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Proceedings of SPIE Volume 4562

21st Annual BACUS Symposium on Photomask Technology
Editor(s): Giang T. Dao; Brian J. Grenon
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Volume Details

Volume Number: 4562
Date Published: 11 March 2002
Softcover: 121 papers (1214) pages
ISBN: 9780819442901

Table of Contents
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Extended capability of laser writer for masks beyond 180-nm nodes
Author(s): Sung-Yong Cho; Jeong-Yun Lee; Chang-Hwan Kim; Seong-Woon Choi; Woo-Sung Han; Jung-Min Sohn
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Implementation and characterization of a DUV raster-scanned mask pattern generation system
Author(s): Michael J. Bohan; Henry Chris Hamaker; Warren Montgomery
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Pattern generation with SLM imaging
Author(s): Torbjoern Sandstrom; Per Askebjer; Jesper Sallander; Raoul Zerne; Andrzej Karawajczyk
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Technologies for electron-beam reticle writing systems for 130-nm node and below
Author(s): Genya Matsuoka; Hidetoshi Satoh; Akira Fujii; Kazui Mizuno; Tetsuji Nakahara; Suyo Asai; Yasuhiro Kadowaki; Hajime Shimada; Hiroshi Touda; Ken Iizumi; Hiroyuki Takahashi; Kazuyoshi Oonuki; Toshikazu Kawahara; Katsuhiro Kawasaki; Koji Nagata
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Development of refined cleaning technique focusing on ecological viewpoint
Author(s): Koji Tange; Yoshikazu Nagamura; Kunihiro Hosono; Yuki Oomasa; Koichi Kido; Atsushi Hayashi; Yasutaka Kikuchi; Ichiro Imagawa; Yuichi Matsuzawa; Hozumi Usui
Utilization of optical emission endpoint in photomask dry etch processing
Author(s): Thomas B. Faure; Cuc Huynh; Michael J. Lercel; Adam Smith; Thomas Wagner
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Loading effect parameters of dry etcher system and their analysis in mask-to-mask loading and within mask loading
Author(s): Hyuk-Joo Kwon; Dong-Soo Min; Pil-Jin Jang; Byung-Soo Chang; Boo-Yeon Choi; Soo-Hong Jeong
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Tool and process optimization for 100-nm maskmaking using a 50-kV variable shaped e-beam system
Author(s): Dirk Beyer; Dirk Loeffelmacher; Gernot Goedl; Peter Hudek; Bernd Schnabel; Thomas Elster
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Evaluation of reticle cleaning performance with different drying methods for high-grade photomasks
Author(s): Woo-Gun Jeong; Si-Woo Lee; Dae-Hong Kim; Young Jin Yoon; Dong-Heok Lee; Boo Yeon Choi; Sang-Soo Choi; Sung-Mo Jung; Soo-Hong Jeong
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Multibeam high-resolution die-to-database reticle inspection
Author(s): William Waters Volk; William H. Broadbent; Hector I. Garcia; Sterling G. Watson; Phillip Lim; Wayne E. Ruch
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Dependence of mask-defect printability and printability criteria on lithography process resolution
Author(s): Alan R. Stivers; Edita Tejnil
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Inspection of production alternating PSM reticles using UV-based 365-nm reticle inspection tool
Author(s): Anja Rosenbusch; Michael M. Har-zvi; Gidon Gottlib
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New approaches to alternating phase-shift mask inspection
Author(s): Larry S. Zurbrick; Jan P. Heumann; Maciej W. Rudzinski; Stanley E. Stokowski; Jan-Peter Urbach; Lantian Wang
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Challenging giga-feature pattern generation
Author(s): Leif Odselius; Lars Ivansen; Anders Thuren; Mikhail Savitsky; Jan-Erik Larsson
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OPC strategies to minimize mask cost and writing time
Author(s): Michael L. Rieger; Jeffrey P. Mayhew; Jiangwei Li; James P. Shiely
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Integrated method of mask data checking and inspection data prep for manufacturable mask inspection: inspection rule violations
Author(s): Joan McCall; Vinod Reddy; Hyung Min Kim; Mark Babasa
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GDSII considered harmful
Author(s): Alfred J. Reich; Robert E. Boone; Warren D. Grobman; Clyde Browning
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Slashing turnaround-time by introducing distributed computing
Author(s): Gerd Ballhorn
