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PROCEEDINGS VOLUME 4186

20th Annual BACUS Symposium on Photomask Technology
Editor(s): Brian J. Grenon; Giang T. Dao
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Volume Details

Volume Number: 4186
Date Published: 22 January 2001
Softcover: 102 papers (960) pages
ISBN: 9780819438492

Table of Contents
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Lithographic performance results for a new 50-kV electron-beam mask writer
Author(s): Varoujan Chakarian; Stephen R. Bylciw; Charles A. Sauer; David Trost; Marek Zywno; Robin Teitzel; Frederick Raymond; Frank E. Abboud
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New architecture for laser pattern generators for 130 nm and beyond
Author(s): Ulric B. Ljungblad; Torbjoern Sandstrom; Hans Buhre; Peter Duerr; Hubert K. Lakner
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Performance of JBX-9000MV with negative-tone resist for 130-nm reticle
Author(s): Naoki Takahashi; Masayoshi Tsuzuki; Jun Kotani; Jun Yoshida; Yuji Kodaira; Yuko Oi; Yoshiro Yamada; Yuichi Matsuzawa
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New concept photomask repeater with stitching exposure technique
Author(s): Nobuyuki Irie; Koji Muramatsu; Yuuki Ishii; Nobutaka Magome; Toshikazu Umatate; Suigen Kyoh; Shun-Ichiro Tanaka; Soichi Inoue; Iwao Higashikawa; Ichiro Mori; Katsuya Okumura
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Improved throughput in 0.6-NA laser reticle writers
Author(s): Gregory E. Valentin; Henry Chris Hamaker; Jay P. Daniel; Vishal Garg; Daniel R. Sprenkel
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Process development for 257-nm photomask fabrication using environmentally stable chemically amplified photoresists
Author(s): Jeff A. Albelo; Benjamen M. Rathsack; Peter Y. Pirogovsky
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Plasma etch of binary Cr masks: CD uniformity study of photomasks utilizing varying Cr loads: III
Author(s): Chris Constantine; Russell J. Westerman; Jason Plumhoff
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Chrome dry etch process characterization using surface nanoprofiling
Author(s): Guenther G. Ruhl; Ralf Dietrich; Ralf Ludwig; Norbert Falk; Troy B. Morrison; Brigitte C. Stoehr
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Experimental study on the possibility of chemically amplified resists for mask production for device generations < 180 nm
Author(s): Chang-Hwan Kim; Chan-Uk Jeon; Seong-Woon Choi; Woo-Sung Han; Jung-Min Sohn
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Mask manufacturing rule check: how to save money in your mask shop
Author(s): Martin C. Keck; Wolfram Ziegler; Roman Liebe; Torsten Franke; Gerd Ballhorn; Matthias Koefferlein; Joerg Thiele
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Using manufacturing rule check to prescreen reticle inspection databases
Author(s): Charles H. Howard; Paul DePesa; Curt J. Linder
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Methods used to streamline data preparation for memory products
Author(s): Paul DePesa; Wolfgang Leitermann
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ASIC data preparation management for OPC
Author(s): Timothy G. Dunham; William C. Leipold
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Efficient automated tapeout system
Author(s): William A. Krieger; Chana Nasamran
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FIB-based local deposition of dielectrics for phase-shift mask modification
Author(s): Heinz D. Wanzenboeck; Martin Verbeek; Wilhelm Maurer; Emmerich Bertagnolli
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Advanced FIB mask repair technology for ArF lithography: II
Author(s): Shinji Kubo; Koji Hiruta; Hiroaki Morimoto; Anto Yasaka; Ryoji Hagiwara; Tatsuya Adachi; Yasutaka Morikawa; Kazuya Iwase; Naoya Hayashi
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Multibeam high-resolution UV wavelength reticle inspection
Author(s): Chih-Chien Hung; Chue-San Yoo; Chia-Hui Lin; William Waters Volk; James N. Wiley; Steve Khanna; Steve Biellak; D. Wang
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In-process defect inspection and characterization study for dry etching chrome-on-quartz binary masks
Author(s): Weidong Cai; Henry H. Kamberian; Douglas G. Mattis; Kraig Morris; Van Tu
