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Proceedings of SPIE Volume 4889

22nd Annual BACUS Symposium on Photomask Technology
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Volume Details

Volume Number: 4889
Date Published: 27 December 2002
Softcover: 144 papers (1380) pages
ISBN: 9780819446756

Table of Contents
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Mask industry assessment: 2002
Author(s): Kurt R. Kimmel
Show Abstract
Back to square 9: a demonstration of 9-in. reticle capablilty
Author(s): Kevin D. Cummings; Ludger U. Schneider-Stoermann; Ute Buttgereit; Mathias Irmscher; Dietmar Mueller; Peter Hudek; Dirk Beyer; Bernd Brendel; John M. Whittey; Benjamin George Eynon; Jason Harsch; Chris Constantine; Kirk Miller
Show Abstract
Process monitoring of etched fused silica phase-shift reticles
Author(s): Cynthia B. Brooks; Melisa J. Buie; Nabila L. Waheed; Patrick M. Martin; Phillip Walsh; Glenn Evans
Show Abstract
Sol-gel fabrication of high-quality photomask substrates
Author(s): Rahul Ganguli; D. Laurence Meixner; Steven G. Colbern; Matt S. Gleason; Douglas E Meyers; S. Ray Chaudhuri
Show Abstract
Comparison of endpoint methods in advanced photomask etch applications
Author(s): David J. Johnson; Jason Plumhoff; Jong Shin; Emmanuel Rausa
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Process bias control with thin Cr film blanks for 90-nm-node reticle fabrication
Author(s): Yukihiro Sato; Hitoshi Handa; Yasuyuki Kushida; Satoru Asai; Hiroshi Maruyama; Yutaka Miyahara; Minoru Naito; Ryugo Hikichi; Yoji Kawasaki; Hiroyuki Miyashita; Shigeru Noguchi
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Compensation of long-range process effects on photomasks by design data correction
Author(s): Jens Schneider; Martin Bloecker; Gerd Ballhorn; Nikola Belic; Hans Eisenmann; Danny Keogan
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Enforcement of mask rule compliance in model-based OPC'ed layouts during data preparation
Author(s): Dirk H. Meyer; Radovan Vuletic; Alexander Seidl
Show Abstract
Integrating CD and lithographic process window analysis with mask data preparation for subwavelength ICs
Author(s): Devendra Joshi; Danny Keogan; James Kenneth Falbo
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Development of new stream format with GDSII upper compatibility and high compression rate
Author(s): Koki Kuriyama; Junji Hirumi; Nobuyuki Yoshioka; Yutaka Hojo; Yuichi Kawase; Shigehiro Hara; Morihisa Hoga; Satoshi W. Watanabe; Masaru Inoue; Hidemuchi Kawase; Tomoko Kamimoto
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Automated flow for site definition and CD measurement with a SEM for use in mask production
Author(s): Christian Rotsch; Henning Haffner; Christian Ruebekohl; Bettine Buechner
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GDS-based mask data preparation flow: data volume containment by hierarchical data processing
Author(s): Steffen F. Schulze; Pat LaCour; Peter D. Buck
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Automated management of photomask inspection
Author(s): J. Gordon Hughes; Dave Muir
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Anatomy of a universal data model
Author(s): Thomas J. Grebinski
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Negative chemically amplified resist (nCAR) for DRAM mask fabrications
Author(s): Martin Tschinkl; Christian Buergel; Uwe A. Griesinger; Barbara Jeansannetas; Armelle B. E. Vix
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Advanced write tool effects on 100-nm node OPC
Author(s): Peter D. Buck; Kent G. Green; Kent B. Ibsen; Kent H. Nakagawa; Dongsung Hong; Prakash Krishnan; Dianna Coburn
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Resolution extensions in the Sigma7000 imaging pattern generator
Author(s): Tor Sandstrom; Niklas Eriksson
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Raster-shaped beam pattern generation for 70-nm photomask production
Author(s): Thomas H. Newman; Ira Finklestein; Huei-Mei Kao; Sriram Krishnaswami; Darryn Long; Richard L. Lozes; Henry Thomas Pearce-Percy; Allan L. Sagle; Jeffrey K. Varner; Stacey Winter; Mark A. Gesley; Frank E. Abboud
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Comparison of DUV wafer and reticle lithography: What is the resolution limit?
