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Proceedings of SPIE Volume 4600

Advances in Microelectronic Device Technology
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Volume Details

Volume Number: 4600
Date Published: 15 October 2001
Softcover: 30 papers (224) pages
ISBN: 9780819443397

Table of Contents
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How small can MOSFETs get?
Author(s): Lothar Risch
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InP-based three-dimensional photonic integrated circuits
Author(s): Diana Tsou; Sergey Zaytsev; Alexandre Pauchard; Steve Hummel; Yu-Hwa Lo
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Low-cost silicon receiver OEICs
Author(s): Horst Zimmermann; Horst Dietrich
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Submicron BCDMOS process with extended LDMOS safe-operating-area by optimizing body current
Author(s): Suk-Kyun Lee; Yong-Cheol Choi; S. H. Lee; T. H. Kwon; Cheol-Joong Kim; Hyunsoon Kang; Changsub Song
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Terahertz applications of integrated circuits based on intrinsic Josephson junctions in high Tc superconductors
Author(s): Huabing Wang; Peiheng Wu; Tsutomu Yamashita
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1/f noise in semiconductor heterostructure laser diodes
Author(s): Jung Il Lee; Il Ki Han; Won Jun Choi; Jean Brini; Alain Chovet
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Optically controlled E-MESFET for VLSI application
Author(s): Garima Bandhawakar; B. B. Pal
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Sensitivity of the a-C:H gate pH-ISFET
Author(s): Jung Chuan Chou; Hsjian-Ming Tsai
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Preparation of the SnO2 gate pH-ISFET by sol gel technology
Author(s): Jung Chuan Chou; Yii Fang Wang
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Photonic crystal preparation by a wafer bonding approach
Author(s): Noritsugu Yamamoto; Shinpei Ogawa; Masahiro Imada; Susumu Noda
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Ultrathin wafers: processing and defect issues
Author(s): Manfred Reiche
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Silicon direct bonding approach to high voltage power device (insulated gate bipolar transistors)
Author(s): Giho Cha; Youngchul Kim; Hyungwoo Jang; Hyunsoon Kang; Changsub Song
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Measurement of the behaviors of optoelectron in the photosensitive material by the dielectric spectrum technology
Author(s): Xiaowei Li; Xiaoyong Hu; Li Han; Lifang Dong; Wei Yu
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Numerical and theoretical study of gaseous flows in a microtube
Author(s): C. Shu; X. H. Mao; Yong Tien Chew
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Ultrafast emission of nanodiamond powder
Author(s): Fuli Zhao; Ningsheng Xu; Hezhou Wang; Jian Chen
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Quantum transport model for sub-100 nm CMOS devices
Author(s): Zhiping Yu; D. W. Yergeau; Robert W. Dutton; A. Svizhenko; M. P. Anantram
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ESD protection design for advanced CMOS
Author(s): Jin Biao Huang; Gewen Wang
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Layout techniques for VLSI yield enhancement
Author(s): Zhan Chen; Lixin Zhang
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Debug of IC-card chips assisted by FIB and in-situ mechanical microprobing
Author(s): Xiao Dong Jiang; Xiang Hong Yu; Theodore R. Lundquist
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Open loop method for waveform acquisition on electron-beam probe systems
Author(s): Hui Wang; Hiroyasu Koike; Masayoshi Ikeda; Kenichi Kanai
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Thermal time constants of VLSI circuits
Author(s): Andrzej Kos
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Tunable F-P optical filter based on microcavity structure
Author(s): Min Chen; Xu Liu; Haifeng Li
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Preparations of Zr-rich PZT thin film on YBCO electrode and investigation of ferroelectric properties
Author(s): Runling Peng; Ping Wu
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Photoconductive switch using epitaxial lift-off low-temperature-grown GaAs
Author(s): Tian Lan; GuoQiang Ni
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Design and simulation of a novel piezoresistive accelerometer for high accuracy and overload ability
Author(s): Wei Zhang; Xinping Cao; Bei Liu; Dacheng Zhang
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Extraction of tin by way of direct radiation on SnO2 concentrate with high-power laser
Author(s): Enyang Ren; Qingzhi Du; Tinpin Zhang
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Emission performance of carbon nanotubes
Author(s): Ning Shi; Defu Pi
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Readout circuits for two-dimensional microbolometer arrays
Author(s): Wenyun Gu; Defu Pi
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Lateral bipolar transistor on SOI with dual-sidewalls structure
Author(s): Yong Cai; Lichun Zhang
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Transmissive properties of Zr02/Si02 photonic band gap materials
Author(s): Xiaodong He; Xingyuan Liu; Dali Liu; Rongjin Yu
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