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Proceedings of SPIE Volume 4346

Optical Microlithography XIV
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Volume Details

Volume Number: 4346
Date Published: 14 September 2001
Softcover: 169 papers (1710) pages
ISBN: 9780819440327

Table of Contents
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Optimal lens assignment through measured aberrations
Author(s): Nakgeuon Seong; Young S. Kang; Hanku Cho; Joo-Tae Moon
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Aberration measurement using in-situ two-beam interferometry
Author(s): Joseph P. Kirk; Gerhard Kunkel; Alfred K. K. Wong
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New phase-shift gratings for measuring aberrations
Author(s): Hiroshi Nomura
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Ring test aberration determination and device lithography correlation
Author(s): Cesar M. Garza; Will Conley; Bernard J. Roman; Mike Schippers; James Foster; Jan Baselmans; Kevin D. Cummings; Donis G. Flagello
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Marathon evaluation of optical materials for 157-nm lithography
Author(s): Vladimir Liberman; Mordechai Rothschild; N. N. Efremow; Stephen T. Palmacci; Jan H. C. Sedlacek; Chris K. Van Peski; Kevin J. Orvek
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157-nm photomask handling and infrastructure: requirements and feasibility
Author(s): Jerry Cullins; Edward G. Muzio
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Exposure latitude requirements for high yield with photon flux-limited laser sources
Author(s): Sean C. O'Brien; Mark E. Mason
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SVG 157-nm lithography technical review
Author(s): Thomas J. Fahey; James A. McClay; Matthew E. Hansen; Bruce A. Tirri; Matthew Lipson
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Current status of Nikon's F2 exposure tool development
Author(s): Naomasa Shiraishi; Soichi Owa; Yasuhiro Ohmura; Takashi Aoki; Yukako Matsumoto; Masato Hatasawa; Takashi Mori; Issei Tanaka
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Correction for etch proximity: new models and applications
Author(s): Yuri Granik
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Process dependencies of optical proximity corrections
Author(s): Franz X. Zach; Donald J. Samuels; Alan C. Thomas; Shahid A. Butt
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Model-based OPC for first-generation 193-nm lithography
Author(s): Kevin D. Lucas; James C. Word; Geert Vandenberghe; Staf Verhaegen; Rik M. Jonckheere
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Mask considerations for manufacturing assist features
Author(s): Ji-Hyeon Choi; Won-Il Cho; Byeongsoo Kim; Seung-Hune Yang; Seong-Yong Moon; Seong-Woon Choi; Woo-Sung Han; Jung-Min Sohn
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Optimizing style options for subresolution assist features
Author(s): Lars W. Liebmann; James A. Bruce; William Chu; Michael Cross; Ioana C. Graur; Joshua J. Krueger; William C. Leipold; Scott M. Mansfield; Anne E. McGuire; Dianne L. Sundling
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Can DUV take us below 100 nm?
Author(s): Jo Finders; Louis Jorritsma; Mark Eurlings; Richard Moerman; Henk van Greevenbroek; Jan B.P. van Schoot; Donis G. Flagello; Robert John Socha; Thomas Stammler
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ArF lithography for printing 100-nm gates on low-volume ASIC devices: CD budget issues related to various binary mask-making processes
Author(s): Yorick Trouiller; Gilles L. Fanget; Corinne Miramond; Yves Fabien Rody
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ArF lithography options for 100-nm technologies
Author(s): Geert Vandenberghe; Young-Chang Kim; Christie Delvaux; Kevin D. Lucas; Sang-Jun Choi; Monique Ercken; Kurt G. Ronse; Bert Vleeming
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100-nm node lithography with KrF?
