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PROCEEDINGS VOLUME 4691

Optical Microlithography XV
Editor(s): Anthony Yen
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Volume Details

Volume Number: 4691
Date Published: 30 July 2002
Softcover: 174 papers (1848) pages
ISBN: 9780819444370

Table of Contents
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High-NA lithographic imagery at Brewster's angle
Author(s): Timothy A. Brunner; Nakgeuon Seong; William D. Hinsberg; John A. Hoffnagle; Frances A. Houle; Martha I. Sanchez
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Challenges in high NA, polarization, and photoresists
Author(s): Bruce W. Smith; Julian S. Cashmore
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Simple estimation of lens aberration with pinhole aperture on the backside of photomask
Author(s): Shuji Nakao; Shinroku Maejima; Shigenori Yamashita; Junji Miyazaki; Akira Tokui; Kouichirou Tsujita; Ichiriou Arimoto
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Impact of Zernike cross-term on linewidth control
Author(s): Toshiharu Nakashima; Kenji Higashi; Shigeru Hirukawa
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Flare and its impact on low-k1 KrF and ArF lithography
Author(s): Bruno M. La Fontaine; Mircea V. Dusa; Alden Acheta; Cinti Chen; Anatoly Bourov; Harry J. Levinson; Lloyd C. Litt; Melchior Mulder; Rolf Seltman; Judith van Praagh
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Effectiveness and confirmation of local area flare measurement method in various pattern layouts
Author(s): Dongseok Nam; Eunmi Lee; Sung-gon Jung; Young S. Kang; Gisung Yeo; Junghyun Lee; Hanku Cho; Woo-Sung Han; Joo-Tae Moon
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Is model-based optical proximity correction ready for manufacturing? Study on 0.12- and 0.175-um DRAM technology
Author(s): Yuping Cui; Franz X. Zach; Shahid A. Butt; Wai-Kin Li; Bernhard Liegl; Lars W. Liebmann
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Patterning half-wavelength DRAM cell using chromelessp phase lithography (CPL)
Author(s): Chungwei Michael Hsu; Ronfu Chu; J. Fung Chen; Douglas J. Van Den Broeke; Xuelong Shi; Stephen Hsu; Troy Wang
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Introduction of full-level alternating phase-shift mask technology into IC manufacturing
Author(s): Joerg Thiele; Marco Ahrens; Wolfgang Dettmann; M. Heissmeier; Mario Hennig; Burkhard Ludwig; Molela Moukara; Rainer Pforr
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Theoretical analysis of the potential for maskless lithography
Author(s): Chris A. Mack
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Algorithmic implementations of domain decomposition methods for the diffraction simulation of advanced photomasks
Author(s): Konstantinos Adam; Andrew R. Neureuther
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3D lumped parameter model for lithographic simulations
Author(s): Jeff D. Byers; Mark D. Smith; Chris A. Mack
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Illumination, mask, and tool effects on pattern and probe-based aberration monitors
Author(s): Garth Robins; Andrew R. Neureuther
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OPC and image optimization using localized frequency analysis
Author(s): Bruce W. Smith; Dale E. Ewbank
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LER as structural fluctuation of resist reaction and developer percolation
Author(s): Hiroshi Fukuda; Atsuko Yamaguchi
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Quantification of image quality
Author(s): Pong Wing Tat; Alfred K. K. Wong
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Contrast-based assist feature optimization
Author(s): Andres Torres; Yuri Granik; Luigi Capodieci
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Advanced hybrid optical proximity correction system with OPC segment library and model-based correction module
Author(s): Toshiya Kotani; Sachiko Kobayashi; Hirotaka Ichikawa; Satoshi Tanaka; Susumu Watanabe; Soichi Inoue
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Complex 2D pattern lithography at lambda/4 resolution using chromeless phase lithography (CPL)
