henini; Geoff Hill
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On the zero phonon line homogeneous broadening in semiconductor QDs
Author(s): Serguei V. Goupalov; Robert A. Suris; P. Lavallard; David S. Citrin
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Optical memory concepts with self-organized quantum dots- material systems and energy-selective charging
Author(s): C. Kapteyn; J. Ehehalt; R. Heitz; Dieter Bimberg; G. E. Cirlin; Victor M. Ustinov; N. N. Ledentsov
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Escape of carriers photoexcited in self-organized InAs/GaAs quantum dots
Author(s): P. N. Brunkov; A. Patane; A. Levin; Laurence Eaves; P. C. Main; Yu G. Musikhin; Boris V. Volovik; Alexey E. Zhukov; Victor M. Ustinov; S. G. Konnikov
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Heterostructure optical phonons in dynamics of quantum dot electronic excitations: new experimental evidences
Author(s): A. V. Baranov; V. G. Davydov; Anatoli V. Fedorov; H.-W. Ren; Shigeo Sugou; Yasuaki Masumoto
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Inelastic inyer-valence-band scattering of photoexcited holes in quantum dot structures
Author(s): B. H. Bairamov; B. P. Zakharchenya; V. V. Toporov; V. A. Voitenko; F. B. Bairamov; Mohamed Henini
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Time-resolved luminescence of self-assembled CdSe/ZnSe quantum dots
Author(s): V. S. Dneprovskii; O. Shaligina; E. A. Zhukov; Vadim P. Evtikhiev; Vladimir P. Kochereshko
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Influence of temperature and hydrostatic pressure on luminescence spactra of InAs/GaSa quantum dots
Author(s): V. A. Gaisin; A. Kh. Akopyan; B. S. Kulinkin; B. V. Novikov; V. N. Petrov; Victor M. Ustinov; G. E. Cirlin
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Auger type relaxation of excitons in self assembled quantum dots via resonance scattering
Author(s): I. Larkin; A. Vagov
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Soft collective charge mode in a 1D electron system
Author(s): Vladimir A. Sablikov; Yasha Gindikin
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Effects of accidental microconstriction on the quantizes conductance in long wires
Author(s): A. A. Starikov; I. I. Yakimenko; Karl-Fredrik Berggren; A. C. Graham; K. J. Thomas; Michael Pepper; M. Y. Simmons
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Zero spin splitting of landau levels in 2D electron systems: role of sign of lande factor
Author(s): E. E. Takhtamirov; V. A. Volkov
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Persistent high-frequency hopping photoconductivity in GaAs/AlGaAs heterostructures in the quantum Hall regime
Author(s): I. L. Drichko; A. M. Diakonov; I. Yu. Smirnov; V. V. Preobrazhenskii; Aleksandr I. Toropov; Yuri M. Galperin
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Quantum interface in magnetooscillation phenomena in two-dimensional electron gas
Author(s): N. S. Averkiev; S. A. Tarasenko
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Kinetic mechanism of current stratification in two-dimentional structures
Author(s): V. Yu. Kachorovskii; I. S. Lyubinskiy; L. D. Tsendin
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Many-body lines in tunneling spectra of Al/-GaAs junctions near resonant polaron threshold
Author(s): I. N. Kotel'nikov; S. E. Dizhur; F. V. Shtrom
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Breakdown of theinterger quantum hall effect: a microscopic model wirh a hydronamical analogy
Author(s): A. M. Martin; Laurence Eaves; K. A. Benedict
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Pinning of Landau levels in open two dimensional electron systems
Author(s): V. G. Popov; Yu V. Dubrovskii; E. E. Vdovin; Yu N. Khanin; Jean-Claude Portal; D. K. Maude; Thorvald G. Andersson; S. M. Wang
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Ultra-high coulomb energy in position controlled grown carbon nanotube
Author(s): Kazuhiko Matsumoto
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Ti/TiOx/Ti laternal tunnel junctions for single electron trsnsistor
Author(s): L. V. Litvin; Vladimir Kolosanov; D. G. Baksheev; V. A. Tkachenko; K. P. Mogilnikov; A. G. Cherkov; A. L. Aseev
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Current-induced cooling of nanostructures
Author(s): Eugen B. Dogonkin; Georgy G. Zegrya
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Segment of inhomogeneous mesoscopic loop as a dc power source
Author(s): S. V. Dubonos; Vladimir Kuznetsov; A. V. Nikulov
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Strongly modulated conduction in Ag/PLZT/LSCO ferroelectronic field-effect transistor
Author(s): I. Grekhov; L. Delimova; I. Liniichuk; D. Mashovets; I. Veselovsky
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Operating modes of the Auger-transistor and the photo-field detectors under strong electric field
Author(s): V. D. Kalganov; N. V. Mileshkina; E. V. Ostroumova
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Origin of the 1/f noise in GaN-based HFETs: Is it tunneling?
