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PROCEEDINGS VOLUME 4000

Optical Microlithography XIII
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Volume Details

Volume Number: 4000
Date Published: 5 July 2000
Softcover: 164 papers (1662) pages
ISBN: 9780819436184

Table of Contents
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Review of photoresist-based lens evaluation methods
Author(s): Joseph P. Kirk
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Impact of high-order aberrations on the performance of the aberration monitor
Author(s): Peter Dirksen; Casper A. H. Juffermans; Andre Engelen; Peter De Bisschop; Henning Muellerke
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In-situ measurement of lens aberrations
Author(s): Nigel R. Farrar; Adlai H. Smith; Daniel R. Busath; Dennis Taitano
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Measurement of lens aberration by using in-situ interferometer and classification of lens for correct application
Author(s): Nakgeuon Seong; Gisung Yeo; Hanku Cho; Joo-Tae Moon
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Zernike coefficients: are they really enough?
Author(s): Christopher J. Progler; Alfred K. K. Wong
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Effect of real masks on wafer patterning
Author(s): Chris A. Spence; Ramkumar Subramanian; David Teng; Ernesto Gallardo
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Lithographic comparison of assist feature design strategies
Author(s): Scott M. Mansfield; Lars W. Liebmann; Antoinette F. Molless; Alfred K. K. Wong
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Analytical description of antiscattering and scattering bar assist features
Author(s): John S. Petersen
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OPC methodology and implementation to prototyping of small SRAM cells of 0.18-um node logic gate levels
Author(s): Qizhi He; Mi-Chang Chang; Shane R. Palmer; Kayvan Sadra
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0.13-um optical lithography for random logic devices using 248-nm attenuated phase-shifting masks
Author(s): Yung-Tin Chen; Chia-Hui Lin; Hua Tai Lin; Hung-Chang Hsieh; Shinn Sheng Yu; Anthony Yen
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Alt-PSM for 0.10-um and 0.13-um polypatterning
Author(s): Richard E. Schenker; Heinrich Kirchauer; Alan R. Stivers; Edita Tejnil
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Method of expanding process window for the double exposure technique with alt-PSMs
Author(s): Koji Kikuchi; Hidetoshi Ohnuma; Hiroichi Kawahira
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Process capability analysis of DUV alternating PSM and DUV attenuated PSM lithography for 100-nm gate fabrication
Author(s): Keeho Kim; Mark E. Mason; John N. Randall; Won D. Kim
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Phase aware proximity correction for advanced masks
Author(s): Olivier Toublan; Emile Y. Sahouria; Nicolas B. Cobb; Thuy Do; Tom Donnelly; Yuri Granik; Franklin M. Schellenberg; Patrick Schiavone
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Optical lithography into the millennium: sensitivity to aberrations, vibration, and polarization
Author(s): Donis G. Flagello; Jan Mulkens; Christian Wagner
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Characterization of linewidth variation
Author(s): Alfred K. K. Wong; Antoinette F. Molless; Timothy A. Brunner; Eric Coker; Robert H. Fair; George L. Mack; Scott M. Mansfield
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KrF lithography for 130 nm
Author(s): Jo Finders; Jan B.P. van Schoot; Peter Vanoppen; Mircea V. Dusa; Robert John Socha; Geert Vandenberghe; Kurt G. Ronse
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Impact of optical enhancement techniques on the mask error enhancement function (MEEF)
Author(s): Marina V. Plat; Khanh B. Nguyen; Chris A. Spence; Christopher F. Lyons; Amada Wilkison
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Analytic approach to understanding the impact of mask errors on optical lithography
Author(s): Chris A. Mack
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Modeling oblique incidence effects in photomasks
Author(s): Thomas V. Pistor; Andrew R. Neureuther; Robert John Socha
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IDEAL double exposure method for polylevel structures
Author(s): Carmelo Romeo; Paolo Canestrari; Antonio Fiorino; Masanobu Hasegawa; Kenji Saitoh; Akiyoshi Suzuki
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Spatial frequency filtering in the pellicle plane
