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Proceedings of SPIE Volume 4690

Advances in Resist Technology and Processing XIX
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Volume Details

Volume Number: 4690
Date Published: 24 July 2002
Softcover: 130 papers (1296) pages
ISBN: 9780819444363

Table of Contents
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Photoresists for microlithography, or The Red Queen's Race
Author(s): Ralph R. Dammel
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Patterning biomolecules and cells: an upside-down microlithography
Author(s): Dan V. Nicolau
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Aliphatic platforms for the design of 157-nm chemically amplified resists
Author(s): Hiroshi Ito; Hoa D. Truong; Masaki Okazaki; Dolores C. Miller; Nicolette Fender; Gregory Breyta; Phillip J. Brock; Gregory M. Wallraff; Carl E. Larson; Robert D. Allen
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High-resolution fluorocarbon-based resist for 157-nm lithography
Author(s): Theodore H. Fedynyshyn; William A. Mowers; Roderick R. Kunz; Roger F. Sinta; Michael Sworin; Russell B. Goodman
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Novel fluoro copolymers for 157-nm photoresists: a progress report
Author(s): Christoph Hohle; Stefan Hien; Christian Eschbaumer; Joerg Rottstegge; Michael Sebald
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Factors influencing the properties of fluoropolymer-based resists for 157-nm lithography
Author(s): Gary N. Taylor; Cheng-Bai Xu; Gary Teng; JoAnne Leonard; Charles R. Szmanda; William Lawrence; Sassan Nur; Kirk W. Brown; Al Stephen
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Advances in resists for 157-nm microlithography
Author(s): Brian C. Trinque; Brian Philip Osborn; Charles R. Chambers; Yu-Tsai Hsieh; Schuyler Boon Corry; Takashi Chiba; Raymond Jui-Pu Hung; Hoang Vi Tran; Paul Zimmerman; Daniel Miller; Will Conley; C. Grant Willson
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Dissolution inhibitors for 157-nm microlithography
Author(s): Will Conley; Daniel A. Miller; Charles R. Chambers; Brian Philip Osborn; Raymond Jui-Pu Hung; Hoang Vi Tran; Brian C. Trinque; Matthew J. Pinnow; Takashi Chiba; Scott McDonald; Paul Zimmerman; Ralph R. Dammel; Andrew R. Romano; C. Grant Willson
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Synthesis of novel fluoropolymers for 157-nm photoresists by cyclopolymerization
Author(s): Shun-ichi Kodama; Isamu Kaneko; Yoko Takebe; Shinji Okada; Yasuhide Kawaguchi; Naomi Shida; Seiichi Ishikawa; Minoru Toriumi; Toshiro Itani
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Highly transparent resist platforms for 157-nm microlithography: an update
Author(s): Vaishali Raghu Vohra; Katsuji Douki; Young-Je Kwark; Xiang-Qian Liu; Christopher Kemper Ober; Young C. Bae; Will Conley; Daniel Miller; Paul Zimmerman
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Negative photoresist for 157-nm microlithography; a progress report
Author(s): Will Conley; Brian C. Trinque; Daniel A. Miller; Paul Zimmerman; Takanori Kudo; Ralph R. Dammel; Andrew R. Romano; C. Grant Willson
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Cycloolefin/cyanoacrylate (COCA) copolymers for 193-nm and 157-nm lithography
Author(s): Ralph R. Dammel; Raj Sakamuri; Sang-Ho Lee; Dalil Rahman; Takanori Kudo; Andrew R. Romano; Larry F. Rhodes; John-Henry Lipian; Cheryl Hacker; Dennis A. Barnes
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Novel alicyclic polymers having 7,7-dimethyloxepan-2-one acid labile groups for ArF lithography
Author(s): Jae-Jun Lee; Jin-Baek Kim; Kenji Honda
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New approach for 193-nm resist using modified cycloolefin resin