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Correlation of reticle defects detectability and repairs to ArF wafer printability for 0.13-um design rule with binary OPC/SB mask
Author(s): Khoi A. Phan; Chris A. Spence; John Riddick; Jerry Xiaoming Chen; Matt J. Lamantia; Hugo A. Villa
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Practical defect-sizing issues for UV inspection of 248-nm embedded attenuated PSM contact layer
Author(s): James A. Reynolds
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Pellicle-induced distortions in advanced optical reticles
Author(s): William H. Semke; Lowell K. Siewert; Andrew R. Mikkelson; Eric A. Risius; Ning Tang; Roxann L. Engelstad; Edward G. Lovell; Jun-Fei Zheng; Giang T. Dao
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Reticle error correction for lithography tool qualification benefits and limitations
Author(s): Ton Kiers; Melchior Mulder; Jan B.P. van Schoot; Jacques A.C. Waelpoel; Robert Uitz
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Analysis of photomask distortion caused by blank materials and open ratios
Author(s): Seong-Yong Moon; Won-Tai Ki; Seung-Hune Yang; Tae Moon Jeong; Seong-Woon Choi; Woo-Sung Han; Jung-Min Sohn
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Innovations in lithography metrology for characterization of phase-shift mask materials
Author(s): Dale A. Harrison; John C. Lam; A. Rahim Forouhi
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UV inspection of EUV and SCALPEL reticles
Author(s): Donald W. Pettibone; Noah Bareket; Ted Liang; Alan R. Stivers; Scott Daniel Hector; Pawitter J. S. Mangat; Douglas J. Resnick; Michael J. Lercel; Mark Lawliss; Christopher Magg; Anthony E. Novembre; Reginald C. Farrow
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Ion projection lithography: new insights and results of this NGL technology
Author(s): Thomas Struck; Albrecht Ehrmann; Rainer Kaesmaier; Hans Loeschner
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157-nm lithography for 100-nm generation and beyond: progress and status
Author(s): Giang T. Dao; Yan A. Borodovsky
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Materials for an attenuated phase-shifting mask in 157-nm lithography
Author(s): Takahiro Matsuo; Toshio Onodera; Toshiro Itani; Hiroaki Morimoto; Takashi Haraguchi; Koichiro Kanayama; Tadashi Matsuo; Masao Otaki
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Printing 0.13-um contact holes using 193-nm attenuated phase-shifting masks
Author(s): Chun-Ming Albert Wang; Shy-Jay Lin; Chia-Hui Lin; Yao Ching Ku; Anthony Yen
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KrF attenuated PSM defect printability and detectability for 120-nm actual DRAM patterning process
Author(s): Juhwan Kim; Sang-Chul Kim; Hee-Chun Kim; Sang-Lee Lee; Yong-Kyoo Choi; Young-Mog Ham; Oscar Han
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Realization of mass production for 130-nm node and future applicatiton for high transmission using ZrSi-based attenuated phase-shift mask in ArF lithography
Author(s): Toshihiro Ii; Tadashi Saga; Yusuke Hattori; Takashi Ohshima; Masao Otaki; Masahide Iwakata; Takashi Haraguchi; Koichiro Kanayama; Tsukasa Yamazaki; Nobuhiko Fukuhara; Tadashi Matsuo
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Effect of mask reduction ratio in alternating phase-shift masks
Author(s): In-Gyun Shin; Sung-Ho Lee; Yong-Hoon Kim; Seong-Woon Choi; Woo-Sung Han; Jung-Min Sohn; Tong-Kun Lim
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Plasma etching of quartz for the fabrication of alternating aperture phase-shift photomasks: etch rate uniformity study utilizing a next-generation ICP source
Author(s): Russell J. Westerman; Chris Constantine; Jason Plumhoff; C. Strawn
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Proximity effects in alternating aperture phase-shifting masks
Author(s): Christophe Pierrat
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Fabricating 0.10-um line patterns using attenuated phase-shift masks
Author(s): Haruo Iwasaki
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Potentialities of sub-100-nm optical lithography of alternating and phase-edge phase-shift mask for ArF lithography
Author(s): Sang-Sool Koo; Hee-Bom Kim; Hyoung-Soon Yune; Jee-Suk Hong; Seung-Weon Paek; Tae-Seung Eom; Chang-Nam Ahn; Young-Mog Ham; Ki-Ho Baik; Kyu-Yong Lee; Lee-Ju Kim; Hong-Seok Kim
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Sub-120-nm technology compatibility of attenuated phase-shift mask in KrF and ArF lithography