Author(s): Michael E. Levinshtein
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Optimization of InGaAs/InAlAs strained multiple quantum wells for amplitude modulators
Author(s): Maurico Pamplona Pires; Christiana V.-B. Tribuzy; Boris Yavich; P. L. Souza
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Metal nanoelectrodes for molecular transistor and investigation of electron transport in molecular systems
Author(s): D. B. Suyatin; E. S. Soldatov; Ivan Maximov; Lars Montelius; Lars Samuelson; G. B. Khomutov; S. P. Gubin; A. N. Sergeev-Cherenkov
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From bistability to spatio-teporal chaos in a resonant-tunneling diode
Author(s): J. Unkelbach; A. Amann; P. Rodin; E. Schoell
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Temperature dependence homogenous broadening and gain recovery dynamics in InGaAs quantum dots
Author(s): P. Borri; Wolfgang W. Langbein; S. Schneider; Ulrike Woggon; Roman Sellin; Dongxun Ouyang; Dieter Bimberg
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Interface luminescence and lassing at a type II single broken-gap heterojunction
Author(s): Konstantin D. Moiseev; Maya P. Mikhailova; Yury P. Yakovlev; Anthony Krier
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Ultrafast switch-off of an electrically pumped InAs/GaAs quantum dot laser
Author(s): A. V. Platonov; C. Lingk; Jochen Feldmann; Marcus Arzberger; Markus-Christian Amann; Gerhard Abstreiter
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Observation of phonon bottlebeck in quantum box cascade lasers
Author(s): O. Drachenko; Cyril Becker; V. V. Rylkov; Hideaki Page; D. V. Smirnov; Jean Leotin; Carlo Sirtori
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Gain and linewidth enhancement factor in InAs-quantum-dot and InAs-quantum-dash laser heterostructures
Author(s): Petr Georgievich Eliseev; Alexander A. Ukhanov; Andreas Stintz; Kevin J. Malloy
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High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells
Author(s): Alexey R. Kovsh; Alexey E. Zhukov; Nikolay A. Maleev; Sergei S. Mikhrin; A. V. Vasil'ev; Yuri M. Shernyakov; Daniil A. Livshits; Mikhail V. Maximov; D. S. Sizov; N. V. Kryzhanovskaya; Nikita A. Pikhtin; V. A. Kapitonov; Ilya S. Tarasov; N. N. Ledentsov; Victor M. Ustinov; Jyh-Shyang Wang; Li-Chung Wei; Gray Lin; Jim Y. Chi
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MBE growth of low-threshold long-wavelength QD lasers on GaAs substrates
Author(s): Nikolay A. Maleev; Alexey R. Kovsh; Alexey E. Zhukov; Sergei S. Mikhrin; A. V. Vasil'ev; E. S. Semenova; Yuri M. Shernyakov; E. V. Nikitina; N. V. Kryjanovskaya; D. S. Sizov; Ilja P. Soshnikov; Mikhail V. Maximov; N. N. Ledentsov; Victor M. Ustinov; Dieter Bimberg; Zhores I. Alferov
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Near-threshold spectral and modal characteristics of a curved-gratinf quantum-well distritbuted-feedback laser (c-DFB)
Author(s): Yann G. Boucher; Anton G. Deryagin; V. I. Kuchinskii; Grigorii S. Sokolovskii
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Non-linear power-current characteristics of quantum well lasers at high injection
Author(s): Vadim P. Evtikhiev; Eugeny Yu. Kotelnikov; D. V. Dorofeyev; Georgy G. Zegrya
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Semiconductor quantum dot superlattice for coherent acoustic phonon emission
Author(s): Alexander G. Khitun; Kang Lung Wang
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14XX nm pump lases for Raman and Er3+ doped fiber amplifiers