Author(s): Douglas J. Van Den Broeke; J. Fung Chen; Thomas L. Laidig; Stephen Hsu; Kurt E. Wampler; Robert John Socha; John S. Petersen
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Model-based design improvements for the 100-nm lithography generation
Author(s): Kevin Lucas; Sergei V. Postnikov; Kyle Patterson; Chi-Min Yuan; Carla Nelson-Thomas; Matthew A. Thompson; Russell L. Carter; Lloyd C. Litt; Patrick K. Montgomery; Karl Wimmer
Show Abstract
CD versu. pitch across the slit for multiple 248-nm step-and-scan exposure tools
Author(s): Jo Finders; Robert de Kruif; Richard Bruls; Igor Bouchoms
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Optimization of process condition to balance MEF and OPC for alternating PSM: control of forbidden pitches
Author(s): Keeho Kim; Yong-Seok Choi; Robert John Socha; Donis G. Flagello
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Mask error tensor and causality of mask error enhancement for low-k1 imaging: theory and experiments
Author(s): Chun-Kuang Chen; Tsai-Sheng Gau; Jaw-Jung Shin; Ru-Gun Liu; Shinn Sheng Yu; Anthony Yen; Burn Jeng Lin
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Subwavelength lithography: an impact of photo mask errors on circuit performance
Author(s): Linard Karklin; Stan Mazor; Devendra Joshi; Artur P. Balasinski; Valery Axelrad
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Aerial image degradation effects due to imperfect sidewall profiles of EAPSM mask for 130-nm device node: 3D EMF simulations and wafer printing results
Author(s): Won D. Kim; Benjamen M. Rathsack
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CD control with effective exposure dose monitor technique in photolithography
Author(s): Masafumi Asano; Kyoko Izuha; Tadahito Fujisawa; Soichi Inoue
Show Abstract
New method to determine optimal photolithography process conditions using scatterometry
Author(s): Changan Wang; Simon Chang; Mark A. Boehm
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CD uniformity improvement by active scanner corrections
Author(s): Jan B.P. van Schoot; Oscar Noordman; Peter Vanoppen; Frans Blok; Donggyu Yim; Chan-Ha Park; Byeong-Ho Cho; Thomas Theeuwes; Young-Hong Min
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Analysis of focus errors in lithography using phase-shift monitors
Author(s): Bruno M. La Fontaine; Mircea V. Dusa; Jouke Krist; Alden Acheta; Jongwook Kye; Harry J. Levinson; Carlo Luijten; Craig B. Sager; Jack J. Thomas; Judith van Praagh
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New alternating phase-shifting mask conversion methodology using phase conflict resolution
Author(s): Christophe Pierrat; Michel L. Cote; Kyle Patterson
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Methodology for generating exposure tool specifications for alternating phase-shift mask application for 70-nm node
Author(s): Kafai Lai; Gregg M. Gallatin; Alan E. Rosenbluth; Carlos A. Fonseca; Lars W. Liebmann; Christopher J. Progler
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Through-pitch correction of scattering effects in 193-nm alternating phase-shift masks
Author(s): Martin Burkhardt; Ronald L. Gordon; Michael S. Hibbs; Timothy A. Brunner
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Theoretical discussion on reduced aberration sensitivity of enhanced alternating phase-shifting masks
Author(s): Alfred K. K. Wong
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Hybrid PPC methodology and implementation in the correction of etch proximity
Author(s): Chul-Hong Park; Sang-Uhk Rhie; Soo-Han Choi; Dong-Hyun Kim; Ji-Soong Park; Yoo-Hyon Kim; Moon-Hyun Yoo; Jeong-Taek Kong
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Universal process modeling with VTRE for OPC
Author(s): Yuri Granik; Nicolas B. Cobb; Thuy Do
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Assessment of OPC effectiveness using two-dimensional metrics
Author(s): Vincent Wiaux; Vicky Philipsen; Rik M. Jonckheere; Geert Vandenberghe; Staf Verhaegen; Thomas Hoffmann; Kurt G. Ronse; William B. Howard; Wilhelm Maurer; Moshe E. Preil
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Model-assisted double dipole decomposition
Author(s): Andres Torres; Franklin M. Schellenberg; Olivier Toublan
