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PROCEEDINGS VOLUME 4409

Photomask and Next-Generation Lithography Mask Technology VIII
Editor(s): Hiroichi Kawahira
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Volume Details

Volume Number: 4409
Date Published: 5 September 2001
Softcover: 82 papers (754) pages
ISBN: 9780819441119

Table of Contents
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Impact of embedded DRAM logic devices on semiconductor manufacturing
Author(s): Teruo Hirayama; T. Ezaki; N. Ouchi
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High-performance e-beam resist coupling excellent dry etch resistance and sub-100-nm resolution for advanced mask making
Author(s): Wu-Song Huang; Ranee W. Kwong; Wayne M. Moreau; Robert Lang; Christopher F. Robinson; David R. Medeiros; Karen E. Petrillo; Ari Aviram; Arpan P. Mahorowala; Marie Angelopoulos; Christopher Magg; Mark Lawliss; Thomas B. Faure
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Resolution improvement of chemical-amplification resist using process-induced effect correction
Author(s): Ji-Hyeon Choi; Chang-Hwan Kim; Jeong-Yun Lee; Seong-Yong Moon; Seong-Woon Choi; Woo-Sung Han; Jung-Min Sohn
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Photoresist processing for high-resolution DUV lithography at 257 nm
Author(s): Scott E. Fuller; Warren Montgomery; Jeff A. Albelo; William Rodrigues; Alex H. Buxbaum
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CARs blanks feasibility study results for advanced EB reticle fabrication: III
Author(s): Masahiro Hashimoto; Fumiko Ohta; Yasunori Yokoya; Hideo Kobayashi
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Enhanced dispositioning of reticle defects using the Virtual Stepper with automated defect severity scoring
Author(s): Lynn Cai; Khoi A. Phan; Chris A. Spence; Linyong Pang; Kevin K. Chan
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Defect printability study with programmed defects on halftone reticles
Author(s): Wolfgang Dettmann; Henning Haffner; Jan P. Heumann; Roman Liebe; R. Ludwig; R. Moses
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Defect dispositioning using mask printability on attenuated phase-shift production photomasks
Author(s): Justin W. Novak; Benjamin George Eynon; Anja Rosenbusch; Alex Goldenshtein
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Mask defect disposition: flux-area measurement of edge, contact, and OPC defects correlates to wafer and enables effective decisions
Author(s): Peter Fiekowsky; Darren Taylor; David Wang; Chien-Chu Yang; Shu-Chun Lin; L. H. Tu; K. R. Lin
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Contact holes: optical area measurement predicts printability and is highly repeatable
Author(s): Glen W. Scheid; Darren Taylor; Peter Fiekowsky
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First performance data obtained on next-generation optical mask metrology tools
Author(s): Klaus-Dieter Roeth; Carola Blaesing-Bangert; Herger Alt; Gerhard W.B. Schlueter
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Resolution enhancement techniques in optical lithography: It's not just a mask problem
Author(s): Lars W. Liebmann
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Fabricating 100-nm line patterns with high-transmittance ArF attenuated phase-shift masks
Author(s): Haruo Iwasaki; Shinji Ishida; K. Tonai; Hiroshi Nozue
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Application of multistep quartz etching method to strong PSMs
Author(s): Hyoungdo Kim; Yong-Hoon Kim; Seong-Woon Choi; Woo-Sung Han; Jung-Min Sohn
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Optimization of alternating phase-shift mask structure for ArF laser lithography
Author(s): Tomohiko Yamamoto; Naoyuki Ishiwata; Yuichiro Yanagishita; Takema Kobayashi; Satoru Asai
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ZrSiON as a material for high-transmittance attenuated PSM
Author(s): Koichiro Kanayama; Takashi Haraguchi; Tsukasa Yamazaki; Toshihiro Ii; Tadashi Matsuo; Nobuhiko Fukuhara; Tadashi Saga; Yusuke Hattori; Takashi Ooshima; Masao Otaki
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Development of bilayered TaSiOx-HTPSM: I
Author(s): Toshiaki Motonaga; M. Ohtsuki; Y. Kinase; H. Nakagawa; Toshifumi Yokoyama; Hiroshi Mohri; Junji Fujikawa; Naoya Hayashi
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Development of bilayered TaSiOx-HTPSM: II
Author(s): Toshifumi Yokoyama; S. Yusa; T. Okamura; H. Nakagawa; Toshiaki Motonaga; Hiroshi Mohri; Junji Fujikawa; Naoya Hayashi
