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Proceedings of SPIE Volume 4754

Photomask and Next-Generation Lithography Mask Technology IX
Editor(s): Hiroichi Kawahira
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Volume Details

Volume Number: 4754
Date Published: 1 August 2002
Softcover: 97 papers (948) pages
ISBN: 9780819445179

Table of Contents
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Lithography strategy for 65-nm node
Author(s): Yan A. Borodovsky; Richard E. Schenker; Gary A. Allen; Edita Tejnil; David H. Hwang; Fu-Chang Lo; Vivek K. Singh; Robert E. Gleason; Joseph E. Brandenburg; Robert M. Bigwood
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Characteristics of negative-tone chemically amplified resist (MES-EN1G) for 50-keV EB mask writing system
Author(s): Takehiro Kondoh; Masamitsu Itoh; Toshiyuki Kai
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Comparative evaluation of e-beam sensitive chemically amplified resists for mask making
Author(s): Mathias Irmscher; Dirk Beyer; Joerg Butschke; Chris Constantine; Thomas Hoffmann; Corinna Koepernik; Christian Krauss; Bernd Leibold; Florian Letzkus; Dietmar Mueller; Reinhard Springer; Peter Voehringer
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Improvement of critical dimension stability of chemically amplified resist by overcoat
Author(s): Teruhiko Kumada; Atsuko Sasahara; Kazuyuki Maetoko; Kunihiro Hosono; Takemichi Honma; Yuji Kodaira; Yukio Nakashiba; Masaoshi Tsuzuki; Yasutaka Kikuchi
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Advanced pattern correction method for fabricating highly accurate reticles
Author(s): Shunichiro Sato; Masaaki Koyama; Mikio Katsumata; Ichiro Kagami; Hiroichi Kawahira
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Improvements in MoSi EAPSM CD bias and iso-dense linearity plasma etch results utilizing design of experiments process optimization of Gen III ICP plasma source
Author(s): Jason Plumhoff; Chris Constantine; J. Shin; Emmanuel Rausa
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Highly anisotropic etching of phase-shift masks using ICP of CF4-SF6-CHF3 gas mixtures
Author(s): Se-Jong Choi; Han-Sun Cha; Si-Yeul Yoon; Yong-Dae Kim; Dong-Hyuk Lee; Jin-Min Kim; Jin-Su Kim; Dong-Soo Min; Pil-Jin Jang; Byung-Soo Chang; Hyuk-Joo Kwon; Boo-Yeon Choi; Sang-Soo Choi; Soo Hong Jeong
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In-situ optical emission spectroscopic examination of chrome etch for photomasks
Author(s): Rex Anderson; Nicole L. Sandlin; Melisa J. Buie; Clyde Su; Ashish Agarwal; Cynthia J. Brooks; Yi-Chiau Huang; Brigitte C. Stoehr
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Lithography technology trend for DRAM devices
Author(s): Woo-Sung Han
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Process of manufacturing and inspection of high-end (ternary) tritone EAPSM reticles for 0.13um design rule generation
Author(s): Steve Tuan; Gidon Gottlib; Anja Rosenbusch
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Advanced data preparation and design automation
Author(s): Franklin M. Schellenberg
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Generic hierarchical engine for mask data preparation
Author(s): Christian K. Kalus; Wolfgang Roessl; Uwe Schnitker; Michal Simecek
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Investigating into mask contribution to device performance and chip functionality
Author(s): Andrew J. Watts; Jed H. Rankin
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Distributed hierarchical processing
Author(s): Paul DePesa; Danny Keogan
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High-performance hierarchical fracturing
Author(s): Nicolas B. Cobb; Weidong Zhang
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Life is better without nonorthogonal or non-45-deg. edges: a practical solution to alleviate the pain on OPC and mask writing
Author(s): Eric C. Lynn; Shih-Ying Chen
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Pattern recognition in the database of a mask layout
Author(s): Shih-Ying Chen; Eric C. Lynn; Jaw-Jung Shin
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Design flow automation for variable-shaped beam pattern generators
Author(s): Martin Bloecker; Gerd Ballhorn
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Simulation method using the image filter method
Author(s): Masahiko Minemura; Kazuhiko Takahashi; Mitsuo Sakurai; Kazuya Sugawa