Author(s): Michael Fritze; Brian Tyrrell; David K. Astolfi; Donna Yost; Paul Davis; Bruce Wheeler; Renee D. Mallen; J. Jarmolowicz; Susan G. Cann; Hua-Yu Liu; M. Ma; David Y. Chan; Peter D. Rhyins; Chris Carney; John E. Ferri; B. A. Blachowicz
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Lithography process design for 4-Gb DRAM of 0.31 K1 with KrF
Author(s): Joonsoo Park; Gisung Yeo; Insung Kim; Byeongsoo Kim; Junghyun Lee; Hanku Cho; Joo-Tae Moon
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Feasibility study of printing sub-100-nm with ArF lithography
Author(s): Seok-Kyun Kim; Jong-Gyun Hong; Joo-On Park; Tea-Jun Yoo; Yoon-Suk Hyun; Cheol-Kyu Bok; Ki-Soo Shin
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DRAM lithographic scaling in the sub-130-nm regime
Author(s): Scott J. Bukofsky
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Printing 130-nm DRAM isolation pattern: Zernike correlation and tool improvement
Author(s): Jan B.P. van Schoot; Nakgeuon Seong; Bernd Geh; Martin Burkhardt; Paul Graeupner; Gerd Reisinger; Rian Rubingh; Manfred Suddendorf; Jo Finders; Erwin Rikkers
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Application of full-chip level optical proximity correction to memory device with sub-0.10-um design rule and ArF lithography
Author(s): Hyoung-Soon Yune; Hee-Bom Kim; Wan-Ho Kim; Chang-Nam Ahn; Young-Mog Ham; Ki-Soo Shin
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The MEEF shall inherit the Earth
Author(s): Will Conley; Cesar M. Garza; Mircea V. Dusa; Robert John Socha; Joseph J. Bendik; Chris A. Mack
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High-NA swing curve effects
Author(s): Timothy A. Brunner; Allen H. Gabor; ChungHsi J. Wu; Nora Chen
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Novel multiple resist patterning stacks for dual-damascene interconnection and resolution-enhanced patterns
Author(s): I-Hsiung Huang; Jiunn-Ren Huang; Yi-Fang Cheng; Kuei-Chun Hung; S. C. Chien
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Trench pattern lithography for 0.13- and 0.10-um logic devices at 248-nm and 193-nm wavelengths
Author(s): Ying-Ying Wang; Hua Tai Lin; Shinn Sheng Yu; Chun-Kuang Chen; Yao Ching Ku; Anthony Yen; Burn Jeng Lin
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CD control of low-k-factor step-and-scan lithography
Author(s): Christopher P. Ausschnitt; Christopher J. Progler; William Chu
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Statistical method for influence of exposure and focus error on CD variation
Author(s): Shoji Mimotogi
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ArF imaging modeling by using resist simulation and pattern matching
Author(s): Mosong Cheng; Andrew R. Neureuther
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Impact of acid/quencher behavior on lithography performance
Author(s): Hiroshi Fukuda; Keiko T. Hattori; Takuya Hagiwara
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Simplified models for edge transitions in rigorous mask modeling
Author(s): Konstantinos Adam; Andrew R. Neureuther
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Topography effects and wave aberrations in advanced PSM technology
Author(s): Andreas Erdmann
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Application of 3D EMF simulation for development and optimization of alternating phase-shifting masks
Author(s): Armin Semmler; Leonhard Mader; Annika Elsner; Roderick Koehle; Uwe A. Griesinger; Christoph Noelscher
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CD control for two-dimensional features in future technology nodes
Author(s): Staf Verhaegen; Ronald L. Gordon; Rik M. Jonckheere; Martin McCallum; Kurt G. Ronse
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Measurement of transmittance variation of projection lenses depending on the light paths using a grating-pinhole mask
Author(s): Kazuya Sato; Soichi Inoue
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Reduction of dose effects due to the transient absorption in fused silica at 193 nm
Author(s): Gregory J. Kivenzor; Richard J. Guerra
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Behavior of lens aberrations as a function of wavelength on KrF and ArF lithography scanners
Author(s): Mark Terry; Ivan Lalovic; Gregory M. Wells; Adlai H. Smith
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Method to predict CD variation caused by dynamic scanning focus errors
Author(s): Tsuneyuki Hagiwara; Hideo Mizutani; Shinichi Okita; Naoto Kondo