Author(s): Joo Hyeon Park; Dong-Chul Seo; Chang-Min Kim; Young Tak Lim; Seong Duk Jo; Jong-Bum Lee; Hyeon Sang Joo; Hyun Pyo Jeon; Seong-Ju Kim; Jae Chang Jung; Ki-Soo Shin; Keun-Kyu Kong; Tatsuya Yamada
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High-performance 193-nm resist composition using hybrid copolymers of cycloolefin/maleic anhydride (COMA)/methacrylate
Author(s): Dalil Rahman; Eric L. Alemy; Will Conley; Daniel Miller; Ralph R. Dammel; Woo-Kyu Kim; Takanori Kudo; Sang-Ho Lee; Seiya Masuda; Douglas S. McKenzie; Munirathna Padmanaban
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Macrocycle monomer having ethyleneoxy unit to buffer acid diffusion (new base for photoresist)
Author(s): Geunsu Lee; Keun-Kyu Kong; Jae Chang Jung; Ki-Soo Shin; Jae-Hyun Kang; Sang-Don Kim; Yong-Jun Choi; Se-Jin Choi; Deog-Bae Kim; Jae-Hyun Kim
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Investigation of lithographic performance for 120-nm and sub-120-nm gate applications of advanced ArF resists based on VEMA co-polymers
Author(s): Robert J. Kavanagh; George W. Orsula; Marie Hellion; George G. Barclay; Stefan Caporale; Nick Pugliano; James W. Thackeray; Benedicte P. Mortini
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Illumination, acid diffusion, and process optimization considerations for 193-nm contact hole resists
Author(s): Takanori Kudo; Eric L. Alemy; Ralph R. Dammel; Woo-Kyu Kim; Sang-Ho Lee; Seiya Masuda; Douglas S. McKenzie; Dalil Rahman; Andrew R. Romano; Munirathna Padmanaban; Jun-Sung Chun; Jae Chang Jung; Sung-Koo Lee; Ki-Soo Shin; Hyeong-Soo Kim
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Characterization and acid diffusion measurements of new strong acid photoacid generators
Author(s): Gregory M. Wallraff; Carl E. Larson; Nicolette Fender; Blake Davis; David R. Medeiros; Jeff Meute; William M. Lamanna; Mike J. Parent; T. Robeledo; Gregory L. Young
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Perflourosulfonyl imides and methides: investigating the lithographic potential of novel superacid PAGs
Author(s): DongKwan Lee; Xiaoming Ma; William M. Lamanna; Georg Pawlowski
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Transparency vs. efficiency in 193-nm photoacid generator design
Author(s): Gerd Pohlers; Yasuhiro Suzuki; Nicholas Chan; James F. Cameron
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Fluoropolymer resists for 157-nm lithography
Author(s): Minoru Toriumi; Naomi Shida; Hiroyuki Watanabe; Tamio Yamazaki; Seiichi Ishikawa; Toshiro Itani
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New 157-nm resist platform based on etching model for fluoropolymers
Author(s): Shinji Kishimura; Masayuki Endo; Masaru Sasago
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Amine gradient process for 157-nm lithography
Author(s): Jae Chang Jung; Keun-Kyu Kong; Young-Sun Hwang; Kyu-Dong Park; Sung-Koo Lee; Geunsu Lee; Jin-Soo Kim; Ki-Soo Shin
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Pattern transfer processes for 157-nm lithography
Author(s): Seiro Miyoshi; Takamitsu Furukawa; Hiroyuki Watanabe; Shigeo Irie; Toshiro Itani
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Synthesis and characterization of photodefinable polycarbonates for use as sacrificial materials in the fabrication of microfluidic devices
Author(s): Celesta E. White; Clifford L. Henderson
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Maleimide-based tetrapolymers for use in lift-off resists
Author(s): Cindy X. Chen; Rodney J. Hurditch; Donald W. Johnson; Daniel J. Nawrocki
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Ultra-thick lithography for advanced packaging and MEMS
Author(s): Chad Brubaker; Rafiqul Islam; Helge Luesebrink
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Integration of UTR processes into MPU IC manufacturing flows
