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Proceedings of SPIE Volume 4689

Metrology, Inspection, and Process Control for Microlithography XVI
Editor(s): Daniel J. C. Herr
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Volume Details

Volume Number: 4689
Date Published: 16 July 2002
Softcover: 124 papers (1264) pages
ISBN: 9780819444356

Table of Contents
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Future of e-beam metrology: obstacles and opportunities
Author(s): David C. Joy
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Three-dimensional modeling of wafer inspection schemes for sub-70-nm lithography
Author(s): Zhengrong Zhu; Aaron L. Swecker; Andrzej J. Strojwas
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Defect printability analysis study using virtual stepper system in a production environment
Author(s): Shao-Yung Chiou; Henrry Lei; WeiJyh Liu; M. J. Chu; Daryl Chiang; Steve Tuan; Chia-Lung Hong; Michael Chang; Jiunn-Hung Chen; Kevin K. Chan; Qi-De Qian; Lynn Cai; Linyong Pang
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DUV optical metrology for the 90-nm node, CD linearity, contacts, and corner rounding
Author(s): Louis M. Chacon; Nicholas G. Doe; Richard D. Eandi; Patrick St. Cin
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Contamination inspection of embedded phase-shift masks
Author(s): Aditya Dayal; Peter Sanchez; Florence O. Eschbach; Adelina Vargas; Jun Kim
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Using carbon nanotube cantilevers in scanning probe metrology
Author(s): Rudy Schlaf; Yusuf Emirov; Jay A. Bieber; Arun Sikder; J. Kohlscheen; Deron A. Walters; Mohammed R. Islam; Bhavik Metha; Z. F. Ren; Terri L. Shofner; Benjamin B. Rossie; Michael W. Cresswell
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Carbon nanotube scanning probe for surface profiling of DUV and 193-nm photoresist pattern
Author(s): Cattien V. Nguyen; Ramsey M.D. Stevens; Jabulani Barber; Jie Han; Meyya Meyyappan; Martha I. Sanchez; Carl E. Larson; William D. Hinsberg
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New developments in excimer laser metrology at 157 nm
Author(s): Marla L. Dowell; Richard D. Jones; Holger Laabs; Christopher L. Cromer; Robert D. Morton
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High-resolution photomask transmission and phase measurement tool
Author(s): Jim J. Jacob; Tim Litvin; Andrew J. Merriam
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Development of a dual-probe Caliper CD-AFM for near model-independent nanometrology
Author(s): Vladimir Mancevski; Paul F. McClure
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193-nm CD shrinkage under SEM: modeling the mechanism
Author(s): Andrew Habermas; Dongsung Hong; Matthew F. Ross; William R. Livesay
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Benchmarking of advanced CD-SEMs at the 130-nm CMOS technology node
Author(s): Benjamin D. Bunday; Michael Bishop
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CD reference materials for sub-10th um applications
Author(s): Michael W. Cresswell; E. Hal Bogardus; J.V. Martinez de Pinillos; Marylyn Hoy Bennett; Richard A. Allen; William F. Guthrie; Christine E. Murabito; Barbara A. am Ende; Loren W. Linholm
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Determination of DICD best focus by top-down CD-SEM
Author(s): Wenzhan Zhou; Hui Kow Lim; Teng Hwee Ng
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Quantitative profile-shape measurement study on a CD-SEM with application to etch-bias control
Author(s): Benjamin D. Bunday; Michael Bishop; Marylyn Hoy Bennett; John R. Swyers; Zipora Haberman-Golan
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Mathematical analyses of inverse scatterometry
Author(s): Emmanuel M. Drege; Rayan M. Al-Assaad; Dale M. Byrne
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Feature shape variation using scatterometry
Author(s): Patrick Schiavone; Vincent Farys; Andre Michallet
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Scatterometry: interpretation by different methods of electromagnetic simulation
Author(s): Vladimir Machavariani; Shahar Garber; Yoel Cohen
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Spectral scatterometry for 2D trench metrology of low-K dual-damascene interconnect
Author(s): Vladimir A. Ukraintsev; Mak Kulkarni; Christopher C. Baum; Karen Kirmse; Marco Guevremont; Suresh Lakkapragada; Kamal N. Bhatia; Pedro P. Herrera; Umar K. Whitney