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Alternating phase-shifting mask with reduced aberration sensitivity: lithography considerations
Author(s): Alfred K. K. Wong; Lars W. Liebmann; Antoinette F. Molless
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Evaluation of 3D alternating PSM structures using mask topography simulation, and AIMS at lambda=193nm
Author(s): Cyrus Emil Tabery; Chris A. Spence
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Patterning 0.1-um device by using hybrid PSM
Author(s): Chungwei Hsu; Ronfu Chu; Troy Wang; C. C. Liao
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Patterning 80-nm gates using 248-nm lithography: an approach for 0.13-um VLSI manufacturing
Author(s): Chien-Ming Wang; Chien-Wen Lai; Jason H. Huang; Hua-Yu Liu
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Effects of complementary phase-shift imaging on gate CD control
Author(s): Carla Nelson-Thomas; Michael E. Kling; Matthew A. Thompson; Ruoping Wang; Nigel Cave; Chong-Cheng Fu
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Mutually optimizing resolution enhancement techniques: illumination, APSM, assist feature OPC, and gray bars
Author(s): Bruce W. Smith
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Optimum mask and source patterns to print a given shape
Author(s): Alan E. Rosenbluth; Scott J. Bukofsky; Michael S. Hibbs; Kafai Lai; Antoinette F. Molless; Rama Nand Singh; Alfred K. K. Wong
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Innovative imaging of ultrafine line without using any strong RET
Author(s): Shuji Nakao; Kouichirou Narimatsu; Tadasi Miyagi; Sachiko Ogawa; Naohisa Tamada; Akihiro Nakae; Akira Tokui; Kouichirou Tsujita; Ichiriou Arimoto; Wataru Wakamiya
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Binary halftone chromeless PSM technology for quarter-lambda optical lithography
Author(s): J. Fung Chen; John S. Petersen; Robert John Socha; Thomas L. Laidig; Kurt E. Wampler; Kent H. Nakagawa; Greg P. Hughes; Susan S. MacDonald; Waiman Ng
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Performance results of a new generation of 300-mm lithography systems
Author(s): Boudewijn G. Sluijk; Tom Castenmiller; Richard du Croo de Jongh; Hans Jasper; Theo Modderman; Leon Levasier; Erik Loopstra; Guustaaf Savenije; Marc Boonman; Harry Cox
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New projection lens system for KrF exposure scanning tool
Author(s): Tomoyuki Matsuyama; Junichi Misawa; Yuichi Shibazaki
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Optical design forms for DUV and VUV microlithographic processes
Author(s): James E. Webb; Julie Bentley; Paul F. Michaloski; Anthony R. Phillips; Ted Tienvieri
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High-power 193-nm excimer lasers for DUV lithography
Author(s): Rainer Paetzel; Klaus Vogler; Hans Stephen Albrecht; Thomas Schroeder; Igor Bragin; Juergen Kleinschmidt; Wolfgang Zschocke
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Aberration control for advanced step-and-scan systems using pupil plane engineering
Author(s): Harry Sewell; Daniel R. Cote; Andrew Guzman; Carlo Lafiandra; Tim O'Neil
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Aerial image measurement methods for fast aberration set-up and illumination pupil verification
Author(s): Hans van der Laan; Marcel Dierichs; Henk van Greevenbroek; Elaine McCoo; Fred Stoffels; Richard Pongers; Rob Willekers
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High-numerical-aperture 193-nm exposure tool
Author(s): Harry Sewell; Daniel R. Cote; David M. Williamson; Mark L. Oskotsky; Lev Sakin; Tim O'Neil; John D. Zimmerman; Richard Zimmerman; Mike Nelson; Christopher J. Mason; David Ahouse; Hilary G. Harrold; Philip Lamastra; David Callan
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New scanners for the 100-nm era
Author(s): Kazunori Iwamoto; Fumio M. Sakai
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ArF step-and-scan system with 0.75 NA for the 0.10um node
Author(s): Bert Vleeming; Barbra Heskamp; Hans Bakker; Leon Verstappen; Jo Finders; Jan Stoeten; Rainer Boerret; Oliver Roempp
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Higher-NA ArF scanning exposure tool on new platform for further 100-nm technology node
Author(s): Susumu Mori
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Present status of development of gas-purging and chemically clean technologies at ASET