Author(s): Jonathan L. Cobb; S. Dakshina-Murthy; Colita Parker; Eric Luckowski; Arturo M. Martinez; Richard D. Peters; Wei Wu; Scott Daniel Hector
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Development and characterization of 193-nm ultra-thin resist process
Author(s): Gilles R. Amblard; Richard D. Peters; Jonathan L. Cobb; Kunishige Edamatsu
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Characterization of the polymer-developer interface in 193-nm photoresist polymers and formulations during dissolution
Author(s): Thomas I. Wallow; Wendy Chan; William D. Hinsberg; Seok-Won Lee
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Measurement of the spatial evolution of the deprotection reaction front with nanometer resolution using neutron reflectometry
Author(s): Eric K. Lin; Christopher L. Soles; Dario L. Goldfarb; Brian C. Trinque; Sean D. Burns; Ronald L. Jones; Joseph L. Lenhart; Marie Angelopoulos; C. Grant Willson; Sushil K. Satija; Wen-li Wu
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Effect of humidity on deprotection kinetics in chemically amplified resists
Author(s): Sean D. Burns; David R. Medeiros; Heather F. Johnson; Gregory M. Wallraff; William D. Hinsberg; C. Grant Willson
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Surface properties and topography of 193-nm resist after exposure and development
Author(s): Odo Wunnicke; Anja Hennig; Karina Grundke; Manfred Stamm; Guenther Czech
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Chain conformation in ultrathin polymer films
Author(s): Ronald L. Jones; Christopher L. Soles; Francis W. Starr; Eric K. Lin; Joseph L. Lenhart; Wen-li Wu; Dario L. Goldfarb; Marie Angelopoulos
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High numerical aperture: imaging implications for chemically amplified photoresists
Author(s): Martha I. Sanchez; Frances A. Houle; John A. Hoffnagle; Timothy A. Brunner; William D. Hinsberg
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Effects of image contrast and resist types upon line edge roughness (LER)
Author(s): Mike V. Williamson; Xiaofan Meng; Andrew R. Neureuther
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Resist vector: connecting the aerial image to reality
Author(s): Steven G. Hansen
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Mesoscale simulation of positive tone chemically amplified photoresists
Author(s): Gerard M. Schmid; Sean D. Burns; Michael D. Stewart; C. Grant Willson
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Challenges of 50-nm gate process in alternating phase shifting lithography
Author(s): Cheng Yu Fang; Kuei-Chun Hung; Z. H. Huang; Benjamin Szu-Min Lin; Shu-Hao Hsu; Yeong-Song Yen; Paul P.W. Yen; Jiunn-Ren Huang; Hua-Yu Liu
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Evolution of a 193-nm bilayer resist for manufacturing
Author(s): Ranee W. Kwong; Mahmoud Khojasteh; Margaret C. Lawson; Timothy Hughes; Pushkara Rao Varanasi; William R. Brunsvold; Robert D. Allen; Phillip J. Brock; Ratnam Sooriyakumaran; Hoa D. Truong; Arpan P. Mahorowala; David R. Medeiros
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Designing photoresist systems for CO2-based microlithography
Author(s): Devin Flowers; Erik N. Hoggan; Ruben G. Carbonell; Joseph M. DeSimone
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Dissolution rate measurements for resist processing in supercritical carbon dioxide
Author(s): Victor Quan Pham; Gina L. Weibel; Nagesh G. Rao; Christopher Kemper Ober
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Applicaton of blends and side chain Si-O copolymers as high-etch-resistant sub-100-nm e-beam resists
Author(s): Wu-Song Huang; Ranee W. Kwong; Wayne M. Moreau; Robert Lang; David R. Medeiros; Karen E. Petrillo; Arpan P. Mahorowala; Marie Angelopoulos; Qinghuang Lin; Junyan Dai; Christopher Kemper Ober