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New mask data verification method after optical proximity effect correction
Author(s): Kazuhisa Ogawa; Isao Ashida; Hiroichi Kawahira
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Optimization of fabrication process for dual-trench-type alternating PSM
Author(s): Tooru Komizo; Ichiro Kagami; Daichi Kakuta; Hiroichi Kawahira
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100-nm alternating PSM structure discussion for ArF lithography
Author(s): Yasutaka Morikawa; Haruo Kokubo; Masami Nara; Hiroyuki Miyashita; Naoya Hayashi
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Prediction of MEEF using a simple model and MEEF enhancement parameters
Author(s): Dong-Hoon Chung; Seung-Hune Yang; Hyung-Do Kim; In-Gyun Shin; Yong-Hoon Kim; Seong-Woon Choi; Woo-Sung Han; Jung-Min Sohn
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Reticle quality needs for advanced 193-nm lithography
Author(s): Rik M. Jonckheere; Geert Vandenberghe; Vincent Wiaux; Staf Verhaegen; Kurt G. Ronse
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Enhanced capability improvement using OPC pattern generation at laser lithography
Author(s): In-Soo Lee; Kyung-Han Nam; Lee-Ju Kim; Cheol Shin; Hong-Seok Kim
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Fabry-Perot-type antireflective coating for deep-ultraviolet binary photomask application
Author(s): Hsuen-Li Chen; Chien-Kui Hsu; Ben-Chang Chen; Fu-Hsiang Ko; Tiao-Yuan Huang; Tien-Chi Chu
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Application of chemically amplified resist to 10-keV e-beam system
Author(s): Sung-Hee Ahn; Chang-Hwan Kim; Seung-Hune Yang; Seong-Yong Moon; Seong-Woon Choi; Woo-Sung Han; Jung-Min Sohn
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Advantages of using the CAR for photomask manufacturing
Author(s): Takehiro Kondoh; Masamitsu Itoh; Rikiya Taniguchi; Kyoh Ohtsubo; Mari Sakai; Hidehiro Watanabe
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Acid-breakable-resin-based chemical amplification positive resist for 0.1-um-rule reticle fabrication: design and lithographic performance
Author(s): Sonoko Migitaka; Tadashi Arai; Toshio Sakamizu; Kei Kasuya; Michiaki Hashimoto; Hiroshi Shiraishi
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Elongation effect of a protecting layer for film life of chemically amplified-type e-beam resist
Author(s): Kakuei Ozawa; Nobunori Abe
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Improved baking of photomasks by a dynamically zone-controlled process approach
Author(s): Peter Dress; Thomas M. Gairing; Werner Saule; Uwe U. Dietze; Jakob Szekeresch
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Electron-beam lithography simulation for mask making: VI. Comparison of 10- and 50-kV GHOST proximity effect correction
Author(s): Chris A. Mack
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Dry etching of Cr layer and its loading effect
Author(s): Hyuk-Joo Kwon; D. S. Min; Pil-Jin Jang; Byung-Soo Chang; Boo-Yeon Choi; Kyung Ho Park; Soo-Hong Jeong
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Improvement of NLD mask dry etching system
Author(s): Tatsuya Fujisawa; Nobuyuki Yoshioka; Takaei Sasaki; Kazuhide Yamashiro
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Effect of clear field ratio on critical dimension in the dry etching process
Author(s): Chul-Joong Lee; Hyun-Suk Bang; J. W. Choi; H. S. Jung; Cheol Shin; Hong-Seok Kim
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Development and characterization of a new plasma etching process for mask manufacturing
Author(s): Frank Erber; Guenther G. Ruhl; C. Ebi; Ralf Dietrich; Josef Mathuni; Pavel Nesladek
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Pattern shape analysis tool for quantitative estimate of photomask and process
Author(s): Isao Yonekura; Yuhichi Fukushima; Fuyuhiko Matsuo; Masao Otaki; Norihito Fukugami
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Accuracy of transmittance measurement of inspection machine for semitransparent defect and its detectability
Author(s): Jung-Bae Kim; I. B. Hur; Seong-Ho Jeong; Yong-Seok Son; Kyu-Yong Lee; Sang Woon Lee; Cheol Shin; Hong-Seok Kim
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Photomask quality control by Virtual Stepper system for subwavelength photomasks
Author(s): Linard Karklin; Stan Mazor
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Simulation-based defect printability analysis for 0.13-um technology
Author(s): Cihan Tinaztepe; Ichiro Kagami
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Precise x-ray mask writing technology using advanced 100-kV EB writer EB-X3