Author(s): Chris A. Spence; Cyrus Emil Tabery; Gerald Cantrell; Leslie B. Dahl; Peter D. Buck; William L. Wilkinson
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Analysis of the impact of reticle CD variations on the available process windows for a 100-nm CMOS process
Author(s): Staf Verhaegen; Geert Vandenberghe; Rik M. Jonckheere; Kurt G. Ronse
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Comprehensive approach to determining the specification for mask mean to target
Author(s): Sung-Woo Lee; In-Sung Kim; Jung-Hyun Lee; Han-Ku Cho; Woo-Sung Han
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Phase defect repair for the chromeless phase lithography (CPL) mask
Author(s): Steven Fan; Michael Hsu; Alex Tseng; J. Fung Chen; Douglas J. Van Den Broeke; Henrry Lei; Stephen Hsu; Xuelong Shi
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Investigation of nanomachining as a technique for geometry reconstruction
Author(s): David Brinkley; Ron Bozak; Bin Chiu; Chanh Ly; Vikram Tolani; Roy White
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Alternating phase-shift mask inspection through the use of phase contrast enhancement techniques
Author(s): Larry S. Zurbrick; Maciej W. Rudzinski; Stanley E. Stokowski; Long He; Kurt R. Kimmel; Nishrin Kashwala
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Inspecting alternating phase-shift masks by matching stepper conditions
Author(s): Anja Rosenbusch; Shirley Hemar; Boaz Kenan
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Automated defect severity analysis for binary and PSM mask defects
Author(s): Lynn Cai; Jiunn-Hung Chen; Lin-Hsin Tu; Brian Chu; Noah Chen; Te Yang Fang; W. B. Shieh
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PRIMADONNA: a system for automated defect disposition of production masks using wafer lithography simulation
Author(s): Daniel J. Bald; Saghir Munir; Barry Lieberman; William H. Howard; Chris A. Mack
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Reticle defect printability: impact on yield and feedback to suppliers
Author(s): Robert Vinje; Arthur D. Klaum; David Chmielewski; Matt J. Lamantia; Dawn M. Woolery; Dianna L. Coburn; Colleen P. Weins
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Electron-beam-induced processes and their applicability to mask repair
Author(s): Volker A. Boegli; Hans W. P. Koops; Michael Budach; Klaus Edinger; Ottmar Hoinkis; Bernd Weyrauch; Rainer Becker; Rudolf Schmidt; Alexander Kaya; Andreas Reinhardt; Stephan Braeuer; Heinz Honold; Johannes Bihr; Jens Greiser; Michael Eisenmann
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Photomask dimensional metrology in the SEM: Has anything really changed?
