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Proceedings of SPIE Volume 4227

Advanced Microelectronic Processing Techniques
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Volume Details

Volume Number: 4227
Date Published: 24 October 2000
Softcover: 31 papers (232) pages
ISBN: 9780819438997

Table of Contents
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Thin film epitaxy on Si for microelectronics
Author(s): Jing Zhang; Eng Soon Tok; Guy Breton; Nick J. Woods
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Epitaxial CoSi2 on Si(100) by oxide-mediated epitaxy
Author(s): Mark William Kleinschmit; Mark Yeadon; J. Murray Gibson
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Characterization of Si-doped GaInAsP/GaAs grown by solid source molecular beam epitaxy
Author(s): Dao Hua Zhang; X. Z. Wang; Hai Qun Zheng; Soon Fatt Yoon; Chan Hin Kam
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Self-organized growth of InP on GaAs substrate by MOCVD
Author(s): Benzhong Wang; Soo-Jin Chua
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Pseudomorphic InxGa1-xAs/InyAl1-yAs high-electron mobility transistor structures grown by solid source molecular beam epitaxy
Author(s): Hai Qun Zheng; Kaladhar Radhakrishnan; Soon Fatt Yoon; Geok Ing Ng
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Transmission line measurement of gold contact on the arsenic-ion-implanted GaAs after rapid thermal annealing
Author(s): Gong-Ru Lin; Jui Lin Chang
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High microwave performance of InGaP/GaAs HBT with beryllium-doped base grown by solid source MBE
Author(s): Pan Yang; Hai Qun Zheng; Lye Heng Chua; Yongzhong Xiong; Hong Wang; Kaladhar Radhakrishnan; Soon Fatt Yoon; Geok Ing Ng
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InP/InGaAs/InP double heterojunction bipolar transistors with improved dc and microwave performance grown by solid source molecular beam-epitaxy
Author(s): Hong Wang; Geok Ing Ng; Hai Qun Zheng; Kaladhar Radhakrishnan; Soon Fatt Yoon; Yongzhong Xiong; Lye Heng Chua; Hongru Yang; Subrata Halder; Chee Leong Tan
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1.54-um erbium luminescence in silicon-germanium
Author(s): Md. Quamrul Huda; Md. S. Islam
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Luminescence properties of Nd3+-doped LiNbO3 and LiTaO3 sol-gel powders
Author(s): Shi De Cheng; Chan Hin Kam; Yee Loy Lam; Kantisara Pita; Srinivasa Buddhudu
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Advanced integrated process and ESD protection structure to optimize the GOI, HCE, and ESD performance for subquarter micron technology
Author(s): Jiaw-Ren Shih; J. H. Lee; Huey Liang Hwang
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Effect of surface conditions on the measurement of minority carrier diffusion lengths using the surface photovoltage technique
Author(s): Zhenhua Zhang; Leng Seow Tan; Shee Meng Koh; Hong Mei Liu; Dirk Flottman
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Analysis of N-channel transistor punch-through related to STI process
Author(s): Yunqiang Zhang; James Lee; Chock Hing Gan; David Vigar; Ravi Sundaresan
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Spreading resistance profiling of ultrashallow junction NPN BJT with carrier redistribution effect
Author(s): Louison Cheng Peng Tan; Leng Seow Tan; Mook Seng Leong
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Ultrashallow depth profiling of B deltas in Si using a CAMECA IMS 6f
Author(s): Chee Mang Ng; Andrew Thye Shen Wee; C. H. Alfred Huan; Alex K. See
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Use of sample rotation in SIMS profiling of Ta barrier layers to Cu diffusion
Author(s): Rong Liu; Andrew Thye Shen Wee; L. Liu; G. Hao
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Effect of deposition conditions on the properties of HDP-CVD-fluorinated silicon oxide (SiOF)
Author(s): Young Way Teh; Terence Kin Shun Wong; John L. Sudijono; Alex K. See
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Impact of boron penetration on gate oxide reliability and device performance in a dual-gate oxide process
Author(s): Yunqiang Zhang; Chock Hing Gan; Xi Li; James Lee; David Vigar; Ravi Sundaresan
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Importance of oxide capping on the suppression of dopant outdiffusion for salicide block process
Author(s): Hong Liao; Soh Yun Siah; David Vigar
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Application of excimer laser annealing in the formation of ultrashallow p+/n junctions
Author(s): Yung Fu Chong; Kin Leong Pey; Andrew Thye Shen Wee; Alex K. See; C. H. Tung; R. Gopalakrishnan; Yongfeng Lu
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Behavior of Ta thin film as a diffusion barrier in the Cu/barrier/SiO2 system
Author(s): Ji Sheng Pan; Andrew Thye Shen Wee; C. H. Alfred Huan; Jian Wei Chai
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Investigation of near-room-temperature self-annealing of electrochemical-deposited (ECD) blanket copper films
Author(s): Weng Hong Teh; Leong Tee Koh; Shou Mian Chen; Joseph Xie; Chao Yong Li; Pang Dow Foo
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Characterization of Ge nanocrystals in co-sputtered Ge+SiO2 system using Raman and TEM techniques
Author(s): Wuiwui Chauhari Tjiu; S. P. Ng; W. K. Choi; V. Ng; Y. W. Ho
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Influence of high-substrate-bias voltage on the characteristics of DLC coatings
Author(s): Sheeja Divakaran; Beng Kang Tay; Shu Ping Lau
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Low threshold current density and high-quantum-efficiency 980-nm cw QW laser
Author(s): Karen Lin Ke; Soo-Jin Chua; Wei Jun Fan
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Effects of Zn doping in the substrate on the quantum well intermixing in GaAs/Al0.24Ga0.76As single quantum well structures
Author(s): Feng Zhao; In Wang Choi; Peter Hing; Shu Yuan; Teik Kooi Ong; Boon Siew Ooi; Jian Jiang; Michael C. Y. Chan; Charles C. Surya; E. Herbert Li
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Implanted boron distribution in p+n structures using scanning capacitance microscopy
Author(s): Y. L. Teo; Kin Leong Pey; Wai Kin Chim; Yung Fu Chong
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Mechanism of instability on device's characteristics due to intermetal dielectrics with low-k material and the modified process
Author(s): Jiaw-Ren Shih; J. C. Hwang; R. Y. Shiue; H. L. Hwang; John T. Yue
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Effect of flash copper on Cu diffusion
Author(s): Dao Hua Zhang; Seow Wee Loh; Chao Yong Li; Rong Liu; Andrew Thye Shen Wee; L. Zhang; Y. K. Lee
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Plasma removal of post-RIE residues for dual-damascence processing
Author(s): Vladimir N. Bliznetsov; Woo-Min Jo
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Improvement of green emission from Tb3+:GdOBr phosphors by Ce3+ codoping
Author(s): Shi De Cheng; Chan Hin Kam; Yee Loy Lam; Kantisara Pita; Srinivasa Buddhudu
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