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Proceedings of SPIE Volume 4287

In-Plane Semiconductor Lasers V
Editor(s): Luke J. Mawst; Ramon U. Martinelli
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Volume Details

Volume Number: 4287
Date Published: 6 June 2001
Softcover: 23 papers (236) pages
ISBN: 9780819439659

Table of Contents
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Mid-IR interband cascade lasers: progress toward high performance
Author(s): John D. Bruno; Rui Q. Yang; John L. Bradshaw; John T. Pham; Donald E. Wortman
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High-performance quantum cascade lasers grown by gas-source molecular beam epitaxy
Author(s): Manijeh Razeghi; Steven Slivken; Abbes Tahraoui; Anthony W. Matlis
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Improved InAs/AlSb/GaSb heterostructures for quantum cascade laser application
Author(s): Xavier Marcadet; Isabelle Prevot; Cyril Becker; Olivier Durand; Renato Bisaro; Francois H. Julien; Borge Vinter; Carlo Sirtori
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Beam quality of mid-infrared angled-grating distributed-feedback lasers
Author(s): William W. Bewley; Igor Vurgaftman; Robert E. Bartolo; Michael J. Jurkovic; Christopher L. Felix; Jerry R. Meyer; Hao Lee; Ramon U. Martinelli; George W. Turner; M. J. Manfra
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GaN-based violet laser diodes
Author(s): Shinichi Nagahama; Naruhito Iwasa; Masayuki Senoh; Toshio Matsushita; Yasunobu Sugimoto; Hiroyuki Kiyoku; Tokuya Kozaki; Masahiko Sano; Hiroaki Matsumura; Hitoshi Umemoto; Kazuyuki Chocho; Takashi Mukai
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High-efficiency and high-power laser diodes for CD-R/RW and DVD-RAM/RW
Author(s): Akihiro Shima; Motoharu Miyashita; Zempei Kawazu; Harumi Nishiguchi; Motoko Sasaki; Yoshihisa Tashiro; Tetsuya Yagi; Etsuji Omura; Yoshihiro Kokubo
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Enhanced-performance operation of InGaN MQW lasers with air/nitride-distributed Bragg reflector defined by focused ion beam etching
Author(s): Claudio Marinelli; Laurence J. Sargent; Michal Bordovsky; Adrian Wonfor; Judy M. Rorison; Richard V. Penty; Ian H. White; Peter J. Heard; Ghulam Hasnain; Richard P. Schneider
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High-power coherent GaAs-based monolithic diode lasers
Author(s): Dan Botez
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High-power long-wavelength lasers using GaAs-based quantum dots
Author(s): Nikolai N. Ledentsov; Victor M. Ustinov; Vitaly A. Shchukin; Dieter Bimberg; James A. Lott; Zhores I. Alferov
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High-power laser bars for 70-W cw (808 nm): a comparison between SQW and DQW
Author(s): Martin Behringer; Gerhard Herrmann; Stefan Groetsch; W. Teich; Johann Luft; Bruno D. Acklin; Lutz Korte; Christian Hanke; Marcel Marchiano
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Performance of 3-W/100-um stripe diode laser at 950 and 810 nm
Author(s): Goetz Erbert; Gerhard Beister; Frank Bugge; Arne Knauer; Ralf Huelsewede; Wolfgang Pittroff; Juergen Sebastian; Hans Wenzel; Marcus Weyers; Guenther Traenkle
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High reliability and facet temperature reduction in high-power 0.8-um Al-free active-region diode lasers
Author(s): Toshiro Hayakawa
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Large optical cavity waveguides for high-power diode laser applications
Author(s): V. Malyarchuck; Jens Wolfgang Tomm; T. Guenther; R. Mueller; R. Kunkel; Christoph Lienau; Johann Luft
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Requirements for uncooled direct laser modulation at 10 Gb/s
Author(s): Kevin A. Williams; Richard V. Penty; Ian H. White; Mark Silver
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External cavity multiline semiconductor laser for WDM applications
Author(s): Igor S. Moskalev; Sergey B. Mirov; Tasoltan T. Basiev; Vladimir V. Fedorov; Gary J. Grimes; I. Edward Berman
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Bandwidth narrowing of a diode laser array by beam injection using photorefractive double phase conjugation
Author(s): Andreas Hermerschmidt; F. Wang; Peter Pogany; Hans Joachim Eichler
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Tunable multisection Fabry-Perot laser
Author(s): Lalitha Ponnampalam; Richard G. S. Plumb; S. Naseem
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High-quality GaInNAs active layers for 1.3-um lasers
Author(s): Takeshi Kitatani; Masahiko Kondow; Toshiaki Tanaka
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GaInNAs-based long-wavelength lasers grown by MOCVD
Author(s): Shunichi Sato
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MOCVD-grown 1.3-um InGaAsN multiple quantum well lasers incorporating GaAsP strain-compensation layers
Author(s): Steven R. Kurtz; Robert M. Sieg; Andrew A. Allerman; Kent D. Choquette; Ryan L. Naone
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Carrier confinement in strain-compensated InGaAs/GaAsP quantum well laser with temperature-insensitive threshold
Author(s): Wataru Susaki; Hiroyuki Yaku; Toshiro Hayakawa; Toshiaki Fukunaga; Hideki Asano
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InGaAs/GaAsP/InGaP strain-compensated quantum well (lambda=1.17 um) diode lasers on GaAs
Author(s): Nelson Tansu; Luke J. Mawst
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High-brightness laser diodes using angular filtering by total reflection
Author(s): Joseph Rogg; Konstantin Boucke; Marc T. Kelemen; Franz Rinner; Wilfried Pletschen; Rudolf Kiefer; Martin Walther; Michael Mikulla; Reinhart Poprawe; Guenter Weimann
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