Author(s): Michael T. Postek; Andras E. Vladar; Marylyn Hoy Bennett
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Electrical dimension characterization of binary and alternating aperture phase-shifting masks
Author(s): Martin McCallum; Stewart Smith; Alan Lissimore; Anthony J. Walton; J. Tom M. Stevenson
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Reliable subnanometer repeatability for CD metrology in a reticle production environment
Author(s): Andrew C. Hourd; Anthony Grimshaw; Gerd Scheuring; Christian Gittinger; Stefan Doebereiner; Frank Hillmann; Hans-Juergen Brueck; Shiuh-Bin Chen; Parkson W Chen; Rik M. Jonckheere; Vicky Philipsen; Hans Hartmann; Volodymyr Ordynskyy; Kai Peter; Thomas Schaetz; Karl Sommer
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Calibration and long-term stability evaluation of photomask CD-SEM utilizing JQA standard
Author(s): Izumi Santo; Masashi Ataka; Katsuyuki Takahashi; Norimiti Anazawa
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2002 update on the SEMI Standards Mask Qualification Terminology Task Force
Author(s): Rik M. Jonckheere
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New NIST photomask linewidth standard
Author(s): James E. Potzick; J. Marc Pedulla; Michael T. Stocker
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High-resolution photomask phase measurement tool
Author(s): Andrew J. Merriam; James J. Jacob
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Modified shape from shading approach to SEM-based photoresist CD metrology
Author(s): Parvez Ahammad; Amar Mukherjee
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Low-defect EUVL multilayers on standard-format mask blanks
Author(s): James A. Folta; Patrick A. Kearney; Cindy C. Larson; Michael K. Crosley; Emily Fisch; Kenneth C. Racette
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Integration of antireflection coatings on EUV absorber stacks
Author(s): James R. Wasson; Sang-In Han; N. V. Edwards; Eric Weisbrod; William J. Dauksher; Pawitter J. S. Mangat; Donald W. Pettibone
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High-performance 6-in. EUV mask blanks produced under real production conditions by ion-beam sputter deposition
Author(s): Hans Willy Becker; Frank Sobel; Lutz Aschke; Markus Renno; Juergen Krieger; Ute Buttgereit; Guenter Hess; Frank Lenzen; Konrad Knapp; Sergey A. Yulin; Torsten Feigl; Thomas Kuhlmann; Norbert Kaiser
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Impact of EUV mask quality on optical inspection sensitivity
Author(s): Donald W. Pettibone; Aditya Dayal; Stanley E. Stokowski
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Evaluation of the capability of a multibeam confocal inspection system for inspection of EUVL mask blanks
Author(s): Alan R. Stivers; Ted Liang; Michael J. Penn; Barry Lieberman; Gilbert V. Shelden; James A. Folta; Cindy C. Larson; Paul B. Mirkarimi; Christopher C. Walton; Eric M. Gulliksong; Moonsuk Yi
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Performance of repaired defects and attPSM in EUV multilayer masks
Author(s): Yunfei Deng; Bruno La Fontaine; Andrew R. Neureuther
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Recovery of Mo/Si-multilayer-coated LTEM substrate
Author(s): Pawitter J. S. Mangat; A. Alec Talin; Andrew F. Hooper; Diana Convey; Sang-In Han; James R. Wasson
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EUVL square mask patterning with TaN absorber
Author(s): Pei-yang Yan; Andy Ma; Yi-Chiau Huang; Brigitte C. Stoehr; Juan Valdivia
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PMJ 2002 Panel Discussion Review: Lithography strategy from 90- to 65-nm nodes -- ArF, F2, or EPL?
Author(s): Hiroyoshi Tanabe; Yoshinori Nagaoka
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Porous silica frame for deep-UV lithography
Author(s): D. Laurence Meixner; Rahul Ganguli; Troy Robinson; De-Yin Jeng; Mark Morris; S. Ray Chaudhuri; Brian J. Grenon
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Aerial image measurement system for 157-nm lithography
Author(s): Klaus Eisner; Peter Kuschnerus; Jan-Peter Urbach; Christof M. Schilz; Thomas Engel; Axel M. Zibold; Takashi Yasui; Iwao Higashikawa