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Enriching design intent for optimal OPC and RET
Author(s): Michael L. Rieger; Valery Gravoulet; Jeffrey P. Mayhew; Daniel F. Beale; Robert M. Lugg
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Phase assignment for bright field of dense contact
Author(s): Nail Tang
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Two-dimensional G-MEEF theory and applications
Author(s): Yuri Granik; Nicolas B. Cobb
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Template of specifications for assist feature script implementation
Author(s): Shih-Ying Chen; Eric C. Lynn
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Fogging and pattern loading effect by writing strategy
Author(s): Junsik S. Cho; Seung Hee Baek; Kyung-Han Nam; H. J. Cho; Daniel Courboin; Seong-Ho Jeong; In-Soo Lee; Cheol Shin; Hong-Seok Kim
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NEGATIVE-CAR blanks feasibility study results for EB reticle fabrication beyond 100 nm node
Author(s): Fumiko Ota; Masahiro Hashimoto; Keishi Asakawa; Takao Higuchi; Yasunori Yokoya
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Early mask results of KRS-XE and current progress in improving sensitivity and etch resistance
Author(s): Christina Deverich; Andrew J. Watts; Paul A. Rabidoux; Thomas J. Cardinali; William A. Aaskov; Peter Levin; Wu-Song Huang; Wayne M. Moreau; Marie Angelopoulos; Karen E. Petrillo; David Madeiros
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Comparison between positive and negative 50-k ev E-beam CAR for 0.1-um generation
Author(s): Denis Lin; Kevin Hung; Don Lee; Rex L. Chou; Hiromasa Unno; Samuel C. Yang
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Model of coating and drying process for flat polymer film fabrication
Author(s): Hiroyuki Kagami; Ryuji Miyagawa; Atsushi Kawata; Daisuke Nakashima; Shinji Kobayashi; Takahiro Kitano; Kazuhiro Takeshita; Hiroshi Kubota; Tadahiro Ohmi
Molecular contamination control in photomask/reticle manufacturing using chemically amplified resists (CAR) lessons from wafer lithography
Author(s): James S. Hudzik; Oleg P. Kishkovich; John K. Higley
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CAR dry etching technology to produce 0.13 um reticle
Author(s): W. Z. Chou; Fei-Gwo Tsai; C. C. Tuo; Chue San Yoo; T. S. Tsai; Lawrence Shue
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Etching selectivity and surface profile of attenuated phase-shifting mask using CF4/O2/He inductively coupled plasma (ICP)
Author(s): Si-Yeul Yoon; Se-Jong Choi; Yong-Dae Kim; Dong-Hyuk Lee; Han-Sun Cha; Jin-Min Kim; Sang-Soo Choi; Soo Hong Jeong
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Applications of multiple-wavelength absorption endpoint system in photomask dry etcher
Author(s): Dong-Soo Min; Pil-Jin Jang; Hyuk-Joo Kwon; Boo-Yeon Choi; Soo-Hong Jeong
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Dry etching of chrome for photomasks for 100-nm technology using chemically amplified resist
Author(s): Mark Mueller; Serguie Komarov; Ki-Ho Baik
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Microwave plasma resist stripping for mask manufacturing
Author(s): Guenther G. Ruhl; Pavel Nesladek; Astrid Boesl
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New concept of specification for mask flatness
Author(s): Masamitsu Itoh; Soichi Inoue; Katsuya Okumura; Tsuneyuki Hagiwara; Jiro Moriya
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Development of reticle-free exposure method with LCD projection image
Author(s): Kazumitsu Nakamura; Hiroshi Kubota; Akira Nakada; Tsuneo Inokuchi; Kouji Kosaka
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Development of mask-making process for CLM manufacturing technology
Author(s): Jin-Hyung Park; Dong-Hoon Chung; Man-Ki Lee; In-Kyun Shin; Seong-Woon Choi; Hee-Sun Yoon; Jung-Min Sohn; J. Fung Chen; Douglas J. Van Den Broeke
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Required performances of reticle inspection system for ArF lithography through analysis of defect printability study
Author(s): Byung Gook Kim; Keishi Tanaka; Nobuyuki Yoshioka; Naohisa Takayama; Keiichi Hatta; Shingo Murakami; Masao Otaki
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High-performance DUV inspection system for 100-nm generation masks