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Sensitivity factors of CAR electron-beam resists
Author(s): David R. Medeiros; Karen E. Petrillo; Gregory Breyta; Wu-Song Huang; Wayne M. Moreau
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Polysulfone-novolac resist for electron-beam lithography: II. effects of resist formulation and processing
Author(s): Ankur Agrawal; Clifford L. Henderson
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Fluorinated dissolution inhibitors for 157-nm lithography
Author(s): Alyssandrea H. Hamad; Young C. Bae; Xiang-Qian Liu; Christopher Kemper Ober; Francis M. Houlihan; Gary Dabbagh; Anthony E. Novembre
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Dry-etch resistance of fluorine functionalized polymers
Author(s): Meiten Koh; Takuji Ishikawa; Takayuki Araki; Hirokazu Aoyama; Tsuneo Yamashita; Tamio Yamazaki; Hiroyuki Watanabe; Minoru Toriumi; Toshiro Itani
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157-nm single-layer resists based on advanced fluorinated polymers
Author(s): Naomi Shida; Hiroyuki Watanabe; Tamio Yamazaki; Seiichi Ishikawa; Minoru Toriumi; Toshiro Itani
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Fluorocarbon-based single-layer resist for 157-nm lithography
Author(s): Ki-Yong Song; Kwang-Sub Yoon; Sang-Jun Choi; Sang-Gyun Woo; Woo-Sung Han; Jae-Jun Lee; Sang-Kyun Lee; Chang-Ho Noh; Kenji Honda
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Ultrathin film imaging at 157 nm
Author(s): Joerg Rottstegge; Waltraud Herbst; Stefan Hien; Gerald Fuetterer; Christian Eschbaumer; Christoph Hohle; Johannes Schwider; Michael Sebald
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Progress in 157-nm resist performance and potential
Author(s): Patrick Wong; Stephan Sinkwitz; Steven G. Hansen; Anne-Marie Goethals; Will Conley
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Investigation of a fluorinated ESCAP-based resist for 157-nm lithography
Author(s): Sungseo Cho; Axel Klauck-Jacobs; Shintaro Yamada; Cheng-Bai Xu; JoAnne Leonard; Anthony Zampini
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Implementation of the ArF resists based on VEMA for sub-100-nm device
Author(s): Hyun-Woo Kim; Sook Lee; Sang-Jun Choi; Sung-Ho Lee; Yool Kang; Sang-Gyun Woo; Dongseok Nam; Yun-Sook Chae; Jisoo Kim; Joo-Tae Moon; Robert J. Kavanagh; George G. Barclay
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Performance of vinyl ether cross-linkers on resist for 193-nm lithography
Author(s): JongSoo Lee; Hideo Suzuki; Keisuke Odoi; Nobukazu Miyagawa; Shigeru Takahara; Tsuguo Yamaoka
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Molecular resists with t-butyl cholate as a dendrimer core
Author(s): Jin-Baek Kim; Tae Hwan Oh; Young-Gil Kwon
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Application of diluted developer solution (DDS) process to 193-nm photolithography process
Author(s): Keiichi Tanaka; Hiroyuki Iwaki; Yoshiaki Yamada; Yukio Kiba; Shigenori Kamei; Kazuyuki Goto
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100 nm device fabrication using ArF resist
Author(s): Sung-Koo Lee; Jae Chang Jung; Young-Sun Hwang; Kyu-Dong Park; Jin-Soo Kim; Keun-Kyu Kong; Ki-Soo Shin
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Contact hole patterning performance of ArF resist for 0.10 um technology node
Author(s): Jin-Soo Kim; Jae Chang Jung; Keun-Kyu Kong; Geunsu Lee; Sung-Koo Lee; Young-Sun Hwang; Ki-Soo Shin
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Importance of resist transparency and development rate control in via-first dual damascene processes
Author(s): Seiji Nagahara; Masashi Fujimoto; Mitsuharu Yamana; Takeo Hashimoto
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Stable E-beam metrology on ArF resist for advanced process control
Author(s): Chih-Ming Ke; Anthony Yen; Jason C. Yee; Mico Chu; Steven Fu; Eros Huang; Debbie Yeh