Author(s): Bruce W. Smith; Hoyoung Kang
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High-density lithography using attenuated phase-shift mask and negative resist
Author(s): Stanley Pau; Raymond A. Cirelli; Kevin J. Bolan; Allen G. Timko; John Frackoviak; Pat G. Watson; Lee E. Trimble; James W. Blatchford; Omkaram Nalamasu
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Customized illumination aperture filter for low k1 photolithography process
Author(s): Tsai-Sheng Gau; Ru-Gun Liu; Chun-Kuang Chen; Chih-Ming Lai; Fu-Jye Liang; Chin Chiu Hsia
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Patterning 220-nm pitch DRAM patterns by using double mask exposure
Author(s): Dongseok Nam; Nakgeuon Seong; Hanku Cho; Joo-Tae Moon; Sangin Lee
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Understanding lens aberration and influences to lithographic imaging
Author(s): Bruce W. Smith; Ralph E. Schlief
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Pattern asymmetry correction using assist patterns
Author(s): Manhyoung Ryoo; Dongseok Nam; Hanku Cho; Joo-Tae Moon; Sangin Lee
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Interaction of pattern orientation and lens quality on CD and overlay errors
Author(s): Scott J. Bukofsky; Christopher J. Progler
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Practical optical-proximity-correction approach by considering interlayer overlap
Author(s): Byoung-Il Choi; Andrew Khoh
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Process performance comparisons on 300-mm i-line steppers, DUV stepper, and DUV scanners
Author(s): Thorsten Schedel; Alain B. Charles; Dietmar Ganz; Steffen R. Hornig; Guenther Hraschan; Wolfram Koestler; John G. Maltabes; Karl E. Mautz; Thomas Metzdorf; Ralf Otto; Sebastian Schmidt; Ralf Schuster
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0.3-um pitch random interconnect patterning with node connection phase-shifting mask: experiments and simulations
Author(s): Hiroshi Fukuda; Shoji Hotta
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Extension of KrF lithography to sub-50-nm pattern formation
Author(s): Shuji Nakao; Jiroh Itoh; Akihiro Nakae; Itaru Kanai; Takayiki Saitoh; Hirosi Matsubara; Kouichirou Tsujita; Ichiriou Arimoto; Wataru Wakamiya
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Phase-mask effects by dark-field lithography
Author(s): Donald L. White; Raymond A. Cirelli; Steven J. Spector; Myrtle I. Blakey; Obert R. Wood
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Limits of optical lithography
Author(s): Mireille Maenhoudt; Staf Verhaegen; Kurt G. Ronse; Peter Zandbergen; Edward G. Muzio
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Application of chromeless phase-shift masks to sub-100-nm SOI CMOS transistor fabrication
Author(s): Michael Fritze; James M. Burns; Peter W. Wyatt; David K. Astolfi; T. Forte; Donna Yost; Paul Davis; Andrew V. Curtis; Douglas M. Preble; Susan G. Cann; Sandy Denault; Hua-Yu Liu; Joe C. Shaw; Neal T. Sullivan; Robert Brandom; Martin E. Mastovich
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Status of ArF lithography for the 130-nm technology node
Author(s): Kurt G. Ronse; Geert Vandenberghe; Patrick Jaenen; Christie Delvaux; Diziana Vangoidsenhoven; Frieda Van Roey; Ingrid Pollers; Mireille Maenhoudt; Anne-Marie Goethals; Ivan K.A. Pollentier; Bert Vleeming; Koen van Ingen Schenau; Barbra Heskamp; Guy Davies; Jo Finders; Ardavan Niroomand
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Integration considerations for 130-nm device patterning using ArF lithography
Author(s): Uzodinma Okoroanyanwu; Harry J. Levinson; Chih-Yuh Yang; Suzette K. Pangrle; Jeff A. Schefske; Eric Kent
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Comparison study for sub-0.13-um lithography between ArF and KrF lithography
Author(s): Seok-Kyun Kim; YoungSik Kim; Jin-Soo Kim; Cheol-Kyu Bok; Young-Mog Ham; Ki-Ho Baik
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Feasibility study of an embedded transparent phase-shifting mask in ArF lithography
Author(s): Takahiro Matsuo; Tohru Ogawa; Hiroaki Morimoto
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Electrical critical dimension metrology for 100-nm linewidths and below
Author(s): Andrew Grenville; Brian Coombs; John M. Hutchinson; Kelin J. Kuhn; David Miller; Patrick M. Troccolo
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Issues and nonissues on a 193-nm step-and-scan system in production