Author(s): Hideo Tsuchiya; Ikunao Isomura; Kazuhiro Nakashima; Kyoji Yamashita; Toshiyuki Watanabe; Takeshi Nishizaka; Hiroyuki Ikeda; Eiji Sawa; Masami Ikeda
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Detection of half-tone PSM pinhole with DUV reflected light source
Author(s): Takeshi Fujiwara; Hiromu Inoue; Kentaro Okuda; Takehiko Nomura; Mitsuo Tabata; Satoshi Endo
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130-nm reticle inspection using multibeam UV-wavelength database inspection
Author(s): Christopher M. Aquino; Robert Schlaffer
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Processing techniques in the manufacture of 100-nm node and below inspection test reticles
Author(s): Nicole Cheng; Clyde Su; Frank Chen; Bill Cheng; Darren Taylor
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Lithographic analysis of distributed photomask defects: II. Random mask CD errors
Author(s): Linard Karklin
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Comparison and correlation of VSS simulation results using images from different inspection systems
Author(s): Kevin Hung; Denis Lin; Rex L. Chou; Samuel C. Yang; Don Lee; Alex Tseng; Hiromasa Unno; Jiunn-Hung Chen; Jason H. Huang
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Photomask CD metrology at the 100-nm node
Author(s): John Allsop; Stephen Johnson; Marcel Demarteau; Onno Wismans
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Metrology methods comparison for 2D structures on binary and embedded attenuated phase-shift masks
Author(s): Matthew Lassiter; Benjamin George Eynon
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Characteristics of residues and optical change of HT PSM during stepwise wet cleaning and optimization of HT PSM cleaning process
Author(s): Woo-Gun Jeong; Dae-Woo Kim; Chang-Min Park; Ki-Won An; Dong-Heok Lee; Jin-Min Kim; Sang-Soo Choi; Soo Hong Jeong
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Development of hard pellicle for 157 nm
Author(s): Kaname Okada; K. Ootsuka; I. Ishikawa; Yoshiaki Ikuta; H. Kojima; T. Kawahara; T. Minematsu; H. Mishiro; Shinya Kikugawa; Y. Sasuga
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Experimental and numerical studies of the effects of materials and attachment conditions on pellicle induced distortions in advanced photomasks
Author(s): Eric P. Cotte; Roxann L. Engelstad; Edward G. Lovell; Daniel Tanzil; Florence O. Eschbach; Emily Y. Shu
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Pellicle-induced distortions in advanced photomasks
Author(s): Minoru Fujita; Masaya Akiyama; Masahiro Kondo; Hiroaki Nakagawa; Daniel Tanzil; Florence O. Eschbach; Eric P. Cotte; Roxann L. Engelstad; Edward G. Lovell
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Defect printability analysis on alternating phase-shifting masks
Author(s): Linyong Pang; Qi-De Qian; Kevin K. Chan; Yasutaka Morikawa; Masaharu Nishiguchi; Naoya Hayashi
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Defect dispositioning using mask printability analysis on alternating phase-shifting masks
Author(s): Chung-Hsing Chang; Chen-Hao Hsieh; San-De Tzu; Chang-Min Dai; Burn Jeng Lin; Linyong Pang; Qi-De Qian; Jiunn-Hung Chen; Jason H. Huang
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Defect printability of ArF alternative phase-shift mask: a critical comparison of simulation and experiment
Author(s): Ken Ozawa; Tooru Komizo; Hidetoshi Ohnuma
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Defect printability for 100-nm design rule using 193nm lithography
Author(s): Vicky Philipsen; Rik M. Jonckheere; Stephanie Kohlpoth; Andres Torres
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Simulation based defect printability analysis on attenuated phase-shifting masks
Author(s): Linyong Pang; Qi-De Qian; Kevin K. Chan; Nobuhito Toyama; Naoya Hayashi
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Assessment of mask quality assurance method of critical layers with high MEEF
Author(s): Hiroyuki Ishida; Michihide Tanaka; Yasuhiro Mizuma; Tetuya Kitagawa; Akihiro Ogura
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Optimization of Alt-PSM structure for 100-nm node ArF lithography: II
Author(s): Kei Mesuda; Nobuhito Toyama; Syogo Narukawa; Yasutaka Morikawa; Hiroshi Mohri; Naoya Hayashi; Morihisa Hoga
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Alternating phase-shifting masks: phase determination and impact of quartz defects--theoretical and experimental results