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E-beam curing effects on the etch and CD-SEM stability of 193-nm resists
Author(s): Munirathna Padmanaban; Eric L. Alemy; Ralph R. Dammel; Woo-Kyu Kim; Takanori Kudo; Sang-Ho Lee; Douglas S. McKenzie; Aldo Orsi; Dalil Rahman; Wan-Lin Chen; Reza M. Sadjadi; William R. Livesay; Matthew F. Ross
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Newly developed acrylic copolymers for ArF photoresist
Author(s): Yoshihiro Kamon; Hikaru Momose; Hideaki Kuwano; Tadayuki Fujiwara; Masaharu Fujimoto
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Tandem type resin for chemically amplified KrF positive resist
Author(s): Yasunori Uetani; Masumi Suetsugu; Koichiro Ochiai; Airi Yamada; Ryotaro Hanawa; Nobuo Ando
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Synergic effect of acetal-based resin by blending with poly[4-hydroxy styrene-co-tert-butyl acrylate-co-4-(3-cyano-1,5-di-tert-butyl carbonyl pentyl styrene (P(HS-TBA-CBPS)) on the profiles of 248 n
Author(s): Hyun-Jin Kim; Yoon-Sik Chung; Dong Hwal Lee; Sook Hee Cho; Kwang Hwyi Im; Yun-Gill Yim; Deog-Bae Kim; Jae-Hyun Kim
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Insertion effects of various acid sensitive groups into acetal-type polymer on the profile of 248-nm chemically amplified resist
Author(s): Yoon-Sik Chung; Hyun-Jin Kim; Sook Hee Cho; Dong Hwal Lee; Kwang Hwyi Im; Yun-Gill Yim; Deog-Bae Kim; Jae-Hyun Kim
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70-nm contact hole pattern with shrink technology
Author(s): Lin-Hung Shiu
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Defect density control on "satellite spots" or chemical stains for deep-UV resist process
Author(s): Luke Kok Chin Ng; Hui Kow Lim
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Evaluation of resist-film property for CD control
Author(s): Hiroshi Shinya; Takahiro Kitano; Hidefumi Matsui; Junichi Kitano
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Effect of developer surfactant on lithography process latitudes and post pattern defect concentration
Author(s): Moitreyee Mukherjee-Roy; Ngooi Siew Wei; Rakesh Kumar; Satoshi Kawada
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Method to improve the throughput and retain the CD performance for DUV process
Author(s): Yung-Tsung Hsiao; Ta-Chung Liu; Lee-Jean Chiu; Chih-You Chen; Chin-Yu Ku
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Effect of delay time on the performance of DUV resist for various pattern size and shape
Author(s): Dong-Seok Kim; Jong O Park; Byung-Ho Nam; Hoon Huh
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Ultrathin DUV resists for logic applications
Author(s): James W. Thackeray; James F. Cameron; Michael Francis Cronin; Wesley Brykailo; Doris Kang
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Methods for comparing contact hole shrinking techniques with 248-nm single layer and bilayer photoresists
Author(s): Karen E. Petrillo; John P. Simons; Ronald DellaGuardia
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Optimizing CD uniformity by total PEB cycle temperature control on track equipment
Author(s): Akihiro Hisai; Koji Kaneyama; Charles N. Pieczulewski
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Reflow process stabilization by chemical characteristics and process conditions
Author(s): Myoung-Soo Kim; Jeong-Hyun Park; Hak-Joon Kim; Il-Hyung Kim; Jae-Ha Jeon; Myung-Goon Gil; Bong-Ho Kim
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Material and process development of tri-level resist system in KrF and ArF lithography
Author(s): Tsuyoshi Shibata; Seiji Nakagawa; Yasuhiko Sato; Koutaro Sho; Hisataka Hayashi; Junko Abe
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Novel development method for CD control: optimized spin-off development method