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Investigation of reticle defect formation at DUV lithography
Author(s): Kaustuve Bhattacharyya; William Waters Volk; Brian J. Grenon; Darius Brown; Javier Ayala
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Reticle defect management solutions for a wafer fab
Author(s): Robert C. Muller; Glen W. Scheid; Neal P. Callan
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Characterization of repairs to KrF 300-mm wafer printability for 0.13-um design rule with attenuated phase-shifting mask
Author(s): William Chou; Tsung Chen; Will Tseng; Peter Huang; Chin Chih Tseng; Mars Chung; Dick Wang; Norman Huang
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Extended defect printability study for 100-nm design rule using 193-nm lithography
Author(s): Vicky Philipsen; Rik M. Jonckheere
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Manufacturability evaluation of model-based OPC masks
Author(s): Sung-Hoon Jang; Sonny Y. Zinn; Won-Tai Ki; Ji-Hyun Choi; Chan-Uk Jeon; Seong-Woon Choi; Hee-Sun Yoon; Jung-Min Sohn; Yong-Ho Oh; Jai-Cheol Lee; Sungwoo Lim
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Polarization contact: mask engineering
Author(s): Michael Lam; Andrew R. Neureuther
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Alternatives to alternating phase-shift masks for 65 nm
Author(s): J. Andres Torres; Wilhelm Maurer
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Mask error enhancement-factor (MEEF) metrology using automated scripts in CATS
Author(s): Paul J. M. van Adrichem; Frank A. J. M. Driessen; Kees van Hasselt; Hans-Juergen Brueck
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Full phase-shifting methodology for 65-nm-node lithography
Author(s): Christophe Pierrat
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Application of Cr-less mask technology for sub-100-nm gate with single exposure
Author(s): Sung-Hyuck Kim; Dong-Hoon Chung; Ji-Soong Park; In-Kyun Shin; Seong-woon Choi; Jung-Min Sohn; Jae-Han Lee; Hye-Soo Shin; J. Fung Chen; Douglas Van Den Broeke
Show Abstract
Tuning MEEF for CD control at 65-nm node based on chromeless phase lithography (CPL)
Author(s): Douglas J. Van Den Broeke; Thomas L. Laidig; Kurt E. Wampler; Stephen Hsu; Xuelong Shi; Michael Hsu; Paul Burchard; J. Fung Chen
Show Abstract
Optimizing etch uniformity for alternating aperture phase-shift masks on Etec Systems Tetra photomask etch system
Author(s): Nabila Lehachi Waheed; Cynthia J. Brooks
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Influence of the baking process for chemically amplified resist on CD performance
Author(s): Shiho Sasaki; Takeshi Ohfuji; Masa-aki Kurihara; Hiroyuki Inomata; Curt A. Jackson; Yoshio Murata; Daisuke Totsukawa; Naoko Tsugama; Naoki Kitano; Naoya Hayashi; David H. Hwang
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Enhancement of KRS-XE for 50-keV advanced mask-making applications
Author(s): Karen E. Petrillo; David R. Medeiros; Jim Bucchignano; Marie Angelopoulos; Dario L. Goldfarb; Wu-Song Huang; Wayne M. Moreau; Robert Lang; Chester Huang; Christina Deverich; Thomas J. Cardinali
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Improvement of NLD mask dry etching system for 100-nm-node technology
Author(s): Yoshiyuki Tanaka; Nobuyuki Yoshioka; Noriyuki Harashima; Takaei Sasaki; Kiyoshi Kuwahara; Toshio Hayashi; Mutsumi Hara; Yasushi Ohkubo
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Comparative evaluation of mask production CAR development processes with stepwise defect inspection
Author(s): Woo-Gun Jeong; Jung-Kwan Lee; Dong-Il Park; Eu-Sang Park; Jong-Hwa Lee; Sun-Kyu Seo; Dong-Heok Lee; Jin-Min Kim; Sang-Soo Choi; Soo-Hong Jeong
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90-nm-node CD uniformity improvement using a controlled gradient temperature CAR PEB process
Author(s): Dong-Il Park; Soon-Kyu Seo; Eu-Sang Park; Jong-Hwa Lee; Woo-Gun Jeong; Jin-Min Kim; Sang-Soo Choi; Soo-Hong Jeong
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Study of the role of Cl2, O2, and He in the chrome etch process with optical emission spectroscopy