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Complementary use of scatterometry and SEM for photoresist profile and CD determination
Author(s): Yuya Toyoshima; Isao Kawata; Yasutsugu Usami; Yasuhiro Mitsui; Apo Sezginer; Eric Maiken; Kin-Chung Chan; Kenneth Johnson; Dean Yonenaga
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Modeling resist heating in mask fabrication using a multilayer Green's function approach
Author(s): Dachen Chu; R. Fabian W. Pease; Kenneth E. Goodson
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Novel polychromatic measurement technique for determining the dissolution rate of very thin resist films
Author(s): Stewart A. Robertson; Doris Kang; Steven A. Scheer; Colin J. Brodsky
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Overlay metrology results on leading-edge Cu processes
Author(s): Vincent Vachellerie; Delia Ristoiu; Alain G. Deleporte; Pierre-Olivier Sassoulas; Philippe Spinelli; Marc Poulingue; Pascal Fabre; Rolf Arendt; Ganesh Sundaram; Paul C. Knutrud
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Metrology of optical constants for sub-200-nm lithographic films
Author(s): Michael J. Anderson; Eileen Clifford
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Combined level-to-level and within-level overlay control
Author(s): Christopher P. Ausschnitt; Jaime D. Morillo; Roger J. Yerdon
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Overlay tool comparison for sub-130-nm technologies
Author(s): Beth Russo; Michael Bishop; David C. Benoit; Richard M. Silver
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Overlay accuracy: a metal layer study
Author(s): Andrew Habermas; Bradley A. Ferguson; Joel L. Seligson; Elyakim Kassel; Pavel Izikson
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Influence of coma effect on scanner overlay
Author(s): Jieh-Jang Chen; Chen-Ming Huang; Fan-Jia Shiu; Ching-Sen Kuo; S. C. Fu; C. T. Ho; Chung Wang; J. H. Tsai
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Evaluation of ASML ATHENA alignment system on Intel front-end processes
Author(s): Graham M. Pugh; Maria Rebecca Giorgi
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Overlay metrology simulations
Author(s): Joel L. Seligson; Michael Friedmann; Boris Golovanevsky; Vladimir Levinsky
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Scanning electron microscope analog of scatterometry
Author(s): John S. Villarrubia; Andras E. Vladar; Jeremiah R. Lowney; Michael T. Postek
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Toward traceability for at-line AFM dimensional metrology
Author(s): Ronald G. Dixson; Angela Guerry; Marylyn Hoy Bennett; Theodore V. Vorburger; Michael T. Postek
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Evaluating the resolution of a CD-SEM
Author(s): Ira J. Rosenberg
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Amplitude and spatial frequency characterization of line-edge roughness using CD-SEM
Author(s): Guy Eytan; Ophir Dror; Laurent Ithier; Brigitte Florin; Zakir Lamouchi; Nadine Martin
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Ultrafast wafer alignment simulation based on thin film theory
Author(s): Qiang Wu; Gary Williams; Byeong Y. Kim; Jay Strane; Timothy J. Wiltshire; Eric A. Lehner; Hiroyuki Akatsu
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Optimization of overlay markers to limit the measurement error induced during exposure by lens aberration effects
Author(s): Alberto Luci; Eugenio Guido Ballarin
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Overlay accuracy in 0.18-micron copper dual-damascene process
Author(s): Bernd Schulz; Harry J. Levinson; Rolf Seltmann; Joel L. Seligson; Pavel Izikson; Anat Ronen
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Advances in process overlay: ATHENA alignment system performance on critical process layers
Author(s): David W. Laidler; Henry J. L. Megens; Sanjay Lalbahadoersing; Richard J. F. van Haren; Frank Bornebroek
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Comparison of measured optical image profiles of silicon lines with two different theoretical models
Author(s): Richard M. Silver; Ravikiran Attota; M. Stocker; Jau-Shi Jay Jun; Egon Marx; Robert D. Larrabee; Beth Russo; Mark P. Davidson
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Optimum sampling for characterization of systematic variation in photolithography