Author(s): Kazuo Sakamoto; Akira Nishiya; Kentarou Yamamura; Takahisa Otsuka
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Contact hole resolution enhancement by post exposure amine treatment (CONPEAT) process
Author(s): Cha-Won Koh; Jin-Soo Kim; Chang-Il choi; Tae-Seung Eom; Won-Taik Kwon; Jae Chang Jung; Cheol-Kyu Bok; Ki-Soo Shin
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Novel photoacid generators for chemically amplified resists
Author(s): Hitoshi Yamato; Toshikage Asakura; Akira Matsumoto; Masaki Ohwa
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Trace metal removal from microlithography process chemicals: Part I. photoresist solvents
Author(s): Hsiao-Show Mike Tseng; Xiaoping Ling
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New ionic photo-acid generators (PAGs) incorporating novel perfluorinated anions
Author(s): William M. Lamanna; Carl R. Kessel; Pat M. Savu; Yuri Cheburkov; Steve Brinduse; Thomas A. Kestner; Gerald J. Lillquist; Mike J. Parent; Karrie S. Moorhouse; Yifan Zhang; Grant Birznieks; Terry Kruger; Michael C. Pallazzotto
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Improvement of line edge roughness by employing new PAG
Author(s): Yang-Sook Kim; Yun-Hyi Kim; Sang-Hyang Lee; Yun-Gill Yim; Deog-Bae Kim; Jae-Hyun Kim
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Novel molecular resists based on inclusion complex of cyclodextrin
Author(s): Jin-Baek Kim; Young-Gil Kwon; Hyo-Jin Yun; Jae-Hak Choi
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High resolution negative i-line resist and process for metal lift-off applications
Author(s): Medhat A. Toukhy; Salem K. Mullen; Ping-Hung Lu; Mark Neisser
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Microfabrication of hydrogels for biomedical applications
Author(s): Tianyue Yu; Federica Chiellini; Dirk Schmaljohan; Roberto Solaro; Christopher Kemper Ober
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Improved resolution of thick film resist: effect of development technique
Author(s): Yoshihisa Sensu; Atsushi Sekiguchi; Yasuhiro Miyake
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Selected implications of photoresist processing in 300mm manfacturing
Author(s): Kay Lederer; Steffen R. Hornig; Ralf Schuster
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Dissolution characteristics of resist polymers studied by quartz crystal microbalance transmission-line analysis and pKa acidity analysis
Author(s): Minoru Toriumi; Toshiro Itani; Jun Yamashita; Tomomi Sekine; Kiyoharu Nakatani
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Quantitative description of phenolic polymer dissolution using the concept of gel layer: II. base cation size effect
Author(s): Joon Yeon Cho; Se-Jin Choi
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Generation mechanism of surface roughness in resists: free volume effect on surface roughness
Author(s): Toru Yamaguchi; Hideo Namatsu
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Behavior and control of resist dissolution in the development process
Author(s): Yoshifumi Takai; James Mulhall; Kosuke Yoshihara; Hideharu Kyoda; Hirofumi Takeguchi
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Measuring thermophysical properties of ultrathin photoresist films
Author(s): James N. D'Amour; Curtis W. Frank; Uzodinma Okoroanyanwu
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Acid mobility in chemically amplified photoresists
Author(s): Michael D. Stewart; Darren J. Becker; Timothy B. Stachowiak; Gerard M. Schmid; Timothy B. Michaelson; Hoang Vi Tran; C. Grant Willson
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Calibration of ESCAP resist simulation parameters from consideration of printed CD pitch bias, CD measurement offset and wafer thermal history