Author(s): Rex Beach Anderson; Guenther Ruhl; Nicole L. Sandlin; Melisa J. Buie
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Pellicle life-testing for high-exposure dose applications
Author(s): Dan L. Schurz; Warren W. Flack
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Cr photomask etch performance and its modeling
Author(s): Banqiu Wu; David Y. Chan
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Improving feature-size linearity for alternating phase-shift mask applications utilizing a next-generation ICP source
Author(s): Jong Shin; Chris Constantine; Jason Plumhoff; Emmanuel Rausa
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STEAG HamaTech resist coater ASR5000: tool concept and process results
Author(s): Christian Krauss; Uwe U. Dietze; Fei Xu; Corinna Koepernik; Peter Dress; Peter Voehringer; Mathias Irmscher; Jakob Szekeresch
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Higher anisotropy and improved surface conditions for 90-nm-node MoSiON ICP dry etch
Author(s): Dong-Soo Min; Byung-Soo Chang; Hyuk-Joo Kwon; Boo-Yeon Choi
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Characteristics of selective MoSiON etching in a chlorine plasma
Author(s): Byung-Soo Chang; Dong-Soo Min; Hyuk-Joo Kwon; Boo-Yeon Choi
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Preserving EAPSM phase and transmission in the clean process
Author(s): Se-Jong Choi; Si-Yeul Yoon; Yong-Dae Kim; Hak-Weon Lee; Dae-Hong Kim; Si-Woo Lee; Dong-Heok Lee; Jin-Min Kim; Sang-Soo Choi; Soo Hong Jeong
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Mask patterning using chemically amplified resists and the novel STEAG HamaTech Blank Coater ASR5000
Author(s): Corinna Koepernik; Dirk Beyer; Peter Dress; Thomas Hoffmann; Peter Hudek; Mathias Irmscher; Christian Krauss; Bernd Leibold; Dietmar Mueller; Christian Reuter; Reinhard Springer; Jakob Szekeresch; Peter Voehringer
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Performance of proximity gap suction development (PGSD)
Author(s): Hideaki Sakurai; Masamitsu Itoh; Yukihiko Esaki; Kotaro Ooishi; Kazuo Sakamoto; Mika Nakao; Toshiharu Nishimura; Hiroyuki Miyashita; Naoya Hayashi
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Novel resist development system for photomasks
Author(s): Masamitsu Itoh; Hideaki Sakurai; Yukihiko Esaki; Kotaro Ooishi; Kazuo Sakamoto
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Line edge roughness comparison between wet and dry etched reticles
Author(s): Kunal N. Taravade; Robert C. Muller; Susan Erichsrud
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Laser PG performance for 100-nm photomasks
Author(s): Mats Rosling; Andrzej Karawajczyk; Per Askebjer; Raoul Zerne; Allen M. Carroll; Robert Eklund; Hans Fosshaug; Torbjoern Sandstrom
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PEC fogging effect analysis using high-performance EB simulator capable of large-area mask pattern simulation
Author(s): Naoko Kuwahara; Takeshi Ohfuji; Naoya Hayashi; Curt A. Jackson; Naoki Kitano; David H. Hwang
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Electron-beam proximity effect correction on the MEBES eXara mask pattern generator
Author(s): Robert L. Dean; Ki-Ho Baik
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Fogging effect consideration in mask process at 50-KeV e-beam systems
Author(s): Seung-Hune Yang; Yo-Han Choi; Jong-Rak Park; Yong-Hoon Kim; Sung-Woon Choi; Hee-Sun Yoon; Jung-Min Sohn
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Optimum PEC conditions under resist heating effect reduction for 90-nm-node mask writing
Author(s): Eu Sang Park; Jong Hwa Lee; Dong Il Park; Woo Gun Jeong; Soon Kyu Seo; Jin Min Kim; Sang-Soo Choi; Soo-Hong Jeong
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Advanced CD linearity improvement for multiproject wafers and SoC at 95-nm technology node
Author(s): Jeremy Lu; Nicole L. Sandlin; Hidetoshi Sato; Colbert Lu; Nicole Cheng; Torey Huang; Clyde Su; Melisa J. Buie
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Enhancement of CD uniformity and throughput with KrF photomask repeater
Author(s): Tae-Joong Ha; Yong-Kyoo Choi; Oscar Han