Author(s): Uwe A. Griesinger; Wolfgang Dettmann; Mario Hennig; Jan P. Heumann; Roderick Koehle; Ralf Ludwig; Martin Verbeek; Mardjan Zarrabian
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Reticle defect printability for sub-0.3k1 chromeless phase lithography (CPL) technology
Author(s): Stephen Hsu; Douglas J. Van Den Broeke; Xuelong Shi; J. Fung Chen; William T. Knose; Noel P. Corcoran; Srinivas Vedula; Craig W. MacNaughton; Michael Richie
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Application of AlSi-based materials on approach of chemical stability of embedded layer for bilayer attenuated phase-shifting mask in 193-nm lithography
Author(s): Cheng-Ming Lin; Wen-An Loong
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Simulation of transmittance on the effect of resolution enhancement of 100-nm pattern with attenuated phase-shifting mask in 193-nm lithography
Author(s): Cheng-Ming Lin
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Pattern fidelity improvement by considering the underlying patterns at defocus
Author(s): Karl Chiou; Jerry Huang; S. Lee; Chih Yu Lee; Nail Tang; Janet Peng
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Adjustment of optical proximity correction (OPC) software for mask process correction (MPC): Module 2. Lithography simulation based on optical mask writing tool simulation
Author(s): Alexandra Barberet; Peter D. Buck; Gilles L. Fanget; Olivier Toublan; Jean-Charles Richoilley; Michel Tissier
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EUVL mask fabrication for the 45-nm node
Author(s): Emily Fisch; Louis Kindt; Michael J. Lercel; Kenneth C. Racette; Carey T. Williams
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Application of vector scan electron-beam lithography to 45-nm node extreme-ultraviolet lithography reticles
Author(s): David M. Walker; Dhirendra P. Mathur; Clyde Su; Torey Huang
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Pattern printability for reflectance degradation of Mo/Si mask blanks in EUV lithography
Author(s): Minoru Sugawara; Masaaki Ito; Akira Chiba; Eiichi Hoshino; Hiromasa Yamanashi; Hiromasa Hoko; Taro Ogawa; Byoung Taek Lee; Takashi Yoneda; Masashi Takahashi; Iwao Nishiyama; Shinji Okazaki
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Modification of boundaries conditions in the FDTD algorithm for EUV mask modeling
Author(s): Alexandre Vial; Andreas Erdmann; Thomas Schmoeller; Christian K. Kalus
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Method for generating complementary mask data for an EPL stencil mask using a commercial pattern operation tool
Author(s): Akemi Moniwa; Fumio Murai
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Impact of deformation of the edges of two complementary patterns on electron-beam projection lithography mask making
Author(s): Hisatake Sano; Kenichi Morimoto; Yuuki Aritsuka; Hiroshi Fujita
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Imaging capability of low-energy electron-beam proximity projection lithography toward the 70-nm node
Author(s): Hiroyuki Nakano; Kumiko Oguni; Shinichiro Nohdo; Kaoru Koike; Shigeru Moriya
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Data processing for LEEPL mask: splitting and placement correction
Author(s): Isao Ashida; Shinji Omori; Hidetoshi Ohnuma
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Use of nanomachining for subtractive repair of EUV and other challenging mask defects
Author(s): David Brinkley; Roy White; Ron Bozak; Ted Liang; Gang Liu
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157-nm lithography program at International SEMATECH
Author(s): Giang T. Dao; Anthony Yen; Walter J. Trybula
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Feasibility study of TaSiOx-type Att-PSM for 157-nm lithography
Author(s): Kunio Watanabe; Osamu Yamabe; Noriyoshi Kanda; J. Kim; Noboru Uchida; Shigeo Irie; Toshifumi Suganaga; Toshiro Itani
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Fabrication of the 70-nm line patterns with ArF chromeless phase-shift masks
Author(s): Haruo Iwasaki; Shinji Ishida; Takeo Hashimoto
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New resolution enhancement method realizing the limit of single mask exposure
Author(s): Kenji Yamazoe; Masanobu Hasegawa; Kenji Saitoh; Akiyoshi Suzuki
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Flexible mask specifications