Author(s): Stewart A. Robertson; Doris Kang; Steven D. Tye; Steven G. Hansen; Anita Fumar-Pici; Tsann-Bim Chiou; Jeff D. Byers; Chris A. Mack; Mark D. Smith
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Measuring and simulating postexposure bake temperature effects in chemically amplified photoresists
Author(s): Doris Kang; Stewart A. Robertson
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Resist develop prediction by Monte Carlo simulation
Author(s): Dong-Soo Sohn; Kyoung-Ah Jeon; Young-Soo Sohn; Hye-Keun Oh
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Verification of a high-resolution PEB parameter extraction methodology based on double exposure technique
Author(s): Lei Yuan; Andrew R. Neureuther
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Parameter extraction for 157-nm photoresists
Author(s): Joseph J. Bendik; Will Conley; Daniel A. Miller; Paul Zimmerman; Kim R. Dean; John S. Petersen; Jeff D. Byers
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Impact of isofocal bias on MEEF management
Author(s): Colin R. Parker; Michael T. Reilly
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Novel surface silylation process for chemically amplified photoresist
Author(s): Sung-Ho Lee; Jin Hong; Sang-Gyun Woo; Hang-Goo Cho; Woo-Sung Han
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Nanostructure patterns for Shipley SPR505A resist using PRIME process
Author(s): Khalil I. Arshak; Miroslav Mihov; Arousian Arshak; Declan McDonagh; Michael Pomeroy; Simon Newcomb
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Novel surface imaging method using surface monolayer initiated polymerization
Author(s): Kendra McCoy; Charles Gumieny; Dennis W. Hess; Laren M. Tolbert; Clifford L. Henderson
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Novel bilayer resist approach using radiation sensitive organometalics precursors
Author(s): Augustin Jeyakumar; Sean Jeffrey Barstow; Clifford L. Henderson
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Processing techniques for novel BARC chemistries
Author(s): Nickolas L. Brakensiek; Chris Cox; Rama Puligadda
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Bottom anti-reflective coatings: fluid property characterization and wetting tendency
Author(s): Owen J. Hehmeyer; Abhishek Singh; Ramkumar Subramanian; Joffre Bernard
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Design considerations for bottom antireflective coating for 157 nm lithography
Author(s): James B. Claypool; Rama Puligadda; Jill Akers; Rikimaru Sakamoto; Kenichi Mizusawa
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Thin organic bottom antireflective coatings for 193 nm lithography
Author(s): Mandar Bhave; James D. Meador; James B. Claypool; Shreeram V. Deshpande; Jill Akers; Anne Lindgren
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Multi-layer bottom antireflective coating structures for high NA ArF exposure system applications
Author(s): Hsuen-Li Chen; W. D. Fan; Tzyy-Jiann Wang; Tiao-Yuan Huang
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Development of bottom antireflective coating for high-resolution KrF lithography
Author(s): Yoon-Ho Kang; Chang-Il Oh; Sung Kook Song; Deog-Bae Kim; Jae-Hyun Kim
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Optimization of organic bottom antireflective coatings' compatibility with ArF resists
Author(s): Zhong Xiang; Jianhui Shan; Eleazar Gonzalez; Hengpeng Wu; Shuji Ding; Mark Neisser; Bang-Chein Ho; Harrison Chen
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Development of 193-nm B.A.R.C.s for dual damascene applications
Author(s): Hengpeng Wu; Zhong Xiang; Eleazar Gonzalez; Jianhui Shan; Shuji Ding; Wen-Bing Kang; Aritaka Hishida
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Characterization and improvement of resist pattern collapse on ArF (193 nm) organic B.A.R.C.