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Simple method for separating and evaluating origins of a side error in mask CD uniformity: photomask blanks and mask-making processes
Author(s): Yo-Han Choi; Jong-Rak Park; Moon-Gyu Sung; Seung-Hune Yang; Soon-Ho Kim; Ho-June Lee; Jeong-Yun Lee; Il-Yong Jang; Yong-Hoon Kim; Sung-Woon Choi; Hee-Sun Yoon; Jung-Min Sohn
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Mask defect specifications with fail-bit-map analysis
Author(s): Shinji Yamaguchi; Eiji Yamanaka; Hiroyuki Morinaga; Kohji Hashimoto; Takashi Sakamoto; Akira Hamaguchi; Satoru Matsumoto; Osamu Ikenaga; Soichi Inoue
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Cpk and Ppk: one capability index is not enough to measure photomask CD performance
Author(s): Timothy L. Bittleston
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Utilizing effective statistical process control limits for critical dimension metrology
Author(s): Joel Thomas Buser
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Further developments in distributed hierarchical processing
Author(s): Paul DePesa; Danny Keogan
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Advanced and highly reliably distributed computing in a fully automated environment
Author(s): Gerd Ballhorn; Martin Bloecker; Danny Keogan; Peter Moberts
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No-fault assurance: linking fast-process CAD and EDA
Author(s): Andrew R. Neureuther; Frank E. Gennari
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Filtering noisy data for T-less model calibration
Author(s): Junjiang Lei; David K. H. Lay
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Fast full-chip MEEF simulations for mask and wafer metrology
Author(s): Chi-Ming Tsai; Hua-Yu Liu; Armen Kroyan; Ning-Chuan Shen; Yao-Ting Wang
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Use of nanomachining for 100-nm mask repair
Author(s): Bob LoBianco; Roy White; Ted Nawrocki
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Defect printability analysis on alternating phase-shifting masks for 193-nm lithography
Author(s): Yasutaka Morikawa; Yousuke Totsu; Masaharu Nishiguchi; Morihisa Hoga; Naoya Hayashi; Linyong Pang; Gerard T. Luk-Pat
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Energy flux method for die-to-database inspection of critical layer reticles
Author(s): Hector I. Garcia; William Waters Volk; Yalin Xiong; Sterling G. Watson; Zongchang Yu; Zhian Guo; Lantian Wang
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Simulation-based defect printability analysis on alternating phase-shifting masks for 193-nm lithography
Author(s): Linyong Pang; Zongchang Yu; Gerard T. Luk-Pat; Jerry X. Chen; William Volk
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Feasibility study of detectability and printability for TaSiOx
Author(s): Masaharu Nishiguchi; Yasutaka Morikawa; Toshiaki Motonaga; Kenji Noguchi; Shiho Sasaki; Hiroshi Mohri; Morihisa Hoga; Naoya Hayashi
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Identification of defect source to control reticle defect density for CAR and dry etching in the photomask process
Author(s): Sung-Yong Cho; Won-Suk Ahn; Won-Il Cho; Moon-Gyu Sung; Seong-Yong Moon; Seong-Woon Choi; Hee-Sun Yoon; Jung-Min Sohn
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Mask inspection challenges for 90- and 130-nm device technology nodes: inspection sensitivity and printability study using SEMI standard programmed defect masks
Author(s): Won D. Kim; Shinji Akima; Christopher M. Aquino; Charika Becker; Mark D. Eickhoff; Tsuyoshi Narita; Soo-Kim Quah; Peter M. Rohr; Robert Schlaffer; Junichi Tanzawa; Yoshiro Yamada
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Inspection of laser-written reticles for the 90-nm node
Author(s): Anthony Vacca; Mohsen Ahmadian; Jerry Xiaoming Chen; Franklin D. Kalk
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Inspectability and lithographic effects of reticle defects under the aggressive OPC environment
Author(s): Byung Gook Kim; Keishi Tanaka; Nobuyuki Yoshioka; Keiichi Hatta; Masao Otaki
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Partitioning of photomask processes for defects: II.