Author(s): Jeff A. Schefske; Eric Kent; Uzodinma Okoroanyanwu; Harry J. Levinson; Charles R. Masud; Bob Streefkerk; Ralph M. Hanzen; Joerg Brueback
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Experimentation and modeling of organic photocontamination on lithographic optics
Author(s): Roderick R. Kunz; Vladimir Liberman; Deanna K. Downs
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Long-term testing of optical components for 157-nm lithography
Author(s): Vladimir Liberman; Mordechai Rothschild; Jan H. C. Sedlacek; Ray S. Uttaro; Allen Keith Bates; Kevin J. Orvek
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Behavior of fused silica materials for microlithography irradiated at 193 nm with low-fluence ArF radiation for tens of billions of pulses
Author(s): Richard G. Morton; Richard L. Sandstrom; Gerry M. Blumenstock; Zsolt Bor; Chris K. Van Peski
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Prospects for long-pulse operation of ArF lasers for 193-nm microlithography
Author(s): Thomas Hofmann; Bruce Johanson; Palash P. Das
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Overlay performance in advanced processes
Author(s): Frank Bornebroek; Jaap Burghoorn; James S. Greeneich; Henry J. L. Megens; Danu Satriasaputra; Geert Simons; Sunny Stalnaker; Bert Koek
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193-nm step-and-scan lithography equipment
Author(s): Naoto Sano; Kazuhiro Takahashi; Hitoshi Nakano; Akiyoshi Suzuki
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Advances in 193-nm lithography tools
Author(s): Daniel R. Cote; David Ahouse; Daniel N. Galburt; Hilary G. Harrold; Justin Kreuzer; Mike Nelson; Mark L. Oskotsky; Geoffrey O'Connor; Harry Sewell; David M. Williamson; John D. Zimmerman; Richard Zimmerman
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Aberration averaging using point spread function for scanning projection systems
Author(s): Hiroshi Ooki; Tomoya Noda; Koichi Matsumoto
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Realization of very small aberration projection lenses
Author(s): Toshiyuki Yoshihara; Ryo Koizumi; Kazuhiro Takahashi; Shigeyuki Suda; Akiyoshi Suzuki
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Advanced technology for extending optical lithography
Author(s): Christian Wagner; Winfried M. Kaiser; Jan Mulkens; Donis G. Flagello
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Understanding the impact of full-field mask error factor
Author(s): Will Conley; Xuelong Shi; Matt Hankinson; Mircea V. Dusa; Robert John Socha; Cesar Garza
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Impact of MEEF on low k1 lithography and mask inspection
Author(s): Qi-De Qian
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Mask error factor impact on the 130-nm node
Author(s): John N. Randall; Christopher C. Baum; Keeho Kim; Mark E. Mason
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Characterization of spatial CD variability, spatial mask-level correction, and improvement of circuit performance
Author(s): Michael Orshansky; Linda Milor; Michael Brodsky; Ly Nguyen; Gene Hill; Yeng-Kaung Peng; Chenming Hu
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Validation of repair process for DUV attenuated phase-shift mask
Author(s): Seung-Weon Paek; Hee-Bom Kim; Chang-Nam Ahn; Young-Mo Koo; Ki-Ho Baik
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Predictive and corrective model for bulk heating distortion in photomasks
Author(s): Bassam Shamoun; David Trost; Frank Chilese
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Pulsed UV laser Raman and fluorescence spectroscopy of large-area fused silica photomask substrates
Author(s): Christian Muehlig; Sylvia Bark-Zollmann; Dieter Grebner; Wolfgang Triebel
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Scalable pattern generator data path: for the future
Author(s): Charlotta Johansson; Lars Ivansen; Anders Thuren; Per Liden; Mans Bjuggren
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New pattern generation system based on i-line stepper: photomask repeater
Author(s): Suigen Kyoh; Soichi Inoue; Iwao Higashikawa; Ichiro Mori; Katsuya Okumura; Nobuyuki Irie; Koji Muramatsu; Nobutaka Magome
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Modeling the effects of excimer laser bandwidths on lithographic performance
Author(s): Armen Kroyan; Joseph J. Bendik; Olivier Semprez; Nigel R. Farrar; Christopher G. Rowan; Chris A. Mack
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Exposure latitude analysis for dense line and space patterns by using diffused aerial image model
Author(s): Chang-Nam Ahn; Hee-Bom Kim; Ki-Ho Baik