Author(s): Yasuaki Fukuda; Seiji Takeuchi; Takashi Aoki; Soichi Owa; Fumika Yoshida; Youichi Kawasa; Akira Sumitani; Keiji Egawa; Takehito Watanabe; Kiyoharu Nakao
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UV cleaning of contaminated 157-nm reticles
Author(s): Theodore M. Bloomstein; Vladimir Liberman; Mordechai Rothschild; N. N. Efremow; D. E. Hardy; Stephen T. Palmacci
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Protecting 248-nm and 193-nm lithography from airborne molecular contamination during semiconductor fabrication
Author(s): Anatoly Grayfer; Oleg P. Kishkovich; David Ruede
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Controlled contamination of optics under 157-nm laser irradiation
Author(s): Theodore M. Bloomstein; Vladimir Liberman; Stephen T. Palmacci; Mordechai Rothschild
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Patterning of random interconnect using double exposure of strong-type PSMs
Author(s): Hiroshi Fukuda; Takuya Hagiwara
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Multiple-focus exposure in strong phase-shift lithography: improvement of CD-focus characteristics and CD controllability
Author(s): Masashi Fujimoto; Tadao Yasuzato
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Lens aberration control for fine patterning with PSM
Author(s): Takehito Kudo; Shigeru Hirukawa; Toshiharu Nakashima; Koichi Matsumoto
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Alternating PSM mask performance: a study of multiple fabrication technique results
Author(s): Martin McCallum; Patricia Gabella; Gilbert V. Shelden; Kevin Kjoller; Edward Kirk Miller
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Multiple pitch transmission and phase analysis of six types of strong phase-shifting masks
Author(s): David J. Gerold; John S. Petersen; David Levenson
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Application of attenuated phase-shifting masks to sub-130-nm lithography
Author(s): Chee Kiong Koo; Lay Cheng Choo; Qunying Lin; Shyue Seng Tan; Hui Jun Lee; Siu Chung Tam; Alex K. See
Reduction of mask error enhancement factor (MEEF) by the optimum exposure dose self-adjusted mask
Author(s): Seiji Matsuura; Takayuki Uchiyama; Takeo Hashimoto
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Mask error factor: critical dimension variation across different tools, features, and exposure conditions
Author(s): Igor Jekauc; William R. Roberts; Christine Hampe
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Resolution capability and the mask error enhancement function (MEEF) for ArF and KrF lithography
Author(s): Marina V. Plat; Chris A. Spence; Christopher F. Lyons; Amada Wilkison
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Effects of mask bias on the mask error enhancement factor (MEEF) of contact holes
Author(s): Doris Kang; Stewart A. Robertson; Michael T. Reilly; Edward K. Pavelchek
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Comparison study on mask error factor in 100-nm ArF and KrF lithography
Author(s): Tae-Seung Eom; Yoon-Suk Hyun; Cheol-Kyun Kim; Cheol-Kyu Bok; Ki-Soo Shin
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Mask error enhancement factor for sub-0.13-um lithography
Author(s): Sia-Kim Tan; Qunying Lin; Chenggen Quan; Cho Jui Tay; Alex K. See
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Hidden CD errors due to reticle imperfection
Author(s): Z. Mark Ma; Sandra Zheng
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Lithography challenges of dual-damascence process in 0.13 um era
Author(s): Li-Jui Chen; Lin-Hung Shiu; Chern-Shyan Tsai; Ching-Hsu Chang; Tsung-Kuei Kang; Shuo-Yen Chou
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Evaluating device design rules based on lithographic capability
Author(s): Scott P. Warrick; Chris J. Smith; Matt Monroe; Carroll Casteel; Mark Zaleski
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100-nm gate lithography for double-gate transistors
Author(s): Azalia A. Krasnoperova; Ying Zhang; Inna V. Babich; John Treichler; Jung H. Yoon; Kathryn Guarini; Paul M. Solomon
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Process latitude comparison of advanced DUV photoresists to latest-generation 193-nm photoresists
Author(s): Lori Anne Joesten; Michael T. Reilly; Frank T.G.M. Linskens; Christiane Jehoul; Colin R. Parker
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Characterization study of an aqueous developable photosensitive polyimide on 300-mm wafers
Author(s): Warren W. Flack; Scott Kulas; Craig L. Franklin
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Process improvements for ultrathick photoresist using a broadband stepper