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Automation techniques for the handling of photomask data
Author(s): J. Gordon Hughes; Leslie Drennan
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Highly versatile tapeout automation system
Author(s): Richard D. Morse
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Use of nanomachining as a technique to reduce scrap of high-end photomasks
Author(s): Roy White; Martin Verbeek; Ron Bozak; Marty Klos
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New algorithm for optical photomask CD metrology for the 100-nm node
Author(s): Nicholas G. Doe; Richard D. Eandi; Patrick St. Cin
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First performance data obtained on next-generation mask metrology tool
Author(s): Gerhard W.B. Schlueter; Klaus-Dieter Roeth; John M. Whittey
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Tip shape effects in scanning probe metrology
Author(s): Rand Cottle
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CD metrology on OPC features using light optical and electron optical tools
Author(s): Thomas Schaetz; Stefan Doebereiner; Gerd Scheuring; Hans-Juergen Brueck
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2001 update on the SEMI Standards Mask Qualification Terminology Task Force
Author(s): Rik M. Jonckheere
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Improved method for measuring and assessing reticle pinhole defects
Author(s): Darren Taylor; Anthony Vacca; Larry S. Zurbrick; William B. Howard; William H. Broadbent
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Understanding Bossung curve asymmetry and focus shift effect in EUV lithography
Author(s): Pei-yang Yan
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Enhanced optical inspectability of patterned EUVL mask
Author(s): Ted Liang; Alan R. Stivers; Pei-yang Yan; Edita Tejnil; Guojing Zhang
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Influence of e-beam-induced contamination on the printability of resist structures at 157-nm exposure
Author(s): Christof M. Schilz; Klaus Eisner; Stefan Hien; Thomas Schleussner; Ralf Ludwig; Armin Semmler
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Measurement of the magnitude of triboelectrification in the environment of the 157-nm stepper
Author(s): Lawrence Levit; Wei Guan
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PMJ01 panel discussion review: issues on mask technology for 100-nm lithography
Author(s): Hiroyoshi Tanabe; Hisatake Sano
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Financial impact of technology acceleration on semiconductor masks
Author(s): Walter J. Trybula; Kurt R. Kimmel; Brian J. Grenon
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Using high-resolution (0.13 um) UV-based reticle inspection for CD uniformity in incoming quality control
Author(s): Ernesto Villa; Emanuele Baracchi; Anja Rosenbusch; Michael M. Har-zvi; Gidon Gottlib
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Characterization of an integrated multibeam laser mask-pattern generation and dry etch processing total solution
Author(s): Alex H. Buxbaum; Melisa J. Buie; Brigitte C. Stoehr; Warren Montgomery; Scott E. Fuller
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Wafer FAB experience of implementing 50-kV vector e-beam mask writer and dry etch process for 130-nm technology node generation
Author(s): Won D. Kim; Robert D. Bennett; Z. Mark Ma
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New method for reducing across chip poly-CD variation with statistical OPC/gauge capability analysis
Author(s): Hidetoshi Ohnuma; Koji Kikuchi; Hiroichi Kawahira
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Alternating phase shifting mask implementation to 0.1-um logic gates
Author(s): Chung-Hsing Chang; San-De Tzu; Chen-Hao Hsieh; Chang-Min Dai; Burn Jeng Lin; Chia-Hui Lin; Hua-Yu Liu
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Performance data of a new 248-nm CD metrology tool proved on COG reticles and PSMs
Author(s): Gerhard W.B. Schlueter; Walter Steinberg; John M. Whittey
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New generation photomasks: 193-nm defect printability study
Author(s): Linard Karklin; Paul van Adrichem; Frank A.J.M. Driessen; Stan Mazor
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Performance optimization of the double-exposure alternating PSM for (sub-)100-nm ICs
Author(s): Geert Vandenberghe; Frank A.J.M. Driessen; Paul J.M. Vanadrichem; Kurt G. Ronse; Jason Li; Linard Karklin