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Direction-oriented partition of unity finite element method for lithography simulation of the image formation problem in photoresist
Author(s): Yao-Chang Chang
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Rigorous diffraction analysis for future mask technology
Author(s): Andreas Erdmann; Christoph M. Friedrich
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Mask topography effects in low k1 lithography
Author(s): Martin McCallum; Ronald L. Gordon
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157-nm lithography simulation using a finite-difference time-domain method with oblique incidence in a multilayered medium
Author(s): Michael S. Yeung; Eytan Barouch; Clifford A. Martin; James A. McClay
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Analysis of OPC features in binary masks at 193 nm
Author(s): Konstantinos Adam; Andrew R. Neureuther
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Application of an effective wavelet matrix transform approach for optical lithography simulation: analysis of topological effects of phase-shifting masks
Author(s): Seung-Gol Lee; Hyun-Jun Kim; Dong-Hoon Lee; Jong-Ung Lee
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Deducing aerial image behavior from AIMS data
Author(s): Ronald L. Gordon; Donis G. Flagello; Martin McCallum
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Factors affecting pitch bias in lithography simulation
Author(s): Stewart A. Robertson; Edward K. Pavelchek; Catherine I. Swible-Keane; John F. Bohland; Michael T. Reilly
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New A/NA scaling equations for resolution and depth-of-focus
Author(s): Burn Jeng Lin
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Theoretical model describing laser microhole drilling processes for organic polymers
Author(s): Frank F. Wu
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Dynamic performance of DUV step-and-scan systems and process latitude
Author(s): Michel Klaassen; Marian Reuhman; Antoine Loock; Mike Rademaker; Jack Gemen
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Linewidth uniformity error analysis for step-and-scan systems
Author(s): John D. Zimmerman; Javed Sumra; Y.K. Arif Leong; Pradeep K. Govil; Greg H. Baxter
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Implementation of an automated feedback focus control methodology for Nikon (NSR) i-line and DUV steppers and scanners
Author(s): Ivan Lalovic; Joseph T. Parry; Brett Gwynn; Christopher D. Silsby
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Impact of illumination pupil-fill spatial variation on simulated imaging performance
Author(s): Terence C. Barrett
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Improving image control by correcting the lens-heating focus drift
Author(s): Bwo-Jung Cheng; Hsiang-Chung Liu; Yuanting Cui; Jiyou Guo
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Characterization of leveling modes on i-line stepper
Author(s): Amir Wachs; David Cohen; Ayelet Margalit-Ilovich
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Self-sustaining dose control system: ways to improve the exposure process
Author(s): Gregory J. Kivenzor
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Simulation-based proximity correction in high-volume DRAM production
Author(s): Werner Fischer; Ines Anke; Giorgio Schweeger; Joerg Thiele
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Advanced mix-and-match using a high-NA i-line scanner
Author(s): Jan Pieter Kuijten; Thomas A. Harris; Ludo van der Heijden; David Witko; John Cossins; James Foster; Douglas R. Ritchie
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Effect of nonlinear errors on 300-mm wafer overlay performance
Author(s): Sebastian Schmidt; Alain B. Charles; Dietmar Ganz; Steffen R. Hornig; Guenther Hraschan; John G. Maltabes; Karl E. Mautz; Thomas Metzdorf; Ralf Otto; Jochen Scheurich; Thorsten Schedel; Ralf Schuster
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Continuous Image Writer: a new approach to fast direct writing
Author(s): Joerg Paufler; Stefan Brunn; Joachim Bolle; Tim Koerner; Aenne Baudach; Reiner Lindner
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Optical holography used in optical microlithography
Author(s): Boru Feng; Jin Zhang; Desheng Hou; Fen Chen
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Across field and across wafer flare: from KrF stepper to ArF scanner
Author(s): Yorick Trouiller; Emmanuelle Luce; Alexandra Barberet; L. Depre; Patrick Schiavone