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Subresolution assist feature implementation for high-performance logic gate-level lithography
Author(s): Allen H. Gabor; James A. Bruce; William Chu; Richard A. Ferguson; Carlos A. Fonseca; Ronald L. Gordon; Kenneth R. Jantzen; Mukesh Khare; Mark A. Lavin; Woo-Hyeong Lee; Lars W. Liebmann; Karl Paul Muller; Jed H. Rankin; Patrick Varekamp; Franz X. Zach
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Minimization of image placement errors in chromeless phase-shift mask lithography
Author(s): Michael Fritze; Brian Tyrrell; Susan G. Cann; Chris Carney; Betty Ann Blachowicz; David J. Brzozowy; Thomas Kocab; Scott Bowdoin; Peter D. Rhyins; Christopher J. Progler; Patrick M. Martin
Show Abstract
Polarization masks: concept and initial assessment
Author(s): Michael Lam; Andrew R. Neureuther
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Attainable road to the lower-k1 extension using high-transmittance attenuated phase-shifting mask in the KrF lithography world
Author(s): Insung Kim; Sung-gon Jung; Hyung-Do Kim; Gisung Yeo; In-Gyun Shin; Junghyun Lee; Hanku Cho; Joo-Tae Moon
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Dipole decomposition mask design for full-chip implementation at 100-nm technology node and beyond
Author(s): Stephen Hsu; Noel P. Corcoran; Mark Eurlings; William T. Knose; Thomas L. Laidig; Kurt E. Wampler; Sabita Roy; Xuelong Shi; Chungwei Michael Hsu; J. Fung Chen; Jo Finders; Robert John Socha; Mircea V. Dusa
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Complementary double-exposure technique (CODE): a way to print 80-nm gate level using a double-exposure binary mask approach
Author(s): Serdar Manakli; Yorick Trouiller; Olivier Toublan; Patrick Schiavone; Corinne Miramond; Yves Fabien Rody; Frank Sundermann; J. D. Chapon; Pierre-Jerome Goirand
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Development of a sub-100-nm integrated imaging system using chromeless phase-shifting imaging with very high NA KrF exposure and off-axis illumination
Author(s): John S. Petersen; Will Conley; Bernard J. Roman; Lloyd C. Litt; Kevin Lucas; Wei Wu; Douglas J. Van Den Broeke; J. Fung Chen; Thomas L. Laidig; Kurt E. Wampler; David J. Gerold; Robert John Socha; Judith van Praagh; Richard Droste
Show Abstract
Desirable reticle flatness from focus deviation standpoint optical lithography
Author(s): Soichi Inoue; Masamitsu Itoh; Masafumi Asano; Katsuya Okumura; Tsuneyuki Hagiwara; Jiro Moriya
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Lateral shearing interferometer for phase-shift mask measurement at 193 nm
Author(s): Gerald Fuetterer; M. Lano; Norbert Lindlein; Johannes Schwider
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Influence of 157-nm specific cleaning procedures on the quality of FIB repair depositions on reticles
Author(s): Klaus Eisner; Christof M. Schilz; Alivina Williams; Stefan Hien; Martin Verbeek
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Attenuating phase-shifting mask at 157 nm
Author(s): Vladimir Liberman; Mordechai Rothschild; Steven J. Spector; Keith E. Krohn; Susan G. Cann; Stefan Hien
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Behavior of candidate organic pellicle materials under 157-nm laser irradiation
Author(s): Andrew Grenville; Vladimir Liberman; Mordechai Rothschild; Jan H. C. Sedlacek; Roger H. French; Robert C. Wheland; Xun Zhang; Joe Gordan
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157-nm pellicles: polymer design for transparency and lifetime
Author(s): Roger H. French; Robert C. Wheland; Weiming Qiu; M. F. Lemon; Gregory S. Blackman; Xun Zhang; Joe Gordon; Vladimir Liberman; A. Grenville; Roderick R. Kunz; Mordechai Rothschild
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157-nm lithography with high numerical aperture lens for 70-nm technology node
Author(s): Toshifumi Suganaga; Noriyoshi Kanda; J. Kim; Osamu Yamabe; Kunio Watanabe; Takamitsu Furukawa; Seiro Miyoshi; Toshiro Itani; Julian S. Cashmore; Malcolm C. Gower
Show Abstract
System design of a 157-nm scanner
Author(s): Hideki Nogawa; Hideo Hata; Michio Kohno
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157-nm technology: Where are we today?