Author(s): Young-Mog Ham; Seo-Min Kim; Sang-Jin Kim; Sang-Man Bae; Young-Deuk Kim; Ki-Ho Baik
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Balancing of alternating phase-shifting masks for practical application: modeling and experimental verification
Author(s): Uwe A. Griesinger; Leonhard Mader; Armin Semmler; Wolfgang Dettmann; Christoph Noelscher; Rainer Pforr
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High-performance devices in the new century: optical lithography and mask strategy for 0.13-um SoC (Photomask Japan 2000 panel discussion review)
Author(s): Hiroichi Kawahira; Vic Nagano
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Phase phirst! An improved strong-PSM paradigm
Author(s): David Levenson; John S. Petersen; David J. Gerold; Chris A. Mack
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Modeling defect-feature interactions in the presence of aberrations
Author(s): Andrew R. Neureuther; Shoji Hotta; Konstantinos Adam
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Requirements for reticle and reticle material for 157-nm lithography: requirements for hard pellicle
Author(s): Junji Miyazaki; Toshiro Itani; Hiroaki Morimoto
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Impact of alternating phase-shift mask quality on 100-nm gate lithography
Author(s): Tomohiko Yamamoto; Naoyuki Ishiwata; Satoru Asai
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Technological challenges in implementation of alternating phase-shift mask
Author(s): Wilman Tsai; Qi-De Qian; Ken Mr. Buckmann; Wen-Hao Cheng; Long He; Brian Irvine; Marilyn Kamna; Yulia O. Korobko; Michael Kovalchick; Steven M. Labovitz; R. Talevi; Jeff N. Farnsworth
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Evaluation of molybdenum silicide for use as a 193-nm phase-shifting absorber in photomask manufacturing
Author(s): Michael S. Hibbs; Masao Ushida; Katherina Babich; Hideaki Mitsui; Anatoly Bourov
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Emergence of assist feature OPC era in sub-130-nm DRAM devices
Author(s): Byeongsoo Kim; Insung Kim; Gisung Yeo; Junghyun Lee; Ji-Hyeon Choi; Hanku Cho; Joo-Tae Moon
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Eddy current evaluation for a high-resolution EB system
Author(s): Naoharu Shimomura; Munehiro Ogasawara; Kiyoshi Hattori; Jun Takamatsu; Hitoshi Sunaoshi; Shusuke Yoshitake; Yuuji Fukudome; Kiminobu Akeno
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Effect of beam blur in mask fabrication
Author(s): Seung-Hune Yang; Won-Tai Ki; Seong-Yong Moon; Tae Moon Jeong; Seong-Woon Choi; Woo-Sung Han; Jung-Min Sohn
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Integration of the Micronic Omega6500 into the mask manufacturing environment
Author(s): Peter D. Buck; Mans Bjuggren; Hartmut Buenning; Vishal Garg; Johan Larsson; Tomas Vikholm
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Localized resist heating due to electron-beam patterning during photomask fabrication
Author(s): Alexander C. Wei; William A. Beckman; Roxann L. Engelstad; John W. Mitchell; Thanh N. Phung; Jun-Fei Zheng
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Management of pattern generation system based on i-line stepper
Author(s): Suigen Kyoh; Satoshi Tanaka; Soichi Inoue; Iwao Higashikawa; Ichiro Mori; Katsuya Okumura; Nobuyuki Irie; Koji Muramatsu; Yuuki Ishii; Nobutaka Magome; Toshikazu Umatate
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Comprehensive simulation of e-beam lithography processes using PROLITH/3D and TEMPTATION software tools
Author(s): Igor Yu. Kuzmin; Chris A. Mack
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Improved process control of photomask fabrication in e-beam lithography
Author(s): Byung-Cheol Cha; Jin-Hong Park; Yo-Han Choi; Jin-Min Kim; Woo-Sung Han; Hee-Sun Yoon; Jung-Min Sohn
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Investigations of CD variation in Cr dry etching process
Author(s): Hitoshi Handa; Satoshi Yamauchi; Kouji Hosono; Hisatsugu Shirai
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Evaluation of photomask blank layer parameters with an x-ray reflection method and photomask property distribution
Author(s): Teruyoshi Hirano; Atsushi Hayashi; Yoshihiro Hino; Hiroshi Wada; Masao Otaki; Ryuji Matsuo
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Dry etching technology of Cr and MoSi layers using high-density plasma source