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Determining and reducing the overhead losses in an ASIC-type environment
Author(s): Dennis B. Ames
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Improvement of CD control and resolution by optimizing inorganic ARC process
Author(s): Atsumi Yamaguchi; Atsushi Ueno; Kouichirou Tsujita
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Novel polymeric antireflective coating (PARC) for better uniformity control of critical dimension
Author(s): Kung Linliu; Mai-Rue Kuo; Yi-Ren Huang
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130-nm KrF lithography for DRAM production with 0.68-NA scanner
Author(s): Eiichi Kawamura; Kouichi Nagai; Hideyuki Kanemitsu; Yasuko Tabata; Soichi Inoue
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Strategy for optimizing random code lithography patterning in 0.18-um generation mask ROM
Author(s): Chih-Ping Chen; Shun-Li Lin; Ta-Hung Yang
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Adjustment of bilayer optical properties and the effect on imaging and etching performance
Author(s): Mark O. Neisser; John J. Biafore; Patrick Foster; Gregory D. Spaziano; Thomas R. Sarubbi; Veerle Van Driessche; Grozdan Grozev; Plamen Tzviatkov
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Image shortening and process development in BEOL lithography
Author(s): Ronald DellaGuardia; Dennis J. Warner; Zheng Chen; Martin Stetter; Richard A. Ferguson; Anne E. McGuire; Karen D. Badger
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Precise control of critical dimension shrinkage and enlargement by in-situ polysilicon etch
Author(s): Kung Linliu; Mai-Rue Kuo
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Structure end foreshortening: lithography-driven design limitations
Author(s): Uwe Paul Schroeder; Dennis J. Warner
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Novel dual-layer polymeric antireflective coating (PARC) for sub-0.18-um KrF lithography
Author(s): Kung Linliu; Yi-Ren Huang; Mai-Rue Kuo
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Lithography process cost considerations for 120-nm groundrules
Author(s): Bernhard Liegl; Christian Summerer
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OPC for logic and embedded applications: the reverse approach
Author(s): Uwe Paul Schroeder; Tobias Mono
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Automatic parallel optical proximity correction and verification system
Author(s): Takahiro Watanabe; Eiji Tsujimoto; Kyoji Nakajo; Keiji Maeda
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Overlay budget considerations for an all-scanner fab
Author(s): Rolf Seltmann; Wolfgang Demmerle; Marc Staples; Anna Maria Minvielle; Bernd Schulz; Sven Muehle
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Accuracy of diffused aerial image model for full-chip-level optical proximity correction
Author(s): Jee-Suk Hong; Hee-Bom Kim; Hyoung-Soon Yune; Chang-Nam Ahn; Young-Mo Koo; Ki-Ho Baik
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Variable-threshold optical proximity correction (OPC) models for high-performance 0.18-um process
Author(s): Hongmei Liao; Shane R. Palmer; Kayvan Sadra
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Optical proximity correction considering mask manufacturability and its application to 0.25-um DRAM for enhanced device performance
Author(s): Chul-Hong Park; Sang-Uhk Rhie; Ji-Hyeon Choi; Ji-Soong Park; Hyeong-Weon Seo; Yoo-Hyon Kim; Young-Kwan Park; Woo-Sung Han; Won-Seong Lee; Jeong-Taek Kong
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Modified proximity function for OPC in laser direct writing
Author(s): Jinglei Du; Fuhua Gao; Yixiao Zhang; Yongkang Guo; Chunlei Du; Zheng Cui
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Optimization for full-chip process of 130-nm technology with 248-nm DUV lithography
Author(s): Young-Mog Ham; Seok-Kyun Kim; Sang-Jin Kim; Cheol Hur; YoungSik Kim; Ki-Ho Baik; Bong-Ho Kim; Dong-Jun Ahn
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OPC beyond 0.18 mm: OPC on PSM gates
Author(s): Franklin M. Schellenberg; Olivier Toublan; Nicolas B. Cobb; Emile Y. Sahouria; Greg P. Hughes; Susan S. MacDonald; Craig A. West
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Double exposure technique to reduce line shortening and improve pattern fidelity
Author(s): Gerhard Kunkel; Scott J. Bukofsky; Shahid A. Butt; Zhijian G. Lu
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Fabrication of small contact using practical pupil filtering