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Polarized phase shift mask: concept, design, and potential advantages to photolithography process and physical design
Author(s): Ruoping Wang; Warren D. Grobman; Alfred J. Reich; Matthew A. Thompson
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Partitioning of photomask processes for defects
Author(s): Charles H. Howard; Russell Shoemake; Phillip Lim; Curt J. Linder
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Optimization of ArF alternating phase-shifting mask structure for 100-nm node and inspection of phase defects
Author(s): Kazuaki Chiba; Hiroyuki Takahashi; Wataru Nozaki; Shinji Akima; Susumu Nagashige; Yoshiro Yamada
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Improved yield with SMIF implementation on ALTA systems
Author(s): Jacob Doushy; Gregory E. Valentin; Paul Geller
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Defect dispositioning in a reticle qualification process
Author(s): Mark A. Hawkins; Arthur D. Klaum
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Defect printability analysis of attenuated PSM using PASStm
Author(s): Yumiko Maenaka; Norihiko Takatsu; Ichiro Kagami; Daichi Kakuta
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Inspection and repair of EUV
Author(s): Emily Fisch; Louis Kindt; Michael J. Lercel; Michael R. Schmidt
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Characterization of quartz-etched PSM masks for KrF lithography at the 100-nm node
Author(s): Peter D. Rhyins; Michael Fritze; David Y. Chan; Chris Carney; B. A. Blachowicz; Marco Vieira; Chris A. Mack
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Wavelength-dependent mask defect inspection and printing
Author(s): Martin McCallum
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Stage tracking of a mask-scan EB mask writer test stand
Author(s): Shinsuke Nishimura; Soichiro Mitsui; Munehiro Ogasawara; Kiminobu Akeno; Mitsuko Shimizu; Hideo Kusakabe; Hirotsugu Wada; Kiyoshi Hattori; Shusuke Yoshitake; Naoharu Shimomura; Jun Takamatsu; Hitoshi Sunaoshi; Yuuji Fukudome; Toru Tojo; Seiichi Tsuchiya
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Adjustment of optical proximity correction (OPC) software for mask process correction (MPC). Module 1: Optical mask writing tool simulation
Author(s): Alexandra Barberet; Gilles L. Fanget; Peter D. Buck; Olivier Toublan; Jean-Charles Richoilley; Michel Tissier
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New photomask patterning method based on KrF stepper
Author(s): Tae-Jung Ha; Yong-Kyoo Choi; Oscar Han
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Comparison of contact hole definition using laser and shaped e-beam mask writers and its influence on wafer level pattern fidelity
Author(s): Brian Martin; Robert Lloyd; Gareth Davies; Graham G. Arthur
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Impact of graybeam method of virtual address reduction on image quality
Author(s): Chris A. Mack
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Throughput optimization of electron-beam lithography in photomask fabrication regarding acceptable accuracy of critical dimensions
Author(s): Sergey V. Babin; Igor Yu. Kuzmin
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Extending the performance of KRS-XE for high-throughput electron-beam lithography for advanced mask making
Author(s): David R. Medeiros; Karen E. Petrillo; James Bucchignano; Marie Angelopoulos; Wu-Song Huang; Wenjie Li; Wayne M. Moreau; Robert Lang; Ranee W. Kwong; Christopher Magg; Brian Ashe
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Dry etching characteristics of attenuated phase-shifting masks using Cl2/CF4/O2/He plasmas
Author(s): Se-Jong Choi; Han-Sun Cha; Si-Yeul Yoon; Sung-Mo Jung; Sang-Soo Choi; Soo-Hong Jeong
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Defects analysis of mask blanks
Author(s): Dong-Heok Lee; Dae-Woo Kim; Jung-Kwan Lee; Woo-Gun Jeong; Sang-Soo Choi; Sung-Mo Jung; Soo-Hong Jeong
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Photomask blank shelf-life study on e-beam chemically amplified resists
Author(s): Feng Qian; David Y. Chan; Masahiko Ishizuka; Akira Kurabayashi; Takumi Ogawa; Ryoichi Kobayashi; Takaei Sasaki
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Establishing a cleaning process for attenuated phase-shift masks