Author(s): Warren W. Flack; Ha-Ai Nguyen; Elliott Sean Capsuto
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When is bilayer thin-film imaging suitable: comparison with single-layer resists
Author(s): Scott Halle; Alan C. Thomas; Michael Armacost; Timothy J. Dalton; Xiaochun Chen; Scott J. Bukofsky; Oliver Genz; Zhijian G. Lu; Shahid A. Butt; Zheng Chen; Richard A. Ferguson; Eric Coker; Robert K. Leidy; Qinghuang Lin; Arpan P. Mahorowala; Katherina Babich; Karen E. Petrillo; Marie Angelopoulos; Mark Ignatowicz; Bang Bui
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Photoresist thickness variation due to local and global topography
Author(s): Jin-Young Kim; Heungin Bak; Young-Soo Sohn; Ilsin An; Kyoung-Yoon Bang; Hye-Keun Oh; Woo-Sung Han
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Carbon antireflective coating (ARC) technology for both KrF and ArF lithography
Author(s): Yongbeom Kim; Junghyun Lee; Hanku Cho; Joo-Tae Moon
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Aids for driving lithography hard: wafer-level process control features
Author(s): Emily Fisch; Reginald R. Bowley; James A. Bruce; Orest Bula
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Optimum field-size strategy for DRAM mass production in low-k1 process
Author(s): Chan-Ha Park; Donggyu Yim; Seung-Hyuk Lee; Hyun-Jo Yang; Jae-Hak Choi; Yong-Chul Shin; Choi-Dong Kim; Jae-Sung Choi; Khil-Ohk Kang; Sang-Wook Kim; Dong-Duk Lee; Gyu-Han Yoon
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Molecular base sensitivity studies of various DUV resists used in semiconductor fabrication
Author(s): David Ruede; Monique Ercken; Tom Borgers
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193 lithography and RELACS processing for BEOL lithography
Author(s): Ronald DellaGuardia; Karen E. Petrillo; Jia Chen; Paul Rabidoux; Timothy J. Dalton; Steven J. Holmes; Linda M. Hadel; K. Malone; Arpan P. Mahorowala; S. Greco; Richard A. Ferguson
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Low-dielectric-constant FLARE 2.0 films as bottom antireflective coating layers for ArF lithography
Author(s): Hsuen-Li Chen; Hsu-Chun Cheng; Mei-Yi Li; Fu-Hsiang Ko; Tiao-Yuan Huang; Tien-Chi Chu
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Spectral measurement of ultra line-narrowed F2 laser
Author(s): Osamu Wakabayashi; Jun Sakuma; Toru Suzuki; Hirokazu Kubo; Naoki Kitatochi; Takashi Suganuma; Takanori Nakaike; Takahito Kumazaki; Kazuaki Hotta; Hakaru Mizoguchi; Kiyoharu Nakao; Tadashi Togashi; Yasuo Nabekawa; Shuntaro Watanabe
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Long pulse duration of F2 laser for 157-nm lithography
Author(s): Hidenori Watanabe; Naoki Kitatochi; Kouji Kakizaki; Akifumi Tada; Jun Sakuma; Tatsuya Ariga; Kazuaki Hotta
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Formation of absorption bands in F-doped silica under excimer laser exposure
Author(s): Charlene M. Smith; Lisa A. Moore
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Evaluation of characteristics of VUV optical materials irradiated by F2 laser
Author(s): Yasuo Itakura; Fumika Yoshida; Youichi Kawasa; Akira Sumitani; Osamu Wakabayashi; Hakaru Mizoguchi
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Investigation of attenuated phase-shifting mask material for 157-nm lithography
Author(s): Toshio Onodera; Takahiro Matsuo; Toshiro Itani; Hiroaki Morimoto
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Applications of a grating shearing interferometer at 157 nm
Author(s): Horst Schreiber; Paul G. Dewa; Michael M. Dunn; Richard Hordin; Stephen K. Mack; Bryan D. Statt; Paul Jay Tompkins
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157-nm Twyman-Green interferometer for lens testing
Author(s): Bryan D. Statt; Paul G. Dewa; Stephen K. Mack; Horst Schreiber; Bryan D. Stone; Paul Jay Tompkins
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Advanced VUV spectrometer for F2 laser metrology
Author(s): Eckehard D. Onkels; German Rylov; Richard L. Sandstrom
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Study of obscuration in catadioptric lenses
Author(s): Martin McCallum; Bruce W. Smith; Steve Bassett; Julian S. Cashmore; James E. Webb
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Long-run-time performance characteristics of a line-selected 2-kHz F2 laser for optical microlithography
Author(s): Georg Soumagne; Shinji Nagai; Naoto Hisanaga; Shinobu Nanzai; Yoshinori Ochiishi; Ayako Ohbu; Junichi Fujimoto; Hakaru Mizoguchi