Author(s): Jan Mulkens; Thomas J. Fahey; James A. McClay; Judon M. D. Stoeldraijer; Patrick Wong; Martin Brunotte; Birgit Mecking
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Performance enhancement of 157-nm Newtonian catadioptric objectives
Author(s): James E. Webb; Timothy Rich; Anthony R. Phillips; James D. Cornell
Show Abstract
System qualification and optimization for imaging performance on the 0.80-NA 248-nm step-and-scan systems
Author(s): Koen van Ingen Schenau; Hans Bakker; Mark Zellenrath; Richard Moerman; Jeroen Linders; Thomas Rohe; Wolfgang Emer
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Development of a 5-kHz ultra-line-narrowed F2 laser for dioptric projection systems
Author(s): Tatsuya Ariga; Hidenori Watanabe; Takahito Kumazaki; Naoki Kitatochi; Kotaro Sasano; Yoshifumi Ueno; Masayuki Konishi; Takashi Suganuma; Masaki Nakano; Toshio Yamashita; Toshihiro Nishisaka; Ryoichi Nohdomi; Kazuaki Hotta; Hakaru Mizoguchi; Kiyoharu Nakao
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High-power high-repetition-rate F2 lasers for 157-nm lithography
Author(s): Klaus Vogler; Ingo Klaft; Frank Voss; Igor Bragin; Elko Bergmann; Tamas Nagy; Norbert Niemoeller; Stefan Spratte; Rainer Paetzel; Sergei V. Govorkov; Gongxue Hua
Show Abstract
Controlling CD variations in a massively parallel pattern generator
Author(s): Jarek Z. Luberek; Allen M. Carroll; Torbjoern Sandstrom; Andrzej Karawajczyk
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New-generation projection optics for ArF lithography
Author(s): Yuji Chiba; Kazuhiro Takahashi
Show Abstract
High-NA and low-residual-aberration projection lens for DUV scanner
Author(s): Tomoyuki Matsuyama; Yuichi Shibazaki; Yasuhiro Ohmura; Takeshi Suzuki
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Performance of a high-productivity 300-mm dual-stage 193-nm 0.75-NA TWINSCAN AT:1100B system for 100-nm applications
Author(s): Rian Rubingh; Youri van Dommelen; Sjef Tempelaars; Marc Boonman; Roger Irwin; Edwin van Donkelaar; Hans Burgers; Guustaaf Savenaije; Bert Koek; Michael Thier; Oliver Roempp; Christian Hembd-Soellner
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Contamination rates of optical surfaces at 157 nm in the presence of hydrocarbon impurities
Author(s): Theodore M. Bloomstein; Vladimir Liberman; Mordechai Rothschild; Stephen T. Palmacci; D. E. Hardy; Jan H. C. Sedlacek
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Contamination and degradation of 157-nm stepper optical components: field experience at International SEMATECH
Author(s): Jeff Meute; Georgia K. Rich; Stefan Hien; Kim R. Dean; Carolyn Gondran; Julian S. Cashmore; Dominic Ashworth; James E. Webb; Lisa R. Rich; Paul G. Dewa
Show Abstract
Development of environmental control technologies for 157-nm lithography at ASET
Author(s): Yasuaki Fukuda; Seiji Takeuchi; Takashi Aoki; Hiroyuki Nagasaka; Soichi Owa; Fumika Yoshida; Youichi Kawasa; Keiji Egawa; Takehito Watanabe; Ikuo Uchino; Akira Sumitani; Kiyoharu Nakao
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Impact of photo-induced species in O2-containing gases on lithographic patterning at 193-nm wavelength
Author(s): Uzodinma Okoroanyanwu; Peter Kunze; Katharina H.B. Al-Shamery; Jeremias Romero; Joffre Bernard
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Solution to resist poisoning in the integration of 248- and 193-nm photoresists with low-k dielectric materials
Author(s): Sri Satyanarayana; Ken Brennan; Thieu Jacobs; Richard Berger
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Simple focus monitoring by eccentric illumination aperture
Author(s): Shuji Nakao; Shinroku Maejima; Naohisa Tamada; Shigenori Yamashita; Atsushi Ueno; Junji Miyazaki; Akira Tokui; Kouichirou Tsujita; Ichiriou Arimoto
Show Abstract
Maximizing common process latitude by integrated process development for 130-nm lithography
Author(s): Michael T. Reilly; Colin R. Parker; Frank W. Fischer; Todd Hiar
Show Abstract
Resist distribution effect of spin coating
Author(s): Sang-Kon Kim; Ji-Yong Yoo; Hye-Keun Oh
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Wafer edge-shot algorithm for wafer scanners
Author(s): Tsuneyuki Hagiwara; Masato Hamatani; Hideyuki Tashiro; Etsuya Morita; Shinichi Okita; Naoto Kondo
Show Abstract
Wafer flatness for CD control in photolithography
Author(s): Tadahito Fujisawa; Masafumi Asano; T. Sutani; Soichi Inoue; Hiroaki Yamada; Junji Sugamoto; Katsuya Okumura; Tsuneyuki Hagiwara; Satoshi Oka
Show Abstract
0.33-k1 ArF lithography for 100-nm DRAM
Author(s): Cheol-Kyu Bok; Seok-Kyun Kim; Hee-Bom Kim; Jin-Sung Oh; Chang-Nam Ahn; Ki-Soo Shin
Show Abstract
Integration using KrF and ArF resist materials in a full via firstdual-damascene process scheme with CVD OSG low-k dielectric
Author(s): Scott W. Jessen; K. Steiner; Thomas M. Wolf; William D. Josephson; S. Lytle; Mitsuru Sato; Chung Yih Lee; Ming Hui Fan