Author(s): Thomas White; Larry J. Watson; Chris Currington; Mary Ann Reyna
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Low surface energy polymeric release coating for improved contact print lithography
Author(s): David P. Mancini; Douglas J. Resnick; Kathleen A. Gehoski; Laura L. Popovich; Daniel Chang
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Cleaning of photomask substrates using CO2 snow
Author(s): Werner V. Brandt
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Analysis of dry etch loading effect in mask fabrication
Author(s): Jeong-Yun Lee; Sung-Yong Cho; Chang-Hwan Kim; Sung-Woo Lee; Seong-Woon Choi; Woo-Sung Han; Jung-Min Sohn
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Endpoint solution for photomask chrome loads down to 0.25%
Author(s): Melisa J. Buie; Brigitte C. Stoehr; Alex H. Buxbaum; Guenther G. Ruhl
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Extended chamber matching and repeatability study for chrome etch
Author(s): Yi-Chiau Huang; Melisa J. Buie; Brigitte C. Stoehr; Alex H. Buxbaum; Guenther G. Ruhl
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Chrome etch for <0.13 um advanced reticle production
Author(s): Melisa J. Buie; Brigitte C. Stoehr; Yi-Chiau Huang
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Numerical and experimental studies of pellicle-induced photomask distortions
Author(s): Eric P. Cotte; Roxann L. Engelstad; Edward G. Lovell; Yuri M. Shkel; Florence O. Eschbach; Emily Y. Shu; Daniel Tanzil; Rebecca Calhoun
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Process optimization for particle removal on blank chrome mask plates in preparation for resist application
Author(s): Stephen Osborne; Eryn Smith; Eric Woster; Anthony Pelayo
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Use of KRS-XE positive chemically amplified resist for optical mask manufacturing
Author(s): Brian Ashe; Christina Deverich; Paul A. Rabidoux; Barbara Peck; Karen E. Petrillo; Marie Angelopoulos; Wu-Song Huang; Wayne M. Moreau; David R. Medeiros
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Zep process optimization for sub-micron reticle fabrication in high-acceleration voltage writing tool
Author(s): Junsik S. Cho; Lee-Ju Kim; Cheol Shin
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CARs blanks feasibility study results for the advanced EB reticle fabrication (IV)
Author(s): Masahiro Hashimoto; Fumiko Ota; Yasunori Yokoya; Hideo Kobayashi
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Application of automatic parallel fracturing system on hierarchical and large data structure
Author(s): Eiji Tsujimoto; Takahiro Watanabe; Keitaro Katabuchi; Akihiro Nogami; Shuji Shibayama; Hirokazu Sambayashi; Shozo Takaku; Norihiko Takase
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AutoMOPS- B2B and B2C in mask making: Mask manufacturing performance and customer satisfaction improvement through better information flow management using generic models and standardized languages
Author(s): Olaf Filies; Luc de Ridder; Ben Rodriguez; Aart Kujiken
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Leap ahead in mask data processing for technology nodes below 130 nm
Author(s): Corinne Miramond; Dominique Goubier; Michael Chomat; Yorick Trouiller; Yves Fabien Rody; Olivier Toublan
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Model-based OPC methodology for 0.13 micron technology
Author(s): Vishnu G. Kamat; Kent G. Green; Sejal N. Chheda; Sven Muehle; Venkat Kolagunta; Bill Wilkinson; Cecilia E. Philbin
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Hierarchical GDSII-based fracturing and job deck system
Author(s): Nicolas B. Cobb; Emile Y. Sahouria
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Prevention instead of cure: pre-OPC treatment of photomask layouts
Author(s): Jerry Huang; Karl F. Y. Chiu; Snow Lee; Shih-Ying Chen; Eric C. Lynn
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Quantitative evaluation of focused ion-beam repair for quartz bump defect of alternating phase-shift masks
Author(s): Daichi Kakuta; Ichiro Kagami; Tooru Komizo; Hidetoshi Ohnuma
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Inspection of EAPSMs for 193-nm technology generation using a UV-based 365-nm reticle inspection tool
Author(s): Michael M. Har-zvi; Roman Liebe; Anja Rosenbusch; Gidon Gottlib
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Half-tone PSM inspection sensitivity of 257-nm light source MC-3000