Author(s): Hoyoung Kang; Bruce W. Smith
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Improved process latitude photolithography 0.18-um technology using multiple focal planes
Author(s): Anne-Sophie Callec; Jean-Paul E. Chollet
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Depth-of-focus enhancement of isolated lines by multiple-focus exposure with negative-tone resist process
Author(s): Masashi Fujimoto; Tamio Yamazaki; Takeo Hashimoto
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Fabrication of isolated gates by negative-tone process and resolution enhancement technology
Author(s): Ryoko Morikawa; Noboru Uchida; Minoru Watanabe; Sachiko Yabe; Satoshi Machida; Takashi Taguchi
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0.32-um pitch random line pattern formation by dense dummy pattern and double exposure in KrF wavelength
Author(s): Shuji Nakao; Kouichirou Tsujita; Ichiriou Arimoto; Wataru Wakamiya
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Low k1 process optimization for i-line lithography
Author(s): Jeong Won Kim; Hoon Huh; Sang-Bum Han
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Forbidden pitches for 130-nm lithography and below
Author(s): Robert John Socha; Mircea V. Dusa; Luigi Capodieci; Jo Finders; J. Fung Chen; Donis G. Flagello; Kevin D. Cummings
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Simulation-based method for sidelobe supression
Author(s): Christoph Dolainsky; Paul Karakatsanis; Fritz Gans; Rainer Pforr; Joerg Thiele
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High-transmission attenuated PSM: benefits and limitations through a validation study of 33%, 20%, and 6% transmission masks
Author(s): Nishrin Kachwala; John S. Petersen; Martin McCallum
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Simpler attenuated phase-shifting mask
Author(s): Jin Zhang; Boru Feng; Desheng Hou; Chongxi Zhou; HanMin Yao; Yongkang Guo; Fen Chen; Fang Sun; Ping Su
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Application of attenuated phase-shift masks to sub-0.18-um logic patterns
Author(s): Michael Fritze; Peter W. Wyatt; David K. Astolfi; Paul Davis; Andrew V. Curtis; Douglas M. Preble; Susan G. Cann; Sandy Denault; David Y. Chan; Joe C. Shaw; Neal T. Sullivan; Robert Brandom; Martin E. Mastovich
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Integration of attenuated phase-shift mask to 0.13-um technology contact level masking process
Author(s): Lay Cheng Choo; O'Seo Park; Michael J. Sack; Siu Chung Tam
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Practical software design and experimental research of attenuated phase-shifting masks
Author(s): Chongxi Zhou; Boru Feng; Desheng Hou; Jin Zhang
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Comparison of OPC rules and common process windows for 130-nm features using binary and attenuated phase-shift masks
Author(s): Michael T. Reilly; Colin R. Parker; Karen Kvam; Robert John Socha; Mircea V. Dusa
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Gauging the performance of an in-situ interferometer
Author(s): Mark Terry; Adlai H. Smith; Ken Rebitz
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Sensitivity of coma monitors to resist processes
Author(s): Christian Summerer; Zhijian G. Lu
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Aberrations of steppers using phase-shifting point diffraction interferometry
Author(s): Parthasarathy Venkataraman; Bruce W. Smith
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Degree of patterning performance (DOPP) at low K lithography
Author(s): Donggyu Yim; Seung-Hyuk Lee; Myung-Goon Gil; Young-Mog Ham; Bong-Ho Kim; Ki-Ho Baik
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Lens aberration measurement technique using attentuated phase-shifting mask
Author(s): Akira Imai; Katsuya Hayano; Hiroshi Fukuda; Naoko Asai; Norio Hasegawa
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Impact of lens aberration on pattern symmetry of DRAM cells
Author(s): Katsuyoshi Kobayashi; Teruyoshi Yao; Yuichiro Yanagishita; Isamu Hanyu
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Effect of lens aberrations on pattern placement error
Author(s): Richard D. Holscher; Pary Baluswamy
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Basic imaging characteristics of phase-edge lithography and impact of lens aberration on these characteristics
Author(s): Shuji Nakao; Itaru Kanai; Kouichirou Tsujita; Ichiriou Arimoto; Wataru Wakamiya
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Influence of resist process on the best focus shift due to lens spherical aberration