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Aberration sensitivity control for the isolation layer in low-k1 DRAM process
Author(s): Byeong-Ho Cho; Donggyu Yim; Chan-Ha Park; Seung-Hyuk Lee; Hyun-Jo Yang; Jae-Hak Choi; Yong-Chul Shin; Choi-Dong Kim; Jae-Sung Choi; Khil-Ohk Kang; Sang-Wook Kim; Tae-Hwa Yu; Jong-Kyun Hong; Jung-Chan Kim; Min-Seob Han; Ho-Young Heo; Young-Dae Kim; Dong-Duk Lee; Gyu-Han Yoon; Jan B.P. van Schoot; Thomas Theeuwes; Young-Hong Min
Show Abstract
Impact of synchronization errors on overlay and CD control
Author(s): Emmanuelle Luce; Sebastien Mougel; Pierre-Jerome Goirand; Jerome Depre
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193-nm lithography and resist reflow for the BEOL
Author(s): Ronald DellaGuardia
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Effect of scattering bar assist features in 193-nm lithography
Author(s): Lori Anne Joesten; Michael T. Reilly; Jason DeSisto; Christiane Jehoul
Show Abstract
Self-calibration of wafer scanners using an aerial image sensor
Author(s): Tsuneyuki Hagiwara; Masato Hamatani; Naoto Kondo; Kosuke Suzuki; Hisashi Nishinaga; Jiro Inoue; Koji Kaneko; Shunichi Higashibata
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Impact of scanner tilt and defocus on CD uniformity across field
Author(s): Shangting F. Detweiler; Simon Chang; Sandra Zheng; Patrick Gagnon; Christopher C. Baum; Mark A. Boehm; Jay M. Brown; Catherine H. Fruga
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Lithographic comparison of assist feature design strategies
Author(s): Katrin Reblinksy; Tobias Bach; Steffen F. Schulze; Martin I. Commons
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Bilayer and trilayer lift-off processing for i-line and DUV lithography
Author(s): Laura L. Popovich; Kathleen A. Gehoski; David P. Mancini; Douglas J. Resnick
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Improved adhesion of photoresist to III-V substrates using PECVD carbon films
Author(s): David P. Mancini; Steven M. Smith; Andrew F. Hooper; A. Talin; Daniel Chang; Douglas J. Resnick; Steven A. Voight
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Implementation of phase-shift focus monitor with modified illumination
Author(s): Shuji Nakao; Shinroku Maejima; Atsushi Ueno; Shigenori Yamashita; Junji Miyazaki; Akira Tokui; Kouichirou Tsujita; Ichiriou Arimoto
Show Abstract
Bottom antireflective coating processing techniques for via-first dual-damascene processes
Author(s): Nickolas L. Brakensiek
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Uniform metal patterning on micromachined 3D surfaces using multistep exposure of UV light
Author(s): Arief Suriadi; Frank Berauer; Akari Yasunaga; Alfred I-Tsung Pan; Hubert A. Vander Plas
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Contact-reducing method over topography by combining the RELACS technique and bilayer process
Author(s): Chieh-yu Lin; Karen E. Petrillo; David Dobuzinsky
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Innovative optical alignment technique for CMP wafers
Author(s): Ayako Sugaya; Yuho Kanaya; Shinichi Nakajima; Tadashi Nagayama; Naomasa Shiraishi
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Integration of new alignment mark designs in dual inlaid-copper interconnect processes
Author(s): Scott P. Warrick; Paul C. Hinnen; Richard J. F. van Haren; Chris J. Smith; Henry J. L. Megens; Chong-Cheng Fu
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Novel strategy for wafer-induced shift (WIS)
Author(s): Koichi Sentoku; Takahiro Matsumoto; Hideki Ina
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Clear-field dual alternating phase-shift mask lithography
Author(s): Douglas A. Bernard; Jiangwei Li
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Defect printability of alternating phase-shift mask: a critical comparison of simulation and experiment
Author(s): Ken Ozawa; Tooru Komizo; Koji Kikuchi; Hidetoshi Ohnuma; Hiroichi Kawahira
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CD control in phase-edge lithography: the effects of lens aberration and pattern layout
Author(s): Takuya Hagiwara; Katsuya Hayano; Akemi Moniwa; Hiroshi Fukuda
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Effect of quartz phase etch on 193-nm alternating phase-shift mask performance for the 100-nm node
Author(s): Kyle Patterson; Lloyd C. Litt; John G. Maltabes; Greg P. Hughes; Trish Robertson; B. Montgomery
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AttPSM CD control: mask bias and flare effects
Author(s): Young-Chang Kim; Geert Vandenberghe; Kurt G. Ronse
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Effect of feature size, pitch, and resist sensitivity on side-lobe and ring formation for via hole patterning in attenuated phase-shift masks