Author(s): Hideo Tsuchiya; Kyoji Yamashita; Shinji Sugihara; Takeshi Fujiwara; Ryoji Yoshikawa
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Optical performances under the conditions of various geometrical structures and phase defects in phase edge PSM
Author(s): Tae Moon Jeong; In-Gyun Shin; Dong-Hoon Chung; Sung-Hyuck Kim; Hyoungdo Kim; Seong-Woon Choi; Woo-Sung Han; Jung-Min Sohn
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ArF (193-nm) alternating aperture PSM quartz defect repair and printability for 100-nm node
Author(s): Jerry Xiaoming Chen; John Riddick; Matt J. Lamantia; Azeddine Zerrade; Robert K. Henderson; Greg P. Hughes; Cyrus Emil Tabery; Khoi A. Phan; Chris A. Spence; Amy A. Winder; William A. Stanton; Eugene A. Delarosa; John G. Maltabes; Cecilia E. Philbin; Lloyd C. Litt; Anthony Vacca; Scott Pomeroy
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Binary mask defect printability for 130-nm ArF lithography
Author(s): Shu-Chun Lin; Jian-Hong Chen; Tyng-Hao Hsu; C. C. Hung; Chin-Hsiang Lin
Show Abstract
Photoresist shape reconstruction from secondary scanning electron microscopy
Author(s): Parvez Ahammad; Amar Mukherjee
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Noncontact electrical critical dimensions metrology sensor for chrome photomasks
Author(s): Nadine Guillaume; Markku Lahti; Michael W. Cresswell; Richard A. Allen; Loren W. Linholm; Mona E. Zaghloul
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Imaging quality analysis using direct Monte Carlo simulation and CAR reaction model in mask fabrication
Author(s): Takeshi Ohfuji; Naoko Kuwahara; Masa-aki Kurihara; Naoki Kitano; Shigekazu Fujimoto; Naoya Hayashi; David H. Hwang
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Comparison of 2D measurement methodologies and their viability in a manufacturing environment
Author(s): Bryan S. Kasprowicz; Darren Taylor; Michael E Hathorn
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Practical complementary mask-data generation for EPL stencil masks using general geometrical operation tools
Author(s): Akemi Moniwa; Fumio Murai
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Multilayer coating requirements for extreme ultraviolet lithography masks
Author(s): Scott Daniel Hector; Eric M. Gullikson; Paul B. Mirkarimi; Eberhard Adolf Spiller; Patrick A. Kearney; James A. Folta
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Characterization and etching of sputter-deposited absorber films for extreme ultraviolet lithography (EUVL) masks
Author(s): Kenneth C. Racette; Carey T. Williams; Michael J. Lercel
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EPL reticle technology
Author(s): Norihiro Katakura; Shin-ichi Takahashi; Masashi Okada; Sumito Shimizu; Shintaro Kawata
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Simulation study of reticle enhancement technology applications for 157-nm lithography
Author(s): Dan L. Schurz; Warren W. Flack; Linard Karklin
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Mask-related distortions of modified fused silica reticles for 157-nm lithography
Author(s): Andrew R. Mikkelson; Amr Y. Abdo; Eric P. Cotte; Jaewoong Sohn; Roxann L. Engelstad; Edward G. Lovell
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Thin film stress control of absorber stack materials for EUVL reticles
Author(s): James R. Wasson; Diana Convey; Pawitter J. S. Mangat; D. Frank Bazzarre; Lubomir Parobek
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Impact on wafer process of sub-120-nm design rule mask
Author(s): Young-Mog Ham; Sang-Sool Koo; Sang Jin Kim; Won-Kwang Ma; Ki-Soo Shin
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Verification of the effect of mask bias on the mask error enhancement factor of contact holes
Author(s): Michael T. Reilly; Stewart A. Robertson; Colin R. Parker; Doris Kang; Mircea V. Dusa; Susan S. MacDonald; Craig A. West
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Challenge for sub-100-nm DRAM gate printing using ArF lithography with combination of moderate OAI and attPSM
Author(s): Young-Chang Kim; Geert Vandenberghe; Staf Verhaegen; Kurt G. Ronse
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Understanding the forbidden pitch and assist feature placement
Author(s): Xuelong Shi; Stephen Hsu; J. Fung Chen; Chungwei Michael Hsu; Robert John Socha; Mircea V. Dusa
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MEEF as a matrix
Author(s): Yuri Granik; Nicolas B. Cobb