Author(s): Hyuk-Joo Kwon; Kwang-Sik Oh; Byung-Soo Chang; Boo-Yeon Choi; Kyung-Ho Park; Soo-Hong Jeong
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Develop process optimization for CD uniformity improvement
Author(s): Jae-Cheon Shin; Joon-Il Won; Ho-Yong Jung; Mun-Sik Kim; Yong-Kyoo Choi; Oscar Han
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Evaluation of loading effect of NLD dry etching: II
Author(s): Tatsuya Fujisawa; Takayuki Iwamatsu; Koji Hiruta; Hiroaki Morimoto; Noriyuki Harashima; Takaei Sasaki; Mutsumi Hara; Kazuhide Yamashiro; Yasushi Okubo; Yoichi Takehana
Show Abstract
Laser resist screening for iP3500/3600 replacement for advanced reticle fabrication
Author(s): Fumiko Ota; Hideo Kobayashi; Takao Higuchi; Keishi Asakawa
Show Abstract
CARs blanks feasibility study results for advanced EB reticle fabrication
Author(s): Masahiro Hashimoto; Hideo Kobayashi; Yasunori Yokoya
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Characterization of an acetal-based chemically amplified resist for 257-nm laser mask fabrication
Author(s): Benjamen M. Rathsack; Cyrus Emil Tabery; Jeff A. Albelo; Peter D. Buck; C. Grant Willson
Show Abstract
Effective data compaction algorithm for vector scan EB writing system
Author(s): Shinichi Ueki; Isao Ashida; Hiroichi Kawahira
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Pushing SRAM densities beyond 0.13-um technology in the year 2000
Author(s): Orest Bula; Rebecca D. Mih; Eric Jasinski; Dennis Hoyniak; Andrew Lu; Jay Harrington; Anne E. McGuire
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Improvement of the efficiency of OPC data handling
Author(s): Nobuhito Toyama; Takayuki Ikemoto; Kouji Ishida; Hiroyuki Miyashita
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OPC reticle inspection techniques
Author(s): Aihua Dong; Bryan W. Reese
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Evaluation of a multiple-beam defect inspection platform using an integrated reference mask
Author(s): Jerry Xiaoming Chen; Franklin D. Kalk; Anthony Vacca; Scott Pomeroy; Jordan Carroll
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Soft defect printability: correlation to optical flux-area measurements
Author(s): Darren Taylor; Peter Fiekowsky
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Neolithography Consortium: a progress report
Author(s): James E. Potzick
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Characterization of Be-based multilayer masks using x-ray reflectivity and Auger electron spectroscopy
Author(s): James R. Wasson; Pawitter J. S. Mangat; Jon M. Slaughter; Scott Daniel Hector; Sasa Bajt; Patrick A. Kearney
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SCALPEL mask parametric study
Author(s): Gerald A. Dicks; Roxann L. Engelstad; Edward G. Lovell; James Alexander Liddle
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Evaluation of an advanced chemically amplified resist for next-generation lithography mask fabrication
Author(s): Christopher Magg; Michael J. Lercel; Mark Lawliss; Ranee W. Kwong; Wu-Song Huang; Marie Angelopoulos
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Fabrication process and transmission characteristics of SCALPEL mask blanks with thin SiNx membranes
Author(s): Sang-In Han; Pawitter J. S. Mangat; William J. Dauksher; Michael Chor; James Alexander Liddle; Anthony E. Novembre
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Predicting thermomechanical distortions of optical reticles for 157-nm technology
Author(s): Amr Y. Abdo; Roxann L. Engelstad; William A. Beckman; John W. Mitchell; Edward G. Lovell
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Predictive model of the cost of extreme-ultraviolet lithography masks
Author(s): Scott Daniel Hector; Patrick A. Kearney; Claude Montcalm; James A. Folta; Christopher C. Walton; William M. Tong; John S. Taylor; Pei-yang Yan; Charles W. Gwyn
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Dry etching of Ta absorber for EUVL masks
Author(s): Eiichi Hoshino; Taro Ogawa; Naoya Hirano; Hiromasa Hoko; Masashi Takahashi; Hiromasa Yamanashi; Akira Chiba; Masaaki Ito; Shinji Okazaki
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157-nm photomask handling and infrastructure: requirements and feasibility
Author(s): Jerry Cullins; Edward G. Muzio
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Is it time to change mask magnification?