Author(s): Seiji Matsuura; Takayuki Uchiyama; Hiroyoshi Tanabe
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Optimizing edge topography of alternating phase-shift masks using rigorous mask modeling
Author(s): Christoph M. Friedrich; Leonhard Mader; Andreas Erdmann; Steffen List; Ronald L. Gordon; Christian K. Kalus; Uwe A. Griesinger; Rainer Pforr; Josef Mathuni; Guenther G. Ruhl; Wilhelm Maurer
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Understanding the parameters for strong phase-shift mask lithography
Author(s): Alexander V. Tritchkov; John P. Stirniman; Jeffrey P. Mayhew; Michael L. Rieger
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Manufacturability of 248-nm phase-shift lithography for 100-nm transistors
Author(s): Mark E. Mason; John N. Randall; Keeho Kim
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Precise CD control of 140-nm gate patterns using phase-edge PSM
Author(s): Shoji Hotta; Osamu Inoue; Hiroshi Fukuda; Norio Hasegawa
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Comparison between 2-phase-shifting mask and 3-phase-shifting mask on application of printing low-duty-ratio contact array patterning
Author(s): Kuei-Chun Hung; Benjamin Szu-Min Lin; Hsien-an Chang; Alex Tseng; Lien-Sheng Chung; WeiJyh Liu; Der-Yuan Wu; Peter Huang
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Al2O3 coatings for 193 nm: a nonlinearly absorbing material
Author(s): Oliver Apel; Klaus R. Mann
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High-repetition-rate ultranarrow-bandwidth 193-nm excimer lasers for DUV lithography
Author(s): Uwe Stamm; Rainer Paetzel; Igor Bragin; Juergen Kleinschmidt; Peter Lokai; Rustem Osmanov; Thomas Schroeder; Martin Sprenger; Wolfgang Zschocke
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High-repetition-rate ArF excimer laser for 193-nm lithography
Author(s): Kouji Kakizaki; Takashi Saito; Ken-ichi Mitsuhashi; Motohiro Arai; Akifumi Tada; Shinji Kasahara; Tatsushi Igarashi; Kazuaki Hotta
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Laser spectrum line shape metrology at 193 nm
Author(s): Alexander I. Ershov; Gunasiri G. Padmabandu; Jeremy D. Tyler; Palash P. Das
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Performance of very high repetition rate ArF lasers
Author(s): Jean-Marc Hueber; Herve Besaucele; Palash P. Das; Rick Eis; Alexander I. Ershov; Vladimir B. Fleurov; Dmitri Gaidarenko; Thomas Hofmann; Paul C. Melcher; William N. Partlo; Bernard K. Nikolaus; Scot Smith; Kyle Webb
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Output stabilization technology with chemical impurity control on ArF excimer laser
Author(s): Akira Sumitani; Satoshi Andou; Takehito Watanabe; Masayuki Konishi; Suguru Egawa; Ikuo Uchino; Takeshi Ohta; Katsutomo Terashima; Natsushi Suzuki; Tatsuo Enami; Hakaru Mizoguchi
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Highly durable low CoO mass production version of 2-kHz ArF excimer laser for DUV lithography
Author(s): Tatsuo Enami; Osamu Wakabayashi; Ken Ishii; Katsutomo Terashima; Yasuo Itakura; Takayuki Watanabe; Takeshi Ohta; Ayako Ohbu; Hirokazu Kubo; Hirokazu Tanaka; Toru Suzuki; Akira Sumitani; Hakaru Mizoguchi
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High-resolution multigrating spectrometer for high-quality deep-UV light source production
Author(s): Toru Suzuki; Takanori Nakaike; Osamu Wakabayashi; Hakaru Mizoguchi
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Extending the performance of KrF laser for microlithography by using novel F2 control technology
Author(s): Paolo Zambon; Mengxiong Gong; Jason Carlesi; Gunasiri G. Padmabandu; Mike Binder; Ken Swanson; Palash P. Das
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Ultranarrow-bandwidth excimer lasers for 248-nm DUV lithography
Author(s): Rainer Paetzel; Hans Stephen Albrecht; Vadim Berger; Igor Bragin; Matthias Kramer; Juergen Kleinschmidt; Marcus Serwazi
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Comparison of ArF and KrF laser performance at 2 kHz for microlithography
Author(s): Herve Besaucele; Palash P. Das; Thomas P. Duffey; Todd J. Embree; Alexander I. Ershov; Vladimir B. Fleurov; Steven L. Grove; Paul C. Melcher; Richard M. Ness; Gunasiri G. Padmabandu
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High-NA high-throughput scanner compatible 2-kHz KrF excimer laser for DUV lithography
Author(s): Hiroaki Nakarai; Naoto Hisanaga; Natsushi Suzuki; Takeshi Matsunaga; Takeshi Asayama; Jun Akita; Toru Igarashi; Tatsuya Ariga; Satoru Bushida; Tatsuo Enami; Ryoichi Nodomi; Yuichi Takabayashi; Syouich Sakanishi; Takashi Suzuki; Hitoshi Tomaru; Kiyoharu Nakao