Author(s): Jason P. Cain; Haolin Zhang; Costas J. Spanos
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Exploring the resolution limits of phase-shift mask lithography with a very high numerical aperture ArF step-and-scan system
Author(s): Harry Sewell; Pankaj Raval; Diane C. McCafferty
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Electronic structure of chromium aluminum oxynitride by DV-Xa method and photoelectron spectroscopy
Author(s): Youngmin Choi; Hyunju Chang; Jae Do Lee; Eunah Kim; Kwangsoo No
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Compact formulation of mask error factor for critical dimension control in optical lithography
Author(s): Haolin Zhang; Jason P. Cain; Costas J. Spanos
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Atomic force microscopy for phase metrology of alternating-aperture phase-shift masks
Author(s): Kirk Miller; Bradley Todd; Tim Pinkerton
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Improving sub-150-nm lithography and etch CD-SEM correlations to AFM and electrical test
Author(s): Eric P. Solecky; Jason Mayer; Charles N. Archie
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Lithographic process window analysis by statistical means
Author(s): Anatoly Bourov; Sergei V. Postnikov; Kevin Lucas
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New AFM imaging for an in-line LSI process monitor
Author(s): Sumio Hosaka; Takafumi Morimoto; Hiroshi Kuroda; Yasushi Minomoto; Yukio Kembo; Hirokazu Koyabu
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Quantification of OPC performance of 150-nm gates using top-down CD-SEM
Author(s): Ashesh Parikh; Haiqing Zhou; Chih-Yu Wang; Craig W. MacNaughton
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Novel implementations of scatterometry for lithography process control
Author(s): Michael E. Littau; Christopher J. Raymond; Christopher J. Gould; Christy Gambill
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Characterizing post-exposure bake processing for transient- and steady-state conditions, in the context of critical dimension control
Author(s): David Ashby Steele; Anthony Coniglio; Cherry Tang; Bhanwar Singh; Steve Nip; Costas J. Spanos
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Productivity enhancements in recipe creation for overlay metrology measurements
Author(s): Vincent Vachellerie; Delia Ristoiu; Alain G. Deleporte; Marc Poulingue; Yannick Bedin; Rolf Arendt; Ganesh Sundaram; Paul C. Knutrud
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Structural characterizaton of deep-submicron lithographic structures using small-angle neutron scattering
Author(s): Eric K. Lin; Ronald L. Jones; Wen-li Wu; John G. Barker; Patrick J. Bolton; George G. Barclay
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Application of intentional defect arrays for assessing wafer inspection tool capabilities
Author(s): Abbie L. Warrick; Amy B. Engbrecht; Richard J. Jarvis
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100-nm-pitch standard characterization for metrology applications
Author(s): Marco Tortonese; Jerry Prochazka; Paul Konicek; Jason Schneir; Ian R. Smith
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Simulation of imaging in projection microscope using multi-beam probe
Author(s): Yeong-Uk Ko; David C. Joy
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Low-voltage-point source microscope for interferometry
Author(s): Bernhard G. Frost; David C. Joy; Alexander Thesen
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Advanced inspection technique for deep-submicron and high-aspect-ratio contact holes
Author(s): Miyako Matsui; Mari Nozoe; Keiko Arauchi; Atsuko Takafuji; Hidetoshi Nishiyama; Yasushi Goto
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Effect of a scanned electron beam on a logic device in an advanced process fab
Author(s): Jeff W. Ritchison; Bill Hinshaw; Kwame Owusu-Boahen
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Low-voltage CD-SEM applications in MEMS devices
Author(s): Susan Redmond; Roger McKay; Mary Mellard; Catherine Norris; Jerry Wonnacott; Martin E. Mastovich
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GaAs wafer overlay performance affected by annealing heat treatment: I
Author(s): Ying Liu; Iain Black
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Microeconomics of advanced process window control for 50-nm gates