Author(s): Charles H. Howard; Matthew J. Lamantia
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Aerial-image-based inspection of binary (OPC) and embedded-attenuated PSM
Author(s): Felix Chang; Chang-Cheng Hung; John C.H. Lin; Anja Rosenbusch; Reuven Falah; Shirley Hemar
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Inspection capability of chromeless phase-shift masks for the 90-nm node
Author(s): Darren Taylor
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Photomask repair using an advanced laser-based repair system (MARS2)
Author(s): Michael R. Schmidt; Phillip Flanigan; David Thibault
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AltPSM inspection capability and printability of quartz defects
Author(s): Jan P. Heumann; Mardjan Zarrabian; Mario Hennig; Wolfgang Dettmann; Larry S. Zurbrick; Michael Lang
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Mask blanks and their (sometimes invisible) defects
Author(s): Emily Fisch; Kenneth C. Racette; James A. Folta; Cindy C. Larson
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Application of mask simulation to mask repair
Author(s): Christian R. Musil; Diane K. Stewart; Richard F. Clark
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MARS2: an advanced femtosecond laser mask repair tool
Author(s): Alfred Wagner; Richard A. Haight; Peter Longo
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Advanced FIB mask repair technology for 100-nm/ArF lithography
Author(s): Ryoji Hagiwara; Anto Yasaka; Kazuo Aita; Osamu Takaoka; Yoshihiro Koyama; Tomokazu Kozakai; Toshio Doi; Masashi Muramatsu; Katsumi Suzuki; Yasuhiko Sugiyama; Hiroshi Sawaragi; Mamoru Okabe; Shoji Shinohara; Masakatsu Hasuda; Tatsuya Adachi; Yasutaka Morikawa; Masaharu Nishiguchi; Yasushi Sato; Naoya Hayashi; Toshiya Ozawa; Yoshihiro Tanaka; Nobuyuki Yoshioka
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Pattern inspection of EUV masks using DUV light
Author(s): Ted Liang; Edita Tejnil; Alan R. Stivers
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Aerial-image microscopes for the inspection of defects in EUV masks
Author(s): Anton Barty; John S. Taylor; Russell M. Hudyma; Eberhard Adolf Spiller; Donald W. Sweeney; Gilbert V. Shelden; Jan-Peter Urbach
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Digital image processor for complex shape metrology
Author(s): Qi-De Qian
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Cr and TaN absorber mask etch CD performance study for extreme-ultraviolet lithography
Author(s): Guojing Zhang; Pei-yang Yan
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EUVL alternating phase-shift mask imaging evaluation
Author(s): Pei-yang Yan
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Dark field EUVL mask for 45-nm technology node poly-layer printing
Author(s): Pei-yang Yan
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Development of mask materials for EUVL
Author(s): Christine Heckle; Kenneth E. Hrdina; Bradford G. Ackerman; David W. Navan
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Experimental and numerical studies of the response of photomask hard pellicles to acoustic excitation
Author(s): Eric P. Cotte; Phillip L. Reu; Roxann L. Engelstad; Edward G. Lovell; Andrew Grenville; Chris K. Van Peski
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Image placement distortions in EPL masks
Author(s): Carey W. Thiel; Louis Kindt; Mark Lawliss
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Critical dimension and image placement issues for step and flash imprint lithography templates
Author(s): Kevin J. Nordquist; David P. Mancini; William J. Dauksher; Eric S. Ainley; Kathleen A. Gehoski; Douglas J. Resnick; Zorian S. Masnyj; Pawitter J. S. Mangat
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Pattern displacement induced by lens aberrations
Author(s): Eric Hendrickx; Geert Vandenberghe; Kurt G. Ronse; Albert Colina; Alex van der Hoff; Mircea V. Dusa; Jo Finders
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System to improve the understanding of collected logistic data to optimize cycle time and delivery performance
Author(s): Wim-Jan van Rooijen; Ben Rodriguez
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Hybrid optical proximity correction: concepts and results
Author(s): Meg Hung; Pratheep Balasingam
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Complementary double-exposure technique (CODE) solutions to the two-dimensional structures of 90-nm node
Author(s): Serdar Manakli; Yorick Trouiller; Olivier Toublan; Patrick Schiavone; Yves Fabien Rody; Pierre Jerome Goirand