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Fluoropolymers for 157-nm lithography: optical properties from VUV absorbance and ellipsometry measurements
Author(s): Roger H. French; Robert C. Wheland; David J. Jones; James N. Hilfiker; Ron A. Synowicki; Fredrick C. Zumsteg; Jerald Feldman; Andrew E. Feiring
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Absolute index of refraction and its temperature dependence of calcium fluoride, barium fluoride, and strontium fluoride near 157 nm
Author(s): John H. Burnett; Rajeev Gupta; Ulf Griesmann
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New silica glass (AQF) for 157-nm lithography
Author(s): Yoshiaki Ikuta; Shinya Kikugawa; T. Kawahara; H. Mishiro; Noriaki Shimodaira; Shuhei Yoshizawa
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Advanced F2 lasers for microlithography
Author(s): Klaus Vogler; Uwe Stamm; Igor Bragin; Frank Voss; Sergei V. Govorkov; Gongxue Hua; Juergen Kleinschmidt; Rainer Paetzel
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Feasibility of highly line-narrowed F2 laser for 157-nm microlithography
Author(s): Alexander I. Ershov; Thomas P. Duffey; Eckehard D. Onkels; William N. Partlo; Richard L. Sandstrom
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Laser cleaning of optical elements in 157-nm lithography
Author(s): Theodore M. Bloomstein; Mordechai Rothschild; Vladimir Liberman; D. E. Hardy; N. N. Efremow; Stephen T. Palmacci
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Properties and potential of VUV lithographic thin film materials
Author(s): Michael J. Cangemi; Matthew Lassiter; Anatoly Bourov; Bruce W. Smith
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VUV transmittance of fused silica glass influenced by thermal disorder
Author(s): Noriaki Shimodaira; Kazuya Saito; Akira J. Ikushima; Toru Kamihori; Shuhei Yoshizawa
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High-repetition-rate fluorine laser for microlithography
Author(s): Junichi Fujimoto; Shinji Nagai; Koji Shio; Yasuaki Iwata; Kiwamu Takehisa; Toshihiro Nishisaka; Osamu Wakabayashi; Hakaru Mizoguchi
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Development of 157-nm small-field and mid-field microsteppers
Author(s): Ron E. Miller; Paul M. Bischoff; Roger C. Sumner; Stephen W. Bowler; Warren W. Flack; Galen Fong
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Effects of off-axis illumination and scattering-bar optical proximity correction on the impact of lens aberration on 130-nm polygate mask: a simulation study
Author(s): Kent H. Nakagawa; Uwe Hollerbach; J. Fung Chen
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Half-lambda imaging with KrF: performance challenges and trade-offs as expected through simulation
Author(s): Steve D. Slonaker
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Integrated phase-shifting software solution for IC design to manufacturing
Author(s): Hua-Yu Liu; Clive Wu; Xiaoyang Li
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Prospects for very high repetition rate lasers for microlithography
Author(s): Igor Bragin; Vadim Berger; Rainer Paetzel; Uwe Stamm; Andreas Targsdorf; Juergen Kleinschmidt; Dirk Basting
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Dynamic change of transmission of CaF2 single crystals by irradiating with ArF excimer laser light
Author(s): Jochen Alkemper; Joerg Kandler; Lorenz Strenge; Ewald Moersen; Christian Muehlig; Wolfgang Triebel
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Progress in 157-nm lithography development at Intel: resists and reticles
Author(s): Veena Rao; Eric M. Panning; Ling Liao; John M. Hutchinson; Andrew Grenville; Susan M. Holl; Don Bruner; Raghu Balasubramanian; Ronald Kuse; Giang T. Dao; Jun-Fei Zheng; Kevin J. Orvek; Joseph C. Langston; Fu-Chang Lo
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SVG 157-nm lithography approach
Author(s): James A. McClay; Michael A. DeMarco; Thomas J. Fahey; Matthew E. Hansen; Bruce A. Tirri
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Interference lithography at 157 nm
Author(s): Michael Switkes; Theodore M. Bloomstein; Mordechai Rothschild
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Influence of film stress on advanced optical reticle distortions
Author(s): Lowell K. Siewert; Andrew R. Mikkelson; Roxann L. Engelstad; Edward G. Lovell; Mark E. Mason; R. Scott Mackay
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