Author(s): Navab Singh; Moitreyee Mukherjee-Roy
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Impact of transmission error for attenuated phase-shift mask for 0.10-um technology
Author(s): Sia-Kim Tan; Qunying Lin; Chenggen Quan; Cho Jui Tay
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Tandem process proximity correction method
Author(s): Kohji Hashimoto; Tatsuaki Kuji; Shingo Tokutome; Toshiya Kotani; Satoshi Tanaka; Soichi Inoue
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Improved line-end foreshortening and corner-rounding control in optical proximity correction using radius of curvature method
Author(s): Maharaj Mukherjee; Vinhthuy Phan
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Adaptive OPC with a conformal target layout
Author(s): Robert M. Lugg; Daniel F. Beale; Jason Huang; Michael L. Rieger
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Model-based OPC considering process window aspects: a study
Author(s): Steffen F. Schulze; O'Seo Park; Rainer Zimmermann; Ming-Jui Chen; Pat LaCour; Emile Y. Sahouria; Yuri Granik; Nicolas B. Cobb
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Hopkins versus Abbe: a lithography simulation matching study
Author(s): Ralph E. Schlief; Armin Liebchen; J. Fung Chen
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Monte Carlo method for highly efficient and accurate statistical lithography simulations
Author(s): Sergei V. Postnikov; Kevin Lucas; Karl Wimmer; Vladimir Ivin; Andrey Rogov
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Influence of OPC features on the profile of 2D mask patterns
Author(s): Andrew Khoh; Tomas D. Milster; Byoung-Il Choi; Ganesh S. Samudra; Yihong Wu
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Assist feature OPC implementation for the 130 nm technology node with KrF and no forbidden pitches
Author(s): James C. Word; Siuhua Zhu; John L. Sturtevant
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Model-based OPC for phase-shifter edge lithography
Author(s): Hiroki Futatsuya; Tatsuo Chijimatsu; Minami Takayoshi; Ryo Tsujimura; Yoshihisa Komura; Yoshio Ito; Satoru Asai
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Enhancements in rigorous simulation of light diffraction from phase-shift masks
Author(s): Andreas Erdmann; Nishrin Kachwala
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New methods to calibrate simulation parameters for chemically amplified resists
Author(s): Bernd Tollkuehn; Andreas Erdmann; Niko Kivel; Stewart A. Robertson; Doris Kang; Steven G. Hansen; Anita Fumar-Pici; Tsann-Bim Chiou; Wolfgang Hoppe
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Aerial image simulations of soft and phase defects in 193-nm lithography for 100-nm node
Author(s): Frank A.J.M. Driessen; Paul van Adrichem; Vicky Philipsen; Rik M. Jonckheere; Hua-Yu Liu; Linard Karklin
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Tuning and simulating a 193-nm resist for 2D applications
Author(s): William B. Howard; Vincent Wiaux; Monique Ercken; Bang Bui; Jeff D. Byers; Mike Pochkowski
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Comparison between the process windows calculated with full and simplified resist models
Author(s): Mark D. Smith; Jeff D. Byers; Chris A. Mack
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OPC applications into embedded-OPC designs
Author(s): George E. Bailey; Travis E. Brist
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Flexible fragmentation rules for next-generation OPC: tag prior to fragmentation
Author(s): Shih-Ying Chen; Eric C. Lynn
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Etch simulations for lithography engineers
Author(s): Robert L. Jones; Chris A. Mack; Jeff D. Byers
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Accuracy of simulation based on the acid-quencher mutual diffusion model in KrF processes
Author(s): Keiko T. Hattori; Jun Abe; Hiroshi Fukuda
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Accuracy of new analytical models for resist formation lithography
Author(s): Juriy Malov; Christian K. Kalus; Henning Muellerke; Thomas Schmoeller; Robert Wildfeuer
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Assessment of different simplified resist models
Author(s): David Fuard; M Besacier; Patrick Schiavone
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Optical lithography simulation considering impact of mask errors
Author(s): Hee-Bom Kim; Won-Kwang Ma; Chang-Nam Ahn; Ki-Soo Shin
Show Abstract
CD prediction by threshold energy resist model (TERM)
Author(s): Ji-Yong Yoo; Yeong-Keun Kwon; Jun-Taek Park; Dong-Soo Sohn; Sang-Gon Kim; Young-Soo Sohn; Hye-Keun Oh
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Model-based OPC for 0.13-um contacts using 248-nm Att PSM
Author(s): Jaw-Jung Shin; T. C. Wu; Chun-Kuang Chen; R. G. Liu; Yao Ching Ku; Burn Jeng Lin