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Application of chromeless phase lithography (CPL) masks in ArF lithography
Author(s): Bryan S. Kasprowicz; Christopher J. Progler; Wei Wu; Will Conley; Lloyd C. Litt; Douglas J. Van Den Broeke; Kurt E. Wampler; Robert John Socha
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PSM defect printability of extremely low-k1 sub-130-nm KrF lithography
Author(s): Won-Il Cho; Gisung Yeo; Seong-Yong Moon; Hee-Sun Yoon; Jung-Min Sohn
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Analytical approach to X-phenomenon in alternating phase-shifting masks
Author(s): Jong Rak Park; Soon Ho Kim; Hojune Lee; Il-Yong Jang; Yo-Han Choi; Seung-Hune Yang; Jeong-Yoon Lee; Yong-Hoon Kim; Sung-Woon Choi; Hee-Sun Yoon; Jung-Min Sohn
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Effects of alternating aperture PSM design on image imbalance for 65-nm technology
Author(s): Armen Kroyan; Hua-Yu Liu
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Advanced 193 tri-tone EAPSM (9% to 18%) for 65-nm node
Author(s): Laurent Dieu; Eric L. Fanucchi; Greg P. Hughes; John G. Maltabes; David L. Mellenthin; Will Conley; Lloyd C. Litt; Kevin Lucas; Robert John Socha; Kurt E. Wampler; Arjan Verhappen; Jan-Pieter Kiujten
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LithoScope: simulation-based mask layout verification with physical resist model
Author(s): Qi-De Qian
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Imaging 100-nm contacts with high-transmission attenuated phase-shift masks
Author(s): James V. Beach; John S. Petersen; Benjamin George Eynon; Darren Taylor; Dave J. Gerold; Mark J. Maslow
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Validation of ArF chromeless PSM in the sub-100-nm node DRAM cell
Author(s): Ju-Hyung Lee; Dong-Hoon Chung; Dong-Ho Cha; Ho-Chul Kim; Joon-Soo Park; Dong-Seok Nam; Sang-Gyun Woo; Han-Ku Cho; Woo-Sung Han
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Alt-PSM of contact with phase-assist feature for 65-nm node
Author(s): Jan-Wen You; Jaw-Jung Shin; Chung-Hsing Chang; Li-Wei Kung; Bin-Chang Chang; Chang-Min Dai; Tsai-Sheng Gau; Burn Jeng Lin
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Preliminary study of 65-nm-node alternating phase-shift mask fabrication
Author(s): Kouji Hosono; Naoyuki Ishiwata; Satoru Asai; Hiroshi Maruyama; Yutaka Miyahara; Syuichi Sanki; Youhei Yamashita; Yuichiro Hotta; Tomohiko Furukawa; Minoru Naitou; Hiroyuki Miyashita; Shigeru Noguchi
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Model-based OPC using the MEEF matrix
Author(s): Nicolas B. Cobb; Yuri Granik
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The vortex mask: making 80-nm contacts with a twist!
Author(s): Marc David Levenson; Grace Dai; Takeaki Ebihara
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Mesa or trench type for chromeless phase-shift lithography from photolithographic performance point of view
Author(s): Xuelong Shi; J. Fung Chen; Stephen Hsu; Michael Hsu; Douglas J. Van Den Broeke; Robert John Socha; Chun Hong Chang; Chang Min Dai
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Polarizing assist features for high-NA optical lithography
Author(s): Frederick T. Chen
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Programmable RET mask layout verification
Author(s): Daniel F. Beale; Jeffrey P. Mayhew; Michael L. Rieger; Zongwu Tang
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Effective distributed architecture for OPC and RET applications
Author(s): Robert M. Lugg; Mathias Boman; James Burdorf; Michael L. Rieger
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Precise and accurate characterization of DUV and V-UV phase-shifting mask materials by combined V-UV spectroscopic ellipsometry and x-ray reflectometry
Author(s): Pierre Boher; Adrien Darragon; Christophe Defranoux; Jean-Claude Fouere; Jean-Louis P. Stehle
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Image placement error due to pattern transfer for EUV masks
Author(s): Zorian S. Masnyj; James R. Wasson; Bing Lu; Eric Weisbrod; Pawitter J. S. Mangat; Kevin J. Nordquist; Eric S. Ainley; William J. Dauksher; Douglas J. Resnick
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Integration and optimization of the DUV ALTA pattern generation system using a CAR process with the Tetra photomask etch system
Author(s): Alex H. Buxbaum; Scott E. Fuller; Warren Montgomery; Michael E. Ungureit
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