Author(s): Yoshinori Nakayama; Hiroshi Watanabe; Shinji Tsuboi; Hajime Aoyama; Mizunori Ezaki; Yasuji Matsui; Tetsuo Morosawa; Masatoshi Oda
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Fabrication of NIST-format x-ray masks with 4-Gb DRAM patterns
Author(s): Yuusuke Tanaka; Kiyoshi Fujii; Kenichiro Suzuki; Toshiyuki Iwamoto; Shinji Tsuboi; Yasuji Matsui
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Evaluation of aperture mask degradation in electron-beam lithography using line edge roughness of resist patterns
Author(s): Masaki Yoshizawa; Shigeru Moriya
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Performance of Cr mask for extreme-ultraviolet lithography
Author(s): Hajime Nii; Hiroo Kinoshita; Takeo Watanabe; K. Hamamoto; H. Tsubakino; Y. Sugie
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EUV mask cleaning by dry and wet processes
Author(s): Hajime Nii; Hiroo Kinoshita; Takeo Watanabe; Y. Matsuo; Y. Sugie
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Thermal response of EUVL mask substrate during dry etching process
Author(s): Akira Chiba; Eiichi Hoshino; Makoto Takahashi; Hiromasa Yamanashi; Hiromasa Hoko; Byoung Taek Lee; Takashi Yoneda; Masaaki Ito; Taro Ogawa; Shinji Okazaki
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Simulation of EUVL mask defect printability
Author(s): Manhyoung Ryoo; Masaaki Ito; Byoung Taek Lee; Taro Ogawa; Shinji Okazaki
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LM5000 as a strong mask analyzing tool
Author(s): Hisashi Shiba; Masayoshi Kimura; Y. Saito; Naohisa Takayama; K. Matsumura; Shingo Murakami; Keiichi Hatta
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Advanced FIB mask repair technology for ArF lithography: III
Author(s): Ryoji Hagiwara; Anto Yasaka; Osamu Takaoka; Tomokazu Kozakai; S. Yabe; Yoshihiro Koyama; Masashi Muramatsu; Toshio Doi; Kenji Suzuki; Mamoru Okabe; Kazuo Aita; Tatsuya Adachi; Shinji Kubo; Nobuyuki Yoshioka; Hiroaki Morimoto; Yasutaka Morikawa; Kazuya Iwase; Naoya Hayashi
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Mask process design optimization based on quality mapping using standard mask inspection equipment
Author(s): Shen Chung Kuo; TaiSheng Tan; Anja Rosenbusch; Yair Eran; Ofer Lindman; Gidon Gottlib
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Development of refined cleaning technique focusing on an ecological viewpoint
Author(s): Koji Tange; Yoshikazu Nagamura; Kunihiro Hosono; Yuki Oomasa; Koichi Kido; Atsushi Hayashi; Yasutaka Kikuchi; Ichiro Imagawa; Yuichi Matsuzawa; Hozumi Usui
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Improvement of photomask repeater for 130-nm lithography
Author(s): Suigen Kyoh; Soichi Inoue; Ichiro Mori; Nobuyuki Irie; Yuuki Ishii; Toshikazu Umatate; Haruo Kokubo; Naoya Hayashi
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Laser proximity correction for advanced mask manufacturing
Author(s): Michael Chang; A. Yu; J. Chen; J. Lin; Jason H. Huang; F. Hsu; Hua-Yu Liu
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CD measurement for next-generation mask
Author(s): Takeshi Yamane; Takashi Hirano
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New optical metrology for masks: range and accuracy rivals SEM
Author(s): Rand Cottle; Peter Fiekowsky; C. C. Hung; Sheng-che Lin
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Up-to-date activities of PXL (proximity x-ray lithography)
Author(s): Yasuji Matsui; Takao Taguchi; Yoshinori Nakayama; Yukiko Kikuchi; Shinji Tsuboi; Hiroaki Sumitani
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EUVL masks: paving the path for commercialization
Author(s): Pawitter J. S. Mangat; Scott Daniel Hector
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Stencil masks for electron-beam projection lithography
Author(s): Kenji Kurihara; H. Iriguchi; A. Motoyoshi; T. Tabata; S. Takahashi; K. Iwamoto; Ikuo Okada; Hideo Yoshihara; Hitoshi Noguchi
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Optical inspection of EUV and SCALPEL reticles
Author(s): Donald W. Pettibone; Stanley E. Stokowski
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Mask blanks warpage at 130-nm node
Author(s): Nobuyoshi Deguchi; Kazunori Iwamoto; Izumi Tsukamoto; Ryo Takai; Mitsuru Hiura
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CF4/O2 plasma simulation and comparison with quartz etch experiment
Author(s): Han-Ming Wu; Long He; Jeff N. Farnsworth; Gang Liu
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Multibeam high-resolution UV wavelength reticle inspection
Author(s): Chih-Chien Hung; Chue-San Yoo; Chin-Hsiang Lin; William Waters Volk; James N. Wiley; Steve Khanna; Steve Biellak; D. Wang