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OPC rectification of random space patterns in 193-nm lithography
Author(s): Mosong Cheng; Andrew R. Neureuther; Keeho Kim; Z. Mark Ma; Won D. Kim; Maureen A. Hanratty
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Inspection of chromeless AAPSM
Author(s): Darren Taylor; Matthew Lassiter; Benjamin George Eynon; Douglas J. Van Den Broeke; J. Fung Chen
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Evaluation of OPC mask printing with a raster scan pattern generator
Author(s): Thomas H. Newman; Jan M. Chabala; B.J. Marleau; Frederick Raymond; Olivier Toublan; Mark A. Gesley; Frank E. Abboud
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New photomask substrate for improved lithography performance
Author(s): Bryan S. Kasprowicz; Richard Priestley; Michael R. Heslin; David R. Fladd
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Mask damage by electrostatic discharge: a reticle printability evaluation
Author(s): Andrew Rudack; Lawrence Levit; Alvina M. Williams
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New photomask patterning method based on KrF stepper
Author(s): Tae-Jung Ha; Yong-Kyoo Choi; Oscar Han
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Defect printability and specification of ArF mask in repeating feature
Author(s): Wan-Ho Kim; Won-Kwang Ma; Hee-Bom Kim
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MEF studies for attenuated phase-shift mask for sub-0.13-um technology using 248 nm
Author(s): Sia-Kim Tan; Qunying Lin; Gek Soon Chua; Chenggen Quan; Cho Jui Tay
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Reticle process effects on OPC models
Author(s): Travis E. Brist; George E. Bailey
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Is it possible to improve MEEF?
Author(s): Seok-Hwan Oh; Hyoungkook Kim; Dae-Joung Kim; Young-Seok Kim; Chun-Suk Suh; Yong-Sun Koh; Chang-Lyong Song
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Characterization of a projection lens using the extended Nijboer-Zernike approach
Author(s): Peter Dirksen; Joseph J. M. Braat; Peter De Bisschop; Guido C.A.M. Janssen; Casper A. H. Juffermans; Alvina M. Williams
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Influence of laser spatial parameters and illuminator pupil-fill performance on the lithographic performance of a scanner
Author(s): Stephen P. Renwick; Steve D. Slonaker; Ivan Lalovic; Khurshid Ahmed
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Intrafield CD variation by stray light from neighboring field
Author(s): Chang-Moon Lim; Jung-Ho Song; Sung-Soo Woo; Ki-Sung Kwon; Chang-Nam Ahn; Ki-Soo Shin
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Effects of residual aberrations on line-end shortening in 193-nm lithography
Author(s): Mosong Cheng; Andrew R. Neureuther
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Modified Rayleigh equation: impact of image fluctuation on imaging performance
Author(s): Seiji Matsuura; Takeo Hashimoto
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Evaluation and characterization of flare in ArF lithography
Author(s): Lloyd C. Litt; Anatoly Bourov; Bruno M. La Fontaine; Eric M. Apelgren
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Method of Zernike coefficients extraction for optics aberration measurement
Author(s): Yoshihiro Shiode; Shuuichi Okada; Hiroki Takamori; Hideki Matsuda; Sachiko Fujiwara
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Measurement of the flare and in-field linewidth variation due to the flare
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Spherical aberration measurement and in-situ correction
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Effect of aberrations on defect printing and inspection
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New resolution enhancement technology for manufacturing sub-100-nm technology
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Image enhancement through square illumination shaping
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Printing 100-nm and sub-100-nm DRAM full-chip patterns with crosspole illumination in 0.63-NA ArF lithography
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Resist thermal flow technique for printing 0.12-um contact holes
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ArF imaging with off-axis illumination and subresolution assist bars: a compromise between mask constraints and lithographic process constraints
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Contact hole photo process improvement by multiple exposures with matched illumination settings
Author(s): Yeong-Song Yen; I-Hsiung Huang; Jiunn-Ren Huang; Kuei-Chun Hung; Chi-fa Ku; Ching-Hsu Chang; Cheng Yu Fang; Paul P.W. Yen
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Double-exposure strategy using OPC and simulation and the performance on wafer with sub-0.10-um design rule in ArF lithography