Author(s): Natalia V. Fetisova; Nikita A. Pikhtin; Ekaterina G. Golikova; A. Yu Leshko; Andrei V. Lyutetskiy; S. O. Slipchenko; Z. N. Sokolova; Ilya S. Tarasov
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Optical gain and lasing of trions in delta-doped ZnSe quantum wells
Author(s): Joachim Puls; G. V. Mikhailov; Fritz Henneberger; Dmitrii R. Yakovlev; Andreas Waag
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SC DHS InGaAsP/InP lasers( =1.5-1.6 um) with above-threshold internal quantum efficiency nsti about 100%
Author(s): Ilya S. Tarasov; Georgy G. Zegrya; G. V. Skrynnikov; Nikita A. Pikhtin; S. O. Slipchenko
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Use of nanostructure-cluster-based ion-implantation-induced saturable absorbers in multisection high-power 1.5um picosecond laser diodes
Author(s): G. B. Venus; A. Gubenko; Efim L. Portnoi; Eugene A. Avrutin; Jan-Michael Frahm; J. Kubler; S. Schelhase
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Self-focused distributed bragg reflector QW laser diodes
Author(s): D. A. Yanson; Edward U. Rafailov; Grigorii S. Sokolovskii; V. I. Kuchinskii; A. Catrina Bryce; John H. Marsh; Wilson Sibbett
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Er-doped SiO2 with silicon nanocrystals as a new active optical medium
Author(s): Irina N. Yassievich; Mikhail S. Bresler; Oleg B. Gusev; A. S. Moskalenko
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Influence of intraband relaxation processes on threshold and power-current characteristics of quantum well lasers
Author(s): Georgy G. Zegrya; Irina A. Kostko; Natalya A. Gunko; Eugen B. Dogonkin
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Terahertz emitting devices based on intersubband transitions in SiGe quantum wells
Author(s): T. N. Adam; R. T. Troeger; S. K. Ray; U. Lehmann; James Kolodzey
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Stimulated THz emission of acceptor-doped SiGe/Si
Author(s): Miron S. Kagan; Igor V. Altukhov; Elena G. Chirkova; Konstantin A. Korolev; Valery P. Sinis; R. T. Troeger; S. K. Ray; James Kolodzey
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Proposed terahertz bloch superlattice oscillator
Author(s): Alexander A. Andronov; I. Nefedov; A. Sosnin
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Impurity induced resonant states in modulation doped heterostructures
Author(s): M. A. Odnoblyudov; A. Blom; Irina N. Yassievich; K. A. Chao
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Resonant acceptor states in delta-doped SiGe nanostructures
Author(s): A. A. Prokofiev; M. A. Odnoblyudov; Irina N. Yassievich; K. A. Chao
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Gateable spin memory in InP quantum dots
Author(s): I. A. Yugova; I. V. Ignatiev; S. Yu. Verbin; I. Ya Gerlovin; V. K. Kalevich; A. Yu Shiryaev; Kirill V. Kavokin; Yasuaki Masumoto
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Spin orientation of two-dimensional electron gas under intraband optical pumping
Author(s): S. A. Tarasenko; E. L. Ivchenko
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Picosecond time scale spin-polarized electron kinetics in thin semiconductor layers
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Exciton states of nano-islands in ZnCdSe quantum wells
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Inhomogeneous luminescence of slow polaritons from near-surface two-dimensional excitonic system
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Nanostructures on flexible substrates
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