Author(s): Gilbert V. Shelden
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Impact of surface contamination on transmittance of modified fused silica for 157-nm lithography application
Author(s): Jun-Fei Zheng; Ronald Kuse; Arun Ramamoorthy; Giang T. Dao; Fu-Chang Lo
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Double-step process for manufacturing reticle to reduce gate CD variation
Author(s): Makoto Kozuma; Masaya Komatsu; Rieko Arakawa; Seiji Kubo; Tatsuya Takahashi; John Jensen; Hyun-Suk Bang; Il-Ho Lee; Cheol Shin; Hong-Seok Kim; Keun-Won Park
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Comparison study between stepper (5x) and scanner (4x) for gate CD control using total process-proximity-based correction
Author(s): Byung-Ho Nam; Dong-Seok Kim; Byung-Jin Cho; Nam-Ki Seok; Jae Kwan Jeong; Sang-Pye Kim; Sang-Woo Kang; Young Ju Hwang; Young Jin Song
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Development of simplified process for KrF excimer halftone mask with chrome-shielding method: II
Author(s): Shinji Kobayashi; Kunio Watanabe; Kiyochige Ohmori
Show Abstract
Ion-beam sputter-deposited SiN/TiN attenuating phase-shift photoblanks
Author(s): Laurent Dieu; Peter F. Carcia; Hideaki Mitsui; Kunihiko Ueno
Show Abstract
Tritone inspection for embedded phase-shift mask
Author(s): Wen-Hao Cheng; Jeff N. Farnsworth; Edita Tejnil
Show Abstract
Effects of shifter edge topography on through focus performance
Author(s): Shoji Hotta; Thomas V. Pistor; Konstantinos Adam; Andrew R. Neureuther
Show Abstract
Development of photomask fabrication for 100-nm design rule
Author(s): Takashi Inoue; Takuro Horibe; Akihiro Maeda; Yoshiyuki Tanaka
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Development of a MoSi-based bilayer HT-PSM blank for ArF lithography
Author(s): Shuichiro Kanai; Susumu Kawada; Akihiko Isao; Takaei Sasaki; Kazuyuki Maetoko; Nobuyuki Yoshioka
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CD variation analysis technique and its application to the study of PSM mask misalignment
Author(s): Yuri Granik; Nicolas B. Cobb; Emile Y. Sahouria
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Phase and transmission errors aware OPC solution for PSM: feasability demonstration
Author(s): Olivier Toublan; Emile Y. Sahouria; Nicolas B. Cobb
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High-optical-density photomasks for large exposure applications
Author(s): Dan L. Schurz; Warren W. Flack; Makoto Nakamura
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Defect dispositioning using mask printability on attenuated phase-shift production photomasks
Author(s): Justin W. Novak; Benjamin George Eynon; Eric Poortinga; Anja Rosenbusch; Yair Eran
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Establishment of production process and assurance method for alternating phase-shift masks
Author(s): Shiaki M. Murai; Yasuhiro Koizumi; Tatsuhiko Kamibayashi; Hidetaka Saitou; Morihisa Hoga; Yasutaka Morikawa; Hiroyuki Miyashita
Show Abstract
Development of MoSi-based halftone phase-shift blank and mask fabrication for ArF lithography (Photomask Japamn 2000 Best Presentation Award)
Author(s): Hideki Suda; Hideaki Mitsui; Osamu Nozawa; Hitoshi Ohtsuka; Megumi Takeuchi; Naoki Nishida; Yasushi Okubo; Masao Ushida
Show Abstract
New approach to improve CD uniformity based on mask quality
Author(s): Roman Liebe; Carmen Jaehnert; Gidon Gottlib; Yair Eran; Shirley Hemar; Amikam Sade; Anja Rosenbusch
Show Abstract
Investigating inspectability and printability of contamination deposited during SEM analysis
Author(s): Bryan S. Kasprowicz; Mohan Ananth; Chih-Yu Wang
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Cr absorber mask for extreme-ultraviolet lithography
Author(s): Guojing Zhang; Pei-yang Yan; Ted Liang
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Defect printability modeling of smoothed substrate defects for EUV lithography
Author(s): Avijit K. Ray-Chaudhuri; Aaron Fisher; Eric M. Gullikson
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Mask manufacturing contribution on 248-nm and 193-nm lithography performances
Author(s): Alexandra Barberet; Gilles L. Fanget; Jean-Charles Richoilley; Michel Tissier; Yves Quere
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Minimization of mask transmission asymmetry effect for chromeless phase-shift masks
Author(s): David Y. Chan; Justin W. Novak; Michael Fritze
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Dual-mask model-based proximity correction for high-performance 0.10-um CMOS process
Author(s): Shane R. Palmer; Mark E. Mason; John N. Randall; Tom Aton; Keeho Kim; Alexander V. Tritchkov; James Burdorf; Michael L. Rieger; John P. Stirniman
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High-accuracy laser mask repair system LM700A
Author(s): Yoichi Yoshino; Yukio Morishige; Shuichi Watanabe; Yukio Kyusho; Atsushi Ueda; Tutomu Haneda; Makoto Ohmiya
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Automated atomic force metrology applications for alternating aperture phase-shift masks
Author(s): Kirk Miller; Bradley Todd
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Subtractive defect repair via nanomachining
Author(s): Mark R. Laurance
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