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Phase defect inspection by differential interference
Author(s): Kiyoshi Ogawa; J. Kodama; K. Machida; Katsuyoshi Nakashima; Yaichiro Watakabe
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Laser mask repair system LM700A
Author(s): Atsushi Ueda; Yoichi Yoshino; Yukio Morishige; Syuichi Watanabe; Yukio Kyusho; Tsutoma Haneda; Makoto Ohmiya
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Focused ion beam repair for quartz bump defect of alternating phase-shift masks
Author(s): Ichiro Kagami; Daichi Kakuta; Tooru Komizo; Hiroichi Kawahira
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Utilization of assisting features in contact-hole mask repair
Author(s): Chia-Yang Chang; Chung-Hsing Chang; Chuan-Yuan Lin; C. C. Hung; Chien-Hung Lin; John C.H. Lin
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Reticle cleaning process for 130-nm lithography and beyond
Author(s): Hitoshi Handa; Masumi Takahashi; Hisatsugu Shirai
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Longevity of 193-nm/ArF excimer pellicle
Author(s): Takashi Kozeki; Shigeto Shigematsu; Masahiro Kondo; Hiroaki Nakagawa
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Simulation of image quality issues at low k1 for 100-nm lithography
Author(s): Andrew R. Neureuther; Konstantinos Adam; Shoji Hotta; Thomas V. Pistor; Garth Robins; Yunfei Deng
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Impact of ArF attenuated PSM using multishifter layer (TiN/Si3N4) for next-generation lithography
Author(s): Kyung-Han Nam; Lee-Ju Kim; Hyoung-Sup Jeong; Sang Woon Lee; In-Soo Lee; Cheol Shin; Hong-Seok Kim; L. Dieu; Seung-Weon Paek; Sang-Sool Koo; Sang-Man Bae; Young-Mog Ham; Ki-Soo Shin
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New optimization method of exposure with alternative phase-shifting masks
Author(s): Koji Kikuchi; Hidetoshi Ohnuma; Hiroichi Kawahira
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Manufacturing and inspection of assist-bar-type OPC mask
Author(s): Masayoshi Tsuzuki; Wataru Nozaki; Shinji Akima; Jun Yoshida; Yuko Oi; Yoshiro Yamada; Yuichi Matsuzawa
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157-nm photomask handling and infrastructure: requirements and feasibility
Author(s): Jerry Cullins; Edward G. Muzio
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High-productivity mask writer with broad operating range
Author(s): Ki-Ho Baik; Varoujan Chakarian; Bob Dean; Maiying Lu; Robert J. Naber; Thomas H. Newman; Mark Wiltse; Frank E. Abboud
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Sigma7100: a new architecture for laser pattern generators for 130 nm and beyond
Author(s): Torbjoern Sandstrom; Timothy I. Fillion; Ulric B. Ljungblad; Mats Rosling
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Writing accuracy of EBM-3500 electron-beam mask writing system
Author(s): Kenji Ohtoshi; Hitoshi Sunaoshi; Jun Takamatsu; Fumiyuki Okabe; K. Ishibashi; Shusuke Yoshitake; Hirokazu Yamada; Shuichi Tamamushi; Hirohito Anze; T. Kamikobo; Yoji Ogawa
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Performance of improved e-beam lithography system JBX-9000MVII
Author(s): Tadashi Komagata; Yasutoshi Nakagawa; Nobuo Gotoh; Kazumitsu Tanaka
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Advanced e-beam reticle writing system for next-generation reticle fabrication
Author(s): Akira Fujii; Kazui Mizuno; Tetsuji Nakahara; Suyo Asai; Yasuhiro Kadowaki; Hajime Shimada; Hiroshi Touda; Ken Iizumi; Hiroyuki Takahashi; Kazuyoshi Oonuki; Toshikazu Kawahara; Katsuhiro Kawasaki; Koji Nagata; H. Satoh
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(Sub-) 100-nm gate patterning using 248-nm alternating PSM
Author(s): Geert Vandenberghe; Patrick Jaenen; Rik M. Jonckheere; Kurt G. Ronse; Olivier Toublan
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New mask technology challenges
Author(s): Kurt R. Kimmel
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Atomic force metrology and 3D modeling of microtrenching in etched photomask features
Author(s): Bradley Todd; Kirk Miller; Thomas V. Pistor
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RuMBa: a rule-model OPC for low MEEF 130-nm KrF lithography
Author(s): Stephen Hsu; Xuelong Shi; Chungwei Michael Hsu; Noel P. Corcoran; J. Fung Chen; Sunil Desai; Micheal J. Sherrill; Y. C. Tseng; H. A. Chang; J. F. Kao; Alex Tseng; WeiJyh Liu; Anseime Chen; Arthur Lin; Jan Pieter Kujten; Eric Jacobs; Arjan Verhappen
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