Author(s): Young-Sun Hwang; Jae Chang Jung; Kyu-Dong Park; Sung-Koo Lee; Jin-Soo Kim; Keun-Kyu Kong; Ki-Soo Shin; Shuji Ding; Zhong Xiang; Mark Neisser
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Modeling of acid catalyzed resists with electron beam exposure
Author(s): Theodore H. Fedynyshyn; Jason R. Gillman; Russell B. Goodman; Theodore M. Lyszczarz; Steven J. Spector; Donna Lennon; Sandy Denault; Robert H. Bates
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Polysulfone-novolac resist for electron beam lithography: part I. fundamental studies of resist properties
Author(s): Ankur Agrawal; Clifford L. Henderson
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Sub-100 nm T-gates utilizing a single E-beam lithography exposure process
Author(s): Eric S. Ainley; Scott Ageno; Kevin J. Nordquist; Douglas J. Resnick
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Negative-tone CAR resists for e-beam lithography: modification of chemical composition for R&D application (high resolution) or production application (high sensitivity)
Author(s): Murielle Charpin; Laurent Pain; Serge V. Tedesco; C. Gourgon; A. Andrei; Daniel Henry; Yves LaPlanche; Ryotaro Hanawa; Tadashi Kusumoto; Masumi Suetsugu; H. Yokoyama
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Hydrogen silsesquioxane bilayer resist process for low-voltage electron beam lithography
Author(s): Andrew Thomas Jamieson; C. Grant Willson; Yautzong Hsu; Alan D. Brodie
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Design of experiments optimization of PMMA for LIGA applications
Author(s): Laurence Singleton; Rainer Schenk; Oliver Haverbeck; Abdi Tunayer; Anja Himmelsbach; Christiana Krempel; Peter Detemple; Manfred Lachar
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Organoelement resists for EUV lithography
Author(s): Junyan Dai; Christopher Kemper Ober; Lin Wang; Franco Cerrina; Paul F. Nealey
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Characterization of a novel photoresist redistribution material for advanced packaging applications
Author(s): Warren W. Flack; Ha-Ai Nguyen; Elliott Sean Capsuto
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Spin coating and photolithography using liquid and supercritical carbon dioxide
Author(s): Erik N. Hoggan; Devin Flowers; Joseph M. DeSimone; Ruben G. Carbonell
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Fullerene incorporation in DNQ Novolak photoresist for increasing plasma etch resistance
Author(s): J. David Benson; Andrew J. Stoltz; Andrew W. Kaleczy; John H. Dinan
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Bi/In bimetallic thermal resists for microfabrication, photomasks, and micromachining applications
Author(s): Glenn H. Chapman; Richard Yuqiang Tu; Marinko V. Sarunic
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Novel approach for high resolution using cycloolefin-alt-maleic acid derivatives polymer for ArF lithography
Author(s): Jong-Bum Lee; Joo Hyeon Park; Dong-Chul Seo; Chang-Min Kim; Young Tak Lim; Seung-duk Cho; Hyun-Sang Joo; Hyun Pyo Jeon; Seong-Ju Kim
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Building high-performance chemically amplified resists with polymer blends
Author(s): Qinghuang Lin; John P. Simons; Marie Angelopoulos; Ratnam Sooriyakumaran
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100-nm generation contact patterning by low temperature 193-nm resist reflow process
Author(s): Veerle Van Driessche; Kevin Lucas; Frieda Van Roey; Grozdan Grozev; Plamen Tzviatkov
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Collapse behavior of single layer 193- and 157-nm resists: use of surfactants in the rinse to realize the sub-130-nm nodes
Author(s): Stefan Hien; Georgia K. Rich; Gilbert Molina; Heidi B. Cao; Paul F. Nealey
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Successful photoresist removal: incorporating chemistry, conditions, and equipment
Author(s): John C. Moore
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Single molecular lithography using polystyrene (MW:2000)
Author(s): M. Suzuki; Shinzo Morita
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