Author(s): Kevin M. Monahan; Xuemei Chen; Georges Falessi; Craig Garvin; Matt Hankinson; Amir Lev; Ady Levy; Michael D. Slessor
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Characterization and reduction of highly localized substrate contamination defects in metal patterning
Author(s): Yiming Gu; Anqing Zhang; Zhenjiang Yu; Wanqing Cao; Sean Chen; John L. Sturtevant; Shih-Ked Lee
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Defect analysis in 157-nm photolithography process
Author(s): Yukio Kiba; Shinya Hori; Osamu Miyahara; Yuko Ono; Junichi Kitano; Seiro Miyoshi; Takamitsu Furukawa; Toshiro Itani
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Characterizing cross-sectional profile variations by using multiple parameters extracted from top-down SEM images
Author(s): Chie Shishido; Yuji Takagi; Maki Tanaka; Osamu Komuro; Hidetoshi Morokuma; Katsuhiro Sasada
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Correction method for high-precision CD measurements on electrostatically charged wafers
Author(s): Yoichi Ose; Makoto Ezumi; Tatsuaki Ishijima; Hideo Todokoro; Kouichi Nagai
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Rotating compensator spectroscopic ellipsometry for line-width control
Author(s): Ha-Young Lee; Kyoung-Yoon Bang; Jaeho Lee; Heungin Bak; Young-Soo Sohn; Ilsin An
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Atomic force microscopy with carbon nanotube tip for critical dimension measurement
Author(s): Byong Chon Park; Ki Young Jung; Won Young Song; Beomhoan O; TaeBong Eom
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Shape measurement simulation for the silicon trench array by scattering properties and continuous wavelet analysis with interference spectroscopy
Author(s): Hirokimi Shirasaki
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Metal characterization and process enhancement techniques for photolithographic materials
Author(s): Fu-Hsiang Ko; Hsuen-Li Chen; Chun-Chen Hsu; Tieh-Chi Chu
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Overlay registration target design for wafer-induced shift characterization
Author(s): Albert L. Ihochi; Alan S. Wong
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TIS-WIS interaction characterization on overlay measurement tool
Author(s): Kenji Hoshi; Eiichi Kawamura; Hiroshi Morohoshi; Hideki Ina; Takanori Fujimura; Hiroyuki Kurita; Joel L. Seligson
Show Abstract
CD metrology for avoiding shrinkage of ArF resist patterns in 100 nm ArF lithography
Author(s): Tae-Jun You; Cheol-Kyu Bok; Ki-Soo Shin
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Gate line edge roughness effects in 50-nm bulk MOSFET devices
Author(s): Shiying Xiong; Jeffrey Bokor; Qi Xiang; Philip Fisher; Ian M. Dudley; Paula Rao
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Reducing CD-SEM measurement carryover effect for 193-nm resist processes using CEq
Author(s): Haiqing Zhou; Chih-Yu Wang; Aaron Zuo; Joseph P. Pratt
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CD-SEM calibration with TEM to reduce CD measurement error
Author(s): Chang-Young Jeong; Joohyoung Lee; Ki-Yeop Park; Won Gyu Lee; Dai-Hoon Lee
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Characterization of interfacial layers and surface roughness using spectroscopic reflectance, spectroscopic ellipsometry, and atomic force microscopy
Author(s): Ray J. Hoobler; Rahul Korlahalli; Ed Boltich; Joe Serafin
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Alternative approach for direct APC using scatterometry data
Author(s): Boaz Brill; Yoel Cohen; Igor Turovets; Dario Elyasy; Tzevi Beatus
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Simplified cusum model for automated control of fab processes
Author(s): John Todd Downing; Tracey Sorenson
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Sensitivity of the silicon layer thickness in SOI process in the UV regime
Author(s): Deepak Shivaprasad; Ed Boltich
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Implementing fully automatic macro defect detection and classification system in high-production semiconductor fab
Author(s): Lloyd Lee; Michael Pham; David Pham; Manyam Khaja; Kathleen A. Hennessey; Juanita Miller
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Contamination control methods for gases used in the microlithography process
Author(s): Larry Rabellino; Chuck Applegarth; Giorgio Vergani