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Evaluation of double focal plane exposure technique for 248-nm and 193-nm lithography for semidense trenches and contacts
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Design and fabrication of customized illumination patterns for low-k1 lithography--a diffractive approach: II. Calcium fluoride controlled-angle diffusers
Author(s): Menelaos K Poutous; Marc D. Himel; William F. Delaney; Jared D. Stack; Alan D. Kathman; Adam S. Fedor; Robert E. Hutchins; Jerry L. Leonard
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Sub-0.10-um lithography technology with resolution enhancement technique
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Limitation of optical lithography for various resolution enhancement technologies
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Improvement of two-photon absorption lithography
Author(s): Masato Shibuya; Hiromi Ezaki
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Iso-focal characteristics of line patterns in dark field imaging
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Challenging the limit of single mask exposure
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Development of low-loss optical coatings for 157-nm lithography
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Aberration determination in early 157-nm exposure system
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Long-term laser durability testing of optical coatings and thin films for 157-nm lithography
Author(s): Vladimir Liberman; Mordechai Rothschild; Stephen T. Palmacci; N. N. Efremow; Jan H. C. Sedlacek; A. Grenville
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Sub-70-nm pattern fabrication using an alternating phase-shifting mask in 157-nm lithography
Author(s): Shigeo Irie; Noriyoshi Kanda; Kunio Watanabe; Toshifumi Suganaga; Toshiro Itani
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Meeting the challenges of 157-nm microstepper technology
Author(s): Osamu Yamabe; Noboru Uchida; Toshiro Itani
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157-nm system test for high-NA lithographic lens systems
Author(s): Horst Schreiber; Paul G. Dewa; K. Hanford; Robert Ligenza; Lisa R. Rich; Paul Jay Tompkins
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In-situ measurements of VUV optical materials for F2 laser
Author(s): Akira Sumitani; Yasuo Itakura; Fumika Yoshida; Youichi Kawasa; Jing Zhang; Noriyoshi Kanda; Toshiro Itani
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Simulation and characterization of silicon oxynitrofluoride films as a phase-shift mask material for 157-nm optical lithography
Author(s): SungKwan Kim; Eunchul Choi; Hyoungdo Kim; Jungmin Kim; Kwangsoo No
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Interference patterning of gratings with a period of 150 nm at a wavelength of 157 nm
Author(s): Gerald Fuetterer; Waltraud Herbst; Joerg Rottstegge; Margit Ferstl; Michael Sebald; Johannes Schwider
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Spectral metrologies for ultra-line-narrowed F2 laser
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High-repetition-rate excimer lasers for 193-nm lithography
Author(s): Wolfgang Zschocke; Hans Stephen Albrecht; Thomas Schroeder; Igor Bragin; Peter Lokai; Farid Seddighi; Christian Reusch; Anna Cortona; Kai Schmidt; Rainer Paetzel; Klaus Vogler
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Laser resistance of fused silica for microlithography: experiments and models
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Characterization of DUV and VUV optical components
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Reduction of reflective notching through illumination optimization
Author(s): James C. Word; Dyiann Chou; Yiming Gu; John L. Sturtevant
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Production-ready 4-kHz ArF laser for 193-nm lithography
Author(s): Choonghoon Oh; Vladimir B. Fleurov; Thomas Hofmann; Thomas P. Duffey; F. Trintchouk; Patrick O'Keeffe; Peter C. Newman; Gerry M. Blumenstock
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Resolution enhancement of 157-nm lithography by liquid immersion
Author(s): Michael Switkes; Mordechai Rothschild
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Solutions for printing sub-100-nm contacts with ArF
Author(s): Paul Graeupner; Aksel Goehnermeier; Martin Lowisch; Reiner B. Garreis; Donis G. Flagello; Steven G. Hansen; Robert John Socha; Carsten Koehler
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High-NA ArF lithography for 70-nm technologies
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Spatial dispersion in CaF2 caused by the vicinity of an excitonic bound state
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