Author(s): Shigeki Nojima; Shoji Mimotogi; Masamitsu Itoh; Osamu Ikenaga; Shigeru Hasebe; Kohji Hashimoto; Soichi Inoue; Mineo Goto; Ichiro Mori
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Novel procedure for mask disposition using electrical signatures of mask defects
Author(s): Artur P. Balasinski; Walter Iandolo; Oindrila Ray; Linard Karklin; Valery Axelrad
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Comparing photomask and wafer post-develop defect formation
Author(s): Adam Smith; William A. Aaskov; Stephen E. Knight; Robert K. Leidy; Andrew J. Watts
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Process development of 6-in EUV mask with TaBN absorber
Author(s): Tsutomu Shoki; Morio Hosoya; Takeru Kinoshita; Hideo Kobayashi; Youichi Usui; Ryo Ohkubo; Shinichi Ishibashi; Osamu Nagarekawa
Show Abstract
EPL mask fabrication
Author(s): Michael J. Lercel; Carey T. Williams; Mark Lawliss; Robin Ackel; Louis Kindt; Emily Fisch
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New mask format for low-energy electron-beam proximity projection lithography
Author(s): Kaoru Koike; Shinji Omori; Kazuya Iwase; Isao Ashida; Shigeru Moriya
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EPL data conversion system EPLON
Author(s): Kokoro Kato; Kuninori Nishizawa; Tamae Haruki; Tadao Inoue
Show Abstract
Hard pellicle study for 157-nm lithography
Author(s): Emily Y. Shu; Fu-Chang Lo; Florence O. Eschbach; Eric P. Cotte; Roxann L. Engelstad; Edward G. Lovell; Kaname Okada; Shinya Kikugawa
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Progressive self-learning photomask defect classification
Author(s): Eric C. Lynn; Shih-Ying Chen; Tyng-Hao Hsu; Chang-Cheng Hung; Chin-Hsiang Lin
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Improved method for measuring and assessing reticle pinhole defects for the 100-nm lithography node
Author(s): Darren Taylor; Anthony Vacca; Larry S. Zurbrick
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New energy flux method for inspection of contact layer reticles
Author(s): William Waters Volk; Hector I. Garcia; Charika Becker; George Chen; Sterling G. Watson
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Alternating phase-shift mask inspection using multiple simultaneous illumunation techniques
Author(s): Larry S. Zurbrick; Jan P. Heumann; Maciej W. Rudzinski; Stanley E. Stokowski; Jan-Peter Urbach; Lantian Wang
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Next-generation mask metrology tool
Author(s): Gerhard Schlueter; Klaus-Dieter Roeth; Carola Blaesing-Bangert; Michael Ferber
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EPL technology development
Author(s): Kazuaki Suzuki
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Integrating real-time CD corrections into a laser pattern generator
Author(s): Steven Haddleton; Lars Ivansen; Michal Simecek; Uwe Schnitker; Lars Stiblert; Manfred Enzinger; Wolfgang Roessl; Mats Sundqvist; Christian K. Kalus
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Raster scan patterning solution for 100- and 70-nm OPC masks
Author(s): Frank E. Abboud; Ki-Ho Baik; Varoujan Chakarian; Damon M. Cole; Robert L. Dean; Mark A. Gesley; Herb Gillman; William C. Moore; Mark Mueller; Robert J. Naber; Thomas H. Newman; Romin Puri; Frederick Raymond; Mario Rougieri
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100-kV high-resolution e-beam lithography system: JBX-9300FS
Author(s): Hitoshi Takemura; Hirofumi Ohki; Moriyuki Isobe
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Solution for 100 nm: EBM-4000
Author(s): Yoshiaki Hattori; Kiyoshi Hattori; Ken-ichi Murooka; Takayuki Abe; Satoshi Yasuda; Taiga Uno; Eiji Murakami; Noriaki Nakayamada; Naoharu Shimomura; Ttsuyoshi Yamashita; Noboru Yamada; Akihiro Sakai; Hirohiko Honda; Toshiaki Shimoyama; Kiyoshi Nakaso; Hideo Inoue; Yoshiaki Onimaru; Keiichi Makiyama; Yoji Ogawa; Tadahiro Takigawa
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Mask design optimization for 70-nm technology node using chromeless phase lithography (CPL) based on 100% transmission phase shifting mask
Author(s): J. Fung Chen; Douglas J. Van Den Broeke; Michael Hsu; Thomas L. Laidig; Kurt E. Wampler; Xuelong Shi; Stephen Hsu; Ted Shafer
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CD variations from nontrivial mask-related factors
Author(s): Z. Mark Ma; Won D. Kim; Benjamen M. Rathsack; Guoqiang Xing; Mark H. Somervell; Hyesook Hong
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