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Imaging interferometric microscopy for enhanced resolution
Author(s): Christian J. Schwarz; Yuliya Kuznetsova; Steven R. J. Brueck
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Die-scale wafer flatness: 3D imaging across 20 mm with nanometer-scale resolution
Author(s): Kirk Miller; David H. Fong; Dean J. Dawson; Bradley Todd
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Advanced process control of overlay with optimal sampling
Author(s): Craig Garvin; Xuemei Chen; Matt Hankinson
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Monte Carlo simulation of SEM for target with complex geometry
Author(s): Vadim Manuylov
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New crossbeam inspection tool combining an ultrahigh-resolution field emission SEM and a high-resolution FIB
Author(s): Peter Gnauck; Peter Hoffrogge; Jens Greiser
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Three-dimensional aspects of the shrinking phenomenon of ArF resist
Author(s): Ido Laufer; Giora E. Eytan; Ophir Dror
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Evaluation of lithographic imaging performance by optical area measurement
Author(s): Ilya Grodnensky; Shinji Mizutani; Steve D. Slonaker
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Comparison of ATHENA and TTL alignment capability in product wafers
Author(s): Juliann Opitz; David W. Laidler
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Tip characterization for CD-AFM: getting to 2 nm, 3 sigma
Author(s): Kirk Miller; Ami Chand; Greg Dahlen; Bradley Todd
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Overlay excursion monitoring using SEM image
Author(s): Jeong-Ho Yeo; Kyoung Mo Yang; Jung Soo Kim; Young S. Kang
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Impact on OPC treatment accuracy due to illumination pupil shape deviation for 110-nm target CD
Author(s): Sabita Roy; Ralph E. Schlief; Stephen Hsu; Xuelong Shi; Armin Liebchen; J. Fung Chen; Steven G. Hansen
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Automated SEM metrology of wafers printed using a SCAA mask
Author(s): Sunil Desai; Takeaki Ebihara; David Levenson; Sylvia White
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2D-image-based CD-SEM applications for thin film head metrology
Author(s): Srinath Venkataram; Neeraj Khanna; Sanford Lewis; Gautam Khera
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Environmental control for lithography with 157-nm exposure
Author(s): Junichi Kitano; Yukio Kiba; Kouichiro Inazawa; Seiro Miyoshi; Hiroyuki Watanabe; Takamitsu Furukawa; Toshiro Itani
Show Abstract
Behavior of chemically amplified resist defects in TMAH solution
Author(s): Yuko Ono; Osamu Miyahara; Yukio Kiba; Junichi Kitano
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Improved characteristics of rainbow defects with novel wafer edge exposure technique
Author(s): Kew-Chan Shim; Myoung-Soo Kim; Eung-Sok Lee; Chang-Seong Lee; Chul-Seung Lee; Myung-Goon Gil; Bong-Ho Kim; Jae-Sig In; Tae Bong Yoon; Jai-soon Kim
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Advances in process overlay on 300-mm wafers
Author(s): Jens Staecker; Stefanie Arendt; Karl Schumacher; Evert C. Mos; Richard J. F. van Haren; Maurits van der Schaar; Remi Edart; Wolfgang Demmerle; Hoite Tolsma
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Design of a cost-effective multiwavelength development rate monitoring tool
Author(s): Steven A. Scheer; Colin J. Brodsky; Stewart A. Robertson; Doris Kang
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Comparative investigation of CD-SEM carryover effect
Author(s): Anna K. Chernakova; Brad Miller; Thomas Roy Boonstra; Alan J. Fan
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Spectroscopic CD metrology for sub-100-nm lithography process control
Author(s): Walter D. Mieher; Thaddeus G. Dziura; Xuemei Chen; Paola DeCecco; Ady Levy
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Line-profile and critical-dimension correlation between a normal-incidence optical CD metrology system and SEM
Author(s): Weidong Yang; Roger Lowe-Webb; Rahul Korlahalli; Vera Guorong Zhuang; Hiroki Sasano; Wei Liu; David Mui
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Proximity effect correction optimization considering fogging and loading effects compensation
Author(s): Seung-Hune Yang; Yo-Han Choi; Jong Rak Park; Yong-Hoon Kim; Seong-Woon Choi; Jung-Min Sohn