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Illumination spectral width impacts on mask error enhancement factor and iso-dense bias in 0.6-NA KrF imaging
Author(s): Ivan Lalovic; Armen Kroyan; Paolo Zambon; Christopher D. Silsby; Nigel R. Farrar
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Characterization of assist features on impact of mask error enhancement factors for sub-0.13-um technology
Author(s): Sia-Kim Tan; Qunying Lin; Cho Jui Tay; Chenggen Quan
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Optimization of alternating phase shifting mask structure
Author(s): Han-Sun Cha; Se-Jong Choi; Si-Yeul Yoon; Sung-Mo Jung; Sang-Soo Choi; Soo-Hong Jeong
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Evaluation of various alternating phase shifting mask processes for KrF lithography
Author(s): Si-Yeul Yoon; Han-Sun Cha; Se-Jong Choi; Sung-Mo Jung; Sang-Soo Choi; Soo-Hong Jeong
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Peformances of triple-tone contact hole mask for optical lithography extensions
Author(s): Sang-Man Bae; Moon-Hee Lee; Sang-Chul Kim; Oscar Han
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Rigorous 3D simulation of phase defects in alternating phase-shifting masks
Author(s): Thomas V. Pistor
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Methodology for accurate and rapid simulation of large arbitrary 2D layouts of advanced photomasks
Author(s): Konstantinos Adam; Andrew R. Neureuther
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150-nm dense/isolated contact hole study with Canon IDEAL technique
Author(s): Takeaki Ebihara; Peter D. Rhyins; Toshihiro Oga; Patrick M. Martin; Monika Sweis
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Aberrations are a big part of OPC for phase shifting masks
Author(s): Frank E. Gennari; Andrew R. Neureuther
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Improvement of alt-PSM production process using backside phase-measurement method
Author(s): Hidetaka Saitou; Yasuhiro Koizumi; Syuichi Sanki; Tatsuhiko Kamibayashi; Shiaki M. Murai; Hiroyuki Miyashita; Hiroshi Fujita; Yasutaka Morikawa; Masami Nara; Naoya Hayashi; Morihisa Hoga
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One step forward to maturity of AF (assistant feature)-OPC in 100-nm level DRAM application
Author(s): Hyunjae Kang; Byeongsoo Kim; Joonsoo Park; Insung Kim; Gisung Yeo; Junghyun Lee; Hanku Cho; Joo-Tae Moon
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Robust and fast OPC approach for metal interconnects of 0.13um logic devices
Author(s): Ji-Soong Park; Dong-Hyun Kim; Chul-Hong Park; Yoo-Hyon Kim; Moon-Hyun Yoo; Jeong-Taek Kong; Hyun-Woo Kim; Sun-Il Yoo
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Contribution of polychromatic illumination to optical proximity effects in the context of deep-UV lithography
Author(s): Armen Kroyan; Ivan Lalovic; Nigel R. Farrar
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Alternating PSM defect printability at 193-nm wavelength
Author(s): Chih-Cheng Lin; Young-Sik Kim; Kurt R. Kimmel
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Feasibility study of manufacturing process and quality control for the new alternating PSM structure
Author(s): Yasutaka Morikawa; Haruo Kokubo; Masaharu Nishiguchi; Masami Nara; Yousuke Totsu; Morihisa Hoga; Naoya Hayashi
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Productivity and OPC reticle inspectability using multibeam UV wavelength inspection
Author(s): Dino Hsieh; Vincent Wen; Mark R. Laurance
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High transmittance attenuated phase shifting mask of chromium aluminum oxynitride
Author(s): Eunchul Choi; Eunah Kim; Hyoungdo Kim; Yong-Hoon Kim; Huyong Tian; Kwangsoo No
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Investigation of MoSi etch processes for embedded attenuating phase shift mask applications utilizing a next-generation ICP source
Author(s): Jason Plumhoff; Chris Constantine; C. Strawn; J. Shin
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Optimization and scale-down of wafer-based resist strip and rinse processes for photomask production
Author(s): Brant L. Aggus; Gene Weaver
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Repair and imaging of 193-nm MoSiON phase-shift photomasks
Author(s): Chris Marotta; Joshua Lessing; Jeff Marshman; Marcus Ramstein
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