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Optical damage testing of materials for use in 157-nm photolithographic systems
Author(s): Richard G. Morton; Todd J. Embree; Zsolt Bor; Chris K. Van Peski
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Challenge of the F2 laser for dioptric projection system
Author(s): Tatsuya Ariga; Hidenori Watanabe; Takahito Kumazaki; Naoki Kitatochi; Kotaro Sasano; Yoshifumi Ueno; Toshihiro Nishisaka; Ryoichi Nohdomi; Kazuaki Hotta; Hakaru Mizoguchi; Kiyoharu Nakao
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Mechanical analysis of hard pellicles for 157-nm lithography
Author(s): Phillip L. Reu; Andrew R. Mikkelson; Michael P. Schlax; Eric P. Cotte; Lowell K. Siewert; Roxann L. Engelstad; Edward G. Lovell; Giang T. Dao; Jun-Fei Zheng
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Advanced F2-lasers for 157-nm lithography
Author(s): Klaus Vogler; Ingo Klaft; Frank Voss; Igor Bragin; Elko Bergmann; Tamas Nagy; Norbert Niemoeller; Rainer Paetzel; Sergei V. Govorkov; Gongxue Hua
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Wavelength stabilization in an excimer laser source using piezoelectric active vibration control
Author(s): Ronald L. Spangler; Robert N. Jacques; Daniel Brown; J. Martin Algots; William N. Partlo
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Next-generation 193-nm laser for sub-100-nm lithography
Author(s): Thomas P. Duffey; Gerry M. Blumenstock; Vladimir B. Fleurov; Xiaojiang Pan; Peter C. Newman; Holger Glatzel; Tom A. Watson; J. Erxmeyer; Ralf Kuschnereit; Bernhard Weigl
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Investigation of cross-field wavefront aberrations of KrF lithography exposure systems as a function of excimer laser bandwidth
Author(s): Ivan Lalovic; Armen Kroyan; Nigel R. Farrar; Dennis Taitano; Paolo Zambon; Adlai H. Smith
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Ultrahigh-repetition-rate ArF excimer laser with long pulse duration for 193-nm lithography
Author(s): Kouji Kakizaki; Takashi Matsunaga; Yoichi Sasaki; Toyoharu Inoue; Satoshi Tanaka; Akifumi Tada; Hiroaki Taniguchi; Motohiro Arai; Tatsushi Igarashi
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Challenges of laser spectrum metrology in 248- and 193-nm lithography
Author(s): Alexander I. Ershov; Scot Smith
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Ultranarrow-bandwidth 4-kHz ArF excimer laser for 193-nm lithography
Author(s): Takashi Saito; Takashi Matsunaga; Ken-ichi Mitsuhashi; Katsutomo Terashima; Takeshi Ohta; Akifumi Tada; Takanobu Ishihara; Masaya Yoshino; Hiroaki Tsushima; Tatsuo Enami; Hitoshi Tomaru; Tatsushi Igarashi
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Br lamp for F2 laser wavelength calibration
Author(s): Masaki Yoshioka; Tetsuya Kitagawa; Tomoyoshi Arimoto; Hiromitsu Matsuno; Tatsumi Hiramoto; Toru Suzuki; Kazuaki Hotta
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Effects of 95% integral vs. FWHM bandwidth specifications on lithographic imaging
Author(s): Armen Kroyan; Ivan Lalovic; Nigel R. Farrar
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High-resolution multigrating spectrometer for high-quality deep-UV light source production
Author(s): Toru Suzuki; Hirokazu Kubo; Takashi Suganuma; Toshio Yamashita; Osamu Wakabayashi; Hakaru Mizoguchi
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ArF-laser-induced absorption in fused silica exposed to low fluence at 2000 Hz
Author(s): Johannes Moll
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Linewidth asymmetry study to predict aberration in lithographic lenses
Author(s): Jongwook Kye; Mircea V. Dusa; Harry J. Levinson
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Lens aberration measurement and analysis using a novel pattern
Author(s): Byung-Ho Nam; Byeong-Ho Cho; Jong O Park; Dong-Seok Kim; SungJin Baek; JongHo Jeong; ByungSub Nam; Young Ju Hwang; Young Jin Song
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Birefringence dispersion in fused silica for DUV lithography
Author(s): Richard Priestley
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Analyses of imaging performance degradation caused by birefringence residual in lens materials
Author(s): Yasuyuki Unno; Akiyoshi Suzuki
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Evaluating the impact of spherical aberration on sub-0.2-um contact/via hole patterning
Author(s): Shuo-Yen Chou; Jen-Chung Lou; Chih-Ming Lai; Fu-Jye Liang; Li-Jui Chen