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Understanding the forbidden pitch phenomenon and assist feature placement
Author(s): Xuelong Shi; Stephen Hsu; J. Fung Chen; Chungwei Michael Hsu; Robert John Socha; Mircea V. Dusa
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Effect of various ArF resist shrinkage amplitudes on CD bias
Author(s): Chih-Ming Ke; Tsai-Sheng Gau; Pei-Hung Chen; Anthony Yen; Burn Jeng Lin; Tadashi Otaka; Takashi Iizumi; Katsuhiro Sasada; Kazuo Ueda
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Compensation of resist trim process and polygate plasma microloading effect for lithography process window and CD uniformity improvement
Author(s): Kay Ming Lee; Cheng Wen Fan; H T Chuang; Jiunn-Ren Huang; Chih Chiang Liu; Kuej Chun Hung
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Contrast enhancement materials for yield improvement in submicron i-line lithography
Author(s): Shane Geary; James Thompson; Elliott Sean Capsuto
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Nanotopography metrology for leading edge 300-mm process integration
Author(s): John Francis Valley; Todd Templeton; Chris L. Koliopoulos; Masanori Yoshise
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New clear-out scheme to improve the overlay performance for a CMP process
Author(s): Yao-Wen Guo; Han-Pin Kao; Tsung-Chih Chien; Chiafu Chang; Hsin-Sung Lin; Yen-Fen Chen; Chin-Yu Ku
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Rigorous electromagnetic simulation of stepper alignment
Author(s): Thomas V. Pistor; Robert John Socha
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Linear alignment correction algorithm for deep-submicron lithography
Author(s): David H. Ziger; Pierre Leroux
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Planarization for the integration of CMOS and micromirror arrays
Author(s): Yun Zheng; Mitra B. Dutta; Carl A. Kotecki; Christian A. Zincke
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New approach for mapping and monitoring damascene trench depth using CD-SEM tilt imaging
Author(s): Ram Peltinov; Anthony Pan; Ophir Dror
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Characterization and control of organic airborne contamination in lithographic processing
Author(s): Andrew J. Dallas; Kristine M. Graham; Marc Clarysse; Vic Fonderle
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Normal-incidence spectroscopic ellipsometry and polarized reflectometry for measurement and control of photoresist critical dimension
Author(s): James Matt Holden; Thomas Gubiotti; William A. McGahan; Mircea V. Dusa; Ton Kiers
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GaAs wafer overlay performance affected by annealing heat treatment: II
Author(s): Ying Liu; Iain Black
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Dynamic in-situ temperature profile monitoring of a deep-UV post-exposure-bake process
Author(s): Barney M. Cohen; Wayne G. Renken; Paul Miller
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Optimization of Eth method for DUV process inline monitor
Author(s): Wenzhan Zhou; Hao Chen; Teng Hwee Ng; Hui Kow Lim
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Application of feedforward reticle: offset for overlay APC in a high-part-count fab
Author(s): David A. Crow; Etienne L. Joubert
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Design and development of a measurement and control system for measuring SEM magnification calibration samples
Author(s): Bradley N. Damazo; E. C. Jayewardene; William J. Keery; Andras E. Vladar; Michael T. Postek
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Matching and monitoring a CD-SEM tool cluster
Author(s): Albert Sicignano; Arkady V. Nikitin; Dmitriy Y. Yeremin; Matthew Sandy; E. Tim Goldburt
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Factors influencing CD-SEM metrology
Author(s): Albert Sicignano; Arkady V. Nikitin; Dmitriy Y. Yeremin; Matthew Sandy; E. Tim Goldburt
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Fundamental solutions for real-time optical CD metrology
Author(s): Jon L. Opsal; Hanyou Chu; Youxian Wen; Yia-Chung Chang; Guangwei Li
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Spectroscopic ellipsometry measurements with the Grating Division-of-Amplitude Photopolarimeter
Author(s): Paul C. Nordine; D. Scott Hampton; Shankar Krishnan
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