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Error separation technique for microlithographic lens testing with null configurations
Author(s): Stephen K. Mack; Timothy Rich; James E. Webb; Paul G. Dewa; Horst Schreiber
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Testing of optical components for microlithography at 193-nm and 157-nm
Author(s): Klaus R. Mann; Oliver Apel; G. Eckert; Christian Goerling; Uwe Leinhos; Bernd Schaefer
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Effect of hole shape error on lithography process window
Author(s): Rakesh Kumar; Moitreyee Mukherjee-Roy; Cher-Huan Tan
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Detection of focus and spherical aberration by use of a phase grating
Author(s): Joseph P. Kirk; Scott Schank; Chieh-yu Lin
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Aberration analysis using reconstructed aerial images of isolated contacts on attenuated phase-shift masks
Author(s): Franz X. Zach; Chieh-yu Lin; Joseph P. Kirk
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Fine-tune lens-heating-induced focus drift with different process and illumination settings
Author(s): Yuanting Cui
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Application of the aberration ring test (ARTEMIS) to determine lens quality and predict its lithographic performance
Author(s): Marco H. P. Moers; Hans van der Laan; Mark Zellenrath; Wim de Boeij; Neil A. Beaudry; Kevin D. Cummings; Adriaan van Zwol; Arthur Brecht; Rob Willekers
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Impact of flare on CD variation for 248-nm and 193-nm lithography systems
Author(s): Anatoly Bourov; Lloyd C. Litt; Lena Zavyalova
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Further pursuit of correlation between lens aberration content and imaging performance
Author(s): Steve D. Slonaker
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How lens aberrations influence lithographic imaging and how to reduce their effects
Author(s): Gerhard Kunkel; Wolfgang Henke; Ina Voigt
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Achieving low-wavefront specifications for DUV lithography: impact of residual stress in HPFS fused silica
Author(s): Julie L. Ladison; Joseph F. Ellison; Douglas C. Allan; David R. Fladd; Andrew W Fanning; Richard Priestley
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Design and fabrication of customized illumination patterns for low-k1 lithography: a diffractive approach
Author(s): Marc D. Himel; Robert E. Hutchins; Jamey C. Colvin; Menelaos K Poutous; Alan D. Kathman; Adam S. Fedor
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Optimal positions for SB assignment and the specification of SB width variation
Author(s): Chih-Ming Lai; Ru-Gun Liu; Tsai-Sheng Gau; Fu-Jye Liang; Shuo-Yen Chou; Lin-Hung Shiu
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Improvement of metal photo process margin with OPC and CMP for 0.14 um DRAM technology node and beyond
Author(s): Dong-il Bae; Jun-Sik Bae; Seung-Won Sung; Ji-Soong Park; Sang-Uhk Rhie; Dong-Won Shin; Tae-Young Chung; Kinam Kim
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Challenges for the 100-nm node
Author(s): Harry Sewell; Pankaj Raval; Victor F. Bunze
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Printing high-density patterns with dark-field 193-nm lithography
Author(s): Obert R. Wood; Donald L. White; Donald M. Tennant; Raymond A. Cirelli; James R. Sweeney; Myrtle I. Blakey; Joseph E. Griffith
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Experimental model verification of the thermal response of optical reticles
Author(s): Amr Y. Abdo; Phillip L. Reu; Michael P. Schlax; Roxann L. Engelstad; William A. Beckman; John W. Mitchell; Edward G. Lovell
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Accuracy issues in the finite difference time domain simulation of photomask scattering
Author(s): Thomas V. Pistor
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Simulation of optical lithography from distorted photomasks
Author(s): Zheng Cui; Jinglei Du; Yangsu Zheng; Yongkang Guo
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LAVA web-based remote simulation: enhancements for education and technology innovation
Author(s): Sang Il Lee; Ka Chun Ng; Takashi Orimoto; Jason Pittenger; Toshi Horie; Konstantinos Adam; Mosong Cheng; Ebo H. Croffie; Yunfei Deng; Frank E. Gennari; Thomas V. Pistor; Garth Robins; Mike V. Williamson; Bo Wu; Lei Yuan; Andrew R. Neureuther
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